ECE1001 Fundamentals of Electrical Circuits L,T,P,J,C Pre-Req :NIL 2, 0, 2,0,3 Lecture Mod ules

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1 ECE1001 Fundamentals of Electrical Circuits L,T,P,J,C Pre-Req :NIL 2, 0, 2,0,3 Topics L Hrs SLO 1 DC Circuit analysis: Terminologies, Ohms law, Kirchhoff s laws, Series- parallel circuits, voltage & current division, star -delta conversion. Node voltage analysis, Mesh current analysis, special cases. 2 Network Theorems: Source transformation, Superposition theorem, Thevenin s& Norton s theorems, Reciprocity and Maximum power transfer theorem 3 DC Transients: Time response in inductance (L)and capacitance (C). Steady state response of circuits with RLC components. Response(forced & natural) of first order circuits (RL & RC): Series, parallel, source free, complex circuits with more than one resistances, power sources and switches. Response of second order circuit (RLC) : Series, parallel and complex 4 AC Circuit analysis : Wave form analysis: Average value, root mean square value Phasor representation of alternating quantities, Concept of j -operator, Steady state AC circuit analysis for R, L, C, RL, RC & RLC series and parallel 5 Complex power and resonance: Concept of complex power and its calculation, Series and parallel resonance condition. 6 Magnetic circuits : Introduction to magnetic field, analogy between electrical & magnetic Analysis of magnetic circuits : Series, parallel Magnetic materials, B-H curve. Electromagnetic induction S elf & mutual inductance, Transformers Total Hours # e: Flipp ed Class Ro o m, [ to be vid eo taped], Use o f ph ysical and co mputer models to lectu re, Visit to Industry. Min. o f 2 lectures b y industry exp erts LAB # Simulation Tool used in Exp eriments : Multisim # Hard ware experiments : using discrete co mpon ents, meters, bread board, etc List of possible ex peri ments : 1. Take assorted values o f resistor connect th em in s eries and/or parallel to get largest and smallest resultant resistan ce valu e. 2. Stud y th e choice o f resistance as a po wer controller when po wer supply and load are not matchin g. 3. Use 10 µf capacito rs rated at 300 V, to design a capacito r bank o f 40 µf rated a t 600 V, how man y 10 µf capacitors are needed and ho w would you connect th em? 4. Design o f a photo flash unit, auto mobile ignitio n control unit. (use RC and RL circuit) 5. A lin e connectin g a transducer and a controller is modeled as RLC series circuit. Decide a resistance value, b y which we get different time responses (rise time, settlin g time). 6. Connect a resistor, inductor and cap acitor in series and parallel. In each case observe the frequen cy response. Give your In feren ce. # Assessment on a weekly continuou s basis , 2,9 6 1,2,9 30 1, 5, 17, 18, 1. Charl es K. Alexander, Matthew N. O. Sadiku, Fundamentals of El ectric Circuits, Th ird Edition, Tata McGraw Hill Education Private Limited, 2008.

2 1. W.H.Hayt, J.E.Kemmerl y&s.m.durbin, Engineering Circui t Analysis, TMH, New Del hi, Allan R. Hambley, Electrical Engineering Principl es & applications, Pearson Education, 4th Edition, R.A. De Carlo and Pen-Min Lin Linear Circuit Analysis, 2/e, Oxford University Press, New Delhi. 2001

3 XXXXX Network Theory L,T,P,J,C Pre-Req Fundamentals of Electrical Circuits 3, 0, 0,0,3 Topics L Hrs SLO 1 Sinusoidal Steady-State Analysis: Review of steady state sinusoidal analysis using phasors. Node voltage and Mesh c urrent analysis, special cases. 2 Network graphs: definition of terms. Matrices associated with grap hs; incidence, reduced incidence, fundamental cut -set and fundamental tie -set. 3 Circuit Analysis in the s -domain : Review of Laplace transform (LT), Notations of impedance and admittance, poles, zeros and transfer functions. Analysis of circuits subjected to periodic excitations using Laplace transforms. Complex-frequency plane. LT for determining free and forced response of 4 Two-Port Networks : Significance and applications of one port and two networks. Two port network analysis (both open and terminated) using: Admittance (Y) parameters, Impedance (Z) parameters, Hybrid (h) parameters and Transmission (ABCD) parameters. Conversion of parameters. Interconnection of two port networks: Parallel, series and cascade connections of two-ports. 5 Principles of Basic Passive Filtering : Filters: Concept of filtering. Filter types: Low pass, High pass, Band pass and Band stop and their characteristics. Classical design of T and π passive filters. Scaling: Magnitude, Frequency. 6 Synthesis of Circuits: Positive real function physical realizability conditions, Foster and Cauer forms, Filter synthesis Total Hours # e: Flipp ed Class Ro o m, [ to be vid eo taped], Use o f ph ysical and co mputer models to lectu re, Visit to Industry and stud y the thermal equip ments, Min o f 2 lectures b y industry experts , ,2 08 1,2 09 1,2,9 08 1,2,5 06 1,2,5 1. Charl es K. Alexander, Matthew N. O. Sadiku, Fundamenta ls of El ectric Circuits, Third Edition, Tata McGraw Hill Education Private Limited, M.E.Van Valkenburg, Network Analysis, 3 rd Edition, PHI Learning, S.P.Ghosh, A.K.Chakraborty, Network Analysis and Synthesis, TataMcGraw Hill, M.Nahvi, Joseph Edminister, K. Rao, Electric Circuits, Schaums Outline series, McGrawHill, W.H.Hayt, J.E.Kemmerl y & S.M.Durbin, Engineering Circuit Analysis, 7 th Edition, TMH, New Delhi, R.A. De Carlo and Pen-Min Lin Linear Circuit Analysis, 2 /e, Oxford University Press, New Delhi. 2001

4 XXXXX SEMICONDUCTOR DEVICE S AND CIRCUITS L,T,P,J,C Pre-Req: Fundamentals of Electrical Circuits 3, 0, 2,0,4 L Topics 1 Semiconductor Fundamentals : Formation of energy bands, Fermi level, energy-band models, direct and indirect band gap, electrons and holes, doping, intrinsic and extrinsic semiconductors, elemental and compound semiconductor, generatio n, recombination and injection of carriers, Drift and Diffusion of carriers, basic governing equations in semiconductors, Transport Equations 2 PN Junction diodes : PN Junctions, Formation of Junction, Physical operation of diode, Contact potenti al and Space Charge pheno mena, I -V Characteristics, Zener diode, Physical operation of special diode s (Tunnel diode, LED, OLED, Varactor diode and Photo Diode) 3 Diode Circuits and Applications: Dc Analysis and models of PN jun ction diode, AC equivalent circuit, Rectifiers circuits, Clipper and Clamper circuits, Photodiode and LED 4 Transistors- Device Perspective: Bipolar Junction Transistor : Device structure and physical operation, current voltage characteristics. Field Effect Transistor(FET) : MOS Capacitor: Device Structure and mode of operation, C -V Characteristics, Threshold Voltage Hrs SLO 8 1, 2 6 1,2 6 3,4,5 8 3,4,5,6,7 5 Transistors- Circuit Perspective BJT: DC Analysis of BJ T Circuits, CB, CE and CC Configuration, Biasing BJT Circuits, Switch. MOSFET: DC Analysis of MOSFET Circuits, biasing 6 Applications of MOSFETs CMOS device structure, characteristics, gates and inverters. MOSFET CS, CG and Source Follower Circuits 7 Advanced and Future FETs Multi-gate Transistors, Tunnel FET, Single Electron transistor, CNTFET. Total Hours # e: Flipp ed Class Ro o m, [ to be vid eo taped], Use o f ph ysical and co mputer model s to lectu re, Visit to Industry, Min o f 2 lectures b y industry exp erts LAB Phase- 1 (4 Lab Classes) Diode: 1. Design of dc power supplies and wave shaping circuits using pn junction diodes and conduct experiments to study the characteristics of the components used. Phase- 2 (4 Lab Classes) BJT: 1. Design of amplifier circuits with given specifications and conduct experiments to study the characteristics of the components used. Phase- 3 (4 Lab Classes) MOSFET: 1. Design of basic gates and amplifiers To Conduct experiments and study the characteristics of the components used ,4,5,6,7 6 3,4,5,6,7 3 3,4,5,6,7 30 1, 5, 12, 14, 17, 18,

5 . 1. Adel S. Sedra, Kenneth C. Smith & Arun N. Chandorkar, Microelectronic Circuits,: Theory and Application s, 5/e, OUP, Chennai, KanaanKano, Semiconductor Devices, PHI, D. A. Neamen, Microelectronics Circuit Analysis and Design, 4/e, McGraw-Hill, Robert F Pierret, Semiconductor Device Fundamentals, Pearson Education, B G. Streetman and S. Banerjee, SolidState Electronic Devices,Pearson Education, Delhi, D. A. Bell, Electronic Devices and Circuits, 6/e, Prentice Hall of India, New Delhi, 2008.

B.Sc. Syllabus for Electronics under CBCS. Semester-I

B.Sc. Syllabus for Electronics under CBCS. Semester-I Semester-I Title: Electronic Circuit Analysis Course Code: UELTC101 Credits: 4 Total Marks: 100 Internal Examination: 20 marks End Semester Examination: 80 marks Duration: 3 hours Validity of Syllabus: