Lahore SSE L-301 TBA. Office TBA TBA. Hours. Credit. Duration. Core Elective COURSE DESCRIPTION. laying.

Transcription

1 EE 340 Devices and Electronics Fall Instructor Room No. Office Hours Telephone Secretary/TA TA Office Hours Course URL (if any) Dr. Tehseen Zahra Raza SSE L TBA TBA Course Basics Credit Hours 4 Lecture(s) Nbr of Lec(s) Per Week 2 Duration 75 minutes each Recitation/Lab (per week) Nbr of Lec(s) Per Week 1 Duration 3 hours Tutorial (per week) Nbr of Lec(s) Per Week Duration Course Distribution Core Core course for Electrical Engineering Majors Elective Open for Student Category Close for Student Category COURSE DESCRIPTION This course lays the foundations for the design of electronic systemss for various applications. The fundamentals of device physics are discussed laying the foundation to understand the operation of diodes, bipolar junction transistors and field effect transistors. It will cover topics on modeling microelectronic devices, circuit analysis and design. The course will develop and use large signal behavior of BJT and FET is studied along with techniques to analyze and design BJT and FET circuits including an overview of multistage amplifiers. Finally the small signal appropriate

2 mathematical models and frequency response. COURSE PREREQUISITE(S) EE240: Circuits 1 EE242: Circuits 2 COURSE OBJECTIVES To teach the fundamentals of semiconductor physics and devices; PN junction diode, MOSFET and BJT. To develop skills needed for analysis and design of electronic systems using these components. Learning Outcomes Grading Breakup and Policy

3 Quiz(s): Quiz percentage out of 2 will be added as EXTRA CREDIT in final course percentage Assignment(s): 15% Labs and Final Project: 15% + 15% Midterm Examination: 25% Final Examination: 30% Labs and Final Project: 15% + 15% Assignment(s): 6-7 Home Work: Quiz(s): 7-8 Class Participation: Class participation is encouraged Attendance: Attendance is not compulsory but participation and punctuality is expected Midterm Examination: One Project: One end term Project Final Examination: Comprehensive Examination Detail Yes/ /No: Yes Midterm Exam Combine Separate: Combine Duration: 60 mins Preferred Date: Thur 10/10

4 Exam Specifications: Yes/No: Yes Final Exam Combine Separate: Cumulative Duration: Exam Specifications: COURSE OVERVIEW Week/ Lecture/ Module Topics Objectives/ Application Wed 08/21 Thu 08/22 Lecture 1 Fri 08/23 Mon 08/26 Tue 08/27 Lecture 2 Wed 08/28 Thu 08/29 Lecture 3 Fri 08/30 Semiconducto rs General Introduction Carrier modeling energy bands and band gaps Density of States, Fermi Energy NO LAB Session 1 LAB 1 Diode Characteristics

5 Mon 09/02 Tue 09/03 Lecture 4 Wed 09/04 Th 09/05 Lecture 5 Fri 09/06 Mon 09/09 Tue 09/10 Lecture 6 Wed 09/11 Thu 09/12 Lecture 7 Fri 09/13 Mon 09/16 Tue 09/17 Lecture 8 Wed 09/18 Thu 09/19 Lecture 9 Fri 09/20 Mon 09/23 Tue 09/24 Lecture 10 Wed 09/25 Thur 09/26 Lecture 11 Fri 09/27 Mon 09/30 Tues 10/01 Lecture 12 Wed 10/02 Thur 10/03 Lecture 13 Doping/carrier r concentration Transport mechanism Drift and Diffusion Currents Recombination n/generation PN Junction structure and electrostatics PN Junction I-V characteristics I-V characteristics, Small signal admittance Junction capacitance, diffusion admittance Diode circuits models and applications Diode circuits analysis and applications Session 2 LAB 1 Diode Characteristics Session 3 LAB 2 Diode Applications Session 4 LAB 2 Diode Applications Session 5 Lab 3 Characteristics of MOSFET Session 6 Lab 4 MOSFET as an amplifier

6 Fri 10/04 Mon 10/07 Tues 10/08 Lecture 14 Wed 10/09 Thur 10/10 Fri 10/11 EID HOLIDAYS Mon 10/21 Tues 10/22 Lecture 15 Wed 10/23 Thur 10/24 Lecture 16 Fri 10/25 Mon 10/28 Tues 10/29 Lecture 17 Wed 10/30 Thur 10/31 Lecture 18 Fri 11/01 Mon 11/04 Tues 11/05 Lecture 19 Wed 11/06 Thur 11/07 Lecture 20 Fri 11/08 Mon 11/11 MOSFET- Introduction, Structure and device operation, models Midterm MOSFET Biasing and DC analysis MOSFET Small signal models and analysis MOSFET Amplifier configurations MOSFET Amplifier characteristics Transistor Switch and Inverter Current Mirrorr configurations Session 7 Lab 4 MOSFET as an amplifier Session 8 Lab 5 Common Gate and Common Drain Amplifiers Session 9 Lab 6 Frequency Response of Common Source Amplifier Session 10 Lab 7 CMOS Digital Logic Inverter

7 Tues 11/12 Lecture 21 Wed 11/13 Thur 11/14 Lecture 22 Fri 11/15 Mon 11/18 Tues 11/19 Lecture 23 Wed 11/20 Thur 11/21 Lecture 24 Fri 11/22 Mon 11/25 Tues 11/26 Lecture 25 Wed 11/27 Thur 11/28 Lecture 26 Fri 11/29 Mon 12/02 Tues 12/03 Lecture 27 Wed 12/04 Thur 12/05 Lecture 28 Fri 12/06 Multistage amplifiers Frequency response of amplifiers low freq. Frequency response of amplifiers High Freq BJT Structure and device operation, models BJT Biasing and DC analysis BJT Small signal models and analysis BJT Amplifier configurations and analysis Current Mirrorr and Frequency response of BJTs Session 11 Lab 8 Switching Circuits and Timers Session 12 : FINAL PROJECT Session 13 : FINAL PROJECT Sesison 14 : FINAL PROJECT

8 Textbook(s)/Supplementary Readings TEXTBOOKS Semiconductor Device Fundamentals by Robert Pierret, Addison Wesley, 1996 Microelectronic Circuits by Sedra and Smith, 6 th Edition, Oxford University Press, 2010 SUPPLEMENTARY READING Fundamentals of Microelectron nics by Behzad Razavi, Wiley, Introduction to Solid State Physics by Charles Kittel, 7 th Edition, Wiley. Description of Laboratory Exercises Following are the labs that willl be conducted during this course. Handouts of actual lab to be conducted will be provided in the preceding week. Session 1: Diode characteristics of pn junction diode, LED and zener diode To understand the characteristics of various semiconductor diodes andd the parameters used to model their behavior. In this lab characteristics of a pn junction diode, LED and zener diode are studied. Session 2: Junction capacitance and opto-coupling of LED This lab is the continuation of Session 1. The junction capacitance andd opto-coupling of LED is studied. Session 3:Diode applications I Session 4: Diode applications II This lab comprises of two sessions to study various applications of diodes. The following circuits will be studied in Session 3 and Session 4. Use of diode as a half-wave and full-wave rectifier ripple reduction with capacitor filter regulation using a zener diode, clamping circuit voltage multipliers Session 5: Lab No. 3: MOSFET Characteristics Characteristics of a MOSFET device and understanding the parameters used to model its behavior.

9 Session 6: Transistor as an amplifier I Session 7: Transistor as an amplifier II Biasing schemes and amplification characteristics of a single stage common source MOSFET amplifier will be considered in Session 6 and Session 7 Session 8: Common Drain and Common Gate Amplifiers Biasing and amplification characteristics of a common gate and common drain MOSFET amplifiers Session 9: Frequency Response of MOSFET amplifier High frequency and low frequency responsee of a common source MOSFET amplifier Session 10: CMOS Digital Logic Inverter Voltage transfer characteristics s and dynamic operation of CMOS digital logic inverter Session 11: Switching Circuits and Timers Design and working of discretee component multi-vibrato rs with BJTs and applications of 555 timer Sessions 12 14: Final Project: Group project (4 members maximum) Proposal to be submitted in week 10.