PMD110. Description and Application Manual for PMD110 High Power MOSFET/IGBT driver

Transcription

1 Description and Application Manual for High Power MOSFET/IGBT driver high power field effect transistor (FET) drive module is specially designed for high power field effect transistor. It adapts transformer modulation isolation technology with advantages of with isolation power supply itself and high power output and high working frequency (max driving frequency can reach 1.2MHz). Itis suitable for driving high power field effect transistor (FET) module below 400A /1200V. It is also suitable for high power IGBTs. The WEPOWER IGBT driver is a winning project of the competition organized by China National Invention Association in The IGBT driver by distinguishing it as the Bronze Medal in the National Exhibition of Inventions in Applications RF Radio Frequency Radiology and Laser Technology High Frequency Induction Heating 26 Feb., 2013 Version rights reserved Page 1/6

2 1. Main Features & Technical Specifications 1.1 Main Feature (1) Adopting transformer modulation isolation technology (2) Interference pulse suppression technology (3) High electrical isolation (4) Switching frequency: 0~1.2MHz (5) Duty ratio: 0~100% (6) Disturbance rejection property: dv/dt >100,000V/us (7) Integrated internal DC/DC power supply 1.2 Technical Specifications Absolute maximum Ratings Symbol Definition Value Unit VCC Power supply voltage 16 V ViH Input signal voltage (high) VS+0.3 V ViL Input signal voltage (low) GND-0.3 V IoutPEAK Output peak current 10 A fmax Max switching frequency 1.2 MHz VDS Max MOS Blocking voltage VDS 1200 V dv/dt Rate of rise and fall of voltage secondary to primary side 60 kv/us VisoIIO Input Output Isolation voltage(ac,rms,2s) 3000 V RGmin Minimum rating for RG 2 Ω Top Operating I -40 ~+85 temperature J -40 ~+105 Tstg Storage I -55 ~+125 temperature J -55 ~+125 Electrical characteristics Symbol Definition value unit Min. Typ. Max VS Supply voltage primary side V ISO Supply current primary side (no load ) 15 ma Supply current primary side (max) 100 ma Internal DC/DC input power 1 W 26 Feb., 2013 Version rights reserved Page 2/6

3 Vi Input signal voltage on/off 0 15 V ViT+ Input threshold voltage (High) V ViT- Input threshold voltage (Low) V VG(on) Turn on gate voltage output +15 V VG(off) Turn off gate voltage output 0 V td(on) Turn-on propagation time 0.32 us td(off) Turn-off propagation time 0.38 us CPS Coupling capacitance primary secondary 10 pf W weight 8 g MTBF Mean time between failure (Ta=40,max load) h 2. Mechanical Dimensions outer dimensions and connector diagram (pin distance: 2.54mm thickness: 9.5mm) 26 Feb., 2013 Version rights reserved Page 3/6

4 Pin Designation Table Pin Signal Function 1 15V +15V for electronic input side 2 GND GND for electronic input side 3 IN PWM Signal input (TTL or COMS) 14 VCCH High voltage power supply +15V 15 COMH High voltage common ground 16 OUTL High voltage MOS gate drive output (low) 17 OUTH High voltage MOS gate drive output (high) 3.Application examples Reference connection schematic of is shown in the following figure. It shows that WEPOWER series IGBT/MOS drive module need less peripheral device, driving circuits is simple and high integration. It is very easy to operate. Connection Schematic 26 Feb., 2013 Version rights reserved Page 4/6

5 4. Overview of WEPOWER series High Power IGBT/MOS intelligent module driver (1) Transformer modulation Isolation technology (the driver using transformer modulation isolation technology with better performance of insulation and fast respond speed) (2) Pulse suppression technology (the driver using the special technology of pulse suppression interference, all interference pulse which width is less than 400ns will be ignored) (3) Integrated DC/DC (the isolation DC/DC converter is integrated inside the module, it will working only provide 15V power supply from outside) 5. The Pin Designation 5.1 Low Power Side: Pin 15V:primary internal DC/DC and Logic circuit +15V input power supply Pin GND:primary internal DC/DC and Logic ground power supply Pin IN:primary signal input, compatible with TTL & COMS electrical level 5.2 High Power Side Pin VCCH: power supply output terminal of high power side Filter capacitor can be added between VCC and VE COMH: Pin VE is power supply terminal of high voltage, it can be connected to S of the MOSFET. PIN OUTL is high voltage MOS gate drive output (low) it is connected to FET gate to shut-off resistor. PIN OUTH is high voltage MOS gate drive output (high) it is connected to FET gate to turn-on resistor. 5.3 Layout and wiring Drivers should be placed as close as possible to the power semiconductors and the lead wire length of gate are less than 10 cm. It is better to use twisted wire to connect. 26 Feb., 2013 Version rights reserved Page 5/6

6 6. Calculation of driving power Gate input capacitance (Cin) can be found thru data sheet. The total power need to drive MOSFET can be calculated by the following simple formula: P=f*Cin* V 2 OR P=f*Q* V Gate charge Q= idt=c* V (Note: P represents the real driving power not including the losses in drive channel and drive power supply.) WEPOWER TECHNOLOGY CO., LTD A333,3/F,NO.168 BAOYUAN ROAD, XIXIANG TOWN, BAO AN DISTRICT, SHENZHEN, CHINA TEL: FAX: info@wepowertech.com 26 Feb., 2013 Version rights reserved Page 6/6