LQA16T300 Qspeed Family

Transcription

1 Qspeed Family 3 V, 16 A Q-Series Diode Product Summary I F(AVG) 16 A V RRM 3 V Q RR (Typ at 12 C) 44 nc I RRM (Typ at 12 C) 2.6 A Softness t b /t a (Typ at 12 C).7 Pin Assignment A C TO-2AC RoHS Compliant Package uses Lead-free plating and Green mold compound. Halogen free per IEC General Description This device has the lowest Q RR of any 3 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications AC/DC and DC/DC output rectification Output and freewheeling diodes DC-AC Inverters Features Low Q RR, Low I RRM, Low t RR High di F /dt capable (1A/µs) Soft recovery Benefits Increases efficiency Eliminates need for snubber circuits Reduces EMI filter component size & count Enables extremely fast switching Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V RRM Peak repetitive reverse voltage 3 V I F(AVG) Average forward current T J = 1 C, T C = 14 C 16 A I FSM Non-repetitive peak surge current 6 Hz, ½ cycle 1 A I FSM Non-repetitive peak surge current ½ cycle of t=28 µs Sinusoid, T C =2 C 3 A T J(MAX) Maximum junction temperature 1 C T STG Storage temperature to 1 C Lead soldering temperature Leads at 1.6 mm from case, 1 sec 3 C P D Power dissipation T C = 2 C 6.8 W Thermal Resistance Symbol Resistance from: Conditions Rating Units R θja Junction to ambient TO-2 62 C/W R θjc Junction to case TO C/W January 11

2 Electrical Specifications at T J = 2 C (unless otherwise specified) Symbol Parameter Conditions Min Typ Max Units DC Characteristics I R Reverse current V R = 3V, T J = 2 C µa V R = 3V, T J = 12 C ma V F Forward voltage I F = 16A, T J = 2 C V I F = 16A, T J = 1 C V C J Junction capacitance V R = 1V, 1 MHz - - pf Dynamic Characteristics t RR Reverse recovery time di/dt =A/µs T J =2 C ns V R =V,I F =16A T J =12 C ns Q RR Reverse recovery charge di/dt =A/µs T J =2 C nc V R =V,I F =16A T J =12 C nc I RRM Maximum reverse di/dt =A/µs T J =2 C A recovery current V R =V,I F =16A T J =12 C A S t di/dt =A/µs T J =2 C Softness factor = b V t R =V,I F =16A T J =12 C a Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction. Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups. (For additional details, see Application Note AN-3.) VR L1 D1 DUT I F dif/dt t a t RR t b Pulse generator 1V + Rg Q1.1xI RRM I RRM Figure 1. Reverse Recovery Definitions Figure 2. Reverse Recovery Test Circuit Rev 1.7 1/11 2

3 Electrical Specifications at T J = 2 C (unless otherwise specified) Tj=12C Tj=12C IF (A) Tj=2C IF (A) Tj=2C V F (V) V F (V) Figure 3. Typical I F vs V F Figure 4. Typical I F vs V F Cj (pf) V R (V) IF(AV) (A) Case Temperature, T C ( o C) Figure. Typical Typical C j vs V R Figure 6. DC Current Derating Curve 8 di/dt=a/us di/dt=a/us QRR (nc) di/dt=a/us trr (ns) di/dt=a/us I F (A) I F (A) Figure 7. Typical Q RR vs I F at T J = 12 C Figure 8. Typical t RR vs I F at T J = 12 C 3 Rev 1.7 1/11

4 P (W) Case Temperature, T C ( o C) IF(PEAK) (A) duty cycle=1% duty cycle=3% duty cycle=% DC T C ( C) Figure 9. Power Derating Curve Figure 1. I F (PEAK) vs T C, f=7 khz LQA16T3 1 D=. D =.3.1 D=.1 Zth(j-c)/Rth(j-c) D=. D=.2 D=.1.1 D=. D=.2 Single Pulse.1 1.E-6 1.E- 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ t1(sec) Figure 1. Normalized Maximum Transient Thermal Impedance Rev 1.7 1/11 4

5 Dimensional Outline Drawings Millimeters Dim MIN MAX A A A C D E E F F H H H H H L L1-6.3 Mechanical Mounting Maximum Torque / Pressure specification Method Screw through hole in package tab 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) Clamp against package body 12.3 kilogram-force per square centimeter (kgf/cm 2 ) or 17 lbf/in 2 Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 3 C, for up to 1 seconds. See Application Note AN-33, for more details. Ordering Information Part Number Package Packing LQA16T3 TO-2AC units/tube The information contained in this document is subject to change without notice. Rev 1.7 1/11

6 Revision Notes Date 1.6 Released by Qspeed /9 1.7 Converted to Power Integrations Document 1/11 Rev 1.7 1/11 6

7 For the latest updates, visit our website: Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. PATENT INFORMATION The products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations patents may be found at Power Integrations grants its customers a license under certain patent rights as set forth at The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. Copyright 11 Power Integrations, Inc. Power Integrations Worldwide Sales Support Locations WORLD HEADQUARTERS 24 Hellyer Avenue San Jose, CA 9138, USA. Main: Customer Service: Phone: Fax: usasales@powerint.com GERMANY Rueckertstrasse 3 D-8336, Munich Germany Phone: Fax: eurosales@powerint.com JAPAN Kosei Dai-3 Building , Shin-Yokohama, Kohoku-ku, Yokohama-shi, Kanagawa Japan Phone: Fax: japansales@powerint.com TAIWAN F, No. 318, Nei Hu Rd., Sec. 1 Nei Hu District Taipei 114, Taiwan R.O.C. Phone: Fax: taiwansales@powerint.com CHINA (SHANGHAI) Rm 161/161, Tower 1 Kerry Everbright City No. 218 Tianmu Road West Shanghai, P.R.C. 7 Phone: Fax: chinasales@powerint.com INDIA #1, 14 th Main Road Vasanthanagar Bangalore-62 India Phone: Fax: indiasales@powerint.com KOREA RM 62, 6FL Korea City Air Terminal B/D, 19-6 Samsung-Dong, Kangnam-Gu, Seoul, Korea Phone: Fax: koreasales@powerint.com EUROPE HQ 1st Floor, St. James s House East Street, Farnham Surrey GU9 7TJ United Kingdom Phone: +44 () Fax: +44 () eurosales@powerint.com CHINA (SHENZHEN) Rm A, B & C 4 th Floor, Block C, Electronics Science and Technology Building 7 Shennan Zhong Road Shenzhen, Guangdong, P.R.C Phone: Fax: chinasales@powerint.com ITALY Via De Amicis 2 91 Bresso MI Italy Phone: Fax: eurosales@powerint.com SINGAPORE 1 Newton Road, #19-1/ Goldhill Plaza Singapore, 389 Phone: Fax: singaporesales@powerint.com APPLICATIONS HOTLINE World Wide APPLICATIONS FAX World Wide Rev 1.7 1/11