LQA60A300C Qspeed Family
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- Buddy Osborne
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1 Qspeed Family 3 V, 6 A Q-Series Common-Cathode Diode Product Summary I F(AVG) per diode 3 A V RRM 3 V Q RR (Typ at 125 C) 53 nc I RRM (Typ at 125 C) 2.85 A Softness t b /t a (Typ at 125 C).6 A1 K A2 Pin Assignment TO-247 AD A1 K A2 RoHS Compliant Package uses Lead-free plating and Green mold compound.halogen free per IEC Absolute Maximum Ratings General Description This device has the lowest Q RR of any 3V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications AC/DC and DC/DC output rectification Output & freewheeling diodes Motor drive circuits DC-AC inverters Features Low Q RR, Low I RRM, Low t RR High di F /dt capable (1A/µs) Soft recovery Benefits Increases efficiency Eliminates need for snubber circuits Reduces EMI filter component size & count Enables extremely fast switching Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V RRM Peak repetitive reverse voltage 3 V I F(AVG) Average forward current Per Diode, T J = 15 C, T C = 99 C 3 A Per Device, T J = 15 C, T C = 99 C 6 A I FSM Non-repetitive peak surge current Per Diode, 6 Hz, ½ cycle 2 A I FSM Non-repetitive peak surge current Per Diode, ½ cycle of t = 28 µs Sinusoid, T C = 25 C 35 A T J Maximum junction temperature 15 C T STG Storage temperature 55 to 15 C Lead soldering temperature Leads at 1.6mm from case, 1 sec 3 C P D Power dissipation T C = 25 C 113 W Thermal Resistance K (Backside Heatsink) Symbol Resistance from: Conditions Rating Units R θja Junction to ambient Per Device 4 (Typ) C/W R θjc Junction to case Per Diode 1.1 C/W Per Device.6 C/W January 211
2 Electrical Specifications at T J = 25 C (unless otherwise specified) Symbol Parameter Conditions Min Typ Max Units DC Characteristics per diode I R Reverse current per diode V R = 3 V, T J = 25 C µa V R = 3 V, T J = 125 C ma V F Forward voltage per diode I F = 3 A, T J = 25 C V I F = 3 A, T J = 15 C V C J Junction capacitance per diode V R = 1 V, 1 MHz pf Dynamic Characteristics per diode t RR Reverse recovery time, di F /dt =2 A/µs T J =25 C ns per diode V R =2, I F =3 A T J =125 C ns Q RR Reverse recovery charge, di F /dt =2 A/µs T J =25 C nc per diode V R =2, I F =3 A T J =125 C nc I RRM Maximum reverse di F /dt =2 A/µs T J =25 C A recovery current, per diode V R =2, I F =3 A T J =125 C A S t di T J =25 C Softness per diode= b F /dt =2 A/µs V t R =2, I F =3 A T J =125 C a Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-3.) VR L1 D1 DUT I F di F /dt t a t RR t b Pulse generator 15V + Rg Q1.1xI RRM I RRM Figure 1. Reverse Recovery Definitions Figure 2. Reverse Recovery Test Circuit Rev 1.1 1/11 2
3 Electrical Specifications at T J = 25 C (unless otherwise specified) IF (A) Tj=125C Tj=25C IF (A) Tj=125C Tj=25C V F (V) V F (V) Figure 3. Typical I F vs V F Figure 4. Typical I F vs V F Cj (pf) 2 15 IF(AV) (A) VR (V) Case Temperature, T C ( o C) Figure 5. Typical C j vs V R Figure 6. DC Current Derating Curve di F /dt=5a/us 3 di F /dt=2a/us QRR (nc) di F /dt=2a/us trr (ns) 25 2 di F /dt=5a/us I F (A) Figure 7. Typical Q RR vs I F at T j =125 C I F (A) Figure 8. Typical t RR vs I F at T j =125 C 3 Rev 1.1 1/11
4 P (W) Case Temperature, T C ( o C) IF(PEAK) (A) T C ( C) duty cycle=1% duty cycle=3% duty cycle=5% DC Figure 9. Power Derating Curve Figure 1. IF(Peak) vs TC, f=7 khz 1 D=.5 D =.3.1 D=.1 Zth(j-c)/Rth(j-c) D=.5 D=.2 D=.1.1 D=.5 D=.2 Single Pulse.1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ t1(sec) Figure 11. Normalized Maximum Transient Thermal Impedance Rev 1.1 1/11 4
5 Dimensional Outline Drawings TO-247 AD Millimeters Dim MIN MAX A A A b b b c D D D E E E E e 5.44BSC L L1-4.3 ØP ØP1-7.4 ØP Q S 6.15BSC T U Mechanical Mounting Maximum Torque / Pressure specification Method Screw through hole in package tab 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) Clamp against package body 12.3 kilogram-force per square centimeter (kgf/cm 2 ) or 175 lbf/in 2 Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 3 C, for up to 1 seconds. See Application Note AN-33, for more details. 5 Rev 1.1 1/11
6 Ordering Information Part Number Package Packing TO units/tube The information contained in this document is subject to change without notice. Rev 1.1 1/11 6
7 Revision Notes Date 1. Released by Qspeed 8/9 1.1 Converted to Power Integrations Document 1/11 7 Rev 1.1 1/11
8 For the latest updates, visit our website: Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. PATENT INFORMATION The products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations patents may be found at Power Integrations grants its customers a license under certain patent rights as set forth at The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. Copyright 211 Power Integrations, Inc. Power Integrations Worldwide Sales Support Locations WORLD HEADQUARTERS 5245 Hellyer Avenue San Jose, CA 95138, USA. Main: Customer Service: Phone: Fax: usasales@powerint.com GERMANY Rueckertstrasse 3 D-8336, Munich Germany Phone: Fax: eurosales@powerint.com JAPAN Kosei Dai-3 Building , Shin-Yokohama, Kohoku-ku, Yokohama-shi, Kanagawa Japan Phone: Fax: japansales@powerint.com TAIWAN 5F, No. 318, Nei Hu Rd., Sec. 1 Nei Hu District Taipei 114, Taiwan R.O.C. Phone: Fax: taiwansales@powerint.com CHINA (SHANGHAI) Rm 161/161, Tower 1 Kerry Everbright City No. 218 Tianmu Road West Shanghai, P.R.C. 27 Phone: Fax: chinasales@powerint.com INDIA #1, 14 th Main Road Vasanthanagar Bangalore-5652 India Phone: Fax: indiasales@powerint.com KOREA RM 62, 6FL Korea City Air Terminal B/D, Samsung-Dong, Kangnam-Gu, Seoul, Korea Phone: Fax: koreasales@powerint.com EUROPE HQ 1st Floor, St. James s House East Street, Farnham Surrey GU9 7TJ United Kingdom Phone: +44 () Fax: +44 () eurosales@powerint.com CHINA (SHENZHEN) Rm A, B & C 4 th Floor, Block C, Electronics Science and Technology Building 27 Shennan Zhong Road Shenzhen, Guangdong, P.R.C Phone: Fax: chinasales@powerint.com ITALY Via De Amicis Bresso MI Italy Phone: Fax: eurosales@powerint.com SINGAPORE 51 Newton Road, #19-1/5 Goldhill Plaza Singapore, 389 Phone: Fax: singaporesales@powerint.com APPLICATIONS HOTLINE World Wide APPLICATIONS FAX World Wide Rev 1.1 1/11
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