RF circuits design Grzegorz Beziuk. RF characteristics of lumped passive and active elements. References

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1 RF circuits design Grzegorz Beziuk RF characteristics of lumped passive and active elements References [1] Tietze U., Schenk C., Electronic circuits : handbook for design and application, Springer 2008 [2] Golio M., RF and microwave passive and active technologies in: RF and Microwave handbook, 2008, CRC Press Taylor and Francis Group [3] Vishay, 50 GHz Thin Film Microwave Resistors, Products Data Sheet, Vishay 2009, ( [4] AVX RF, AVX RF/Microwave products version 8.1, Products Data Sheet, ( [5] Panasonic, Chip inductors, Products Data Sheet, ( [6] Vishay semicondutors, BFR 93 - Silicon NPN Planar RF Transistor, Product Data Sheet, 2000, Vishay. [7] NXP Semiconductors, BFU725F/N1 NPN wideband silicon germanium RF transistor, Product Data Sheet, 2009, NXP Semiconductors (

2 References [8] Infineon Technologies, BFP 620 NPN Silicon Germanium RF Transistor, Product Data Sheet, 2004, Infineon Technologies (http// [9] ON Semiconductors, MMBFU310LT1G JFET Transistor N Channel, Product Data Sheet, 2009, ON Semiconductors ( [10] EPCOS, SAW Components, Data Sheet R 850, 2002, EPCOS, ( [11] Fabian Wai Lee Kung, RF/Microwave Circuit Design, 2008, Multimedia University, (open source lectures: [12] Microsemi, KV1911A KV1991A VARACTOR DIODES UHF Microwave Super-Hyperabrupt Junction, 2007, Products Data Sheet, Microsemi [13] Hawlett Packard, Surface mount microwave Schottky detector diodes HSMS 2850, HSMS 2860 series, Technical data, Hawlett Packard [14] Maccom Technology Solutions, MA4AGBLP912 AlGaAs Beamlead PIN Diode, Products Data Sheet, Maccom Technology Solutions [15] Vishay Telefunken, BF966S N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode, Product Data Sheet, 1999, Vishay Telefunken [16] Murata Manufacturing, SAW resonators, Products Data Sheet, 2001, Murata Manufacturing Resistors Equivalent circuits SMD resistor: a) for low frequencies range, b) for high frequencies

3 Z R Resistors R + j ( ) [ ω( LR CRR ) ω LRCR ] jω ( 1 ω LC ) + ω C R R R R Inductive properties: Capacitive properties: R < L R / C R R > L R / C R Reflection factor: Γ ( jω) R Z Z R R ( jω) Z0 ( jω) + Z0 Impedance of SMD resistors od the size 1206 with L R 3nH, C R 0.2pF Resistors * Taken from Electronic circuits : handbook for design and application Tietze U., Schenk C. [1]

4 Resistors Typical very high frequency performance electrical model The external reactance (Lc and CG) depends on the PCB material, the layout and assembly technology. Resistors Impedance as a function of frequency for a chip resistor N termination (wraparound) * Taken from 50 GHz Thin Film Microwave Resistors, Products Data Sheet, Vishay [3]

5 Resistors Impedance as a function of frequency for a chip resistor (F and P terminations) * Taken from 50 GHz Thin Film Microwave Resistors, Products Data Sheet, Vishay [3] Capacitors Equivalent circuits SMD capacitor: a) for low frequencies range, b) for high frequencies

6 Capacitors Impedance of capacitor: Resonant frequency: Quality factor (QF): Q C 2 1+ scrc + s LCC ZC ( s) sc f Q res res ( f ) 1 2 π L 1 R Im Re C C C LC C f < fres / 4 { ZC ( j2πf )} 1 { ZC ( j2πf )} 2πfCRC Magnitude of impedance for SMD capacitors of size 1206 with R C 0.2Ω, L C 3nH Capacitors * Taken from Electronic circuits : handbook for design and application Tietze U., Schenk C. [1]

7 Capacitors Example of parameters of the high frequency capacitors * Taken from AVX RF/Microwave products version 8.1, Products Data Sheet, AVX RF [4] Chip Inductors Equivalent circuits SMD inductors: a) for low frequencies range, b) for high frequencies

8 Chip Inductors Parasitic resistance R ( f ) k f L RL (skin effect!!!) Resistive losses coefficient For 1206 size inductor: k L k RL 600Ω / k L L ( Hz H ) For 1812 size inductor: k L 1200Ω / ( Hz H ) For inductors larger than 1812 size, and L>10µH : ( ) 0. 7 k RL 20Ω / Hz L Resonant frequency: Phase resonant frequency Magnitude resonant frequency Chip Inductors f f f Q res res resph resmax Quality factor (QF): Q ( f ) L 1 2π LC f Im Re 2π k res f RL res 4 L L C 3 L 1 1 Q 2 res 1 1 2Q 4 res f < fres / 4 { ZL ( j2 f )} 2πfL { Z ( j2πf )} R ( f ) L (an impedance of inductor has a real value) π 2πL k L RL f

9 Chip Inductors Magnitudes of impedance and inductor quality for SMD inductors of size 1206 with k L 1200Ω /( Hz H ) and C L 0.2pF * Taken from Electronic circuits : handbook for design and application Tietze U., Schenk C. [1] Chip Inductors * Taken from Chip inductors, Panasonic Products Data Sheet, [5]

10 Chip Inductors * Taken from Chip inductors, Panasonic Products Data Sheet, [5] Chokes Choke is a kind of inductor. Chokes are used below 2 GHz, but there are some chokes applications extends to tens of GHz. Chokes: - for high frequency are high impedance elements - for low frequency and direct current have very little loss Chockes are use in the bias circuits of active elements. Because the choke is an inductors with ferrite core, for high frequency (f>2ghz) its resonances are absorbed by losses in a ferrite.

Basic structure of Surface Acoustic Wave (SAW) resonator SAW filters 1-port SAW RESONATOR has one IDT (Inter Digital Transducer), which generates and receives SAW, and

11 Ferrite Baluns Ferrite balluns are cross between transmission lines and chokes. Ferrrite baluns are most useful between 10 khz and 2 GHz. Manufacturers desigh baluns for specific impedance levels and bandwitdths. Basic structure of Surface Acoustic Wave (SAW) resonator SAW filters 1-port SAW RESONATOR has one IDT (Inter Digital Transducer), which generates and receives SAW, and two grating reflectors, which reflect SAW and generate a standing wave between the two reflectors. IDT and reflectors are fabricated on quartz crystal substrate by photolithographic process. Frequency range: from 50kHz 1GHz. * Taken from SAW resonators, Murata Manufacturing Products Data Sheet, [16]

Features of the SAW: SAW filters - high Oscillation Frequency Stability - adjustment free - SAW resonator is stable against peripheral circuit or supply voltage fluctuation - simple/low cost circuit

12 Features of the SAW: SAW filters - high Oscillation Frequency Stability - adjustment free - SAW resonator is stable against peripheral circuit or supply voltage fluctuation - simple/low cost circuit by fundamental oscillation - oscillates with its fundamental mode - small size package - they can be applied Colpitts Oscillator circuit SAW filters SAW equivalent circuit * Taken from SAW resonators, Murata Manufacturing Products Data Sheet, [16]

13 SAW filters * Taken from SAW resonators, Murata Manufacturing Products Data Sheet, [16] Z ε d D For R0, G0: 0 L C 1 2π µ ln ε ' Caoxial Cables RLCG parameters: Z o 50, 75, 93 Ω. 60 D d ( D / d ) ln ε reff ε ε ' jε '' R + πσδ D d µ L ln( D / d ) 2π 2πε ' C ln ( D / d ) 2πωε '' G ln ( D / d )

14 Caoxial Cables Cut-off frequency: f cut off 7.51 ε reff 1 D + d Velocity of propagation: v p c ε reff Maximum peak power: 2 E max P max D ( D / d ) ( D / d ) 2 ln Caoxial Cables * Taken from Introduction to high-speed PCB design, Kung [11]

15 Caoxial Cables Why 50Ω? * Taken from Introduction to high-speed PCB design, Kung [11] Caoxial Cables * Taken from Introduction to high-speed PCB design, Kung [11]

16 Connectors and Adapters * Taken from Introduction to high-speed PCB design, Kung [11] Connectors and Adapters * Taken from Introduction to high-speed PCB design, Kung [11]

17 Connectors and Adapters Connector type BNC SMB SMC TNC Type-N 7 mm SMA 3.5 mm 2.9 mm 2.4 mm Cut-off frequency [GHz] (0.3) Varactors Varactors applications: - harmonic generation - parametric amplification - mixing - detection - voltage variable tuning Advantages of varactors: - low loss - low noise Non-symetric Symetric

18 Varactors Example of varactors characteristics * Taken from KV1911A KV1991A VARACTOR DIODES, Microsemi [12] Schottky diode Schottky diode (metal-semiconductor juntion) applications: - harmonic generators (mutipliers) GHz and THz - mixers - detectors In frequency mutliplication is used a nonlinear capacitans versus voltage.

19 Schottky diode * Taken from Surface mount microwave Schottky detector diodes HSMS 2850, HSMS 2860 series, Hawlet Packard [13] PIN diodes PIN diodes applications: - RF and microwave attenuators - RF and microwave tunable matching circuits - RF and microwave switches

20 PIN diodes * Taken from MA4AGBLP912 AlGaAs Beamlead PIN Diode, Maccom Technology Solutions [14] Bipolar junction transistors(bjts) Base Emmiter N P N Colector I E IB I C U BE - + U CB - +

21 Bipolar junction transistors (BJTs) - HF bipolar transistors are NPN type because electron mobility is much higher than hole mobility - the BASE thickness is very thin to improve current gain β (h fe ) - Inter-digital BASE and EMITTER contacts are employed to reduce base spreading resistance r bb and to reduce the noise generated by the transistor - Commercial RF transistors in discrete form can have f T up to 10GHz. Bipolar junction transistors(bjts) Bias circuits of BJT read the textbooks about basics of an electronic circuits

22 Bipolar junction transistors(bjts) * Taken from Electronic circuits : handbook for design and application Tietze U., Schenk C. [1] Bipolar junction transistors(bjts) B r bb' B' c B'C C c B'E r B'E g m U B'E r CE E Hybrid π (Giacoletto) model of the BJT.

23 Bipolar junction transistors(bjts) r B' E βi ϕ CQ T c B' E ICQ 2 πf ϕ T T gm ω T g m ICQ ϕ T U r CE I EY CQ c BC ' U cbc ' 0 1 U Hybrid π model elements. CB DC m For frequencies above 300 MHz transistor should be modelled by S parameters. Bipolar junction transistors(bjts)

24 Bipolar junction transistors(bjts) Example of HF package equivalent circuit of BJT BFP 620 * Taken from BFP 620 NPN Silicon Germanium RF Transistor, Product Data Sheet, 2004, Infineon Technologies [8] Bipolar junction transistors(bjts) * Taken from BFR 93 - Silicon NPN Planar RF Transistor, Product Data Sheet, 2000, Vishay [6]

25 Bipolar junction transistors(bjts) * Taken from BFR 93 - Silicon NPN Planar RF Transistor, Product Data Sheet, 2000, Vishay [6] Bipolar junction transistors(bjts) * Taken from BFR 93 - Silicon NPN Planar RF Transistor, Product Data Sheet, 2000, Vishay [6]

26 FET Drain D Gate p+ n p+ Gate G Source N-channel FET S FET ID U GS1 < U GS2 I D U DS 0.1V + n U DS 0.1V + p+ n p+ - p+ p+ - - U GS1 - U GS2 + barrier layer + barrier layer

27 FET ID U GS1 < U GS2 I D U DS 10V + n U DS 10V + p+ n p+ - p+ p+ - - U GS1 - U GS2 + barrier layer + barrier layer FET Bias circuits of FET and FET with P chanel read the textbooks about basics of an electronic circuits

28 MOSFET Source Gate Drain Source Gate Drain Source Gate Drain Source Gate Drain SiO 2 SiO 2 SiO 2 SiO 2 p+ p p+ n+ p n+ p+ p+ n+ n+ n p n p Base Base Base Base There are the MOSFET with two gates, too. MOSFET U DS 0.1V U DS 10V - + I D D n+ - + I D D n+ G SiO 2 p G SiO 2 p + U GS S n+ + U GS S n+ - - N-channel MOSFET

29 MOSFET Bias circuits of MOSFET and more information about other types of MOSFETs read the textbooks about basics of an electronic circuits FET and MOSFET FET and MOSFET hybrid π model

30 FET and MOSFET FET and MOSFET * Taken from BF966S N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode, Product Data Sheet, 1999, Vishay Telefunken [15]

31 FET and MOSFET * Taken from BF966S N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode, Product Data Sheet, 1999, Vishay Telefunken [15] FET and MOSFET * Taken from BF966S N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode, Product Data Sheet, 1999, Vishay Telefunken [15]

32 FET and MOSFET * Taken from BF966S N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode, Product Data Sheet, 1999, Vishay Telefunken [15] FET and MOSFET * Taken from BF966S N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode, Product Data Sheet, 1999, Vishay Telefunken [15]

33 Other types of RF and microwave transistors There are other types of the microwaves transistors: - Heterostructure Bipolar Transistor (HBTs) - High Electron Mobility Transistor (HEMT) They are commercialy avaible such as the discrete elements. They are integrated in microwave IC such as i. e. LNA, power amplifiers.

Dr.-Ing. Ulrich L. Rohde

Dr.-Ing. Ulrich L. Rohde Noise in Oscillators with Active Inductors Presented to the Faculty 3 : Mechanical engineering, Electrical engineering and industrial engineering, Brandenburg University of Technology