MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k
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1 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MXIMUM RTINGS (T = 25 C) PIN BSE (INPUT) PIN CONNECTIONS R R2 PIN COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MRKING DIGRMS XX M XXX M SC 59 CSE 8D STYLE SOT 2 CSE 8 STYLE 6 Rating Symbol Max Unit Collector Base Voltage V CBO 5 Collector Emitter Voltage V CEO 5 XX M SC 7/SOT 2 CSE 49 STYLE Collector Current Continuous I C mdc Input Forward Voltage V IN(fwd) Input Reverse Voltage V IN(rev) 6 XX M SC 75 CSE 46 STYLE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XX M SOT 72 CSE 6 STYLE X M SOT 2 CSE 524 STYLE XXX = Specific Device Code M = Date Code* = Pb Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMTION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 22 October, 26 Rev. Publication Order Number: DTC4T/D
2 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Table. ORDERING INFORMTION Device Part Marking Package Shipping MUN226TG, SMUN226TG 8F SC 59 / Tape & Reel MMUN226LTG, SMMUN226LTG 8F SOT 2 SMMUN226LTG 8F SOT 2 MUN526TG, NSVMUN526TG 8F SC 7/SOT 2 DTC4TETG 8F SC 75 DTC4TMT5G 8F SOT 72 NSBC4TFT5G F (8 ) SOT 2 / Tape & Reel / Tape & Reel / Tape & Reel / Tape & Reel 8 / Tape & Reel 8 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. * (xx ) = Degree rotation in the clockwise direction., POWER DISSIPTION () () (2) () (4) (5) () SC 75 and SC 7/SOT2; Minimum Pad (2) SC 59; Minimum Pad () SOT 2; Minimum Pad (4) SOT 2; mm 2, oz. copper trace (5) SOT 72; Minimum Pad MBIENT TEMPERTURE ( C) Figure. Derating Curve 2
3 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Table 2. THERML CHRCTERISTICS THERML CHRCTERISTICS (SC 59) (MUN226) Characteristic Symbol Max Unit T = 25 C (Note ) Derate above 25 C (Note ) Thermal Resistance, (Note ) Junction to mbient Thermal Resistance, (Note ) Junction to Lead R J 54 7 R JL Junction and Storage Temperature Range T J, T stg 55 to +5 C THERML CHRCTERISTICS (SOT 2) (MMUN226L) T = 25 C (Note ) Derate above 25 C (Note ) Thermal Resistance, (Note ) Junction to mbient Thermal Resistance, (Note ) Junction to Lead R J 58 R JL Junction and Storage Temperature Range T J, T stg 55 to +5 C THERML CHRCTERISTICS (SC 7/SOT 2) (MUN526) T = 25 C (Note ) Derate above 25 C (Note ) Thermal Resistance, (Note ) Junction to mbient Thermal Resistance, (Note ) Junction to Lead R J 68 4 R JL 28 2 Junction and Storage Temperature Range T J, T stg 55 to +5 C THERML CHRCTERISTICS (SC 75) (DTC4TE) T = 25 C (Note ) Derate above 25 C (Note ) Thermal Resistance, (Note ) Junction to mbient R J 6 4 Junction and Storage Temperature Range T J, T stg 55 to +5 C THERML CHRCTERISTICS (SOT 72) (DTC4TM) T = 25 C (Note ) Derate above 25 C (Note ) Thermal Resistance, (Note ) Junction to mbient R J Junction and Storage Temperature Range T J, T stg 55 to +5 C. FR Minimum Pad. 2. FR x. Inch Pad.. FR mm 2, oz. copper traces, still air. 4. FR 5 mm 2, oz. copper traces, still air.
4 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Table 2. THERML CHRCTERISTICS Characteristic Symbol Max Unit THERML CHRCTERISTICS (SOT 2) (NSBC4TF) T = 25 C (Note ) (Note 4) Derate above 25 C (Note ) (Note 4) Thermal Resistance, (Note ) Junction to mbient (Note 4) R J Thermal Resistance, Junction to Lead (Note ) R JL 9 Junction and Storage Temperature Range T J, T stg 55 to +5 C. FR Minimum Pad. 2. FR x. Inch Pad.. FR mm 2, oz. copper traces, still air. 4. FR 5 mm 2, oz. copper traces, still air. Table. ELECTRICL CHRCTERISTICS (T = 25 C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHRCTERISTICS Collector Base Cutoff Current (V CB = 5 V, I E = ) Collector Emitter Cutoff Current (V CE = 5 V, I B = ) Emitter Base Cutoff Current (V EB = 6. V, I C = ) Collector Base Breakdown Voltage (I C =, I E = ) Collector Emitter Breakdown Voltage (Note 5) (I C = 2. m, I B = ) ON CHRCTERISTICS DC Current Gain (Note 5) (I C = 5. m, V CE = V) Collector Emitter Saturation Voltage (Note 5) (I C = m, I B =. m) Input Voltage (off) (V CE = 5. V, I C = ) Input Voltage (on) (V CE =. V, I C = m) Output Voltage (on) (V CC = 5. V, V B = 2.5 V, R L =. k ) Output Voltage (off) (V CC = 5. V, V B =.25 V, R L =. k ) CBO I CEO 5 I EBO.9 V (BR)CBO 5 V (BR)CEO 5 h FE 6 5 V CE(sat).25 V i(off).6.5 V i(on)..9 V OL.2 V OH 4.9 ndc ndc mdc Input Resistor R k Resistor Ratio R /R 2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = msec, Duty Cycle 2%. 4
5 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF TYPICL CHRCTERISTICS MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM V CE(sat), COLLECTOR EMITTER VOLTGE (V). I C /I B = 25 C 55 C 5 C h FE, DC CURRENT GIN 5 C 25 C 55 C V CE = V I C, COLLECTOR CURRENT (m) I C, COLLECTOR CURRENT (m) Figure 2. V CE(sat) vs. I C Figure. DC Current Gain C ob, OUTPUT CPCITNCE (pf) f = khz I E = T = 25 C I C, COLLECTOR CURRENT (m). 5 C 25 C 55 C V O = 5 V V R, REVERSE VOLTGE (V) V in, INPUT VOLTGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage V in, INPUT VOLTGE (V). 25 C 5 C 55 C 2 I C, COLLECTOR CURRENT (m) V O =.2 V 4 5 Figure 6. Input Voltage vs. Output Current 5
6 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF PCKGE DIMENSIONS SC 59 CSE 8D 4 ISSUE H D. DIMENSIONING ND TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. H E e 2 b E L C DIM MIN NOM MX MIN b c D E e L H E STYLE : PIN. BSE. COLLECTOR INCHES NOM MX SCLE : mm inches 6
7 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF PCKGE DIMENSIONS SOT 2 (TO 26) CSE 8 8 ISSUE R E D 2 e TOP VIEW SIDE VIEW HE L X b L VIEW C SEE VIEW C c END VIEW T.25. DIMENSIONING ND TOLERNCING PER SME Y4.5M, CONTROLLING DIMENSION:.. MXIMUM LED THICKNESS INCLUDES LED FINISH. MINIMUM LED THICKNESS IS THE MINIMUM THICKNESS OF THE BSE MTERIL. 4. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. INCHES DIM MIN NOM MX MIN NOM MX b c D E e L L H E T STYLE 6: PIN. BSE. COLLECTOR RECOMMENDED 2.9 X.9 X.8.95 PITCH DIMENSIONS: 7
8 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF PCKGE DIMENSIONS SC 7 (SOT 2) CSE 49 4 ISSUE N D e. DIMENSIONING ND TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION: INCH. H E 2 e E b INCHES DIM MIN NOM MX MIN NOM MX REF.28 REF b c D E e e.65 BSC.26 BSC L H E (.2) 2 L c STYLE : PIN. BSE. COLLECTOR SCLE : mm inches 8
9 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF PCKGE DIMENSIONS SC 75/SOT 46 CSE 46 ISSUE F b PL.2 (.8) M D E 2 e D H E.2 (.8) E. DIMENSIONING ND TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. INCHES DIM MIN NOM MX MIN NOM MX b C D E e. BSC.4 BSC L H E C L STYLE : PIN. BSE. COLLECTOR SCLE : mm inches 9
10 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF PCKGE DIMENSIONS SOT 72 CSE 6 ISSUE D b 2X e D 2 TOP VIEW X X L2 BOTTOM VIEW E Y 2X b.8 X Y X L H E C SIDE VIEW. DIMENSIONING ND TOLERNCING PER SME Y4.5M, CONTROLLING DIMENSION:.. MXIMUM LED THICKNESS INCLUDES LED FINISH. MINIMUM LED THICKNESS IS THE MINIMUM THICKNESS OF BSE MTERIL. 4. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. DIM MIN NOM MX b b C D E e.4 BSC H E L.29 REF L STYLE : PIN. BSE. COLLECTOR RECOMMENDED 2X.4 2X.27 PCKGE OUTLINE.5 X.52.6 DIMENSIONS:
11 MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF PCKGE DIMENSIONS c 2 D X E TOP VIEW H E SIDE VIEW Y SOT 2 CSE 524 ISSUE C. DIMENSIONING ND TOLERNCING PER SME Y4.5M, CONTROLLING DIMENSION:.. MXIMUM LED THICKNESS INCLUDES LED FINISH. MINIMUM LED THICKNESS IS THE MINIMUM THICKNESS OF BSE MTERIL. 4. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. DIM MIN MX.4.4 b.5.28 b..2 c.7.7 D E e.5.4 H E.95.5 L.85 REF L2.5.5 e X L2 b.8 X Y STYLE : PIN. BSE. COLLECTOR 2X b BOTTOM VIEW X L.2 X X.2 PCKGE OUTLINE DIMENSIONS: ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FD Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 2nd Pkwy, urora, Colorado 8 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative DTC4T/D
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