The Doherty Power Amplifier 1936 to the Present Day
|
|
- Osborne Pearson
- 5 years ago
- Views:
Transcription
1 TH1-E1 The Doherty Power Amplifier 1936 to the Present Day Ray Pengelly, Prism Consulting NC, LLC Hillsborough, NC USA 1
2 Summary Early History Broadcast Transmitters Handset Transmitters Cellular Infrastructure Transmitters Modern Trends Conclusions 2
3 Early Days of Doherty Amplifiers IMS2015 AM Radio Transmitters Invented in 1936 Patented in 1940 Improved Conversion Efficiency by a factor of 2 to over 60% Technique adopted by Western Electric, RCA, Continental and Marconi Employed by Western Electric and Bell Laboratories 3
4 Evolution of Tube-Based Doherty Amplifiers IMS KWatts Kwatts (BBC UK) 4
5 Chronology of Tube-Based Doherty Amplifiers Installation Year 1936 to 1940 AM, 30 KHz to 3 MHz 1953 AM, 30 KHz to 300 KHz 1956 AM, 30 KHz to 300 KHz 1978 AM, 300 KHz to 3 MHz 1979 AM, 300 KHz to 3 MHz Frequency Power Level Territory 50 KW (500 KW total) 500 KW (1 MW total) USA Europe (Voice of America) 1 MW East Asia (Voice of America) 150 KW (5 MW total) 2 MW (16 MW total) UK (BBC) Middle East All Doherty amplifiers were water-cooled requiring major infrastructure builds in certain countries such as the Middle East 5
6 Solid-State Doherty PA s for Broadcast Transmitters 6
7 Motivations for High Efficiency Solutions for Broadcast IMS2015 7
8 Solid-State Doherty PA s for Broadcast Transmitters Replacing IOTs (Inductive Output Tubes) at power levels up to 50 KW Solid-state transistors used for both Digital Radio and Digital TV Transmitters mainly in UHF range Amplifiers dominated by Silicon LDMOSFET output stages today For digital TV in particular The characteristics of the carrier and peaking amplifiers change as the RF input changes, so pre-correction has to compensate for this to avoid creating large amounts of distortion and spurious spectral emissions Picture courtesy of Rohde and Schwarz 8
9 Typical Performance of Si LDMOSFET Doherty Amplifier used for Broadcast Applications Doherty PA Efficiency is maintained at >53% over 3 db back-off Freescale MRF6VP3450 Transistor - Peak Power: MHz 9
10 4 - Up MRF6VP3450H Doherty Modules for Broadcast IMS2015 Courtesy of Freescale and Egatel 10
11 Example of State-of-the-Art Wideband Broadcast Doherty PA IMS2015 The key achievement and importance to industry lies in the fact that these results were achieved using standard 50V LDMOS devices with an easy to implement passive input splitter. This approach allows low-cost energy-efficient high-power wideband amplifier implementations and easy system integration. The realized wideband DPA demonstrator covers the entire UHF TV band ( MHz) with an average efficiency of 43% while maintaining peak power capability greater than 700-W over the entire band. This demonstrator offered 15-20% more efficiency than the currently used wideband class-ab power amplifiers used in broadcast transmitter systems (Courtesy - NXP and Delft University of Technology) 11
12 Solid-State Doherty PA s for Handset Transmitters 12
13 L-Band Iridium Satellite Handset Doherty Power Amplifiers Balanced Doherty PA produced 7 watts peak power IMS2015 Circa courtesy of Mike Gaynor (Ex-Motorola) Each Doherty PA provided > 48% drain efficiency Hybrid Chip and Wire Construction GaAs phemt Technology 13
14 Challenges for and technologies used in Handset Doherty PA s IMS2015 MMIC DPA s using 0.25 and 0.15mm GaAs phemt processes have been deployed at 17 and 20 GHz respectively for digital satellite systems MMIC DPA s using 0.13mm RF CMOS process have been deployed at 60 GHz for wireless personal network transceivers But MMIC DPA s for 900 MHz, 1800 MHz, 2140 MHz etc.. handset applications are more difficult to design because of low cost and chip size constraints CMOS and HBT processes are popular semiconductor technologies Lumped elements to reduce size Novel circuit approaches to reduce size e.g MHz MMIC DPA in 2mm InGaP/GaAs Low power mode: 40% efficiency at 23 dbm out High power mode: 38% efficiency at 28 dbm out Conventional DPA Series Type DPA Courtesy of POSTECH, S. Korea 14
15 Latest MMIC DPA s for LTE Handsets Novel circuit approaches used to produce small handset DPA s have been recently extended to provide solutions for LTE applications across bandwidths of 1.6 to 2.1 GHz MMICs use low Q quarterwave transformers; lumped element phase compensation networks on the input and incorporation of transistor output capacitances into phase compensation networks on the output InGaP/GaAs 2mm HBT process Off-chip bond wires for critical inductors IMS2015 Gain > 28 db Average Output Power 27.5 dbm PAE 36% 10 MHz BW LTE signal with 7.5 db PAR EVM 3.8% ACLR of -32 dbc Courtesy of POSTECH and Samsung, South Korea 15
16 Solid-State Doherty PA s for Cellular Infrastructure Transmitters 16
17 Cellular Remote Radio Head Doherty Power Amplifier Examples - the de-facto standard IMS2015 Nokia MHz 150 Watts Huawei MHz 60 Watts All units averaged > 40% overall efficiency Ericsson MHz 80 Watts 17
18 Modern Trends in Doherty Power Amplifiers 18
19 Modern Trends - Summary Wealth of semiconductor technologies being used RF CMOS, GaAs phemt, InGaP/GaAs HBT, Si LDMOS and GaN HEMT Range of frequencies and power levels being covered UHF to 60 GHz, 100 s of mw s to KW s Variety of circuit techniques have been adopted Classical Inverted Asymmetric unequal power division to carrier and peaker; different sized transistors for carrier and peaker and combinations of both N-Way to increase backed-off (linear) power range for high efficiency Use of different classes of amplifiers in carrier and peaker Multi-band (dual and tri-band) Broadband Reconfigurable using switched sections or varactor tuning 19
20 Asymmetric DPA s For power back-off levels greater than 6 db, further improvements in efficiency are possible with asymmetric Doherty topologies where the Carrier and Peaking amplifiers exhibit unequal power capability Implementation requires unequal device geometries for the carrier and peaking amplifiers This asymmetry introduces difficulties in designing proper input/output matching structures for the peaking/carrier amplifiers IMS2015 Example of LDMOS FET asymmetric DPA Carrier: 140 Watts 2 Peakers: 280 Watts 2.11 to 2.14 GHz 15 db Gain Pave = 75 8 db back-off; 46% efficiency with 3G W-CDMA Courtesy of Freescale, 2010 Example of GaN HEMT Asymmetric DPA Carrier: 150 Watts Peaker: 300 Watts 2.5 to 2.7 GHz 14 db Gain Pave = 80 8 db back-off 49% efficiency with 4G LTE Courtesy of Cree,
21 N-Way DPA s N-Way DPA s have more than one peaking amplifier Number of efficiency peaking points at backed-off power is directly proportional to the number of peaking stages Optimized transistor sizes to maximize backed-off efficiency e.g. 1:3:4 for a 3- way DPA for 12 db back-off Disadvantage of N-Way is lower gain because of N-Way input splitter IMS2015 Example of 4-Way DPA using 25 Watt Cree HEMTs Output Power = 100 Watts Peak Efficiency = 77% Single Carrier W-CDMA Signal at 2.14 GHz with a PAR of 6.5 db Drain Efficiency = 61% Average Power = 20 Watts ACLR = -31 dbc Courtesy of Bell Labs, Alcatel Lucent 21
22 Multi-Band, Broadband and Re-Configurable DPA s Multi-band, broadband and reconfigurable DPA s provide solutions for next generation small-cell through macro-cell base-station transmitters Need to be able to cover multiple carrier frequencies in the 800 to 3500 MHz bands Need to be able to cover different signal standards with multiple PAR s IMS2015 Example of Reconfigurable DPA for 1.9 to 2.6 GHz using MEMS switches (Mohamed, Boumaiza & Mansour, 2013) Power Gain > 11 db Pave = 32 dbm I/P back-off = 9 db Efficiencies: 60% at 1.9 GHz 61% at 2.14 GHz 64% at 2.6 GHz Example of Tri-Band DPA for 1.8 to 2.7 GHz Power Gain > 11 db Pave = 38 dbm PAR = 6.5 db Efficiencies: 58% at 1.85 GHz 50% at 2.15 GHz 42% at 2.65 GHz Courtesy of Bell Labs, Alcatel Lucent 22
23 GaN HEMT Doherty PA Efficiencies versus Time PA PA Drain Efficiency, % -- % Assumes PAR of 7.5 db and frequencies between 2.1 and 2.7 GHz Year 23
24 Conclusions DPA s are extensively used in broadcast transmitters and cellular basestations not so much in handsets Innovative circuit designs to improve efficiencies at high backed-off power levels are becoming more common Broadband and multi-band DPA s have been successfully demonstrated for the latest 5G wireless requirements MMIC DPA s are today deployed from < 30 MHz to > 60 GHz! Doherty Power Amplifiers, after 80 years, are alive and well! 24
25 Thank you For further details contact 25
Doherty s Legacy. Raymond Pengelly, Christian Fager, and Mustafa Özen
COVER FEATURE Doherty s Legacy Raymond Pengelly, Christian Fager, and Mustafa Özen William H. Doherty William H. Doherty was an American electrical engineer, best known for his invention of the Doherty
More informationGaN Power Amplifiers for Next- Generation Wireless Communications
GaN Power Amplifiers for Next- Generation Wireless Communications Jennifer Kitchen Arizona State University Students: Ruhul Hasin, Mahdi Javid, Soroush Moallemi, Shishir Shukla, Rick Welker Wireless Communications
More informationEnergy Efficient Transmitters for Future Wireless Applications
Energy Efficient Transmitters for Future Wireless Applications Christian Fager christian.fager@chalmers.se C E N T R E Microwave Electronics Laboratory Department of Microtechnology and Nanoscience Chalmers
More informationFreescale RF Solutions
Freescale RF Solutions EUF-IND-T0977 Yan Vainter J A N. 2 0 1 5 TM External Use Freescale Overview 17,000 employees 2013 revenue $4.19b Headquartered in Austin, TX 5 Business Groups Microcontrollers Automotive
More informationA Review of Applications for High Power GaN HEMT Transistors and MMICs. Ray Pengelly and Chris Harris, Cree RF Products April, 2013
A Review of Applications for High Power GaN HEMT Transistors and MMICs Ray Pengelly and Chris Harris, Cree RF Products April, 2013 Summary Available High Power RF Markets for VEDs and GaN HEMTs Advantages
More informationA GHz Highly Linear Broadband Power Amplifier for LTE-A Application
Progress In Electromagnetics Research C, Vol. 66, 47 54, 2016 A 1.8 2.8 GHz Highly Linear Broadband Power Amplifier for LTE-A Application Chun-Qing Chen, Ming-Li Hao, Zhi-Qiang Li, Ze-Bao Du, and Hao Yang
More informationToday s wireless system
From May 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High-Power, High-Efficiency GaN HEMT Power Amplifiers for 4G Applications By Simon Wood, Ray Pengelly, Don Farrell, and
More informationPerformance and Applications of GaN MMICs. Professor Jonathan Scott & Professor Anthony Parker
Performance and Applications of GaN MMICs Professor Jonathan Scott & Professor Anthony Parker Contents Invited paper license to ramble? Contents: Not a memory dump You will learn something important If
More informationDESIGN OF AN S-BAND TWO-WAY INVERTED ASYM- METRICAL DOHERTY POWER AMPLIFIER FOR LONG TERM EVOLUTION APPLICATIONS
Progress In Electromagnetics Research Letters, Vol. 39, 73 80, 2013 DESIGN OF AN S-BAND TWO-WAY INVERTED ASYM- METRICAL DOHERTY POWER AMPLIFIER FOR LONG TERM EVOLUTION APPLICATIONS Hai-Jin Zhou * and Hua
More informationMMICs based on pseudomorphic
phemt MMIC Power Amplifiers for Base Stations and Adaptive Arrays GaAs technology is used in a family of amplifiers for wireless applications requiring good gain, efficiency and linearity Raymond S. Pengelly,
More informationRECENT MOBILE handsets for code-division multiple-access
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 55, NO. 4, APRIL 2007 633 The Doherty Power Amplifier With On-Chip Dynamic Bias Control Circuit for Handset Application Joongjin Nam and Bumman
More informationTD-SCDMA and TDD-LTE Solution
TD-SCDMA and TDD-LTE Solution FTF-NET-F0479 Song Di China RF Application Manager Laurence Li China RF Marketing M A Y. 2 0 1 4 TM External Use Agenda TD-SCDMA and TDD-LTE Evolution Overview Solutions Recommendation
More information2014 Power Amplifier Symposium BROADBAND PA TECHNIQUES FOR EFFICIENCY ENHANCEMENT
14 Power Amlifier Symosium BROADBAND PA TECHNIQUES FOR EFFICIENCY ENHANCEMENT Dr. Andrei Grebennikov grandrei@ieee.org 1 BROADBAND POWER AMPIFIER TECHNIQUES FOR EFFICIENCY ENHANCEMENT 1.Reactance comensation
More informationRay Pengelly, Cree RF and Microwave Products, Research Triangle Park, NC October 21, 2010
Ray Pengelly, Cree RF and Microwave Products, Research Triangle Park, NC 27709 October 21, 2010 Agenda GaN HEMT Transistor Structures High Power Densities Blessing or Curse? Thermal Management CW, Pulsed
More informationProduct Description. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator RFMD0014 DIRECT QUADRATURE MODULATOR Package: QFN, 24-Pin, 4mm x 4mm Features ACPR Performance: -70 dbc Typ. for 1-Carrier WCDMA Very High Linearity: +26 dbm OIP3 Very Low Noise
More informationEvaluation of High Efficiency PAs for use in
CENTRE Evaluation of High Efficiency PAs for use in Supply- and Load-Modulation Transmitters Christian Fager, Hossein Mashad Nemati, Ulf Gustavsson,,* Rik Jos, and Herbert Zirath GigaHertz centre Chalmers
More informationWideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios
The University Of Cincinnati College of Engineering Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios Seth W. Waldstein The University of Cincinnati-Main Campus Miguel A. Barbosa
More informationSimple Class A Power Amplifier Circuits Design Tutorial On Doherty
Simple Class A Power Amplifier Circuits Design Tutorial On Doherty Conference, Tutorials, Advanced-Circuit-Design Forums, and the Short Course. Memories have evolved continuously since the simple days
More informationHigh Power Two- Stage Class-AB/J Power Amplifier with High Gain and
MPRA Munich Personal RePEc Archive High Power Two- Stage Class-AB/J Power Amplifier with High Gain and Efficiency Fatemeh Rahmani and Farhad Razaghian and Alireza Kashaninia Department of Electronics,
More informationEECS-730 High-Power Inverted Doherty Power Amplifier for Broadband Application
EECS-730 High-Power Inverted Doherty Power Amplifier for Broadband Application Jehyeon Gu* Mincheol Seo Hwiseob Lee Jinhee Kwon Junghyun Ham Hyungchul Kim and Youngoo Yang Sungkyunkwan University 300 Cheoncheon-dong
More informationPOSTECH Activities on CMOS based Linear Power Amplifiers
1 POSTECH Activities on CMOS based Linear Power Amplifiers Jan. 16. 2006 Bumman Kim, & Jongchan Kang MMIC Laboratory Department of EE, POSTECH Presentation Outline 2 Motivation Basic Design Approach CMOS
More informationA High Linearity and Efficiency Doherty Power Amplifier for Retrodirective Communication
PIERS ONLINE, VOL. 4, NO. 2, 2008 151 A High Linearity and Efficiency Doherty Power Amplifier for Retrodirective Communication Xiaoqun Chen, Yuchun Guo, and Xiaowei Shi National Key Laboratory of Antennas
More informationWelcome. Steven Baker Founder & Director OpenET Alliance. Andy Howard Senior Application Specialist Agilent EEsof EDA Agilent Technologies, Inc.
Welcome Steven Baker Founder & Director OpenET Alliance Andy Howard Senior Application Specialist Agilent EEsof EDA 1 Outline Steven Baker, OpenET Alliance What problem are we trying to solve? What is
More informationPrepared for the Engineers of Samsung Electronics RF transmitter & power amplifier
Prepared for the Engineers of Samsung Electronics RF transmitter & power amplifier Changsik Yoo Dept. Electrical and Computer Engineering Hanyang University, Seoul, Korea 1 Wireless system market trends
More informationRF2162 3V 900MHz LINEAR AMPLIFIER
3V 900MHz LINEAR AMPLIFIER Package Style: QFN, 16-Pin, 4x4 Features Single 3V Supply 9dBm Linear Output Power 9dB Linear Gain 35% Linear Efficiency Onboard Power Down Mode 800MHz to 960MHz Operation Applications
More informationSmart Energy Solutions for the Wireless Home
Smart Energy Solutions for the Wireless Home Advanced Metering Infrastructure (AMI) ZigBee (IEEE 802.15.4) Wireless Local Area Networks (WLAN) Industrial and Home Control Plug-in Hybrid Electric Vehicles
More informationFDD Solution Overview Including Airfast Gen 2 Product Introduction
FDD Solution Overview Including Airfast Gen 2 Product Introduction FTF-NET-F0478 Suhail Agwani Product Line Manager, RF Cellular Products MAY.2014 TM External Use Agenda Freescale RF Introduction Airfast
More informationDesign of a CMOS Distributed Power Amplifier with Gradual Changed Gain Cells
Chinese Journal of Electronics Vol.27, No.6, Nov. 2018 Design of a CMOS Distributed Power Amplifier with Gradual Changed Gain Cells ZHANG Ying 1,2,LIZeyou 1,2, YANG Hua 1,2,GENGXiao 1,2 and ZHANG Yi 1,2
More informationThe following part numbers from this appnote are not recommended for new design. Please call sales
California Eastern Laboratories APPLICATION NOTE AN1038 A 70-W S-Band Amplifier For MMDS & Wireless Data/Internet Applications Shansong Song and Raymond Basset California Eastern Laboratories, Inc 4590
More informationAnnouncing Second-Generation Airfast RF Power Solutions
Announcing Second-Generation Airfast RF Power Solutions A2T07D160W04S A2T07H310-24S A2I22D050N A2I25D012N A2T26H160-24S J u n e. 2 0 1 4 Freescale and the Freescale logo are trademarks of Freescale Semiconductor,
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
GPS Low Noise Amplifier with Integrated Input/Output SAW Filters RF2818 GPS LOW NOISE AMPLIFIER WITH INTEGRATED INPUT/OUTPUT SAW FILTERS Package: Module, 3.0mmx2.5mmx1.0mm Features Compact Footprint: 3.0mmx2.5mmx1.0mm
More informationGain and Return Loss vs Frequency. s22. Frequency (GHz)
SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description RFMD s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
More informationRF3375 GENERAL PURPOSE AMPLIFIER
Basestation Applications Broadband, Low-Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications RF3375General Purpose
More informationRecent Advances in Power Encoding and GaN Switching Technologies for Digital Transmitters
MITSUBISHI ELECTRIC RESEARCH LABORATORIES http://www.merl.com Recent Advances in Power Encoding and GaN Switching Technologies for Digital Transmitters Ma, R. TR2015-131 December 2015 Abstract Green and
More informationRF & Microwave Amplifiers to 20GHz
RF & Microwave Amplifiers to 20GHz Short form Catalog EuMW 2013 Low-Noise & Small Signal Power Amplifiers High Energy Physics Wideband GaN ECM Digital TV IMD Testing General Purpose Wideband Particle Physics,
More informationRF Discrete Devices Designer Kit
RF Discrete Devices Designer Kit The Easier, Faster Way to Design Quality RF Solutions Skyworks Solutions is committed to making your RF designs easier than ever. This design kit includes 5-10 components
More informationRF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 3.3 to 3.8GHz Linear Power Amplifier RF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 24-Pin, 4 mm x 4 mm x 0.9 mm Features High Gain; 34dB Supports Low Gain Mode
More informationDESIGN OF HIGH POWER AND EFFICIENT RF LDMOS PA FOR ISM APPLICATIONS
DESIGN OF HIGH POWER AND EFFICIENT RF LDMOS PA FOR ISM APPLICATIONS Farhat Abbas and John Gajadharsing NXP Semiconductors Nijmegen, The Netherlands Farhat.abbas@nxp.com Very high performance in power and
More informationLinearization of Three-Stage Doherty Amplifier
Linearization of Three-Stage Doherty Amplifier NATAŠA MALEŠ ILIĆ, ALEKSANDAR ATANASKOVIĆ, BRATISLAV MILOVANOVIĆ Faculty of Electronic Engineering University of Niš, Aleksandra Medvedeva 14, Niš Serbia
More information10W Ultra-Broadband Power Amplifier
(TH1B-01 ) 10W Ultra-Broadband Power Amplifier Amin K. Ezzeddine and Ho. C. Huang AMCOM Communications, Inc 401 Professional Drive, Gaithersburg, MD 20879, USA Tel: 301-353-8400 Email: amin@amcomusa.com
More informationFifth-generation (5G)
Raising the Levels of 5G Millimeter-Wave Signals Fifth-generation (5G) wireless network technology is being touted as the true next generation of wireless communications, capable of performance levels
More informationA New Topology of Load Network for Class F RF Power Amplifiers
A New Topology of Load Network for Class F RF Firas Mohammed Ali Al-Raie Electrical Engineering Department, University of Technology/Baghdad. Email: 30204@uotechnology.edu.iq Received on:12/1/2016 & Accepted
More informationThis article provides a new design configuration that uses the basic concept of the RFAL distortion cancellation technique.
Criss-Cross RFAL Cancels the IMD Distortion in Amplifiers. Author: Ray Gutierrez, Micronda LLC. This article provides a new design configuration that uses the basic concept of the RFAL distortion cancellation
More informationDesign of Broadband Three-way Sequential Power Amplifiers
MITSUBISHI ELECTRIC RESEARCH LABORATORIES http://www.merl.com Design of Broadband Three-way Sequential Power Amplifiers Ma, R.; Shao, J.; Shinjo, S.; Teo, K.H. TR2016-110 August 2016 Abstract In this paper,
More informationISSCC 2006 / SESSION 11 / RF BUILDING BLOCKS AND PLLS / 11.9
ISSCC 2006 / SESSION 11 / RF BUILDING BLOCKS AND PLLS / 11.9 11.9 A Single-Chip Linear CMOS Power Amplifier for 2.4 GHz WLAN Jongchan Kang 1, Ali Hajimiri 2, Bumman Kim 1 1 Pohang University of Science
More informationIn modern wireless. A High-Efficiency Transmission-Line GaN HEMT Class E Power Amplifier CLASS E AMPLIFIER. design of a Class E wireless
CASS E AMPIFIER From December 009 High Frequency Electronics Copyright 009 Summit Technical Media, C A High-Efficiency Transmission-ine GaN HEMT Class E Power Amplifier By Andrei Grebennikov Bell abs Ireland
More informationConcurrent Multi-Band Envelope Tracking Power Amplifiers for Emerging Wireless Communications
Concurrent Multi-Band Envelope Tracking Power Amplifiers for Emerging Wireless Communications by Hassan Sarbishaei A thesis presented to the University of Waterloo in fulfillment of the thesis requirement
More informationRF1136 BROADBAND LOW POWER SP3T SWITCH
BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 db PCS Band 0.30 db High Isolation:
More informationSubminiature, Low power DACs Address High Channel Density Transmitter Systems
Subminiature, Low power DACs Address High Channel Density Transmitter Systems By: Analog Devices, Inc. (ADI) Daniel E. Fague, Applications Engineering Manager, High Speed Digital to Analog Converters Group
More information6-18 GHz MMIC Drive and Power Amplifiers
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.2, NO. 2, JUNE, 02 125 6-18 GHz MMIC Drive and Power Amplifiers Hong-Teuk Kim, Moon-Suk Jeon, Ki-Woong Chung, and Youngwoo Kwon Abstract This paper
More informationPart BANDWIDTH Frequency Gain P1dB OIP3 NF Vcc Vd Id Package
Gain Block Amplifier Low Noise Amplifier GaAs p-hemt LNA Single 3V Supply Voltage Lead-free / Green Mobile Infrastructure PCS / CDMA / WCDMA WiBro / LTE W-LAN / ISM RFID / Fixed Wireless DFN 8L SOT-363
More informationRF1226 BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH
BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH Package Style: QFN, 12-pin, 2.0 mm x 2.0 mm x 0.55 mm Features Broadband Performance Low Frequency to 3.5 GHz Very Low Insertion Loss 0.25 db Typ at 0.90
More informationSwitch-Mode RF PAs Using Chireix Outphasing
Switch-Mode RF PAs Using Chireix Outphasing (Simplified Theory and Practical Application Notes by Robin Wesson, Base Station System Architect, RF Power Innovation, NXP Semiconductors Mark van der Heijden,
More informationPERFORMANCE TO NEW THRESHOLDS
10 ELEVATING RADIO ABSTRACT The advancing Wi-Fi and 3GPP specifications are putting pressure on power amplifier designs and other RF components. Na ose i s Linearization and Characterization Technologies
More informationGaN MMIC PAs for MMW Applicaitons
GaN MMIC PAs for MMW Applicaitons Miroslav Micovic HRL Laboratories LLC, 311 Malibu Canyon Road, Malibu, CA 9265, U. S. A. mmicovic@hrl.com Motivation for High Frequency Power sources 6 GHz 11 GHz Frequency
More informationDesign Of A Power Amplifier Based On Si-LDMOS For WiMAX At 3.5GHz
ITB Department University Of GävleG Sweden Design Of A Power Amplifier Based On Si-LDMOS For WiMAX At 3.5GHz CHARLES NADER June 2006 Master s s Thesis in Electronics/Telecommunication Supervisor: Prof.
More informationDesign and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology
Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Renbin Dai, and Rana Arslan Ali Khan Abstract The design of Class A and Class AB 2-stage X band Power Amplifier is described in
More informationAdvances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells
Freescale Semiconductor White Paper AIRFASTWBFWP Rev. 0, 5/2015 Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells By: Margaret Szymanowski and Suhail
More information11:20-13:00 Lunch 14:20-16:00. WS-01 GaN HEMT Characterization and Modeling for micro- and mm-wave Power Amplifier Applications
CONFERENCE WORKSHOPS SESSIONS AND SHORT MATRIX COURSES - SUNDAY 09:00-10:40 11:20-13:00 Lunch 14:20-16:00 16:40-18:20 WS-01 GaN HEMT Characterization and Modeling for micro- and mm-wave Power Amplifier
More informationRF3857 DUAL CHANNEL LNA WITH BYPASS MODE
DUAL CHANNEL LNA WITH BYPASS MODE Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Low Insertion Loss Bypass Feature 1.8V to 4V
More informationDevelopment of Gallium Nitride High Electron Mobility Transistors for Cellular Base Stations
ELECTRONICS Development of Gallium Nitride High Electron Mobility Transistors for Cellular Base Stations Kazutaka INOUE*, Seigo SANO, Yasunori TATENO, Fumikazu YAMAKI, Kaname EBIHARA, Norihiko UI, Akihiro
More information60 W, DC MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications. = 25 C) of Demonstration Amplifier
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic
More informationUNDERSTANDING THE 3 LEVEL DOHERTY
UNDERSTANDING THE 3 LEVEL DOHERTY Dr Michael Roberts info@slipstream-design.co.uk The Doherty amplifier is a well-known technique for improving efficiency of a power amplifier in a backed off condition.
More informationIntroduction to Envelope Tracking. G J Wimpenny Snr Director Technology, Qualcomm UK Ltd
Introduction to Envelope Tracking G J Wimpenny Snr Director Technology, Qualcomm UK Ltd Envelope Tracking Historical Context EER first proposed by Leonard Kahn in 1952 to improve efficiency of SSB transmitters
More informationA highly efficient 3.5 GHz inverse class-f GaN HEMT power amplifier
International Journal of Microwave and Wireless Technologies, 2010, 2(3-4), 317 324. # Cambridge University Press and the European Microwave Association, 2010 doi:10.1017/s1759078710000395 A highly efficient
More informationLECTURE 6 BROAD-BAND AMPLIFIERS
ECEN 54, Spring 18 Active Microwave Circuits Zoya Popovic, University of Colorado, Boulder LECTURE 6 BROAD-BAND AMPLIFIERS The challenge in designing a broadband microwave amplifier is the fact that the
More informationRF CMOS Power Amplifiers for Mobile Terminals
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.9, NO.4, DECEMBER, 2009 257 RF CMOS Power Amplifiers for Mobile Terminals Ki Yong Son, Bonhoon Koo, Yumi Lee, Hongtak Lee, and Songcheol Hong Abstract
More informationWITH mobile communication technologies, such as longterm
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, VOL. 63, NO. 6, JUNE 206 533 A Two-Stage Broadband Fully Integrated CMOS Linear Power Amplifier for LTE Applications Kihyun Kim, Jaeyong Ko,
More informationDesign of a Broadband HEMT Mixer for UWB Applications
Indian Journal of Science and Technology, Vol 9(26), DOI: 10.17485/ijst/2016/v9i26/97253, July 2016 ISSN (Print) : 0974-6846 ISSN (Online) : 0974-5645 Design of a Broadband HEMT Mixer for UWB Applications
More informationSmall Cell, BTS PA Driver and Control and General-Purpose RF Products
Small Cell, BTS PA Driver and Control and General-Purpose RF Products FTF-NET-F0480 Mario Bokatius Product Line Manager M A Y. 2 0 1 4 TM External Use Agenda Freescale RF Introduction Cellular & Industrial
More informationDC~18GHz Wideband SPDT Switch Chengpeng Liu 1, a, Zhihua Huang 1,b
5th International Conference on Education, Management, Information and Medicine (EMIM 2015) DC~18GHz Wideband SPDT Switch Chengpeng Liu 1, a, Zhihua Huang 1,b 1 Sichuan Institute of Solid State Circuits,
More informationHigh Performance RF for the Most Demanding Applications
High Performance RF for the Most Demanding Applications Infrastructure, Broadcast, Mil/Aero, Satellite, ISM About NXP in High Performance RF Our History, People and Culture You may know NXP from our roots.
More informationA 2.4-GHz 24-dBm SOI CMOS Power Amplifier with Fully Integrated Output Balun and Switched Capacitors for Load Line Adaptation
A 2.4-GHz 24-dBm SOI CMOS Power Amplifier with Fully Integrated Output Balun and Switched Capacitors for Load Line Adaptation Francesco Carrara 1, Calogero D. Presti 2,1, Fausto Pappalardo 1, and Giuseppe
More informationRF Power matters in the wireless world
Wireless Japan 2018 RF Power Innovative Integration www.innogration.net 1 One Stop RF Power Semiconductor Solution 2 Company Profile RF Power design and manufacturing house for semiconductor, device, module
More informationRF GaN Market. Applications, players, devices, and technologies
RF GaN Market Applications, players, devices, and technologies 2018 2023 RF GaN Market Sample www.yole.fr 2018 REPORT OBJECTIVES Provide an overview of the RF GaN market. Analyze different players in different
More informationWideband and High Efficiency Feed-Forward Linear Power Amplifier for Base Stations
Base Station Power Amplifier High Efficiency Wideband and High Efficiency Feed-Forward Linear Power Amplifier for Base Stations This paper presents a new feed-forward linear power amplifier configuration
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA6D Watt, MHz - 6 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA6D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
More informationDESIGNING AN OCTAVE-BANDWIDTH DOHERTY AM- PLIFIER USING A NOVEL POWER COMBINATION METHOD
Progress In Electromagnetics Research B, Vol. 56, 327 346, 2013 DESIGNING AN OCTAVE-BANDWIDTH DOHERTY AM- PLIFIER USING A NOVEL POWER COMBINATION METHOD Necip Sahan 1, * and Simsek Demir 2 1 Aselsan Inc.,
More informationRF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment
RF233 AMPLIFIER Typical Applications Broadband, Low Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low Power Applications Broadband Test Equipment Product Description
More informationRF1200 BROADBAND HIGH POWER SPDT SWITCH
BROADBAND HIGH POWER SPDT SWITCH Package Style: QFN, 6-pin, 2x2 Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage: 2.6V to 5.0V
More informationRF7234 3V TD-SCDMA/W-CDMA LINEAR PA MODULE BAND 1 AND 1880MHz TO 2025MHz
3V TD-SCDMA/W-CDMA LINEAR PA MODULE BAND 1 AND 1880MHz TO 2025MHz Package Style: Module, 10-Pin, 3mmx3mmx1.0mm Features TD-SCDMA and HSDPA Compliant Low Voltage Positive Bias Supply (3.4V to 4.2V) +28dBm
More informationRF Integrated Circuits
Introduction and Motivation RF Integrated Circuits The recent explosion in the radio frequency (RF) and wireless market has caught the semiconductor industry by surprise. The increasing demand for affordable
More informationCGHV60040D. 40 W, 6.0 GHz, GaN HEMT Die. Cellular Infrastructure Class AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms
Rev 1.1 March 2019 CGHV60040D 40 W, 6.0 GHz, GaN HEMT Die Cree s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium
More informationRF2418 LOW CURRENT LNA/MIXER
LOW CURRENT LNA/MIXER RoHS Compliant & Pb-Free Product Package Style: SOIC-14 Features Single 3V to 6.V Power Supply High Dynamic Range Low Current Drain High LO Isolation LNA Power Down Mode for Large
More information= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.
CGHV965F1 5 W, 7.9-9.6 GHz, 5-ohm, Input/Output Matched GaN HEMT Cree s CGHV965F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
More informationRF5623 SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 3.3 to 3.8 GHz Linear Power Amplifier SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features High Gain; 32dB 2.5% EVM (RMS) at 26dBm, 5.0V Integrated
More informationDesign of A Wideband Active Differential Balun by HMIC
Design of A Wideband Active Differential Balun by HMIC Chaoyi Li 1, a and Xiaofei Guo 2, b 1School of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China;
More informationDownloaded from edlib.asdf.res.in
ASDF India Proceedings of the Intl. Conf. on Innovative trends in Electronics Communication and Applications 2014 242 Design and Implementation of Ultrasonic Transducers Using HV Class-F Power Amplifier
More informationLDMOS MODELING AND HIGH EFFICIENCY POWER AMPLIFIER DESIGN USING PSO ALGORITHM
Progress In Electromagnetics Research M, Vol. 27, 219 229, 2012 LDMOS MODELING AND HIGH EFFICIENCY POWER AMPLIFIER DESIGN USING PSO ALGORITHM Mohammad Jahanbakht * and Mohammad T. Aghmyoni Department of
More informationParallel Doherty RF Power Amplifier. For WiMAX Applications. Sumit Bhardwaj
Parallel Doherty RF Power Amplifier For WiMAX Applications by Sumit Bhardwaj A Thesis Presented in Partial Fulfillment of the Requirements for the Degree Master of Science Approved November 2018 by the
More informationBand-Reconfigurable High-Efficiency Power Amplifier 900 MHz/1900 MHz Dual-Band PA Using MEMS Switches
NTT DoCoMo Technical Journal Vol. 7 No.1 Band-Reconfigurable High-Efficiency Power Amplifier 900 MHz/1900 MHz Dual-Band PA Using MEMS es Hiroshi Okazaki, Atsushi Fukuda and Shoichi Narahashi Band-free
More informationTypical IP3, P1dB, Gain. 850 MHz 1960 MHz 2140 MHz 2450 MHz
400 to ¼W Medium Power GaAs HBT Amplifier with Active Bias SXA-9(Z) 400 to ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description RFMD s SXA-9 amplifier is a high efficiency
More informationRFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER
Analog Controlled Variable Gain Amplifier RFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features 1425MHz to 1550MHz Operation Gain = 27dB Typical Gain Adjustment Range
More informationDESIGN OF LINEARITY IMPROVED ASYMMETRICAL GAN DOHERTY POWER AMPLIFIER USING COMPOS- ITE RIGHT/LEFT-HANDED TRANSMISSION LINES
Progress In Electromagnetics Research B, Vol. 53, 89 106, 2013 DESIGN OF LINEARITY IMPROVED ASYMMETRICAL GAN DOHERTY POWER AMPLIFIER USING COMPOS- ITE RIGHT/LEFT-HANDED TRANSMISSION LINES Yunxuan Feng
More informationLF to 4 GHz High Linearity Y-Mixer ADL5350
LF to GHz High Linearity Y-Mixer ADL535 FEATURES Broadband radio frequency (RF), intermediate frequency (IF), and local oscillator (LO) ports Conversion loss:. db Noise figure:.5 db High input IP3: 25
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA0060002D 2 Watt, MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
More informationA SWITCHED-CAPACITOR POWER AMPLIFIER FOR EER/POLAR TRANSMITTERS
A SWITCHED-CAPACITOR POWER AMPLIFIER FOR EER/POLAR TRANSMITTERS Sang-Min Yoo, Jeffrey Walling, Eum Chan Woo, David Allstot University of Washington, Seattle, WA Submission Highlight A fully-integrated
More informationA Product Development Flow for 5G/LTE Envelope Tracking Power Amplifiers, Part 2
Test & Measurement A Product Development Flow for 5G/LTE Envelope Tracking Power Amplifiers, Part 2 ET and DPD Enhance Efficiency and Linearity Figure 12: Simulated AM-AM and AM-PM response plots for a
More informationA 60-GHz Digitally-Controlled Phase Modulator with Phase Error Calibration
IEICE Society Conference A 60-GHz Digitally-Controlled Phase Modulator with Phase Error Calibration Rui WU, Ning Li, Kenichi Okada, and Akira Tokyo Institute of Technology Background 1 9-GHz unlicensed
More informationDesign and simulation of Parallel circuit class E Power amplifier
International Journal of scientific research and management (IJSRM) Volume 3 Issue 7 Pages 3270-3274 2015 \ Website: www.ijsrm.in ISSN (e): 2321-3418 Design and simulation of Parallel circuit class E Power
More information