RF Power matters in the wireless world
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- Damon Allison
- 5 years ago
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1 Wireless Japan 2018 RF Power Innovative Integration 1
2 One Stop RF Power Semiconductor Solution 2
3 Company Profile RF Power design and manufacturing house for semiconductor, device, module and sub-system GaN/LDMOS /GaAs/VDMOS technologies One stop RF Power house Focused on back end assembly quality management, with proven industrial experience and high yield volume record Broad product offerings: die, IPD, device, MMIC, MCM, imodule, custom design products Best in class time to market Timely application support
4 Core Market Wireless Access RF Energy - Macro cell Base station and RRU 4.5G/5G Massive MIMO MCM imodule, IC, Discrete - WIFI 2.4GHz /5.8GHz - Non-Cellular band mobile network 230MHz/350MHz/1.4GHz/1.8GHz - Magnetron replacement (Solid state heating, cooking, Defrost Plasma lighting) - Industrial (plasma generator, Plasma etcher) - Medical (MRI/Ablation/Skin Treatment/Diathermy) - Laser (Machining/Drilling/ Marking/ Cutting) - New energy Automobile - Synchrotron accelerator Multi Market - Broadband communication - TV Broadcast - Radio Station - Commercial Pulsed Radar - Navigation - Avionics 4
5 ST + Innogration LDMOS partnership STMicroelectronics Signs License and Cooperation Agreement on LDMOS Technology from Innogration Arrangement expands serviceable RF power market for ST Mature and proven technology is very well suited for applications such as wireless infrastructure; industrial, scientific, and medical; avionics and radar; and non-cellular radio Geneva / 14 Feb 2018 STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has signed an agreement on LDMOS [1] RF power technology from Innogration Technologies, a fabless semiconductor company headquartered in Suzhou, China, specializing in the design and manufacturing of RF power semiconductor devices, modules, and sub-system assemblies. Combining a short conduction-channel length with a high breakdown voltage, LDMOS devices are well suited for RF power amplifiers where they can be used in base stations for wireless communications systems, as well as in the power amplifiers for commercial and industrial systems. The agreement with Innogration expands the range of applications that ST can address with LDMOS technology. Terms of the agreements were not disclosed. 5
6 Manufacturing Facility Assembly Area 1000 M 2 Class Installed key hardware Die Attached Wire bonding DC Test station RF Test station Lid sealing ISO9000/ISO14000 certificated 6
7 Assembly Hardware 7
8 5G NR 8
9 Product selection guide for Sub-6GHz 5G NR Category Packaged MCM Availability Band (GHz) Part type Status Package or Size Power Supply (V) Psat (dbm) Pavg (W) (%) Power Gain(dB) Now GMAH Limited sampling 10*6mm 28 > Now GMAH Limited sampling 10*6mm 28 > Q GMAH Development 10*6mm 28 > Now GTAH35015M2 Released MM Discrete Device Now GTAH35060GX Released GX Now GTAH35101A2 Released A Now GTAH58015GX Released GX Now GTAH58030GX Released GX Now GTAH58045GX Released GX Now GTAV30030E2 Sampling E Q GTAV38150A2 Development A2 50 >50 * RF performance typically case temperature Discrete Device Packaged MCM 9
10 5G NR MIMO Active Antenna demanding innovative MCM PA solutions World wide sub 6GHz spectrum allocation plan Core bands 3.4 to 3.8GHz 3.6 to 4.2GHz (Japan) 4.4 to 5.0GHz *All base station or RRU pictures are gotten from public info. For demonstration only Mainstream configuration 64TX Pavg=5W 10
11 Innogration Sub-6GHz Massive MIMO MCM PA 6*10mm package Drop in replacement cover full bands Thermally enhanced package design 3 variations (GMAH under development) Most Powerful! Full band! Highest Efficiency! Same size across types! GMAH GMAH Product Feature Product Feature GHz GHz Operating Drain Voltage: +28V (Up to 32V) Operating Drain Voltage: +28V (Up to 32V) 50 Ω Input / Output 50 Ω Input / Output Patented Integrated Doherty Final Stage Patented Integrated Doherty Final Stage Gain at 5W avg.: 28 db Gain at 5W avg.: 30 db Efficiency 5 W Pavg Efficiency > 5 W Pavg Linearity before and after DPD -30dBc/-50dBc Linearity before/after DPD -30dBc/-50dBc (100MHz 5C LTE signal) (100MHz 5C LTE signal) 4.8-5GHz, Asymmetric DPA, Efficiency 5 W GHz, Asymmetric DPA, Efficiency 5 W 11
12 2.45GHz RF Energy and ISM application 12
13 Product selection guide for 2.45GHz Category Availability Match to 50ohm Part type Status Package or Size Power Supply(V) Number of stages CW Power (W) Power Shielding Isolator Gain(dB) Connected Amplifier Now Yes IMPA Sampling 75*135mm Yes Yes Apr-18 Yes IMPA Development 40*55mm Yes Yes imodule (Chip on carrier) Now Yes IMIA Limited sampling <40*50mm No No May-18 Yes IMIA Development 60*60mm No No Discrete Device (GaN or LDMOS) Now No GTAV25180A2 Sampling A N/A N/A Now No GTAV25100E2 Sampling E N/A N/A Now No GTAV30030E2 Sampling E N/A N/A Now No ITCH25350D4 Released D N/A N/A Now No ITCH25280D4 Released D N/A N/A Now No ITCH25180B2 Released B N/A N/A Now No ITCH27015E2 Released E N/A N/A * RF performance typically specified at 2450MHz and 25 case temperature Discrete Device imodule Connected Amplifier 13
14 IMPA in details All inhouse technologies including GaN/LDMOS/GaAs Cost Effective Secure supply chain RF Performance summary for 3 DUT Condition: 10 seconds after power/rf on CW Test Water cooling No. Pin(dBm) Pout(dBm) Pout(W) IDS(A) GP(dB) EFF(%) % % % 14
15 IMPA operation under water cooling and mismatch test Load open for 1 Minute: Survived! 15
16 433MHz/40.68MHz RF Energy Defrost Application 16
17 40.68MHz by MX0560VPX Freq(MHz) Pin(dBm) Psat(dBm) Psat(W) IDS(A) Gain(dB) Eff(%) 40.68(36V) (42V) (50V)
18 433MHz by ITBH09200B2 Pin(dBm) Pout (W) IDS (A) VGS (V) VDS (V) IDQ (ma) Pout (dbm) Gain (db) Eff(%) % 18
19 Broadcast & ISM 19
20 Product selection guide for Sub-1GHz 50V LDMOS Part Number Package Frequency Band Application Pout(W) Voltage(V) Efficiency Pout Power Gain(dB) Condition MU1503V GX HF-1.5GHz General / / CW MX1506VP LBB HF-1.5GHz General / / CW MX1512VP LBB HF-1.5GHz General / / CW MU1014V GXB HF-1GHz General / / CW MX0160VPX LBB HF-0.2GHz General / / CW MQ011K1VPX D4E HF-0.2GHz General / / CW MX0560VPX LBB HF-0.6GHz General / / CW MQ051K1VPX D4E HF-0.5GHz General / / CW MQ081K0VP D4E GHz General / / Pulse MK1040VP B4E 0.5-1GHz General / / CW MQ1080VP D4E 0.5-1GHz General / / CW Application VHF/UHF TV FM Broadcasting UHF/VHF Commercial Radar ISM 20
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2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range
2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz Features Wideband Solid State Power Amplifier Gain: 37dB Typical Psat 35dBm Typical Electrical Specifications, TA = +25⁰C, Vcc = +12V. Parameter Min. Typ.
Features. = +25 C, Vdd = +10V, Idd = 350mA
Typical Applications The is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: +28 dbm High : 14 db High Output IP3: +41 dbm Single Supply: +V @ 3 ma Ohm
RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES
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17-35GHz MPA/Multiplier TGA4040SM
Not Recommended for New Designs Advance Product Information 17-35GHz MPA/Multiplier TriQuint Recommends the TGA43-SM or TGA431-SM be used for New Designs Key Features Product Description The TriQuint TG44SM
FP Description. Features. Applications. Packaging Information. 104W, 48V GaN HEMT D
FP48007104 104W, 48V GaN HEMT D Description The FP48007104 is a 104W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor
Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
2-22GHz LNA with AGC. GaAs Monolithic Microwave IC. Performance (db)
Performance (db) GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range
11-15 GHz 0.5 Watt Power Amplifier
11-15 GHz 0.5 Watt Power Amplifier Features Frequency Range : 11-15GHz 27.5 dbm output Psat 13 db Power gain 25% PAE High IP3 Input Return Loss > 11 db Output Return Loss > 6 db Dual bias operation No
5 6 GHz 10 Watt Power Amplifier
5 6 GHz 10 Watt Power Amplifier Features Frequency Range : 5 6GHz 40 dbm Output Power 18 db Power gain 30% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 7.5 db Dual bias operation No external
RF V TO 4.0V,915MHz Transmit/Receive
3.3V to 4.0V,9MHz Transmit/Receive Module RF639 3.3V TO 4.0V,9MHz Transmit/Receive Module Package: LGA, 8-Pin,.mm x.0mm Features Tx Output Power: dbm Separate 0 Tx/Rx Transceiver Interface Rx Insertion
MECGaNLNACX. C- to X-Band GaN HEMT Low Noise Amplifier. Main Features. Product Description. Typical Applications. Measured Data
Main Features Product Description MECGaNLNACX is a 0.25µm GaN HEMT Low Noise Amplifier designed and tested by MEC for C- to X-Band applications. In the frequency range from 5 GHz to 12 GHz MECGaNLNACX
QPA1003D. 1 8 GHz 10 W GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
Product Description Qorvo s is a wideband high power MMIC amplifier fabricated on Qorvo s production.15um GaN on SiC process (QGaN15). The operates from 1 8 GHz and typically provides W saturated output
CHA F RoHS COMPLIANT
Pout (dbm) & PAE(%) & Gain(dB) RoHS COMPLIANT GaAs Monolithic Microwave IC Description The is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically
MECXQMM-60W. 8.3 to 10.3 GHz GaN HEMT Power Amplifier
Pout (dbm), PAE(%) Functional Block Diagram Main Features 0.25µm GaN HEMT Technology 8.3 10.3 GHz full performances Frequency Range 60W Output Power @ Pin 40.5 dbm PAE > 33% @ Pin 40.5 dbm Linear Gain
GHz Low Noise Amplifier
8.0-12.0 GHz Low Noise Amplifier Features Frequency Range : 8.0-12.0 GHz Low Noise Figure < 1.7 db 26 db nominal gain 12 dbm P 1dB High IP3 Input Return Loss > 10 db Output Return Loss > 10 db DC decoupled
TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 3.7 GHz PSAT:.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db Bias:
PRELIMINARY DATASHEET
PRELIMINARY DATASHEET 8-12 GHz 41dBm Power Amplifier DESCRIPTION The is a high performance dual line-up 3 stages GaAs Power Amplifier MMIC designed to operate in the X band. The has an output power of
GaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM153040WM-BM-R AM153040WM-FM-R Aug 2010 Rev 0 DESCRIPTION AMCOM s is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET PHEMT MMIC power amplifier.
30W Solid State High Power Amplifier 2-6 GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units
7-3 RF-LAMBDA 30W Solid State High Power Amplifier 2-6 GHz Features Wideband Solid State Power Amplifier Psat: +45dBm Gain: 50dB Supply Voltage: +36V Electrical Specifications, T A = +25⁰C, Vcc = +36V
TD-SCDMA/TD-LTE RF PA Solutions
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CMD GHz GaN Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Ultra wideband performance Low noise figure High RF power survivablility Low current consumption Small die size Vdd Vgg2 RFOUT Description RFIN The CMD2 is a wideband
The X-Band HPA is two stage 9 ~ 10 GHz GaN MMIC power amplifier has a large signal gain of 15 db with a +45 dbm saturated output power
APA9D Features X-Band W High Amplifier 9 to GHz Frequency Range W Saturated Output db Small Signal 36% Typical Added Efficiency ChipDimensions2.8 3..1mm 3 V Supply voltage Description The X-Band HPA is
RF is Everywhere - Expanding Leadership in Wireless Applications
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VD1N, VD2N, VD3N are available externally but are internally interconnected
DESCRIPTION The is a high performance dual line-up 3 stages GaAs Power Amplifier MMIC designed to operate in the K band from 18 to 23 GHz. The has an output power of 31.2 dbm at the 1 db compression point