TD-SCDMA and TDD-LTE Solution
|
|
|
- Gavin Morrison
- 6 years ago
- Views:
Transcription
1 TD-SCDMA and TDD-LTE Solution FTF-NET-F0479 Song Di China RF Application Manager Laurence Li China RF Marketing M A Y TM External Use
2 Agenda TD-SCDMA and TDD-LTE Evolution Overview Solutions Recommendation Typical Performance Update External Use 1
3 Radio Frequency Why Customers Choose Us We pioneered RF technology and continue to be the leader with high-quality, high-performance products using the latest technologies Applications Market leadership / scale Best-in-class performance in linear efficiency, gain, bandwidth and power Fully optimized reference designs Long-term customer relationships Customers Wireless Network Infrastructure Macro, Metro & small cellular basestations Digital front end Broadcast, Industrial/Scientific/Medical UHF & VHF broadcast TV FM & shortwave radio CO 2 lasers, plasma generation, MRI Enterprise Access Points, Professional Mobile Radio Converged cellular / wifi Public safety, dispatch, transportation, marine Aerospace / Defense Radar Air traffic management Jammers Market Leadership #1 High Power RF Transistors for Wireless Infrastructure (1) Products Airfast RF Platform RF Power ICs External Use 2 Source: (1) ABI Research, December 2012
4 TD-SCDMA and TDD LTE evolution in China Since the beginning of TD-SCDMA deployment in CMCC, Phase 1~ 5 had been deployed till 2012 Phase 6~7 has been evolved into TD-LTE including frequency band F+A, D and E since 2013 Multiband and wide signal bandwidth are being used for high data traffic With three of China operators deploying TDD-LTE base station this year, especially from CMCC, TDD-LTE base station will be the significant part in 4G base station Whether it would last in following years or how it evolve in future? External Use 3
5 TDSCDMA F+A Solutions recommendation Application Band F+A Outdoor/Medium power 8*15W/20W Band F+A Indoor/High power 2*40W Driver AFT27S006N AFT27S010N Suggested Line Ups AFT20S015N/2*AFT27S006N Final MRF8P20140WHS AFT20P140-4WS 2*MRF8P20140WHS 2*AFT20P140-4WS 2.3/2.6GHz TD-LTE Solutions Application Band E (2.3GHz) Indoor/High Power 2*40W Band D (2.6GHz) Indoor/High Power 2*40W Band D (2.6GHz) Outdoor/Medium Power 8*10W/8*15W 2.6GHz Small Cells Low Power 5W Driver 2*AFT20S015N 2*AFT27S010N 2*AFT20S015N 2*AFT27S010N 2*AFT27S006N AFT20S010N AFT27S006N Suggested Line Ups Final AFT23H200-4S2L 2*AFT23S160WS/23S170S AFT26H200W03S AFT26H250-24S 2*AFT26H160 AFT26P100-4WS AFT26H160-4S4 AFT26HW050S External Use 4
6 Inter-modulation Distortion AFT20P140-4WS Main Solution For TDSCDMA Market High evbw inside to enable 160MHz VBW Support 145MHz SBW Cost effective with OMNI package OM-780 Package evbw Included Launch = March, 2013 Performance Overview: Frequency band: 1880MHz 2025MHz P3dB > 52.3dBm >17dB Drain 43.8dBm = 41% P out = 43.8 dbm, 1C W-CDMA, CCDF=0.01% Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) IM3-L IM3-U IM5-L IM5-U Inter-modulation Distortion vs. Tone Spacing Freescale Semiconductor Tone Spacing (MHz) External Use 5
7 Inter-modulation Distortion AFT26H160-4S4 High High Efficiency (HiP) Support 100MHz SBW Main Solution For TDD-LTE Market NI-880XS extra-lead Launch = May, 2013 Performance Overview: Frequency band: 2530MHz 2630MHz P3dB ~ 53.1dBm(VDD=28V), >16.1dB Efficiency@45.0dBm =42.4%~44.1% [*] VDD=28V, Idq=0.6A, Vpeak=0.7V Freq Pout Adj-L Adj-U PAR (MHz) (dbm) Eff (%) Id (A) C W-CDMA, CCDF=0.01% Inter-modulation Distortion vs. Tone Spacing IM3-L IM3-U IM5-L IM5-U IM7-L IM7-U Freescale Semiconductor Tone Spacing (MHz) External Use 6
8 Line-up Demo with Shield MMZ25332B+AFT20S015GN+AFT26H160-4S4 MMZ25332B AFT20S015GN AFT26H160-4S4 RN2 RCP250Q1P5 Rogers mil PCB HTD HYH103DZ0.0 Performance Overview: Frequency band: 2496 MHz 2690MHz P1dB ~ 51.6 dbm, P3dB ~ 52.8dBm > 52dB, Efficiency@44.5 dbm >35.5% Turn-key Solution Excellent performance 3-stage demo with compact size Shield and Isolator added Close to real application P out = 44.5 dbm, 1C W-CDMA, CCDF=0.01% Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) External Use 7
9 Inter-modulation Distortion AFT23H200-4S2L High power and efficiency Cost effective (one device solution) Performance Overview: Frequency band: 2300MHz 2400MHz P1dB > 55dBm,P3dB > 55.8dBm (30V) >15.4dB Drain 47.8dBm(8dB OBO)= 46~47% Vd = 30.0V, Idq=0.8A, Vpeak = 0.6 V Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) Inter-modulation Distortion & vs. Tone Spacing NI-1230 extra-lead Launch = March, IM3-L IM3-U IM5-L IM5-U IM7-L IM7-U Freescale Semiconductor Tone Spacing (MHz) External Use 8
10 IMD3, IMD5 and IMD7 AFT26HW050S The Highest 2.6GHz Efficiency in the Industry Compact Size Matching Performance Overview: Frequency band: 2620MHz 2690MHz P3dB ~ 48dBm(VDD=28), ~ 15.5dB Efficiency@ 8 db OBO > 48% P out = 40 dbm, 1C W-CDMA, CCDF=0.01% Freq Pout Adj-L Adj-U PAR (MHz) (dbm) Eff (%) NI-780 extra-lead Final Samples = Feb, 2013 Launch = March, IMD3, IMD5 and IMD7 vs. Tone Spcacing Freq (MHz) IMD3 _L IMD3 _U External Use 9
11 Inter-modulation Distortion AFT26P100-4WS evbw inside to enable 150MHz VBW Performance Overview: Frequency band: 2570MHz 2620MHz P1dB ~ 49.5dBm, P3dB ~ 51dBm(VDD=28), ~ 15.5dB Efficiency@42.8dBm (8 db OBO)>44% Efficiency@ 44dBm (7dB OBO) >47% Freq (MHz) Pout (dbm) Adj-L Adj-U Eff (%) Id (A) Inter-modulation Distortion & vs. Tone Spacing NI-780 Package evbw Included Launch = March, MHz VBW IM3-L IM3-U IM5-L IM5-U IM7-L IM7-U Freescale Semiconductor Tone Spacing (MHz) 12.4 External Use 10
12 Inter-modulation Distortion AFT26H200W03S evbw inside to enable 220MHz VBW Performance Overview: Frequency band: 2595MHz 2655MHz P1dB > 53dBm, P3dB > 54.5dBm(VDD=30V), > 15.0dB Drain 46.5dBm(8dB OBO)= 44% P out = 46.5 dbm, 1C W-CDMA, CCDF=0.01% Freq (MHz) Adj-L Adj-U PAR Eff (%) Inter-modulation Distortion & vs. Tone Spacing NI-1230 evbw Launch = June, IM3-L IM3-U IM5-L IM5-U IM7-L IM7-U Freescale Semiconductor Tone Spacing (MHz) External Use 11
13 Inter-modulation Distortion AFT26H250-24S High power Support 80MHz SBW Cost effective (one device solution) Performance Overview: Frequency band: 2620MHz 2690MHz P1dB > 53.5dBm, P3dB > 55dBm > 15.0dB Drain 47.5dBm(8dB OBO)= 41% ** All above performance is with circulator NI L2L Launch = Nov, Inter-modulation Distortion vs. Tone Spacing P out = 47.5 dbm, 1C W-CDMA, CCDF=0.01% Freq (MHz) Pout (dbm) Adj-L Adj-U Alt1-L Eff (%) IM3-L IM3-U -70 IM5-L IM5-U IM7-L IM7-U Freescale Semiconductor Tone Spacing (MHz) External Use 12
14 AFT27S006N Broadband High Low Cost MHz MHz MHz PLD1.5-W Final Sample= Aug, 2013 Launch = Sep, 2013 Across from720mhz to 2690MHz P-1>38dBm >19.5dB Vdd=28V, Idq=60mA Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) External Use 13
15 AFT27S010N Broadband High Low Cost Across from 720MHz to 2690MHz P-1>40dBm >18.5dB MHz PLD1.5-W Mature Sample= July, 2013 Launch = Dec, 2013 Vdd=28V, Idq=80mA Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) External Use 14
16 AFT20S015N Broadband High Low Cost Across from 1805MHz to 2690MHz P-3>42dBm >16dB with very excellent gain flatness Vdd=28V, Idq=120mA Freq (MHz) Pout (dbm) Adj-L Adj-U PAR Eff (%) TO Launch = April, External Use 15
17 RF Cellular 2.6GHz LTE Line-up 20W MHz PA Solution Pre-Driv er ADAM Driver Doherty Final MMZ25332B MMDS25254H AFT27S006N AFT26H160 2-stage driver amplifier 5V GaAs QFN 3x3 33 dbm peak power : 27 db Advanced Doherty Alignment Module 5V QFN 6x6 Doherty coupler together with digitally selectable phase shifters and step attenuators for improved Doherty performance Wideband transistor 28V LDMOS PLD-1.5W package 6W peak output power Average power of 28.8dBm : 21 db Drain Efficiency: 21% Asymmetric in-package Doherty device 28V LDMOS NI-880XS-4L4S package 160W peak power Average power of 32W : 15 db Drain Efficiency: 45.5% External Use 16
18 Designing with Freescale Tailored live, hands-on training in a city near you 2014 seminar topics include QorIQ product family update Kinetis K, L, E, V series MCU product training freescale.com/dwf External Use 17
19 Freescale Semiconductor, Inc. External Use
FDD Solution Overview Including Airfast Gen 2 Product Introduction
FDD Solution Overview Including Airfast Gen 2 Product Introduction FTF-NET-F0478 Suhail Agwani Product Line Manager, RF Cellular Products MAY.2014 TM External Use Agenda Freescale RF Introduction Airfast
Small Cell, BTS PA Driver and Control and General-Purpose RF Products
Small Cell, BTS PA Driver and Control and General-Purpose RF Products FTF-NET-F0480 Mario Bokatius Product Line Manager M A Y. 2 0 1 4 TM External Use Agenda Freescale RF Introduction Cellular & Industrial
Freescale RF Solutions
Freescale RF Solutions EUF-IND-T0977 Yan Vainter J A N. 2 0 1 5 TM External Use Freescale Overview 17,000 employees 2013 revenue $4.19b Headquartered in Austin, TX 5 Business Groups Microcontrollers Automotive
Announcing Second-Generation Airfast RF Power Solutions
Announcing Second-Generation Airfast RF Power Solutions A2T07D160W04S A2T07H310-24S A2I22D050N A2I25D012N A2T26H160-24S J u n e. 2 0 1 4 Freescale and the Freescale logo are trademarks of Freescale Semiconductor,
Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, ColdFire+, C- Ware, the Energy Efficient Solutions logo, Kinetis,
Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, ColdFire+, C- Ware, the Energy Efficient Solutions logo, Kinetis, mobilegt, PEG, PowerQUICC, Processor Expert, QorIQ, Qorivva,
RF is Everywhere - Expanding Leadership in Wireless Applications
RF is Everywhere - Expanding Leadership in Wireless Applications FTF-IND-F0112 Leonard Pelletier Applications Support A P R. 2 0 1 4 TM External Use Agenda Freescale RF Innovations Core Competencies Expanding
TD-SCDMA/TD-LTE RF PA Solutions
August, 2009 TD-SCDMA/TD-LTE RF PA Solutions Scott Li ( 李成进 ) Agenda TD-SCDMA system and PA specification introduction TD-SCDMA PA market trend Freescale TD-SCDMA roadmap and solutions Typical TD PA solution
Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells
Freescale Semiconductor White Paper AIRFASTWBFWP Rev. 0, 5/2015 Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells By: Margaret Szymanowski and Suhail
The Doherty Power Amplifier 1936 to the Present Day
TH1-E1 The Doherty Power Amplifier 1936 to the Present Day Ray Pengelly, Prism Consulting NC, LLC Hillsborough, NC 27278 USA 1 Summary Early History Broadcast Transmitters Handset Transmitters Cellular
RF Products. Selector Guide. freescale.com/rf
RF Products Selector Guide freescale.com/rf RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the largest provider of RF power solutions for more than 30
Freescale. RF Military Solutions. Worldwide leader in RF power the best choice for defense applications. Featuring New GaN Devices
Freescale RF Military Solutions Worldwide leader in RF power the best choice for defense applications Featuring New GaN Devices freescale.com/rfmilitary Worldwide Industry Leader Freescale s RF power transistor
RF Power matters in the wireless world
Wireless Japan 2018 RF Power Innovative Integration www.innogration.net 1 One Stop RF Power Semiconductor Solution 2 Company Profile RF Power design and manufacturing house for semiconductor, device, module
xbt The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Manufacturing Rugged, Wideband Performance Leading-edge RF
Infineon RF Power LDMOS Product Roadmap June, 2012 The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Rugged, Wideband Performance Manufacturing xbt Leading-edge RF Performance Highest
RF Solutions for Commercial Aerospace
RF Solutions for Commercial Aerospace freescale.com/rf RF Performance Freescale has developed an advanced portfolio of RF power solutions for use in avionics systems, L-Band radars and S-Band radars. Our
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data Document Number: AFT2S15N Rev. 1, 11/213 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: A2V09H300--04N Rev. 0, 2/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 79 W asymmetrical Doherty RF power LDMOS
LDMOS RF Power Transistor HTN7G21P160H. 1. Features. 2. Applications. 3. Items for Ordering. Package:H2110S-6L. Pin Connections
LDMOS RF Power Transistor 1. Features Advanced High Performance In-Package Doherty Grater Negative Gate-Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction
AH102. Product Description. Functional Diagram. Product Features. Typical Parameters. Specifications. Absolute Maximum Ratings. Ordering Information
Medium Power, High Linearity Amplifier The Communications Edge Product Features - MHz Bandwidth +45 dbm Output IP3 13 db Gain +27 dbm P1dB MTBF > 7 Hours Internally Matched Multiple Bias Voltages (+7.
Test Methodology. Characteristic Symbol Min Typ Max Unit. V GS(th) Vdc. V GS(Q) Vdc. V DS(on)
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from185 MHz to 1995 MHz.
DESIGN OF AN S-BAND TWO-WAY INVERTED ASYM- METRICAL DOHERTY POWER AMPLIFIER FOR LONG TERM EVOLUTION APPLICATIONS
Progress In Electromagnetics Research Letters, Vol. 39, 73 80, 2013 DESIGN OF AN S-BAND TWO-WAY INVERTED ASYM- METRICAL DOHERTY POWER AMPLIFIER FOR LONG TERM EVOLUTION APPLICATIONS Hai-Jin Zhou * and Hua
RFPA2013 Application Note
AN RFMD APPLICATION NOTE RFPA1 Application Note Product Description The RFPA1 is a.w QFN package power amplifier specifically designed for Wireless Infrastructure applications. The RFPA1 is a single-stage
RF Power GaN Transistor
Freescale Semiconductor Technical Data Document Number: A2G35S2--1S Rev., 5/216 RF Power GaN Transistor This 4 W RF power GaN transistor is designed for cellular base station applications requiring very
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: AFT3H16--5S Rev., 11/15 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 3 W asymmetrical Doherty RF power LDMOS transistor
RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES
RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES APRIL 2016 NXP RF Military Overview NXP RF (formerly Freescale) is #1 in RF power for cellular infrastructure* Strong
4W CW, MHz Power Transistor
4W CW, 30-2700 Power Transistor FEATURES Frequency: 30-2700 Gain @ 900Mhz: 16.5dB Psat @ 900: 37dBm PAE @ Psat: 47% @ 900 15-28V Operation DESCRIPTION The is a broadband capable 4W GaN on Silicon power
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: AFT26H160S4 Rev. 1, 11/2013 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 32 W asymmetrical Doherty RF power LDMOS transistor
Product Data Sheet Rev. 2.2, 12/2017
LDMOS RF Power Transistor 1. Features HTN7G27S0P High Efficiency High Power Gain Integrated ESD Protection Excellent Ruggedness Excellent Thermal Stability 2. Applications CDMA W-CDMA GSM EDGE MC-GSM LTE
The following part numbers from this appnote are not recommended for new design. Please call sales
California Eastern Laboratories APPLICATION NOTE AN1038 A 70-W S-Band Amplifier For MMDS & Wireless Data/Internet Applications Shansong Song and Raymond Basset California Eastern Laboratories, Inc 4590
RF Power GaN Transistor
Technical Data Document Number: A2G26H281--04S Rev. 0, 9/2016 RF Power GaN Transistor This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring
12.5W CW, MHz Power Transistor
Preliminary Specification 12.5W CW, 2-3MHz Power Transistor FEATURES Frequency: 2-3MHz Gain @ 8Mhz: 17dB Psat @ 8MHz: 42dBm PAE @ Psat: 52% @ 8MHz 28V Operation DESCRIPTION The is a broadband capable 12.5W
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ9332B is a 2--stage, high linearity InGaP HBT broadband amplifier
Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
65 V LDMOS INTRODUCTION
65 V LDMOS INTRODUCTION Introduction NXP is announcing a new LDMOS technology using 65 V drain voltage, focused on ease of use. Higher voltage enables a higher RF output power with no compromise. The first
MMA C3 6-22GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vdd=5V P3dB: 19.5 dbm @Vdd=5V Gain: 14 db Vdd =3 to 6 V Ids = 130 ma Input and Output Fully Matched to 50 Ω Applications: Communication systems Microwave
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data Document Number: A3T21H456W23S Rev. 1, 08/2018 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 87 W asymmetrical Doherty RF power LDMOS transistor is designed
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 75 to
MAMF Dual Channel SW/LNA Module for 5G M-MIMO
MAMF-011069 Dual Channel SW/LNA Module for 5G M-MIMO Features > Covers 1.9 3.9 GHz > Dual Channel architecture - 2 x 2-Stage Low Noise Amplifiers - S2 x High power (20W CW) switches > 31 db Gain > 1.5
Figure 4. MMG15241H Driving MD7IC2250N Board Layout. Table 1. MMG15241H Driving MD7IC2250N Test Circuit Component Designations and Values
Freescale Semiconductor Technical Data RF Power Reference Design RF Power Amplifier Lineup GaAs E--pHEMT Driving RF LDMOS Amplifier Lineup Characteristics This reference design provides a prepared high-gain
RF LDMOS Wideband Integrated Power Amplifier
Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC22N wideband integrated circuit is designed with on--chip matching that makes it usable from 185 to 217 MHz.
Advanced Technologies B.U. RF Power Presentation
Advanced Technologies B.U. RF Power Presentation Front-End & Back-end Overview 4 Catania Italy ISO9001/14001/16949 & EMAS certifications 6 high volume wafer fabs - Class 10 & 100 Product Management, Marketing,
This article provides a new design configuration that uses the basic concept of the RFAL distortion cancellation technique.
Criss-Cross RFAL Cancels the IMD Distortion in Amplifiers. Author: Ray Gutierrez, Micronda LLC. This article provides a new design configuration that uses the basic concept of the RFAL distortion cancellation
ARFTG Workshop, Boulder, December 2014
ARFTG Workshop, Boulder, December 2014 Design and measurements of high-efficiency PAs with high PAR signals Zoya Popovic, Tibault Reveyrand, David Sardin, Mike Litchfield, Scott Schafer, Andrew Zai Department
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data Document Number: A3T21H400W23S Rev. 0, 06/2018 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 71 W asymmetrical Doherty RF power LDMOS transistor is designed
Introducing the High Voltage Vertical Technology for High Power Applications
Introducing the High Voltage Vertical Technology for High Power Applications Brian D. Battaglia Applications Engineering HVVi Semiconductors Phoenix, AZ Page 1 AGENDA Background Device Overview Packaging
RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs
Freescale Semiconductor Technical Data Document Number: AFT9H3 3S Rev., 9/23 RF ower LDMOS Transistors N Channel nhancement Mode Lateral MOSFTs These 56 watt asymmetrical Doherty RF power LDMOS transistors
AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R
AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R DESCRIPTION AMCOM s is an ultra-broadband GaAs MMIC power amplifier. It has 22 db gain and 36dBm output power over the 0.01 to 3.5 GHz band. This MMIC is
10W Ultra-Broadband Power Amplifier
(TH1B-01 ) 10W Ultra-Broadband Power Amplifier Amin K. Ezzeddine and Ho. C. Huang AMCOM Communications, Inc 401 Professional Drive, Gaithersburg, MD 20879, USA Tel: 301-353-8400 Email: amin@amcomusa.com
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: A2T18H16--24S Rev., 11/215 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 28 W asymmetrical Doherty RF power LDMOS transistor
MMA GHz 1W Traveling Wave Amplifier Data Sheet
Features: Frequency Range:.1 2 GHz P3dB: +29 dbm Gain: 12.5 db Vdd =12 V Ids =5 ma Input and Output Fully Matched to 5 Ω Applications: Fiber optics communication systems Microwave and wireless communication
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: A2T2S6--2S Rev., 8/25 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 38 W RF power LDMOS transistor is designed for cellular
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 50 W RF power LDMOS transistors are designed
Freescale Airfast Mobile Radio
Freescale Airfast Mobile Radio Announcing: AFT05MS006N Previously Announced: AFT09MS007N AFT09MS015N AFT05MS031N AFT09MS031N AFT09MP055N AFT05MP075N TM M a r c h. 2 0 1 4 Freescale and the Freescale logo
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data Document Number: A2T27S2N Rev. 1, 1/218 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 2.5 W RF power LDMOS transistors are designed for cellular base station
Characteristic Symbol Value (2,3) Unit. Test Methodology
Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on--chip matching that makes it usable from 2110--2170 MHz.
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data Document Number: AFT7SN Rev. 5, /17 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This. dbm RF power LDMOS transistor is designed for cellular base station applications
MMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012
Features: Frequency Range: 30KHz 40 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 13.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω In 4x4mm QFN package Applications: Fiber optics communication
Ceramic Packaged GaAs Power phemt DC-10 GHz
Ceramic Packaged GaAs Power phemt DC- GHz DESCRIPTION AMCOM s is part of the BI series of GaAs phemts. This part has a total gate width of 6mm. The is designed for high power microwave applications, operating
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data Document Number: AFT26HW5S Rev. 2, 7/213 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 9 watt asymmetrical Doherty RF power LDMOS transistors
MMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
UNDERSTANDING THE 3 LEVEL DOHERTY
UNDERSTANDING THE 3 LEVEL DOHERTY Dr Michael Roberts info@slipstream-design.co.uk The Doherty amplifier is a well-known technique for improving efficiency of a power amplifier in a backed off condition.
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data Document Number: AFT21H35W3S Rev., 9/213 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 63 watt asymmetrical Doherty RF power LDMOS transistors
RF Power GaN Transistor
Technical Data Document Number: A3G35H100--04S Rev. 0, 05/2018 RF Power GaN Transistor This 14 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring
2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT
Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver and pre--driver applications for macro
***note: pallet may draw up to 5.0 amps on a 32V supply.
Model BCI-UHF-40TX12 TV Pallet Amplifier Module This amplifier module is ideal for final output stages in analog and digital TV broadcast equipment. 470 860MHz 28-32 Volts Pout: 25W Peak Sync. 10Watts
Microwave / Millimeter Wave Products
Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s. c
Title: New High Efficiency Intermodulation Cancellation Technique for Single Stage Amplifiers.
Title: New High Efficiency Intermodulation Cancellation Technique for Single Stage Amplifiers. By: Ray Gutierrez Micronda LLC email: ray@micronda.com February 12, 2008. Introduction: This article provides
AM003536WM-BM-R AM003536WM-FM-R
AM0036WM-BM-R AM0036WM-FM-R DESCRIPTION AMCOM s is an ultra broadband GaAs MMIC power amplifier. It has 23 db gain, and 36 dbm output power over the 0.01 to 3.5 GHz band. This MMIC is in a ceramic package
AGR09085E 85 W, 865 MHz 895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: A2T26H300--24S Rev. 0, 9/2015 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 60 W asymmetrical Doherty RF power LDMOS transistor
RF LDMOS Wideband Integrated Power Amplifier
Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MMRF2004NB wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 to 2700
LDMOS FIELD EFFECT TRANSISTOR NEM091803S-28
DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM091803S-28 N-CHANNEL SILICON POWER LDMOS FET FOR 180 W UHF-BAND PUSH-PULL POWER AMPLIFIER DESCRIPTION The NEM091803S-28 is an N-channel enhancement-mode lateral
Enhancement Mode phemt
Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT--89 standard
Bridging the Gap between System & Circuit Designers
Bridging the Gap between System & Circuit Designers October 27, 2004 Presented by: Kal Kalbasi Q & A Marc Petersen Copyright 2003 Agilent Technologies, Inc. The Gap System Communication System Design System
Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 39 ma Operational Voltage
60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = db at 2GHz
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: A2T18H410--24S Rev. 0, 5/2015 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 71 W asymmetrical Doherty RF power LDMOS transistor
GaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM1327MM-BM-R AM1327MM-FM-R Aug 2010 Rev 2 DESCRIPTION AMCOM s is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 211 to 217 MHz. Can be used in
Application Note No. 067
Application Note, Rev. 2.0, Dec. 2007 Application Note No. 067 General Purpose Wide Band Driver Amplifier using BGA614 RF & Protection Devices Edition 2007-01-04 Published by Infineon Technologies AG 81726
Ceramic Packaged GaAs Power phemt DC-12 GHz
Ceramic Packaged GaAs Power phemt DC-12 GHz DESCRIPTION AMCOM s is a discrete GaAs phemt that has a total gate width of 1.mm. It is in a ceramic BH package for operating up to 12 GHz. The BH package has
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA312BV is a 2--stage high efficiency, Class AB InGaP HBT amplifier
Stephen Plumb National Instruments
RF and Microwave Test and Design Roadshow Cape Town and Midrand October 2014 Stephen Plumb National Instruments Our Mission We equip engineers and scientists with tools that accelerate productivity, innovation,
2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT
Freescale Semiconductor Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3--stage power amplifier targeted at driver and pre--driver
WPS GHz Linear Power Amplifier Data Sheet
Features 15.0 db Gain 36 dbm P1dB 48 dbm IP3 EVM < 2.5% at 29 dbm Pout Applications 802.16 WiMax 802.11 WLAN Wireless Communications Telecomm Infrastructure Prematch for Easy Cascade Pb Free Surface Mount
DATA SHEET N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER
DATA SHEET LDMOS FIELD EFFECT TRANSISTOR N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The is an N-channel enhancement-mode lateral diffused MOS FET designed
TRANSCOM Manufacturing & Education. Transcom Instruments. Product Brochure TRANSCOM INSTRUMENTS. Product Brochure.
TRANSCOM INSTRUMENTS Product Brochure Transcom Instruments Product Brochure www.transcomwireless.com 1 Vector Signal Generator Overview Vector Signal Generator is a high performance vector signal generator.
Today s wireless system
From May 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High-Power, High-Efficiency GaN HEMT Power Amplifiers for 4G Applications By Simon Wood, Ray Pengelly, Don Farrell, and
Application Note 5303
MGA-6P8 9 MHz low noise amplifier using MGA-6P8 Application Note 5 Introduction The MGA-6P8 is a GaAs EPHEMT with an integrated active bias. The target applications are Tower Mounted Amplifier / Main LNA
MGA-632P8 1.9 GHz low noise amplifier Application Note 5295
MGA-63P8 1.9 GHz low noise amplifier Application Note 595 Introduction The MGA-63P8 is a GaAs EPHEMT LNA with integrated active bias. The target applications are Tower Mounted Amplifiers and LNAs in cellular
Heterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier
Technical Data Heterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier The is a General Purpose Amplifier that is internally input and output prematched. It is designed for
Data Sheet. ALM GHz GHz 50 Watt High Power SPDT Switch with LNA Module. Features. Description. Specifications.
ALM-12124 1.88 GHz 2.025 GHz 50 Watt High Power SPDT Switch with LNA Module Data Sheet Description Avago Technologies ALM-12124 is a multi-chip integrated module that comprise of a 50 Watt CW high power
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier
RPAM0510A. 470 ~ 960 MHz Broadband Ultra Linear Power Amplifier 1. Absolute Maximum Ratings 2 : Key Features: Electrical Specifications: (at +25 o C)
47 ~ 96 MHz Broadband Ultra Linear Power Amplifier 1 RPAM51A is a broadband, high power, and high linearity amplifier. The amplifier offers exceptional +. db gain flatness, 31 db gain, 35 dbm P1dB and
WPS GHz Linear Power Amplifier Data Sheet
Features 15.0 db Gain 36 dbm P1dB 48 dbm IP3 EVM < 2.5% at 29 dbm Pout Prematch for Easy Cascade Pb Free Surface Mount Pkg MTTF > 100 yrs @ T C 150 C Applications 802.16 WiMax 802.11 WLAN Wireless Communications
RF & Microwave Amplifiers to 20GHz
RF & Microwave Amplifiers to 20GHz Short form Catalog EuMW 2013 Low-Noise & Small Signal Power Amplifiers High Energy Physics Wideband GaN ECM Digital TV IMD Testing General Purpose Wideband Particle Physics,
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ9312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: AFT2S240--2S Rev. 0, 4/204 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 55 W RF power LDMOS transistor is designed for
RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: AFT18S290 13S Rev. 0, 5/13 RF ower LDMOS Transistor N Channel nhancement Mode Lateral MOSFT This 63 watt RF power LDMOS transistor is designed for
0.5-20GHz Driver. GaAs Monolithic Microwave IC
CHA422-98F.-2GHz Driver GaAs Monolithic Microwave IC Description The CHA422-98F is a distributed driver amplifier which operates between. and 2GHz. It is designed for a wide range of applications, such
GaN HPA optimized for telecom - Linearity results & DPD assessment March 2017
GaN HPA optimized for telecom - Linearity results & DPD assessment March 2017 christophe.auvinet@ums-gaas.com GaN technology toward 5G 1. Toward 5G with GaN 2. AB class HPA optimization 3. Doherty linearity