Introduction of ADVANTEST EB Lithography System
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1 Introduction of ADVANTEST EB Lithography System Nanotechnology Business Division ADVANTEST Corporation 1
2 2
3 Node [nm] EB Lithography Products < ADVANTEST s Superiority > High Resolution :EB optical technology with Character Projection & VSB High Throughput :Shot Number reduction by CP Tech, and High Beam Density. High Availability :Self Cleaning technology with oxidized Gas New F F mm, 6~3in Wafer 300mm Wafer 300mm, 200mm. 6~3in Wafer F5113 F3000 F
4 Throughput F7000 Application Field ~100 wph ~1 wph * High Resolution 1Xnm GaAs LSI Middle Class LSI Solar HDD Device Head * High Throughput Optical Device Advanced Mask Advanced LSI Nano Imprint Resist MEMS(Product) * High Flexibility DSA ~0.01 wph MEMS (Research) * High Availability 95% Media (Research) Fine Pattern Fabri. ~65nm ~2Xnm 1Xnm~ Resolution 4
5 High Resolution 1Xnm Trend of line width is 2Xnm. 22nm ISO 22nm 1:2 FOV: 1400nm FOV: 1400nm 5
6 High Resolution 1Xnm 18nm ISO 18nm 1:2 FOV: 1400nm FOV: 1400nm 6
7 High Resolution 1Xnm 14nm ISO 14nm 1:2 High Resolution 1Xnm * High Throughput High Flexibility High Availability 95% FOV: 1400nm FOV: 1400nm 7
8 EB Exposure Method Comparison PB Point Beam VSB Variable Shaped Beam Electron Source CP Character Projection First Shaping Aperture Second Shaping Aperture : CP Mask Round Rectangle Arbitrary Shape 8
9 High Throughput Competitor - PB - - VSB - - CP Shots 20 Shots 1 Shots CP Exposure prints the pattern on the CP mask with high fidelity 9
10 Applications; Photonic crystal Complicated pattern can be exposed by 1 shot. Photonic Crystal Hole Array Photonic Crystal Triangle Matrix FOV: 1.5μm FOV: 2μm 10
11 Hole, Pillar, One-Shot CP Exposed pattern 40nm1:1 Hole-Array (pcar) 22nm CP Exposure CP-Pattern Data 22nm Pillar-Array (HSQ) 11
12 Applications; LSI Complicated pattern can be exposed by 1 shot. Metal-1 FOV: 4μm 12
13 Applications; MEMS and 3D-Structure 100nm Deep 15um FOV: 25um VDEC in Tokyo Univ. VDEC:VLSI Design and Education Center FOV: 600um 13
14 Applications; Smooth Photonics Device For good LER, curving edge is exposed by Round CP. Inner area is exposed by VSB. Our tool achieves high throughput ex) It needs less than 20 min, but competitor needs more than 1 day. 14
15 Performance Comparison Advantest E-Beam lithography tool realizes to fabricate a curve trajectory with high quality shape and faster writing time. Optical Waveguide Attenuation Ratio Writing Time ADVANTEST 1.7dB/cm 15 minutes High Resolution 1Xnm Competitors 3.0dB/cm 3600 minutes High Throughput Si Ring Resonator * High Flexibility High Availability 95% Cross-section Drawing of Si Waveguide (Reference : FUJITSU JOURNAL / JAN. 2012) 15
16 High Flexibility F7000 can support!! Wafer 300mm, 200mm 6inch~3inch High Resolution 1Xnm Si, III-V, etc. High Throughput Mask High Flexibility 6025 * High Availability 95% Quartz 16
17 High Availability Up-Time of Past 2year( ~ ) 100.0% 95% 80.0% 60.0% 40.0% 20.0% Preventive Maintenance 0.0% Up Time more than 95% 17
18 High Availability Contamination Free!! 1 In-situ Cleaning 2 Self Cleaning cleaning gas 380KHz 5~20W Applying RF to deflection electrode with cleaning gas Cleaning gas is applied 24h in a day. Exposure is NOT stopped in cleaning process. 18
19 Charge up drift length High Availability 4 1 [nm] 30 Deflection Field In-situ Cleaning 2 Self Cleaning time[month] time[month] No growth of charge up drift for more than 1 year 19
20 Writing Tool Mapping on the Market High Resolution PSB EB Writer CP EB Writer Low Throughput VSB EB Writer Laser Writer High Throughput Machining Tool Low Resolution 20
21 Thank you for your attention 21
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