EDC UNIT IV- Transistor and FET JFET Characteristics EDC Lesson 4- ", Raj Kamal, 1
|
|
|
- Brent Harvey
- 6 years ago
- Views:
Transcription
1 EDC UNIT IV- Transistor and FET Characteristics Lesson-10: JFET Characteristics Qualitative Discussion 2008 EDC Lesson 4- ", Raj Kamal, 1
2 n-junction FET and p-jfet Symbols D D + D G + V DS V DS V GS S + S V GS G 2008 EDC Lesson 4- ", Raj Kamal, 2
3 N channel JFET structure 2008 EDC Lesson 4- ", Raj Kamal, 3
4 Functioning of JFET The gate is connected to the source. Since the pn junction is reversebiased, little current will flow in the gate connection. The potential gradient established will form a depletion layer, where almost all the electrons present in the n-type channel will be swept away. The most depleted portion is in the high field between the G and the D, and the least-depleted area is between the G and the S EDC Lesson 4- ", Raj Kamal, 4
5 Case 1: V GS = 0 V and V DS some +ve value at Junction Field Effect Transistor (JFET) 2008 EDC Lesson 4- ", Raj Kamal, 5
6 JFET Functioning Because the flow of current along the channel from the (+ve) drain to the (-ve) source is really a flow of free electrons from S to D in the n-type Si, the magnitude of this current will fall as more Si becomes depleted of free electrons. There is a limit to the drain current (I D ) which increased V DS can drive through the channel. This limiting current is known as I DSS (Drain-to-Source current with the gate shorted to the source) EDC Lesson 4- ", Raj Kamal, 6
7 Output characteristics of an n-channel JFET with the gate short-circuited to the source V GS = EDC Lesson 4- ", Raj Kamal, 7
8 Output characteristics of an n-channel JFET with the gate short-circuited to the source The initial rise in I D is related to the buildup of the depletion layer as V DS increases. The curve approaches the level of the limiting current I DSS when I D begins to be pinched off. The physical meaning of this term leads to one definition of pinch-off voltage, V P, which is the value of V DS at which the maximum I DSS flows EDC Lesson 4- ", Raj Kamal, 8
9 2008 EDC Lesson 4- ", Raj Kamal, 9
10 Increasing V DS increases the widths of depletion layers, which penetrate more into channel and hence result in more channel narrowing toward the drain. The resistance of the n-channel, R AB therefore increases with V DS. The drain current: I DS = V DS /R AB 2008 EDC Lesson 4- ", Raj Kamal, 10
11 I D versus V DS exhibits a sublinear behavior, see figure for V DS < 5V. The pinch-off voltage, V P is the magnitude of reverse bias needed across the p + n junction to make them just touch at the drain end. Since actual bias voltage across p + n junction at drain end is V GD, the pinch-off occur whenever: V GD = V P EDC Lesson 4- ", Raj Kamal, 11
12 Beyond V DS = V P, there is a short pinch-off channel of length, l po. As V DS increases, most of additional voltage simply drops across l po as this region is depleted of carriers and hence highly resistive. Voltage drop across channel length, L ch remain as V P. Beyond pinch-off then I D = V P /R AP (V DS >V P ) EDC Lesson 4- ", Raj Kamal, 12
13 Case 2: V GS 0 V and V DS some +ve value at Junction Field Effect Transistor (JFET) 2008 EDC Lesson 4- ", Raj Kamal, 13
14 Output characteristics of an n-channel JFET With a steady gate-source voltage of 1 V There is always 1 V across the wall of the channel at the source end. A drain-source voltage of 1 V means that there will be 2 V across the wall at the drain end. The higher voltage difference at the drain end means that the electron channel is squeezed down a bit more at this end (reduced channel, higher resistance to current flow) 2008 EDC Lesson 4- ", Raj Kamal, 14
15 Output characteristics of an n-channel JFET With a steady gate-source voltage of 1 V 2008 EDC Lesson 4- ", Raj Kamal, 15
16 2008 EDC Lesson 4- ", Raj Kamal, 16
17 V GS GS = 0 V V DS > 5 V assuming V p = 5 V 2008 EDC Lesson 4- ", Raj Kamal, 17
18 Case 3:. V GS 0 V and V DS = 10 V value at Junction Field Effect Transistor (JFET) 2008 EDC Lesson 4- ", Raj Kamal, 18
19 Output characteristics of an n-channel JFET With a steady gate-source voltage and V DS of 10 V When the drain-source voltage is increased to 10V the voltage across the channel walls at the drain end increases to 11V, but remains just 1V at the source end. The field across the walls near the drain end is now a lot larger than at the source end. As a result the channel near the drain is squeezed down greatly. (higher resistance to current flow) 2008 EDC Lesson 4- ", Raj Kamal, 19
20 Output characteristics of an n-channel JFET With a steady gate-source voltage of 10 V 2008 EDC Lesson 4- ", Raj Kamal, 20
21 Case 4:.. V GS = 1 V and V DS = 20 V value at Junction Field Effect Transistor (JFET) 2008 EDC Lesson 4- ", Raj Kamal, 21
22 Output characteristics of an n-channel JFET With a steady gate-source voltage of 20 V When the drain-source voltage is increased to 20V the voltage across the channel walls at the drain end increases to 21V, but remains just 1V at the source end. The field across the walls near the drain end is now a very larger than at the source end. As a result the channel near the drain is squeezed down greatly (chocked),. I DS = I DSS 2008 EDC Lesson 4- ", Raj Kamal, 22
23 Output characteristics of an n-channel JFET With a steady gate-source voltage of 20 V 2008 EDC Lesson 4- ", Raj Kamal, 23
24 Case 5: V GS = 2 V and V DS = 20 V value at Junction Field Effect Transistor (JFET) 2008 EDC Lesson 4- ", Raj Kamal, 24
25 Let us see what happen when negative voltage, says V GS = 2V, is applied to gate with respect to source (with V DS =0). The p + n junction are now reverse biased from the start, the channel is narrower, and channel resistance is now larger than in the V GS = 0 case EDC Lesson 4- ", Raj Kamal, 25
26 2008 EDC Lesson 4- ", Raj Kamal, 26
27 The drain current at reverse bias G and S flows when a small V DS applied is now smaller than in V GS = 0 case EDC Lesson 4- ", Raj Kamal, 27
28 When V DS = 3V, V GD across p + n junction at drain end is 5V, which is V P, so channel becomes pinch-off. Beyond pinch-off, I D is nearly saturated just as in the V GS = 0 case. Pinch-off occurs at V DS = V DS(sat), V DS(sat) = V P +V GS, where V GS is ve voltage (reducing V P ). For V DS >V DS(sat), I D becomes nearly saturated at value as I DS EDC Lesson 4- ", Raj Kamal, 28
29 Beyond pinch-of, with ve V GS, I DS is Where R AP (V GS ) is the effective resistance of the conducting n-channel from A to P, which depends on channel thickness and hence V GS. When V GS = -V P = -5V with V DS = 0, the two depletion layers touch over the entire channel length and the whole channel is closed EDC Lesson 4- ", Raj Kamal, 29 The channel said to be off.
30 Case 6:. V GS = 5 V and V DS = 20 V value at Junction Field Effect Transistor (JFET) 2008 EDC Lesson 4- ", Raj Kamal, 30
31 Depletion region (region depleted of free carriers (electrons and holes) 2008 EDC Lesson 4- ", Raj Kamal, 31
32 JFET Transfer Characteristics 2008 EDC Lesson 4- ", Raj Kamal, 32
33 Output Characteristics 2008 EDC Lesson 4- ", Raj Kamal, 33
34 I-V characteristics 2008 EDC Lesson 4- ", Raj Kamal, 34
35 I-V characteristics 2008 EDC Lesson 4- ", Raj Kamal, 35
36 Summary 2008 EDC Lesson 4- ", Raj Kamal, 36
37 We learnt JFET Characteristics Qualitative Discussion When VGS = 0, ID changes nearly linearly till pinch-off voltage and depletion region near the drain almost closes the channel 2008 EDC Lesson 4- ", Raj Kamal, 37
38 2008 EDC Lesson 4- ", Raj Kamal, 38
39 We learnt When VGS = 0, ID changes nearly linearly till pinch-off voltage. After pinch-off voltage the drai-source current remains constant at IDSS. When VGS is ve (for n-jfet) at certain value of VGS, ID does not increase and is EDC Lesson 4- ", Raj Kamal, 39
40 Depletion region (region depleted of free carriers (electrons and holes) 2008 EDC Lesson 4- ", Raj Kamal, 40
41 End of Lesson EDC Lesson 4- ", Raj Kamal, 41
FET. Field Effect Transistors ELEKTRONIKA KONTROL. Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya. p + S n n-channel. Gate. Basic structure.
FET Field Effect Transistors ELEKTRONIKA KONTROL Basic structure Gate G Source S n n-channel Cross section p + p + p + G Depletion region Drain D Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya S Channel
EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1
EDC UNIT IV- Transistor and FET Characteristics Lesson-9: JFET and Construction of JFET 2008 EDC Lesson 9- ", Raj Kamal, 1 1. Transistor 2008 EDC Lesson 9- ", Raj Kamal, 2 Transistor Definition The transferred-resistance
I E I C since I B is very small
Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while
FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTORS Module 5 Introduction Symbol Features: 1. Voltage is applied across gate and source terminals. This voltage controls the drain current. Hence FET is a voltage controlled device.
Chapter 6: Field-Effect Transistors
Chapter 6: Field-Effect Transistors Islamic University of Gaza Dr. Talal Skaik MOSFETs MOSFETs have characteristics similar to JFETs and additional characteristics that make then very useful. There are
Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Junction Field-effect Transistors Dr. Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of the Precedent Lecture Explain the Operation Class A Power
UNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
Prof. Paolo Colantonio a.a
Prof. Paolo Colantonio a.a. 20 2 Field effect transistors (FETs) are probably the simplest form of transistor, widely used in both analogue and digital applications They are characterised by a very high
FET(Field Effect Transistor)
Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,
FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd
FET Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd FET (field-effect transistor) unipolar devices - unlike BJTs that use both electron and hole current, they operate only with one type
EE70 - Intro. Electronics
EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π
Lecture 14. Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1
Lecture 14 Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1 Outline Introduction to FET transistors Types of FET Transistors Junction Field Effect Transistor (JFET) Characteristics Construction
Lecture (03) The JFET
Lecture (03) The JFET By: Dr. Ahmed ElShafee ١ JFET Basic Structure Figure shows the basic structure of an n channel JFET (junction field effect transistor). Wire leads are connected to each end of the
Chapter 5: Field Effect Transistors
Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits
Chapter 8. Field Effect Transistor
Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There
Field - Effect Transistor
Page 1 of 6 Field - Effect Transistor Aim :- To draw and study the out put and transfer characteristics of the given FET and to determine its parameters. Apparatus :- FET, two variable power supplies,
CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)
CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) INTRODUCTION - FETs are voltage controlled devices as opposed to BJT which are current controlled. - There are two types of FETs. o Junction FET (JFET) o Metal
Lecture 17. Field Effect Transistor (FET) FET 1-1
Lecture 17 Field Effect Transistor (FET) FET 1-1 Outline ntroduction to FET transistors Comparison with BJT transistors FET Types Construction and Operation of FET Characteristics Of FET Examples FET 1-2
Three Terminal Devices
Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering
Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET).
Q. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Answer: N-Channel Junction Field Effect Transistor (JFET) Construction: Drain(D)
Field Effect Transistors
Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits
MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I
MEASUREMENT AND INSTRUMENTATION STUDY NOTES The MOSFET The MOSFET Metal Oxide FET UNIT-I As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available
(a) Current-controlled and (b) voltage-controlled amplifiers.
Fig. 6.1 (a) Current-controlled and (b) voltage-controlled amplifiers. Fig. 6.2 Drs. Ian Munro Ross (front) and G. C. Dacey jointly developed an experimental procedure for measuring the characteristics
PESIT Bangalore South Campus
INTERNAL ASSESSMENT TEST 2 Date : 19/09/2016 Max Marks: 40 Subject & Code : Analog and Digital Electronics (15CS32) Section: III A and B Name of faculty: Deepti.C Time : 8:30 am-10:00 am Note: Answer five
ITT Technical Institute. ET215 Devices 1. Unit 7 Chapter 4, Sections
ITT Technical Institute ET215 Devices 1 Unit 7 Chapter 4, Sections 4.1 4.3 Chapter 4 Section 4.1 Structure of Field-Effect Transistors Recall that the BJT is a current-controlling device; the field-effect
Electronic Circuits II - Revision
Electronic Circuits II - Revision -1 / 16 - T & F # 1 A bypass capacitor in a CE amplifier decreases the voltage gain. 2 If RC in a CE amplifier is increased, the voltage gain is reduced. 3 4 5 The load
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-7 High Frequency
IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)
ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) LONG QUESTIONS (10 MARKS) 1. Draw the construction diagram and explain the working of P-Channel JFET. Also draw the characteristics curve and transfer
UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.
UNIT-I FIELD EFFECT TRANSISTOR 1. Explain about the Field Effect Transistor and also mention types of FET s. The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS Most of the content is from the textbook: Electronic devices and circuit theory, Robert
COLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.
MOSFETS Although the base current in a transistor is usually small (< 0.1 ma), some input devices (e.g. a crystal microphone) may be limited in their output. In order to overcome this, a Field Effect Transistor
FIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET)
FIELD EFFECT TRANSISTOR (FET) The field-effect transistor (FET) is a three-terminal device used for a variety of applications that match, to a large extent, those of the BJT transistor. Although there
Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering
Summary Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET A/Lectr. Khalid Shakir Dept. Of Electrical Engineering College of Engineering Maysan University Page 1-21 Summary The MOSFET The metal oxide
Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.
Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the
Unit III FET and its Applications. 2 Marks Questions and Answers
Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric
8. Characteristics of Field Effect Transistor (MOSFET)
1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors
97.398*, Physical Electronics, Lecture 21. MOSFET Operation
97.398*, Physical Electronics, Lecture 21 MOSFET Operation Lecture Outline Last lecture examined the MOSFET structure and required processing steps Now move on to basic MOSFET operation, some of which
Lecture-45. MOS Field-Effect-Transistors Threshold voltage
Lecture-45 MOS Field-Effect-Transistors 7.4. Threshold voltage In this section we summarize the calculation of the threshold voltage and discuss the dependence of the threshold voltage on the bias applied
Radio Frequency Electronics
Radio Frequency Electronics Active Components II Harry Nyquist Born in 1889 in Sweden Received B.S. and M.S. from U. North Dakota Received Ph.D. from Yale Worked and Bell Laboratories for all of his career
THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs
Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 12 Lecture Title: Analog Circuits
Questions on JFET: 1) Which of the following component is a unipolar device?
Questions on JFET: 1) Which of the following component is a unipolar device? a) BJT b) FET c) DJT d) EFT 2) Current Conduction in FET takes place due e) Majority charge carriers only f) Minority charge
MODULE-2: Field Effect Transistors (FET)
FORMAT-1B Definition: MODULE-2: Field Effect Transistors (FET) FET is a three terminal electronic device used for variety of applications that match with BJT. In FET, an electric field is established by
EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices
EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
6. Field-Effect Transistor
6. Outline: Introduction to three types of FET: JFET MOSFET & CMOS MESFET Constructions, Characteristics & Transfer curves of: JFET & MOSFET Introduction The field-effect transistor (FET) is a threeterminal
IFB270 Advanced Electronic Circuits
IFB270 Advanced Electronic Circuits Chapter 9: FET amplifiers and switching circuits Prof. Manar Mohaisen Department of EEC Engineering Review of the Precedent Lecture Review of basic electronic devices
Lecture 3: Transistors
Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,
Lecture - 18 Transistors
Electronic Materials, Devices and Fabrication Dr. S. Prarasuraman Department of Metallurgical and Materials Engineering Indian Institute of Technology, Madras Lecture - 18 Transistors Last couple of classes
FIELD EFFECT TRANSISTORS MADE BY : GROUP (13)/PM
FIELD EFFECT TRANSISTORS MADE BY : GROUP (13)/PM THE FIELD EFFECT TRANSISTOR (FET) In 1945, Shockley had an idea for making a solid state device out of semiconductors. He reasoned that a strong electrical
Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1
Lecture 15 Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Outline MOSFET transistors Introduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Comparison between JFET and
Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
Microelectronic Circuits Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 1 MOSFET Construction MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 2
ET Training. Electronics: JFET Instructor: H.Pham. The JUNCTION FIELF EFFECT TRANSISTOR (JFET) n channel JFET p channel JFET
The JUNCTION FIELF EFFECT TRANSISTOR (JFET) n channel JFET p channel JFET 1 The BIASED JFET VDD provides a drain-to-source voltage and supplies current from drain to source VGG sets the reverse-biased
MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.
MOSFET Terminals The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. For an n-channel MOSFET, the SOURCE is biased at a lower potential (often
Chapter 6: Field-Effect Transistors
Chapter 6: Field-Effect Transistors FETs vs. BJTs Similarities: Amplifiers Switching devices Impedance matching circuits Differences: FETs are voltage controlled devices. BJTs are current controlled devices.
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-8 Junction Field
UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
KOREA UNIVERSITY. Photonics Laboratory. Ch 15. Field effect Introduction-The J-FET and MESFET
Ch 15. Field effect Introduction-The J-FET and MESFET : (a) The device worked on the principle that a voltage applied to the metallic plate modulated the conductance of the underlying semiconductor, which
Electronics I. Last Time
(Rev. 1.0) Electronics I Lecture 28 Introduction to Field Effect Transistors (FET s) Muhammad Tilal Department of Electrical Engineering CIIT Attock Campus The logo and is the property of CIIT, Pakistan
The Common Source JFET Amplifier
The Common Source JFET Amplifier Small signal amplifiers can also be made using Field Effect Transistors or FET's for short. These devices have the advantage over bipolar transistors of having an extremely
L MOSFETS, IDENTIFICATION, CURVES. PAGE 1. I. Review of JFET (DRAW symbol for n-channel type, with grounded source)
L.107.4 MOSFETS, IDENTIFICATION, CURVES. PAGE 1 I. Review of JFET (DRAW symbol for n-channel type, with grounded source) 1. "normally on" device A. current from source to drain when V G = 0 no need to
INTRODUCTION: Basic operating principle of a MOSFET:
INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying
ITT Technical Institute. ET215 Devices 1. Unit 8 Chapter 4, Sections
ITT Technical Institute ET215 Devices 1 Unit 8 Chapter 4, Sections 4.4 4.5 Chapter 4 Section 4.4 MOSFET Characteristics A Metal-Oxide semiconductor field-effect transistor is the other major category of
Transistors. Bipolar Junction transistors Principle of operation Characteristics. Field effect transistors Principle of operation Characteristics
Transistors ipolar Junction transistors Principle of operation haracteristics Field effect transistors Principle of operation haracteristics ntroduction Radio based on vacuum tubes Fundamental building
Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology
K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm
MOSFET & IC Basics - GATE Problems (Part - I)
MOSFET & IC Basics - GATE Problems (Part - I) 1. Channel current is reduced on application of a more positive voltage to the GATE of the depletion mode n channel MOSFET. (True/False) [GATE 1994: 1 Mark]
THE METAL-SEMICONDUCTOR CONTACT
THE METAL-SEMICONDUCTOR CONTACT PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider
Difference between BJTs and FETs. Junction Field Effect Transistors (JFET)
Difference between BJTs and FETs Transistors can be categorized according to their structure, and two of the more commonly known transistor structures, are the BJT and FET. The comparison between BJTs
Electronic PRINCIPLES
MALVINO & BATES Electronic PRINCIPLES SEVENTH EDITION Chapter 13 JFETs Topics Covered in Chapter 13 Basic ideas Drain curves Transconductance curve Biasing in the ohmic region Biasing in the active region
Solid State Device Fundamentals
Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)
Field Effect Transistor (FET) FET 1-1
Field Effect Transistor (FET) FET 1-1 Outline MOSFET transistors ntroduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Biasing Circuits and Examples Comparison between JFET and epletion-type
Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1
Lecture 13 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Outline Continue MOSFET Qualitative Operation epletion-type MOSFET Characteristics Biasing Circuits and Examples Enhancement-type
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
Topic 2. Basic MOS theory & SPICE simulation
Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
Analogue Electronics
Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Field-effect transistors Field-effect transistors (FETs) are probably
BJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
Electronics 1 Lab (CME 2410) School of Informatics & Computing German Jordanian University Laboratory Experiment (10) Junction FETs
Electronics 1 Lab (CME 2410) School of Informatics & Computing German Jordanian University Laboratory Experiment (10) 1. Objective: Junction FETs - the operation of a junction field-effect transistor (J-FET)
Lecture (09) The JFET (2)
Lecture (09) The JFET (2) By: r. Ahmed Elhafee ١ V Controls I connect a bias voltage, V V is set to increasingly more negative values by adjusting V, a family of drain characteristic curves is produced.
UNIT II JFET, MOSFET, SCR & UJT
UNIT II JFET, MOSFET, SCR & UJT JFET JFET as an Amplifier and its Output Characteristics JFET Applications MOSFET Working Principles, SCR Equivalent Circuit and V-I Characteristics. SCR as a Half wave
Field Effect Transistors
Field Effect Transistors LECTURE NO. - 41 Field Effect Transistors www.mycsvtunotes.in JFET MOSFET CMOS Field Effect transistors - FETs First, why are we using still another transistor? BJTs had a small
Frequently Asked Questions
Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 13 Lecture Title: Analog Circuits
ELEC 3908, Physical Electronics, Lecture 16. Bipolar Transistor Operation
ELEC 3908, Physical Electronics, Lecture 16 Bipolar Transistor Operation Lecture Outline Last lecture discussed the structure and fabrication of a double diffused bipolar transistor Now examine current
Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor In this chapter, we will: Study and understand the operation and characteristics of the various types
Sub-Threshold Region Behavior of Long Channel MOSFET
Sub-threshold Region - So far, we have discussed the MOSFET behavior in linear region and saturation region - Sub-threshold region is refer to region where Vt is less than Vt - Sub-threshold region reflects
Figure 1: JFET common-source amplifier. A v = V ds V gs
Chapter 7: FET Amplifiers Switching and Circuits The Common-Source Amplifier In a common-source (CS) amplifier, the input signal is applied to the gate and the output signal is taken from the drain. The
Solid State Devices- Part- II. Module- IV
Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the
Chapter 6 DIFFERENT TYPES OF LOGIC GATES
Chapter 6 DIFFERENT TYPES OF LOGIC GATES Lesson 9 CMOS gates Ch06L9-"Digital Principles and Design", Raj Kamal, Pearson Education, 2006 2 Outline CMOS (n-channel based MOSFETs based circuit) CMOS Features
Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor
Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Introduction Why we call it Transistor? The name came as an
Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and
Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body
Microelectronics Circuit Analysis and Design
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 In this chapter, we will: Study and understand the operation
Laboratory #5 BJT Basics and MOSFET Basics
Laboratory #5 BJT Basics and MOSFET Basics I. Objectives 1. Understand the physical structure of BJTs and MOSFETs. 2. Learn to measure I-V characteristics of BJTs and MOSFETs. II. Components and Instruments
UNIT 4 BIASING AND STABILIZATION
UNIT 4 BIASING AND STABILIZATION TRANSISTOR BIASING: To operate the transistor in the desired region, we have to apply external dec voltages of correct polarity and magnitude to the two junctions of the
Physics 481 Experiment 3
Physics 481 Experiment 3 LAST Name (print) FIRST Name (print) TRANSISTORS (BJT & FET) npn BJT n-channel MOSFET 1 Experiment 3 Transistors: BJT & FET In this experiment transistor properties and transistor
Lecture Integrated circuits era
Lecture 1 1.1 Integrated circuits era Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell laboratories. In 1961, first IC was introduced. Levels of Integration:-
Lecture (10) MOSFET. By: Dr. Ahmed ElShafee. Dr. Ahmed ElShafee, ACU : Fall 2016, Electronic Circuits II
Lecture (10) MOSFET By: Dr. Ahmed ElShafee ١ Dr. Ahmed ElShafee, ACU : Fall 2017, Electronic Circuits II Introduction The MOSFET (metal oxide semiconductor field effect transistor) is another category
AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014
Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current
UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences.
UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences Discussion #9 EE 05 Spring 2008 Prof. u MOSFETs The standard MOSFET structure is shown
MOS Field Effect Transistors
MOS Field Effect Transistors A gate contact gate interconnect n polysilicon gate source contacts W active area (thin oxide area) polysilicon gate contact metal interconnect drain contacts A bulk contact
INTRODUCTION TO MOS TECHNOLOGY
INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor