Prof. Anyes Taffard. Physics 120/220. Diode Transistor
|
|
- Thomas Tyler
- 5 years ago
- Views:
Transcription
1 Prof. Anyes Taffard Physics 120/220 Diode Transistor
2 Diode One can think of a diode as a device which allows current to flow in only one direction. Anode I F Cathode stripe Diode conducts current in this direction: I F A diode is fabricated from a pn junction. Semi-conductors (eg Si, Ge) can be doped with small concentration of impurities to yield a material that conducts electricity via e- transport (n-type) or via holes (p-type). Brought together, you get a pn junction. The e (holes) migrate away from the n- type (p-type) side. When the diode is forward bias, the redistribution of charge give rise to a potential gap: ΔV~ V (Si) 2
3 Diode application: rectifier Rectifier: converts AC à DC 3 AC R load V load V load V in minus the diode voltage drop (~0.7V) Output waveform will have a large amount of ripples. To produce a steady continuous DC voltage, one can connect a large value capacitor across the output voltage terminals (Smoothing capacitor). NB: In forward bias conduction, diode resistance à 0. The power dissipated in diode V 2 /0à. To avoid burning diode, you must use current limiting resistor, typically 100-1k.
4 Diode application: Full wave bridge rectifier 4 Another example: Full wave bridge rectifier Positive 1/2 cycle. D1 & D2 conduct in series D3 and D4 are reverse biased Negative 1/2 cycle. D3 & D4 conduct in series D1 and D2 are reverse biased The current through the load flows always in the same direction. During each ½ cycle, the current flows through 2 diodes, so the output voltage drops by V with respect to the input voltage.
5 Diode application: Limiter 5 This circuit limits the output swing to one diode drop (~± V) This clamp circuit is often used as input protection for a high gain amplifier. For eg, RHS diode at +5V, V out is clamped at about +0.6V and -0.6V. NB: If you burn a diode, you would not see it beside the fact that your circuit isn't working so well. Use a tester (diode setting) to check your diode.
6 6 Transistors & Transistor circuits
7 Introduction 7 One of the most important example of active component: a device that can amplify: produce an output signal with more power than the input. The additional power comes from an external source of power (PS). Transistor is the essential ingredient of every electronic circuit: amplifier switch logic gates/digital computer (eg CPU contains >4 billions transistors) Integrated circuits (ICs) have largely replaced circuits constructed with discrete transistors. ü Transistors count on ICs: x2/year (Moore s law)
8 Bipolar Junction Transistor (BJT) 8 3-terminal device available in 2 flavors: npn & pnp B-C diode is usually reverse-biased (except in saturation ) B-E diode is usually forward-biased, i.e. conducting (except in cut-off ) npn is more common eg 2N3904 Somehow behave like diode, but don t take this too literally (in particular for B-C). transistor model Other type of technology: FETs (Field-Effect-Transistor)
9 Notations 9 Voltages: V C, V B, V E : voltage on transistor terminals C, B, E relative to ground V CE, V BE : voltage drop between terminals V CC : positive power supply voltage (collector) V EE : negative power supply voltage (emitter) Currents: I C, I B, I E : current flowing through that lead of the transistor I C or I E is usually what you use a transistor for I B is much smaller, and is the input used to control I C or I E I B is diode conduction, I C is not I E I C + I B Modes of operations Saturated (ON): I C is big Cutoff (OFF): I C is zero Active region: I C h FE I B
10 Transistor rules of operations (active region) 10 The following conditions need to be met in order to operate the transistor 1. V C > V E [if not, transistor not useful] 2. V B V E + 0.6V (B-E diode fwd-biased) [if not, cut-off mode I C 0] 3. V C > V B (B-C diode reverse-biased) [if not, saturated mode, I C is big] 4. Don t exceed max rating for I C, I B and V CE When all conditions are met: [Active region] h FE β : current gain (typically ~100) Using Kirchhoff s rule: I C h FE I B βi B I E I B + I C I B ( β +1) I C If the transistor cannot achieve its nominal β, saturated. I C βi B, the transistor is Since V B ~V E & I E >> I B, then input impedance >> output impedance. The transistor is able to control a large current I C I E with a small current I B.
11 Example Given V CC 20V, V B 5.6V. R 1 4.7k, R 2 3.3k and h FE 100. Find V E, I E, I B V E V B 0.6 5V I E V E 0 R k 1.5mA 11 I B I E ( 1+ h FE ) mA I C I E I B I E 1.5mA V C V CC I C R mA 4.7k V
12 Emitter follower Called follower because the output terminal (emitter) follows the input one (base). For an operating transistor: V out V E V B v out v E v B where v, i represent the time varying signal (AC) From the above, we can determine the gain: ü (ie no voltage gain) Since ( ) i E i B β +1 output to input equal to β +1., follower exhibits a current gain of ( ) Assuming V out draws negligible current: i B i E β +1 v E R β +1 v B R β +1 ( ) i E v E R G v out v in v E v B 1 Here, R is the load, or the load is in parallel to R, but R dominates the equivalent resistance.
13 Emitter follower input/output impedance Input impedance of the follower Z in v in i in v B Z load ( β +1) i B 13 Output impedance (@ emitter): Z out v in i E v in Z source ( β +1)i B β +1 ( ) where Z source is the impedance of the circuit which gave rise to v in. The emitter-follower reduces the output impedance relative to that of the source impedance by a factor (β+1)~100. This configuration is useful for impedance matching applications, because of the very high input impedance while having a relatively low output impedance.
14 Emitter follower impedance (cont.) Thus the input and output sees what it wants to see on the other side of the transistor: 14 Z in Z load ( β +1) Input impedance as seen at the base Output impedance as seen at the emitter Z out Z source β +1 ( ) Using an emitter follower, a given signal source requires less power to drive a load than if the source were to drive the load directly ü Very good, since in general we want Z out (stage n) << Z in (stage n + 1) (by at least a factor of 10) ü An emitter follower has current gain, even though it has no voltage gain ü The emitter follower has power gain
15 Emitter Follower Summary The output voltage at the emitter is the same as the input voltage at the collector (i.e. follows ), with the exception of the 0.6V Gain 1 V B >0.6 for the transistor to turn-on, else voltage clipping. Output impedance is much larger than input impedance 15 I E >>I B, i.e current gain by factor h FE The circuit requires less power from the signal source (V in ) to drive the load than if the load was to be directly power by the source.
16 Common Emitter Amplifier Assume the input, is the sum of a DC offset voltage, V 0, and a time varying signal, v in. V 0 provides the transistor bias, so that V B >V E, and v in is the AC signal of interest. 16 Determining the AC signal gain: v out v in Collector resistor: Emitter: Transistor: output ( V cc V out ) R c I c V E R E I E V E V B 0.6 V B V in I E I C + I B I E I C ( 1+ β 1 ) (1) [Ohm s law] (2) [Ohm s law] (3) [Active region] I C βi B I B I C β 1 (4) From (1) V out V cc I c R c or v out i c R c [AC part] From (3) V in V B V E I E R E V in I C ( 1+ β 1 )R E (using (2)) (using (4)) v in i C ( 1+ β 1 )R E [AC part]
17 Common Emitter Amplifier (cont.) 17 Gain: v out v in i C i c R ( c 1+ β 1 )R E β ~ 100 β 1 ~ 0.01 A i R c R E AC gain of common emitter amplifier Note gain <0 à inverting amplifier + à -
18 Circuit biasing and input 18 How do we provide the input voltage (V 0 +v in ) to our common emitter amplifier? It is necessary to bias the follower so that I C flows during the entire signal swing. In this case, a voltage divider is the simplest way. R 1 & R 2 (voltage divider) provide the DC bias voltage (V 0 ) The time varying signal is input through C, which blocks outside DC current, which may affect the quiescent (no input) values ( AC-coupled follower ) f 3dB 1 2π R eq C so C 1 2π f 3dB R eq where R eq R 1 R 2 βr E
19 Circuit biasing and input (cont.) The diode and Z in represent the transistor input Voltage drop across B-E diode and input impedance R TH is the Thevenin equivalent resistance for the DC input network (R 1 & R 2 ) ( ) Z in R E β Design procedure: 1. Choose the amplifier gain, if need be Choose R E to center V out between V CC and V EE R TH << Z in R E ( β +1) R TH < 1 10 βr E 2. Choose ie A i R c R E 3. Determine R 1 and R 2 based on the equivalent circuit 4. Choose C to provide a proper high-pass cutoff frequency Equivalent circuit as p16, for design of DC input network ü R of the RC high-pass is R TH in parallel with Z in, the input impedance of the follower ü Note that if the transistor circuit is connected to a load, the impedance that gets magnified will be R E in parallel with R load. f 3dB 1 2π R C [Hz] See Student Manual p90 for detailed worked out example in addition to the one here.
20 Common Emitter Amplifier Summary 20 Current gain, but no voltage gain Avoid clipping during negative input swings Voltage divider (R 1 & R 2 ) is used to give the input signal (after passing through the cap) a positive DC level or operating point (also known as quiescent point) Both input and output caps are added so that an AC input/output signal can be added without disturbing the DC operating point. Caps act as filters.
21 Common Emitter Amplifier: Design Design a Common Emitter Amplifier to power a 3k load, which has a supply voltage V CC 10 V, a transistor h FE 100 and a desired f 3DB point of 100 Hz Choose a quiescent current I Q I C. I C 1 ma 2. Select V E so that V E 1 to allow for the largest possible symmetric output 2 V CC swing without clipping. V E 5V. To set V E to this value and still get I C 1 ma, we can compute what R E should be: R E 1 2V CC I C 5 1mA 5k
22 Common Emitter Amplifier: Design (cont.) 3. Set V B V E for quiescent conditions (to match up V E so as to avoid clipping) To set V B we use the voltage divider. The ratio between R1 & R2 is determined by rearranging the voltage-divider relation and substitution into it V B. R 2 V B V E R 1 V CC V B V CC V E ( ) 22 We can make an approximation and set R 1 R 2. This forgets the 0.6 V drop, which usually isn t too dramatic. The actual size of R 1 & R 2 should be such that their parallel resistance is less or equal to 1/10 the DC (quiescent) input resistance at the base. This prevents the voltage divider from lowering under loading conditions: R 1 R 2 R 1 + R R in(base),dc R R (using the approx RR R ) in(base),dc 1 2 Here Thus R 1 R 2 100k R in(base),dc h FE R E 100 5k 500k Here we don t need to worry about the AC coupled load. It does not influence the voltage divider because we assume the quiescent setup conditions. C 2 acts as an open circuit, thus eliminating the presence of the load
23 Common Emitter Amplifier: Design (cont.) 4. Finally we need to choose the AC coupling capacitor, C 1, so that to block out the DC levels and other undesired frequencies. 23 C 1 forms a high-pass filter with R in. To find R in, we treat the voltage divider and R in(base), DC as being in parallel: No longer treat the load as being absent when fluctuating 1 signals are applied to the input. The capacitor begins to pass a displacement current. 1 R in 1 R R 2 + R in(base),ac We must treat R E and R load in parallel and multiply by h FE to find R in(base), AC R R in(base),ac h E R load 5k 3k FE R E + R 100 load 5k + 3k 190k Let s find R in : 1 1 R in 100k k R 40k in Now we can choose C 1 to set the f 3DB point (C 1 and R in form a high-pass filter): C 1 1 2π f 3DB R in 1 2π k 0.04µF C 2 forms a high-pass filter with the load: C 2 1 2π f 3DB R load 1 2π 100 3k 0.5µF
24 Backup 24
25 Emitter Follower Impedance 25 When measuring the input and output impedance of the emitter follower, it is useful to think about the Thévenin equivalent circuit as seen at the input and the output: ü Input impedance seen by the source: V in V B B in Zsource + Zin Z source Z in V Z in V ü Output impedance seen by the load: In the lab, identify what should be V B, V in and Z source V out, no load ~ Z out V out, load Z load V out, load Z out Zload + Z load V out, no load In the lab, identify what should be V out (with and without load), Z load
PHYS225 Lecture 6. Electronic Circuits
PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three
More informationConcepts to be Covered
Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors
More informationLecture 12. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week
More informationThe shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect
Diode as Clamper A clamping circuit is used to place either the positive or negative peak of a signal at a desired level. The dc component is simply added or subtracted to/from the input signal. The clamper
More informationDiode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!
Diodes: What do we use diodes for? Lecture 5: Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double
More informationPHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1
Part I Diodes Purpose PHYS 3152 Methods of Experimental Physics I E2. In this experiment, you will investigate the current-voltage characteristic of a semiconductor diode and examine the applications of
More informationBJT AC Analysis CHAPTER OBJECTIVES 5.1 INTRODUCTION 5.2 AMPLIFICATION IN THE AC DOMAIN
BJT AC Analysis 5 CHAPTER OBJECTIVES Become familiar with the, hybrid, and hybrid p models for the BJT transistor. Learn to use the equivalent model to find the important ac parameters for an amplifier.
More informationElectronic Troubleshooting
Electronic Troubleshooting Chapter 3 Bipolar Transistors Most devices still require some individual (discrete) transistors Used to customize operations Interface to external devices Understanding their
More informationCHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis
More informationLecture 3: Transistors
Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,
More informationSEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET
SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change
More informationAnalog Circuits Part 2 Semiconductors
Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors
More informationChapter 6: Transistors and Gain
I. Introduction Chapter 6: Transistors and Gain This week we introduce the transistor. Transistors are three-terminal devices that can amplify a signal and increase the signal s power. The price is that
More informationElectronics EECE2412 Spring 2017 Exam #2
Electronics EECE2412 Spring 2017 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 30 March 2017 File:12198/exams/exam2 Name: : General Rules:
More informationPhy 335, Unit 4 Transistors and transistor circuits (part one)
Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit
More informationBIPOLAR JUNCTION TRANSISTORS (BJTs) Dr Derek Molloy, DCU
IPOLAR JUNCTION TRANSISTORS (JTs) Dr Derek Molloy, DCU What are JTs? Two PN junctions joined together is a JT Simply known as a transistor! ipolar? Current carried by electrons and holes Will see FETs
More informationBipolar Junction Transistors
Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal
More informationCapacitors, diodes, transistors
Capacitors, diodes, transistors capacitors charging and time response filters (impedance) semi-conductor diodes rectifiers transformers transistors CHM6158C - Lecture 3 1 Capacitors Symbol 2 Capacitors
More informationECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model
Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand
More informationChapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering
MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter
More informationTransistor electronic technologies
Transistor electronic technologies Bipolar Junction Transistor discrete or integrated circuit discrete = individual component MOS (Metal-Oxide-Silicon) Field Effect Transistor mainly used in integrated
More informationSUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N
Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate
More informationLecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
More informationUnit/Standard Number. LEA Task # Alignment
1 Secondary Competency Task List 100 SAFETY 101 Demonstrate an understanding of State and School safety regulations. 102 Practice safety techniques for electronics work. 103 Demonstrate an understanding
More informationoutput passes full first (positive) hump and 1/2-scale second hump
3. For V i > 0, V o 0. For V i < 0, V o V i. The resulting waveform consists only of the negative "humps" of the original cosine wave. Each hump has a duration of 0.5s there is a 0.5s gap between each
More informationTransistors and Applications
Chapter 17 Transistors and Applications DC Operation of Bipolar Junction Transistors (BJTs) The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two
More informationET215 Devices I Unit 4A
ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic
More informationEXPERIMENT 12: SIMULATION STUDY OF DIFFERENT BIASING CIRCUITS USING NPN BJT
EXPERIMENT 12: SIMULATION STUDY OF DIFFERENT BIASING CIRCUITS USING NPN BJT AIM: 1) To study different BJT DC biasing circuits 2) To design voltage divider bias circuit using NPN BJT SOFTWARE TOOL: PC
More informationBJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1
BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which
More informationI C I E =I B = I C 1 V BE 0.7 V
Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics
More informationPhysics 160 Lecture 5. R. Johnson April 13, 2015
Physics 160 Lecture 5 R. Johnson April 13, 2015 Half Wave Diode Rectifiers Full Wave April 13, 2015 Physics 160 2 Note that there is no ground connection on this side of the rectifier! Output Smoothing
More informationElectronics I Circuit Drawings. Robert R. Krchnavek Rowan University Spring, 2018
Electronics I Circuit Drawings Robert R. Krchnavek Rowan University Spring, 2018 Ideal Diode Piecewise Linear Models of a Diode Piecewise Linear Models of a Diode 1 r d Piecewise Linear Models of a Diode
More informationCarleton University ELEC Lab 1. L2 Friday 2:30 P.M. Student Number: Operation of a BJT. Author: Adam Heffernan
Carleton University ELEC 3509 Lab 1 L2 Friday 2:30 P.M. Student Number: 100977570 Operation of a BJT Author: Adam Heffernan October 13, 2017 Contents 1 Transistor DC Characterization 3 1.1 Calculations
More informationChapter 6 DIFFERENT TYPES OF LOGIC GATES
Chapter 6 DIFFERENT TYPES OF LOGIC GATES Lesson 3 RTL and DTL Gates Ch06L3-"Digital Principles and Design", Raj Kamal, Pearson Education, 2006 2 Outline Resistor transistor logic (RTL) RTL Circuit Characteristics
More informationModule 04.(B1) Electronic Fundamentals
1.1a. Semiconductors - Diodes. Module 04.(B1) Electronic Fundamentals Question Number. 1. What gives the colour of an LED?. Option A. The active element. Option B. The plastic it is encased in. Option
More informationEngineering Spring Homework Assignment 4: BJT Biasing and Small Signal Properties
Engineering 1620 -- Spring 2011 Homework Assignment 4: BJT Biasing and Small Signal Properties 1.) The circuit below is a common collector amplifier using constant current biasing. (Constant current biasing
More informationUNIVERSITY OF PENNSYLVANIA EE 206
UNIVERSITY OF PENNSYLVANIA EE 206 TRANSISTOR BIASING CIRCUITS Introduction: One of the most critical considerations in the design of transistor amplifier stages is the ability of the circuit to maintain
More informationChapter Two "Bipolar Transistor Circuits"
Chapter Two "Bipolar Transistor Circuits" 1.TRANSISTOR CONSTRUCTION:- The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one
More informationESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier
High Frequency BJT Model & Cascode BJT Amplifier 1 Gain of 10 Amplifier Non-ideal Transistor C in R 1 V CC R 2 v s Gain starts dropping at > 1MHz. Why! Because of internal transistor capacitances that
More informationDesigning an Audio Amplifier Using a Class B Push-Pull Output Stage
Designing an Audio Amplifier Using a Class B Push-Pull Output Stage Angel Zhang Electrical Engineering The Cooper Union for the Advancement of Science and Art Manhattan, NY Jeffrey Shih Electrical Engineering
More informationTutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers
Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.
More informationPhysics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More informationElectronics Lab. (EE21338)
Princess Sumaya University for Technology The King Abdullah II School for Engineering Electrical Engineering Department Electronics Lab. (EE21338) Prepared By: Eng. Eyad Al-Kouz October, 2012 Table of
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS Most of the content is from the textbook: Electronic devices and circuit theory,
More informationLab 4. Transistor as an amplifier, part 2
Lab 4 Transistor as an amplifier, part 2 INTRODUCTION We continue the bi-polar transistor experiments begun in the preceding experiment. In the common emitter amplifier experiment, you will learn techniques
More informationUNIT I Introduction to DC & AC circuits
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: Basic Electrical and Electronics Engineering (16EE207) Year & Sem: II-B.
More informationChapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
More informationUNIT 3 Transistors JFET
UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It
More information5.25Chapter V Problem Set
5.25Chapter V Problem Set P5.1 Analyze the circuits in Fig. P5.1 and determine the base, collector, and emitter currents of the BJTs as well as the voltages at the base, collector, and emitter terminals.
More informationCurrent Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.
Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect
More informationBipolar Junction Transistors (BJTs) Overview
1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology
More informationEEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture I James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Introduction This Lecture 1 Introduction Aims &
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NPN Bipolar Junction Transistor (BJT)
EE105 Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 utardja Dai Hall (DH) 1 NPN Bipolar Junction Transistor (BJT) Forward Bias Reverse Bias Hole Flow Electron
More informationBJT Circuits (MCQs of Moderate Complexity)
BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r
More informationDiode and Bipolar Transistor Circuits
Diode and Bipolar Transistor Circuits 2 2.1 A Brief Review of Semiconductors Semiconductors are crystalline structures in which each atom shares its valance electrons with the neighboring atoms. The simple
More informationR a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)
SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave
More informationElectronics EECE2412 Spring 2018 Exam #2
Electronics EECE2412 Spring 2018 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 29 March 2018 File:12262/exams/exam2 Name: General Rules: You
More informationME 4447 / 6405 Student Lecture. Transistors. Abiodun Otolorin Michael Abraham Waqas Majeed
ME 4447 / 6405 Student Lecture Transistors Abiodun Otolorin Michael Abraham Waqas Majeed Lecture Overview Transistor? History Underlying Science Properties Types of transistors Bipolar Junction Transistors
More informationExperiment 6: Biasing Circuitry
1 Objective UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE105 Lab Experiments Experiment 6: Biasing Circuitry Setting up a biasing
More informationImproving Amplifier Voltage Gain
15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance
More informationEE105 Fall 2015 Microelectronic Devices and Circuits
EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of
More informationEE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
More informationExperiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS
Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS 1. Objective: The objective of this experiment is to explore the basic applications of the bipolar junction transistor
More informationProf. Paolo Colantonio a.a
Prof. Paolo olantonio a.a. 2011 12 ipolar transistors are one of the main building blocks in electronic systems They are used in both analogue and digital circuits They incorporate two pn junctions and
More informationTransistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018
Transistor Biasing DC Biasing of BJT Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com A transistors steady state of operation depends a great deal
More information(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
More informationANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS
AV18-AFC ANALOG FUNDAMENTALS C Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS 1 ANALOG FUNDAMENTALS C AV18-AFC Overview This topic identifies the basic FET amplifier configurations and their principles of
More informationEXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT
EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current
More informationES330 Laboratory Experiment No. 9 Bipolar Differential Amplifier [Reference: Sedra/Smith (Chapter 9; Section 9.2; pp )]
ES330 Laboratory Experiment No. 9 Bipolar Differential Amplifier [Reference: Sedra/Smith (Chapter 9; Section 9.2; pp. 614-627)] Objectives: 1. Explore the operation of a bipolar junction transistor differential
More informationLecture (06) Bipolar Junction Transistor
Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One
More informationElectronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.
IPOLA TANSISTOS onstruction, circuit symbols and biasing examples for NPN and PNP junction transistors Slide 1 xternal bias voltages create an electric field, which pulls electrons (emitted into the base
More informationLecture 7. ANNOUNCEMENTS MIDTERM #1 willbe held in class on Thursday, October 11 Review session will be held on Friday, October 5
Lecture 7 ANNOUNCEMENTS MIDTERM #1 willbe held in class on Thursday, October 11 Review session will be held on Friday, October 5 MIDTERM #2 will be held in class on Tuesday, November 13 OUTLINE BJT Amplifiers
More informationPaper-1 (Circuit Analysis) UNIT-I
Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define
More informationBJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
More informationPART-A UNIT I Introduction to DC & AC circuits
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code : Basic Electrical and Electronics Engineering (16EE207)
More informationEE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
More informationElectronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 4 0 Bipolar Junction Transistors (BJT) Small Signal Analysis Graphical Analysis / Biasing Amplifier, Switch and Logic
More informationMTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap
MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor transistors for logic and memory Reading: Kasap 6.6-6.8 Vacuum tube diodes 2 Thermionic emission from cathode Electrons collected
More informationCourse Roadmap Rectification Bipolar Junction Transistor
Course oadmap ectification Bipolar Junction Transistor Acnowledgements: Neamen, Donald: Microelectronics Circuit Analysis and Design, 3 rd Edition 6.101 Spring 2017 Lecture 3 1 6.101 Spring 2017 Lecture
More informationElectronic PRINCIPLES
MALVINO & BATES Electronic PRINCIPLES SEVENTH EDITION Chapter 9 AC Models Topics covered in Chapter 9 Base-biased amplifier Emitter-biased amplifier Small-signal operation AC beta AC resistance of the
More informationTransistor Characteristics
Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that
More informationEE 330 Laboratory 8 Discrete Semiconductor Amplifiers
EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2018 Contents Objective:...2 Discussion:...2 Components Needed:...2 Part 1 Voltage Controlled Amplifier...2 Part 2 A Nonlinear Application...3
More informationChapter 5: Diodes. I. Theory. Chapter 5: Diodes
Chapter 5: Diodes This week we will explore another new passive circuit element, the diode. We will also explore some diode applications including conversion of an AC signal into a signal that never changes
More informationชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร
EN2042102 วงจรไฟฟ าและอ เล กทรอน กส Circuits and Electronics บทท 7 ทรานซ สเตอร Bipolar Junction Transistor สาขาว ชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร Objectives Describe
More information55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.
Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring
More informationCode No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions
More information1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier. (2 points)
Exam 1 Name: Score /60 Question 1 Short Takes 1 point each unless noted otherwise. 1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier.
More informationChapter 3. Bipolar Junction Transistors
Chapter 3. Bipolar Junction Transistors Outline: Fundamental of Transistor Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Introduction The transistor is a three-layer
More informationChapter 15 Goals. ac-coupled Amplifiers Example of a Three-Stage Amplifier
Chapter 15 Goals ac-coupled multistage amplifiers including voltage gain, input and output resistances, and small-signal limitations. dc-coupled multistage amplifiers. Darlington configuration and cascode
More informationPhysics 364, Fall 2014, Lab #12 (transistors I: emitter follower) Monday, October 13 (section 401); Tuesday, October 14 (section 402)
Physics 364, Fall 2014, Lab #12 Name: (transistors I: emitter follower) Monday, October 13 (section 401); Tuesday, October 14 (section 402) Course materials and schedule are at positron.hep.upenn.edu/p364
More informationElectrical, Electronic and Communications Engineering Technology/Technician CIP Task Grid
Secondary Task List 100 SAFETY 101 Describe OSHA safety regulations. 102 Identify, select, and demonstrate proper hand tool use for electronics work. 103 Recognize the types and usages of fire extinguishers.
More informationField Effect Transistors
Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,
More informationFigure1: Basic BJT construction.
Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).
More informationExperiment 6: Biasing Circuitry
1 Objective UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE105 Lab Experiments Experiment 6: Biasing Circuitry Setting up a biasing
More informationLaboratory 3 W. Liu, by A. Shakouri and K. Pedrotti. Introduction to Bipolar Junction Transistors
University of California at Santa Cruz Jack Baskin School of Engineering EE-171L: Analog Electronics Lab Laboratory 3 W. Liu, by A. Shakouri and K. Pedrotti Name: Partner: Introduction to Bipolar Junction
More informationAnalog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay
Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay Week - 08 Module - 04 BJT DC Circuits Hello, welcome to another module of this course
More informationCommon-Emitter Amplifier
Dr. Charles Kim Common-Emitter Amplifier A. Before We Start As the title of this lab says, this lab is about designing a Common-Emitter Amplifier, and this in this stage of the lab course is premature,
More informationChapter 8. Field Effect Transistor
Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There
More informationHomework Assignment 05
Homework Assignment 05 Question (2 points each unless otherwise indicated)(20 points). Estimate the parallel parasitic capacitance of a mh inductor with an SRF of 220 khz. Answer: (2π)(220 0 3 ) = ( 0
More informationComponent modeling. Resources and methods for learning about these subjects (list a few here, in preparation for your research):
Component modeling This worksheet and all related files are licensed under the Creative Commons Attribution License, version 1.0. To view a copy of this license, visit http://creativecommons.org/licenses/by/1.0/,
More information