256Mb / 16M x 16 bit Synchronous DRAM (SDRAM)

Transcription

1 Alliance Memory Features Fast access time from clock: 4.5/5.4/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank Programmable Mode registers o CAS Latency: 2, or 3 o Burst Length: 1, 2, 4, 8, or full page o Burst Type: interleaved or linear burst o Burst stop function Auto Refresh and Self Refresh Operating temperature range o - Commercial (0 ~ 70 C) o - Industrial (-40 ~ 85 C) 8192 refresh cycles/64ms power down mode Single +3.3V power supply Interface: LVTTL 54-pin 400 mil plastic TSOP II package o Pb free and Halogen free Table 1. Key Specifications -5/6/7 tck3 Clock Cycle time (min.) 5/6/7 ns tac3 Access time from (max.) 4.5/5.4/5.4 ns tras Row Active time (min.) 40/42/49 ns trc Row Cycle time (min.) 55/60/63 ns Table 2. Ordering Information Part Number Frequency Package -5TCN 200 MHz TSOP II -6TCN 166 MHz TSOP II -6TIN 166 MHz TSOP II -7TCN 143 MHz TSOP II -7BCN 143 MHz TFBGA -6BIN 166 MHz TFBGA T : indicates TSOP II package B : indicates TFBGA package N : indicates Pb free and Halogen free C: Commercial I: Industrial temperatures Overview The SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, ). and write accesses to the SDRAM are burst oriented; accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank command which is then followed by a or command. The provides for programmable or burst length of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for application requiring high memory bandwidth and particularly well suited to high performance PC applications. 1

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3 Pin Descriptions Table 3. Pin Details of Symbol Type Description Input Clock: is driven by the system clock. All SDRAM input signals are sampled on the positive edge of. also increments the internal burst counter and controls the output registers. Input Clock Enable: activates (HIGH) and deactivates (LOW) the signal. If goes low synchronously with clock (set-up and hold time same as other inputs), the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the remains low. When all banks are in the idle state, deactivating t he clock controls the entry to the Power Down and Self Refresh modes. is synchronous except after the device enters Power Down and Self Refresh modes, where becomes asynchronous until exiting the same mode. The input buffers, including, are disabled during Power Down and Self Refresh modes, providing low standby power. BA0,BA1 Input ctivate: BA0, BA1 input select the bank for operation. BA1 BA0 Select Bank 0 0 BANK #A 0 1 BANK #B 1 0 BANK #C 1 1 BANK #D A0-A12 Input Address Inputs: A0-A12 are sampled during the Bank command (row address A0- A12) and / command (column address A0-A8 with defining Auto ) to select one location out of the 4M available in the respective bank. During a command, is sampled to determine if all banks are to be precharged ( = HIGH). The address inputs also provide the op-code during a Mode Register Set command. Input Chip Select: enables (sampled LOW) and disables (sampled HIGH) the command decoder. All commands are masked when is sampled HIGH. provides for external bank selection on systems with multiple banks. It is considered part of the command code. Input Row Address Strobe: The signal defines the operation commands in conjunction with the and signals and is latched at the positive edges of. When and are asserted "LOW" and is asserted "HIGH," either the Bank command or t he command is selected by the signal. When the is asserted "HIGH," the Bank command is selected and the bank designated by BA is turned on to the active state. When the is asserted "LOW," the command is selected and the bank designated by BA is switched to the idle state after the precharge operation. Input Column Address Strobe: The signal defines the operation commands in conjunction with the and signals and is latched at the positive edges of. When is held "HIGH" and is asserted "LOW," the column access is started by asserting "LOW." Then, the or command is selected by asserting "LOW" or "HIGH." Input Enable: The signal defines the operation commands in conjunction with the and signals and is latched at the positive edges of. The input is used to select the ctivate or command and or command. 3

4 L, U Input 0-15 Input / Output NC/RFU - VD VSSQ Data Input/Output Mask: Controls output buffers in read mode and masks Input data in write mode. Data I/O: The 0-15 input and output data are synchronized with the positive edges of. The I/Os are maskable during s and s. No Connect: These pins should be left unconnected. Supply Power: Provide isolated power to s for improved noise immunity. ( 3.3V± 0.3V ) Supply Ground: Provide isolated ground to s for improved noise immunity. ( 0 V ) VDD Supply Power Supply: +3.3V ± 0.3V VSS Supply Ground 4

5 Operation Mode Fully synchronous operations are performed to latch the commands at the positive edges of. Table 4 shows the truth table for the operation commands. State Table 4. Truth Table (Note (1), (2)) n-1 n A0-9,12 Bank Idle (3) H X X V Row address L L H H Bank Any H X X V L X L L H L All Any H X X X H X L L H L Active (3) H X V V L Column L H L L address and Auto Active (3) H X V V H (A0 ~ A8) L H L L Active (3) H X V V L Column L H L H address and Autoprecharge Active (3) H X V V H (A0 ~ A8) L H L H Mode Register Set Idle H X X OP code L L L L No-Operation Any H X X X X X L H H H Burst Stop Active (4) H X X X X X L H H L Device Deselect Any H X X X X X H X X X AutoRefresh Idle H H X X X X L L L H SelfRefresh Entry Idle H L X X X X L L L H SelfRefresh Exit Idle (SelfRefresh) L H X X X X H X X X L H H H Clock Suspend Mode Entry Active H L X X X X H X X X L V V V Power Down Mode Entry Any (5) H L X X X X H X X X L H H H Clock Suspend Mode Exit Active L H X X X X X X X X Power Down Mode Exit Any (PowerDown) L H X X X X H X X X L H H H Data /Output Enable Active H X L X X X X X X X Data Mask/Output Disable Active H X H X X X X X X X Note: 1. V=Valid, X=Don't Care L=Low level H=High level 2. n signal is input level when commands are provided. n-1 signal is input level one clock cycle before the commands are provided. 3. These are states of bank designated by BA signal. 4. Device state is 1, 2, 4, 8, and full page burst operation. 5. Power Down Mode cannot enter in the burst operation. When this command is asserted in the burst cycle, device state is clock suspend mode. 5

6 s 1 Bank ( = "L", = "H", = "H", BAs = Bank, A0-A12 = Row Address) The Bank command activates the idle bank designated by the BA0, 1 signal. By latching the row address on A0 to A12 at the time of this command, the selected row access is initiated. The read or write operation in the same bank can occur after a time delay of trcd (min.) from the time of bank activation. A subsequent Bank command to a different row in the same bank can only be issued after the previous active row has been precharged (refer to the following figure). The minimum time interval between successive Bank commands to the same bank is defined by trc (min.). The SDRAM has four internal banks on the same chip and shares part of the internal circuitry to reduce chip area; therefore it restricts the back-toback activation of the two banks. trrd (min.) specifies the minimum time required between activating different banks. After this command is used, the command and the Block command perform the no mask write operation. 2 Bank command ( = "L", = "H", = "L", BAs = Bank, = "L", A11 and A12 = Don't care) The Bank command precharges the bank designated by BA signal. The precharged bank is switched from the active state to the idle state. This command can be asserted anytime after tras(min.) is satisfied from the Bank command in the desired bank. The maximum time any bank can be active is specified by t RAS(max.). Therefore, the precharge function must be performed in any active bank within t RAS(max.). At the end of precharge, the precharged bank is still in the idle state and is ready to be activated again. 3 All command ( = "L", = "H", = "L", BAs = Don t care, = "H", A11 and A12 = Don't care) The All command precharges all banks simultaneously and can be issued even if all banks are not in the active state. All banks are then switched to the idle state. 4 command ( = "H", = "L", = "H", BAs = Bank, = "L", A0-A8 = Column Address) The command is used to read a burst of data on consecutive clock cycles from an active row in an active bank. The bank must be active for at least trcd (min.) before the command is issued. During read bursts, the valid data-out element from the starting column address will be available following the latency after the issue of the command. Each subsequent data-out element will be valid by the next positive clock edge (refer to the following figure). The s go into high-impedance at the end of the burst unless other command is initiated. The burst length, burst sequence, and latency are determined by the mode register, which is already programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). 6

7 The read data appears on the s subject to the values on the inputs two clocks earlier (i.e. latency is two clocks for output buffers). A read burst without the auto precharge function may be interrupted by a subsequent or command to the same bank or the other active bank before the end of the burst length. It may be interrupted by a Bank/All command to the same bank too. The interrupt coming from the command can occur on any clock cycle following a previous command (refer to the following figure). The inputs are used to avoid I/O contention on the pins when the interrupt comes from a command. The s must be asserted (HIGH) at least two clocks prior to the command to suppress data-out on the pins. To guarantee the pins against I/O contention, a single cycle with high-impedance on the pins must occur between the last read data and the command (refer to the following three figures). If the data output of the burst read occurs at the second clock of the burst write, the s must be asserted (HIGH) at least one clock prior to the command to avoid internal bus contention. 7

8 A read burst without the auto precharge function may be interrupted by a Bank/All command to the same bank. The following figure shows the optimum time that Bank/All command is issued in different latency. 8

9 5 and Auto command ( = H, = L, = H, BAs = Bank, = H, A0-A8 = Column Address) The and Auto command automatically performs the precharge operation after the read operation. Once this command is given any subsequent command cannot occur within a time delay of {t RP (min.) + burst length}. At full-page burst, only the read operation is performed in this command and the auto precharge function is ignored. 6 command ( = H, = L, = L, BAs = Bank, = L, A0-A8 = Column Address) The command is used to write a burst of data on consecutive clock cycles from an active row in an active bank. The bank must be active for at least trcd (min.) before the command is issued. During write bursts, the first valid data-in element will be registered coincident with the command. Subsequent data elements will be registered on each successive positive clock edge (refer to the following figure). The s remain with high-impedance at the end of the burst unless another command is initiated. The burst length and burst sequence are determined by the mode register, which is already programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). A write burst without the auto precharge function may be interrupted by a subsequent, Bank/All, or command before the end of the burst length. An interrupt coming from command can occur on any clock following the previous command (refer to the following figure). 9

10 The command that interrupts a write burst without auto precharge function should be issued one cycle after the clock edge in which the last data-in element is registered. In order to avoid data contention, input data must be removed from the s at least one clock cycle before the first read data appears on the outputs (refer to the following figure). Once the command is registered, the data inputs will be ignored and writes will not be executed. The Bank/All command that interrupts a write burst without the auto precharge function should be issued m cycles after the clock edge in which the last data-in element is registered, where m equals twr/tck rounded up to the next whole number. In addition, the signals must be used to mask input data, starting with the clock edge following the last data-in element and ending with the clock edge on which the Bank/All command is entered (refer to the following figure). 10

11 7 and Auto command ( = H, = L, = L, BAs = Bank, = H, A0-A8 = Column Address) The and Auto command performs the precharge operation automatically after the write operation. Once this command is given, any subsequent command cannot occur within a time delay of {(burst length 1) + twr + trp (min.)}. At full-page burst, only the write operation is performed in this command and the auto precharge function is ignored. 8 Mode Register Set command (RSAS# = L, = L, = L, A0-A12 = Register Data) The mode register stores the data for controlling the various operating modes of SDRAM. The Mode Register Set command programs the values of latency. Addressing Mode and Burst Length in the Mode register to make SDRAM useful for a variety of different applications. The default values of the Mode Register after power-up are undefined; therefore this command must be issued at the power-up sequence. The state of pins A0 ~ A12 in the same cycle is the data written to the mode register. Two clock cycles are required to complete the write in the mode register (refer to the following figure). The contents of the mode register can be changed using the same command and the clock cycle requirements during operation as long as all banks are in the idle state. 11

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13 Burst Length Field (A2~A0) This field specifies the data length of column access using the A2~A0 pins and selects the Burst Length to be 2, 4, 8, or full page. Table 6. Burst Length Field A2 A1 A0 Burst Length Reserved Reserved Reserved Full Page Full Page Length: 512 Burst Type Field (A3) The Burst Type can be one of two modes, Interleave Mode or Sequential Mode. Table 7. Burst Type Field A3 Burst Type 0 Sequential 1 Interleave Burst Definition, Addressing Sequence of Sequential and Interleave Mode Table 8. Burst Definition Burst Length Start Address A2 A1 A0 Sequential Interleave 2 X X X X 0 1 0, 1 1, 0 0, 1 1, 0 X 0 0 0, 1, 2, 3 0, 1, 2, 3 X 0 1 1, 2, 3, 0 1, 0, 3, 2 4 X 1 0 2, 3, 0, 1 2, 3, 0, 1 X 1 1 3, 0, 1, 2 3, 2, 1, , 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, , 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, , 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, , 4, 5, 6, 7, 0, 1, 2 4, 5, 6, 7, 0, 1, 2, 3 3, 2, 1, 0, 7, 6, 5, 4 4, 5, 6, 7, 0, 1, 2, , 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, , 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, , 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0 n, n+1, n+2, n+3, 511, 0, Full page location = , 2, n-1, n, Not Support 13

14 Latency Field (A6~A4) This field specifies the number of clock cycles fr om the assertion of the command to the first read data. The minimum whole value of Latency depends on the frequency of. The minimum whole value satisfying the following formula must be programmed into this field. tcac(min) Latency X tck Table 9. Latency Field A6 A5 A4 Latency Reserved Reserved clocks clocks 1 X X Reserved Test Mode Field (A8~A7) These two bits are used to enter the test mode and must be programmed to "00" in normal operation. Table 10. Test Mode Field A8 A7 Test Mode 0 0 normal mode 0 1 Vendor Use Only 1 X Vendor Use Only Burst Length (A9) This bit is used to select the write burst mode. When the A9 bit is "0", the Burst--Burst- mode is selected. When the A9 bit is "1", the Burst--Single- mode is selected. Table 11. Burst Length A9 Burst Mode 0 Burst--Burst- 1 Burst--Single- Note: and BA should stay L during mode set cycle. 9 No-Operation command ( = "H", = "H", = "H") The No-Operation command is used to perform a NOP to the SDRAM which is selected ( is Low). This prevents unwanted commands from being registered during idle or wait states. 10 Burst Stop command ( = "H", = "H", = "L") The Burst Stop command is used to terminate either fixed-length or full-page bursts. This command is only effective in a read/write burst without the auto precharge function. The terminated read burst ends after a delay equal to the latency (refer to the following figure). The termination of a write burst is shown in the following figure. 14

15 11 Device Deselect command ( = "H") The Device Deselect command disables the command decoder so that the,, and Address inputs are ignored, regardless of whether the is enabled. This command is similar to the No Operation command. 12 AutoRefresh command ( = "L", = "L", = "H", = "H", A11 = Don t care, A0-A12 = Don't care) The AutoRefresh command is used during normal operation of the SDRAM and is analogous to - before- (CBR) Refresh in conventional DRAMs. This command is non-persistent, so it must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a "don't care" during an AutoRefresh command. The internal refresh counter increments automatic ally on every auto refresh cycle to all of the rows. The refresh operation must be performed 8192 times within 64ms. The time required to complete the auto refresh operation is specified by trc(min.). To provide the AutoRefresh command, all banks need to be in the idle state and the device must not be in power down mode ( is high in the previous cycle). This command must be followed by NOPs until the auto refresh operation is completed. The precharge time requirement, trp(min), must be met before successive auto refresh operations are performed. 13 SelfRefresh Entry command ( = "L", = "L", = "H", = "L", A0-A12 = Don't care) The SelfRefresh is another refresh mode available in the SDRAM. It is the preferred refresh mode for data retention and low power operation. Once the SelfRefresh command is registered, all the inputs to the SDRAM become "don't care" with t he exception of, which must remain LOW. The refresh addressing and timing is internally generated to reduce power consumption. The SDRAM may remain in SelfRefresh mode for an indefinite period. The SelfRefresh mode is exited by restarting the external clock and then asserting HIGH on (SelfRefresh Exit command). 15

16 14 SelfRefresh Exit command This command is used to exit from the SelfRefresh mode. Once this command is registered, NOP or Device Deselect commands must be issued for txsr(min.) because time is required for the completion of any bank currently being internally refreshed. If auto refresh cycles in bursts are performed during normal operation, a burst of 8192 auto refresh cycles should be completed just prior to entering and just after exiting the SelfRefresh mode. 15 Clock Suspend Mode Entry / PowerDown Mode Entry command ( = "L") When the SDRAM is operating the burst cycle, the internal is suspended (masked) from the subsequent cycle by issuing this command (asse rting "LOW"). The device operation is held intact while is suspended. On the other hand, when all banks are in the idle state, this command performs entry into the PowerDown mode. All input and output buffers (except the buffer) are turned off in the PowerDown mode. The device may not remain in the Clock Suspend or PowerDown state longer than the refresh period (64ms) since the command does not perform any refresh operations. 16 Clock Suspend Mode Exit / PowerDown Mode Exit command (= "H") When the internal has been suspended, the operation of the internal is reinitiated from the subsequent cycle by providing this command (asserting "HIGH", the command should be NOP or deselect). When the device is in the PowerDown mode, the device exits this mode and all disabled buffers are turned on to the active state. tpde(min.) is required when the device exits from the PowerDown mode. Any subsequent commands can be issued after one clock cycle from the end of this command. 17 Data / Output Enable, Data Mask / Output Disable command ( = "L", "H") During a write cycle, the signal functions as a Data Mask and can control every word of the input data. During a read cycle, the functions as the controller of output buffers. is also used for device selection, byte selection and bus control in a memory system. 16

17 Table 12. Absolute Maximum Rating Symbol Item Rating Unit Note VIN, VOUT Input, Output Voltage ~ 4.6 V 1 VDD, VD Power Supply Voltage -0.5 ~ 4.6 V 1 TA Ambient Temperature Commercial 0 ~ +70 C 1 Industrial -40 ~ +85 C TSTG Storage Temperature - 65 ~ 150 C 1 TSOLDER Soldering Temperature (10 second) 260 C 1 PD Power Dissipation 1 W 1 IOUT Short Circuit Output Current 50 ma 1 Table 13. Recommended D.C. Operating Conditions (T A = -40~85 C) Symbol Parameter Min. Typ. Max. Unit Note VDD Power Supply Voltage V 2 VD Power Supply Voltage(for I/O Buffer) V 2 VIH LVTTL Input High Voltage VD +0.3 V 2 VIL LVTTL Input Low Voltage V 2 IIL IOL VOH VOL Input Leakage Current - ( 0V - 10 VIN VDD, All other pins not under test = 0V ) 10 µa Output Leakage Current - Output disable, 0V - 10 VOUT VD) 10 µa LVTTL Output "H" Level Voltage - - ( 2.4 IOUT = -2mA ) V LVTTL Output "L" Level Voltage - - ( IOUT = 2mA ) 0.4 V Table 14. Capacitance (VDD = 3.3V, f = 1MHz, T A = 25 C) Symbol Parameter Min. Max. Unit CI Input Capacitance pf CI/O Input/Output Capacitance pf Note: These parameters are periodically sampled and are not 100% tested. 17

18 Table 15. D.C. Characteristics (VDD = 3.3V ± 0.3V, T A = -40~85 C) Description/Test condition Symbol -5-6 Max. -7 Unit Note Operating Current trc trc(min), Outputs Open One bank active IDD Standby Current in non-power down mode tck = 15ns, VIH(min), V IH Input signals are changed every 2clks IDD2N Standby Current in non-power down mode tck =, V IL (max), V IH IDD2NS Standby Current in power down mode tck = 15ns, VIL(max) IDD2P Standby Current in power down mode tck =, VIL(max) IDD2PS ma Active Standby Current in non-power down mode tck = 15ns, VIH(min), VIH(min) Input signals are changed every 2clks IDD3N Active Standby Current in non-power down mode VIH(min), VIL(max), tck = IDD3NS Operating Current (Burst mode) tck =tck(min), Outputs Open, Multi-bank interleave IDD , 4 Refresh Current trc trc(min) IDD Self Refresh Current 0.2V ; for other inputs VIH VDD - 0.2V, VIL 0.2V IDD

19 Symbol Table 16. Electrical Characteristics and Recommended A.C. Operating Conditions (VDD = 3.3V±0.3V, T A = -40~85 C) (Note: 5, 6, 7, 8) trc Row cycle time (same bank) A.C. Parameter Unit Note Min. Max. Min. Max. Min. Max trfc Refresh cycle time trcd trp trrd tmr D tras to delay (same bank) to refresh/row activate command (same bank) Row activate to row activate delay (different banks) Mode register set cycle time Row activate to precharge time (same bank) K K K twr recovery time tck Clock cycle time CL* = CL* = tch Clock high time tcl Clock low time tac Access time from (positive edge) CL* = CL* = toh Data output hold time tlz Data output low impedance thz Data output high impedance tis Data/Address/Control Input set-up time tih Data/Address/Control Input hold time tpde Power Down Exit set-up time tis+tck - tis+tck - tis+tck - trefi Average Refresh interval time µs txsr Exit Self-Refresh to trc+tis - trc+tis - trc+tis - ns * CL is CAS Latency. Note: 1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. 2. All voltages are referenced to V SS. VIH (Max) = 4.6V for pulse width 3ns. VIL (Min) = -1.5V for pulse width 3ns. 3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tck and trc. Input signals are changed one time during every 2 tck. 4. These parameters depend on the output loading. Specified values are obtained with the output open. 5. Power-up sequence is described in Note A.C. Test Conditions ns

20 Table 17. LVTTL Interface Reference Level of Output Signals 1.4V / 1.4V Output Load Reference to the Under Output Load (B) Input Signal Levels 2.4V / 0.4V Transition Time (Rise and Fall) of Input Signals 1ns Reference Level of Input Signals 1.4V 7. Transition times are measured between VIH and VIL. Transition (rise and fall) of input signals are in a fixed slope (1 ns). 8. thz defines the time in which the outputs achieve the open circuit condition and are not at reference levels. 9. If clock rising time is longer than 1 ns, (tr / 2-0.5) ns should be added to the parameter. 10. Assumed input rise and fall time tt (tr & tf) = 1 ns If t R or t F is longer than 1 ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1] ns should be added to the parameter. 11. Power up Sequence Power up must be performed in the following sequence. 1) Power must be applied to VDD and VD (simultaneously) when = L, = H and all input signals are held "NOP" state. 2) Start clock and maintain stable condition for minimum 200µs, then bring = H and, it is recommended that is held "HIGH" (VDD levels) to ensure output is in high impedance. 3) All banks must be precharged. 4) Mode Register Set command must be asserted to initialize the Mode register. 5) A minimum of 2 Auto-Refresh dummy cycles must be required to stabilize the internal circuitry of the device. * The Auto Refresh command can be issue before or after Mode Register Set command 20

21 Timing Waveforms Figure 19. AC Parameters for Timing (Burst Length=4) tch tcl tis tis tih Begin Auto Begin Auto tih RBx RAy tis CAx RBx CBx RAy CAy trcd tdal trc tis twr tih Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3 Ay0 Ay1 Ay2 Ay3 with Auto with Auto 21

22 Figure 20. AC Parameters for Timing (Burst Length=2, Latency=2) tch tcl T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 tis tis Begin Auto tih tih tih RBx RAy tis CAx RBx CBx RAy trrd tras trc trcd tac tlz Ax0 thz Ax1 Bx0 trp Bx1 toh thz with Auto 22

23 Figure 21. Auto Refresh (Burst Length=4, Latency=2) CAx trp trc trc trcd Ax0 Ax1 All Auto Refresh Auto Refresh 23

24 Figure 22. Power on Sequence and Auto Refresh High Level Is reguired Minimum for 2 Refresh Cycles are required A0-A9 Address Key trp tmrd All Inputs must be Stable for 200μs Mode Register Set 1st Auto Refresh (*) Note (*) : The Auto Refresh command can be issue before or after Mode Register Set command 2nd Auto Refresh (*) Any 24

25 Figure 23. Self Refresh Entry & Exit Cycle T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 *Note 2 *Note 1 *Note 5 *Note 3,4 tis tpde tis tih *Note 6 *Note 7 txsr *Note 8 *Note 9 Self Refresh Entry Self Refresh Exit Auto Refresh Note: To Enter SelfRefresh Mode 1., & with should be low at the same clock cycle. 2. After 1 clock cycle, all the inputs including the system clock can be don't care except for. 3. The device remains in SelfRefresh mode as long as stays "low". 4. Once the device enters SelfRefresh mode, minimum tras is required before exit from SelfRefresh. To Exit SelfRefresh Mode 5. System clock restart and be stable before returning high. 6. Enable and should be set high for valid setup time and hold time. 7. starts from high. 8. Minimum txsr is required after going high to complete SelfRefresh exit cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the system uses burst refresh. 25

26 Figure Clock Suspension During Burst (Using ) (Burst Length=4, Latency=2) CAx Ax0 Ax1 Ax2 Ax3 thz Clock Suspend 1 Cycle Clock Suspend 2 Cycles Clock Suspend 3 Cycles 26

27 Figure Clock Suspension During Burst (Using ) (Burst Length=4, Latency=3) CAx Ax0 Ax1 Ax2 Ax3 thz Clock Suspend 1 Cycle Clock Suspend 2 Cycles Clock Suspend 3 Cycles 27

28 Figure 25. Clock Suspension During Burst (Using ) (Burst Length=4) CAx DAx0 DAx1 DAx2 DAx3 Clock Suspend 1 Cycle Clock Suspend 2 Cycles Clock Suspend 3 Cycles 28

29 Figure 26. Power Down Mode and Clock Suspension (Burst Length=4, Latency=2) tih tis tpde Valid CAx Ax0 Ax1 Ax2 Ax3 thz Power Down Mode Entry ACTIVE STANDBY Power Down Mode Exit Clock Suspension Start Clock Suspension End Power Down Mode Entry PRECHARGE STANDBY Power Down Mode Exit Any 29

30 Figure Random Column (Page within same Bank) (Burst Length=4, Latency=2) RAw RAz RAw CAw CAx CAy RAz CAz Aw0 Aw1 Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay2 Ay3 Az0 30

31 Figure Random Column (Page within same Bank) (Burst Length=4, Latency=3) RAw RAz RAw CAw CAx CAy RAz CAz Aw0 Aw1 Aw2 Aw3 Ax0 Ax1 Ay0 Ay1 Ay2 Ay3 31

32 Figure 28. Random Column (Page within same Bank) (Burst Length=4) RBw RBz RBw CBw CBx CBy RBz CBz DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3 DBz0 DBz1 32

33 Figure Random Row (Interleaving Banks) (Burst Length=8, Latency=2) High RBx RBy RBx CBx CAx RBy CBy trcd tac trp Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7 33

34 Figure Random Row (Interleaving Banks) (Burst Length=8, Latency=3) High RBx RBy RBx CBx CAx RBy CBy trcd tac trp Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7 By0 34

35 Figure 30. Random Row (Interleaving Banks) (Burst Length=8) High RBx RAy CAx RBx CBx RAy CAy trcd twr* trp twr* DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3 *t WR >t WR (min.) 35

36 Figure and Cycle (Burst Length=4, Latency=2) CAx CAy CAz Ax0 Ax1 Ax2 Ax3 DAy0 DAy1 DAy3 Az0 Az1 Az3 The Data is Masked with a Zero Clock Latency The Data is Masked with a Two Clock Latency 36

37 Figure and Cycle (Burst Length=4, Latency=3) CAx CAy CAz Ax0 Ax1 Ax2 Ax3 DAy0 DAy1 DAy3 Az0 Az1 Az3 The Data is Masked with a Zero Clock Latency The Data is Masked with a Two Clock Latency 37

38 Figure Interleaving Column Cycle (Burst Length=4, Latency=2) RBx CAy RBx CBw CBx CBy CAy CBz trcd tac Ax0 Ax1 Ax2 Ax3 Bw0 Bw1 Bx0 Bx1 By0 By1 Ay0 Ay1 Bz0 Bz1 Bz2 Bz3 38

39 Figure Interleaved Column Cycle (Burst Length=4, Latency=3) RBx CAx RBx CBx CBy CBz CAy trcd tac Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 By0 By1 Bz0 Bz1 Ay0 Ay1 Ay2 Ay3 39

40 Figure 33. Interleaved Column Cycle (Burst Length=4) RBw CAx RBw CBw CBx CBy CAy CBz trcd twr twr trrd>trrd (min) DAx0 DAx1 DAx2 DAx3 DBw0 DBw1 DBx0 DBx1 DBy0 DBy1 DAy0 DAy1 DBz0 DBz1 DBz2 DBz3 40

41 Figure Auto after Burst (Burst Length=4, Latency=2) High Begin Auto Begin Auto RBx RBy RAz CAx RBx CBx CAy RBy CBy RAz trp Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3 Ay0 Ay1 Ay2 Ay3 By0 By1 By2 with Auto with Auto precharge with Auto 41

42 Figure Auto after Burst (Burst Length=4, Latency=3) High Begin Auto Begin Auto RBx RBy CAx RBx CBx CAy RBy CBy trp Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3 Ay0 Ay1 Ay2 Ay3 By0 By1 By2 with Auto with Auto with Auto 42

43 Figure 35. Auto after Burst (Burst Length = 4) High Begin Auto Begin Auto RBx RBy CAx RBx CBx CAy RBy CBy tdal DAx0 DAx1 DAx2 DAx3 DBx0 DBx1 DBx2 DBx3 DAy0 DAy1 DAy2 DAy3 DBy0 DBy1 DBy2 DBy3 with Auto with Auto with Auto 43

44 Figure Full Page Cycle (Burst Length=Full Page, Latency=2) High RBx RBy CAx RBx CBx RBy trp Ax Ax+1 Ax+2 Ax-2 Ax-1 Ax Ax+1 Bx Bx+1 Bx+2 Bx+3 Bx+4 Bx+5 Bx+6 The burst counter wraps from the highest order page address back to zero during this time interval Full Page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues Bursting beginning with the starting address Burst Stop 44

45 Figure Full Page Cycle (Burst Length=Full Page, Latency=3) High RBx RBy CAx RBx CBx RBy trp Ax Ax+1 Ax+2 Ax-2 Ax-1 Ax Ax+1 Bx Bx+1 Bx+2 Bx+3 Bx+4 Bx+5 The burst counter wraps from the highest order page address back to zero during this time interval Burst Stop Full Page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues Bursting beginning with the starting address 45

46 Figure 37. Full Page Cycle (Burst Length=Full Page) High RBx RBy CAx RBx CBx RBy DAx DAx+1 DAx+2 DAx+3 DAx-1 DAx DAx+1 DBx DBx+1 DBx+2 DBx+3 DBx+4 DBx+5 Data is ignored The burst counter wraps from the highest order page address back to zero during this time interval Full Page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address Burst Stop 46

47 Figure 38. Byte Operation (Burst Length=4, Latency=2) High CAx CAy CAz L U 0-7 Ax0 Ax1 Ax2 DAy1 Day2 Az1 Az Ax1 Ax2 Ax3 DAy0 DAy1 DAy3 Az0 Az1 Az2 Az3 Upper Byte is masked Lower Byte is masked Upper Byte is masked Lower Byte is masked Lower Byte is masked 47

48 Figure 39. Random Row (Interleaving Banks) (Burst Length=4, Latency=2) High Begin Auto Begin Auto Begin Auto Begin Auto RBu RAu RBv RAv RBw RBu CBu RAu CAu RBv CBv RAv CAv RBw trp trp trp Bu0 Bu1 Bu2 Bu3 Au0 Au1 Au2 Au3 Bv0 Bv1 Bv2 Bv3 Av0 Av1 Av2 Av3 with Auto with Auto with Auto with Auto 48

49 Figure 40. Full Page Random Column (Burst Length=Full Page, Latency=2) RBx RBw RBx CAx CBx CAy CBy CAz CBz RBw trp trrd trcd Ax0 Ax1 Bx0 Ay0 Ay1 By0 By1 Az0 Az1 Az2 Bz0 Bz1 Bz2 ( Temination) 49

50 Figure 41. Full Page Random Column (Burst Length=Full Page) RBx RBw RBx CAx CBx CAy CBy CAz CBz RBw twr trp trrd trcd DAx0 DAx1 DBx0 DAy0 DAy1 DBy0 DBy1 DAz0 DAz1 DAz2 DBz0 DBz1 DBz2 Figure 42. Termination of a Burst (Burst Length=4, 8 or Full Page, Latency=3) ( Temination) Data are masked High RAy RAz CAx RAy CAy RAz twr trp trp DAx0 DAx1 Ay0 Ay1 Ay2 Termination of a Burst Data are masked Termination of a Burst 50

51 Dimension in inch Dimension in mm Symbol Min Nom Max Min Nom Max A A A B C D E e HE L L S y θ Notes: 1. Dimension D&E do not include interlead flash. 2. Dimension B does not include dambar protrusion/intrusion. 3. Dimension S includes end flash. 4. Controlling dimension: mm 51

52 Ball Assignment (Top View) A VSS 15 VSSQ VD 0 9 VDD B VD VSSQ 2 1 C VSSQ VD 4 3 D 10 9 VD VSSQ 6 5 E 8 NC VSS VDD L 7 F U G A12 A11 A9 BA0 BA1 H A8 A7 A6 A0 A1 J VSS A5 A4 A3 A2 VDD 52

53 Figure Ball TFBGA Package Outline Drawing Information TOP View Bottom View Side View 53

54 Symbol Dimension in inch Dimension in mm Min Nom Max Min Nom Max A A A c D E D E e b F

55 ORDERING INFORMATION Alliance Organization VCC Range Package Operating Temp Speed MHz -5TCN 16M x V+/-0.3V 54 TSOP II Commercial 200-6TCN 16M x V+/-0.3V 54 TSOP II Commercial 166-6TIN 16M x V+/-0.3V 54 TSOP II Industrial 166-7TCN 16M x V+/-0.3V 54 TSOP II Commercial 143-7BCN 16M x V+/-0.3V 54 TFBGA Commercial 143-6BIN 16M x V+/-0.3V 54 TFBGA Industrial 166 PART NUMBERING SYSTEM AS4C 16M16S -7 Package C N SDRAM prefix S= SDRAM T = 54 pin TSOP II Temperature Range N = Lead Free Speed RoHS 256Mb (16Mx16) B = 54ball TFBGA C = Commercial compliant part (0-70 C) I = Industrial ( C) 55