2.54 ± Anode mark 3.2 ± 0.5. Anode mark 3.2 ±0.3

Transcription

1 S1ME Series Features 1. Long creepage distance type ( Creepage distance : 8mm or more ). Internal insulation distance :.mm or more 3. Description of approved safety standards ( Lead forming type is also registered as S1ME3/ S1ME4.) Recoginized by UL 177 ( double protection included ) file No. E6438 Approved by VDE, No Approved by BSI ( BS41 : No. 669, BS7 : No. 741 ) Approved by SEMKO S1ME3/ S1ME3F No. 871 S1ME4/ S1ME4F No Approved by DEMKO, No Approved by EI S1ME3/ S1ME3F No S1ME4/ S1ME4F No Low minimum trigger current ( IFT : MAX. 7mA ). Built-in zero-cross circuit (S1ME4/ S1ME4F) 6. Lead forming type/ S1ME3F, S1ME4F ( Distance between lead pins :.16mm ) 7. High repetitive peak OFF-state voltage ( VDRM : MIN. 6V ) 8. High isolation voltage between input and output ( Viso : Vrms ) Applications 1. For triggering medium/high power triac S1ME Series European Safety Standard Approved, Long Creepage Distance Type Phototriac Couplers Lead forming type ( I type) of S1ME series is also available. (S1ME3I/ S1ME4I/ S1ME3FI/ S1ME4FI) Taping reel type (P type ) of S1ME series is also available. (S1ME3P/S1ME4P/S1ME3FP/S1ME4FP) DIN-VDE884 approved type is also available as an option. Outline Dimensions 3. ±. 6 S1ME3 1 3 Anode mark 1. ±.3 Anode mark 3. ±.3 S1ME3 /S1ME4.4 ±. 6 S1ME ±. The S1ME3 and S1ME4 are marked S1ME3 S1ME4 and Zero-cross circuit (S1ME4 ) Internal connection diagram ±. 7.6 ± ±.. ±.1 S1ME3F /S1ME4F.4 ±. 9. ±.. TYP. 3. ±. 6. ±. 1. ±.3 3. ±. 3.6 ±.. ±.1.6 ±.1 θ : to 13 θ 1 3 Zero-cross circuit Internal connection diagram 6 4 (Unit : mm) 1 Anode 3 NC 4 Anode/ No external connection 6 Anode/ The S1ME3F and S1ME4F are marked S1ME3 S1ME4 and Zero-cross circuit (S1ME4F ) 7.6 ±.3.6 ±.1.16 ±. Zero-cross circuit 1 Anode 3 NC 4 Anode/ No external connection 6 Anode/ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.

2 S1ME Series Absolute Maximum Ratings Input Output 1 Hz, sine wave 4 to 6% RH, AC for 1 minute f = 6Hz 3 For seconds Electro-optical Characteristics Input Output Transfer characteristics ( Ta = C) Parameter Symbol Rating Unit Forward current IF ma Reverse voltage VR 6 V RMS ON-state current IT 1 Peak one cycle surge current I surge 1. A Repetitive peak OFF-state voltage VDRM 6 V Isolation voltage Viso Vrms Operating temperature T opr - to + C Storage temperature T stg - to + 1 C 3 Soldering temperature T sol 6 C marms ( Ta = C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward voltage VF IF = ma V Reverse current IR V R =3V A Repetitive peak OFF-state current I DRM VDRM = Rated A ON-state voltage V T IT = ma V Holding current IH V D =6V ma S1ME3 - - Critical rate of rise S1ME3F dv/dt VDRM = 1/ Rated of OFF-state voltage S1ME4 - - S1ME4F V/µ s Zero-cross voltage S1ME4 S1ME4F VOX Resistance load, I F = 1mA V Minimum trigger current I FT V D = 6V, R L = Ω ma Isolation resistance R ISO DCV, 4 to 6% RH x 11 - Ω Turn-on time S1ME3 V D= 6V, R L = Ω, I F = ma - 4 µs S1ME3F t on S1ME4 f = Hz - - 1/ cycle S1ME4F Turn-off time S1ME4 S1ME4F t off f = Hz - - 1/ cycle

3 S1ME Series Fig. 1 RMS ON-state Current vs.. Fig. Forward Current vs. 7 6 (Arms ) T RMS ON-state current I. Forward current IF ( ma ) Fig. 3 Forward Current vs. Forward Voltage Forward current I F ( ma ) T a = 7 C C C C - C Fig. 4 Minimum Trigger Current vs. Minimum trigger current IFT ( ma ) V D =6V R L = Ω S1ME3/3F S1ME4/4F Forward voltage V F (V) Fig. Relative Repetitive Peak OFF-state Voltage vs. Relative repetitive peak OFF-state voltage V DRM ( Tj =Ta )/V DRM ( Tj = C) S1ME3/3F S1ME4/4F Fig. 6 ON-state Voltage vs. T (V) ON-state voltage V S1ME4/4F I T = ma S1ME3/3F

4 S1ME Series Fig. 7 Holding Current vs. Holding current I H ( ma ) Fig. 8-b Repetitive Peak OFF-state Current vs. OFF-state Voltage (S1ME4/S1ME4F ) (A) Repetitive peak OFF-state current I DRM -6-7 T a = C OFF-state voltage V D (V) Fig. 9-b Repetitive Peak OFF-state Current vs. (S1ME4/S1ME4F) DRM (A) Repetitive peak OFF-state current I S1ME4/4F V D = 6V S1ME3/3F V D =6V Fig. 8-a Repetitive Peak OFF-state Current vs. OFF-state Voltage (S1ME3/S1ME3F) (A) Repetitive peak OFF-state current I DRM -9 - T a = C OFF-state voltage V D (V) Fig. 9-a Repetitive Peak OFF-state Current vs. (S1ME3/S1ME3F) Repetitive peak OFF-state current I DRM (A ) Fig. Turn-on Time vs. Forward Current (S1ME3/S1ME3F) Turn-on time t on (µs) V D =6V V D =6V R L = Ω I F = ma 4 Forward current I F ( ma )

5 S1ME Series Fig.11 Zero-cross Voltage vs. (S1ME4/S1ME4F ) Zero-cross voltage VOX (V) R load I F = 1mA Fig.1 ON-state Current vs. ON-state Voltage (S1ME3/S1ME4) T ( ma ) ON-state current I I F = 1mA T a = C ON-state voltage V T ( V) Please refer to the chapter Precautions for Use (Page 78 to 93).

6 Application Circuits NOTICE The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii)measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii)sharp devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). Contact a SHARP representative in advance when intending to use SHARP devices for any "specific" applications other than those recommended by SHARP or when it is unclear which category mentioned above controls the intended use. If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export such SHARP devices. This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 11