synqpsk Univ. Paderborn, Germany; CeLight Israel; Photline, France; IPAG, Germany

Transcription

1 1 Components for Synchronous Optical Quadrature Phase Shift Keying Transmission Contract in FP6 IST Optical, opto-electronic, & photonic functional components synqpsk Univ. Paderborn, Germany CeLight Israel Photline, France IPAG, Germany

2 2 Properties of synchronous optical QPSK (1) Highest OSNR due to 18 photons/bit receiver sensitivity (excluding possible FEC gains), better than DQPSK, DPSK and any other scheme Quadrature phase shift keying: 2 bits / symbol With added polarization division multiplex: 4 bits / symbol. Multiplies total fiber capacity by ~4 with respect to state-of-the art systems. Low symbol rate increases chromatic dispersion and PMD tolerances by factors of ~8 and 3, respectively, over those of standard intensity modulated systems. Evolutionary retrofitting of 40 Gbit/s transponders into existing 10 Gbit/s WDM systems

3 3 Properties of synchronous optical QPSK (2) RZ symbol format makes the system nonlinearity-tolerant (XPM). Coherent optical receiver relaxes optical filtering requirements Electrical received signals are proportional to optical fields Optical signal processing in the electrical domain becomes possible. Chromatic dispersion and polarization mode dispersion can be equalized electronically without any losses.

4 4 Project philosophy Early single-polarization QPSK demonstrations used external cavity lasers, which can not be used in real systems. External cavity lasers are MUCH TOO EXPENSIVE. First (and only) report of synchronous PSK with (standard) DFB lasers: ECOC 1992 synqpsk: Baseband (I&Q) processing, QPSK, polarization division multiplex Concept allows to use off-the-shelf DFB lasers (1...2 MHz linewidth).

5 5 Implementation plan LiNbO 3 optical QPSK modulators LiNbO 3 optical 90 hybrids InP balanced integrated photoreceivers Co-packaging of 90 hybrid and InP photoreceivers Phase noise tolerant carrier recovery scheme Digital implementation for 4 10 Gbit/s, for finest optical signal processing in the electrical domain SiGe and CMOS integrated electrical circuits 4 10 Gbit/s optical testbed with full functionality to be set up synqpsk logo: Projection of 4-dimensional hypercube (2 quadratures, 2 polarizations)

6 6 System and testbed overview DFB TX laser QPSK and RZ modulators, polarization multiplex WDM transmission Common package DFB LO laser 90 hybrids, polarization diversity Balanced photoreceivers SiGe and CMOS integrated electrical circuits

7 7 WP1: QPSK modulator (Photline) optical input electrical input 1 optical output electrical input 2 λ/4 path length difference LiNbO 3 : Lowest loss Monolithic integration of 2 modulators on one chip Path length difference stabilization Further integration possibilities: 2 QPSK modulators, and splitters, for polarization division multiplex, RZ modulator

8 8 WP2: 90 hybrid and front end packaging (CeLight Israel) in phase quadrature Superposition of received and local oscillator optical fields with 0 and 90 phase shifts I&Q baseband processing Co-packaging with IPAG s InP balanced photoreceivers

9 9 WP3: Balanced photoreceivers (IPAG) in phase quadrature Low-noise differential photoreceivers Support a lot of static photocurrent generated by LO power Photodiodes optimized for coupling with LiNbO 3

10 10 WP4: SiGe and CMOS integrated circuits (Univ. Paderborn) 2 Balanced Photoreceivers x polarization 2 Balanced Photoreceivers y polarization I X Q X I Y Q Y SiGe Chip ADC SiGe Chip ADC VCO PLL SiGe Chip ADC SiGe Chip ADC Sampled, digitized and demultiplexed signals CMOS Chip Electronic Polarization Control Phase-noise tolerant Carrier Recovery 4 x 10.7 Gbit/s (Demultiplexed to lower symbol rate)

11 11 WP5: Testbed (Univ. Paderborn) 10.7 Gbit/s PPG CLK Data MDR MDR TX laser RZ modulator PMC QPSK modulator x QPSK modulator y PBS MDR WDM transmission LO laser 90 hybrids, polarization diversity Front ends Balanced photoreceivers SiGe and CMOS integrated electrical circuits BERT 4 x 10.7 Gbit/s (Demultiplexed to lower symbol rate) Automatic electronic polarization control

12 12 Management structure UPb CIL Photline IPAG Organisation, Evaluation, Dissemination Project Coordination Committee Project Coordination (R. Noé, UPb) Technical Progress H. Porte Photline (WP1) R. Bertenburg IPAG (WP3) R. Noé UPb (WP5) Y. Achiam CIL (WP2) U. Rückert UPb (WP4)

13 13 Univ. Paderborn, Germany: Optical Communication and High-Frequency Engineering Founded 1992, headed by Reinhold Noé Presently 13 group members Recent achievements PMD compensation at 10 and 40 Gbit/s Low-cost online chromatic dispersion measurement at 40 Gbit/s by arrival time detection with a sensitivity of 100 attoseconds 10 and 40 Gbit/s transmission setups 110 GHz Network analyzer, 50 GHz oscilloscope, 40 GHz spectrum analyzers,... CAD design facility

14 14 Univ. Paderborn, Germany: System and Circuits Technology Founded 1995, headed by Ulrich Rückert Presently 25 group members Focus: Systematic design and appropriate use of innovative microelectronic systems Resource efficiency High speed CMOS Massively parallel systems CAD design and test facility Rapid prototyping based on the group's RAPTOR2000 system ASIC prototyping in cooperation with the industry participating in the Europractice initiative

15 CeLight Israel 15 Fabrication facilities: Clean rooms Lithium Niobate fabrication Optical measurement Optical characterization Packaging Environmental testing

16 16 Photline, France Photline family of components are designed to enable systems and modules manufacturers to meet the new challenges of the telecom market at 10 & 40 Gbit/s Created end of 2000, Photline has brought to production a family of LiNbO3 modulators in less than 18 months. The product Optical Eye diagram at 40Gb/s

17 17 Photline, France Technological Facilities Photline works in an environment of clean rooms for technological development, and is equipped with all the required laboratories for assembly and testing.

18 IPAG - Innovative Processing AG (Darmstadt/Duisburg, Germany) 18 Products: FP Laser DFB Laser SLEDs Epi-Wafer Material PIN photodetectors Integrated Receivers IPAG fabricates bare die components and modules for applications in telecommunications, medical, defense and sensing nm wavelength - DML up to 10Gbit/s - PINs up to 80GHz - PINs: 125 C operating temp. - monolithic integration with lownoise electronics Copyright 2004, IPAG - Innovative Processing AG. All rights reserved.

19 19 IPAG - Innovative Processing AG Manufacturing Capability Design: simulation tools Epitaxy: 2 x MOVPE DFB grating, sub-micron HEMTs: electron beam lithography Front-end: processing line for FP/DFB laser and PIN chips Back-end: facet coating, dicing, 100% automated testing Reliability: lifetime testing (Telcordia and MIL compliant) IPAG - Innovative Processing AG Lotharstr. 55 D Duisburg Germany Copyright 2004, IPAG - Innovative Processing AG. All rights reserved.

20 synqpsk Univ. Paderborn, Germany CeLight Israel Photline, France IPAG, Germany Components for synchronous optical quadrature phase shift keying transmission 20 DFB TX laser QPSK and RZ modulators, polarization multiplex WDM transmission Common package DFB LO laser 90 hybrids, polarization diversity Balanced photoreceivers SiGe and CMOS integrated electrical circuits