High-Speed Opto-Electronic Components for Digital and Analog RF Systems

Transcription

1 High-Speed Opto-Electronic Components for Digital and Analog RF Systems K. Y. Liou Director Laser Technology & Government Business Multiplex, Inc. WOCC April 23, Hadley Road South Plainfield, NJ USA

2 Active Opto-Electronic Component Solutions for Optical Networks Access Metro Regional Long-Haul (2-10km) (20-40 km) (60-80 km) 80+ km) Custom Design Systems 1550 Transponder 1310 Transponder Tunable EML 980 Pump Laser (EDFA) APD Receiver PIN Receiver 1550 EML (10 Gb/s) 1310 EML (10 Gb/s) 1550 EML (2.5 Gb/s) * 2.5Gb/s application extends to >640 km

3 Electro-absorption Modulated Laser (EML) EA Modulator Section p-ingaas/inp Cap 1E-4 1E-5 10 Gb/s 0 km 50km DFB Laser Section AR 1E-6 1E-7 85km HR Selective-Area MOCVD Grown MQW-SCH InGaAsP Grating n-inp Substrate Fe:InP Blocking BER 1E-8 1E-9 MQW DFB laser and EA modulator 1E-10 1E-11 1E-12 1E-13 1E-14 1E <P> (dbm) Low cost integration by SAG (selective area growth) Fiber packaging same as DFB laser 80-km DWDM transmission Replaces hybrid-packaged Laser-LiNbO3 modulators even for long-haul DWDM

4 Wavelength Tunable EML Wavelength (nm.) 1556

5 From MOCVD Wafer Growth to Subsystems and Fiber Transmission Test

6 Selective Area MOVPE Growth Increased concentration Group III Precursors Enhanced Vapor phase diffusion Surface migration E g > mev( λ 100 nm) µm SiO 2 mask InP Laser Modulator Z (1) Indium rich (compressive strain) MQW inside slot (2) Thicker MQW layers inside the slot (Red shifted)

7 Micro Photo Luminescent Measurement Wavelegnth Offset (nm) Quantum Well Number: 9 Wells 7 Wells 3 Wells Group-III Precursors Vapor-phase diffusion Surface migration SiO 2 mask E g mev z DFB MOD. z Cross-Sectional View During Growth Top View SAG Oxide Width (µm) 20 Calibration of SAG-MOCVD growth Bandgap λ shift by well thickness (and alloy composition, strain) SAG mask design for active (source, modulator, detector) and passive waveguide integration

8 Cross-sectional Transmission Electron Microscopy of MQW and DFB Grating Structure 56.5nm 52.2nm MQW layers Grating 36.9nm 213.1nm 158.7nm 132.6nm

9 10 Gb/s 85km EML Module 1E-4 1E-5 1E-6 1E-7 BER Fiber Transmission Test MTX510EW SN: FZ0091 Date: 3/17/2004 Vc2 = -3.70V Cross % = 47% laser current = 100mA Pmod = 3.67dBm 0 km 50km 85km BER 1E-8 1E-9 1E-10 1E-11 1E-12 1E-13 1E-14 1E <P> (dbm) Laser operating current 100mA, modulated power 3.67dBm Filtered eye diagram of 85km EML module

10 -9 10 Tunable EML (DBR laser+ea modulator) Relative Power (db) Wavelength (µm) BER. 1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 1E-10 1E-11 1E-12 Ch_0; Back to Back Ch_4; Back to Back Ch_9; Back to Back Ch_0; After 50km Ch_4; After 50km Ch_9; After 50km Wavelength tuning characteristics (12 nm range) Fiber transmission test at 50-GHz spaced ITU channels 1E-13 1E Gb/s TEML <P> (dbm) PRBS=2 10Gb/s

11 2.5 Gb/s 640km EML Module Laser operating current 60mA, modulated power 0.07dBm Filtered eye diagram of 640km 2.5 Gb/s EML module Integrated wavelength locker for DWDM

12 The Multiplex Family of EMLs Gen-1 EML Gen-2 EML Gen-3 EML 7-pin with GPO 14-pin butterfly package 21-pin package Industry-standard configuration Qualified to Telcordia GR-468-CORE 30GHz through pin replaces GPO EML driver IC inside package Qualified to Telcordia GR-468-CORE 50GHz RF feedthrough pins G-S-G coplanar 50 Ohms ports Integrated driver IC and wavelength locker

13 High-Speed EMLs Next Generation EML Products 2.5G EML w/wll - Current Product 10G GPO EML w/wll - March/ G Tunable EML w/wll (5nm Tuning Range) - Current Product 10G Tunable EML w/wll (12nm Tuning Range) - Q3/2005 Miniature 10G Tunable EML w/wll - Q3/2005

14 Introducing: Injection Locked Laser Transmitter R&D Team: Multiplex Inc, UC Berkeley, UCSD Sponsored by: DARPA RFLICS

15 Directly Modulated Analog Fiber Optic Links Input Analog Signal Laser Output Analog Signal Direct Modulated Link Modulation Response Increase Efficiency Increase Bandwidth Issues of of Direct Mod Mod Laser Low Low RF RF efficiency Limited bandwidth Nonlinear distortions Modulation Frequency

16 Monolithic Injection Locking Using Two Section DFB Laser I DC Optical Circulator I DC +I RF Master Laser Output Polarization Controller Slave Laser Conventional Optical Injection Locking: Bench Top Master DFB Slave DFB Single laser package No optical isolator / circulator Automatic polarization match and optical alignment Current tuning Environmentally robust New Monolithic Optical Injection Scheme Invented in RFLICS Program

17 Injection-locking by Two-section DFB Laser f SL ) [ GHz ] - f (= f ML Locking Regime of Externally Injection-locked Laser Unlocking Unlocking Unstable Locking Stable Locking Linewidth Enhancement Factor α Asymmetric Stable Locking Range fr Injection Ratio (= Pinj / P out ) [db] Negative Detuning in Monolithic Injection-locked Laser Master Section f Slave Section Frequency No isolator between Master & Slave Section Injection Locked Frequency

18 Monolithic Injection Locking Using Two Section DFB Laser New Monolithic Optical Injection Scheme Invented in RFLICS Program Slave DFB Master DFB Single laser package No optical isolator / circulator Automatic polarization match and optical alignment Current tuning Environmentally robust Integrated master-slave laser on submount with 25Ω termination for direct modulation Fully packaged module with output fiber, optical isolator, master laser power monitor, TEC, RF input port

19 Monolithic Injection-locked laser in 25-GHz fiber-packaged module Response (db) Modulation Response SL 73.8 ma free-running (ML 0 ma) Injection-locked (ML 10 ma) Injection-locked (ML 15 ma) Injection-locked (ML 18.6 ma) Frequency (GHz) 20 GHz Modulation Applied to Slave Laser Red injection locked Blue unlocked

20 Monolithic Injection Locked DFB Laser 2nd Harmonic Distortion (dbc) Modulation Freq. = 9 GHz 20 db Locking Range ML Current (ma) Improved RF modulation linearity Suppression of harmonic distortion Increased spurious-free dynamic range Enhanced modulation bandwidth Enhanced performance without increasing cost by InP-InGaAsP chip integration

21 The Multiplex Family of Receivers Gen-1 Receiver Gen-2 Receiver Gen-3 Receiver PIN PIN and APD versions PIN and APD versions Single Output First with integrated limiting amplifier Co-planar differential outputs Small-form package Ultra-compact surfacemount MSA package Unique Gull-Wing Pins (> 20GHz BW)

22 APD (Avalanche Photodiode) Design Bonding pad Insulator Center junction Charge Layer Guard ring InP Multiplication Region Q-layer InGaAs absorber InP N-contact AR coating Incident light

23 Avalanche Multiplication Electric Field Hole Current M= 8 Hole Electron Incident Light Electron Current

24 APD BER Measurement 1E-4 1E-5 1E-6 BER Measurement RP192DL-R λ=1.55µm; PRBS=2 10Gb/s 25 Deg. C; V_APD=24.14V 75 Deg. C; V_APD=26.60V -10 Deg. C; V_APD=21.84V 1E-7 BER 1E-8 1E-9 1E-10 1E-11 1E-12 1E-13 1E-14 1E <P> (dbm)

25 High-Sensitivity RECEIVERS Next Generation10Gb Receiver Products Ultra High Sensitivity APD Receiver: 2-3 db better sensitivity than the current APD receiver. Sample: Q3/2005; Production Q4/2005 ( Ultra Low Noise Lens APD) Dispersion Compensation Receivers: Optical dispersion compensation + Ultra High Sensitivity APD Receiver Demonstration: Q2/2006

26 The Multiplex Family of Transponders Gen-1 Transponder Gen-2 Transponder Gen-3 Transponder 200-pin MSA 300-pin MSA 300-pin MSA Flat-Top MSA small-form-factor: 2 x 3 x 0.5 MSA small-form-factor: 2.2 x 3 x 0.56 Ability to mount customerdesigned external heat sink 1310 or 1550nm EML PIN and APD versions DWDM ITU wavelength locked (stabilized) Tunable over 16 channels PIN and APD versions SR-1, SR-2, IR-1, IR-2 and LR-2

27 The Power of Vertical Integration 1310 EML 1550 EML TEML PIN APD 2km TXPR (1310) 40km TXPR (1550) Tunable TXPR (1550) 80km TXPR (1550) 40km TXPR (1310, dispersion free) 80km Tunable TXPR (1550)

28 Core Technology Building Blocks Technology: Custom-Design Systems Subsystems Modules Chips MOCVD growth & Processing Vertical Integration Expertise: INTEGRATION Packaging and Assembly RF Design Optical Design IC Design APD PIN EML TEML PUMP EPI-Wafer Growth & Chip Processing Expanding Products: Custom Systems Transponders Tunable EMLs Pump Combiner EMLs Receivers Pump Chips Foundry Services

29 Multiplex Proprietary Information Multiplex Facilities Corporate Headquarters & Front-End Manufacturing - MOCVD wafer growth - Chip fabrication - Administration Back-End Manufacturing - Module packaging - Subsystem Assembly High-Speed Design Center Facilities are located in South Plainfield, New Jersey

30 Multiplex, Inc. Beijing Office 3001 Bldg.4, Xian Dai City 88 Jian Guo Road, Chao Yang District Beijing, China Tel: 北京市朝阳区建国路 88 号现代城 4 号楼 3001 室