Fixed Resistors CONTENTS

Transcription

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2 Fixed esistors CONTENTS Classifi cation Product Item Page Safety Precautions (Common precautions for Fixed esistors) Chip esistors High Precision Current Sensing Thick Film Chip esistors E XG, G, G, G, 6G, 8G, 4,, Z, T Precision Thick Film Chip esistors E XG, G,,,, 6, E, 6E, 8E, 4,, T 5 Metal Film (Thin Film) Chip esistors, High eliability Type Thick Film Chip esistors / ow Type EA A, A, A, 6A, 8A 8 E,, B, B, 6B, 8B, 4B, 8C,, 6, 8, 4, E Z, T,, 6, 8, 4,, D, Current Sensing esistors, Metal Plate Type E MS4S, MS4H, MS6S 4 Current Sensing esistors, Metal Plate Type E MS, MT 8 Surface Mount esistors Power Type esistors (eaded) Small&High Power Anti-Sulfurated esistor Network/Array Common specifi cations Fusing esistors High Power Chip esistors / ide Terminal Type E A, B, B, B Anti-Surge Thick Film Chip esistors E P, PA, P6, P8, P4 Anti-Pulse Thick Film Chip esistors E T6, T8, T4 5 Anti-Sulfurated Thick Film Chip esistors Anti-Sulfurated High Power Chip esistors / ide Terminal Type Chip esistor Array E S, S, S6, S8, S4, S, SD, ST E U, U, U, U6, U8, U4, U, UD, UT E U6S, U6Q E C EXB 4V, 8V, 4V, 8V, N8V, HV, 4V, V4V, 8V, V8V, S8V Metal Film Chip esistor Array EA8V 5 Anti-Sulfurated Chip esistor Array EXB U, U 7 Chip esistor Networks EXB D, E, A, Q 9 Chip Attenuator EXB 4AT, 4AT 4 Packaging Methods (Taping) 4 ecommended and Pattern 47 ecommended Soldering Conditions 49 Safety Precautions (Common precautions for Surface Mount esistors) 5 Metal (Oxide) Film esistors, Flame-etardant EG S, S, F, S, F, S, F, 5S, 5F EX S, S, F, S, F, S, F, 5S, 5F Anti-Pulse Power esistors EG D, D, D, D 58 Metal Film esistors / ow Value EX,, 6 Metal Film Fusing esistors EQ Z, Z, Z, 4Z EQ AB, AB, A, 4A Fixed esistors Appendix All products in this catalog comply with the ohs Directive. The ohs Directive is the Directive (/65/EU) on the estriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment and its revisions. an. 5

3 Safety Precautions (Common precautions for Fixed esistors) hen using our products, no matter what sort of equipment they might be used for, be sure to make a written agreement on the specifications with us in advance. The design and specifications in this catalog are subject to change without prior notice. Do not use the products beyond the specifications described in this catalog. This catalog explains the quality and performance of the products as individual components. Before use, check and evaluate their operations when installed in your products. Install the following systems for a failsafe design to ensure safety if these products are to be used in equip ment where a defect in these products may cause the loss of human life or other significant dam age, such as damage to vehicles (automobile, train, vessel), traffic lights, medical equipment, aerospace equipment, electric heating appliances, combustion/gas equipment, rotating equipment, and disaster/crime prevention equipment. Systems equipped with a protection circuit and a protection device Systems equipped with a redundant circuit or other system to prevent an unsafe status in the event of a sin gle fault () Precautions for use These products are designed and manufactured for general and standard use in general elec tron ic equipment (e.g. AV equipment, home electric appliances, office equipment, information and communication equipment) These products are not intended for use in the following special conditions. Before using the products, carefully check the effects on their quality and performance, and determine whether or not they can be used.. In liquid, such as water, oil, chemicals, or organic solvent. In direct sunlight, outdoors, or in dust. In salty air or air with a high concentration of corrosive gas, such as Cl, H S, NH, SO, or NO 4. Electric Static Discharge (ESD) Environment These components are sensitive to static electricity and can be damaged under static shock (ESD). Please take measures to avoid any of these environments. Smaller components are more sensitive to ESD environment. 5. Electromagnetic Environment Avoid any environment where strong electromagnetic waves exist. 6. In an environment where these products cause dew condensation 7. Sealing or coating of these products or a printed circuit board on which these products are mounted, with resin or other materials These products generate oule heat when energized. Carefully position these products so that their heat will not affect the other components. Carefully position these products so that their temperatures will not exceed the category temperature range due to the effects of neighboring heat-generating components. Do not mount or place heat-generating components or inflammables, such as vinyl-coated wires, near these products. Note that non-cleaning solder, halogen-based highly active flux, or water-soluble flux may deteriorate the performance or reliability of the products. Carefully select a flux cleaning agent for use after soldering. An unsuitable agent may deteriorate the performance or reliability. In particular, when using water or a water-soluble cleaning agent, be careful not to leave water residues. Otherwise, the insulation performance may be deteriorated. () Precautions for storage The performance of these products, including the solderability, is guaranteed for a year from the date of ar riv al at your company, provided that they remain packed as they were when delivered and stored at a tem per a ture of 5 C to 5 C and a relative humidity of 45 % to 85 %. Even within the above guarantee periods, do not store these products in the following conditions. Otherwise, their electrical performance and/or solderability may be deteriorated, and the packaging materials (e.g. taping materials) may be deformed or deteriorated, resulting in mounting failures.. In salty air or in air with a high concentration of corrosive gas, such as Cl, H S, NH, SO, or NO. In direct sunlight This is all for the common precautions. Also refer to the "CAUTION AND ANING" section located on the back of the front cover of this catalog and precautions for individual products shown in the sub se quent pages. <Package markings> Package markings include the product number, quantity, and country of origin. In principle, the country of origin should be indicated in English. Sep. 4

4 Thick Film Chip esistors Thick Film Chip esistors Type: E XG, G, G, G, 6G, 8G, 4,, Z, T Features Small size and lightweight High reliability Metal glaze thick fi lm resistive element and three layers of electrodes Compatible with placement machines Taping packaging available Suitable for both refl ow and fl ow sol der ing eference Standards IEC 65-8, IS C 5-8, EIA C-4B AEC-Q qualifi ed (Exemption EXG) ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers EXGN, GN, GE, GE, 6GE, 8GE, 4,, Z, T Type, ±5 % E G E Y V Product Thick Film Chip esistors Size, Power ating Inch XGN GN GE GE 6GE 8GE 4 Z T Power Y Nil Marking Marking Value Marking on black side No marking Tolerance Value Tolerance ±5 % umper The first two digits are significant figures of resistance and the third one denotes number of zeros following. Decimal Point is expressed by as 4.7 = 47. umper is expressed by. hen omitted, the rest of the P/N factors shall be moved up respectively. (Only XGN, GN, GE type) Y U C X Y V U Packaging Methods Packaging Pressed Carrier Taping 8P,, pcs. Embossed Carrier Taping 4P, 4, pcs. Pressed Carrier Taping mm pitch, 5, pcs. Punched Carrier Taping mm pitch,, pcs. Punched Carrier Taping mm pitch,, pcs. Punched Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 4, pcs. EXGN EGN EGE EGE E6GE E8GE E4 E EZ ET 4 Sep. 4

5 Thick Film Chip esistors Construction Protective coating Dimensions in mm (not to scale) a Alumina substrate Electrode (Inner) t b Thick film resistive element Electrode (Between) Electrode (Outer) (inch size) EXG (5) EG () EG (4) EG (6) E6G (85) E8G (6) E4 () E (8) EZ () ET (5) a b t Mass (eight) (g/ pcs.).4 ±.. ±.. ±.. ±.. ±..4.6 ±.. ±.. ±.5.5 ±.5. ±..5. ±.5.5 ±.5. ±..5 ±.5.5 ± ± ±.. ±.5.45 ±.. ±..5 ±..4 ±..4 ±..6 ± ±..5 ±..6 ±.. ±..5 ±..5 ±..5 ±..6 ± ±.. ±..5 ±..5 ±..6 ± ±..5 ±..6 ±..6 ±..6 ± ±.. ±..65 ±..6 ±..6 ±. 45 atings [For esistor] (inch size) EXG (5) EG () EG (4) EG (6) E6G (85) E8G (6) E4 () E (8) EZ () ET (5) Power ating at 7 C () imiting Element Voltage () (V) Maximum Overload Voltage () (V) Tolerance (%) ange (Ω). 5 ±5 4.7 to M (E4) T.C.. ( 6 / C) < Ω : to +6 Ω to Ω : ± Ω< : ± Category Temperature ange ( C) 55 to ±5 to M (E4) 55 to ±5 to M (E4) < Ω: to to ±5 to M (E4) 55 to ±5 to M (E4) 55 to +55 Ω to MΩ:.5 4 ±5 to M (E4) ± 55 to ±5 to M (E4) 55 to ±5 to M (E4) 55 to ±5 to M (E4) MΩ<: 4 to to ±5 to M (E4) 55 to +55 () ated Continuous orking Voltage (CV) shall be de ter mined from CV= Power ating e sis tance Values, or imiting Element Voltage list ed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be de ter mined from SOTV=.5 (Only EG=.) Power ating or max. Over load Volt age list ed above which ev er less. [For umper] (inch size) EXG (5) EG () EG (4) EG (6) E6G (85) E8G (6) E4 () E (8) EZ () ET (5) ated Current (A) Maximum Over load Current (A).5 4 Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure below. 55 C C 4 XG, G 55 C 5 C Ambient Temperature ( C) ated oad (%) G, G, 6G, 8G, 4,, Z, T 4 4 Sep. 4

6 Precision Thick Film Chip esistors Precision Thick Film Chip esistors Type: E XG, G E,,, 6 E E, 6E, 8E, 4,, T Features Small size and lightweight High reliability Metal glaze thick fi lm resistive element and three layers of electrodes Compatible with placement machines Taping packaging available Suitable for both refl ow and fl ow soldering ow Tolerance EXG, G,, E, 6E, 8E, 4,, T Type : ± % E,,, 6 Type : ±.5 % eference Standards IEC 65-8, IS C 5-8, EIA C-4B AEC-Q qualifi ed (Exemption EXG, E) ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E,,, 6 Type, ±.5 % E B D V Product Thick Film Chip esistors Size, Power ating 6 Inch Power H B K E T.C.. Marking T.C.. ±5 6 / C (, ) ±5 6 / C (, 6) ± 6 / C () ± 6 / C (, 6) Tolerance D Tolerance ±.5 % C X V Packaging Methods Packaging Pressed Carrier Taping mm pitch, 5, pcs. Punched Carrier Taping mm pitch,, pcs. Punched Carrier Taping 4 mm pitch, 5, pcs. E E E E6 Value The first three digits are significant figures of resistance and the last one denotes number of zeros following. Example: kω 5 5 Sep. 4

7 Precision Thick Film Chip esistors EXG, G,, E, 6E, 8E, 4,, T Type, ± % E 8 E N F V Product Thick Film Chip esistors XGN GN K EK 6EN 8EN 4N N S TN Size, Power ating Inch Power Tolerance F Tolerance ± % Value The first three digits are significant figures of resistance and the last one denotes number of zeros following. Decimal point is expressed by "". Example : kω Y C X V U Packaging Methods Packaging Pressed Carrier Taping mm pitch,, pcs. EXGN Pressed Carrier Taping mm pitch, 5, pcs. EGN Punched Carrier Taping mm pitch,, pcs. EK Punched Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 4, pcs. EEK E6EN E8EN E4N EN ES ETN Construction Dimensions in mm (not to scale) a Protective coating t Alumina substrate Thick film resistive element Electrode (Inner) Electrode (Between) Electrode (Outer) (inch size) EXG (5) EG, () E (4) E EEK (6) E6 E6EN (85) E8EN (6) E4N () EN (8) ES () ETN (5) b a b t Mass (eight) [g/ pcs.].4 ±.. ±.. ±.. ±.. ±..4.6 ±.. ±.. ±.5.5 ±.5. ±..5. ±.5.5 ±.5. ±..5 ±.5.5 ± ± ±.. ±.5.45 ±.. ±..5 ±..4 ±..4 ±..6 ± ±..5 ±..6 ±.. ±..5 ±..5 ±..5 ±..6 ± ±.. ±..5 ±..5 ±..6 ± ±..5 ±..6 ±..6 ±..6 ± ±.. ±..65 ±..6 ±..6 ± Sep. 4

8 Precision Thick Film Chip esistors atings <±.5 %> (inch size) Power ating at 7 C () imiting Element Voltage () (V) Maximum Overload Voltage () (V) Tolerance (%) ange (Ω) T.C.. ( 6 / C) Category Temperature ange ( C) EH ().5 5 ±.5 k to M (E4, E96) ±5 55 to +5 EH (4) EK (4) EB (6) EE (6) E6B (85) E6E (85).6 5 ± ±.5. 5 ±.5. 5 ±.5. 5 ±.5. 5 ±.5 to k (E4, E96) to 97.6 k to M (E4, E96) to k (E4, E96) to 97.6 k to M (E4, E96) to k (E4, E96) to 97.6 k to M (E4, E96) ±5 55 to +5 ± 55 to +5 ±5 55 to +5 ± 55 to +5 ±5 55 to +5 ± 55 to +5 <± %> (inch size) EXGN (5) EGN () EK (4) EEK (6) E6EN (85) E8EN (6) E4N () EN (8) ES () ETN (5) Power ating at 7 C () imiting Element Voltage () (V) Maximum Overload Voltage () (V) Tolerance (%). 5 ± ±. 5 ± ±.5 5 ±.5 4 ±.5 4 ±.75 5 ±.75 5 ± 5 ± ange (Ω) to M (E4, E96) to M () (E4, E96) to M () (E4, E96) to M (E4, E96) to. M (E4, E96) to. M (E4, E96) to M (E4, E96) to M (E4, E96) to M (E4, E96) to M (E4, E96) T.C.. ( 6 / C) < Ω : ± Ω < : ± Category Temperature ange ( C) 55 to +5 ± 55 to +5 ± 55 to +55 ± 55 to +55 ± 55 to +55 ± 55 to +55 ± 55 to +55 ± 55 to +55 ± 55 to +55 ± 55 to +55 () ated Continuous orking Voltage (CV) shall be de ter mined from CV= Power ating e sis tance Values, or imiting Element Voltage list ed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be de termined from SOTV=.5 (Only EK ±% =.) Power ating or max. Over load Volt age list ed above whichever less. () Please contact us when you need a type with a resistance of less than Ω. Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C C K, E, 6E, 8E, 4,, T XG, G,, H, K,, 6 5 C 55 C Ambient Temperature ( C) 5 7 Sep. 4

9 Metal Film (Thin Film) Chip esistors, High eliability Type Metal Film (Thin Film) Chip esistors, High eliability Type Type: EA A, A, A, 6A, 8A Features High reliability... Stable at high temperature and humidity (85 C 85 %H rated load, Category temperature range : 55 to +55 C) High accuracy... Small resistance tolerance and Temperature Coeffi cient of High performance... ow current noise, excellent linearity eference Standard... IEC 65-8, IS C 5-8, EIA C-B AEC-Q qualifi ed ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E4 Series E A A E B V Product Metal Film Chip esistors Size, Power ating Inch A A A 6A 8A Power ating Temperature Coefficient T.C.. ± 6 / C P ±5 6 / C E ±5 6 / C H ±5 6 / C K ± 6 / C Tolerance B C D Tolerance ±.5 % ±. % ±.5 % ±.5 % C X V Packaging Methods Packaging Pressed Carrier Taping mm pitch, 5 pcs. Punched Carrier Taping mm pitch, pcs. Punched CarrierTaping 4 mm pitch, 5 pcs. EAA EAA EAA EA6A EA8A Value Consist of three figures for E4 series resistance value. The first two digits are significant figures of resistance and the third one denotes number of zeros following. (example) : kω E96 Series and other values E A A E B 5 V Product Metal Film Chip esistors Size, Power ating Inch A A A 6A 8A Power ating Temperature Coefficient T.C.. ± 6 / C P ±5 6 / C E ±5 6 / C H ±5 6 / C K ± 6 / C Tolerance B C D Tolerance ±.5 % ±. % ±.5 % ±.5 % C X V Packaging Methods Packaging Pressed Carrier Taping mm pitch, 5 pcs. Punched Carrier Taping mm pitch, pcs. Punched CarrierTaping 4 mm pitch, 5 pcs. EAA EAA EAA EA6A EA8A Value Consist of four figures for E96 series resistance value. The first three digits are significant figures of resistance and the fourth one denotes number of zeros following. (example) 5 :.5 kω note : Duplicated resistance values as E4 series part numbers shall follow E4 part numbers. (apply three digit resistance value) 7 8 Sep. 4

10 Metal Film (Thin Film) Chip esistors, High eliability Type Construction Protective coating Dimensions in mm (not to scale) a Alumina substrate Electrode (Inner) t b High reliability metal film Electrode (Between) Electrode (Outer) (inch size) EAA () EAA (4) EAA (6) EA6A (85) EA8A (6) a b t Mass (eight) [g/ pcs.].6 ±.. ±..5 ±.5.5 ±.5. ±..4. ± ±..5 ±..5 ± ±..8 ±.. ±.. ±..45 ±.. ±..5 ±..4 ±.5.4 ±.5.5 ±. 4. ± ±.5.5 ±.5.6 ±. 8 atings (inch size) EAA () EAA (4) EAA (6) EA6A (85) EA8A (6) Power ating at 85 C () imiting Element Voltage () (V) Maximum Overload Voltage () (V) (detail) Tolerance (%) T.C.. ( 6 / C) ange ()(4) (Ω) EAAEB ±. ±5 to k (E4, E96) EAAEC ±.5 EAAKD ±.5 ± to 46.4 (E4, E96) EAAED ±.5 ±5 47 to k (E4, E96) EAAEB ±. EAAPB ±. ±5 to 47 k (E4, E96) EAAC ±.5 ± to 47 k (E4, E96) EAAB ±. EAAHD ±.5 ±5 to 46.4 (E4, E96) EAAED ±.5 ±5 47 to k (E4, E96) EAAEB ±. EAAPB ±. ±5 47 to k (E4, E96) EAAB ±. ± k to k (E4, E96) EAA ±.5 EA6AHD ±.5 ±5 to 46.4 (E4, E96) EA6AED ±.5 ±5 47 to M (E4, E96) EA6AEB ±. EA6APB ±. ±5 47 to k (E4, E96) EA6AB ±. ± k to k (E4, E96) EA6A ±.5 EA8AHD ±.5 ±5 to 46.4 (E4, E96) EA8AED ±.5 ±5 47 to M (E4, E96) EA8AEB ±. EA8APB ±. ±5 47 to k (E4, E96) EA8AB ±. ± k to k (E4, E96) EA8A ±.5 Category Temperature ange ( C) 55 to +55 () ated Continuous orking Voltage (CV) shall be de ter mined from CV= ated Power e sis tance Values, or imiting Element Voltage list ed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be de termined from SOTV=.5 Power ating or max. Over load Volt age list ed above which ev er less. () E9 series resistance values are also available. Please contact us for details. (4) Duplicated resistance values between E96, E9 and E4 series shall follow E4 Part Numbers. (apply three digit resistance value) Power Derating Curve For resistors operated in ambient temperatures above 85 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 85 C C Ambient Temperature ( C) 7 9 Sep. 4

11 Thick Film Chip esistors / ow Type Thick Film Chip esistors / ow Type Type: E, B, B, 6B, 8B, 8C E B, B, 6B, 8B, 4B,, 6, 8, 4,, Z, T E, 6, 8, 4,, D, Features Current Sensing resistor Small size and lightweight High reliability : Metal glaze thick fi lm resistive element and three layers of electrodes Suitable for both refl ow and fl ow sol der ing Improved high-power/resistance to pulse characteristics by double-sided resistive elements structure : E,,B, B, 6B, 8B, 8C ow TC : ±5 6 / C (E8C) ow Value 5 mω, mω : E mω : E mω to 5 mω : E8C mω to mω : E6B, 8B mω to mω : EB, E4, 4 mω to mω : ED, 47 mω to mω : EB, E, 6, 8 eference Standards : IEC 65-8, IS C 5-8, EITA C-44 AEC-Q qualifi ed ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E,, B, B, 6B, 8B, 8C <High power (double-sided resistive elements structure) type> E B G 4 7 X Product Thick Film Chip esistors B B 6B 8B 8C Inch Power ating Value mω 5 mω, mω 47 mω to mω mω to mω mω to mω mω to mω mω to 5 mω Tolerance F G Tolerance ± % ± % ± 5 % Value Shown by 4 digits or letters. (Ex.) 47 :.47 Ω=47 mω Packaging Methods Packaging X V Pressed Carrier Taping mm pitch,, pcs. Punched Carrier Taping 4 mm pitch, 5, pcs. E EB E EB E6B E8B E8C 8 Oct. 4

12 Thick Film Chip esistors / ow Type EBS/BQ, BS/BQ, 6BS/6BQ, 8BS/8BQ, 4BS/4BQ,, 6, 8, 4,, Z, T <High power type/standard type> E 8 Q F V Product Thick Film Chip esistors Size, Power ating Type Inch Power. B B 6 6B 8 8B 4 4B Z T S Q Value es. Value. Ω to. Ω. Ω to 9. Ω B :. Ω to. Ω Tolerance F G Tolerance ± % ± % ± 5 % Value Shown by digits or letters. (Ex.) :. Ω Packaging Methods Packaging X V U Punched Carrier Taping mm pitch,, pcs. Punched Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 4, pcs. EB E/B E6/6B E8/8B E4/4B E EZ ET E, 6, 8, 4,, D, <ow TC type> E 4 K 5 M U Product Thick Film Chip esistors Size, Power ating Type Inch Power D es. Value Std. K mω, mω, mω, ( ) 9 mω, mω 47 mω, 5 mω, U mω to mω, 6, 8 : 47 mω to mω D, : 4 mω to mω Tolerance F Tolerance ± % ± 5 % Value Shown by digits or letters. (Ex.) 5 M:5 mω, C: mω V U Packaging Methods Packaging Punched Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch,, pcs. E E6 E8 E4 E ED E atings <High power (double-sided resistive elements structure) type> Power ating () Category at 7 C Tolerance ange T.C.. (inch size) () (%) (Ω) ( 6 Temperature ange / C) ( C) E (4). ±, ±, ±5 m to 5 55 to +5 5 m to 7 55 to +5 E (6).5 ±, ±, ±5 m to 55 to +5 EB (4).5 ±, ±, ±5 47 m to m (E4) ± 55 to +55 EB (6). ±, ±, ±5 m to m (E4) E6B (85).5 ±, ±, ±5 m to m (E4) E8B (6) ±, ±, ±5 m to m (E4) () Please contact us when resistors of irregular series are needed. <9m Ω : ±5 >9m Ω : ±5 <5m Ω : ± >5m Ω : ± mω < < mω : ± mω < < 47 mω : ±5 47 mω < < mω : ± E8C (6) ±, ±, ±5 m to 5 m (E4) ±5 55 to to to to +55 ( m to mω) 55 to +5 (6 m to 5 mω) 9 Nov. 4

13 Thick Film Chip esistors / ow Type atings <High power type> (inch size) Power ating at 7 C () Tolerance (%) () ange (Ω) T.C.. ( 6 / C) EBS (4). to. (E4) ±.66 ±, ±, ±5 EBQ (4). to. (E4) ±5 EBS (6). to. (E4) ±.5 ±, ±, ±5. to.9 (E4) EBQ (6). to 9. (E4) ± E6BS (85). to. (E4) ±5. ±, ±, ±5. to.9 (E4) E6BQ (85). to 9. (E4) ± E8BS (6). to. (E4) ±5.5 ±, ±, ±5. to.9 (E4) E8BQ (6). to 9. (E4) ± E4BS (). to. (E4) ±.5 ±, ±, ±5. to.9 (E4) E4BQ (). to 9. (E4) ± () Please contact us when resistors of irregular series are needed. Category Temperature ange ( C) 55 to to to to to +5 <Standard type> (inch size) ES (6) EQ (6) E6S (85) E6Q (85) E8S (6) E8Q (6) E4S () E4Q () ES (8) EQ (8) EZS () EZQ () ETS (5) ETQ (5) Power ating at 7 C () Tolerance (%). ±, ±, ±5.5 ±, ±, ±5.5 ±, ±, ±5.5 ±, ±, ±5.5 ±, ±, ±5.5 ±, ±, ±5 ±, ±, ±5 ange (Ω). to. (E4). to.9 (E4) T.C.. ( 6 / C) ±. to 9. (E4) ±. to. (E4) ±5. to.9 (E4). to 9. (E4) ±. to. (E4) ±5. to.9 (E4). to 9. (E4) ±. to. (E4) ±. to.9 (E4). to 9. (E4) ±. to. (E4) ±. to.9 (E4). to 9. (E4) ±. to. (E4) ±. to.9 (E4). to 9. (E4) ±. to. (E4) ±. to.9 (E4). to 9. (E4) ± Category Temperature ange ( C) 55 to to to to to to to +5 <ow TC type> (inch size) Power ating at 7 C () Tolerance (%) () ange (Ω) T.C.. ( 6 / C) Category Temperature ange ( C) E (6). ±, ±5 47 m to m ± 55 to +5 E6 (85).5 ±, ±5 47 m to m ± 55 to +5 E8 (6). ±, ±5 47 m to m ± 55 to +5 E4 (). ±, ±5 m to m 55 to +5 E (8).5 ±, ±5 m to m <47 mω : ± 55 to +5 ED ().5 ±, ±5 4 m to m >47 mω : ± 55 to +5 E (5) ±, ±5 4 m to m 55 to +5 () Standard.V. : mω, mω, mω, 9 mω, 47 mω, 5 mω, mω, Custom.V. : Each mω within upper range. 9 Nov. 4

14 Thick Film Chip esistors / ow Type Construction Protective coating Alumina substrate Thick film resistive element Electrode (Inner) Electrode (Between) Electrode (Outer) Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure below. ated oad (%) 55 C 8 7 C 6 B, B 4 6B, 8B 55 C 5 C Ambient Temperature ( C) Dimensions in mm (not to scale) (inch size) a b t Mass(eight) [g/ pcs.] E (4). ± ±..5 ±..4 ± EB (4). ± ±..4 ±..5 ±.5.8 EBS (4) EBQ. ± ±..7 ±..5 ± t b a E (6).6 (5 mω).8 ±.5.5 ±..5 ±..55 ± E ( mω) (6).6 ±.5.8 ±.5.4 ±..4 ±..55 ± EB E EB (6).6 ± ±.. ±.5.45 ±. E E6B (85). ±..5 ±..55 ±..55 ±..65 ±. 6 E6 E6B (85). ±..5 ±..4 ±..4 ±..6 ±. 4 E6 E8B (6). ±..6 ±.. ±.. ±..65 ±. E8C ( to 6 mω). ±..6 ±.. ±.. ±..65 ±. E8C (8 to 5 mω). ±..6 ±..6 ±..6 ±..65 ±. E8 E8B (6) ±..5 ±..6 ±. E8 E4 E4B (). ±..5 ±..5 ±..5 ±..6 ±. 6 E4 E (8) E 4.5 ±.. ±..5 ±..5 ±..6 ±. 7 EZ () ED 5. ±..5 ±..6 ±..6 ±..6 ±. 7 ET (5) E 6.4 ±.. ±..65 ±..6 ±..6 ± ±.. ±..65 ±.. ±.. ± Nov. 4

15 Current Sensing esistors, Metal Plate Type Current Sensing esistors, Metal Plate Type Type: E MS4, MS6 Features Ideal for current sensing solution Small case size with high power Metal plate bonding technology. Excellent long term stability Outer esin with high heat dissipation. ide temperature range (-65 C to +7 C) AEC-Q qualifi ed ohs compliant As for Packaging Methods, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E M S 4 S F M U Product Type Tolerance Value Packaging Methods Metal Plate Tolerance Packaging Chip esistors F ± % S4S S4H S6S Inch size Electrode type Standard Narrow Standard Shown by digits or letters.decimal point is expressed by M as. mω=m,.5 mω=m5,. mω= U Embossed Carrier Taping 4 mm pitch,, pcs. Embossed Carrier Taping 8 mm pitch,, pcs. EMS4 EMS6 atings (inch size) EMS4S (5) EMS4H (5) EMS6S (56) Power ating at 7 C () ange (mω) Tolerance (%) T.C.. ( 6 / C) Category Temperature ange ( C) Terminal temp. upper limit ( C),,, 4 F : ± ±75 65 to +7 5, 6 F : ± ±75 65 to +7 7, 8, 9, F : ± ±75 65 to ,, F : ± ±75 65 to +7 Please contact us when resistors of irregular series are needed. Power Derating Curve If the terminal temperature of the resistor is more than terminal temperature upper limit value of the rated table, please reduce the rated power according to the Power Derating Curve shown in the figure on the right. <Supplemented> In the case of the temperature measurement of the terminal portion of the resistor, Please perform under the following conditions. ) Tarminal temperature measurement, please apply the temperature of the higher of either the left or right electrode upper surface of the resistor. ) Please measure the temperature of the resistor in the land pattern printed of circuit board and plan to use by real conditions. ated oad (%) EMS4H (7 to mω) C C Terminal Temperature ( C) 7 C 4 Sep. 4

16 Current Sensing esistors, Metal Plate Type Construction Protective Film Surface Treatment (Ni/Sn) Electrode (Metal) esistive Element (Metal Plate) Dimensions in mm (not to scale), ecommended and Pattern EMS4S EMS4H EMS6S t t t A A A b b b c a c a c a and Pattern (inch size) EMS4S (5) EMS4H (5) EMS6S (56) Dimension (mm) ecommended and Pattern (mm) Mass (eight) (g/ pcs.) A t a b c 6.4±.5.±.5.±.5.± ±.5.±.5.5±.5.± ±.5 6.8±.5.±.5.± Sep. 4

17 Current Sensing esistors, Metal Plate Type Typical Temperature dependence of electrical resistance Change of (%) Temperature ( C) ong-term stability Change of (%) EMS4SFMU 4 C est Time (hrs) Maximum pulse energy respectively pulse power for continuous operation EMS4 type Pulse Energy () EMS4S mω EMS4H 5 mω. Power (). EMS4H mω Pulse width (s) eferance Data Condition : oom Temperature, OFF : s, cycle, ave form : Square Change of =± % EMS6 type EMS6S.5 mω EMS6S mω Pulse Energy () EMS6S mω. Power () Pulse width (s) eferance Data Condition : oom Temperature, OFF : s, cycle, ave form : Square Change of =± % 6 Sep. 4

18 Current Sensing esistors, Metal Plate Type Performance (AEC-Q) EMS4 type Test Item Test Condition Specification Typical value Thermal Shock MI-STD- method 7 (-55 C / +5 C, 5 cycle) ±.5 %.5 % Overload MI--6E (5 x rated power, 5 sec) ±.5 %. % Solderability MI-STD- method 8 > 95% coverage > 95% coverage to Solvents MI-STD- method 5,.a,.d No damage No damage ow Temperature Storage and Operation MI-STD-6E (-65 C, 4 h) ±.5 %. % to Soldering Heat MI-STD- method (6 C, s) ±.5 %. % Moisture MI-STD- method 6 ±.5 %. % Shock MI-STD- method -A ±.5 %. % Vibration, High Frequency MI-STD- method 4-B ±.5 %.5 % ife MI-STD-6E (ated Power,.5 h-on,.5 h-off, h) ± %. % Storage ife at Elevated Temperature MI-STD- method 8-F (7 C, h) ± %. % High Temperature Characteristics 4 C, h ±.5 %.5 % Frequency Characteristics Inductance < nh < nh EMS6 type Test Item Test Condition Specification Typical value Thermal Shock MI-STD- method 7 (-55 C / +5 C, 5 cycle) ±.5 %. % Overload MI--6E (5 x rated power, 5 sec) ±.5 %. % Solderability MI-STD- method 8 > 95% coverage > 95% coverage to Solvents MI-STD- method 5,.a,.d No damage No damage ow Temperature Storage and Operation MI-STD-6E (-65 C, 4 h) ±.5 %. % to Soldering Heat MI-STD- method (6 C, s) ±.5 %. % Moisture MI-STD- method 6 ±.5 %. % Shock MI-STD- method -A ±.5 %. % Vibration, High Frequency MI-STD- method 4-B ±.5 %.5 % ife MI-STD-6E (ated Power,.5 h-on,.5 h-off, h) ± %. % Storage ife at Elevated Temperature MI-STD- method 8-F (7 C, h) ± %. % High Temperature Characteristics 4 C, h ±.5 %.5 % Frequency Characteristics Inductance < nh < nh Temperature ise EMS4HF5MU EMS6SFMU Temperature ise ( C) Power () Temperature ise ( C) Power () <Condition> Base material : F-4 (t.6mm) Copper Thickness : 7 µm, Two layer esistor Soldering PB Sense terminal-ayout and Sense terminal 7 Sep. 4

19 Current Sensing esistors, Metal Plate Type Current Sensing esistors, Metal Plate Type Type: EM Features ow resistance values and high precision ( mω to mω) Stable resistance not infl uenced by measurement position High heat emission ow profi le, strong body Inductance less than. nh for the metal plate structure ohs compliant As for Packaging Methods, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E M S F M U Product Thick Film Chip esistors Size, Power ating M Inch 5 Power. S T Type General type ide terminal type Tolerance F Tolerance ± % ± 5 % Packaging Methods Packaging Embossed Carrier Taping U 4 mm pitch,, pcs. Value Shown by digits or letters. Decimal point is expressed by M as mω=m, mω=m atings (inch size) EMS (5) EMT (5) Power ating at 7 C () Standard (mω), 4 Tolerance (%) Please contact the factory for other values and the range T.C.. ( -6 / C) ±5 5, 6,, 5, ± F: ±, : ±5,.5 5±,, 4 ±5 Category Temperature ange ( C) 55 to +7 Circuit board of use You should use the aluminum substrate when the added watt age exceeds.5. Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) C 55 C 7 C Ambient Temperature ( C) 8 8 Oct. 4

20 Current Sensing esistors, Metal Plate Type Construction Dimensions in mm (not to scale) a T Terminal; Plated Metal Protective coating; esin esistive Body; Alloy Plate Type (inch size) S Type EMS (5) T Type EMT (5) T a Mass (eight) [g/ pcs.] 6.4 ±.5. ±.5.8 ±.. ± ±.4. ±. 9 ecommended and Pattern An example of a land pattern a b iring pattern (copper trace) and pattern c Solder resist a b c EMS EMT Oct. 4

21 High Power Chip esistors / ide Terminal Type High Power Chip esistors / ide Terminal Type Type: E A, B, B, B Features High solder-joint reliability by wide terminal con struc tion Excellent heat dissipation characteristics by wide terminal construction AEC-Q qualifi ed ohs compliant ecommended Applications Automotive electronic circuits including ECUs (Electrical control unit), anti-lock breaking systems and air-bag systems Current sensing for power supply circuits in a variety of equipment As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E A A U Product Thick Film Chip esistors A B B B Size, Power ating Inch Power.., ( < Ω ).75, ( < Ω ).,.5 ( < Ω ) Value egion A B C D Ω <. Ω < < Ω. Ω < <. Ω.5 Ω < <. Ω Tolerance F G Value ± % ± % ± 5 % Shown by digits or letters. Only when it is impossible, shown by 4 digits or letters. (Ex.) :. kω :. Ω = mω 47 : 4.7 Ω 5 :.5 Ω = 5 mω V Packaging Methods Packaging U Punched Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 4, pcs. EB EB EB EA atings (inch size) EA (5) EB () EB (6) EB (58) Power ating at 7 C ().75 ( < Ω) imiting Element Voltage () (V) Maximum Overload Voltage () (V) 4 Tolerance (%) ange (Ω) 5 m to 9 m : mω step ( ) T.C.. ( 6 / C) ± m to k (E4) < mω : ±5. 4 mω < : ± (±%) ±, ±5 m to k (E4) ± (±%, ±5%) < mω : ±5 mω < < 47 mω : ± 47 mω 4 ±, ±, ±5 m to k (E4) < < mω : ±5 (±%) ( < Ω) ± (±%, ±5%) mω < : ± (±%) ± (±%, ±5%) ±, ± m to M (E4) < mω : to + mω < < 47 mω : to +..5( < Ω) ±5 5 m to M m to M : E4 5 ±, ±, ±5 m to (E4) 47 mω < < mω : to +5 mω < < mω : to +5 (±%) to + (±%, ±5%) mω < : ± (±%) ± (±%, ±5%) < 47 mω : to + 47 mω < < Ω : to + Ω < : ± (±%) ± (±%, ±5%) Category Temperature ange ( C) 55 to to to to +55 () ated Continuous orking Voltage (CV) shall be de ter mined from CV= Power ating e sis tance Values, or imiting Element Voltage list ed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be de termined from SOTV=.5 Power ating or max. Over load Volt age list ed above which ev er less. 5 Oct. 4

22 High Power Chip esistors / ide Terminal Type Construction (Example : EA type) Protective coating Thick film resistive element Electrode (Inner) Electrode (Outer) Alumina substrate Electrode (Between) Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure below. ated oad (%) C 7 C 55 C Ambient Temperature ( C) Dimensions in mm (not to scale) EA type EB type fd P A A B B B T ( < mω ) ( mω < < MΩ ) T T b b a a l b b a a B C Di men sions (mm) Di men sions (mm) Mass (eight) [ pcs.] : 4 g T A B.±. 6.4±..55±..7±..45±. A B P D C.7±..5±.5.7± min. Mass (eight) [ pcs.] : g Di men sions (mm) T a b 5 mω<< mω.65±.5.±..±. mω<< mω.6±.5.±..55±.5.5±. mω<< MΩ.5±. EB type EB type T l b b T a a b b a a Di men sions (mm) Mass (eight) [ pcs.] : 7 g T a b.5±. 5.±..55±..5±..9±. Di men sions (mm) Mass (eight) [ pcs.] : 4.8 g T a b.5±..±.5.5±..5±..4±. 5 Oct. 4

23 High Power Chip esistors / ide Terminal Type Circuit Configuration EA type EB type EB type EB type < ess than mω > < ow resistance zone > < High resistance zone > 5 Oct. 4

24 Anti-Surge Thick Film Chip esistors Anti-Surge Thick Film Chip e sis tors Type: E P, PA, P6, P8, P4 Features ESD surge characteristics superior to standard metal fi lm resistors High reliability Metal glaze thick fi lm resistive element and three layers of electrodes Suitable for both refl ow and fl ow soldering High power. : 6 inch / 68 mm size (EP).5 : 6 inch / 68 mm size (EPA).5 : 85 inch / mm size (EP6), inch / 5 mm size (EP4).66 : 6 inch / 6 mm size (EP8) eference Standards IEC 65-8, IS C 5-8, EIA C-4B AEC-Q qualifi ed ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E P 6 D V Product Thick Film Chip esistors Size, Power ating P PA P6 P8 P4 Inch Power Tolerance D F Tolerance ±.5 % ± % ± 5 % Value The first two or three digits are significant figures of resistance and the third or 4th one denotes number of zeros following. Three digit type (±5%), four digit type (±%, ±.5%) Example:. kω, kω V U Packaging Methods Packaging Punched Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 5, pcs. EP EPA EP6 EP8 EP4 Construction Dimensions in mm (not to scale) Protective coating Electrode (Inner) a Alumina substrate t Thick fi lm resistive element Electrode (Between) Electrode (Outer) (inch size) EP (6) EPA (6) EP6 (85) EP8 (6) EP4 () b a b t Mass (eight) [g/ pcs.].6 ± ±.5.45 ± ± ±..45 ±..5.. ±..5 ±..5 ±..4 ±..6 ± ±..5 ±..6 ±.. ±..5 ±..5 ±..5 ±..6 ±. 6 7 Oct. 4

25 Anti-Surge Thick Film Chip esistors atings (inch size) EP (6) EPA (6) EP6 (85) EP8 (6) EP4 () Power ating () at 7 C () () ated Continuous orking Voltage (CV) shall be de ter mined from CV= Power ating e sis tance Values, or imiting Element Voltage list ed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be de termined from SOTV=.5 Power ating or max. Over load Volt age list ed above which ev er less. () Use it on the condition that the case temperature is below 55 C. Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the fi gure on the right. hen the temperature of EP4 is 55 C or less, the derating start temperature can be changed to 5 C. (See the dotted line) ESD Characteristic imiting Element Voltage () (V) Maximum Overload Voltage () (V) =Ω(<.5 kω)/5ω(>.5 kω) Tolerance (%) ±.5 ± ±5 ±.5, ± ±5 ±.5, ± ±5 ±.5, ± ±5 ±.5, ± ±5 ated oad (%) 55 C ange (Ω) tom (E4, E96) tom (E4, E96) tom (E4) tom (E4, E96) to.5m (E4) tom (E4, E96) to.m (E4) tom (E4, E96) tom (E4) tom (E4, E96) tom (E4) T.C.. ( 6 / C) ±5 ± < Ω : 5 to +4 Ω < : ± ± ± < Ω : ± Ω < : ± < Ω : to +6 Ω < < Ω : ± Ω < : ± ± < Ω : to +6 Ω < : ± ± < Ω : to +6 Ω < : ± 7 C E P, PA, P4 Category Temperature ange ( C) 55 to to to to to C 55 C E P6, P Ambient Temperature ( C) ±.kv C=5pF Sample Anti-Surge Thick Film Chip esistors(ep Type) Thick Film Chip esistors(e Type) Change atio of Value 5% % -5% -% -5% -% -5% -% Ω EP, PA(68 (6) size) Ω EPA EP EG Change atio of Value -5% -% -5% -5% -% kω kω kω MΩ Ω 5% % -% EP6 ( (85) size) EP6 E6G Ω kω kω kω MΩ Change atio of Value 5% % -5% -% -5% -% -5% -% Ω EP8(6 (6) size) EP8 E8G Change atio of Value -5% -% -5% -5% -% Ω kω kω kω MΩ Ω 5% % -% EP4(5 () size) EP4 E4 Ω kω kω kω MΩ 7 4 Oct. 4

26 Anti-Pulse Thick Film Chip esistors Anti-Pulse Thick Film Chip e sis tors Type: E T6, T8, T4 Features Anti-Pulse characteristics High pulse characteristics achieved by the optimized trimming specifi cations High reliability Metal glaze thick fi lm resistive element and three layers of electrodes Suitable for both refl ow and fl ow soldering High power.5 : 85 inch / mm size (ET6). : 6 inch / 6 mm size (ET8).5 : inch / 5 mm size (ET4) eference Standards IEC 65-8, IS C 5-8, EIA C-4B AEC-Q qualifi ed ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E T 6 V Product Thick Film Chip esistors T6 T8 T4 Size, Power ating Inch 85 6 Power Tolerance Tolerance ± 5 % V U Packaging Methods Packaging Punched Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 5, pcs. ET6 ET8 ET4 Value The first two digits are significant figures of resistance and the third one denotes number of zeros following. Example:. kω Construction Dimensions in mm (not to scale) Protective coating Alumina substrate Electrode (Inner) a t Electrode (Between) b (inch size) ET6 (85) a b t Mass (eight) [g/ pcs.]. ±..5 ±..5 ±..4 ±..6 ±. 4 Thick fi lm resistive element Electrode (Outer) ET8 (6) ET4 () ±..5 ±..6 ±.. ±..5 ±..5 ±..5 ±..6 ± Sep. 4

27 Anti-Pulse Thick Film Chip esistors atings (inch size) ET6 (85) Power ating at 7 C () imiting Element Voltage () (V) Maximum Overload Voltage () (V) Tolerance (%).5 5 ±5 ange (Ω) to M (E4) T.C.. ( 6 / C) ess than Ω : to +6 ess than Ω : ± More than Ω : ± Category Temperature ange ( C) 55 to +55 ET8 (6). 4 ±5 to M (E4) ess than Ω : to +6 More than Ω : ± 55 to +55 ET4 ().5 4 ±5 to M (E4) ess than Ω : to +6 More than Ω : ± 55 to +55 () ated Continuous orking Voltage (CV) shall be de ter mined from CV= Power ating e sis tance Values, or imiting Element Voltage list ed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be de termined from SOTV=.5 Power ating or max. Over load Volt age list ed above which ev er less. Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 7 C C Ambient Temperature ( C) imiting Power Curve In rush pulse Characteristic Pp imiting Power Pulse duration : t Period time : s Test cycle : cycles Spec : value = within ±5% : Anti-Pulse Thick Film Chip esistors (ET Type) : Thick Film Chip esistors (E Type) ET6 (85 inch/ mm size) ET8 (6 inch/6 mm size) ET4 ( inch/5 mm size) imiting Power : Pp () Pulse duration t (msec) imiting Power : Pp () Pulse duration t (msec) imiting Power : Pp () Pulse duration t (msec) 4 6 Sep. 4

28 Anti-Sulfurated Thick Film Chip esistors Anti-Sulfurated Thick Film Chip esistors Type: E S, S, S6, S8, S4, S, SD, ST (Au-based inner electrode type) Type: E U, U, U, U6, U8, U4, U, UD, UT, U6S, U6Q (Ag-Pd-based inner electrode type) Features High resistance to sulfurization achieved by adopting an Au-based inner electrode (ES type) and Ag-Pd-based inner electrode (EU type) High reliability Metal glaze thick fi lm resistive element and three layers of electrodes Suitable for both refl ow and fl ow soldering ow type EU6S, U6Q :. Ω to. Ω eference Standard IEC 65-8, IS C 5-8, EIA C-4B AEC-Q qualifi ed (Exemption EU) ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers ES, S, U, U Type E S 6 F V Product Thick Film Chip esistors U S U S U S6 U6 S8 U8 Inch Size, Power ating Power. Inch.5 S4 U4. S U 8. SD UD.5 ST UT 5.5 Power Tolerance F Tolerance ± % ± 5 % umper Value The first two or three digits are significant figures of resistance and the third or 4th one denotes number of zeros following. umper is expressed by. Three digit type (±5%), four digit type (±%) Example:. kω, kω Packaging Methods Packaging C Pressed Carrier Taping mm pitch, 5, pcs. EU X Punched Carrier Taping mm pitch,, pcs. ES, EU V U Punched Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 5, pcs. Embossed Carrier Taping 4 mm pitch, 4, pcs. ES, EU ES6, EU6 ES8, EU8 ES4, EU4 ES, EU ESD, EUD EST, EUT EU6S, U6Q Type E U 6 S V U6 Product Thick Film Chip esistors Size, Power ating Inch 85 Power..5 Value es. Value S Q. Ω to. Ω. Ω to Ω Tolerance F G Tolerance ± % ± % ±5 % Value Shown by digits or letters. (Example) :. Ω= mω :. Ω= mω V Packaging Methods Packaging Punched Carrier Taping 4 mm pitch, 5, pcs. EU6S EU6Q 7 7 an. 5

29 Anti-Sulfurated Thick Film Chip esistors Construction Protective coating Alumina substrate Thick fi lm resistive element Electrode (Inner) Au-based : ES type Ag-Pd-based: EU type Electrode (Between) Electrode (Outer) Dimensions in mm (not to scale) (inch size) t b a a b t Mass (eight) [g/ pcs.] EU ().6 ±.. ±.. ±.5.5 ±.5. ±..5 ES (4) EU ES (6) EU ES6 (85) EU6. ±.5.5 ±.5. ±..5 ±..5 ± ± ±.. ±.5.45 ±.. ±..5 ±..4 ±..4 ±..6 ±. 4 EU6 (85). ±..5 ±..45 ±..45 ±..55 ±. 6 ES8 (6) EU8 ES4 () EU4 ES (8) EU ESD () EUD EST (5) EUT ±..5 ±..6 ±.. ±..5 ±..5 ±..5 ±..6 ± ±.. ±..5 ±..5 ±..6 ± ±..5 ±..6 ±..6 ±..6 ± ±.. ±..65 ±..6 ±..6 ±. 45 atings (inch size) Powerating at 7 C () imiting Element Voltage () (V) Maximum Overload Voltage () (V) EU () ES EU (4) ES EU (6) ES6 EU6 (85) ES8 EU8 (6) ES4 EU4 () ES EU (8) ESD EUD () EST EUT (5) Tolerance (%) ange (Ω) ± to M (E4, E96) ±5 to M (E4) ± to M (E4, E96) ±5 to. M (E4) ± to M (E4, E96) ±5 to M (E4) ± to M (E4, E96) ±5 to M (E4) ± to M (E4, E96) ±5 to M (E4) ± to M (E4, E96) ±5 to M (E4) ± to M (E4, E96) ±5 to M (E4) ± to M (E4, E96) ±5 to M (E4) ± to M (E4, E96) ±5 to M (E4) T.C.. ( -6 / C ) < Ω: to +6 Ω to MΩ: ±(±5%) ±(±%) EU, ES, EU : ± MΩ<: 4 to +5 Category Temperature ange ( C) -55 to to to to to to to to to +55 () ated Continuous orking Voltage (CV) shall be determined from CV= Power ating Values, or imiting Element Voltage listed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be determined from SOTV=.5 Power ating or max. Overload Voltage listed above whichever less. [ow type] (inch size) EU6S (85) EU6Q (85) Powerating at 7 C () Tolerance (%).5 ±, ±, ±5 ange (Ω). to. (E4). to (E4) T.C.. ( -6 / C ) Category Temperature ange ( C) ±5-55 to an. 5

30 Anti-Sulfurated Thick Film Chip esistors [For umper] (inch size) ated Current (A) EU ().5 ES EU (4) ES EU (6) ES6 EU6 (85) ES8 EU8 (6) ES4 EU4 () ES EU (8) ESD EUD () EST EUT (5) Maximum Overload Current (A) 4 Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure below. ated oad (%) 55 C C 4 EU 5 C 55 C Ambient Temperature ( C) 7 9 an. 5

31 Anti-Sulfurated High Power Chip esistors / ide Terminal Type Anti-Sulfurated High Power Chip esistors / ide Terminal Type Type: E C Features High resistance to sulfurization achieved by adopting Anti-Sulfurated electrode structure and material High solder-joint reliability by wide terminal con struc tion Excellent heat dissipation characteristics by wide terminal construction AEC-Q qualifi ed ohs compliant ecommended Applications Motor control circuit of the industrial equipment Automotive electronic circuits including ECUs (Electrical control unit), anti-lock breaking systems and air-bag systems Current sensing for power supply circuits in a variety of equipment As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E C C F U Product Thick Film Chip esistors Size, Power ating C Inch Power. Value egion B C mω < < Ω mω < < mω Tolerance F ± % ± 5 % Packaging Methods Packaging U Embossed Carrier Taping 4 mm pitch, 5, pcs. EC Value Shown by digits or letters. Only when it is impossible, shown by 4 digits or letters. (ex.) :. Ω = mω 5 :.5 Ω = 5 mω Construction Dimensions in mm (not to scale) Protective coating Alumina substrate Electrode (Inner) Ag-Pd-based : ECB type Covered Electrode : ECC type l a a T b Electrode (Between) b Thick fi lm resistive element Electrode (Outer) (inch size) ECB () ECC () Di men sions (mm) T a b Mass (eight) [g/ pcs.].5±..5±. 5.±..55±..9±. 7.6±. 4 Sep. 4

32 Anti-Sulfurated High Power Chip esistors / ide Terminal Type Circuit Configuration Type EC atings (inch size) EC () Power ating at 7 C () () Tolerance (%) ± ±5 ange (Ω) m to (E4) T.C.. ( -6 / C ) mω < < mω : ±5 mω < < 47 mω : ± 47 mω < < mω : ±5 mω < < Ω : ± mω < < mω : ±5 mω < < Ω : ± Category Temperature ange ( C) 55 to +55 () Use it on the condition that the case temperature is below 55 C. Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 7 C C Ambient Temperature ( C) 4 Sep. 4

33 Chip esistor Array Chip esistor Array Type: EXB 4V, 8V, 4V, 8V, N8V, HV, 4V, V4V, 8V, V8V, S8V Features High density resistors in.8 mm.6 mm size / inch size : EXB4V 4 resistors in.4 mm.6 mm size / 5 inch size : EXB8V resistors in. mm. mm size / 44 inch size : EXB4V 4 resistors in. mm. mm size / 84 inch size : EXB8V, EXBN8V 8 resistors in.8 mm.6 mm size / 56 inch size : EXBHV resistors in.6 mm.6 mm size / 66 inch size : EXB4V, EXBV4V 4 resistors in. mm.6 mm size / 6 inch size : EXB8V, EXBV8V 4 resistors in 5. mm. mm size / 9 inch size : EXBS8V Improvement of placement effi ciency Placement effi ciency of Chip esistor Array is two, four or eight times of the fl at type chip resistor eference Standard IEC 65-9, IS C 5-9, EIA C-9 AEC-Q qualifi ed (EXB, EXB) ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E X B V 8 V 4 7 V Product Thick Film Chip esistor Networks Size and construction No. of Terminal Schematics Value Packaging Methods Inch Terminal type 4 4 Terminal V Isolated The first two digits are Tolerance Packaging Convex/ Array 8 8 Terminal type significant figures of ±5 % Embossed Carrier Taping Flat Terminal H 6 Terminal resistance value and Nil EXBS8V umper 4 mm pitch,,5 pcs. 4 Array Convex the third one denotes 6 Array Terminal the number of zeros Punched Carrier Taping EXB4V, 8V, X N 4 Array following. umper is mm pitch,, pcs. 4V, 8V, N8V Concave expressed by Punched Carrier Taping EXBHV, 4V, V 6 Array Terminal V 4 mm pitch, 5, pcs. 8V, V4V, V8V S 85 Array Example :. kω Construction (Example : Concave Terminal) Schematics Isolated type 4V, 4V, 4V, V4V resistors 4 8V, 8V, N8V, 8V, V8V, S8V 4 resistors Protective coating 4 Thick film resistive element Electrode (Inner) Electrode (Outer) Electrode (Between) Alumina substrate HV 8 resistors Sep. 4

34 Chip esistor Array atings Item Specifi cations ange Ω to MΩ : E4 series Tolerance : ±5 % 4V,4V,V4V,4V 4 terminal Number of Terminals 8V,8V,N8V,8V,V8V,S8V 8 terminal HV 6 terminal 4V,4V,V4V,4V element imiting Element Voltage () Maximum Overload Voltage () Item 4V,8V HV 4V,8V,N8V,8V,4V,V4V,V8V S8V 4V,8V HV 4V,8V,N8V,8V,4V,V4V,V8V S8V Specifi cations.5 V 5 V 5 V V 5 V 5 V V V Number of esistors 8V,8V,N8V,8V,V8V,S8V 4 element T.C.. ± -6 / C HV 4V,N8V 8V 8 element. /element. /element (. /package) Power ating at 7 C 4V,8V,V4V,4V,V8V,8V.6 /element S8V HV. /element.6 /element (.5 /package) umper Array Category Temperature ange 55 C to 5 C ated Current HV,4V,8V,N8V,8V,4V,V4V,V8V Maximum Overload Current 4V,8V S8V 4V,8V HV,4V,8V,N8V,8V,4V,V4V,V8V S8V.5 A A A A A 4 A () ated Continuous orking Voltage (CV) shall be de ter mined from CV= Power ating Value, or imiting Element Voltage listed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be determined from SOTV=.5 Power ating or max. Overload Voltage list ed above whichever less. Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 7 C C Ambient Temperature ( C) Sep. 4

35 Chip esistor Array Dimensions in mm (not to scale) () Convex Terminal type A EXB4V, 4V, 4V A A EXB8V, 8V P T P T A EXBV4V A A EXBN8V, V8V, S8V B G B G B G B G P T P T A A EXB8V B G G B B G B B G G B B G G A A EXBHV P T (inch size) T A A B P G Mass (eight) [g/ pcs.] EXB4V ( ).8 ±..6 ±..5 ±..5 ±..5 ±. (.5).5 ±..5 EXB4V (4 ). ±.. ±..5 ±..4 ±..8 ±. (.65).5 ±.. EXB8V (4 4). ±.. ±..5 ±..45 ±..5 ±.. ±. (.5).5 ±.. EXBHV (4 8).8 ±..6 ±..45 ±..5 ±..5 ±.. ±. (.5). ±. 9. EXB4V (6 ).6 ±..6 ±.5.5 ±..65 ±.5. ±. (.8). ±..5 EXB8V (6 4). ±..6 ±.5.5 ±..65 ±.5.45 ±.5. ±. (.8).5 ±. 7. () Concave Terminal type ( ) eference (inch size) T A A B P G Mass (eight) [g/ pcs.] EXBN8V (4 4). ±.. ±..45 ±.. ±.. ±.. ±.5 (.5). ±.5. EXBV4V (6 ) ±..6 ±.. ±.5 (.8).45 ±.5 5. EXBV8V (6 4) ±..6 ±..6 ±.. ±.5 (.8).45 ±.5 EXBS8V (85 4) ±..8 ±.5.8 ±.5.5 ±.5 (.7).55 ±.5 () Flat Terminal type ( ) eference (inch size) P B T G T A A B P G Mass (eight) [g/ pcs.] EXB8V ( 4).4±..6±..5±..±..±..±. (.4).±.. ( ) eference 4 Sep. 4

36 Metal Film Chip esistor Array Metal Film Chip esistor Array Type: EA8V Features High accuracy... Small resistance tolerance and Temperature Coeffi cient of (T.C..) High reliability... Stable at high temperature and humidity (85 C 85 % H rated load, Category temperature range : 55 to +55 C) High performance... ow current noise, excellent non-linearity Customize... Different resistance values are available. Please contact us for details. AEC-Q qualifi ed ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E A 8 V X Product Metal Film Chip esistors Size and construction Inch Terminal type 6 Array (6) Convex Terminal No. of Terminal No. of Terminal 8 8 Terminals Circuit Schematics Type V Isolated type V U T.C.. Absolute ±5-6 / C ±5-6 / C ±5-6 / C Tracking -6 / C 5-6 / C 5-6 / C X Y Z Value Tolerance Absolute Tracking ±. % ±.5 % ±.5 %. %.5 %.5 % The first three digits are significant figures of resistance and the fourth one denotes number of zeros following. (example) : kω Construction Schematics Isolated type 4 resistors Protective coating Alumina substrate High reliability metal film Electrode (Inner) Electrode (Between) Electrode (Outer) 4 5 Sep. 4

37 Metal Film Chip esistor Array Dimensions in mm (not to scale) A P Convex Terminal type A B B T G G 6 inch size Dimensions (mm) Dimensions (mm) T A.±..6±.5.5±..65±.5 A B P G.45±.5.±. (.8).5±. Mass (eight) [g/ pcs.] : 7. g ( ) eference atings (inch size) EA8V (6 4) Power ating at 7 C ().6/ element imiting Element Voltage () (V) Maximum Overload Voltage () (V) 75 5 T.C.. (Absolute) T.C.. (Tracking) ( 6 / C ) Absolute : ±5 Tracking : 5 (U) Absolute : ±5 Tracking : 5 (V) Absolute : ±5 Tracking : () Tolerance (Absolute) Tolerance (elative) (%) Absolute : ±.5 elative :.5 (Z) Absolute : ±.5 elative :.5 (Y) Absolute : ±. elative :. (X) ange () (Ω) to 9 k (E4) k to 9 k (E4) Category Temperature ange ( C) 55 to +55 () ated Continuous orking Voltage (CV) shall be de ter mined from CV= Power ating Value, or imiting Element Voltage listed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be determined from SOTV=.5 Power ating or max. Overload Voltage list ed above whichever less. () E96 series resistance values are also available. Please contact us for details. Power Derating Curve For resistors operated in ambient temperatures above 85 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 85 C C Ambient Temperature ( C) 6 Sep. 4

38 Anti-Sulfurated Chip esistor Array Anti-Sulfurated Chip esistor Array Type: EXB U4, U8, UH, U4, U8 Features High resistance to sulfurization achieved by adopting an Ag-Pd-based inner electrode High density resistors in. mm. mm size / 44 inch size : EXBU4 4 resistors in. mm. mm size / 84 inch size : EXBU8 8 resistors in.8 mm.6 mm size / 56 inch size : EXBUH resistors in.6 mm.6 mm size / 66 inch size : EXBU4 4 resistors in. mm.6 mm size / 6 inch size : EXBU8 Improvement of placement effi ciency Placement effi ciency of Chip esistor Array is two, four or eight times of the fl at type chip resistor eference Standard IEC 65-9, IS C 5-9, EIA C-9 AEC-Q qualifi ed ohs compliant As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E X B U X Product Thick Film Chip esistor Networks Size, Construction Inch U 4 Array U 6 Array Anti-Sulfuarted Convex Terminal No. of Terminal 4 4 Terminal 8 8 Terminal H 6 Terminal Value The first two digits are significant figures of resistance value and the third one denotes the number of zeros following. umper is expressed by Example :. kω Tolerance ±5 % umper X V Packaging Methods Packaging Punched Carrier Taping mm pitch,, pcs. Punched Carrier Taping 4 mm pitch, 5, pcs. EXBU4, U8 EXBUH, U4, U8 Construction Schematics Isolated type EXBU4, U4 resistors EXBU8, U8 4 resistors Protective coating 4 Alumina substrate EXBUH 8 resistors Thick film resistive element Electrode (Inner) Electrode (Between) Electrode (Outer) Sep. 4

39 Anti-Sulfurated Chip esistor Array Dimensions in mm (not to scale) A EXBU4, U4 A A EXBU8, U8 B B G G B B G G P T P T A A EXBUH G B B G P T (inch size) atings Mass (eight) [g/ pcs.] T A A B P G EXBU4 (4 ). ±.. ±..5 ±..4 ±..8 ±. (.65).5 ±.. EXBU8 (4 4). ±.. ±..5 ±..45 ±..5 ±.. ±. (.5).5 ±.. EXBUH (4 8).8 ±..6 ±..45 ±..5 ±..5 ±.. ±. (.5). ±. 9. EXBU4 (6 ).6 ±..6 ±.5.5 ±..65 ±.5. ±. (.8). ±..5 EXBU8 (6 4). ±..6 ±.5.5 ±..65 ±.5.45 ±.5. ±. (.8).5 ±. 7. ( ) eference Item Specifi cations Item Specifi cations ange Ω to MΩ E4 series Tolerance : ±5 % Number of Terminals Number of esistors Power ating at 7 C U4, U4 4 terminal U8, U8 8 terminal UH 6 element U4, U4 element U8, U8 4 element UH 8 element U4, U8, U4, U8.6 /element UH.6 /element (.5 /package) imiting Element UH 5 V Voltage () U4, U8, U4, U8 5 V Max. Overload UH 5 V Voltage () U4, U8, U4, U8 V () ated Continuous orking Voltage (CV) shall be de ter mined from CV= Power ating Value, or imiting Element Voltage listed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be determined from SOTV=.5 Power ating or max. Overload Voltage list ed above whichever less. T.C.. ± -6 / C Category Temperature ange 55 C to 5 C umper Array ated U4, U8, UH, U4, U8 A Current Max. Overload U4, U8, UH, U4, U8 A Current Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 7 C C Ambient Temperature ( C) 8 Sep. 4

40 Chip esistor Networks Chip esistor Networks Type: EXBD EXBE EXBA EXBQ Features High density placing for digital signal circuits Bussed 8 or 5 resistors for pull up/down circuits EXBD:. mm.6 mm.55 mm,.65 mm pitch EXBE: 4. mm. mm.55 mm,.8 mm pitch EXBA: 6.4 mm. mm.55 mm,.7 mm pitch EXBQ:.8 mm.6 mm.45 mm,.5 mm pitch Available direct placing on the bus line by means of half pitch spacing without through-holes on PB ( High density placing is shown below) High speed mounting using conventional placing machine eference Standard IEC 65-9, IS C 5-9, EIA C- ohs compliant [High density placing] Pull up resistors V CC EXBEC Direct placement on the bus line EXBAP V CC V CC IC IC No through hole IC IC IC IC Through holes.4 mm pitch.65 mm pitch As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E X B E C Product Thick Film esistor Network D E A Q Dimension of Chip esistor Network Inch Dimensions. mm.6 mm 4. mm. mm 6.4 mm. mm.8 mm.6 mm Number of Terminals (EXBD,E,A) 6(EXBQ) C P P E Circuit Configuration Common Terminal Position Center common circuit (EXBD, EXBE) Diagonal common circuit (Terminal 5 and Terminal ) (EXBA) One side common circuit (Terminal 6) (EXBQ) Diagonal common circuit (Terminal and Terminal 6) (EXBA) Value The first two digits are significant figures of resistance value and the third one denotes the number of zeros following. Tolerance ±5 % Suffix for Special equirements 9 Sep. 4

41 Chip esistor Networks Construction (Example : EXBD) Protective coating Protective coating Electrode (Inner) Alumina substrate Thick film Electrode (Outer) resistive element Electrode (Between) Electrode (Inner) Thick film resistive element Alumina substrate Dimensions in mm (not to scale) EXBD EXBE EXBA EXBQ.±..4±.5.4±.5.±.5 f.±..±..65±..±.5.±..5±..±..±..5±..5±.5.5±.5.6±.5.55±..5±. f. +...±..±..5±..5±..5±. I.8±. 4.±..4±..5±..5±..5±..4±..4±..±..55±..7±. f. +.. I.7±. 6.4±..5±..5±..5±..±..±..±. EXBAP I.55±. EXBAE I ±..8±..±. 47.5± ±.5.±.5.6±..45±. Mass (eight)[ pcs.] : g Mass (eight)[ pcs.] : 6 g Mass (eight)[ pcs.] : 4 g Mass (eight)[ pcs.] : 9 g Circuit Configuration EXBD, EXBE EXBA EXBQ EXBAP EXBAE atings Item Specifi cations Series EXBD EXBE EXBA EXBQ ange 47 Ω to MΩ (E) Ω to 47 kω (E6 series) Tolerance ±5% Number of Terminals terminals 6 terminals Number of esistors 8 element 5 element Power ating at 7 C.5 /element.6 /element.5 /element imiting Element Voltage () 5V 5 V 5V Maximum Overload Voltage () 5 V V 5 V T. C.. ± 6 / C Category Temperature ange 55 C to +5 C () ated Continuous orking Voltage (CV) shall be determined from CV= Power ating Value, or imiting Element Voltage listed above, whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be determinedfrom SOTV=.5 CV or Maximum Overload Voltage list ed above which ev er less. Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 7 C C Ambient Temperature ( C) 4 Sep. 4

42 Chip Attenuator Chip Attenuator Type: EXB 4AT EXB 4AT Features Unbalanced π type attenuator circuit in one chip EXB4AT (.8 mm.6 mm), EXB4AT (. mm. mm) educed mounting area : EXB4AT : About 6 % smaller than the area of an attenuator circuit consisting of three 6 chip resistors, almost equal to the area of three 4 chip resistors EXB4AT : About 5 % smaller than the area of an attenuator circuit consisting of three 5 chip resistors, almost equal to the area of three 6 chip resistors Mounting cost reduction : (Only chip placed as compared to ) Attenuation : db to db ohs compliant ecommended Applications Attenuation / level control / impedance matching of high frequency (communication signalling equipment cellular phones(gsm, CDMA, PDC, etc.), PHS, PDAs) As for Packaging Methods, and Pattern, Soldering Conditions and Safety Precautions, Please see Data Files Explanation of Part Numbers E X B 4 A T A X Product Dimensions and Attenuation Value Tolerance Circuit Configuration ±. db Thick Film esistor Network 4AT.8 mm.6 mm (inch size : ) π type attenuator One-digit number /one letter shows attenuation value (ex.) db, A db 5 ±.5 db X Packaging Punched Carrier Taping mm pitch,, pcs. 4AT. mm. mm (inch size : 44) π type attenuator Characteristics Impedance A 5 Ω Attenuation (db) Attenuation-Frequency Characteristics (EXB4AT, EXB4AT) db db db 4dB 5dB 6dB db k k M M M G G Frequency (Hz) Circuit Configuration Unbalanced π type 4 4 Sep. 4

43 Chip Attenuator Construction EXB4AT EXB4AT Protective coating Protective coating Thick film resistive element Electrode (Inner) Electrode (Between) Dimensions in mm (not to scale) EXB4AT Alumina substrate Electrode (Outer) Thick film resistive element Electrode (Inner) EXB4AT Alumina substrate Electrode (Outer) Electrode (Between) A 4 B A 4 B P P T C C T Di men sions (mm) T A B C P (typical value).8 ±..6 ±..5 ±..5 ±..5 ±..5 ±..5 <Marking Configuration> The bar marking for recognizing terminal direction is located on the side of terminal, 4. Mass (eight) [ pcs.] :.7 g Di men sions (mm) T A B C P (typical value). ±.. ±..5 ±..4 ±..5 ±..5 ±..65 <Marking Configuration> The bar marking for recognizing terminal direction is located on the side of terminal 4. Mass (eight) [ pcs.] :. g atings EXB4AT, EXB4AT Attenuation Value db, db, db, 4 db, 5 db, 6 db, db Attenuation Value Tolerance db, db, db, 4 db, 5 db : ±. db 6 db, db : ±.5 db Characteristic Impedance 5 Ω Power ating.4 /package Frequency ange at 7 C DC to. GHz VS (Voltage Standing ave atio). max. Number of esistors resistors Number of Terminals 4 terminals Category Temperature ange 55 C to +5 C Please inquire about the other Attenuator value Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated Power (%) C 7 C 5 C Ambient Temperature ( C) 4 Sep. 4

44 Surface Mount esistors Packaging Method (Taping) Products Thick Film Chip esistors Precision Thick Film Chip esistors Metal Film Chip esistors, High eliability Type Thick Film Chip esistors/ ow Type Current Sensing esistors, Metal Plate Type High Power Chip esistors/ ide Terminal Type Surface Mount esistors Series Size mm (inch) Pressed Carrier Taping ( mm pitch) Packaging (Standard Quantity : pcs./reel) Punched Carrier Taping ( mm pitch) Punched Carrier Taping (4 mm pitch) Embossed Carrier Taping (4 mm pitch) EXGN 4(5), 4, EGN 6() 5, EGE 5(4),,, EGE 68(6) 5, E6GE (85) 5, E8GE 6(6) 5, E4 5() 5, E 45(8) 5, EZ 55() 5, ET 64(5) 4, EXGN 4(5), EGN/H 6() 5, EH/K 5(4), EB/E/EK 68(6) 5, E6B/6E/6EN (85) 5, E8EN 6(6) 5, E4N 5() 5, EN 45(8) 5, ES 55() 5, ETN 64(5) 4, EAA 6() 5, EAA 5(4), EAA 68(6) 5, EA6A (85) 5, EA8A 6(6) 5, E/B 5(4), EBS/BQ 5(4), E/B// 68(6) 5, E6B/6/6 (85) 5, E8B/8/8C/8 6(6) 5, E4B/4/4 5() 5, E/ 45(8) 5, EZ/D 55() 5, ET 64(5) 4, E 64(5), EMS4 64(5), EMS6 6468(56), (8 mm Pitch) EM 64(5), EA 64(5) 4, EB/EC () 55() 5, EB 6(6) 5, EB (58) 5, 8P : idth 8 mm, Pitch mm, 4P : idth 4 mm, Pitch mm () Anti-Sulfurated High Power Chip esistors / ide Terminal Type 4 8 Nov. 4

45 Surface Mount esistors Packaging Method (Taping) Products Anti-Surge Thick Film Chip esistors Surface Mount esistors Series Size mm (inch) Pressed Carrier Taping ( mm pitch) Packaging (Standard Quantity : pcs./reel) Punched Carrier Taping ( mm pitch) Punched Carrier Taping (4 mm pitch) Embossed Carrier Taping (4 mm pitch) EP/PA 68(6) 5, EP6 (85) 5, EP8 6(6) 5, EP4 5() 5, Anti-Pulse Thick Film Chip esistors ET6 (85) 5, ET8 6(6) 5, ET4 5() 5, EU 6() 5, ES/U 5(4), Anti-Sulfurated Thick Film Chip esistors ES/U 68(6) 5, ES6/U6 EU6S/U6Q (85) 5, ES8/U8 6(6) 5, ES4/U4 5() 5, ES/U 45(8) 5, ESD/UD 55() 5, EST/UT 64(5) 4, EXB4V 86(), EXB4V (44), EXB4V 66(66) 5, EXBV4V 66(66) 5, Chip esistor Array EXB8V 46(5), EXB8V (84), EXBN8V (84), EXB8V 6(6) 5, EXBV8V 6(6) 5, EXBS8V 5(9),5 EXBHV 86(56) 5, Metal Film Chip esistor Array EA8V 6(6) 5, EXBU4 (44), Anti-Sulfurated Chip esistor Array EXBU4 66(66) 5, EXBU8 (84), EXBU8 6(6) 5, EXBUH 86(56) 5, EXBD 6(6) 5, Chip esistor Networks EXBE 4(68) 4, EXBA 64(5) 4, EXBQ 86(56) 5, Chip Attenuator EXB4AT 86(), EXB4AT (44), 44 8 Nov. 4

46 Surface Mount esistors Packaging Method (Taping) Carrier Tape Pressed Carrier Punched Carrier Embossed Carrier fd P P P B F E T T T A P ( mm Pitch) fd (Only Emboss) Pressed Carrier Taping ( mm Pitch) ectangular Type (Unit : mm) Size mm (inch) A B F E P P P D T EXGN 4(5).4 ±..45 ±.. ±.5 EGN E 6.8 EU ().68 ±.5 8. ±..5 ±.5.75 ±.. ±.. ±.5 4. ± EAA.4 ±.5 E 5(4).68 ±.. ±..6 ±.5 EB 5(4).67 ±..7 ±..6 ±.5 Punched Carrier Taping ( mm Pitch) ectangular Type E ES EU EAA E E( mω) EB E EAA E(5 mω) E6 E 6 EU6S, U6Q EA6A Size mm (inch) 5 (4) Size mm (inch) 68 (6) A B F E P P P D T (Unit : mm).67 ±.5.7 ±.5 8. ±..5 ±.5.75 ±.. ±.. ±.5 4. ± ±.5 Chip esistor Array / Anti-Sulfurated Chip esistor Array / Chip Attenuator Size mm (inch) A B F E P P P D T EXB4V 86 EXB4AT.95 () EXB8V 46(5).6 ±. EXB4V EXBU4 8. ±..5 ±.5.75 ±.. ±.. ±.5 4. ± ±.5 EXB4AT (44) EXB8V EXBU8 EXBN8V Punched Carrier Taping (4 mm Pitch) ectangular Type A B F E P P P D T. ±..9 ±. (85).65 ±.5.5 ±. EB (58) E6B (85).55 ±.5. ±. E8 E8 E 8 EA8A (84) EB 6(6). ±.. ±.. ±. 6 (6). ±.5.6 ±. 8. ±..5 ±.5.75 ±. 4. ±.. ±.5 4. ± (Unit : mm) (Unit : mm).7 ±.5.84 ± Nov. 4

47 Surface Mount esistors Packaging Method (Taping) Chip esistor Array / Metal Film Chip esistor Array / Anti-Sulfurated Chip esistor Array / Chip esistor Networks (Unit : mm) Size mm (inch) A B F E P P P D T EXB4V EXBU4 66(66).95 ±. EXB8V EA8V 6(6).6 ±..7 ±.5 EXBU8.95 ±.5 EXBHV EXBUH 86(56) 4.±.5 8. ±..5 ±.5.75 ±. 4. ±.. ±.5 4. ± EXBV4V 66(66).95 ±. EXBV8V 6(6).6 ±..84 ±.5 EXBD 6(6). ±..6 ±..84 ±. EXBQ 86(56).9 ±. 4. ±..64 ±.5 Embossed Carrier Taping ( mm Pitch) ectangular Type Size mm (inch) A B F E P P P D T (Unit : mm) EXGN 4(5).5 ±.5.45 ±.5 4. ±..8 ±.5.9 ±.. ±.. ±.. ±..8 ±..5 max. Embossed Carrier Taping (4 mm Pitch) ectangular Type (Unit : mm) Size mm (inch) A B F E P P P D T D E4 5 E 4 ().8 ±..5 ±. 8. ±..5 ± E 45 E (8).5 ±. 4.8 ±. EZ 55 ES E D ().8 ±. 5. ±.. ±. EB ±. 4. ±.. ±.5 4. ± EC (). ±. 5.5 ±. ET.5 min. E T 64 E.6 (5) 6.9 ±..6 ±. EM EMS4.5 ±. EA 64(5).5 ±. 6.8 ±.. ±. Chip esistor Array / Chip esistor Networks (Unit : mm) Size mm (inch) A B F E P P P D T D EXBS8V 5(9).8 ±. 5.7 ±..6 max. EXBE 4(68).5 ±. 4.4 ±.. ±. 5.5 ±..75 ±. 4. ±.. ±.5 4. ± min.. ±. EXBA 64(5).5 ±. 6.8 ±. Embossed Carrier Taping (8 mm Pitch) ectangular Type (Unit : mm) Size mm (inch) A B F E P P P D T D EMS6 6468(56) 6.9 ±. 7.5 ±.. ±. 5.5 ±.5.75 ±. 8. ±.. ±.5 4. ± ±..5 min. Taping eel (Unit : mm) fc ±. Tape idth () A N C 4mm idth ±.5 7. ± fn 8mm idth ± ±. mm idth ±. fa 4mm idth 8. ±. 8. ±. 5.4 ±. 9.4 ± Nov. 4

48 Surface Mount esistors and Pattern ecommended and Pattern An example of a land pattern for the ectangular Type is shown below. a b Chip esistor High power (double-sided resistive elements structure) type Size mm/inch c a b c E/B 5/4.5.4 to.6.4 to.6 E/B 68/6.5 to.8.5 to.7.9 to. E6B /85.9. to.8. to.4 E8B E8C ( to 6 mω) 6/ to 5.. to.8 E8C (8 to 5 mω) 6/6. to to 5.. to.8 Size mm/inch a b c 4/5.5 to..5 to.7. to.5 6/. to.4.8 to.9.5 to.5 5/4.5 to.6.4 to.6.4 to.6 68/6.7 to.9. to..8 to. /85. to.4. to.8.9 to.4 6/6. to to 5.. to.8 5/. to to 5..8 to.8 45/8. to to 6.5. to.5 55/.6 to to 7..8 to.8 64/5 5. to to 8.6. to.5 64/5.6 to to 8.6. to.5 E An example of a land pattern for High Power Chip esistors / ide Terminal Type is shown below. c b b a a b c EA EB () EC EB EB..8.6 () Anti-Sulfurated High Power Chip esistors / ide Terminal Type 6 47 Nov. 4

49 Surface Mount esistors and Pattern An example of a land pattern for Chip esistor Array, Metal Film Chip esistor Array, Anti-Sulfurated Chip esistor Array and Chip Attenuator is shown below. a d Conductor f a Solder resist b c b P c EXB4V EXB4A EXB4V EXBU4 EXB4A a b c d....8 to to.4..4 to.5 a b c f P EXB8V. to..5 to..5 to..8 to.9.4 EXBV4V,V8V.7 to.9.4 to.45.4 to.45 to.4.8 EXB4V,8V EXBU4,U8.7 to.9.4 to.5.4 to.5. to.6.8 EA8V EXBS8V to..5 to.75.5 to.75. to.8.7 f a f a b d c d c d b b d c d c d c d c d c d c d b a b c d f EXB8V EXBU8 EXBN8V.45 to.5.5 to to. EXBHV EXBUH a b c d f An example of a land pattern for Chip esistor Networks is shown below. EXBA EXBE Pitch.7 mm Pitch.8 mm.8.5 to.4 For popular pattern. to.5 4. to to.5.4 to.5. to to.6. to.4 5. to 5.4 Pitch.65 mm Through-hole less. EXBAP EXBAE Pitch.4 mm Through-hole less. to to.4 For high density pattern to to EXBD EXBQ Pitch.65 mm.65. to. Pitch.5 mm For popular pattern. to.4.6 to.8.6 to 4..9 to.. to.6. to.6.9 to.. to.5.5 hen designing high density land patterns, examine the reliability of isolation among the lines and adopt the chip resistor networks Nov. 4

50 ecommended Soldering Conditions ecommendations and precautions are described below. ectagular Type Surface Mount esistors ecommended Soldering Conditions ecommended soldering conditions for reflow eflow soldering shall be performed a maximum of two times. Please contact us for additional information when used in conditions other than those specified. Please measure the temperature of the terminals and study every kind of solder and printed circuit board for solderability be fore ac tu al use. Temperature Peak Preheating Heating For soldering (Example : Sn/Pb) Temperature Time Preheating 4 C to 6 C 6 s to s Main heating Above C s to 4 s Peak 5 ± 5 C max. s For lead-free soldering (Example : Sn/Ag/Cu) Temperature Time Preheating 5 C to 8 C 6 s to s Main heating Above C s to 4 s Peak max. 6 C max. s Time ecommended soldering conditions for fl ow For soldering For lead-free soldering Temperature Time Temperature Time Preheating 4 C to 8 C 6 s to s 5 C to 8 C 6 s to s Soldering 45 ± 5 C s to s max. 6 C max. s Chip esistor Array, Chip esistor Networks and Chip Attenuator ecommended soldering conditions for reflow eflow soldering shall be performed a maximum of two times. Please contact us for additional information when used in conditions other than those specified. Please measure the temperature of the terminals and study every kind of solder and printed circuit board for solderability be fore ac tu al use. For soldering (Example : Sn/Pb) Temperature Time Preheating 4 C to 6 C 6 s to s Main heating Above C s to 4 s Peak 5 ± 5 C max. s For lead-free soldering (Example : Sn/Ag/Cu) Temperature Peak Preheating Heating Temperature Time Preheating 5 C to 8 C 6 s to s Main heating Above C s to 4 s Peak max. 6 C max. s Time Flow soldering e do not recommend flow soldering, because a solder bridge may form. Please contact us regarding flow sol der ing of EXBA se ries. 49 Sep. 4

51 Surface Mount esistors Safety precautions Safety Precautions (Common precautions for Surface Mount esistors) The following are precautions for individual products. Please also refer to the common precautions for Fixed esistors in this catalog.. Take measures against mechanical stress during and after mounting of Surface Mount esistors (hereafter called the resistors) so as not to damage their electrodes and protective coatings. Be careful not to misplace the resistors on the land patterns. Otherwise, solder bridging may occur.. Keep the rated power and ambient temperature within the specified derating curve. Some circuit boards, wiring patterns, temperatures of heat generated by adjacent components, or am bi ent tem per a tures can become factors in the rise of the temperature of the re sis tors, regardless of the level of power applied. Therefore, check the conditions before use and op ti mize them so as not to damage the boards and peripheral components. Make sure to contact us before using the resistors under special conditions.. If a transient load (heavy load in a short time) like a pulse is expected to be applied, check and evaluate the operations of the resistors when installed in your products before use. Never exceed the rated power. Otherwise, the performance and/or reliability of the resistors may be impaired. 4. Before using halogen-based or other high-activity flux, check the possible effects of the flux residues on the per for mance and reliability of the resistors. 5. hen soldering with a soldering iron, never touch the resistors'bodies with the tip of the soldering iron. hen using a soldering iron with a high temperature tip, finish soldering as quickly as possible (within three seconds at 5 C max.). 6. As the amount of applied solder becomes larger, the mechanical stress applied to the resistors increases, causing problems such as cracks and faulty characteristics. Avoid applying an excessive amounts of solder. 7. hen the resistors' protective coatings are chipped, flawed, or removed, the characteristics of the resistors may be impaired. Take special care not to apply mechanical shock during automatic mounting or cause damage during handling of the boards with the resistors mounted. 8. Do not apply shock to the resistors or pinch them with a hard tool (e.g. pliers and tweezers). Otherwise, the resistors' protective coatings and bodies may be chipped, affecting their performance. 9. Avoid excessive bending of printed circuit boards in order to protect the resistors from abnormal stress.. Do not immerse the resistors in solvent for a long time. Before using solvent, carefully check the effects of im mer sion.. Transient voltage If there is a possibility that the transient phe nom e non (significantly high voltage ap plied in a short time) may oc cur or that a high voltage pulse may be applied, make sure to evaluate and check the char ac ter is tics of Fixed Metal (Oxide) Film esistors mounted on your product rather than only depending on the calculated pow er limit or steady-state conditions to complete the de sign or decide to use the resistors.. Do not apply excessive tension to the terminals. 5 Sep. 4

52 Metal (Oxide) Film esistors Metal (Oxide) Film e sis tors Type: EG(X)S (Small size) (.5,,,, 5 ) EG(X)F (Anti-heat conducting for PCB) (,,, 5 ) Features Miniaturized 5 % smaller compared to existing models Non-fl ammable High eliability Automatic Insertion eference Standards IEC 65-, IEC 65-4, IS C 5-4, EIA C-8 ohs compliant Explanation of Part Numbers Ex. : EX type E X S Z E Product Metal Film EX esistors E Power ating at 7 C EXS Style Specification Small size S.5 to 5 Small size Anti-heat conducting type F (Fe lead wire) to 5 Z is added according to resistance. Value ange (Ω) Tolerance G ±5 % ± % Value The first two digits are significant figures of resistance and the third one denotes number of zeros following. Decimal point is expressed by (Ex.) :. Ω Tolerance EX SZ EX S Forming / Packaging S S S S 5S F F F 5F ±5 %. to.8. to 9. Straight lead wire type ± %. to.9. to 9. P Cut & Forming type V Axial taping type (Straight lead) U V Axial taping type (Stand off) E adial taping type (E type) E adial taping type (E type) H Cut & Forming type S E adial taping type (SE type) EXS ±5 %. to.8. to 9. EXF ± %. to.9. to 9. EXS ±5 %. to.. to 9. EXF ± %. to.9. to 9. EXS ±5 %. to.. to 9. EXF ± %. to.9. to 9. EX5S ±5 %. to 9. EX5F ± %. to 9. 4 G 5 6 S The matrix of forming and packaging is as shown in the table below. Forming & Taping matrix E The above example shows a small metal film resistor, power rating, resistance value of. Ω, tolerance ±5 %, and package of radial taping. Ex. : EG type Product Metal Oxide EG Film esistors Power ating at 7 C Style Specification S Small size.5 to 5 Small size Anti-heat conducting type F (Fe lead wire) to 5 Tolerance Value The first two digits are significant figures G ±5 % ± % of resistance and the third one denotes number of zeros following. Decimal point is expressed by (Ex.) : kω The matrix of forming and packaging is as shown in the table below. P V U V E E H S E Forming / Packaging Straight lead wire type Cut & Forming type Axial taping type(straight lead) Axial taping type(stand off) adial taping type(e type) adial taping type(e type) Cut & Forming type adial taping type(se type) Forming & Taping matrix S S S S 5S F F F 5F The above example shows a small metal oxide film resistor, power rating, resistance value of kω, tolerance ±5 %, and package of radial taping. 5 Sep. 4

53 Metal (Oxide) Film esistors Construction Dimensions in mm (not to scale) High reliable metal oxide fi lm (EG) High reliable metal plating fi lm (EX) ead wire S type : Cu wire F type : Fe wire ( ) k k fd fd Ceramic core (High ther mal con duc tiv i ty) D k d Mass (eight) [g/pc.] Spi ral ling turns Marking EG(X)S ±..65 ±.5.6 EG(X)S.65 ± ±.5. ±. EG(X)F.8 ±.5. End cap Flame and solvent retardant EG(X)S EG(X)F.+.5. EG(X)S EG(X)F 5.±.5 EG(X)5S EG(X)5F 4.±.5 4. ±.. ±..8 ± ±. 8. ±..8 ± ±. 8. ±..8 ±.5.54 atings Power ating at 7 C () imiting Element Voltage () (V) Maximum Overload Voltage () (V) Maximum Intermittent Overload Voltage () (V) Dielectric ith stand ing Voltage (VAC) EG(X)S EG(X)S EG(X)F EG(X)S EG(X)F EG(X)S EG(X)F EG(X)5S EG(X)5F () ated Continuous orking Voltage (CV) shall be determined from CV= Power ating Value or imiting Element Voltage listed above whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be determined from SOTV=.5 Power ating or max. Overload Voltage listed above whichever less. () Intermittent Overload Test Voltage (IOTV) shall be determined from IOTV=4. Power ating or max. Intermittent Overload Voltage listed above whichever less. es. Tol. (%) (4) ange (Ω) (5) min. (6) max. G (±) k (±5). 47 k G (±) 68 k (±5). k G (±) k (±5). k G (±) k (±5). k G (±) k (±5). k T.C.. ( 6 / C) Standard Value ±5 E4 ±5 E4 ±5 E4 ± E4 ± E4 (4) tolerance is of use besides range listed, please inquire. (5) ange Type EG : > Ω Type EX : <9. Ω (6) As for the low resistance value range, "Z" is given to the part number. (efer to the explanation of part numbers.) Z type is non standard resistance values. es.tol. es. Value ange es.tol. es. Value ange Z S ± %. to.9 Ω S ± %. to.9 Ω ±5 %. to.8 Ω F ±5 %. to. Ω Z S ± %. to.9 Ω S ± %. to.9 Ω F ±5 %. to.8 Ω F ±5 %. to. Ω Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 7 C 8 EG(X)S, F 6 EG(X)S, F EG(X)S EG(X)S, F 4 EG(X)5S, 5F C 5 C Ambient Temperature ( C) 5 Sep. 4

54 Metal (Oxide) Film esistors Packaging Methods Taped & Box EG(X) S V Stand-off Taped & Box EG(X) S U V 6.±.5 fd P P fd H H crush width.8 mm ( ). mm (, ) Part Number Standard Quantity (pcs./box) Taping (mm) Box (mm) P 5 P H d a b c EG(X) S V, 5. ±. 5 ± 5. ±.5.65 ± EG(X) S V, 5. ±. 5 ± 5. ±.5 ±.5.65 EG(X) S U V EG(X) S V, 5. ±. 5 ± 5. ±.5 ±.5.8 EG(X) S U V Marking a c b EG(X) S V,. ±.5 5 ± 74. ±. ±.5.8 EG(X) S U V Cut & Formed Type EG(X) S P S f.65±.5 (.5, ) f.8±.5 (,, 5 ) fd Upper surface h of P board h.8 (.5, ). (,, 5 ).±. (.5, ).4±. (,, 5 ) Part Number Standard Quantity (pcs./box) D S h h EG(X) S P, ±.5 4. ±.5 4. ±.5 EG(X) S P, ±.5.5 ±.5 4. ±.5 4. ±.5. EG(X) S P, ±. 5. ±.5 6. ±.5 4. ±.5. EG(X) S P, 5. ± ±.. ±. 6.5 ±.5 4. ±.5 EG(X) 5S P 5 4. ±.5 8. ±.. ±. 7.5 ±.5 4. ±.5 EG(X) F H S f.8±.5 fd Part Number Standard Quantity (pcs./box) D S h h EG(X)F H, ±.5.5 ±.5 8 ± 4. ±.5..4±. h Upper surface of P board h EG(X)F H, ±. 5. ±.5 6 ± 5. ±.5 EG(X)F H, 5. ± ±.. ±. ± 5. ±.5 EG(X)5F H 5 4. ±.5 8. ±.. ±. ± 5. ±.5 5 Sep. 4

55 Metal (Oxide) Film esistors Packaging Methods For Panasert Au to mat ic Insertion Machine adial Taped & Box EG(X) S E (S, S, S) Insulated ead P P fd A F P H H fd P fd P.7±. 8.±.5 S max. S D S P.7±. 9.±.5 H S max. A S S.8±.5 P.85±.7 S 8 max. S S 4.±. P 6.5±. H 6.±.5 d.65±.5 F 5.±.8 D 4.±. adial Tape Package Specifi cations b Marking a c Part Number a b c Standard Quantity (pcs./box) EG(X) S E 46 5, EG(X) S E 46 5, EG(X) S E 49 5, For Panasert Automatic Insertion Machine adial Taped & Box EG(X) S E (S, S, S, S) P P A B P F fd P fd H H fd S.7±. D S, S, S, S 4.±. P S, S, S.±. S P P P F S.7±. S A S, S, S 5.±. S S 6.5±. S 5.±.5 S, S, S 7.5±. S. max. S.85±.7 S 4. max. B S, S, S.75±.5 S 7. max. S 5.±.5 S. max. S, S, S 7.5±.8 S S, S, S, S 8.±.5 S.8±.5 D S, S, S, S 9.±.5 S 4.±. S 6.±.5 S 5.5±. H H S, S 8.±. S.65±.5 d S 9.±. S, S, S.8±.5 S S, S S Sep. 4

56 Metal (Oxide) Film esistors Packaging Methods For Panasert Automatic Insertion Machine adial Taped & Box EG(X) F S E (F, F, F) P P P.±. H.±. H A F H B fd P 5.±. D 4.±. P 7.5±. F P.75±.5 A F. +.5 F 7.5±.8 F 5.±.5.. P H 8.±.5 F 4 max. fd fd 9.±.5 B F 7 max. H F max. F D F.8±.5 P H F F 4.±. F F 5.5±. d.8±.5 adial Tape Package Specifi cations a b c Standard Quantity (pcs./box) EG(X) S E , EG(X) S E EG(X) F S E , b EG(X) S E EG(X) F S E Marking a c EG(X) F S E Sep. 4

57 Metal (Oxide) Film esistors Hot-spot Temperature (for eference) The temperature of the resistor body increases with the curve below. A touching vinyl wire may cause damages to resistor element. Do not place vinyl wires around resistors and be sure to consider where the resistors will be placed. Measuring position A B F-A Temperature T ( C) S-A S-B S-A S-B Temperature T ( C) S-A S-B F-B ated oad (%) ated oad (%) F-A S-A + 5F-A 5S-A Temperature T ( C) +5 + S-B F-B Temperature T ( C) S-B 5F-B ated oad (%) ated oad (%) Safety Precautions The following are precautions for individual products. Please also refer to the common precautions for Fixed esistors in this catalog.. Transient voltage If there is a possibility that the transient phenomenon (significantly high voltage applied in a short time) may occur or that a high voltage pulse may be applied, make sure to evaluate and check the characteristics of Metal(Oxide) Film esistors (hereafter called the resistors) mounted on your product rath er than only depending on the calculated pow er limit or steady-state conditions to complete the design or decide to use the resistors.. The resistors are covered with a special coating. Do not apply shock or vibration to them, or pinch them with long-nose pliers. Otherwise, the resistors may be damaged.. Do not apply excessive tension to the lead-connect ed sections. hen bending the lead wire, do not apply excessive stress to the resistors and provide the wire with a natural curvature. 4. Do not brush the resistors during or after the cleaning process, which may be conducted after soldering. Otherwise, the coating film may be damaged. 56 Sep. 4

58 Metal (Oxide) Film esistors (Data for eference) Pulse Char ac ter is tics (Usual) PP (VP) t P P V P : Pulse limit power () : Pulse limit voltage (V) t : Pulse continuous time (s) T : Period (s) V : ated voltage (V) P : ated power () : value (Ω) V p max. : Max. pulse limit volt age (V) T ithstand pulse limit power is calculated by the next method. P P = K P T/t V P = K P T/t eference to the right about a fixed number of V P max. T>(s) T=(s) T/t> T/t= P P<P P stands for P P (V P<V V stands for V P) Added voltage<v p max. P P or V P is referent value Conditions: Pulse added time= h change=±5 % oom temperature K Vp max. (V) EG(X) S.5 6 EG(X) S.5 6 EG(X) S.5 7 EG(X) S.5 7 EG(X) 5S.5 57 Sep. 4

59 Anti-Pulse Power esistors Anti-Pulse Power esistors Type: EGD (.5,,, ) Features Miniaturized Non-fl ammable Anti-Pulse Characteristic Automatic Insertion ohs compliant Explanation of Part Numbers E G D 4 Product Anti-Pulse Power esistors Power ating.5 Tolerance G ± % ±5 % Value The first two digits are significant figures of resistance and the third one denotes number of zeros following. (Ex.) 4 : kω V P U V E E Forming / Packaging Straight lead wire type Axial paping type (Straight lead) Cut & Forming type Axial paping type (Stand off) adial Taping type (E type) adial Taping type (E type) Forming & Taping matrix D D D D The above example shows an anti-pulse resistor, pow er rat ing, re sis tance value of k ohms, tolerance ±5 %, and pack age of stan dard bulk packing. Construction Dimensions in mm (not to scale) High reliable special fi lm ead wire k k fd fd Ceramic core (High ther mal con duc tiv i ty) Spi ral ling turns Marking D k d Mass (eight) [g/pc.] EGD ±..65 ±.5.6 EGD ±.5. ±..65 ±.5. Flame and solvent retardant EGD ±.. ±..8 ±.5.66 End cap EGD 5. ± ±. 8. ±..8 ± Sep. 4

60 Anti-Pulse Power esistors atings Power ating at 7 C () imiting Element Voltage () (V) Maximum Overload Voltage () (V) Maximum Dielectric Intermittent ith stand ing Overload Voltage Voltage () (V) (VAC) EGD EGD 5 5 EGD 5 7 EGD 5 7 es. Tol. (%) (±5) G (±) (±5) G (±) (±5) G (±) (±5) G (±) ange (Ω) (4) min. max. Standard Value 5 k 4 k E4 k k E4 k 5 k E4 k 75 k E4 () ated Continuous orking Voltage (CV) shall be determined from CV= Power ating Val ue or imiting Element Voltage list ed above whichever less. () Overload (Short-time Overload) Test Voltage (SOTV) shall be determined from SOTV=.5 Power ating or max. Overload Volt age list ed above which ev er less. () Intermittent Overload Test Voltage (IOTV) shall be determined from IOTV=4. Power ating or max. Intermittent Over load Volt age listed above whichever less. (4) tolerance and resistance range is of use besides range listed, please inquire. Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 7 C 8 EGD ~ D 6 EGD 4 C 5 C Ambient Temperature ( C) As for Packaging Methods and / or cut formed leads, Please see Metal (Oxide) Film esistors Packaging Methods Safety Precautions The following are precautions for individual products. Please also refer to the common precautions for Fixed esistors in this catalog.. Transient voltage If there is a possibility that the transient phenomenon (significantly high volt age applied in a short time) may occur or that a high voltage pulse may be applied, make sure to evaluate and check the characteristics of Anti-Pulse Power esistors (hereafter called the resistors) mount ed on your product rather than only depending on the calculated power limit or steady-state conditions to complete the design or decide to use the resistors.. The resistors are covered with a special coating. Do not ap ply shock or vibration to them, or pinch them with long-nose pliers. Otherwise, the resistors may be damaged.. Do not apply excessive tension to the lead-connect ed sections. hen bend ing the lead wire, do not apply excessive stress to the resistors and provide the wire with a natural curvature. 4. Do not brush the resistors during or after the cleaning process, which may be conducted after soldering. Otherwise, the coating film may be damaged. 59 Sep. 4

61 Metal Film esistors, ow e sis tance Value Metal Film e sis tors Type: EX (ow Value) (.5,, ) Features Miniaturized Non-fl ammable Automatic Insertion ohs compliant Explanation of Part Numbers E X 4 7 M EX Product Metal Film esistors Power ating.5 Special Feature Small size ow resistance value Tolerance ±5 % Value The first two digits are significant figures of resistance and it shows by the unit of the "mω". Decimal point is expressed by M as 47 mω = 47M. V P E E Forming / Packaging Straight lead wire type Axial paping type (Straight lead) Cut & Forming type adial Taping type (E type) adial Taping type (E type) Forming & Taping matrix The above example shows a small size and low resistance value met al film re sis tor, pow er rat ing, resistance value of 47 m ohms, tol er ance ±5 %, and pack age of standard bulk packing. Construction Dimensions in mm (not to scale) High reliable metal plating fi lm ead wire k k fd fd Ceramic core (High ther mal con duc tiv i ty) Spiral ling turns Marking D k d Mass (eight) [g/pc.] Flame and solvent retardant EX ±..65 ±.5.6 EX ±.5. ±..65 ±.5. End cap EX ±.. ±..8 ± Sep. 4

62 Metal Film esistors, ow e sis tance Value atings Power ating at 7 C () () Dielectric ith stand ing Voltage (VAC) es. Tol. (%) () ange (Ω) () min. max. EX.5 5 (±5) m 8 m T.C.. ( 6 / C) Standard Value to 9 mω=± EX 5 (±5) m 8 m E 47 to 8 mω=± 5 EX 6 (±5) m 8 m E () ated Continuous orking Voltage (CV) shall be determined from CV= Power ating Value. () tolerance and resistance range is of use besides range listed, please inquire. E Power Derating Curve For resistors operated in ambient temperatures above 7 C, power rating shall be derated in accordance with the figure on the right. ated oad (%) 55 C 7 C 8 EX, 6 EX 4 C 5 C Ambient Temperature ( C) As for Packaging Methods and / or cut formed leads, Please see Metal (Oxide) Film esistors Packaging Methods Safety Precautions The following are precautions for individual products. Please also refer to the common precautions for Fixed esistors in this catalog.. Transient voltage If there is a possibility that the tran sient phenomenon (significantly high volt age applied in a short time) may oc cur or that a high voltage pulse may be applied, make sure to evaluate and check the characteristics of Metal Film e sis tors (hereafter called the resistors) mount ed on your product rather than only depending on the cal cu lat ed power limit or steady-state conditions to complete the design or decide to use the resistors.. The resistors are covered with a special coating. Do not ap ply shock or vibration to them, or pinch them with long-nose pli ers. Otherwise, the re sis tors may be dam aged.. Do not apply excessive tension to the lead-con nect ed sec tions. hen bend ing the lead wire, do not apply ex ces sive stress to the resistors and provide the wire with a natural curvature. 4. Do not brush the resistors during or after the cleaning pro cess, which may be conducted after soldering. Otherwise, the coat ing film may be dam aged. 6 Sep. 4

63 Metal Film Fusing esistors Metal Film Fusing esistors Type: EQA EQZ (.5,.5,, coating type ) Features Accurate fusing Small size and lightweight Uniform quality, consistent per for mance and reliability Flame retardant, utilizing exclusive silicon insulation material eference Standard EIA C-5 ohs compliant Explanation of Part Numbers E Q A B Product Metal Film Fusing esistors Power ating at 7 C amb Special Feature A Z AB Z Standard ess than Ω Standard ess than Ω Tolerance ±5 % Value The first two digits are significant figures of resistance and the third one denotes number of zeros following.decimal point is expressed by as.=. Suffix for Packaging and/or Cut & Formed eads Nil P P S E E Std.bulk packing P type cut & formed P S type cut & formed adial Taped & Box adial Taped & Box The above example shows a standard Metal Film Fusing esistors, pow er rat ing, resistance val ue of Ω, tolerance of ±5 %, and pack age of stan dard bulk pack ing. Construction Metal alloy film ead wire Spiraling turns Insulative lacquer Ceramic core Marking End cap 6 Sep. 4