High Voltage EL Lamp Driver IC

Transcription

1 High Voltage EL Lamp Driver IC Features.V to.v operating supply voltage DC to AC conversion Output voltage regulation Adjustable output lamp frequency Adjustable converter frequency Enable/disable function Applications Pagers Portable Transceiver Cellular phones Remote control units Calculators General Description The Supertex HV is a high voltage driver designed for driving EL lamps. The input supply voltage range is from.v to.v. The device uses a single inductor and a minimum number of passive components. The nominal regulated output voltage that is applied to the EL lamp is ±V. The chip can be enabled/disabled by connecting the resistor on the RSW-Osc pin to /. The HV has two internal oscillators, a switching MOSFET, and a high voltage EL lamp driver. The frequency for the switching MOSFET is set by an external resistor connected between the RSW-Osc pin and the supply pin. The EL lamp driver frequency is set by an external resistor connected between REL-Osc pin and the pin. An external inductor is connected between the pin and pin. A.-.µF capacitor is connected between the pin and. The EL lamp is connected between the pin and the pin. The switching MOSFET charges the external inductor and discharges it into the capacitor at the pin. The voltage at will start to increase. Once the voltage at reaches a nominal value of V, the switching MOSFET is turned OFF to conserve power. The output pins and are confi gured as an H bridge and are switching in opposite states to achieve V peak-to-peak across the EL lamp. HV Block Diagram RSW Switch Osc Disable + C _ V REF V SEN Output Osc REL

2 Ordering Information Package Options Device -Lead SO -Lead MSOP HV HVLG HVLG-G HVMG HVMG-G -G indicates package is RoHS compliant ( Green ) Absolute Maximum Ratings Parameter Value Supply voltage, V DD -.V to +.V Output voltage, V -.V to +V Operating Temperature Range - C to + C Storage Temperature Range - C to + C MSOP- Power Dissipation mw SO- Power Dissipation mw Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Pin Configuration RSW-Osc REL-Osc HV Top View -Lead SOIC/ -Lead MSOP 7 Electrical Characteristics DC Characteristics (Over recommended operating conditions unless otherwise specifi ed - T A = C) Symbol Parameter Min Typ Max Units Conditions R DS(ON) On-resistance of switching transistor - -. Ω I = ma V I DD supply current (including inductor IN current) - ma V IN =.V. See Fig. I DD uiescent V DD supply current - - na R SW-Osc = LOW V Output voltage on V 7 V V DD =.V V A-B Differential output voltage across lamp 7 V V DD =.V -.V V A-B output drive frequency 7 Hz V IN =.V. See Fig. f SW Switching transistor frequency - - khz V IN =.V. See Fig. D Switching transistor duty cycle - - % See Fig. Recommended Operating Conditions V DD Supply voltage. -. V --- V A-B output drive frequency - Hz --- T A Operating temperature O C --- Enable/Disable Function Table EN-L Logic input low voltage -. V V DD =.V -.V EN-H Logic input high voltage V DD -. - V DD V V DD =.V -.V

3 Fig.: Typical Application ON = V DD OFF = Enable Signal + V IN _ V DD = V KΩ.MΩ RSW-Osc REL-Osc 7 N EL Lamp.7µF HVLG/MG L X µh.µf V Typical Performance Lamp Size V IN I DD V Brightness.in.V ma V Hz.ft-lm Notes:. Murata part # LHNK (DC resistance <.Ω) Typical Performance Curves for Fig. (.in Lamp) V S V vs. V IN I IN vs. V IN Brightness vs. V IN I IN vs. V 7 9 V ) ( ma), S I V 9 7 I IN, V, Brightness vs. Inductor Value V DD =.V V IN =.V 9 Inductor Value (µh)

4 Fig.: Typical Application IN =.V = V DD ) ON=V DD OFF= Enable Signal V IN = V DD + _ 7K.M RSW-Osc REL-Osc 7.KΩ N nf Equivalent to in lamp.7µf HVLG/MG L X * µh.µf V Typical Performance Lamp Size V IN I DD V Brightness.in.V ma V 9Hz.ft-lm Notes:. Murata part # LHNK Typical Performance Curves for Fig. (.in Lamp) V S V vs. V IN I IN vs. V IN Brightness vs. V IN I IN vs. V 7 9 V ) ( ma), S I V 9 7 I IN, V, Brightness vs. Inductor Value I IN ) V ) Brightness ) 7 9 Inductor Value (µh)......

5 -Lead SOIC (Narrow Body) Package (LG).9 ±.. ±..9 ±. Note Notes:. All dimensions in millimeters. Angles in degrees.. If the corner is not chamfered, then a Pin identifier must be located within the area indicated. Top View - ( PL) Note.7 MAX. MIN. -..7BSC Side View End View -

6 -Lead MSOP Package Outline (MG) xmm body,.mm height (max),.mm pitch D θ (x) E E Note (Index Area D/ x E/) L Gauge Plane L L θ Seating Plane A Top View View B View B A A A A e Side View b Seating Plane View A-A Note : A Pin identifi er must be located in the index area indicated. The Pin identifi er may be either a mold, or an embedded metal or marked feature. Symbol A A A b D E E e L L L θ θ Dimension NOM MIN O O..9. BSC REF BSC (mm) MAX O O JEDEC Registration MO-7, Variation AA, Issue E, Dec.. Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to Doc.# DSFP-HV A