Package Type. IXDD604D2TR 8-Pin DFN Tape & Reel Pin Power SOIC with Exposed Metal Back Tube 100
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1 -mpere Dual Low-Side Ultrafast MOSFET Drivers Features Source/Sink Drive Current Wide Operating oltage Range:. to - C to + C Extended Operating Temperature Range Logic Input Withstands Negative Swing of up to Outputs May be Connected in Parallel for Higher Drive Current Matched Rise and Fall Times Low Propagation Delay Time Low, Supply Current Low Output Impedance pplications Efficient Power MOSFET and IGBT Switching Switch Mode Power Supplies Motor Controls DC to DC Converters Class-D Switching mplifiers Pulse Transformer Driver Description The IXDD/IXDF/IXDI/IXDN dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. Each of the two outputs can source and sink of current while producing voltage rise and fall times of less than ns. The input of each driver is virtually immune to latch up, and proprietary circuitry eliminates cross conduction and current shoot-through. Low propagation delay and fast, matched rise and fall times make the family ideal for high-frequency and high-power applications. The IXDD is a dual non-inverting driver with an enable. The IXDN is a dual non-inverting driver, the IXDI is a dual inverting driver, and the IXDF has one inverting driver and one non-inverting driver. The family is available in a standard 8-pin DIP (PI), 8-pin SOIC (SI), 8-pin Power SOIC with an exposed metal back (SI), and an 8-pin DFN (D) package. Ordering Information Part Number Logic Configuration Package Type Packing Method Quantity IXDDDTR 8-Pin DFN Tape & Reel IXDDPI EN 8-Pin DIP Tube IXDDSI 8-Pin Power SOIC with Exposed Metal Back Tube IXDDSITR ENB 8-Pin Power SOIC with Exposed Metal Back Tape & Reel IXDDSI B 8-Pin SOIC Tube IXDDSITR 8-Pin SOIC Tape & Reel IXDFPI 8-Pin DIP Tube IXDFSI 8-Pin Power SOIC with Exposed Metal Back Tube IXDFSITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel IXDFSI B 8-Pin SOIC Tube IXDFSITR 8-Pin SOIC Tape & Reel IXDIPI 8-Pin DIP Tube IXDISI 8-Pin Power SOIC with Exposed Metal Back Tube IXDISITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel IXDISI B 8-Pin SOIC Tube IXDISITR 8-Pin SOIC Tape & Reel IXDNPI 8-Pin DIP Tube IXDNSI 8-Pin Power SOIC with Exposed Metal Back Tube IXDNSITR 8-Pin Power SOIC with Exposed Metal Back Tape & Reel IXDNSI B 8-Pin SOIC Tube IXDNSITR 8-Pin SOIC Tape & Reel DS--R9
2 . Specifications Pin Configurations Pin Definitions bsolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics: T = C Electrical Characteristics: - C < T < + C Thermal Characteristics Performance Timing Diagrams Characteristics Test Diagram Block Diagrams & Truth Tables IXDD IXDI IXDF IXDN Typical Performance Characteristics Manufacturing Information Moisture Sensitivity ESD Sensitivity Soldering Profile Board Wash Mechanical Dimensions R9
3 Specifications. Pin Configurations. Pin Definitions EN IXDDPI/SI/SI 8 ENB EN IXDDD 8 Pin Name Description 7 7 Channel Logic Input B Channel B Logic Input B IXDIPI/SI/SI ENB IXDFPI/SI/SI EN Channel Enable Input - Drive pin low to disable Channel and force Channel Output to a high impedance state NC 8 7 NC NC 8 7 NC ENB Channel B Enable Input - Drive pin low to disable Channel and force Channel Output to a high impedance state B B Channel Output - Sources or sinks current to turn-on or turn-off a discrete MOSFET or IGBT NC IXDNPI/SI/SI 8 NC Channel B Output - Sources or sinks current to turn-on or turn-off a discrete MOSFET or IGBT 7 Supply oltage - Provides power to the device B Ground - Common ground reference for the device. bsolute Maximum Ratings Parameter Symbol Minimum Maximum Units Supply oltage -. Input oltage INx, ENx - +. Output Current I OUT - ± Output Pulsed Current (. s) I out_pulsed - ± Junction Temperature T J - + C Storage Temperature T STG - + C bsolute maximum electrical ratings are at C bsolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.. Recommended Operating Conditions Parameter Symbol Range Units Supply oltage. to Operating Temperature Range T - to + C R9
4 . Electrical Characteristics: T = C Test Conditions:. < <, one channel (unless otherwise noted). Parameter Conditions Symbol Minimum Typical Maximum Units Input oltage, High. < < 8 IH. - - Input oltage, Low. < < 8 IL Input Current < IN < I IN - - ± High EN Input oltage IXDD only ENH / - - Low EN Input oltage IXDD only ENL - - / Output oltage, High - OH Output oltage, Low - OL - -. Output Resistance, High State =8, I OUT =-m R OH -.. Output Resistance, Low State =8, I OUT =m R OL -. Output Current, Continuous Limited by package power dissipation I DC - - ± Rise Time =8, OD =pf t r - 9 Fall Time =8, OD =pf t f - 8 On-Time Propagation Delay =8, OD =pf t ondly - 9 Off-Time Propagation Delay =8, OD =pf t offdly - Enable to Output-High Delay Time IXDD only, =8 t ENOH - Disable to High Impedance State Delay Time IXDD only, =8 t DOLD - Enable Pull-Up Resistor - R EN - - k =8, IN =. - m Power Supply Current =8, IN = I CC - < CC =8, IN = - <. Electrical Characteristics: - C < T < + C Test Conditions:. < <, one channel (unless otherwise noted). Parameter Conditions Symbol Minimum Maximum Units Input oltage, High. < < 8 IH. - Input oltage, Low. < < 8 IL -. Input Current < IN < I IN - Output oltage, High - OH -. - Output oltage, Low - OL -. Output Resistance, High State =8, I OUT =-m R OH - Output Resistance, Low State =8, I OUT =m R OL -. Output Current, Continuous Limited by package power dissipation I DC - ± Rise Time =8, OD =pf t r - Fall Time =8, OD =pf t f - On-Time Propagation Delay =8, OD =pf t ondly - Off-Time Propagation Delay =8, OD =pf t offdly - Enable to Output-High Delay Time IXDD only, =8 t ENOH - m Disable to High Impedance State Delay Time IXDD only, =8 t DOLD - =8, IN =. -. Power Supply Current =8, IN = I CC - CC =8, IN = - ns ns R9
5 .7 Thermal Characteristics Package Parameter Symbol Rating Units D (8-Pin DFN) PI (8-Pin DIP) Thermal Resistance, Junction-to-mbient J SI (8-Pin Power SOIC) 8 C/W SI (8-Pin SOIC) SI (8-Pin Power SOIC) Thermal Resistance, Junction-to-Case JC C/W Performance. Timing Diagrams IH IH INx IL INx IL t offdly t ondly OUTx 9% % t ondly OUTx 9% % t offdly t f t r t r t f. Characteristics Test Diagram.μF μf + - OD Tektronix Current Probe IN EN ENB OD Tektronix Current Probe R9
6 Block Diagrams & Truth Tables. IXDD. IXDF IXDD IXDF kω EN kω ENB IN X EN X OUT X or open or open Z Z. IXDI. IXDN IXDI IXDN IN X OUT X IN X OUT X R9
7 Typical Performance Characteristics &B Rise Times vs. Supply oltage (Input=-, f=khz, T =ºC) &B Fall Times vs. Supply oltage (Input=-, f=khz, T =ºC) &B Rise and Fall Times vs. Temperature (Input=-, =8, =nf) Rise Time (ns) 8 =nf =nf =7pF Fall Time (ns) 8 =nf =nf =7pF Rise & Fall Times (ns) t r t f Rise Time (ns) 8 &B Rise Time vs. Load Capacitance at arious Levels =. =8 = =8 = = Fall Time (ns) 8 &B Fall Time vs. Load Capacitance at arious Levels =. =8 = =8 = = 8 Load Capacitance (pf) 8 Load Capacitance (pf) Propagation Delay (ns) 8 Propagation Delay vs. Supply oltage ( IN =-, =nf, f=khz) t ondly t offdly Propagation Delay (ns) 7 Propagation Delay vs. Input oltage ( =, =nf) t offdly t ondly 8 Input oltage () Propagation Delay (ns) Propagation Delay vs. Temperature t offdly t ondly Input Threshold oltage () Input Threshold oltage vs. Temperature ( =8, =nf) Min IH Max IL Input Threshold () Input Threshold vs. Supply oltage IH IL Enable Threshold () Enable Threshold vs. Supply oltage 8 ENH ENL 8 R9 7
8 Supply Current vs. Load Capacitance Both Outputs ctive ( =) f=mhz f=mhz f=khz f=khz f=khz f=khz Load Capacitance (pf) Supply Current vs. Load Capacitance Both Outputs ctive ( =8) f=mhz f=khz f=khz f=khz f=mhz Load Capacitance (pf) Supply Current vs. Load Capacitance Both Outputs ctive ( =) f=mhz f=mhz f=khz f=khz f=khz Load Capacitance (pf) Supply Current vs. Load Capacitance Both Outputs ctive ( =8) f=mhz f=mhz f=khz f=khz f=khz Load Capacitance (pf) Supply Current vs. Frequency Both Outputs ctive ( =) =nf =nf =7pF Frequency (khz) Supply Current vs. Frequency Both Outputs ctive ( =8) =nf =nf =7pF. Frequency (khz). Supply Current vs. Frequency Both Outputs ctive ( =) =nf =nf =7pF. Frequency (khz). Supply Current vs. Frequency Both Outputs ctive ( =8) =nf =nf =7pF. Frequency (khz)..... Quiescent Supply Current vs. Temperature ( =8) IN =. IN = IN =. IN = & Dynamic Supply Current vs. Temperature ( =8, IN =, f=khz, =nf) Output Source Current () Output Source Current vs. Supply oltage ( =nf) Output Sink Current () 8 Output Sink Current vs. Supply oltage ( =nf) 8 R9
9 Output Source Current vs. Temperature ( =8, =nf) Output Sink Current vs. Temperature ( =8, =nf) Output Source Current () Output Sink Current () Resistance (Ω) High State Output Resistance vs. Supply oltage (I OUT = -m). Resistance (Ω) Low State Output Resistance vs. Supply oltage (I OUT = +m). R9 9
10 Manufacturing Information. Moisture Sensitivity ll plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classifies its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) classification as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-. Device Moisture Sensitivity Level (MSL) Classification ll ersions MSL. ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-.. Soldering Profile Provided in the table below is the Classification Temperature (T C ) of this product and the maximum dwell time the body temperature of this device may be (T C - )ºC or greater. The classification temperature sets the Maximum Body Temperature allowed for this device during lead-free reflow processes. For through-hole devices, and any other processes, the guidelines of J-STD- must be observed. Device Classification Temperature (T C ) Dwell Time (t p ) Max Reflow Cycles SI / SI / D C seconds PI C seconds -. Board Wash IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. Board washing to reduce or remove flux residue following the solder reflow process is acceptable provided proper precautions are taken to prevent damage to the device. These precautions include but are not limited to: using a low pressure wash and providing a follow up bake cycle sufficient to remove any moisture trapped within the device due to the washing process. Due to the variability of the wash parameters used to clean the board, determination of the bake temperature and duration necessary to remove the moisture trapped within the package is the responsibility of the user (assembler). Cleaning or drying methods that employ ultrasonic energy may damage the device and should not be used. dditionally, the device must not be exposed to flux or solvents that are Chlorine- or Fluorine-based R9
11 . Mechanical Dimensions.. SI (8-Pin SOIC). /. (. /.) 8x TOP IEW PCB Land Pattern. (.).8 /. (.8 /.).8 /. (. /.7).7 (.8).7 MX (.9 MX) PIN #. MIN (.9 MIN).7. x.8 /. (.89 /.97) GUGE PLNE SETING PLNE. (.) 8 -. /. (. /.). /.7 (. /.). (.). /. (. /.). (.) Dimensions MIN / MX Notes:. Controlling dimension: millimeters.. ll dimensions are in mm (inches).. This package conforms to JEDEC Standard MS-, variation, Rev. F.. Dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed.mm per end.. Dimension does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed.mm per side.. Lead thickness includes plating... SI (8-Pin Power SOIC with Exposed Metal Back). /. (. /.) 8x TOP IEW BOTTOM IEW PCB Land Pattern. (.). (.).8 /. (.8 /.).8 /. (. /.7). /. (.8 /.9).8 (.). (.88) PIN #. MIN (.9 MIN).7. x.8 /. (. /.). (.).7 MX (.7 MX) /. ( /.).8 /. (.89 /.97). (.) GUGE PLNE SETING PLNE. (.) 8 -. /. (. /.). /.7 (. /.) Dimensions MIN / MX Notes:. Controlling dimension: millimeters.. ll dimensions are in mm (inches).. This package conforms to JEDEC Standard MS-, variation B, Rev. F.. Dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed.mm per end.. Dimension does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed.mm per side.. The exposed metal pad on the back of the package should be connected to. It is not suitable for carrying current. 7. Lead thickness includes plating. R9
12 .. Tape & Reel Information for SI and SI Packages. DI. (. DI.) Top Cover Tape Thickness. MX. (. MX.) B =. (.9) W=. (.7) K =. (.8) =. (.) P=8. (.) Embossed Carrier User Direction of Feed Dimensions mm (inches) Embossment NOTE: Tape dimensions not shown comply with JEDEC Standard EI-8-.. PI (8-Pin DIP). ±.7 (. ±.). ±.7 (. ±.) 9. ±.8 (.8 ±.) 7. ±. (. ±.) 9. ±.8 (. ±.) 8-.8 DI. (8-. DI.) PCB Hole Pattern. ±.7 (. ±.) Pin.7 ±.7 (.8 ±.). TYP (.). ±. (. ±.) 7.9 TYP. (.8). ±.7 (. ±.) 7. ±.7 (. ±.) 7. ±.7 (. ±.).8 ±. (. ±.) Dimensions mm (inches) R9
13 .. D (8-Pin DFN) Pin. BSC (.97 BSC).8 /. (. /.9). REF (.8 REF).9 (.7). x º (. x º). (.77). BSC (.7 BSC). (.8). (.).7 /.8 (.9 /.). (.). (.7). (.).9 BSC (.7 BSC). /. x º (. /.8 x º) Pin Pin 8. /. (. /.8). /. (. /.). /. (.9 /.) Recommended PCB Land Pattern Dimensions mm MIN / mm MX (inches MIN / inches MX) NOTE: The exposed metal pad on the back of the D package should be connected to. Pad is not suitable for carrying current... Tape & Reel Information for D Package. DI. (. DI.) R.7 TYP. ±. See Note #. ±.. ±..7 ±. Top Cover Tape Thickness. MX. (. MX.) º MX (.). ±. B =. ±. (.). ±. Embossed Carrier K =.9 ±. P=8. ±.. (MIN) Embossment. ±. º MX =. ±. NOTES:. & B measured at.mm above base of pocket.. pitches cumulative tol. ±.mm. ( ) Reference dimensions only.. Unless otherwise specified, all dimensions in millimeters. For additional information please visit our website at: IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. Specification: DS--R9 Copyright 7, IXYS Integrated Circuits Division ll rights reserved. Printed in US. //7 R9
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CPC96 Single-Pole, Normally Open Power SIP OptoMOS Relay Parameter Rating Units Blocking Voltage 6 V P Load Current 2 A rms / A DC On-Resistance (max.3 Features Handle Load Currents Up to 2A rms 2V rms
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Single-Pole, Normally Open OptoMOS Power SIP Relay Parameter Rating Units Blocking Voltage 1 V P Load Current.18 A rms On-Resistance (max 18 Features Handle Load Currents Up to.a V rms Input/Output Isolation
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CPC217N Dual Normally Open 8-Pin SOIC OptoMOS Relay Parameter Rating Units Blocking Voltage 6 V P Current 12 ma rms / ma DC On-Resistance (max) 16 LED Current to operate 1 ma Features Designed for use
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Dual Single-Pole 8-Pin SOIC OptoMOS Relay Parameter Rating Units Blocking Voltage 6 V P Current 12 ma rms / ma DC On-Resistance (max) 16 LED Current to operate 1 ma Features 1V rms Input/Output Isolation
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LBA7 Dual Single-Pole OptoMOS Relay Normally Open & Normally Closed Parameter Rating Units Blocking Voltage 6 V Load Current A rms / A DC On-Resistance (max).6 LED Current to Operate 2 ma Features Low
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CPC23N 3V Dual Normally-Open Single-Pole 8-Pin SOIC OptoMOS Relay Parameter Rating Units Blocking Voltage 3 V P Current 12 ma rms / ma DC On-Resistance (max) 3 LED Current to operate 2 ma Features 1V rms
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CPC23N Dual Single-Pole, Normally Open 8-Pin SOIC OptoMOS Relay Parameter Rating Units Blocking Voltage 3 V P Current 12 ma rms / ma DC On-Resistance (max) 3 LED Current to operate 2 ma Features 1V rms
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AC Power Switch Parameter Rating Units AC Operating Voltage - 24 V rms Load Current 3 A rms On-State Voltage Drop.8 V rms (at = 3A rms Blocking Voltage 6 V P Features Load Current up to 3A rms 6V P Blocking
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CPC176 Single-Pole, Normally Open 4-Pin OptoMOS DC Power SIP Relay Parameter Rating Units Blocking Voltage 6 V P Load Current 4 A DC On-Resistance (max).9 Features Handle Load Currents Up to 4A DC 2V rms
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AC Power Switch Parameter Rating Units AC Operating Voltage 2-24 V rms Load Current 3 A rms On-State Voltage Drop.8 V rms (at = 3A rms Blocking Voltage 8 V P Features Load Current up to 3A rms 8V P Blocking
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PLA Single Pole, Normally Open OptoMOS Relay Parameter Rating Units Maximum Turn-On/Turn-Off Times s Blocking Voltage V P Load Current ma rms / ma DC On-Resistance (max Features Fastest Switching OptoMOS
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CPC12N 3V Normally-Open Single-Pole 4-Pin SOP OptoMOS Relay Parameter Rating Units Blocking Voltage 3 V P Load Current 1.2 A DC On-Resistance (max).2 Features 1V rms Input/Output Isolation Small 4-Pin
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6V Normally-Closed Single-Pole 4-Pin SOP OptoMOS Relay Parameter Rating Units Blocking Voltage 6 V P Load Current 4 ma rms / ma DC Max On-Resistance 2 LED Current to Operate 2 ma Features V rms Input/Output
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CPC117N 6V Normally-Open Single-Pole 4-Pin SOP OptoMOS Relay Parameter Rating Units Blocking Voltage 6 V P Load Current 1 ma rms / ma DC On-Resistance (max) 16 LED Current to operate 1 ma Features Designed
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CPC133 Single Pole OptoMOS Relay with Bi-directional Transient Protection Parameters Ratings Units Blocking Voltage 3 V P Load Current 1 ma rms / ma DC On-Resistance (max 3 LED Current to Operate 1 ma
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Single-Pole, Normally Open 4-Pin SOP OptoMOS Relay Parameter Rating Units Blocking Voltage 6 V P Load Current 7 ma DC On-Resistance (max). LED Current to operate 2 ma Features Designed for use in security
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LCB12 Single-Pole, Normally Closed OptoMOS Relay Parameter Ratings Units Blocking Voltage 2 V P Load Current 17 ma rms / ma DC On-Resistance (max 2 Features 37V rms Input/Output Isolation Low Drive Power
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Dual Single-Pole, Normally Closed OptoMOS Relay Parameter Ratings Units Blocking Voltage 2 V P Load Current 17 ma rms / ma DC On-Resistance (max 1 Features 37V rms Input/Output Isolation Low Drive Power
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Characteristics Parameter Rating Units Blocking Voltage 2 V P Load Current, T A =2 C: With C/W Heat Sink 6.7 No Heat Sink 2.7 Features 6.7A rms Load Current with C/W Heat Sink Low.2 On-Resistance 2V P
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AC Power Switch Parameter Rating Units AC Operating Voltage 2-24 V rms Load Current 2 A rms On-State Voltage Drop. V rms (at I L = 2A rms ) Blocking Voltage 6 V P Features Load Current up to 2A rms 6V
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Parameter Rating Units Blocking Voltage 7 V P Load Current 1 ma rms / ma DC On-Resistance (max) 1 LED Current to Operate 1 ma Transient Protection Characteristics Peak Pulse Power V WM W 4.2V Features
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Single-Pole, Normally Closed 4-Pin SOP OptoMOS Relay Parameter Rating Units Blocking Voltage 4 V P Load Current 1 ma rms / ma DC On-Resistance (max) 3 LED Current to Operate 2 ma Features 1V rms Input/Output
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CPC114N Single-Pole, Normally Open 4-Lead SOP OptoMOS Relay Parameter Rating Units Blocking Voltage 6 V P Load Current 4 ma rms / ma DC On-Resistance (max) 2 LED Current to operate 2 ma Features Designed
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Characteristics Parameter Rating Units Blocking Voltage 1 V P Load Current, T A = C: With C/W Heat Sink.4 No Heat Sink 1 Features.4A DC Load Current with C/W Heat Sink Low 1. On-Resistance 1V P Blocking
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CPC12N Single-Pole, Normally Open 4-Lead SOP OptoMOS Relay Parameter Rating Units Blocking Voltage 3 V P Load Current 1.2 A DC On-Resistance (max).2 Features 1V rms Input/Output Isolation Small 4-Lead
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Low Charge Injection, 8-Channel High Voltage Analog Switch Features Processed with BCMOS on SOI (Silicon On Insulator) Flexible High Voltage Supplies up to V PP -V NN =200V C to 10MHz Analog Signal Frequency
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CPC117N Single-Pole, Normally Open 4-Lead SOP OptoMOS Relay Parameter Rating Units Blocking Voltage 6 V P Load Current 1 ma rms / ma DC On-Resistance (max) 16 LED Current to operate 1 ma Features Designed
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Dual Single-Pole, Normally Open OptoMOS Relay Parameter Ratings Units Blocking Voltage 2 V P Load Current 17 ma rms / ma DC On-Resistance (max 1 Features Current Limiting Device 37V rms Input/Output Isolation
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Dual Single-Pole OptoMOS Relay Parameter Ratings Units Blocking Voltage 250 V P Load Current 250 ma rms / ma DC On-Resistance (max) 7 Features 3750V rms Input/Output Isolation Low Drive Power Requirements
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XAA7 Dual Single-Pole, Normally Open OptoMOS Relay Parameter Rating Units Blocking Voltage 3 V P Load Current ma rms / ma DC On-Resistance (max Input Control Current ma Features 37V rms Input/Output Isolation
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Single-Pole, Normally Closed 4-Pin SOP OptoMOS Relay Parameter Rating Units Blocking Voltage V P Load Current 1 ma rms / ma DC On-Resistance (max) Features V rms Input/Output Isolation Low Drive Power
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CPC1N Single-Pole, Normally Open 4-Pin SOP OptoMOS Relay Parameter Rating Units Blocking Voltage V P Load Current 7 ma rms / ma DC On-Resistance (max) 1 LED Current to operate. ma Features Designed for
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Characteristics Parameter Rating Units Blocking Voltage 2 V P Load Current, T A =2 C: With C/W Heat Sink 8.6 No Heat Sink 3.4 Features 8.6A DC Load Current with C/W Heat Sink Low.9 On-Resistance 2V P Blocking
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IAA11P Integrated Telecom Circuits Parameter Rating Units Blocking Voltage 3 V P Load Current 1 ma rms / ma DC On-Resistance (max 3 Features 37V rms Input/Output Isolation Three Functions in One Package
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