The following document contains information on Cypress products.

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1 The following document contains information on Cypress products.

2 FUJITSU MICROELECTRONICS DATA SHEET DS Ea ASSP for Power Supply Applications Evaluation Board MB39A06 DESCRIPTION The MB39A06 evaluation board is a surface mount circuit board with two channels of down conversion circuit. The output voltage is internally set to 5.0 V and 3.3 V. The maximum current 3.0 A is supplied from the power supply voltage between 7.0 V and 5.0 V. MB39A06 has a circuit configuration with no sense resistor as it is provided with overcurrent protection, eliminating the need for an external sense resistor. The output is stopped by the thing that various protection function turn off the output transistor in the output short-circuit or the low VCC, or the over voltage operation. In addition, each channel can be controlled to be turned on and off can be set for a soft-start. Since the MB39A06 evaluation board is the same circuit configuration of the MB3889 evaluation board, it is recommended to make comparative study about the reduction of external parts with the built-in Bootstrap diode. EVALUATION BOARD SPECIFICATIONS (Ta = +25 C) Parameter Value Min Typ Max Unit Input voltage V Oscillation frequency khz Output voltage (CH) (CH2) V Output current (CH) (CH2) A Output ripple voltage (CH) 33 (CH2) 50 mv Soft-start time (CH) (CH2) ms Discharge time (CH) (CH2) ms (Continued) Copyright FUJITSU MICROELECTRONICS LIMITED All rights reserved

3 (Continued) Parameter *: The values are calculated at fixed VIN = 2 V (Typ) and Ron = 28.5 Ω. Value Min Typ Max Short-circuit detection time ms Detection voltage of overvoltage protection Detection current of overcurrent protection * (CH) (CH2) (CH) (CH2) Unit V A TERMINAL DESCRIPTION Symbol VIN Vo, Vo2 CTL CTL, CTL2 PWRGOOD PGND SGND Function Power supply terminal VIN = 7 V to 5 V (Typical value : 2 V) DC/DC converter output terminal Power supply control terminal VCTL = 0 V to 0.8 V : Standby mode VCTL = 2.0 V to VIN : Operation mode CH control terminal VCTL, 2 = GND : Output OFF VCTL, 2 = OPEN : Output ON Protection state output terminal Output L ( = 0 V) is fixed at protection operation. DC/DC converter GND terminal MB39A06 GND terminal SWITCH DESCRIPTION SW Name Function ON OFF CTL Power supply control Operation mode Standby mode 2 CTL CH control Output OFF Output ON 3 CTL2 CH2 control Output OFF Output ON SETUP AND CHECKUP () Setup Connect the power supply terminal side to VIN and GND. Connect the Vo side to the required loading device or measuring instrument. Set SW(CTL) to OFF (standby mode), and SW2,3 to ON (output OFF). (2) Checkup VIN (power supply) set to ON. Then, SW(CTL) set to ON (operation mode), and SW2,3 set to OFF (output ON). The IC works normally with the following outputs: VO = 3.3V (Typ), VO2 = 5V(Typ). 2

4 COMPONENT LAYOUT On-board Component Layout C26 C8 Q2 L2 C7A C7B C7C C8 PGND2 VO2 PGND C C2 VIN C24 R5 R7 R6 D2 R C23 D R2 R3 C6 6 C9 C6 C3 30 M 5 C20 C2 R4 R5 R6 R8 C4 R8 C9 C0 R9 R0 R3 R C22 R7 C3 R4 C5 C R2 C SW CTL2 CTL SGND PWRGOOD CTL VO C25 C7 Q L C4A C4B C4C C5 PGND (Continued) 3

5 (Continued) Board Layout Top Side Inside GND (LAYER2) Inside VIN & GND (LAYER3) Bottom Side 4

6 CONNECTION DIAGRAM VIN IIN C C2 C8 0. μf Q IRF790D L 22 μh IO CH VO (3.3 V/3.0 A) PGND C25 82 μf C7 0. μf R2 0 Ω R3 0 Ω Q2 IRF790D C4A 50 μf L2 22 μh C4B C4C IO C5 0. μf PGND CH2 VO2 (5 V/3.0 A) C26 82 μf R.3 kω R6 0 Ω R7 0 Ω C7A C7B C7C 50 μf C8 0. μf PGND2 C23 SW CTL CTL CTL2 C24 C3 0. μf C6 0. μf R5.3 kω D D IC MB39A06 C9 4.7 μf C6 0. μf R3 430 Ω R0 0 kω R2 6.2 kω SW3 R C2 SW2 C9 R9 3 kω C μf C 0. μf R8 47 kω C5 0. μf C μf C3 0. μf C4 0.0 μf R4 00 kω R4 3 kω C20 R8 C22 R6 20 Ω R5 0 kω R7 3.3 kω SGND PWRGOOD 5

7 PARTS LIST Symbol Part name Model name Specification Package Manufacturer Note M IC MB39A06 MB39A06 FPT-30P-M04 Q, Q2 Dual FETKY TM IRF790D Main side : VDS = 30 V, Qg = 0.5 nc (Max) Synchronous side : VDS = 30 V, Qg = 8.3 nc (Max) SBD : VF = 0.52V(Max) at IF = A Note : OS-CON is a trademark of SANYO Electric Co., Ltd. Dual FETKY is a trademark of International Rectifier Corp. SO-8 FUJITSU MICROELEC- TRONICS D, D2 L L2 Inductor Inductor SLF2565T- 220M3R5 SLF2565T- 220M3R5 22 μh, IDC = 3.5 A, RDC = 3.6 mω, IDC2 = 3.8 A 22 μh, IDC = 3.5 A, RDC = 3.6 mω, IDC2 = 3.8 A SMD SMD C C2 Ceramic C3, C6 C608JBH04K 0. μf (50 V) 608 type TDK condenser C4 OS-CON TM 6SVP50M 50 μf (6.3 V) SANYO Ceramic C5, C8 C608JBH04K 0. μf (50 V) 608 type TDK condenser C7 OS-CON TM 6SVP50M 50 μf (6.3 V) SANYO C9 C0 C, C3 C2 C4 C5 C6 C7, C8 Ceramic condenser Ceramic condenser Ceramic condenser Ceramic condenser Ceramic condenser Ceramic condenser Ceramic condenser Ceramic condenser C326JBA475 M IR TDK TDK 4.7 μf (0 V) 326 type. TDK C608JBH223K μf (50 V) 608 type TDK C608JBH04K 0. μf (50 V) 608 type TDK C608JBH223K μf (50 V) 608 type TDK C608JBH03K 0.0 μf (50 V) 608 type TDK C608JBH04K 0. μf (50 V) 608 type TDK C608JBH04K 0. μf (50 V) 608 type TDK C608JBH04K 0. μf (50 V) 608 type TDK Not mounted Not mounted Not mounted (Continued) 6

8 (Continued) Symbol Part name Model name Specification Package Manufacturer Note C9 C20 C2 C22 C23 C24 C25, C26 OS-CON TM 6SVP82M 82 μf (6 V) SANYO R Resistor RR086P-32-D.3 kω (0.5%) 608 type ssm R2, R3, R6, R7 Jumper RK73ZJ 0 Ω 608 type KOA R4 Resistor RR086P-04-D 00 kω (0.5%) 608 type ssm R5 Resistor RR086P-32-D.3 kω (0.5%) 608 type ssm R8 Resistor RR086P-473-D 47 kω (0.5%) 608 type ssm R9 Resistor RR086P-33-D 3 kω (0.5%) 608 type ssm R0 Resistor RR086P-03-D 0 kω (0.5%) 608 type ssm R R2 Resistor RR086P-622-D 6.2 kω (0.5%) 608 type ssm R3 Resistor RR086P-43-D 430 Ω (0.5%) 608 type ssm R4 Resistor RR086P-33-D 3 kω (0.5%) 608 type ssm R5 Resistor RR086P-03-D 0 kω (0.5%) 608 type ssm R6 Resistor RR086P-2-D 20 Ω (0.5%) 608 type ssm R7 Resistor RR086P-332-D 3.3 kω (0.5%) 608 type ssm R8 SW DIP switch DAS-4H 4 pole MATSUKYU Terminal pins WT-2- WT-2- MacEight Not mounted Not mounted Not mounted Not mounted Not mounted Not mounted Not mounted Not mounted IR ROHM SANYO TDK ssm KOA MATSUKYU MacEight International Rectifier Corp. ROHM Co., Ltd. SANYO Electric Co., Ltd. TDK Corporation. SUSUMU CO., LTD. KOA Corporation. Matsukyu Co., Ltd. MacEight Co., Ltd. 7

9 INITIAL SETTINGS () Output voltage CH VO (V) =.23 / R2 (R0 + R2 + R3) := 3.3 (V) CH2 VO2 (V) =.23 / R7 (R5 + R6 + R7) := 5.0 (V) (2) Oscillation frequency fosc (khz) = 400 / R8 (kω) := 300 (khz) (3) Soft-start time CH ts (s) = 0.4 C (μf) := 4.0 (ms) CH2 ts (s) = 0.4 C3 (μf) := 4.0 (ms) (4) Discharge time CH toff (s) = C (μf) := 2.0 (ms) CH2 toff (s) = C3 (μf) := 2.0 (ms) (5) Short-circuit detection time tscp (s) = C4 (μf) := 0.70 (ms) (6) Detection voltage of overvoltage protection CH VOVP (V) =.2 VO := 3.7 (V) CH2 VOVP (V) =.2 VO2 := 5.6 (V) (7) Detection current of overcurrent protection CH (ILIM = 8 μa, RON = 28.5 mω, VIN = 2 V, VO = 3.3 V) IOCP (A) = (ILIM R / RON) ( (VIN VO) VO / 2 / VIN / fosc / L) := 5.20 (A) CH2 (ILIM = 8 μa, RON = 28.5 mω, VIN = 2 V, VO2 = 5.0 V) IOCP (A) = (ILIM R5 / RON) ( (VIN VO2) VO2 / 2 / VIN / fosc / L2) := 5.6 (A) 8

10 REFERENCE DATA () Load current vs. conversion efficiency characteristics (VIN = 2 V) ch ch2 Convertion efficiency η (%) 00% 90% 80% 70% 60% 50% 40% Efficiency η (%) = (VO IO)/ (VIN IIN) 00 VIN = 2 V Setting VO = 3.3 V CTL = OPEN CTL2 = GND 30% 0 m 00 m 0 Convertion efficiency η (%) 00% 90% 80% 70% 60% 50% 40% VIN = 2 V Setting VO = 5 V CTL = OPEN CTL2 = GND Efficiency η (%) = (VO IO)/(VIN IIN) 00 30% 0 m 00 m 0 Load current IO (A) SW : ON SW2 : OFF SW3 : ON Load current IO (A) SW : ON SW2 : ON SW3 : OFF (2) Load Reguration (VIN = 2 V) ch 3.34 ch Output voltage VO (V) VIN = 2 V 3.27 CTL = OPEN CTL2 = GND m 00 m 0 Output voltage VO (V) VIN = 2 V 4.97 CTL = GND CTL2 = OPEN m 00 m 0 Load current IO (A) SW : ON SW2 : OFF SW3 : ON Load current IO (A) SW : ON SW2 : ON SW3 : OFF 9

11 (3) Line regulation ch 3.34 ch Output voltage VO (V) IO =.5 A 3.27 CTL = OPEN CTL2 = GND Output voltage VO (V) IO =.5 A 4.97 CTL = GND CTL2 = OPEN Input voltage VIN (V) SW : ON SW2 : OFF SW3 : ON Input voltage VIN (V) SW : ON SW2 : ON SW3 : OFF 0

12 (4) Output ripple waveforms (VIN = 2 V) ch IO = 0 A 50 mv 0 50 mv μs/div IO =.5 A 50 mv 0 50 mv μs/div IO = 3 A 50 mv 0 50 mv μs/div SW : ON SW2 : OFF SW3 : ON

13 ch2 IO = 0 A 50 mv 0 50 mv μs/div IO =.5 A 50 mv 0 50 mv μs/div IO = 3 A 50 mv 0 50 mv μs/div SW : ON SW2 : ON SW3 : OFF 2

14 (5) Output waveform at load sudden change (VIN = 2 V) ch ch2 50 mv 50 mv mv 50 mv 4 A 4 A 2 A 0 ms/div 2 A 0 ms/div SW : ON SW2 : OFF SW3 : ON SW : ON SW2 : ON SW3 : OFF (6) Overcurrent protection operation characteristics (VIN = 2 V) ch ch2 OCP detection current IOCP (A) VIN = 2 V CTL = OPEN, CTL2 = GND ILIM = 8 μa, RON = 28.5 mω OCP detection current IOCP (A) VIN = 2 V CTL = GND, CTL2 = OPEN ILIM = 8 μa, RON = 28.5 mω RLIM (kω) RLIM = R SW : ON SW2 : OFF SW3 : ON RLIM (kω) RLIM = R5 SW : ON SW2 : ON SW3 : OFF 3

15 COMPONENT SELECTION METHODS Ch2 side N-ch MOS FET Inductor Output smoothing condenser C26 C8 Q2 L2 220 C7A C7B C7C C8 PGND2 VO2 R7 R6 R8 CTL2 PGND C VIN C24 R5 R6 D2 R C23 D R2 C2 R4 R5 6 5 C6 C20 C9 C4 C6 R8 C3 30 M C9 C0 R9 R0 C22 R7 C3 R4 C5 C R2 C SW CTL SGND PWRGOOD C2 R3 R3 R CTL Q 220 C5 VO C25 C7 L C4A C4B C4C PGND N-ch MOS FET Inductor Output smoothing condenser ch side Board Photograph 4

16 The following subsections show the component selection methods with the following common parametric values. CH : 3.3 V output VIN (Max) = 5 V, Io = 3 A, fosc = 300 khz. N-ch MOS FET (IRF790D(IR product)) Main side VDS = 30 V, VGS = ± 20 V, ID = 6.2 A, RDS (on) = 38 mω (Max), Qg = 0.5 nc (Max) Synchronous rectifier side VDS = 30 V, VGS = ± 20 V, ID = 6.2 A, RDS (on) = 32 mω (Max), Qg = 8.3 nc (Max) Diode VF (forward voltage) = 0.52 V (Max) at IF = A Drain current : peak value The peak drain current of this FET must be within its rated current. If the FET s peak drain current is ID, it is obtained by the following formula. Main side VIN (Max) Vo ID IO + ton 2L A Synchronous rectifier side Vo ID IO + toff 2L ( 0.22) 3.20 A 5

17 2. Inductor (SLF2565T-220M3R5: TDK product) 22 μh (tolerance ± 20%), rated current = 3.5 A L value at full load current condition: Peak-to-peak value of ripple current should be set under half load-current. L 2 (VIN (Max) Vo) ton IO 2 (5 3.3) μh The load current satisfying the continuous current condition is obtained by the following formula. IO Vo toff 2L ( 0.22) 95 ma Ripple current : peak value The peak ripple current must be within the rated current of the inductor. If the peak ripple current is IL, it is obtained by the following formula. IL IO + VIN (Max) Vo ton 2L A Ripple current : peak-to-peak value If the peak-to-peak ripple current is ΔIL, it is obtained by the following formula. ΔIL = VIN (Max) Vo ton L = := 0.39 A 6

18 3. Output smoothing condenser (6SVP50M: SANYO product) 50 μf, rated voltage = 6.3V, ESR = 35 mω, maximum allowable ripple current = 2.35 Arms. The output ripple voltage (% of output voltage), output smoothing condenser, ripple current and series resistance are assumed to be ΔVO, CL ICLrms and ESR. Series resistance ESR ΔVo ΔIL 2πfCL π mω Series resistance of above condenser is 35 mω and acceptable. Condenser CL ΔIL 2πf (ΔVo ΔIL ESR) π ( ) 0.7 μf Capacitance of the above condenser is 50 μf (Typ) and acceptable. Ripple current ICLrms (VIN (Max) Vo) ton 2 3L (5 3.3) marms Ripple current of the above condenser is 2.35 Arms and acceptable. 7

19 CH2 : 5 V output VIN (Max) = 5 V, Io = 3 A, fosc = 300 khz. N-ch MOS FET (IRF790D (IR product)) Main side VDS = 30 V, VGS = ± 20 V, ID = 6.2 A, RDS (on) = 38 mω (Max), Qg = 0.5 nc (Max) Synchronous rectifier side VDS = 30 V, VGS = ± 20 V, ID = 6.2 A, RDS (on) = 32 mω (Max), Qg = 8.3 nc (Max) Diode VF (forward voltage) = 0.52 V (Max) at IF = A. Drain current : peak value The peak drain current of this FET must be within its rated current. If the FET s peak drain current is ID, it is obtained by the following formula. Main side VIN (Max) Vo ID IO + ton 2L A Synchronous rectifier side Vo ID IO + toff 2L ( 0.33) 3.25 A 8

20 2. Inductor (SLF2565T-220M3R5: TDK product) 22 μh (tolerance ± 20%), rated current = 3.5 A. L value at full load current condition: Peak-to-peak value of ripple current should be set under half load-current. L 2 (VIN (Max) Vo) ton IO 2 (5 5) μh The load current satisfying the continuous current condition is obtained by the following formula. IO Vo toff 2L ( 0.33) 254 ma Ripplle current : peak value The peak ripple current must be within the rated current of the inductor. If the peak ripple current is IL, it is obtained by the following formula. IL IO + VIN (Max) Vo ton 2L A Ripple current : peak-to-peak value If the peak-to-peak ripple current is ΔIL, it is obtained by the following formula. ΔIL = VIN (Max) Vo ton L = := 0.5 A 9

21 3. Output smoothing condenser (6SVP50M: SANYO product) 50 μf, rated voltage = 6.3V, ESR = 35 mω, maximum allowable ripple current = 2.35 Arms The output ripple current (% of output voltage), output smoothing condenser, ripple current and series regsistance are assumed to be ΔVO, CL, ICLrms and ESR. Series resistance ESR ΔVo ΔIL 2πfCL π mω Series resistance of above condenser is 35 mω and acceptable. Condenser CL ΔIL 2πf (ΔVo ΔIL ESR) 0.5 2π ( ) 8.2 μf Capacitance of the above condenser is 50 μf (Typ) and acceptable. Ripple current ICLrms (VIN (Max) Vo) ton 2 3L (5 5) marms Ripple current of the above condenser is 2.35 Arms and acceptable. 20

22 ORDERING INFORMATION EV board part No. EVboard version No. Remarks MB39A06EVB MB39A06EV Board Rev

23 MEMO 22

24 MEMO 23

25 FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo , Japan Tel: Fax: For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 250 E. Arques Avenue, M/S 333 Sunnyvale, CA , U.S.A. Tel: Fax: Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, Langen, Germany Tel: Fax: Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 KOSMO TOWER, 002 Daechi-Dong, Kangnam-Gu,Seoul Korea Tel: Fax: Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 5 Lorong Chuan, #05-08 New Tech Park, Singapore Tel: Fax: FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. Rm.302, Bund Center, No.222 Yan An Road(E), Shanghai , China Tel: Fax: FUJITSU MICROELECTRONICS PACIFIC ASIA LTD. 0/F., World Commerce Centre, Canton Road Tsimshatsui, Kowloon Hong Kong Tel: Fax: All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated () for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. Edited Strategic Business Development Dept.