Fujitsu ASSP Product. Power Management 1/24. Evaluation board Manual MB39A112. Rev 1.0E April,2003. MB39A112 Evaluation Board Rev1.

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1 /24 Evaluation board Manual MB39A2 Rev.0E April,2003

2 . Evaluation Board Specifications 2/24 The MB39A2 evaluation board is a surface mounting circuit board of the down conversion circuit of 3ch..2V, 3.3V, and 5V are output from the output terminal in three forms, and the current of.5a or less is supplied. Moreover, FET is turned off when the under voltage lockout protection circuit do operation or the short-circuit protection is detected by the protection function, and the output is stopped. In addition, the on/off control and the soft-start of each channel can be set. 2. Evaluation Board Specifications Item Input voltage Oscillation frequency Output voltage Ripple voltage Output current Soft-start time Short-circuit detection time Terminal MIN TYP MAX Unit VIN V khz CH VO V CH2 VO V CH3 VO V CH VO mv CH2 VO mv CH3 VO mv CH VO ma CH2 VO ma CH3 VO ma CH ms CH ms CH ms µs

3 3/24 3. Pin Descriptions PIN name VIN VoX GND GNDX ICGND Input terminal DC/DC converter output terminal GND terminal MB39A2 GND terminal DESCRIPTIONS DC/DC converter GND terminal 4. Sw Information SW Name Function OPEN L CS CHcontrol Output ON Output OFF 2 CS2 CH2 control Output ON Output OFF 3 CS3 CH3 control Output ON Output OFF 5. Setup & Confirmation Method () Setup Connect the power-supply terminal side to VIN and GND. Connect the Vo side to the required loading device or measuring instrument. Set SW through SW4 (CS to CS3) to OFF (output off). (2) Checkup Turn on VIN (power supply), set SW to SW3 to ON (output on). The IC works normally with the following outputs: Vo =.2 V (Typ), Vo2 = 3.3 V (Typ), Vo3 = 5 V (Typ)

4 6. Parts Layout Block 4/24 Board parts block diagram

5 5/24 Board Layout Top Side Inside GND(Layer 2) Inside VIN(Layer 3) Bottom Side

6 7. Circuit Diagram 6/24 VIN (2V) GND CTL CTL2 B CH2 ON/OFF signal (L:ON,H:OFF) CTL3 A R9 * CH ON/OFF signal (L:ON,H:OFF) R20 * C R2 * R6 2.2kΩ Q4 * R 4.7kΩ Q5 * R5 680Ω Q6 * CH3 ON/OFF signal (L:ON,H:OFF) a b c R7 8kΩ R8 00kΩ C7 0.uF C uF R2 56kΩ R3 36kΩ C2 0.uF C 0.0uF R6 30kΩ R7 0kΩ C3 0.uF C4 0.0uF Charge current µa C5 000pF -INE 2 CS R9 820Ω FB 3 -INE2 9 CS2 0 R4 820Ω FB2 8 -INE3 2 CS3 R8 kω FB3 3 CSCP 4 0µA 0µA VREF L priority 0µA VREF L priority VREF L priority 2.5V 2.0V SCP Comp. SCP OSC.0V.23V.23V H priority Error Amp Error Amp2 Error Amp3 2.7V H: at SCP H:UVLO release UVLO GND bias 3.5V PWM Comp. PWM Comp.2 PWM Comp.3 Io=50mA Io=50mA Io=50mA <<CH>> Pch Drive <<CH2>> Pch Drive2 <<CH3>> Pch Drive3 VCCO-5V Bias Voltage VH ErrorAmp power supply SCPComp. power supply ErrorAmp reference.0v/.23v VREF VR Power ON/OFF CTL VCCO R4 20 C7 0.uF 0Ω OUT 9 OUT2 8 OUT3 7 VH 6 GNDO 5 VCC 4 C9 0.uF R5 0Ω R 0Ω R2 0Ω R3 0Ω C6 0.uF A B VD3 C Q3 MCH3308 L3 0uH OPEN VD Q MCH332 C 2.2uF VD2 Q2 MCH332 C3 2.2uF C5 2.2uF CS CS2 CS3 NC L 2uH D SBE00 L2 3.3uH D2 SBE00 D3 SBS005 SW Step down Vo (.2V) Io=0.8A to.5a C2 4.7uF GND Vo2 (3.3V) Io2=0.5A to A C4 4.7uF Vo3 (5.0V) Io=0.5A to 0.3A C6 4.7uF Step down L GND2 Step down GND3 a b c 5 RT R0 5.kΩ 6 CT C0 00pF *:Not mounting 7 GND ICGND All channels are ON state in above diagram. << 20Pin >>

7 8. Circuit Parts List 7/24 Component Specification No. Item Part name (Circuit diagram mark) Rated Rated2 Rated3 Value Deviation Characteristic Package Vendor Remark M IC MB39A2PFT FPT-20P-M06 FUJITSU 2 Q Pch FET MCH332 PD=W VGSS=20V ID=2.0A MCPH3 SANYO 3 Q2 Pch FET MCH332 PD=W VGSS=20V ID=2.0A MCPH3 SANYO 4 Q3 Pch FET MCH3308 PD=0.8W VGSS=20V ID=.0A MCPH3 SANYO 5 Q4 Nch FET Not mounting 6 Q5 Nch FET Not mounting 7 Q6 Nch FET Not mounting 8 D SBD SBE00 IF(AV)=2A VRRM=30V CPH6 SANYO 9 D2 SBD SBE00 IF(AV)=2A VRRM=30V CPH6 SANYO 0 D3 SBD SBS005 IF(AV)=A VRRM=30V CPH3 SANYO L Inductor A96CY-2R0M IDC=3A IDC2=3.3A - 2u ±20% RDC=6mΩ - TOKO 2 L2 Inductor A96CY-3R3M IDC=2.57A IDC2=2.8A - 3.3u ±20% RDC=2.4mΩ - TOKO 3 L3 Inductor A96CY-00M IDC=.49A IDC2=.97A - 0u ±20% RDC=4.2mΩ - TOKO 4 C Ceramic condenser C326JBE225K 25V u ±0% B characteristic 326 TDK 5 C2 Ceramic condenser C326JBA475M 0V u ±20% B characteristic 326 TDK 6 C3 Ceramic condenser C326JBE225K 25V u ±0% B characteristic 326 TDK 7 C4 Ceramic condenser C326JBA475M 0V u ±20% B characteristic 326 TDK 8 C5 Ceramic condenser C326JBE225K 25V u ±0% B characteristic 326 TDK 9 C6 Ceramic condenser C326JBA475M 0V u ±20% B characteristic 326 TDK 20 C7 Ceramic condenser C608JBH04K 50V u ±0% B characteristic 608 TDK 2 C8 Ceramic condenser C608JBH223K 50V u ±0% B characteristic 608 TDK 22 C9 Ceramic condenser C608JBH04K 50V u ±0% B characteristic 608 TDK 23 C0 Ceramic condenser C608CHH0J 50V p ±5% CH characteristic 608 TDK 24 C Ceramic condenser C608JBH03K 50V u ±0% B characteristic 608 TDK 25 C2 Ceramic condenser C608JBH04K 50V u ±0% B characteristic 608 TDK 26 C3 Ceramic condenser C608JBH04K 50V u ±0% B characteristic 608 TDK 27 C4 Ceramic condenser C608JBH03K 50V u ±0% B characteristic 608 TDK 28 C5 Ceramic condenser C608JBH02K 50V p ±0% B characteristic 608 TDK 29 C6 Ceramic condenser C608JBH04K 50V u ±0% B characteristic 608 TDK 30 C7 Ceramic condenser C608JBH04K 50V u ±0% B characteristic 608 TDK (Continued)

8 8/24 (Continued) Component Specification No. Item Part nmae (Circuit diagram mark) Rated Rated2 Rated3 Value Deviation Characteristic Package Vendor Remark 3 R Jumper RK73ZJ A Ω max 50mΩ KOA 32 R2 Jumper RK73ZJ A Ω max 50mΩ KOA 33 R3 Jumper RK73ZJ A Ω max 50mΩ KOA 34 R4 Jumper RK73ZJ A Ω max 50mΩ KOA 35 R5 Jumper RK73ZJ A Ω max 50mΩ KOA 36 R6 Resistor PR086P-222-D /6W kΩ ±0.5% ±25ppm/ C 608 ssm 37 R7 Resistor PR086P-83-D /6W - - 8kΩ ±0.5% ±25ppm/ C 608 ssm 38 R8 Resistor PR086P-04-D /6W kΩ ±0.5% ±25ppm/ C 608 ssm 39 R9 Resistor PR086P-82-D /6W Ω ±0.5% ±25ppm/ C 608 ssm 40 R0 Resistor PR086P-52-D /6W kΩ ±0.5% ±25ppm/ C 608 ssm 4 R Resistor PR086P-472-D /6W kΩ ±0.5% ±25ppm/ C 608 ssm 42 R2 Resistor PR086P-563-D /6W kΩ ±0.5% ±25ppm/ C 608 ssm 43 R3 Resistor PR086P-363-D /6W kΩ ±0.5% ±25ppm/ C 608 ssm 44 R4 Resistor PR086P-82-D /6W Ω ±0.5% ±25ppm/ C 608 ssm 45 R5 Resistor PR086P-68-D /6W Ω ±0.5% ±25ppm/ C 608 ssm 46 R6 Resistor PR086P-303-D /6W kΩ ±0.5% ±25ppm/ C 608 ssm 47 R7 Resistor PR086P-03-D /6W - - 0kΩ ±0.5% ±25ppm/ C 608 ssm 48 R8 Resistor PR086P-02-D /6W - - kω ±0.5% ±25ppm/ C 608 ssm 49 R9 Resistor Not mounting 50 R20 Resistor Not mounting 5 R2 Resistor Not mounting 52 SW DIP SWITCH DMS-4H MATSUKYU 53 PIN Wiring terminal WT Mac-Eight

9 9. Initialization () Output voltage CH: Vo(V) = R6+R7+R8 R8.0.2V CH2: Vo2(V) = R+R2+R3 R V CH3: Vo3(V) = R5+R6+R7 R7.23 5V 9/24 (2) Triangular wave oscillation frequency fosc(khz) = C0(pF) R0(kΩ) 2350(kHz) (3) Soft-Start Time CH: ts(s) = 0. C7(µF) 0(ms) CH2: ts2(s) = 0.23 C2(µF) 2(ms) CH3: ts3(s) = 0.23 C3(µF) 2(ms) (4) Short-Circuit Detection Time tscp(s) = 0.72 C5(µF) 720(µs)

10 0. Reference Data ()Conversion efficiency 0/24 ch ch2 Conversion efficiency-load current (ch) Conversion efficiency-load current (ch2) Conversion efficiencyη(%) VIN=2V Setting Vo=.2V SW=ON SW2=OFF SW3=OFF Conversion efficiencyη(%) VIN=2V Setting Vo2=3.3V SW=OFF SW2=ON SW3=OFF Load current Io(mA) Load current Io2(mA) ch3 00 Conversion efficiency-load current (ch3) 90 Conversion efficiencyη(%) VIN=2V Setting Vo3=5.0V SW=OFF SW2=OFF SW3=ON Load current Io3(mA)

11 /24 (2) Load regulation (VIN IN=2V) =2V) ch ch2 Output voltgae-load current(ch2) Output voltgae-load current(ch3) Output voltgae Vo2(V) VIN=2V Setting Vo2=3.3V SW=OFF SW2=ON SW3=OFF Output voltgae Vo3(V) VIN=2V Setting Vo3=5.0V SW=OFF SW2=OFF SW3=ON Load current Io2(A) Load current Io3(A) ch3 Output voltgae-load current(ch3) 5.3 Output voltgae Vo3(V) VIN=2V Setting Vo3=5.0V SW=OFF SW2=OFF SW3=ON Load current Io3(A)

12 2/24 (3) Line regulation ch ch2 Output voltage-input voltage(ch) Output voltage-input voltage(ch2) Output voltage Vo(V).3.2 Output voltage Vo2(V) Input voltage VIN(V) Input voltage VIN(V) ch3 Output voltage-input voltage(ch3) Output voltage Vo3(V) Input voltage VIN(V)

13 3/24 (4) Soft-start operation waveform ch ch2 2.0 Vo[V] CS[V] ms 3 CS2[V] 2 VIN=2V Setting Vo=.2V (ms) 4 Vo2[V] ms VIN=2V Setting Vo2=3.3V (ms) ch3 Vo3[V] CS3[V] ms VIN=2V Setting Vo3=5.0V (ms)

14 . Parts Select Method 4/24 FET Flyback Diode CH Inductor Output Smoothing Condenser FET CH2 Inductor Output Smoothing Condenser Flyback Diode FET Flyback Diode Board Photograph Inductor CH3 Output Smoothing Condenser

15 5/24 The parts selection method is written in the following. CH.2V output Vin=2V(typ),Vo=.2V,Io=.5A,fosc=2350kHz. P-ch MOS FET(MCH332(SANYO) ) VDS=-30V, VGS=±20V, ID=-2A, RDS(on)=205mΩ(typ), Qg=5.5nC(typ) Drain current : Peak value The peak value of the drain current of FET should be in the rated current value of FET. When the peak value of the drain current of FET is assumed to be ID, ID is obtained by the following formula. ID Io+.5+ Vin - Vo ton 2L A

16 6/24 2. Inductor(A96CY-2R0M : TOKO) 2µH(tolerance : ±20%), rated current= 3.0A L value in the full-load current condition:it is set that the peak to peak value of the ripple current becomes /2 or less of load currents. L 0.6µH 2(Vin - Vo) Io 2 (2-.2).5 ton Load current value which becomes continuous current condition. Io Vo toff 2L (-0.) 0.A Ripple current : peak value The peak value of the ripple current should be in the rated current value of the inductor. When the peak value of the ripple current is assumed to be IL, IL is obtained by the following formula. IL Io+ Vin-Vo 2L ton A Ripple current : peak to peak value When the peak to peak value of the ripple current is assumed to be IL, IL is obtained by the following formula. IL = Vin-Vo ton L = A

17 3. Flyback Diode (SBE00: SANYO) VR=30V, IO =2.0A, IFSM =20A, VF=0.55V, at IF=2.0A 7/24 VR should be a value which satisfies the input voltage enough. 30V Diode average current IDi is obtained by the following formula. Vo IDi Io (- ) =.5 ( - 0.).35A Vin Diode peak current IDip is obtained by the following formula. Vo IDip (Io+ 2L toff).6a

18 CH2 3.3V output Vin=2V(typ),Vo2=3.3V,Io=.0A,fosc=2350kHz. P-ch MOS FET(MCH332(SANYO) ) VDS=-30V, VGS=±20V, ID=-2A, RDS(on)=205mΩ(typ), Qg=5.5nC(typ) Drain current : Peak value 8/24 The peak value of the drain current of FET should be in the rated current value of FET. When the peak value of the drain current of FET is assumed to be ID, ID is obtained by the following formula. ID Io+.0+ Vin - Vo2 ton 2L A

19 9/24 2. Inductor(A96CY-3R3M : TOKO) 3.3µH(tolerance : ±20%), rated current= 2.57A L value in the full-load current condition:it is set that the peak to peak value of the ripple current becomes /2 or less of load currents. L 2.04µH 2(Vin - Vo2) Io 2 (2-3.3).0 ton Load current value which becomes continuous current condition. Io Vo2 toff 2L (-0.275) 0.5A Ripple current : peak value The peak value of the ripple current should be in the rated current value of the inductor. When the peak value of the ripple current is assumed to be IL, IL is obtained by the following formula. Vin - Vo2 IL Io+ ton 2L A Ripple current : peak to peak value When the peak to peak value of the ripple current is assumed to be IL, IL is obtained by the following formula. IL = Vin - Vo2 ton L = A

20 3. Flyback Diode (SBE00: SANYO) VR=30V, IO =2.0A, IFSM =20A, VF=0.55V, at IF=2.0A 20/24 VR should be a value which satisfies the input voltage enough. 30V Diode average current IDi is obtained by the following formula. Vo2 IDi Io (- ) =.0 ( ) 0.725A Vin Diode peak current IDip is obtained by the following formula. Vo2 IDip (Io+ 2L toff).5a

21 CH3 5V output Vin=2V(typ),Vo3=5V,Io=0.3A,fosc=2350kHz. P-ch MOS FET(MCH332(SANYO) ) VDS=-30V, VGS=±20V, ID=-A, RDS(on)=720mΩ(typ), Qg=2.6nC(typ) Drain current : Peak value 2/24 The peak value of the drain current of FET should be in the rated current value of FET. When the peak value of the drain current of FET is assumed to be ID, ID is obtained by the following formula. ID Io Vin - Vo3 ton 2L A

22 22/24 2. Inductor(A96CY-00M : TOKO) 0µH(tolerance : ±20%), rated current=.49a L value in the full-load current condition:it is set that the peak to peak value of the ripple current becomes /2 or less of load currents. L 8.28µH 2(Vin - Vo3) Io 2 (2-5) 0.3 ton Load current value which becomes continuous current condition. Io Vo3 toff 2L (-0.47) 62.0mA Ripple current : peak value The peak value of the ripple current should be in the rated current value of the inductor. When the peak value of the ripple current is assumed to be IL, IL is obtained by the following formula. Vin - Vo3 IL Io+ ton 2L A Ripple current : peak to peak value When the peak to peak value of the ripple current is assumed to be IL, IL is obtained by the following formula. IL = Vin - Vo3 ton L = A

23 23/24 3. Flyback Diode (SBS005: SANYO) VR=30V, IO =.0A, IFSM =0A, VF=0.35V, at IF=0.5A VR should be a value which satisfies the input voltage enough 30V Diode average current IDi is obtained by the following formula. Vo3 IDi Io (- ) = 0.3 ( 0.47 ) 0.75A Vin Diode peak current IDip is obtained by the following formula. Vo IDip (Io+ 2L toff) 0.36A

24 2. Ordering Information 24/24 EV board part No. MB39A2EVB-0 EV board version No. MB39A2EV Board Rev.0 Note All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.