NJM2670 DUAL H BRIDGE DRIVER PIN CONNECTION

Transcription

1 DUAL H BRIDGE DRIVER GENERAL DESCRIPTION The is a general-purpose 60V dual H-bridge drive IC. It consists of a pair of H-bridges, a thermal shut down circuit and its alarm output. The alarm output can detect application problems and the system reliability will be significantly improved if monitored by Micro Processor. Therefore, it is suitable for two-phase stepper motor application driven by microprocessor. PACKAGE OUTLINE FEATURES Wide Voltage Range Wide Range of Current Control Thermal overload Protection Dead Band Protector Package Outline 4V to 60V 5 to 500mA DIP22, SOP24-E3 (Batwing) D2 ( DIP22 ) E3 ( SOP24-E3 Batwing ) PIN CONNECTION INA INB VCC TSD_ARM INA INB VCC TSD ARM DIP-22 SOP24-E3 - - Ver2.0

2 BLOCK DIAGRAM INA Thermal Shut Down TSD_ARM INB - 2 -

3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C ) PARAMETER SYMBOL RATINGS UNIT Maximum Supply Voltage V MM 60 V Logic Supply Voltage 7 V Input Voltage Range V IN -0.3 to 7 V Output Current I OUT.5 A Power dissipation at T =+25 C,DIP and SOP package P D25 5 W Power dissipation at T =+25 C,DIP package P D W Power dissipation at T =+25 C,SOP package P D25 2 W Operating Junction Temperature Topr C Storage Temperature Tstg C RECOMENNDO OPERATING CONDITIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Supply Voltage V MM 4-55 V Logic Voltage Range V Maximum Output Current I OUT A Operating junction temperature Tj C THERMAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j- DIP22 package. - - C/W Rth j-a DIP22 package. Note C/W Rth j- SOP24 package C/W Rth j-a SOP24 package. Note C/W Note : All ground pins soldered onto a 20 cm 2 PCB copper area with free air convection, T A =+25 C - 3 -

4 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT GENERAL Quiescent current Icc Enable=H,IN=IN3=L,IN ma 2=IN4=H Thermal shutdown Ttsd C Off-State leak current Itsd- LEAK TSD ARM=5V µa Thermal alarm output saturation Vtsd Io=5mA V Dead time protection Td - - µs LOGIC Input LOW voltage Vi L - - V Input HIGH voltage Vi H V Input HIGH current Ii H Vi=2.4V µa Input LOW current Ii L Vi=0.4V ma OUTPUT Upper transistor saturation V OU Io=000mA V V OU2 Io=300mA V V OL Io=000mA V Lower transistor saturation V OL2 Io=300mA -.3 V Upper diode forward V fu Io=000mA V V fu2 Io=300mA V Lower diode forward V fl Io=000mA V V fl2 Io=300mA V Output leakage current Lo- LEAK V MM =50V - - ma Upper diode recoverly time Trr U ns Lower diode recoverly time Trr L ns TRUTH TABLE INPUT (L=Low,H=High,X=Don't care) =H =H =L =L OUTPUT (H=Source,L=Sink) INA OUTPUT mode INB L L L L short break mode L H L H CW H L H L CCW H H H H short break mode X X All Transistor turned OFF - 4 -

5 TYPICAL APPLICATION ). Bipolar Stepper Motor V MM (4 55V) INA Motor CPU or Microprocessor TSD TSD ARM INB (V MM ) 2). Single Phase DC Motor V MM (4 55V) INA Motor CPU or Microprocessor INB TSD TSD ARM Motor (V MM ) - 5 -

6 3) Current Control Application for Bipolar Stepper Motor V MM (4 55V) INA Motor CPU or Microprocessor TSD TSD ARM INB Current Control TIMING CHART INA(B) (B2) (B) (B) (B2) tpd tpd tpd:in_hl propagation delay tpd2 tpd2:in_lh propagation delay td :Output dead band protection delay te :ENABLE_HL propagation delay te2 :ENABLE_LH propagation delay th :Output High impedance section tpd2 td td te Reference value unit tpd.0 us tpd2 2.5 us td.5 us te 3.5 us te2 2.0 us th te2-6 -

7 TYPICAL APPLICATION ICC vs. VCC VIN(INA)-hysteresis vs. Temperature Io=500mA EN=EN2=H RL=Noting EN=EN2=H =L INB==L ICC [ma] 00 VIN(INA)-hysteresis [V] VCC [V] VIN(INA) vs. Temperature VIN(INA)-IB vs. Temperature RL=Nothing EN=EN2=H =L INB==L RL=Nothing EN=EN2=H =L INB==L VIN(INA) [V] INA=L to H VIN(INA)-IB [V] INA=0.4V.4 INA=H to L 0 INA=2.4V Vsat(D) vs. Io Vsat(U) vs. Io (Lot-No.U2009T,DIP6) 2.8 (Lot-No.U2009T,DIP6) 2.6 Vsat(D) [V].5 Vsat(U) [V] Io [A] Io [A] - 7 -

8 TYPICAL APPLICATION 2 Diode(D) vs. Io.8.6 (Lot-No.U2009T,DIP6).8.6 Diode(U) vs. Io Diode(D) [V].4 Diode(U) [V] Io [A] ICC vs. Temperature Io [A] ICC vs. Temperature RL=Nothing IN=IN2=H IN3=IN4=L EN=H RL=Nothing ICC [ma] ICC [ma] 50 IN=IN2=H IN3=IN4=H EN=H EN=L IN=IN2=L IN3=IN4=L EN=H Vsat(D) vs. Temperature (Lot-No.U2009T,DIP6) Io=.0A.4.35 Vsat(U) vs. Temperature (Lot-No.U2009T,DIP6) Io=.0A Vsat(D) [V] Vsat(U) [V]

9 TYPICAL APPLICATION Vsat(D) vs. Temperature (Lot-No.U2009T,DIP6) Io=.3A.8.7 Vsat(U) vs. Temperature (Lot-No.U2009T,DIP6) Io=.3A Vsat(D) [V] Vsat(U) [V] Diode(D) vs. Temperature Diode(U) vs. Temperature.6 (Lot-No.U2009T,DIP6).6 (Lot-No.U2009T,DIP6).5.5 Diode(D) [V].4.3 I=.3A I=.0A Diode(U) [V].4.3 I=.3A I=.0A Diode(U) vs. Temperature (Lot-No.U2009T,DIP6). I=0.5A Diode(U) [V] [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights