PART OBSOLETE - USE PI3PCIE3412A
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- Dominick Powell
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1 PART OBSOLETE - USE A.V, PCI Express.0 -Lane, : Mux/DeMux Switch, with Single Enable Features Differential Channel, : Mux/DeMux PCI Express.0 Performance, 8.0Gbps Bi-directional Operation Low Bit-to-Bit Skew, 0ps max Low channel-to-channel skew, 0ps max Low Crosstalk: -db@ GHz High Off Isolation: -db@ GHz (8.0Gbps) Low insertion loss: -.db@ GHz (8.0Gbps) Return loss: -db@ GHz Support for DP. - HBR, HBR, RBR Supply Voltage.V Industrial Temperature Range: -0 o C to 8 o C Packaging (Pb-free & Green): -contact, TQFN (ZH),. x 9mm 0-contact, TQFN (ZL0), x mm Pin Configuration - 0- Contact TQFN A0 A0- A A- SEL A A- A A Description The is an 8 to differential channel multiplexer/ demultiplexer switch. This solution can switch full PCI Express.0, lanes to one of two locations. Using a unique design technique, Diodes has been able to minimize the impedance of the switch such that the attenuation observed through the switch is minimal. The unique design technique also offers a layout targeted for PCI Express signals, which minimizes the channel to channel skew as well as channel to channel crosstalk as required by the PCI Express specification. can also be used for application up to Gbps Application Routing of PCI Express.0, DP., USB.0, SAS.0, SATA.0, XAUI, RXAUI signals with low signal attenuation. Pin Configuration - - Contact TQFN B0 B0- B B- C0 C0- C C- B B- B B- C C- C C- A0 A0- A A- SEL A A- A A V D D GN D V D D GN D C- B0 C B0- B B- C0 C0- C C- B B- B B- C C- V D D D GN V D D D GN
2 PART OBSOLETE - USE A Block Diagram A0 A0- A A- A A- A A- SEL Truth Table Function A N to B N A N to C N SEL L H B0 B0- B B- C0 C0- C C- B B- B B- C C- C C-
3 PART OBSOLETE - USE A Pin Description -TQFN Pin # 0-TQFN Pin Name Description A0 A0 A A A A A A B0 B0 B B B B B B C0 C0 C C C C C C 9 SEL I, 8,,8, 0, 0, 0,,, 0,,, 9,, 9,, Center Pad Signal, Channel 0, Port A Signal, Channel, Port A Signal, Channel, Port A Signal, Channel, Port A Signal, Channel 0, Port B Signal, Channel, Port B Signal, Channel, Port B Signal, Channel, Port B Signal, Channel 0, Port C Signal, Channel, Port C Signal, Channel, Port C Signal, Channel, Port C,,,, 8, 8 8,,,, 8,,, 9, 0 Operation mode Select (when SEL=0: A B, when SEL=: A C Pwr.V ±0% Positive Supply Voltage Pwr Power ground
4 PART OBSOLETE - USE A Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) Storage Temperature... C to C Supply Voltage to Ground Potential...0.V to.v Channel DC Input Voltage...0.V to.v DC Output Current...0mA Power Dissipation...0.W SEL DC Input Voltage...0.V to.v Electrical Characteristics Recommended Operating Conditions Switching Characteristics Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Symbol Parameter Conditions Min. Typ. Max. Units.V Power Supply.0.. V I DD Total current from.v supply SEL = 0V or 0. ma V -DIF Differential Voltage (differential pins). V ppd V -CM Common Mode Voltage (differiential pins) V T A Operating temperature range -0 8 o C DC Electrical Characteristics for Switching over Operating Range Parameters Description Test Conditions () Min. Typ. () Max. Units VIH - SEL Input HIGH Voltage, SEL Input. VIL - SEL Input LOW Voltage, SEL Input VIK Clamp Diode Voltage = Max., I IN = 8mA 0.. IIH Input HIGH Current, SEL = Max., V IN = ± IIL Input LOW Current, SEL = Max., V IN = 0V ± IIN - SEL Input Leakage Current, SEL Input V IN = V IH - SEL Max or V IL - SEL Min 0 0 µa IIH Input HIGH Current, A X, B X, C X = Max., V IN =.V 0 0 IIL Input LOW Current, A X, B X, C X = Max., V IN = 0V 0 0 IOZH HighZ HIGH Current, B X, C X = Max., V IN =.V 0 0 µa IOZL HighZ LOW Current, B X, C X = Max., V IN = 0V 0 0 µa C-ON ON state capacitance. pf RON ON state resistance =.V, IO = 8mA, V IN = 0.8V Ω Note:. Typical values are at =.V, T A = C ambient and maximum loading. Parameters Description Test Conditions Min. Typ. Max. Units tpzh, tpzl Line Enable Time - SEL to AN, BN, CN 0 tphz, tplz Line Disable Time - SEL to AN, BN, CN 0. tb-b Bit-to-bit skew within the same differential pair 0 ps tch-ch Channel-to-channel skew 0 ps V µa µa ns
5 PART OBSOLETE - USE A Dynamic Electrical Characteristics Parameter Description Test Conditions Min. Typ. () Max. Units DDIL Differential Insertion Loss (V IN = -0dBm, DC = 0V) f= MHz -.GHz f=.ghz -.GHz f=.ghz - GHz f=ghz f= MHz -.GHz DDIL OFF Differential Off Isolation f=.ghz -.GHz f=.ghz - GHz -. - db f=ghz - -0 f= MHz -.GHz -0 - DDRL Differential Return Loss f=.ghz -.GHz f=.ghz - GHz db f=ghz f= MHz -.GHz DDNEXT Near End Crosstalk f=.ghz -.GHz f=.ghz - GHz db f=ghz -. - Insertion loss.db, V IN =0.Vpp, DC=0V.0 V I F Max Signal Frequency Range Insertion loss.db, V IN =0.Vpp, DC=0.9V.0 Insertion loss db, V IN =0.Vpp, DC=0V 8.0 GHz Insertion loss db, V IN =0.Vpp, DC=0.9V 8.0 BW -db Bandwidth 8. GHz Notes:. Guaranteed by design. Typical values are at =.V, T a = C ambient and maximum loading. BALANCED PORT BALANCED PORT DUT BALANCED PORT DUT BALANCED PORT DUT BALANCED PORT BALANCED PORT db Diff. Insertion Loss and Return Test Circuit Diff. Off Isolation Test Circuit Diff. Near End Xtalk Test Circuit
6 PART OBSOLETE - USE A Differential Insertion Loss Differential Return Loss
7 PART OBSOLETE - USE A Differential Off Isolation Differential Crosstalk
8 PART OBSOLETE - USE A.0 Gbps RX signal eye without.0 Gbps RX signal eye with 8.0 Gbps RX signal eye without 8.0 Gbps RX signal eye with 8
9 PART OBSOLETE - USE A Test Circuit for Electrical Characteristics (-) Port Port D.U.T xen Switching Waveforms COM Port xen Output Output pf C L Tsw Tsw 00-ohm Tsw Switch Positions Test Switch t PLZ, t PZL.0V t PHZ, t PZH Prop Delay % % Tsw % % Voltage Waveforms Enable and Disable Times 0V VOH VOL VOH VOL Open Notes:. C L = Load capacitance: includes jig and probe capacitance.. R T = Termination resistance: should be equal to Z OUT of the Pulse Generator. Output is for an output with internal conditions such that the output is low except when disabled by the output control. Output is for an output with internal conditions such that the output is high except when disabled by the output control.. All input impulses are supplied by generators having the following characteristics: PRR MHz, Z O = Ω, t R.ns, t F.ns.. The outputs are measured one at a time with one transition per measurement. 9
10 PART OBSOLETE - USE A DP. Application DP Source DP TX AUX TX AUX RX Vbias_TX (0 -.V) Vbias_TX (0 -.V) SEL_GPIO DP_LANEx DP_LANEx# Same goes for other lanes DP_AUX DP_AUX# DP_HPD V_ and pins should be shorted to PCB power planes via shortest paths. V_ and V_ should be employed at the same time. AUX_P AUX_P DP_AUX AUX_N AUX_N DP_AUX# HEAT U0 A0 A0- A 8 A- 9 0 SEL A A- A A- B0 B0-8 B B- C0 C0- C C- 0 B B- 8 9 B B- C C- C C- V_ U0 IN SA #EN SA SD DA SD SB DD SB SC 8 DB SC 0 DC 9 PIV0 C V_.u_080 C0 u_080 C0 C0 HPD HPD DP_HPD C0 C0 C0 At least pc.uf and pc 0.uF decoupling capacitors are recommended. Each decoupling capacitor should be connected to PCB power plane via shortest path. C C C C C C C C8 C C C C C C8 C9 C0 AUX_N AUX_P C0 C08 C09 C0 C9 C0 AUX_N C AUX_P C u_080 u_080 V_ V_ J0 0 9 LCD_VCC LCD_VCC 8 LCD_VCC H_ LCD_VCC LCD_Self_Test LCD_ LCD_ AUX_CH_N LCD_ AUX_CH_P LCD_ H_ HPD Lane0_P 0 H_ Lane0_N BL_ 8 BL_ Lane_N Lane_P BL_ 0 BL_ H_ BL_ENABLE Lane_N Lane_P BL_PWM_DIM NC H_ Lane_N Lane_P H_ NC BL_PWR BL_PWR BL_PWR 8 BL_PWR 9 NC NC 0 Lane edp Source Receptacle J0 0 9 LCD_VCC LCD_VCC 8 LCD_VCC LCD_VCC LCD_Self_Test LCD_ H_ LCD_ AUX_CH_N LCD_ AUX_CH_P LCD_ H_ HPD Lane0_N Lane0_P BL_ Lane_P H_ BL_ 9 BL_ 0 8 H_ Lane_N Lane_P H_ Lane_N BL_ BL_ENABLE BL_PWM_DIM NC NC Lane_N Lane_P BL_PWR BL_PWR NC H_ BL_PWR 8 BL_PWR 9 NC 0 Lane edp Source Receptacle V_ V_ HPD HPD 0
11 PART OBSOLETE - USE A Packaging Information Notes:. All dimensions are in mm. Angles in degrees.. Coplanarity applies to the exposed pad as well as the terminals.. Refer JEDEC MO-0 DATE: 0// DESCRIPTION: 0-contact, Thin Fine Pitch Quad Flat No-Lead, TQFN PACKAGE CODE: ZL (ZL0) DOCUMENT CONTROL #: PD- REVISION: --
12 PART OBSOLETE - USE A Packaging Information Ordering Information Note: For latest package info, please check: Ordering Code Package Code Package Description ZLE ZL 0-contact, Thin Fine Pitch Quad Flat No-Lead (TQFN) ZLEX ZL 0-contact, Thin Fine Pitch Quad Flat No-Lead (TQFN), Tape & Reel ZHE ZH -contact, Very Thin Quad Flat No-Lead (TQFN) ZHEX ZH -contact, Very Thin Quad Flat No-Lead (TQFN), Tape & Reel Notes: Thermal characteristics can be found on the company web site at "E" denotes Pb-free and Green Adding an "X" at the end of the ordering code denotes tape and reel packaging
13 PART OBSOLETE - USE A IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. does not assume any liability arising out of the application or use of this document or any product described herein; neither does convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold and all the companies whose products are represented on website, harmless against all damages. does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by. LIFE SUPPORT products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by. Further, Customers must fully indemnify and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 0,
Description. Applications. Truth Table
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A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
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140Mb/s Bi-directional Level Tralator for Push-Pull Applicatio Features Description Applicatio Pin Configuration UDFN1.2*1.6-8L(Top View) Pin Description Pin No. Pin Name Type 1 V CC(A) Power 2 A1 I/O
More informationPI90LV01/PI90LVB01. Features ÎMeets Î or Exceeds ANSI TIA/EIA Standard ÎSignaling Î rates up to 660 Mbps
SOTiny LVDS High-Speed Differential Line Driver Features ÎMeets Î or Exceeds ANSI TIA/EIA-644-1955 Standard ÎSignaling Î rates up to 660 Mbps ÎBus-Terminal Î ESD exceeds 2kV ÎLow-Voltage Î Differential
More informationApplications AP7350 GND
150mA ULTRA-LOW QUIESCENT CURRENT LDO with ENABLE Description The is a low dropout regulator with high output voltage accuracy. The includes a voltage reference, error amplifier, current limit circuit
More informationAZV358. Pin Assignments. Description DATA SHEET. Applications. Features. Functional Block Diagram. A Product Line of. Diodes Incorporated
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS Description Pin Assignments The is dual low voltage (2.7V to 5.5V) operational amplifiers which have rail-to-rail output swing capability. The
More informationFeatures. Description PI6ULS5V9515A
I2C Bus/SMBus Repeater Features 2 channel, bidirectional buffer I 2 C-bus and SMBus compatible Operating supply voltage range of 2.3 V to 3.6 V Active HIGH repeater enable input Open-drain input/outputs
More informationGreen. Case Material: Molded Plastic. UL Flammability Classification 3.3V - 200V Nominal Zener Voltage Range
Green 3.W SURFACE MOUNT POWER ENER DIODE Features Mechanical Data 3.W Power Dissipation Case: SMB Ideally Suited for Automated Assembly Case Material: Molded Plastic. UL Flammability Classification 3.3V
More informationPI3PCIE2612-B High Bandwidth, 6-Differential Channel 1:2 DP/PCIe Gen2 Display Mux, BTX Pinout
Features 6 Differential Channel, 1 to 2 demux that will support 5.0Gbps PCIexpress Gen2 signals on one path, and DP 1.1 signals on the second path Insertion Loss for high speed channels @ 2.0 Gbps: -2.0dB
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
More informationZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
More informationV-DFN Pin1. Part Number Case Packaging DML1005LDS-7 V-DFN ,000/Tape & Reel
SINGLE CHANNEL SMART LOAD SWITCH Description and Applications The is a single channel load switch with very low onresistance in a small package. It contains an N-channel MOSFET for up to V BIAS-1.5V input
More informationGreen T-DFN Part Number Compliance Case Packaging LBS10-13 Commercial T-DFN ,000/Tape & Reel
Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
More information74LVC2G00. Pin Assignments. Description NEW PRODUCT. Features. Applications DUAL 2-INPUT NAND GATE 74LVC2G00. (Top View) VCC GND
DUAL 2-INPUT NAND GATE Description Pin Assignments The is a dual, two input NAND gate. Both gates have push-pull outputs designed for operation over a power supply range of 1.65 to 5.5. The device is fully
More informationFeatures. Description. Pin Configuration PT7M CL/CH/NL. Low Power Voltage Detector
Low Power Voltage Detector Features Highly accurate: 1.5% (25 C) Low power consumption: 1μA @ 3.6V Vcc Detect voltage range: 1.8 to 5V in 100mV increments Operating voltage range: 1.2V ~ 5.5V Operating
More informationZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A
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4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
More informationZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
More informationFeatures. Drain SOT23 D. Gate. Source. Part Number Case Packaging DMG3414UQ-7 SOT23 3,000/Tape & Reel DMG3414UQ-13 SOT23 10,000/Tape & Reel
N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V (BR)DSS 2V Description R DS(ON) max 25mΩ @ V GS = 4.5V I D max T A = +25 C 9A 29mΩ @ V GS = 2.5V 5.5A 37mΩ @ V GS = 1.8V 4.8A This MOSFET is
More informationPAM2421/ PAM2422/ PAM2423. Pin Assignments. Description NEW PRODUCT. Applications Features. Typical Applications Circuit
3A, 4.5A, 5.5A PWM STEP-UP DC-DC CONVERTER Description Pin Assignments The PAM242x devices are high-performance, fixed frequency, current-mode PWM step-up DC/DC converters that incorporate internal power
More informationPI3V312. Low On-Resistance, 3.3V High-Bandwidth 4-Port, 2:1 Mux/DeMux VideoSwitch. Features. Description. Block Diagram. Pin Configuration S 1 Y A 4
Features Near-Zero propagation delay 5Ω switches connect inputs to outputs High signal passing bandwidth (500MHz) Beyond Rail-to-Rail switching 5V I/O tolerant with 3.3V supply 1.8V, 2.5V and 3.3V supply
More informationAP4310A. Pin Assignments. Description. Features. Applications. Typical Applications Circuit. A Product Line of. Diodes Incorporated
DUAL OP AMP AND VOLTAGE REFERENCE Description The is a monolithic IC specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies Pin Assignments
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MSB30M-13 Commercial MSBL 2,500/Tape & Reel
Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationBattery-powered Equipment Laptop, Palmtops, Notebook Computers Portable Information Appliances SOT25 (WR Package)
WIDE INPUT VOLTAGE RANGE, 150mA ULDO REGULATOR Description Pin Assignments The series is a positive voltage regulator IC. (Top View) The has features of wide input voltage range, high accuracy, low dropout
More informationPI3DBS V High Speed 2 : 4 Differential Mux/Demux
3.3V High Speed 2 : 4 Differential Mux/Demux Features ÎÎ2:4 Differential Multiplexer/Demultiplexer ÎÎBidirectional Operation ÎÎCan be used in à à Single :4 Configuration à à Dual :2 Configuration à à Fan
More informationGreen. Features G S. Pin Out Top View. Part Number Case Packaging DMNH6021SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
Green 6V 7 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max 23mΩ @ V GS = V 28mΩ @ V GS = 4.V Description and Applications I D max T C = +2 C A 4A This MOSFET is designed to meet
More informationFeatures SOT363. Top View. Part Number Case Packaging DMN2004DWK-7 SOT363 3,000/Tape & Reel
NAB YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) max I D T A = +25 C 2V.55Ω @ V GS = 4.5V 54mA BV DSS Description and Applications This MOSFET is designed to minimize the on-state
More informationB3XXAE B320AE-B345AE. Product Summary. Features and Benefits. Mechanical Data. Description and Applications NEW PRODUCT. Ordering Information (Note 4)
Green 3.0A SCHOTTKY BARRIER RECTIFIER Product Summary B320AE/B330AE/B340AE/B345AE V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 20 3 0.5 0. 30 3 0.5 0.15 40 3 0.5 0.20 45 3 0.5 0.30 Features
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationAL5811. Description. Pin Assignments. Features. Applications. Typical Applications Circuit. (Top View) V CC LED GND R SET 3 U-DFN
6V, LINEAR 75mA ADJUSTABLE CURRENT LED DRIVER Description Pin Assignments The is a Linear LED driver with an adjustable LED current up to 75mA offering excellent temperature stability and output handling
More informationZTL431/ZTL432. Pin Assignments. Description. Features. Applications COST EFFECTIVE ADJUSTABLE PRECISION SHUNT REGULATOR ZTL431/ZTL432
COST EFFECTIVE ADJUSTABLE PRECISION SHUNT REGULATOR Description The ZTL431 and ZTL432 are three terminal adjustable shunt regulators offering excellent temperature stability and output current handling
More informationFeatures. U-DFN (Type F) Pin Out Bottom View
YM 3V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BV DSS 3V R DS(ON) Max 9mΩ @ 25mΩ @ V GS = 2.5V 4mΩ @ V GS =.8V 2mΩ @ V GS =.5V I D Max T C = +25 C 5A 4A A 6A.6mm Profile Ideal for Low
More informationZXCT1009Q. Pin Assignments. Description. Features. Applications. Typical Application Circuit. A Product Line of. Diodes Incorporated
AUTOMOTIVE GRADE MICROPOWER CURRENT MONITOR Description The is a micropower high side current sense monitor. This device eliminates the need to disrupt the ground plane when sensing a load current. Pin
More informationPO3B10A. Truth Table. High Bandwidth Potato Chip. 2-Channel, 2:1 Mux/DeMux Switch w/ Single Enable GND V DD GND SEL
PO3B0A www.potatosemi.com FEATURES: Patented technology High signal -3db passing bandwidth at 3.5Gbps or.75ghz Near-Zero propagation delay CC =.65 to 3.6 Ultra-Low Quiescent Power: 0.µA typical Ideally
More informationFeatures. Top View. Part Number Case Packaging DMN3008SCP10-7 X4-DSN /Tape & Reel
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BV SSS R SS(ON) MAX I S T A = +25 C 30V 7.8mΩ @ V GS =V 14.6A Description This new generation MOSFET has been designed to minimize the on-state resistance
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationTop View. Part Number Case Packaging DMTH4014LPDQ-13 PowerDI (Type C) 2,500/Tape & Reel
4V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 4V R DS(ON) max I D max T C = +25 C 5mΩ @ V GS = V 43.6A 25mΩ @ V GS = 4.5V 33A Description and Applications This MOSFET is designed
More informationAS339/339A. Description. Pin Assignments. Features. Applications LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AS339/339A
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS Description Pin Assignments The consist of four independent precision voltage comparators with a typical offset voltage of 2.0mV and high gain. They are specifically
More informationNOT RECOMMENDED FOR NEW DESIGN USE AP2127N/K/
300mA ADJUSTABLE HIGH PSRR CMOS LINEAR REGULATOR Description Pin Assignments The is a positive, adjustable linear regulator. It features low quiescent current (65µA typ.) and low dropout voltage, making
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
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Features Near-Zero propagation delay 5Ω switches connect inputs to outputs High signal passing bandwidth (400 MHz) Beyond Rail-to-Rail switching 5V I/O tolerant with 3.3V supply 2.5V and 3.3V supply voltage
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ADJUSTABLE PRECISION SHUNT REGULATORS Description Pin Assignments The is a three-terminal adjustable shunt regulator with guaranteed thermal stability over a full operation range. It features sharp turn-on
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1.4MHZ,1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER Description The is a 1.4MHz fixed frequency, current mode, PWM buck (step-down) DC-DC converter, capable of driving a 1.5A load with high efficiency, excellent
More informationFeatures. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DM SO-7 Standard BF ,000/Tape & Reel
2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
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Features General Description LED driving current up to A High efficiency up to 92% Operating input voltage up to 48V High switching frequency up to 500kHz PWM/DC input for dimming control Built-in output
More informationG1 S2. Top View. Part Number Case Packaging DMTH6010LPDQ-13 PowerDI (Type C) 2,500/Tape & Reel
6V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max I D max T C = +25 C mω @ V GS = V 47.6A 6mΩ @ V GS = 4.5V 39.5A Description and Applications This MOSFET is designed
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μp Supervisor Circuits Features Precision supply-voltage monitor - 4.63V (PT7A7511, 7521, 7531) - 4.38V (PT7A7512, 7522, 7532) - 3.08V (PT7A7513, 7523, 7533) - 2.93V (PT7A7514, 7524, 7534) - 2.63V (PT7A7515,
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YYWW Green 3V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Device BV DSS R DS(ON) Max Q 3V 4.3m @ V GS = 8V, I D = 4A Q2 3V 4.3m @ V GS = 8V, I D = 4A Description
More informationPackage Pin Out Configuration. Part Number Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel UMC4NQ-7 Automotive NP ,000
YM DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Ultra-Small Surface Mount Package Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Totally Lead-Free
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
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