The X-Band HPA is two stage 9 ~ 10 GHz GaN MMIC power amplifier has a large signal gain of 15 db with a +45 dbm saturated output power
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1 APA9D Features X-Band W High Amplifier 9 to GHz Frequency Range W Saturated Output db Small Signal 36% Typical Added Efficiency ChipDimensions mm 3 V Supply voltage Description The X-Band HPA is two stage 9 ~ GHz GaN MMIC power amplifier has a large signal gain of db with a + dbm saturated output power This die is manufactured using.2 um gate length GaN on SiC Technology. The MMIC uses gold bonding pads and backside metallization i Electrical Characteristics(Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2 ) Characteristic Symbol Min Typ Max Unit Frequency Range f 9 GHz Input Return Loss S11 9 db Output Return Loss S22 11 db Small Signal S21 db Flatness ΔS db Reverse Isolation S12 db Saturated Output P SAT dbm Added Efficiency % Drain Bias Voltage V D + VDC Gate Bias Voltage V G -2.7 VDC Absolute Maximum Ratings Characteristic Symbol Rating Unit Operating Temp. T A - ~ 8 Storage Temp. T STG - ~ 1 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 1 Rev 1 26-Aug-14
2 APA9D Vd=V, Vg=-2.7V, CW, T A =2 S21 Sij (db) S11 S22 ( devices) 47 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2.. (dbm). 43. (%) , Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 2 Rev 1 26-Aug-14
3 APA9D Vd=V, Vg=-2.7V, Freq.=9GHz, Duty B),, (d Input Vd=2V, Vg=-2.7V, Freq.=9GHz, Duty %@1kHz, (db), Input 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 3 Rev 1 26-Aug-14
4 APA9D Vd=V, Vg=-2.7V, Freq.=9GHz, Duty B),, (d Input Vd=V, Vg=-2.7V, Freq.=GHz, Duty %@1kHz, (db), Input 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 4 Rev 1 26-Aug-14
5 APA9D Vd=2V, Vg=-2.7V, Freq.=GHz, Duty B),, (d Input Vd=V, Vg=-2.7V, Freq.=GHz, Duty %@1kHz, (db), Input 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea Rev 1 26-Aug-14
6 APA9D Vd=V, Vg=-2.7V, Pin=dBm, Duty T A =2 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2 Vd=2V, Vg=-2 2.7V, Pin=dBm, Duty %@1kHz, T A =2 Vd=2V, Vg=-2 2.7V, Pin=dBm, Duty %@1kHz, T A =2 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 6 Rev 1 26-Aug-14
7 APA9D Vd=V, Vg=-2.7V, Pin=dBm, Duty T A =8 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 Vd=2V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 A Vd=2V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 7 Rev 1 26-Aug-14
8 APA9D Vd=V, Vg=-2.7V, Pin=dBm, Duty T A =- Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =- Vd=2V, Vg=-2 2.7V, Pin=dBm, Duty %@1kHz, T A =- Vd=2V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =- Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =- Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =- 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 8 Rev 1 26-Aug-14
9 APA9D Mechanical Information 3. mm Bond Pad Information 28mm 2.8 Pad Type Nominal Voltage Size (um) RF IN/OUT RF N/A VG1L,VG1U DC -2.7 V 7 VD1L,VD1UVD1U DC +. V 1 VD2L,VD2U DC +. V 1 C DC N/A 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 9 Rev 1 26-Aug-14
10 APA9D Assembly and Bonding Diagram Vg Vd 1uF nf 4.7nH 1uF nf pf pf 3pF pf RF IN RF OUT pf pf 3pF pf nf 1uF 47nH 4.7nH nf 1uF Vg Vd 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea Rev 1 26-Aug-14
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Performance (db) GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range
1-22 GHz Wideband Amplifier
1-22 GHz Wideband Amplifier Features Frequency Range : 1. 22.GHz 12dB Nominal gain Noise Figure: 2.1 @ 8GHz P1 db: 1 dbm at 1GHz. Input Return Loss > 12 db Output Return Loss > 12 db DC decoupled input
CHA3093c RoHS COMPLIANT
CHA3093c RoHS COMPLIANT 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a
GHz Broadband Low Noise Amplifier
.5 4. GHz Broadband Low Noise Amplifier Features Frequency Range:.5-4 GHz 1.8 db Mid-band Noise Figure 12.5 db Nominal Gain Very Low operating current (2V/15mA) Ideal Replacement for discrete devices 1dBm
0.5-20GHz Driver. GaAs Monolithic Microwave IC
CHA422-98F.-2GHz Driver GaAs Monolithic Microwave IC Description The CHA422-98F is a distributed driver amplifier which operates between. and 2GHz. It is designed for a wide range of applications, such
PRELIMINARY DATASHEET
PRELIMINARY DATASHEET 8-12 GHz 41dBm Power Amplifier DESCRIPTION The is a high performance dual line-up 3 stages GaAs Power Amplifier MMIC designed to operate in the X band. The has an output power of
DC to 30GHz Broadband MMIC Low-Power Amplifier
DC to 30GHz Broadband MMIC Low-Power Amplifier Features Very low power dissipation: 4.5V, 85mA (383mW) High drain efficiency (43dBm/W) Good 1.5-20GHz performance: Flat gain (11 ± 0.75dB) 16.5dBm Psat,
PRELIMINARY DATASHEET
PRELIMINARY DATASHEET Ultra Low Noise 18-26 GHz Amplifier DESCRIPTION The CGY2121XUH is a high performance GaAs Low Noise Amplifier MMIC designed to operate in the K band. The CGY2121XUH has an exceptionally
GHz GaAs MMIC Power Amplifier
17.0.0 GHz GaAs MMIC August 07 Rev 08Aug07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement.0 Small Signal Gain +.0 m Saturated Output Power 0% OnWafer RF, DC and
Data Sheet AMMC GHz Output 2 Active Frequency Multiplier. Description. Features. Applications
AMMC-1 GHz Output Active Frequency Multiplier Data Sheet Chip Size: x µm ( x mils) Chip Size Tolerance: ± µm (±. mils) Chip Thickness: ± µm ( ±. mils) Pad Dimensions: 1 x µm (x3 ±. mils) Description Avago
5-20GHz MMIC Amplifier with Integrated Bias
5-20GHz MMIC Amplifier with Integrated Bias Features Excellent performance 5-18GHz: High, flat gain (15 ± 0.5dB) Good return loss (15dB) 17.5dBm P1dB, 20dBm Psat Mixed-signal 3.3V operation: Similar small-signal
CGY2651UH/C1. Advance Information GHz 10 W Power Amplifier. Description. Features
Advance Information 37 43 GHz 10 W Power Amplifier Description The is a high-performance GaN Power Amplifier MMIC designed to operate in the Ka-band. The has 40 dbm of output power and 30% PAE @ Psat &
Keysight TC GHz High Power Output Amplifier
Keysight TC724 2-26.5 GHz High Power Output Amplifier 1GG7-8045 Data Sheet Features Wide Frequency Range: 2 26.5 GHz Moderate Gain: 7.5 db Gain Flatness: ± 1 db Return Loss: Input: 17 db Output: 14 db
CMD GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wideband performance High gain High linearity HMC98 replacement Small die size RFIN Vdd1 Vdd Vdd3 RFOUT Description The CMD91 is a wideband GaAs MMIC driver amplifier
2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The CMD29 is wideband GaAs
3 4 ACG1 ACG2. Vgg2 2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance Positive gain slope High output power Low noise figure Small die size 3 4 ACG ACG Vgg RFOUT & Vdd Description RFIN The CMD9 is wideband GaAs
DC to 30GHz Broadband MMIC Low-Noise Amplifier
DC to 30GHz Broadband MMIC Low-Noise Amplifier Features Low noise, ultra-flat gain 6-20GHz: 2.5dB NF, 18 ± 0.3dB gain Excellent 1.5-20GHz performance: Very flat gain (17 ± 0.6dB) High Psat at 20GHz (20dBm)