IRHiRel Schottky Diodes and Ultra-Fast Rectifiers Product Selection Guide.

Size: px
Start display at page:

Download "IRHiRel Schottky Diodes and Ultra-Fast Rectifiers Product Selection Guide."

Transcription

1 IRHiRel Schottky Diodes and Ultra-Fast Rectifiers Product Selection Guide

2 Introduction The latest rectifier products are now available from the world s most reliable source of power semiconductors. Whether your requirement is in the output rectification, circuit isolation, or free-wheeling design application, these new series of Schottky and high voltage ultra-fast recovery rectifiers are intended to provide the high circuit efficiency, excellent dynamic performance and unparalleled reliability our customers are accustomed to with our products. The products are available in a choice of hermetic packages with years of excellent reliability records. IRHiRel Schottky Diodes and Ultra-Fast Rectifiers are offered with the following screening and QI levels based on the DoD Department of Logistics (DLA) MIL-PRF-19500: 1. ommercial off the shelf (OTS) with no QI 2. Source ontrol Drawing (SD) 3. IRHiRel s Qualified IR List (QIRL) with TX, TXV and S level equivalent to MIL-PRF screenings, manufactured and tested on the same production line with the same flow as MIL-PRF DLA approved line. QIRL part numbers have SX, SV, SS suffix respectively. 4. DLA approved Qualified Product List (QPL) with TX, TXV, and S level screenings to MIL-PRF sold under military part number starting with JAN under DLA approved slash sheet. LDO +12/15V Output SHOTTKY/FRED LDO 12/15V RTN D Input -12/15V Output V Output RTN SHOTTKY RETIFIER 2

3 ontent Schottky Diodes 4 Ultra-Fast Diodes 6 Schottky Diodes Nomenclature 7 Ultra-Fast Diodes Nomenclature 7 3

4 Schottky Diodes portfolio Schottky Diodes Single Device Part Number DLA Qualified JEDE Part Number VR IF(AV) T Rth(J) 18-pin L 8EQ EQ D2 16SYJQ SMD SLJQ030 QP 1N7078U LJQ SLJQ SLJQ LJQ100 QPL 1N6844U LJQ LJQ150 QPL 1N7038U SMD-1 75SLQ LQ LQ SLQ SLQ LQ LQ LQ TO-254AA 35SGQ GQ SGQ SGQ GQ GQ100 QPL 1N7069T GQ SYQ TO-257AA 10YQ YQ045 QPL 1N7045T SYQ YQ SYQ YQ (15A) 0.71(15A) YQ

5 Schottky Diodes portfolio ommon athode Part Number DLA Qualified JEDE Part Number VR IF(AV) T Rth(J) SMD SLJQ LJQ045 QPL 1N7064U SLJQ LJQ (4A) 0.58(4A) SLJQ LJQ100 QPL 1N6843U LJQ150 QPL 1N7058U SMD-1 80SLQ LQ045 QPL 1N7041U LQ (20A) 0.57(20A) SLQ SLQ LQ100 QPL 1N7037U (5A) 0.53(5A) LQ (40A) 0.81(40A) LQ150 QPL 1N7039U (15A) 0.86(15A) LQ TO-254AA 35SGQ GQ045 QPL 1N6660T (20A) 0.7(20A) GQ SGQ (15A) 0.47(15A) SGQ GQ100 QPL 1N7043T (15A) 0.85(15A) GQ100 QPL 1N7062T (15A) 0.71(15A) GQ150 QPL 1N7039T (15A) 0.86(15A) GQ TO-257AA 16SYQ (7.5A) 0.33(7.5A) YQ SYQ SYQ YQ100 QPL 1N7070T YQ150 QPL 1N7047T TO-258AA 60KQ045 QPL 1N7071T (25A) 0.62(25A) KQ (25A) 0.74(25A) 0.42 TO-259AA 45IQ (25A) 0.74(25A)

6 Ultra-Fast Diodes portfolio Ultra-Fast Diodes Single Device Part Number VR IF(AV) T IF (µa) Rth(J) SMD-0.5 HFB25HJ SMD-1 HFA40HF HFA40HF HFB60HF TO-254AA HFA35HB HFA35HB HFB35HB TO-257AA HFB16HY TO-258AA HFB50H TO-259AA HFB50HI ommon athode Part Number VR IF(AV) T IF (µa) Rth(J) SMD-0.5 HFB20HJ SMD-1 HFA40HF HFA40HF HFB60HF TO-254AA HFA35HB HFA35HB HFB35HB TO-257AA HFB16HY TO-258AA HFA45H HFA45H HFB50H TO-259AA HFA45HI HFA45HI HFB50HI

7 Nomenclature Schottky Diodes Nomenclature 22 S G Q 045 SX urrent designator Process designator S = Mo, 150 No Suffix = PdMo, 175 ircuit designator No Suffix = Single Die = ommon athode onfiguration J = ommon Anode onfiguration D = Doubler onfiguration Package designator E = L-18 G = TO-254AA I = TO-259AA K = TO-258AA L = SMD-1 LI = SMD-0.5 Y = TO-257AA YI = D2 Schottky Lead option A = Lead Form Down* B = Lead Form Up = Lead Trimmed (clipped) * Lead attach if package is on SMD Screening level SX = TX Level SV = TXV Level SS = Space Level Eyelet designator (Applies only to TO-257AA package) = eramic Eyelets G = Glass Eyelets Voltage rating 030 = 30V 045 = 45V 060 = 60V 100 = 100V 150 = 150V Ultra-fast Diodes Nomenclature HF A 30 HB 60 SX Fred Process designator A = Electron Irradiated B = Platinum Diffused Lead option A = Lead Form Down* B = Lead Form Up = Lead Trimmed (clipped) D = arrier (applies only to SMD-1 and SMD-2) * Lead attach if package is on SMD Average current Package designator HB = TO-254AA H = TO-258AA HI = TO-259AA HF = SMD-1 HJ = SMD-0.5 HY = TO-257AA Voltage rating 20 = 200V 60 = 600V 120 = 1200V Screening level SX = TX Level SV = TXV Level SS = Space Level ircuit designator No Suffix = Single Die = ommon athode onfiguration J = ommon Anode onfiguration D = Doubler onfiguration Eyelet designator (Applies only to TO-257AA package) = eramic Eyelets G = Glass Eyelets 7

8 Where to buy Infineon distribution partners and sales offices: Service hotline Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Germany (German/English) hina, mainland (Mandarin/English) India (English) USA (English/German) Other countries... 00* (English/German) Direct access (interconnection fee, German/English) * Please note: Some countries may require you to dial a code other than 00 to access this international number. Please visit for your country! Mobile Product atalog Mobile app for ios and Android. More information: Published by Infineon Technologies Americas orp. El Segundo, alifornia - U.S.A 2016 Infineon Technologies Americas orp. All rights reserved. Order number: B119-I0354-V NA-E-P Date: 08 / 2016 Please note! THIS DOUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR DESRIPTION OF ANY FUNTIONALITY, ONDITIONS AND/OR QUALITY OF OUR PRODUTS OR ANY SUITABILITY FOR A PARTIULAR PURPOSE. WITH REGARD TO THE TEHNIAL SPEIFIATIONS OF OUR PRODUTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT PRODUT DATA SHEETS PROVIDED BY US. OUR USTOMERS AND THEIR TEHNIAL DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUTS FOR THE INTENDED APPLIATION. WE RESERVE THE RIGHT TO HANGE THIS DOUMENT AND/OR THE INFORMATION GIVEN HEREIN AT ANY TIME. Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices, please contact your nearest Infineon Technologies office ( Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any lifeendangering applications, including but not limited to medical, nuclear, military, life-critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury.

CoolMOS SJ MOSFETs benefits

CoolMOS SJ MOSFETs benefits SJ MOSFETs benefits in hard and soft switching SMPS topologies www.infineon.com/coolmos Hard and soft switching topologies, applications and suitable families series benefits Efficiency = C7 Price/performance

More information

600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA)

600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA) 600 V/650 V fast body diode series (CFD2//) www.infineon.com/coolmos technology is Infineon s latest generation of fast switching superjunction MOSFETs with integrated fast body diode offering improved

More information

Space Level Solutions Guide

Space Level Solutions Guide Space Level Solutions Guide JAN QPL & Equivalent Diodes....2-3 Space Program Involvement...3 Space Level Die 4 Schottky Rectifiers 5 Silicon Carbide Rectifiers & Bridges..6 Modules.....7 Tools & Analysis....8

More information

Classic PROFET and Mini PROFET Leading the Way in Energy Robustness

Classic PROFET and Mini PROFET Leading the Way in Energy Robustness Classic PROFET and Mini PROFET Leading the Way in Energy Robustness [ www.infineon.com/profet ] Introduction The well-established high-side switch families Classic PROFET and Mini PROFET were designed

More information

RDHA701FP10A8CK RDHA701FP10A8QK

RDHA701FP10A8CK RDHA701FP10A8QK PD-95878F RDHA701FP10A8CK RADIATION HARDENED, OCTAL BUFFERED and NON-BUFFERED SOLID STATE RELAY 100V, 1.3A Product Summary Part Number Voltage Current tr / tf Buffer RDHA701FP10A8CK 100V 1.3A Fast None

More information

+Vin. Input Return. +Vin. Input Return

+Vin. Input Return. +Vin. Input Return PD-97874A SF461 SERIES EMI FILTER HYBRID-HIGH RELIABILITY Description SF461 Series is part of the International Rectifier HiRel family of products. The SF461 Series EMI filter is designed to provide full

More information

OptiMOS and StrongIRFET combined portfolio

OptiMOS and StrongIRFET combined portfolio combined portfolio 20 V 300 V N-channel Power MOSFETs www.infineon.com/powermosfet-20v-300v A powerful combination Infineon s semiconductors are designed to bring more efficiency, power density and cost

More information

Emitter Controlled 4 High Power Technology IDC73D120T8H

Emitter Controlled 4 High Power Technology IDC73D120T8H Diode Emitter Controlled 4 High Power Technology Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and Electrical

More information

Series PVT322PbF. Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Dual Pole, Normally Open, 0-250V, 170mA AC/DC

Series PVT322PbF. Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Dual Pole, Normally Open, 0-250V, 170mA AC/DC Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Dual Pole, Normally Open, 0-250V, 170mA AC/DC General Description The PVT322 Series Photovoltaic Relay is a dual-pole, normally open solid-state

More information

AMA28XXS SERIES. 28V Input, Single Output HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER PD-94687G AMA

AMA28XXS SERIES. 28V Input, Single Output HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER PD-94687G AMA PD-94687G AMA8XXS SERIES HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER 8V Input, Single Output Description The AMA8XXS Series of DC-DC converter module has been specifically designed for operation

More information

ATR28XXT SERIES. 28V Input, Triple Output HYBRID-HIGH RELIABILITY DC-DC CONVERTER PD-94551E. Description ATR. Features

ATR28XXT SERIES. 28V Input, Triple Output HYBRID-HIGH RELIABILITY DC-DC CONVERTER PD-94551E. Description ATR. Features PD-94551E ATR28XXT SERIES HYBRID-HIGH RELIABILITY DC-DC CONVERTER 28V Input, Triple Output Description The ATR28XXT Series of DC-DC converters provide 30W of output power over the full military temperature

More information

AF28461 SERIES EMI FILTER HYBRID-HIGH RELIABILITY PD Description

AF28461 SERIES EMI FILTER HYBRID-HIGH RELIABILITY PD Description PD-97851 AF28461 SERIES EMI FILTER HYBRID-HIGH RELIABILITY Description The AF28461 Series EMI filter is designed to provide full compliance with the input line reflected ripple current requirement specified

More information

IRHM krads(si) A JANSR2N7269 IRHM krads(si) A JANSH2N7269 TO-254AA

IRHM krads(si) A JANSR2N7269 IRHM krads(si) A JANSH2N7269 TO-254AA PD-90674G IRHM7250 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 200V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part

More information

BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W

BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W BAS4.../BAS4W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing Pb-free (RoHS compliant) package Qualified according

More information

IRFYB9130C, IRFYB9130CM

IRFYB9130C, IRFYB9130CM PD-97896 IRFYB9130C, IRFYB9130CM POWER MOSFET THRU-HOLE (TO-257AA Low-Ohmic Tabless) 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D Eyelets IRFYB9130C 0.30-11.2A Ceramic

More information

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A B hanges in table I. Page 4. Output current pin 1 test, V = 40 V, subgroups 2, 3: change limits to -132 µa min and -146 µa max. Page 5. Frequency output,

More information

VOLTAGE RANGE 200 Volts CURRENT 8.0 Amperes C J. C Storage Temperature Range

VOLTAGE RANGE 200 Volts CURRENT 8.0 Amperes C J. C Storage Temperature Range SR82P SHOTTKY BARRIER RETIFIER VOLTAGE RANGE 2 Volts URRENT 8. Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity

More information

IRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY

IRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE

More information

ARF461 SERIES EMI FILTER HYBRID-HIGH RELIABILITY PD-94588C. Description ARF

ARF461 SERIES EMI FILTER HYBRID-HIGH RELIABILITY PD-94588C. Description ARF PD-94588C ARF461 SERIES EMI FILTER HYBRID-HIGH RELIABILITY Description The ARF Series EMI filter has been designed to provide full compliance with the input line reflected ripple current requirement specified

More information

PERFORMANCE SPECIFICATION SHEET

PERFORMANCE SPECIFICATION SHEET The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 August 2015. INCH-POUND MIL-PRF-19500/731B 22 May 2015 SUPERSEDING MIL-PRF-19500/731A 5

More information

GHP2815S. 120W, Single Output HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER

GHP2815S. 120W, Single Output HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER PD-97850 HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER 20W, Single Output Description The is a low voltage 5V/8A single output DC-DC converter. It is specifically designed in response to the

More information

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Drawing updated to reflect current requirements. gt R. Monnin

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Drawing updated to reflect current requirements. gt R. Monnin REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. gt 02-09-09 R. Monnin B Five year review requirement. -rrp 08-11-17 R. HEBER Add case outline H. Add

More information

IRHNA57064 JANSR2N7468U2 R 5 60V, N-CHANNEL REF: MIL-PRF-19500/673 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J TECHNOLOGY

IRHNA57064 JANSR2N7468U2 R 5 60V, N-CHANNEL REF: MIL-PRF-19500/673 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J TECHNOLOGY PD-91852J IRHNA5764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA5764 1 krads(si) 5.6m 75A* IRHNA5364 3 krads(si) 5.6m

More information

AMR28XXD SERIES. 28V Input, Dual Output HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER PD-94690E AMR

AMR28XXD SERIES. 28V Input, Dual Output HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER PD-94690E AMR PD-94690E AMR28XXD SERIES HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER 28V Input, Dual Output AMR Description The AMR28XXD Series of DC-DC converter modules has been specifically designed

More information

IRF3CMS17N80. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 800V, N-CHANNEL PD Product Summary Part Number RDS(on) I D.

IRF3CMS17N80. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 800V, N-CHANNEL PD Product Summary Part Number RDS(on) I D. PD-97842 IRF3CMS7N8 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 8V, N-CHANNEL Product Summary Part Number RDS(on) I D IRF3CMS7N8.34 5A Low-Ohmic TO-254AA Description The MOSFET uses Infineon 8V C3 CoolMOS

More information

IRHY57234CMSE JANSR2N7556T3 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) PD-93823D

IRHY57234CMSE JANSR2N7556T3 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) PD-93823D PD-93823D RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number 100 krads(si)

More information

IRHNJ597Z30 JANSR2N7519U3 R 5 30V, P-CHANNEL REF: MIL-PRF-19500/732 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94661C TECHNOLOGY

IRHNJ597Z30 JANSR2N7519U3 R 5 30V, P-CHANNEL REF: MIL-PRF-19500/732 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94661C TECHNOLOGY PD-9466C IRHNJ597Z3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 3V, P-CHANNEL REF: MIL-PRF-95/732 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ597Z3

More information

QPL Part Number JANSR2N7270 IRHM krads(si) A JANSF2N7270 IRHM krads(si) A JANSG2N7270 JANSH2N7270 TO-254

QPL Part Number JANSR2N7270 IRHM krads(si) A JANSF2N7270 IRHM krads(si) A JANSG2N7270 JANSH2N7270 TO-254 PD-90673C IRHM7450 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 500V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7450

More information

IRHMS JANSR2N7524T1 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E

IRHMS JANSR2N7524T1 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E PD-9473E IRHMS59764 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) 6V, P-CHANNEL REF: MIL-PRF-95/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number

More information

IRHY63C30CM 300k Rads(Si) A TO-257AA

IRHY63C30CM 300k Rads(Si) A TO-257AA PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM

More information

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A Update to reflect latest changes in format and requirements. Editorial changes throughout. -les 01-06-13 Raymond Monnin B Update drawing to current requirements.

More information

IRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY

IRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY PD-9464D IRHNA59764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 6V, P-CHANNEL REF: MIL-PRF-195/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA59764

More information

IRHNA9160 JANSR2N7425U

IRHNA9160 JANSR2N7425U PD-91433D IRHNA9160 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 100V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part

More information

RF front-end solutions for mobile applications. Selection guide.

RF front-end solutions for mobile applications. Selection guide. RF front-end solutions for mobile applications Selection guide www.infineon.com/rf 2 Contents Introduction 4 Infineon s RF front-end system solutions 4 Overview of Infineon s RF front-end products 5 Antenna

More information

AMF28XXXXS SERIES. 28V Input, Single Output HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER PD-94689E AMF

AMF28XXXXS SERIES. 28V Input, Single Output HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER PD-94689E AMF PD-9689E AMF8XXXXS SERIES HYBRID-HIGH RELIABILITY RADIATION TOLERANT DC-DC CONVERTER 8V Input, Single Output Description The AMF8XXXXS Series of DC-DC converter modules has been specifically designed for

More information

TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant

TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant Features ESD/transient protection of high speed data lines according to: - IEC61000-4-2 (ESD):

More information

IRHN7150 JANSR2N7268U

IRHN7150 JANSR2N7268U PD-90720F IRHN7150 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 100V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHN7150

More information

IRHNJ57230SE JANSR2N7486U3 R 5 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-93836C TECHNOLOGY

IRHNJ57230SE JANSR2N7486U3 R 5 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-93836C TECHNOLOGY PD-93836C IRHNJ5723SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, N-CHANNEL REF: MIL-PRF-95/74 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ5723SE

More information

IRHYS9A7130CM JANSR2N7648T3

IRHYS9A7130CM JANSR2N7648T3 PD-97844A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) V, N-CHANNEL REF: MIL-PRF-95/775 R 9 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads (Si) 35m 3A* IRHYS9A33CM

More information

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Changes in accordance with NOR 5962-R M. A. FRYE

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Changes in accordance with NOR 5962-R M. A. FRYE REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A hanges in accordance with NOR 5962-R177-96. 96-07-10 M. A. FRYE B Drawing updated to reflect current requirements. Redrawn. - ro 05-05-02 R. MONNIN Update

More information

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Changes in accordance with NOR 5962-R Michael A. Frye

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Changes in accordance with NOR 5962-R Michael A. Frye REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A hanges in accordance with NOR 5962-R057-93. 92-12-29 Michael A. Frye B Drawing updated to reflect current requirements. - ro 02-03-07 Raymond Monnin

More information

I D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g

I D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a

More information

Resonant wireless power transfer

Resonant wireless power transfer White Paper Resonant wireless power transfer Abstract Our mobile devices are becoming more and more wireless. While data transfer of mobile devices is already wireless, charging is typically still performed

More information

Wireless charging for consumer

Wireless charging for consumer Wireless charging for consumer Introducing a new cost effective system solution to ensure excellent user experience www.infineon.com/wirelesscharging Wireless charging for consumer applications What is

More information

Green. PowerDI123. Top View. Part Number Compliance Case Packaging DFLS260Q-7 Automotive PowerDI /Tape & Reel

Green. PowerDI123. Top View. Part Number Compliance Case Packaging DFLS260Q-7 Automotive PowerDI /Tape & Reel Green 2.A SURFAE MOUNT SHOTTKY BARRIER RETIFIER POWERDI 123 Product Summary V R (V) I F (A) V F MAX (V) @ +25 I R MAX (ma) @ +25 6 2..62.1 Description and Applications This Schottky Barrier Rectifier has

More information

IRHNA57Z60 JANSR2N7467U2 R 5 30V, N-CHANNEL REF: MIL-PRF-19500/683 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91787J TECHNOLOGY

IRHNA57Z60 JANSR2N7467U2 R 5 30V, N-CHANNEL REF: MIL-PRF-19500/683 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91787J TECHNOLOGY PD-91787J IRHNA57Z6 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57Z6 1 krads(si) 3.5m 75A* IRHNA53Z6 3 krads(si) 3.5m

More information

AHF SERIES HYBRID-HIGH RELIABILITY DC-DC CONVERTER PD-94541E. 28V Input, Single/Dual Output AHF. Description. Features

AHF SERIES HYBRID-HIGH RELIABILITY DC-DC CONVERTER PD-94541E. 28V Input, Single/Dual Output AHF. Description. Features PD-9454E AHF SERIES HYBRID-HIGH RELIABILITY DC-DC CONVERTER 28V Input, Single/Dual Output Description The AHF Series of DC-DC converters feature single or dual outputs over the full military temperature

More information

IRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, P-CHANNEL TECHNOLOGY PD-95860

IRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, P-CHANNEL TECHNOLOGY PD-95860 PD-9586 IRHLMS79764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS79764 krads(si).8-45a*

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (Transient Voltage Suppressor) Bi-directional, 3.3 V, 6. pf, 2, RoHS and Halogen Free compliant Feature list ESD/transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air/contact discharge) -

More information

IRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, N-CHANNEL TECHNOLOGY PD-97836

IRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, N-CHANNEL TECHNOLOGY PD-97836 PD-97836 IRHLMS7764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS7764 krads(si).2 45A*

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (Transient Voltage Suppressor) Bi-directional,. V,.8 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air), ± kv (contact discharge)

More information

High Voltage Input Rectifier Diode, 60 A

High Voltage Input Rectifier Diode, 60 A VS-6EPS..PbF Series, VS-6EPS..-M3 Series High Voltage Input Rectifier Diode, 6 FETURES TO-247 modified 2 3 Base cathode 2 3 athode node Very low forward voltage drop 5 max. operating junction temperature

More information

2N7622U2 IRHLNA797064

2N7622U2 IRHLNA797064 PD-97174B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE-MOUNT (SMD-2) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).17-56a* IRHLNA79364 3 krads(si).17-56a*

More information

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,

More information

B170BQ - B1100BQ. Features and Benefits. Product Summary C) Mechanical Data. Applications. Ordering Information (Note 5) Marking Information

B170BQ - B1100BQ. Features and Benefits. Product Summary C) Mechanical Data. Applications. Ordering Information (Note 5) Marking Information Green 1.0A HIGH VOLTAGE SHOTTKY BARRIER RETIFIER Product Summary (@+25 ) B170BQ B180BQ B190BQ 70 1.0 0.79 0.5 80 1.0 0.79 0.5 90 1.0 0.79 0.5 B10BQ 0 1.0 0.79 0.5 Features and Benefits Guard Ring Die onstruction

More information

Current CAGE CODE is 67268

Current CAGE CODE is 67268 REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A Update boilerplate to MIL-PRF-38535 requirements. jak 01-06-12 Thomas M. Hess B Update boilerplate to MIL-PRF-38535 requirements. - LTG 08-02-25 Thomas

More information

TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant

TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC),.3 pf, 21, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC61-4-2

More information

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5089, REV. A.2

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5089, REV. A.2 Ultrafast Recovery Rectifier Qualified per MIL-PRF-19500/585 Hermetic, non-cavity glass package Metallurgically bonded Operating and storage temperature: -65 o C to +175 o All parts are 100% hot solder

More information

IRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary

IRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary PD-97879A IRHNS576 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNS576 krads(si).2 75A* IRHNS536 3 krads(si).2

More information

RIC74424H RADIATION HARDENED NON-INVERTING DUAL OUTPUT MOSFET DRIVERS PD Product Summary. Description

RIC74424H RADIATION HARDENED NON-INVERTING DUAL OUTPUT MOSFET DRIVERS PD Product Summary. Description PD-97901 RIC74424H RADIATION HARDENED NON-INVERTING DUAL OUTPUT MOSFET DRIVERS Product Summary Part Number Output Voltage Range Peak Current Typical ton/toff RIC74424H 5 to 20V 3A 110ns/90ns 8 LEAD FLAT

More information

BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package

BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package BAT68 BAT68- BAT68-W BAT68-6 BAT68-6W BAT68-7W BAT68-8S!!! "!

More information

IRHF57234SE 100 krads(si) A TO-39

IRHF57234SE 100 krads(si) A TO-39 PD-9383C IRHF57234SE RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) 25V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHF57234SE krads(si).42 5.2A TO-39

More information

IRHI7360SE. 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) PD-91446B

IRHI7360SE. 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) PD-91446B PD-91446B IRHI7360SE RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHI7360SE 100 krads(si) 0.20

More information

IRF5M V, P-CHANNEL HEXFET MOSFET TECHNOLOGY POWER MOSFET THRU-HOLE (TO-254AA) PD-94155A

IRF5M V, P-CHANNEL HEXFET MOSFET TECHNOLOGY POWER MOSFET THRU-HOLE (TO-254AA) PD-94155A PD-9455A IRF5M495 POWER MOSFET THRU-HOLE (TO-254AA) 55V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF5M495.3-35A* TO-254AA Description Fifth Generation HEXFET power MOSFETs

More information

PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL, SCHOTTKY, COMMON CATHODE, TYPE 1N7070CCT3, JAN, JANTX, JANTXV, AND JANS

PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL, SCHOTTKY, COMMON CATHODE, TYPE 1N7070CCT3, JAN, JANTX, JANTXV, AND JANS INCH-POUND MIL-PRF-19500/763 22 JANUARY 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL, SCHOTTKY, COMMON CATHODE, TYPE, JAN, JANTX, JANTXV, AND JANS This specification

More information

R 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY

R 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2

More information

ILD2035. MR16 3 W Control Board with ILD2035. Application Note AN214. Industrial and Multimarket. Revision: 1.0 Date:

ILD2035. MR16 3 W Control Board with ILD2035. Application Note AN214. Industrial and Multimarket. Revision: 1.0 Date: ILD2035 MR16 3 W Control Board with ILD2035 Application Note AN214 Revision: 1.0 Date: Industrial and Multimarket Edition Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies

More information

High Voltage Input Rectifier Diode, 60 A

High Voltage Input Rectifier Diode, 60 A High Voltage Input Rectifier Diode, 6 VS-6EPS..PbF Base common cathode 2 FETURES Designed and qualified according to JEDE-JESD47 ompliant to RoHS Directive 22/95/E TO-247 modified 3 athode node 2 PPLITIONS

More information

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110 Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,

More information

Absolute Maximum Ratings (Per Die)

Absolute Maximum Ratings (Per Die) PD-97887 IRHLG7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG7S7 krads(si).33.8a IRHLG7S3

More information

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS BAT5... Silicon Schottky Diodes Low barrier type for DBS mixer applications up to GHz, phase detectors and modulators Low noise figure Pb-free (RoHS compliant) package BAT5-EL BAT5-ELS BAT5-W BAT5-4W BAT5-5W

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (transient voltage suppressor) Bi-directional, 5.5 V, 3.5 pf, 21, RoHS and halogen free compliant Features ESD/transient protection of susceptible I/O lines to: - IEC61-4-2 (ESD): ±3 kv (air/contact

More information

IRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary

IRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International

More information

R 7 2N7624U3 IRHLNJ V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-97302D TECHNOLOGY.

R 7 2N7624U3 IRHLNJ V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-97302D TECHNOLOGY. PD-9732D 2N7624U3 IRHLNJ79734 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNJ79734 krads(si).72-22a*

More information

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Drawing updated to reflect current requirements. - lgt Raymond Monnin

REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED. A Drawing updated to reflect current requirements. - lgt Raymond Monnin REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. - lgt 01-06-13 Raymond Monnin B orrections to table I test conditions and footnote. Editorial changes

More information

Part Number Radiation Level RDS(on) I D IRHLUC7970Z4 100 krads(si) A IRHLUC7930Z4 300 krads(si) A LCC-6

Part Number Radiation Level RDS(on) I D IRHLUC7970Z4 100 krads(si) A IRHLUC7930Z4 300 krads(si) A LCC-6 PD-97574A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 6V, DUAL P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).6 -.65A IRHLUC793Z4 3 krads(si).6

More information

-2.7A. Pin Out - Top View

-2.7A. Pin Out - Top View 6V P-HANNEL ENHANEMENT MODE MOSFET Product Summary Features and Benefits ADVANE INFORMATION NEW PRODUT V (BR)DSS -6V Description R DS(on) I D T A = +25 5mΩ @ V GS = -V -3A 85mΩ @ V GS = -4.5V -2.7A This

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (transient voltage suppressor) Bi-directional, 5.5 V,.2 pf, 5, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC6-4-2 (ESD): ±25 kv

More information

IRHNJ63C krads(si) A SMD-0.5

IRHNJ63C krads(si) A SMD-0.5 PD-9798D 2N7598U3 IRHNJ67C3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNJ67C3 krads(si) 3. 3.4A IRHNJ63C3

More information

IRFF230 JANTX2N6798 JANTXV2N6798

IRFF230 JANTX2N6798 JANTXV2N6798 PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TVS (transient voltage suppressor) Bi-directional, 5.5 V,.3 pf, 21, RoHS and halogen free compliant Features ESD/transient protection of high speed data lines according to: - IEC61-4-2 (ESD): ±18 kv (air/contact

More information

54AC11533, 74AC11533 OCTAL D-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS

54AC11533, 74AC11533 OCTAL D-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS 5A1533, 7A1533 TAL D-TYPE TRANSPARENT LATHES SAS00 D257, JULY 187 REVISED APRIL 13 8-Latches in a Single Package 3-State Bus-Driving Inverting s Full Parallel Access for Loading Buffered ontrol Inputs

More information

Secondary Side Synchronous Rectifier Controller

Secondary Side Synchronous Rectifier Controller Secondary Side Synchronous Rectifier ontroller Features High speed secondary synchronous rectifier High system efficiency from no load to full load Light load protection function DM topology 200 high voltage

More information

IRHLNM7S7110 2N7609U8

IRHLNM7S7110 2N7609U8 PD-97888 IRHLNM7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.2) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMN7S7 krads(si).29 6.5A IRHLMN7S3

More information

Absolute Maximum Ratings (Per Die)

Absolute Maximum Ratings (Per Die) PD-9778A IRHLG77 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG77 krads(si).285.8a IRHLG73 3 krads(si).285.8a

More information

PERFORMANCE SPECIFICATION SHEET

PERFORMANCE SPECIFICATION SHEET The documentation and process conversion measures necessary to comply shall with this document shall be completed by 22 December 2016. METRIC MIL-PRF-19500/594C 22 September 2016 SUPERSEDING MIL-PRF-19500/594B

More information

Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 80 V Isolating voltage Viso Terminals-to-case, AC.

Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 80 V Isolating voltage Viso Terminals-to-case, AC. YG865C08R Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25 C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM -

More information

STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, DIGITAL-LINEAR, DIFFERENTIAL LINE RECEIVER, MONOLITHIC SILICON

STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, DIGITAL-LINEAR, DIFFERENTIAL LINE RECEIVER, MONOLITHIC SILICON REVISIONS LTR DESRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. - ro 00-07-25 R. MONNIN B Drawing updated to reflect current requirements. gt 02-12-30 R. MONNIN Make corrections to +VITH and VITH

More information

SN54F74, SN74F74 DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH CLEAR AND PRESET

SN54F74, SN74F74 DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH CLEAR AND PRESET WITH LEAR AND PRESET SDFS0A MARH 197 REVISED OTOBER 199 Package Optio Include Plastic Small-Outline Packages, eramic hip arriers, and Standard Plastic and eramic 00-mil DIPs description These devices contain

More information

IRF7MS V, N-CHANNEL HEXFET MOSFET TECHNOLOGY. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PD-94609A

IRF7MS V, N-CHANNEL HEXFET MOSFET TECHNOLOGY. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PD-94609A PD-9469A IRF7MS297 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 75V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF7MS297.55 45A* Description Seventh Generation HEXFET power

More information

Optocoupler, Photodarlington Output, AC Input, High Gain (Single, Dual Channel)

Optocoupler, Photodarlington Output, AC Input, High Gain (Single, Dual Channel) Optocoupler, Photodarlington Output, A Input, High Gain (Single, Dual hannel) A/ 6 B FEATURES A or polarity insensitive inputs /A N 2 3 4 E Built-in reverse polarity input protection Industry standard

More information

Ultrafast Soft Recovery Diode, 30 A FRED Pt Gen 4

Ultrafast Soft Recovery Diode, 30 A FRED Pt Gen 4 Ultrafast Soft Recovery Diode, 30 FRED Pt Gen 4 3 2 TO-247D 2L Base cathode PRODUT SUMMRY Package TO-247D 2L I F(V) 30 V R 600 V V F at I F.9 V t rr typ. see Recovery table T J max. 75 Diode variation

More information

TRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L

TRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L IGBT TRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and Electrical

More information

ESD0P2RF-02LRH ESD0P2RF-02LS

ESD0P2RF-02LRH ESD0P2RF-02LS Bidirectional Ultra Low Capacitance TVS Diode ESD / transient protection of RF signal lines according to: IEC6004 (ESD): ±0kV (contact) IEC60044 (EFT): 40 A (5 / 50 ns) IEC60045 (Surge): 3 A (8 / 0 µs)

More information

Schottky Barrier Rectifier

Schottky Barrier Rectifier Available on commercial versions Schottky Barrier Rectifier Qualified per MIL-PRF-19500/553 DESCRIPTION Qualified Levels: JAN, JANTX, JANTXV and JANS This schottky barrier diode provides low forward voltage

More information

B3XXXBE B3XXBE B370BE-B3100BE B370CE-B3100CE. Features and Benefits. Product Summary. Mechanical Data. Description and Applications

B3XXXBE B3XXBE B370BE-B3100BE B370CE-B3100CE. Features and Benefits. Product Summary. Mechanical Data. Description and Applications reen B370BE-B3100BE 3.0A SHOTTKY BARRIER RETIFIER Product Summary Device V RRM (V) I O (A) V F Max (V) I R Max (ma) @ +25 @ +25 B370BE/E 70 3.0 0.79 0.10 B380BE/E 80 3.0 0.79 0.15 B390BE/E 90 3.0 0.79

More information

PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1,

PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1, Ω Ω Ω Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1, 2008-10-02 Data Sheet 2 Rev. 1.1, 2008-10-02 Data Sheet 3 Rev. 1.1, 2008-10-02 Ω Ω Ω Ω Ω Ω ± ± ± Ω μ Data Sheet 4 Rev. 1.1, 2008-10-02 = Ω Ω

More information

Green. Bottom View. Top View

Green. Bottom View. Top View Product Summary B140Q/BQ V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 40 1.0 0.5 0.5 B150Q, B160Q V RRM (V) I O (A) V Max (V) I R Max (ma) T A = +25 T A = +25 50/60 1.0 0.7 0.5 Description

More information

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage

More information

Optocoupler, Phototransistor Output, Dual Channel

Optocoupler, Phototransistor Output, Dual Channel Optocoupler, Phototransistor Output, Dual hannel Vishay Semiconductors i79073 DESRIPTION The is a two channel optocoupler for high density applications. Each channel consists of an optically coupled pair

More information