SAX263 [10 30] MHz Tunable Bandpass Filter
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![SAX263 [1 3] MHz Tunable Bandpass Filter Application The SAX263 electronically](/docs-images/96/128472078/images/1-2.jpg "tunable bandpass filter is designed for Tactical Communications Applications using")
1 SAX263 [1 3] MHz Tunable Bandpass Filter Application The SAX263 electronically tunable bandpass filter is designed for Tactical Communications Applications using binary weighted digital tunable capacitor arrays. Features Full Tactical Communications band resolutions Low insertion loss Fast tuning across band to.5 MHz resolution 33 dbm P1dB DC Power < 1 mw Copyright 218 NewEdge Signal Solutions, Inc. Information is subject to change without notice. See for latest information.
2 Operating Conditions Parameter Specification Min Typ Max Units Supply Voltage V Supply Current ma Tunable Frequency Range MHz Input / Output Impedance Ohms Return Loss [1-3] MHz db Insertion Loss [1-3] MHz db 3dB Bandwidth % Shape Factor Overall Low Side High Side Noise Figure db Tuning Speed μs Tuning Step Size [1-3] MHz MHz P1dB Input Power [1-3] MHz dbm Operating Temperature C Tuning Control Serial [SPI] Pin No. Label Description, Conditions 1 RF IN RF In 2-3,5,15-16,18-2,22,31 GND Ground 4 VCC [+5V] +5VDC Supply Voltage 6,1,23-3 NC Not Connected 7-9,11 NC Internal Use Only 12 SPI_MOSI SPI Mode: Serial Tune Interface Master Out Slave Input 13 SPI_CLK SPI Mode. Serial Tune Interface Clock 14 SPI_CS SPI Mode. Serial Tune Chip Select Vout +35VDC Out 21 RF OUT RF Out
3 Mechanical Size [2.3 x 1.4 x.6] inch Interconnect Pins 1 Row 21 pins 1 Row 1 pins Pin Diameter 2 mil Pin Length.15 inch max Pin Configuration External jump SAX263 Insertion Loss SN Insertion Loss [db]
4 SAX263 +/- 1% Rejection -5 Insertion Loss [db] requency [MHz] SAX263 Frequency Accuracy
5 Disclaimer Specifications are subject to change without notice. NewEdge Signal Solutions, LLC believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by NewEdge Signal Solutions for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of NewEdge Signal Solutions. NewEdge Signal Solutions makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by NewEdge Signal Solutions in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. NewEdge Signal Solutions products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the NewEdge Signal Solutions product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. All product sales are governed under NewEdge Signal Solutions Terms and Conditions ( as of date of purchase. Global Stocking Distributor Richardson RFPD Regional Direct Sales Representatives Upstate New York & New England: WLM Components Long Island / NJ / Eastern PA: Sertechmcm FL / GA / SC / NC / AL / MS / TN: Eastern Component Sales India Market: Unified Electro-Tech PVt. Ltd venkat_reddy@unified.co.in
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Rev 0.0 May 2017 CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt
CMPA801B W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Features. Applications
CMPA801B025 25 W, 8.5-11.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
Features. Applications
Teeny Ultra-Low Power Op Amp General Description The is a rail-to-rail output, operational amplifier in Teeny SC70 packaging. The provides 4MHz gain-bandwidth product while consuming an incredibly low
Efficiency (%) c261402fc_gr1. Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 25 C unless otherwise indicated
c26142fc_gr1 Thermally-Enhanced High Power RF LDMOS FET 14 W, 28 V, 26 269 MHz Description The is a 14-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 26
= 25 C) of Demonstration Amplifier. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units. 43 dbm
Rev 3.1 - June 2015 CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM1250-04QG Features Low I/O capacitance at 5pF at 0V In-system ESD protection to ±8kV contact discharge, per the IEC 61000-4-2 international
Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 18 W, 28 V, 9 96 MHz Description The PTFB9182FC LDMOS FET is designed for use in power amplifier applications in the 9 MHz to 96 MHz frequency band. Features
Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W, 28 V, 1805 2200 MHz Description The is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input matched and
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout
60 W, DC MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications. = 25 C) of Demonstration Amplifier
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic
Drain Efficiency (%) 1300 MHz 1400 MHz 15. Characteristic Symbol Min Typ Max Unit
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to frequency band. Features include high
MARKING DIAGRAMS Split Supplies Single Supply PIN CONNECTIONS MAXIMUM RATINGS ORDERING INFORMATION SO 14 D SUFFIX CASE 751A
The MC3403 is a low cost, quad operational amplifier with true differential inputs. The device has electrical characteristics similar to the popular MC1741C. However, the MC3403 has several distinct advantages
MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA
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CGH55015F2 / CGH55015P2
Rev 4.0 May 2015 CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree s CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Ultra Wide Band Low Noise Amplifier 0.01GHz~10GHz Electrical Specifications, TA = 25, Vcc = 12V Features Gain: 28dB Typical Noise Figure: 2.5dB Typical High P1dB: 15dBm Typical Supply Voltage: 12V Parameter
CMPA F. 25 W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Applications. Features
CMPA558525F 25 W, 5.5-8.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA558525F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
IMD Shoulder (dbc) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806
maintaining high gain and efficiency. Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain db = 28 dbm
CGHVF006S 6 W, DC - 5 GHz, 40V, GaN HEMT Cree s CGHVF006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
Advance PTNC210604MD. Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W, 28 V, MHz. Description. Features
Advance PTNC210604MD Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W, 28 V, 1805 2200 MHz Description The PTNC210604MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates