FODM121 Series, FODM124, FODM2701, FODM Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
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1 FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers Features More than 5 mm Creepage/Clearance Compact 4-Pin Surface Mount Package (2.4 mm Maximum Standoff Height) Current Transfer Ratio in Selected Groups: DC Input: FODM2: 5 6% FODM2A: 3% FODM2B: 5 5% FODM2C: 2% FODM24: % MIN FODM27: 5 3% AC Input: FODM275: 5 3% Safety and Regulatory Approvals: UL577, 3,75 VAC RMS for Minute DIN-EN/IEC , 565 V Peak Working Insulation Voltage Functional Block Diagram ANODE CATHODE 2 4 COLLECTOR 3 EMITTER Equivalent Circuit FODM2, FODM24, FODM27 ANODE CATHODE 2 Equivalent Circuit FODM275 Figure. Schematic 4 COLLECTOR 3 EMITTER Applications Digital Logic Inputs Microprocessor Inputs Power Supply Monitor Twisted Pair Line Receiver Telephone Line Receiver Description November 25 The FODM2 series, FODM24, and FODM27 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM275 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Figure 2. Package Outlines FODM2 Series, FODM24, FODM27, FODM275 Rev..7
2 Safety and Insulation Ratings As per DIN EN/IEC , this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Note:. Safety limit values maximum values allowed in the event of a failure. Characteristics Installation Classifications per DIN VDE < 5 V RMS I IV /.89 Table, For Rated Mains Voltage < 3 V RMS I III Climatic Classification 4//2 Pollution Degree (DIN VDE /.89) 2 Comparative Tracking Index 75 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x.6 = V PR, Type and Sample Test with t m = s, Partial Discharge < 5 pc 94 V peak Input-to-Output Test Voltage, Method B, V IORM x.875 = V PR, % Production Test with t m = s, Partial Discharge < 5 pc 6 V peak V IORM Maximum Working Insulation Voltage 565 V peak V IOTM Highest Allowable Over-Voltage 6 V peak External Creepage 5 mm External Clearance 5 mm DTI Distance Through Insulation (Insulation Thickness).4 mm T S Case Temperature () 5 C I S,INPUT Input Current () 2 ma P S,OUTPUT Output Power () 3 mw R IO Insulation Resistance at T S, V IO = 5 V () > 9 Ω FODM2 Series, FODM24, FODM27, FODM275 Rev..7 2
3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T A = 25 C Unless otherwise specified. Symbol Parameter Value Unit TOTAL PACKAGE T STG Storage Temperature -4 to +25 C T OPR Operating Temperature -4 to + C T J Junction Temperature -4 to +25 C T SOL Lead Solder Temperature 26 for sec C EMITTER I F (avg) Continuous Forward Current 5 ma I F (pk) Peak Forward Current ( µs pulse, 3 pps.) A V R Reverse Voltage 6 V Power Dissipation 7 mw P D Derate linearly (Above 75 C).4 mw/ C DETECTOR I C Continuous Collector Current 8 ma V CEO Collector-Emitter Voltage FODM2 Series, FODM24 8 FODM27, FODM275 4 V V ECO Emitter-Collector Voltage 6 V Power Dissipation 5 mw P D Derate linearly (Above 8 C) 3.27 mw/ C FODM2 Series, FODM24, FODM27, FODM275 Rev..7 3
4 Electrical Characteristics T A = 25 C unless otherwise specified. Symbol Parameter Device Test Conditions Min. Typ. Max. Unit INDIVIDUAL COMPONENT CHARACTERISTICS Emitter V F I R Detector BV CEO Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage FODM2 Series, FODM24 FODM27 FODM275 FODM2 Series, FODM24, FODM27 FODM2 Series, FODM24 FODM27, FODM275 I F = ma..3 I F = 5 ma I F = ±5 ma Note: 2. Steady state isolation voltage, V ISO, is an internal device dielectric breakdown rating. For this test, pins and 2 are common, and pins 3 and 4 are common..4 V R = 5 V 5 µa I C = ma, I F = Emitter-Collector BV ECO All I Breakdown Voltage E = µa, I F = 7 V I CEO Collector Dark Current All V CE = 4 V, I F = na C CE Capacitance All V CE = V, f = MHz pf TRANSFER CHARACTERISTICS CTR V CE(SAT) DC Current Transfer Ratio FODM27 I F = 5 ma, V CE = 5 V 5 3 FODM275 I F = ±5 ma, V CE = 5 V 5 3 FODM2 5 6 FODM2A 3 I F = 5 ma, V CE = 5 V FODM2B 5 5 FODM2C 2 I F = ma, V CE =.5 V 2 FODM24 I F =.5 ma, V CE =.5 V 5 CTR Symmetry FODM275 I F = ±5 ma, V CE = 5 V.3 3. Saturation Voltage t r Rise Time (Non-Saturated) t f Fall Time (Non-Saturated) ISOLATION CHARACTERISTICS V ISO FODM2 Series I F = 8 ma, I C = 2.4 ma.4 FODM24 I F = ma, I C =.5 ma.4 FODM27 I F = ma, I C = 2 ma.3 FODM275 I F = ± ma, I C = 2 ma.3 All All I C = 2 ma, V CE = 5 V, R L = Ω I C = 2 ma, V CE = 5 V, R L = Ω 8 4 V V % V 3 µs 3 µs Steady State Isolation Voltage (2) All minute 375 VAC RMS FODM2 Series, FODM24, FODM27, FODM275 Rev..7 4
5 Typical Performance Curves T A = 25 C unless otherwise specified. I F - Forward Current (ma) CTR Current Transfer Ratio (%) I C - Collector Current (ma) T A = o C 7 o C 25 o C o C -4 o C V F - Forward Voltage (V) Fig. 3 Forward Current vs. Forward Voltage. I F - Forward Current (ma) Fig. 5 Current Transfer Ratio vs. Forward Current (FODM2/27/275). T A = 25 o C V CE = 5V I F = 25mA I F = 5mA I F = ma I F =.5mA V CE = 5V V CE = V I F = ma Fig. 7 Collector Current vs. Ambient Temperature (FODM2/27/275) V CE(sat) - Collector-Emitter Saturation Voltage(V) I C - Collector Current (ma) I C - Collector Current (ma) I F = 8mA I C = 2.4mA I F = ma I C = 2mA Fig. 4 Collector-Emitter Saturation Voltage vs. Ambient Temperature (FODM2/27/275) T A = 25 o C V CE = V V CE = 5V.. I F - Forward Current (ma) Fig. 6 Collector Current vs. Forward Current (FODM2/27/275) T A = 25 o C I F = 2mA I F = 3mA I F = 4mA I F = ma I F = 5mA I F = 5mA I F = ma V CE - Collector-Emitter Voltage (V) Fig. 8 Collector Current vs. Collector-Emitter Voltage (FODM2/27/275) FODM2 Series, FODM24, FODM27, FODM275 Rev..7 5
6 Typical Performance Curves (Continued) T A = 25 C unless otherwise specified. I CEO - Collector Dark Current (na) Switching Time (μs) CTR Current Transfer Ratio (%) V CE = 4V Fig 9. Collector Dark Current vs. Ambient Temperature (FODM2/27/275) R L - Load Resistance (kω) Fig. Switching Time vs. Load Resistance (FODM2/27/275) V CC = 5V T A = 25 o C T A = 25 C V CE =.5V I F = 5mA t OFF t ON I F = 6mA. I F - Forward Current (ma) Fig. 3 Current Transfer Ratio vs. Forward Current (FODM24) t S CTR Normalized Current Transfer Ratio (%) V CE(sat) - Collector-Emitter Saturation Voltage(V) I C - Collector Current (ma) I F = 5mA V CE = 5V Normalized to T A = 25 o C Fig. Normalized Current Transfer Ratio vs. Ambient Temperature (FODM2/27/275) I F = ma I C =.5mA Fig. 2 Collector-Emitter Saturation Voltage vs. Ambient Temperature (FODM24). T A = 25 C V CE =.5V.. I F - Forward Current (ma) Fig 4. Collector Current vs. Forward Current (FODM24) FODM2 Series, FODM24, FODM27, FODM275 Rev..7 6
7 Typical Performance Curves (Continued) T A = 25 C unless otherwise specified. I CEO - Collector Dark Current (na) I C - Collector Current (ma) Fig 5. Collector Current vs. Ambient Temperature (FODM24) V CE =.5V V CE = 4V I F = 5mA I F = 2mA I F = ma I F =.5mA I F = ma Fig. 7 Collector Dark Current vs. Ambient Temperature (FODM24) Switching Time (μs) V CC = 5V I F = ma T A = 25 C CTR Normalized Current Transfer Ratio (%) t OFF I C - Collector Current (ma) T A = 25 o C I F = ma I F = 5mA I F = 2mA I F = ma I F =.5mA V CE - Collector-Emitter Voltage (V) Fig. 6 Collector Current vs. Collector-Emitter Voltage (FODM24) R L - Load Resistance (kω) I F = ma, V CE =.5V t S t ON Fig. 9 Switching Time vs. Load Resistance (FODM24) Normalized to T A = 25 C Fig. 8 Normalized Current Transfer Ratio vs. Ambient Temperature (FODM24) FODM2 Series, FODM24, FODM27, FODM275 Rev..7 7
8 Reflow Profile Temperature ( C) TP TL Tsmax Tsmin Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S Preheat Area 2 Profile Freature Time 25 C to Peak Time (seconds) Pb-Free Assembly Profile Temperature Min. (Tsmin) 5 C Temperature Max. (Tsmax) 2 C Time (t S ) from (Tsmin to Tsmax) 6 2 seconds Ramp-up Rate (t L to t P ) 3 C/second max. Liquidous Temperature (T L ) 27 C Time (t L ) Maintained Above (T L ) 6 5 seconds Peak Body Package Temperature 26 C + C / 5 C Time (t P ) within 5 C of 26 C 3 seconds Ramp-down Rate (T P to T L ) 6 C/second max. Time 25 C to Peak Temperature 8 minutes max. ts tl tp FODM2 Series, FODM24, FODM27, FODM275 Rev..7 8
9 Ordering Information Part Number Package Packing Method FODM2 Full Pitch Mini-Flat 4-Pin Tube ( units) FODM2R2 Full Pitch Mini-Flat 4-Pin Tape and Reel (25 Units) FODM2V Full Pitch Mini-Flat 4-Pin, DIN EN/IEC Option Tube ( Units) FODM2R2V Full Pitch Mini-Flat 4-Pin, DIN EN/IEC Option Tape and Reel (25 Units) Note: The product orderable part number system listed in this table also applies to the FODM2A, FODM2B, FODM2C, FODM24, FODM27, and FODM275 products. Marking Information Table. Top Mark Definitions 3 4 Figure 2. Top Mark Fairchild Logo 2 Device Number 3 DIN EN/IEC Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., 5 5 Digit Work Week, Ranging from to 53 6 Assembly Package Code 5 2 V X YY R 2 6 FODM2 Series, FODM24, FODM27, FODM275 Rev..7 9
10 Carrier Tape Specifications K t W d Tape Width Tape Thickness Sprocket Hole Pitch Sprocket Hole Dia. Sprocket Hole Location Pocket Location Pocket Pitch Pocket Dimension Pocket Hole Dia. Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Devices Per Reel Reel Diameter P 2.54 Pitch Description Symbol Dimensions W t P E F P A B D K D 2 W A P P 2 B P 8.±.2 D 2.±.4.35±.2 4.±.2.55±.2.75±.2 5.5±.2 2.± ±.2 7.3±.2 2.3±.2.55± d.65±.2 2 max mm (3") D F E W FODM2 Series, FODM24, FODM27, FODM275 Rev..7
11
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AccuPower AttitudeEngine Awinda AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid MTi MTx MVN mwsaver OptoHiT OPTOLOGIC OPTOPLANAR Power Supply WebDesigner PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS Xsens 仙童 * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. AUTHORIZED USE Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: () automotive or other transportation, (2) military/aerospace, (3) any safety critical application including life critical medical equipment where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, under Terms of Use Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications may change Advance Information Formative / In Design in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make No Identification Needed Full Production changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I77 Fairchild Semiconductor Corporation
13 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FODM24 FODM24R2 FODM24R2V
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