ETSI TS V ( )

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1 Techical Specificatio Digital cellular telecouicatios syste (hase +); Uiversal Mobile Telecouicatios Syste (UMTS); LTE; User Equipet (UE) / Mobile Statio (MS) Over The Air (OTA) atea perforace; Coforace testig ()

2 Referece RTS/TSGR-05344vb30 Keywords GSM,LTE,UMTS 650 Route des Lucioles F-069 Sophia Atipolis Cedex - FRANCE Tel.: Fax: Siret N NAF 74 C Associatio à but o lucratif eregistrée à la Sous-réfecture de Grasse (06) N 7803/88 Iportat otice Idividual copies of the preset docuet ca be dowloaded fro: The preset docuet ay be ade available i ore tha oe electroic versio or i prit. I ay case of existig or perceived differece i cotets betwee such versios, the referece versio is the ortable Docuet Forat (DF). I case of dispute, the referece shall be the pritig o priters of the DF versio kept o a specific etwork drive withi Secretariat. Users of the preset docuet should be aware that the docuet ay be subject to revisio or chage of status. Iforatio o the curret status of this ad other docuets is available at If you fid errors i the preset docuet, please sed your coet to oe of the followig services: Copyright Notificatio No part ay be reproduced except as authorized by writte perissio. The copyright ad the foregoig restrictio exted to reproductio i all edia. Europea Telecouicatios Stadards Istitute 03. All rights reserved. DECT TM, LUGTESTS TM, UMTS TM ad the logo are Trade Marks of registered for the beefit of its Mebers. 3G TM ad LTE are Trade Marks of registered for the beefit of its Mebers ad of the 3G Orgaizatioal arters. GSM ad the GSM logo are Trade Marks registered ad owed by the GSM Associatio.

3 Itellectual roperty Rights IRs essetial or potetially essetial to the preset docuet ay have bee declared to. The iforatio pertaiig to these essetial IRs, if ay, is publicly available for ebers ad o-ebers, ad ca be foud i SR : "Itellectual roperty Rights (IRs); Essetial, or potetially Essetial, IRs otified to i respect of stadards", which is available fro the Secretariat. Latest updates are available o the Web server ( ursuat to the IR olicy, o ivestigatio, icludig IR searches, has bee carried out by. No guaratee ca be give as to the existece of other IRs ot refereced i SR (or the updates o the Web server) which are, or ay be, or ay becoe, essetial to the preset docuet. Foreword This Techical Specificatio (TS) has bee produced by 3rd Geeratio artership roject (3G). The preset docuet ay refer to techical specificatios or reports usig their 3G idetities, UMTS idetities or GSM idetities. These should be iterpreted as beig refereces to the correspodig deliverables. The cross referece betwee GSM, UMTS, 3G ad idetities ca be foud uder

4 3 Cotets Itellectual roperty Rights... Foreword... Foreword... 9 Scope... 0 Refereces Defiitios, sybols, abbreviatios ad equatios Sybols Abbreviatios... 4 Geeral Measureet frequecies FDD frequecy bads GSM frequecy bads TDD frequecy bads Trasitter erforace Geeral DUT positioig Saplig grid Nuber of idepedet saples (for reverberatio chaber procedure) Total Radiated ower (TR) for FDD UE Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure rocedure, reverberatio chaber ethod Test requireets Total Radiated ower (TR) for GSM MS Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure rocedure, reverberatio chaber ethod Test requireets Total Radiated ower (TR) for TDD UE Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure rocedure, reverberatio chaber ethod Test requireets Total Radiated ower (TR) for FDD UE usig LME Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure rocedure, reverberatio chaber ethod... 9

5 Test requireets Total Radiated ower (TR) for GSM MS usig LME Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure rocedure, reverberatio chaber ethod Test requireets Total Radiated ower (TR) for TDD UE usig LME Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure rocedure, reverberatio chaber ethod Test requireets Total Radiated ower (TR) for FDD UE usig LEE Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure rocedure, reverberatio chaber ethod Test requireets Total Radiated ower (TR) for GSM MS usig LEE Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure rocedure, reverberatio chaber ethod Test requireets Total Radiated ower (TR) for TDD UE usig LEE Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure rocedure, reverberatio chaber ethod Test requireets Receiver erforace Geeral DUT ositioig Saplig grid Nuber of idepedet saples (for reverberatio chaber procedure) Total Radiated Sesitivity (TRS) for FDD UE Defiitio ad applicability Miiu requireets Test urpose Method of test Iitial coditios Test procedure Test procedure, reverberatio chaber ethod Test requireets Total Radiated Sesitivity (TRS) for GSM MS... 55

6 Defiitio ad applicability Miiu requireets Test urpose Method of test Iitial coditios Test procedure Test procedure, reverberatio chaber ethod Test requireets Total Radiated Sesitivity (TRS) for TDD UE Defiitio ad applicability Miiu requireets Test urpose Method of test Iitial coditios Test procedure Test procedure, reverberatio chaber ethod Test requireets Total Radiated Sesitivity (TRS) for FDD UE usig LME Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure Test procedure, reverberatio chaber ethod Test requireets Total Radiated Sesitivity (TRS) for GSM MS usig LME Defiitio ad applicability Miiu requireets Test urpose Method of test Iitial coditios Test procedure Test procedure, reverberatio chaber ethod Test requireets Total Radiated Sesitivity (TRS) for TDD UE usig LME Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure Test procedure, reverberatio chaber ethod Test requireets Total Radiated Sesitivity (TRS) for FDD UE usig LEE Defiitio ad applicability Miiu requireets Test urpose Method of test Iitial coditios Test procedure Test procedure, reverberatio chaber ethod Test requireets Total Radiated Sesitivity (TRS) for GSM MS usig LEE Defiitio ad applicability Miiu requireets Test urpose Method of test Iitial coditios Test procedure Test procedure, reverberatio chaber ethod Test requireets... 8

7 6 6.0 Total Radiated Sesitivity (TRS) for TDD UE usig LEE Defiitio ad applicability Miiu Requireets Test purpose Method of test Iitial coditios rocedure Test procedure, reverberatio chaber ethod Test requireets Aex A (orative): Test syste characterizatio A. hato specificatios A.. Head hato A.. Laptop Groud lae hato A. Aechoic chaber costraits A.. ositioer A.. Measureet Atea A..3 Quiet Zoe A..4 Shieldig effectiveess of the chaber A.3 Reverberatio chaber costraits A.3. ositioig ad ode stirrig facilities... 9 A.3. Measureet Ateas... 9 A.3.3 Chaber size ad characteristics... 9 A.3.4 Shieldig effectiveess of the chaber... 9 A.4 Ebedded Devices... 9 A.4. Notebook... 9 A.4. Tablet Aex B (orative): Calibratio B. Calibratio rocedure B. Calibratio rocedure Reverberatio Chaber Method B.. Measureet of S-paraeters through the chaber for a coplete stirrig sequece B.. Calculatio of the chaber referece trasfer fuctio B..3 Cable calibratio Aex C (orative): Aex D (orative): Measureet Test Report Maxiu ucertaity of Test Syste ad Test Toleraces D. Maxiu ucertaity of Test Syste D. Test toleraces (iforative)... 0 D.3 Derivatio of Test Requireets (iforative) Aex E (orative): Estiatio of Measureet Ucertaity E. Misatch ucertaity betwee easureet receiver ad the probe atea... E. FFS... E.3 Isertio loss of the probe atea cable... E.4 Isertio loss of the probe atea atteuator (if used)... 3 E.5 Isertio loss of the RF relays (if used)... 3 E.6 Ifluece of the atea cable... 3 E.6. robe atea cable... 3 E.6. Calibratio atea cable... 3 E.7 Absolute gai of the probe atea... 3

8 7 E.8 Measureet Receiver: ucertaity of absolute level... 3 E.9 Measureet distace... 3 E.9. Offset of DUT phase cetre fro axis(es) of rotatio... 4 E.9. Mutual couplig... 4 E.9.3 hase curvature... 4 E.0 Quality of quiet zoe... 4 E. Tx-power drift of DUT... 5 E. Ucertaity related to the use of phato... 5 E.. Ucertaity fro usig differet types of SAM phato... 5 E.. Siulated tissue liquid ucertaity... 5 E..3 Device Holder... 5 E..4 Ucertaity of dielectric properties ad shape of the had phato... 6 E..5 Ucertaity fro usig differet types of Laptop Groud lae phato... 6 E.3 Coarse saplig grid... 6 E.4 Rado ucertaity... 7 E.5 Ucertaity of etwork aalyzer... 7 E.6 Ucertaity of the gai/efficiecy of the calibratio atea... 7 E.7 Base statio siulator: ucertaity of the absolute level... 8 E.8 BER easureet: output level step resolutio... 8 E.9 Statistical ucertaity of the BER easureet... 8 E.9. WCDMA... 8 E.9. GSM... 8 E.9.3 TD-SCDMA... 9 E.0 BER oralizatio ucertaity... 9 E. DUT sesitivity drift... 9 E. Cable loss easureet ucertaity... 9 E.3 Sigal geerator: ucertaity of the absolute output level... 0 E.4 Sigal geerator: output level stability... 0 E.5 Isertio loss: Calibratio atea feed cable... 0 E.6 Isertio loss: Calibratio atea atteuator (if used)... 0 E.6.A Chaber Statistical Ripple ad Repeatability... 0 E.6.B Additioal ower Loss i EUT Chassis... E.7 Exaples of ucertaity budget calculatios for TR(Iforative)... E.8 Exaples of ucertaity budget calculatios for TRS(Iforative)... 5 E.9 Exaples of ucertaity budget calculatios for TR, reverberatio chaber ethod (Iforative)... 9 E.30 Exaples of ucertaity budget calculatios for TRS, reverberatio chaber ethod (Iforative)... 3 Aex F (iforative): Aex G (iforative): Suggested Recipes of Liquid to be used iside SAM hato Aechoic Chaber Specificatios ad Validatio Method G. Shielded aechoic chaber specificatios G. Quiet Zoe reflectivity level validatio G.. Descriptio of a practical ethod for Quiet Zoe characterizatio... 35

9 8 G.3 FFS G.4 Stadard deviatio of electric field Aex G.A (iforative): Reverberatio Chaber Specificatios ad Validatio Method G.A. Shielded reverberatio chaber specificatios G.A. Reverberatio chaber statistical ripple ad repeatability validatio Aex H (iforative): Recoeded perforace H. Geeral H. Total Radiated ower H.3 Total Radiated Sesitivity Aex I (iforative): Aex J (iforative): Bibliography Chage history History... 50

10 9 Foreword This Techical Specificatio has bee produced by the 3 rd Geeratio artership roject (3G). The cotets of the preset docuet are subject to cotiuig work withi the TSG ad ay chage followig foral TSG approval. Should the TSG odify the cotets of the preset docuet, it will be re-released by the TSG with a idetifyig chage of release date ad a icrease i versio uber as follows: Versio x.y.z where: x the first digit: preseted to TSG for iforatio; preseted to TSG for approval; 3 or greater idicates TSG approved docuet uder chage cotrol. y the secod digit is icreeted for all chages of substace, i.e. techical ehaceets, correctios, updates, etc. z the third digit is icreeted whe editorial oly chages have bee icorporated i the docuet.

11 0 Scope The preset docuet describes the test procedure for the radiated perforaces easureets of the 3G/G user equipet/obile statios (UE/MS) i active ode i both the uplik ad the dowlik. The FDD UE test procedure is based o the test ethod developed as a result of COST 73 Sub-Workig Group (SWG). ebers cotributios. Backgroud work has also bee ade i the forer COST59 project. The TDD UE test procedure is based o the test ethod developed as a result of CCSA TC9 WG ebers cotributios. Backgroud work has bee ade i the forer CCSA TC9 project. The easureet procedure explaied i this docuet applies to UE/MS used uder the speech ode coditios that correspod to predefied positios for voice applicatio whe the hadset is held close to the user s head. This ethod is also applicable to free space easureets for UE/MS devices. The data trasfer positio (free space) explaied i this docuet applies whe the UE is used away fro the user s head. For LME ad LEE devices free space cofiguratio without head ad had phatos is applicable. Free space easureets are applicable to devices used i the data trasfer positio that cosist of the laptop outed equipet (LME) plug-i UEs ad laptop ebedded equipet (LEE) UEs. The tests apply to UEs ad laptops usig sigle or ultiple receive ateas. For GSM techology this is applicable to all MSs ad for 3G techology this is applicable to oe atea UEs ad RxDiversity UEs. The testig ethodology applies to ay sigle or ulti-ode (GSM / UMTS / TD-SCDMA) terials. The radio tests cosidered here are:. The easureet of the Total Radiated ower (TR). The easureet of the Total Radiated Sesitivity (TRS) The test procedure described i this docuet easures the perforace of the trasitter ad the receiver, icludig the atea ad also the effects of the user. The ajor parts of this test procedure are based o the 3-D patter easureet ethod. It has bee cosidered ecessary to defie soe ites ad copoets i the test procedure i detail, such as test chaels ad phato setups, i order to ake the testig i differet laboratories haroized. The procedure is, however, ot liited to soe specific atea chabers or positioers. Refereces The followig docuets cotai provisios which, through referece i this text, costitute provisios of the preset docuet. Refereces are either specific (idetified by date of publicatio, editio uber, versio uber, etc.) or o-specific. For a specific referece, subsequet revisios do ot apply. For a o-specific referece, the latest versio applies. I the case of a referece to a 3G docuet (icludig a GSM docuet), a o-specific referece iplicitly refers to the latest versio of that docuet i the sae Release as the preset docuet. [] 3G TR 5.94 Techical Specificatio 3rd Geeratio artership roject; Techical Specificatio Group Radio Access Networks; Measureets of Radio erforaces for UMTS Terials i Speech Mode [] 3G TS 5.0 Techical Specificatio 3rd Geeratio artership roject; Techical Specificatio Group Radio Access Networks; User Equipet (UE) radio trasissio ad receptio (FDD) [3] 3G 34., 3rd Geeratio artership roject; Techical Specificatio Group Terials; Terial coforace specificatio; Radio trasissio ad receptio (FDD)

12 [4] TR 00 08, aragraph D..3.6 [5] TR [6] TR [7] 3G TR.905 "Vocabulary for 3G Specificatios" [8] 3G TR "Vocabulary" [9] 3G TS " Mobile Statio (MS) coforace specificatio; art : Coforace specificatio " [0] 3G TS "Coo Test Eviroets for User Equipet (UE) Coforace Testig". [] 3G TS "Terial logical test iterface; Special coforace testig fuctios [] 3G TS 5.44 "User Equipet (UE) ad Mobile Statio (MS) over the air perforace requireets" [3] 3G TS 34. " Terial coforace specificatio; Radio trasissio ad receptio (TDD) " 3 Defiitios, sybols, abbreviatios ad equatios For the purposes of the preset docuet, the ters ad defiitios give i 3G TR.905 [7], 3G TR [8] ad the followig apply: 3. Sybols For the purposes of the preset docuet, the followig sybols apply: θ φ Ω G ψ (θ,φ,f) F tr Q ψ (θ,φ,f) db db kbps s MHz Zeith agle i the spherical co-ordiate syste Aziuth agle i the spherical co-ordiate syste Solid agle defied at the phase cetre of the DUT Atea gai patter i the ψ-polarizatio as fuctio of the spherical co-ordiates ad the carrier frequecy Carrier frequecy Trasitted power Agular power distributio i the ψ-polarizatio as fuctio of the spherical co-ordiates ad the carrier frequecy decibel db refereced to oe illiwatt eter illieter kilobit per secod illisecod egahertz 3. Abbreviatios For the purposes of the preset docuet, the followig abbreviatios apply: 3G 3 rd Geeratio 3G 3G artership roject 3-D Three Diesioal AAU Aalborg Uiversity AD Agular ower Distributio ARFCN Absolute Radio Frequecy Chael Nuber BER Bit Error Ratio BS Base Statio

13 BT CN CICH RSC CRC DCH DL DCH DDCH DCCH DTCH DUT EIR EIS FDD FS GS GSM HUT LEE LME MS NB NSA OTA QoS QSK RAB RB RAN RBW RF RMS Rx SAM SS TDD TFCI Tx TR TRS USB UTRA XD XR UD UL UE UMTS VBW Bluetooth Core Network Coo ilot Chael Received Sigal Code ower Cyclic Redudacy Check Dedicated Chael Dowlik Dedicated hysical Chael Dedicated hysical Data Chael hysical Cotrol Chael Dedicated Traffic Chael Device Uder Test Effective Isotropic Radiated ower Effective Isotropic Sesitivity Europea Telecouicatios Stadards Istitute Frequecy Divisio Duplex Free Space Global ositioig Syste Global Syste for Mobile couicatios Helsiki Uiversity of Techology Laptop Ebedded Equipet (e.g. ebedded odule card ebedded i otebooks) Laptop Mouted Equipet (e.g., plug-i devices like USB dogles) Mobile Statio Node B Noralised Site Atteuatio Over The Air Quality of Service Quadrature hase Shift Keyig (odulatio) Radio Access Bearer Radio Bearer Radio Access Network Resolutio Badwidth Radio Frequecy Root Mea Square Receiver Specific Athropoorphic Maequi Syste Siulator Tie Divisio Duplex Trasport Forat Cobiatio Idicator Trasitter Total Radiated ower Total Radiated Sesitivity (also: Total Isotropic Sesitivity) Uiversal Serial Bus UMTS Terrestrial Radio Access Cross-olar Discriiatio of the atea Cross-olarizatio ratio of the chael User Datagra rotocol Uplik User Equipet Uiversal Mobile Telecouicatios Syste Video Badwidth 4 Geeral The preset docuet describes test procedure for the radiated perforaces easureets of the 3G/G user equipet/obile statios (UE/MS) i active ode i both the up- ad the dowlik. The test procedure is based o 3G TR 5.94 [].

14 3 4. Measureet frequecies The radiatio patters of hadset ateas ca be expected to be frequecy depedet, both i the size ad, to saller extet, i the shape of the patter. TR ad TRS shall be easured i 3 chaels i a frequecy bad, i.e. low, id ad high chaels. 4.. FDD frequecy bads UTRA/FDD is desiged to operate i the followig paired bads: Operatig Bad Table 4.: UTRA FDD frequecy bads UL Frequecies UE trasit, Node B receive DL frequecies UE receive, Node B trasit I MHz 0 70 MHz II MHz MHz III MHz MHz IV MHz 0-55 MHz V MHz MHz VI MHz MHz VII MHz MHz VIII MHz MHz IX MHz MHz X MHz 0 70 MHz XIX MHz MHz Operatig Bad Table 4.: UTRA FDD Chaels UL Chaels DL Chaels Low Mid High Low Mid High I II III IV V VI VII VIII IX X XIX NOTE: Deployet i other frequecy bads is ot precluded.

15 4 4.. GSM frequecy bads Operatig Bad Table 4.3: GSM frequecy bads UL Frequecies MS trasit, BTS receive DL frequecies MS receive, BTS trasit GSM MHz MHz -GSM MHz MHz E-GSM MHz MHz DCS MHz MHz CS MHz MHz Operatig Bad Table 4.4: GSM Chaels Chaels Low Mid High GSM GSM E-GSM DCS CS TDD frequecy bads UTRA/TDD is desiged to operate i the followig bads: Table 4.5: UTRA TDD frequecy bads Operatig Bad Frequecies a MHz MHz MHz b* MHz c* MHz d** MHz e MHz f MHz NOTE: Deployet i other frequecy bads is ot precluded. * Used i ITU Regio ** Used i ITU Regio

16 5 Table 4.6: UTRA TDD Chaels Operatig Bad a MHz MHz b MHz Chaels Low Mid High MHz c MHz d MHz e MHz f MHz Trasitter erforace 5. Geeral This sectio specifies the test ethod ad test requireets for the radiated power easureet. There are two ethods described. The ai ethod is based o a aechoic chaber approach ad the alterative ethod is based o a reverberatio chaber approach. 5.. DUT positioig The DUT positioig o head phato eas that the easureets are perfored so that the DUT is placed agaist a SAM phato. The characteristics of the SAM phato are specified i Aex A... The DUT is attached to the SAM phato i cheek positio as defied i IEEE Std 58. The DUT perforace is easured o left ad right side of the head. The DUT positioig o laptop groud plae phato eas that a laptop groud plae phato is used for radiated perforace easureets i case of plug-i DUT like USB dogles that is used away fro the user s head. The DUT is coected to the USB coector of the laptop groud plae phato. The characteristics of the laptop groud plae phato are specified i Aex A... The objective of the laptop groud plae phato is to reproduce the effects of the groud plae for the atea of the DUT while avoidig the variatio of the easureets itroduced by a real laptop. The DUT shall be plugged ito the USB coector ad positioed i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio the DUT with either the rotary USB porter or o-rotary USB porter should be horizotally plugged ito the horizotal USB coector. The DUT positioig i a free space cofiguratio without head ad had phatos as specified i Aex A.4 is used for radiated perforace easureets i case of ebedded odule card that is used away fro the user s head. 5.. Saplig grid A 5 -saple grid i both aziuth ad elevatio ca be cosidered sufficiet for accurate easureets. Geerally it ca be said that sice the radiatig object has a liited size the gai patter caot chage arbitrarily versus agle, ad therefore oly a liited uber of saples are required to represet the gai patter to a give accuracy. Alteratively, differet saplig patters ay be used, if they are able to esure sae or greater accuracy. The TR ca be calculated by iterpolatig the values to poits o the regular grid. If a alterative saplig patter is used uber of easureet poits should be greater tha i the regular saplig grid.

17 Nuber of idepedet saples (for reverberatio chaber procedure) Whe easurig the TR i a isotropic Rayleigh fadig eviroet, 00 idepedet saples ca be cosidered sufficiet for esurig a expaded accuracy better tha 0.5 db. 5. Total Radiated ower (TR) for FDD UE 5.. Defiitio ad applicability The Total Radiated ower (TR) is a easure of how uch power the DUT actually radiates. The TR is defied as the itegral of the power trasitted i differet directios over the etire radiatio sphere: ( EIR ( Ω; f ) + EIR ( Ω; f ) Ω TR = θ ϕ ) d 4π Where Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. EIR θ ad Thus EIR ϕ are the actually trasitted power-levels i correspodig polarizatios. TR π NM N M [ EIRθ ( θ, ϕ; f ) + EIRϕ ( θ, ϕ; f )] si( θ) = 0 = 0 I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 5... θ ad ϕ are the easureet The TR ca also be calculated fro Rayleigh faded saples of the total power trasitted fro the UE/MS. The easureet of trasitter perforace i a isotropic Rayleigh fadig eviroet is based o saplig the radiated power of the UE/MS for a discrete uber of field cobiatios i the chaber. The average value of these statistically distributed saples is proportioal to the TR ad by calibratig the average power trasfer fuctio, a absolute value of the TR ca be obtaied. Thus TR N = C N = ( R ) ref, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.. is the average power easured by fixed easureet atea ad ca be calculated usig the followig expressio: = M = S,, M S,, where is saple uber of the coplex trasfer fuctio easured with fixed easureet atea ad M is the total uber of saples easured for each fixed easureet atea. Note that all averagig ust be perfored usig liear power values (e.g. easureets i Watts).

18 7 The requireets ad this test apply to all types of UTRA for the FDD UE for Release 7 ad later releases. 5.. Miiu Requireets The average TR of low, id ad high chael i beside head positio shall be higher tha iiu perforace requireets for roaig bads show i Table 5... The averagig shall be doe i liear scale for the TR results of both right ad left side of the phato head. TR average left _ low 0 left _ id /0 left _ high /0 right _ low /0 right _ id / = 0log 6 / right _ high /0 I additio the iiu TR of each easured chael i beside head positio shall be higher tha iiu perforace requireets show i the colus Mi. TR [,,,, ] i = i left _ low left _ id left _ high right _ low right _ id, right _ high Table 5.. TR iiu perforace requireet for FDD roaig bads i the speech positio ad the priary echaical ode Operatig bad ower Class ower (db) ower Class ower (db) ower Class 3 ower Class 3bis ower Class 4 ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi I II III IV V VI VII VIII IX XIX NOTE: Applicable for dual-ode GSM/UMTS. The orative referece for this clause is TS5.44 sectio Test purpose The purpose of this test is to verify that TR average ad TRi of the UE is ot below specified values. A lower TR average ad TRi decrease the coverage area Method of test Iitial coditios The output power is a easure of the axiu power the UE ca trasit i a badwidth of at least (+ α) ties the chip rate of the radio access ode, for ore iforatio see 3G TS 34. chapter 5.. The period of easureet shall be at least oe tieslot. Also care should be take that the oise floor of the easureet receiver is ot disturbig the power easureet. Test eviroet: oral; see TS34.- [3] clause G... Frequecies to be tested: low rage, id rage, high rage; see TS34.- [3] clause G..4.

19 8 ) Set the SS dowlik physical chaels accordig to settigs i Table 5... Set the DCH power such that there will ot be trasissio gaps due to too low sigal stregth throughout the easureet. ) ower o the UE. 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. Copressed ode shall be set to OFF. 4) Eter the UE ito loopback test ode ad start the loopback test. See TS [0] ad TS [] for details regardig geeric call setup procedure ad loopback test. Table 5..: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower CICH CICH_Ec / DCH_Ec = 7 db -CCCH -CCCH_Ec / DCH_Ec = 5 db SCH SCH_Ec / DCH_Ec = 5 db ICH ICH_Ec / DCH_Ec = db DCH Test depedet power rocedure ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio the UE agaist the SAM phato EIR ad EIR ϕ with a saple step of 5 i theta (θ) ad phi (φ) directios usig a test syste havig characteristics as described i Aex A. 4) Measure the θ 5) Calculate TR usig equatios fro chapter 5.. NOTE : The easureet procedure is based o the easureet of the spherical radiatio patter of the DUT. The power radiated by the DUT is sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIR saples are take usig a costat saple step of 5 both i theta (θ) ad phi (φ) directios. I soe cases a differet saplig grid ay be used to speed up the easureets (See Sectio 5..). All the EIR saples are take with two orthogoal polarizatios, θ - ad ϕ - polarisatios. NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet. NOTE 3: No Stadard settigs: To speed up sesitivity easureets, power easureets ay be doe with o stadard odulatio. However to obtai TR result the easured EIR figures shall be oralized by ΔEIR = ( EIRstd i EIRstd i ) i= where EIRstd i is power easureet doe with stadard settig. o stadard odulatio. is aout of referece easureet poits. EIRstd i is power easureet doe with To esure accuracy of TR, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie rocedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter.

20 9 3) ositio the UE agaist the SAM phato 4) Measure a sufficiet uber of idepedet saples (see sectio 5..3) of, usig a test syste havig characteristics as described i Aex A. 5) Calculate TR usig equatios fro sectio 5... NOTE : The easureet procedure is based o the easureet of the total power radiated fro the UE/MS to a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power trasitted by the DUT is udergoig Rayleigh fadig ad is sapled by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TR value. S, NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet Test requireets The average TR of low, id ad high chael i beside head positio shall be higher tha test perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results of both right ad left side of the phato head. TR average left _ low 0 left _ id /0 left _ high /0 right _ low /0 right _ id / = 0log 6 / right _ high /0 I additio the iiu TR of each easured chael i beside head positio shall be higher tha iiu perforace requireets show i the colus Mi. TR [,,,, ] i = i left _ low left _ id left _ high right _ low right _ id, right _ high Table 5..3 TR test requireet for FDD roaig bads i the speech positio ad the priary echaical ode Operatig bad ower Class ower (db) ower Class ower (db) ower Class 3 ower Class 3bis ower Class 4 ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi I II III IV V VI VII VIII IX XIX NOTE: Applicable for dual-ode GSM/UMTS. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 5.3 Total Radiated ower (TR) for GSM MS 5.3. Defiitio ad applicability The Total Radiated ower (TR) is a easure of how uch power the DUT actually radiates. The TR is defied as the itegral of the power trasitted i differet directios over the etire radiatio sphere:

21 0 ( EIR ( Ω; f ) + EIR ( Ω; f ) Ω TR = θ ϕ ) d 4π Where Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. EIR θ ad Thus EIR ϕ are the actually trasitted power-levels i correspodig polarizatios. TR π NM N M [ EIRθ ( θ, ϕ; f ) + EIRϕ ( θ, ϕ; f )] si( θ) = 0 = 0 I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 5... θ ad ϕ are the easureet The TR ca also be calculated fro Rayleigh faded saples of the total power trasitted fro the UE/MS. The easureet of trasitter perforace i a isotropic Rayleigh fadig eviroet is based o saplig the radiated power of the UE/MS for a discrete uber of field cobiatios i the chaber. The average value of these statistically distributed saples is proportioal to the TR ad by calibratig the average power trasfer fuctio, a absolute value of the TR ca be obtaied. Thus TR N = C N = ( R ) ref, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.. is the average power easured by fixed easureet atea ad ca be calculated usig the followig expressio: = M = S,, M S,, where is saple uber of the coplex trasfer fuctio easured with fixed easureet atea ad M is the total uber of saples easured for each fixed easureet atea. The requireets ad this test apply to all types of MS that support GSM for Release 7 ad later releases Miiu Requireets The average TR of low, id ad high chael i beside head positio shall be higher tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results of both right ad left side of the phato head. TR average left _ low 0 left _ id /0 left _ high /0 right _ low /0 right _ id / = 0log 6 / right _ high /0 I additio the iiu TR of each easured chael i beside head positio shall be higher tha iiu perforace requireets show i the colus Mi.

22 TR [,,,, ] i = i left _ low left _ id left _ high right _ low right _ id, right _ high Table 5.3.: TR iiu requireet for GSM roaig bads i the speech positio ad the priary echaical ode Operatig bad ower Class ower Class ower Class 3 ower Class 4 ower Class 5 ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi Average Mi GSM GSM DCS CS Note: applicable for dual-ode GSM/UMTS. The orative referece for this clause is TS5.44 sectio Test purpose The purpose of this test is to verify that TR average ad TR i of the MS is ot below specified values. A lower TR average ad TRi decrease the coverage area Method of test Iitial coditios A call is set up by the SS accordig to the geeric call set up procedure o a chael with ARFCN i the Mid ARFCN rage, power cotrol level set to Max power. MS TXWR_MAX_CCH is set to the axiu value supported by the ower Class of the Mobile uder test. The SS seds Stadard Test Sigal C; see TS5.00- [9] Aex A5.. The dowlik power is set such that there will ot be trasissio gaps due to too low sigal stregth throughout the easureet Test eviroet: oral coditio; see TS5.00- [9] Aex A rocedure ) ositio the MS agaist the SAM phato EIR ad EIR ϕ with a saple step of 5 i theta (θ) ad phi (φ) directios usig a test syste havig characteristics as described i Aex A. ) Measure the θ 3) Calculate TR usig equatios fro chapter ) Test steps to 3 is repeated for ARFCN i the low ad high rage NOTE : Measureet of oral burst trasitter output power. The SS takes power easureet saples evely distributed over the duratio of oe burst with a saplig rate of at least /T, where T is the bit duratio. The saples are idetified i tie with respect to the odulatio o the burst. The SS idetifies the cetre of the useful 47 trasitted bits, i.e. the trasitio fro bit 3 to bit 4 of the idable, as the tiig referece

23 NOTE : The easureet procedure is based o the easureet of the spherical radiatio patter of the DUT. The power radiated by the DUT is sapled i far field i a group of poits located o a closed surface eclosig the DUT. The EIR saples are take usig a costat saple step of 5 both i theta (θ) ad phi (φ) directios. I soe cases a differet saplig grid ca be used to speed up the easureets (See Sectio 5..). All the EIR saples are take with two orthogoal polarizatios, θ - ad ϕ - polarisatios. NOTE 3: The oise floor of the easureet receiver shall ot disturb the power easureet. NOTE 4: No Stadard settigs: To speed up sesitivity easureets, power easureets ca be doe with o stadard odulatio. However to obtai TR result the easured EIR figures shall be oralized by ΔEIR = ( EIRstd i EIRstd i ) i= where EIRstd i is power easureet doe with stadard settig. o stadard odulatio. is aout of referece easureet poits. EIRstd i is power easureet doe with To esure accuracy of TR, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie rocedure, reverberatio chaber ethod ) ositio the UE agaist the SAM phato ) Measure a sufficiet uber of idepedet saples (see sectio 5..3) of, usig a test syste havig the characteristics described i Aex A. 3) Calculate TR usig equatios fro sectio ) Test steps to 3 is repeated for ARFCN i the low ad high rage NOTE : Measureet of oral burst trasitter output power. The SS takes power easureet saples evely distributed over the duratio of oe burst with a saplig rate of at least /T, where T is the bit duratio. The saples are idetified i tie with respect to the odulatio o the burst. The SS idetifies the cetre of the useful 47 trasitted bits, i.e. the trasitio fro bit 3 to bit 4 of the idable, as the tiig referece NOTE : The easureet procedure is based o the easureet of the total power radiated fro the UE/MS to a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power trasitted by the DUT is udergoig Rayleigh fadig ad is sapled by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TR value. S, NOTE 3: The oise floor of the easureet receiver shall ot disturb the power easureet Test requireets The average TR of low, id ad high chael i beside head positio shall be higher tha test perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results of both right ad left side of the phato head. TR average left _ low 0 left _ id /0 left _ high /0 right _ low /0 right _ id / = 0log 6 / right _ high /0 I additio the iiu TR of each easured chael i beside head positio shall be higher tha iiu perforace requireets show i the colus Mi. TR [,,,, ] i = i left _ low left _ id left _ high right _ low right _ id, right _ high

24 3 Table 5.3.: TR test requireet for GSM roaig bads i the speech positio ad the priary echaical ode Operatig bad ower Class ower Class ower Class 3 ower Class 4 ower Class 5 ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi Average Mi GSM GSM E-GSM DCS CS Note : Applicable for dual-ode GSM/UMTS. Note : The test requireets for E-GSM 900 ad -GSM 900 are specified fro GSM 900 iiu requireets i table NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 5.4 Total Radiated ower (TR) for TDD UE 5.4. Defiitio ad applicability The Total Radiated ower (TR) is a easure of how uch power the DUT actually radiates. The TR is defied as the itegral of the power trasitted i differet directios over the etire radiatio sphere: TR = ( EIRθ ( Ω; f ) + EIRϕ ( Ω; f )) dω 4π Where is the solid agle describig the directio, f is frequecy. θ adϕ are the orthogoal polarizatios. EIRθ ad Thus EIRϕ are the actually trasitted power-levels i correspodig polarizatios. TR π NM N M [ EIRθ ( θ, ϕ; f ) + EIRϕ ( θ, ϕ; f )] si( θ) = 0 = 0 I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 5... θ adϕ are the easureet The TR ca also be calculated fro Rayleigh faded saples of the total power trasitted fro the UE/MS. The easureet of trasitter perforace i a isotropic Rayleigh fadig eviroet is based o saplig the radiated power of the UE/MS for a discrete uber of field cobiatios i the chaber. The average value of these statistically distributed saples is proportioal to the TR ad by calibratig the average power trasfer fuctio, a absolute value of the TR ca be obtaied. Thus TR N = C N = ( R ) ref, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i

25 4 Aex B.. is the average power easured by fixed easureet atea ad ca be calculated usig the followig expressio: = M = S,, M S,, where is saple uber of the coplex trasfer fuctio easured with fixed easureet atea ad M is the total uber of saples easured for each fixed easureet atea. The requireets ad this test apply to all types of UTRA for the TDD UE for Release 8 ad later releases Miiu Requireets The average TR of low, id ad high chael i beside head positio shall be higher tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results of both right ad left side of the phato head. TR average left _ low 0 left _ id /0 left _ high /0 right _ low /0 right _ id / = 0log 6 / right _ high /0 I additio the iiu TR of each easured chael i beside head positio shall be higher tha iiu perforace requireets show i the colus Mi. TR [,,,, ] i = i left _ low left _ id left _ high right _ low right _ id, right _ high Table 5.4.: TR iiu perforace requireet for UTRA LCR TDD roaig bads i the speech positio ad the priary echaical ode Operati g bad Note: ower Class ower Class ower Class 3 ower Class 4 ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi a b TBD TBD c TBD TBD d TBD TBD e f Applicable for dual-ode GSM/UTRA LCR TDD. The orative referece for this clause is TS 5.44 sectio Test purpose The purpose of this test is to verify that TRaverage ad TRi of the UE are ot below specified values. A lower TR average ad TR i decrease the coverage area.

26 Method of test Iitial coditios The output power is a easure of the axiu power the UE ca trasit i a badwidth of at least (+ α) ties the chip rate of the radio access ode, for ore iforatio see 3G TS 34. chapter 5.. The period of easureet shall be at least oe tieslot. Also care should be take that the oise floor of the easureet receiver is ot disturbig the power easureet. Norally, the receivig device should be set accordigly so that the receivig sigal will be at least 30dB higher tha the syste oise floor. Test eviroet: oral; see 3G TS34.- [3] clause G... Frequecies to be tested: low rage, id rage, high rage; see TS34.- [3] clause G..4. ) Set the SS dowlik physical chaels paraeters. Set the DCH power such that there will ot be trasissio gaps due to too low sigal stregth throughout the easureet. ) ower o the UE. 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. 4) Eter the UE ito loopback test ode ad start the loopback test. 5) The easureet receiver shall be set to: zero spa, video trigger ad RMS detector. The RBW shall be at least (+ α) ties the chip rate of the radio access ode ad the VBW at least 3 ties bigger tha the RBW. For.8Mcps TDD UE, the RBW shall be set to 3MHz, ad VBW shall be set to 0MHz. See TS [0] ad TS [] for details regardig geeric call setup procedure ad loopback test rocedure ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio the UE agaist the SAM phato. 4) Measure the EIR ad EIR with a saple step of 5 i theta ( ) ad phi ( ) directios usig a test syste havig characteristics as described i Aex A. 5) Calculate TR usig equatios fro chapter NOTE : The easureet procedure is based o the easureet of the spherical radiatio patter of the DUT. The power radiated by the DUT is sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIR saples are take usig a costat saple step of 5 both i theta ( ) ad phi ( ) directios. I soe cases a differet saplig grid ay be used to speed up the easureets (See Sectio 5..). All the EIR saples are take with two orthogoal polarizatios, - ad - polarizatios. NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet. NOTE 3: No Stadard settigs: To speed up sesitivity easureets, power easureets ay be doe with o stadard odulatio. However to obtai TR result the easured EIR figures shall be oralized by ΔEIR = ( EIRstd i EIRstd i ) i= where i EIRstd i is power easureet doe with stadard settig. EIRstd i is power easureet doe with o stadard odulatio. is aout of referece easureet poits.

27 6 To esure accuracy of TR, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie rocedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio the UE agaist the SAM phato 4) Measure a sufficiet uber of idepedet saples (see sectio 5..3) of, usig a test syste havig the characteristics described i Aex A. 5) Calculate TR usig equatios fro sectio NOTE : The easureet procedure is based o the easureet of the total power radiated fro the UE/MS to a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power trasitted by the DUT is udergoig Rayleigh fadig ad is sapled by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TR value. S, NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet Test requireets The average TR of low, id ad high chael i beside head positio shall be higher tha test perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results of both right ad left side of the phato head. TR average left _ low 0 left _ id /0 left _ high /0 right _ low /0 right _ id / = 0log 6 / right _ high /0 I additio the iiu TR of each easured chael i beside head positio shall be higher tha iiu perforace requireets show i the colus Mi. TR [,,,, ] i = i left _ low left _ id left _ high right _ low right _ id, right _ high Table 5.4.: TR test perforace requireet for UTRA LCR TDD roaig bads i the speech positio ad the priary echaical ode Operati g bad Note: ower Class ower Class ower Class 3 ower Class 4 ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi a b TBD TBD c TBD TBD d TBD TBD e f Applicable for dual-ode GSM/UTRA LCR TDD. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D.

28 7 5.5 Total Radiated ower (TR) for FDD UE usig LME Editor s ote: This test case is icoplete. The followig aspects are either issig or ot yet deteried: The TR Miiu erforace Requireet for this test are udefied The Test Requireets ad related Test Toleraces applicable for this test are udefied 5.5. Defiitio ad applicability The Total Radiated ower (TR) is a easure of how uch power the DUT actually radiates. The TR is defied as the itegral of the power trasitted i differet directios over the etire radiatio sphere: ( EIR ( Ω; f ) + EIR ( Ω; f ) Ω TR = θ ϕ ) d 4π Where Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. EIR θ ad Thus EIR ϕ are the actually trasitted power-levels i correspodig polarizatios. TR π NM N M [ EIRθ ( θ, ϕ; f ) + EIRϕ ( θ, ϕ; f )] si( θ) = 0 = 0 I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 5... θ ad ϕ are the easureet The TR ca also be calculated fro Rayleigh faded saples of the total power trasitted fro the LME. The easureet of trasitter perforace i a isotropic Rayleigh fadig eviroet is based o saplig the radiated power of the LME for a discrete uber of field cobiatios i the chaber. The average value of these statistically distributed saples is proportioal to the TR ad by calibratig the average power trasfer fuctio, a absolute value of the TR ca be obtaied. Thus TR N = C N = ( R ) ref, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.. is the average power easured by fixed easureet atea ad ca be calculated usig the followig expressio: = M = S,, M S,, where is saple uber of the coplex trasfer fuctio easured with fixed easureet atea ad M is the total uber of saples easured for each fixed easureet atea. The requireets ad this test apply to all types of UTRA for the FDD UE for Release ad later releases that support LME. NOTE: This test case ca be optioally executed for Release 7 ad oward UE s supportig LME feature.

29 Miiu Requireets The average TR of low, id ad high chael shall be higher tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results. TR average low 0 id / = 0 log 3 / high /0 I additio the iiu TR of each easured chael shall be higher tha iiu perforace requireets show i the colus Mi. TR = /0 low /0 /0 id high [ (,0, )] i 0 log i 0 0 Table 5.5.: TR iiu perforace requireet for FDD LME devices i the data trasfers positio Operatig bad ower Class ower Class ower Class 3 ower Class 3bis ower Class 4 ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi I - - TBD TBD TBD TBD TBD TBD II - - TBD TBD TBD TBD TBD TBD III - - TBD TBD TBD TBD TBD TBD IV - - TBD TBD TBD TBD TBD TBD V - - TBD TBD TBD TBD TBD TBD VI - - TBD TBD TBD TBD TBD TBD VII - - TBD TBD TBD TBD TBD TBD VIII - - TBD TBD TBD TBD TBD TBD IX - - TBD TBD TBD TBD TBD TBD XIX - - TBD TBD TBD TBD TBD TBD NOTE : Applicable for dual-ode GSM/UMTS. NOTE : Applicable for USB plug-i devices. The orative referece for this clause is TS5.44 [] sectio Test purpose The purpose of this test is to verify that TR average ad TRi of the UE is ot below specified values. A lower TR average ad TRi decrease the coverage area Method of test Iitial coditios The output power is a easure of the axiu power the UE ca trasit i a badwidth of at least (+ α) ties the chip rate of the radio access ode, for ore iforatio see TS 34.- [3] clause 5.. The period of easureet shall be at least oe tieslot. Also care should be take that the oise floor of the easureet receiver is ot disturbig the power easureet. Test eviroet: oral; see TS 34.- [3] clause G... Frequecies to be tested: low rage, id rage, high rage; see TS 34.- [3] clause G..4. ) Set the SS dowlik physical chaels accordig to settigs i Table Set the DCH power such that there will ot be trasissio gaps due to too low sigal stregth throughout the easureet. ) Coect the plug-i UE to a laptop groud plae phato. ower o the plug-i UE. The real fuctioal laptop supplies power to the plug-i UE.

30 9 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. Copressed ode shall be set to OFF. 4) Eter the UE ito loopback test ode ad start the loopback test. See TS [0] ad TS [] for details regardig geeric call setup procedure ad loopback test. Table 5.5.: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower CICH CICH_Ec / DCH_Ec = 7 db -CCCH -CCCH_Ec / DCH_Ec = 5 db SCH SCH_Ec / DCH_Ec = 5 db ICH ICH_Ec / DCH_Ec = db DCH Test depedet power rocedure ) Sed cotiuously Up power cotrol coads to the plug-i UE. ) As the plug-i UE reaches axiu power, start sedig N5 data patter. 3) ositio the plug-i UE ito the USB coector i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio positio the plug-i UE so that it is horizotally plugged ito the horizotal USB coector. EIR ad 4) Measure the θ EIR ϕ with a saple step of 5 i theta (θ) ad phi (φ) directios usig a test syste havig characteristics as described i Aex A. 5) Calculate TR usig equatios fro clause 5.5. NOTE : The easureet procedure is based o the easureet of the spherical radiatio patter of the DUT. The power radiated by the DUT is sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIR saples are take usig a costat saple step of 5 both i theta (θ) ad phi (φ) directios. I soe cases a differet saplig grid ay be used to speed up the easureets (See Sectio 5..). All the EIR saples are take with two orthogoal polarizatios, θ - ad ϕ - polarisatios. NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet. NOTE 3: No Stadard settigs: To speed up sesitivity easureets, power easureets ay be doe with o stadard odulatio. However to obtai TR result the easured EIR figures shall be oralized by ΔEIR = ( EIRstd i EIRstd i ) i= where EIRstd i is power easureet doe with stadard settig. o stadard odulatio. is aout of referece easureet poits. EIRstd i is power easureet doe with To esure accuracy of TR, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie rocedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the plug-i UE. ) As the plug-i UE reaches axiu power, start sedig N5 data patter.

31 30 3) ositio the plug-i UE ito the USB coector i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio positio the plug-i UE so that it is horizotally plugged ito the horizotal USB coector. 4) Measure a sufficiet uber of idepedet saples (see sectio 5..3) of, usig a test syste havig characteristics as described i Aex A. 5) Calculate TR usig equatios fro clause NOTE : The easureet procedure is based o the easureet of the total power radiated fro the UE/MS to a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power trasitted by the DUT is udergoig Rayleigh fadig ad is sapled by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TR value. S, NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet Test requireets The average TR of low, id ad high chael shall be higher tha test perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR. TR average low 0 id / = 0 log 3 / high /0 I additio the iiu TR of each easured chael shall be higher tha iiu perforace requireets show i the colus Mi. TR = /0 low /0 /0 id high [ (,0, )] i 0 log i 0 0 Table 5.5.3: TR test requireet for FDD LME devices i the data trasfers positio Operatig ower Class ower Class ower Class 3 ower Class 3bis ower Class 4 bad ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi I - - TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT II - - TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT III - - TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT IV - - TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT V - - TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT VI - - TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT VII - - TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT VIII - - TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT TBD +TT IX - - TBD +TT TBD TBD +TT TBD TBD +TT TBD +TT XIX - - TBD +TT TBD +TT NOTE : Applicable for dual-ode GSM/UMTS. NOTE : Applicable for USB plug-i devices. TBD +TT +TT TBD +TT TBD +TT +TT TBD +TT NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D.

32 3 5.6 Total Radiated ower (TR) for GSM MS usig LME Editor s ote: This test case is ot copleted Miiu Requireets are issig Test requireets ad related TT are issig 5.6. Defiitio ad applicability The Total Radiated ower (TR) is a easure of how uch power the DUT actually radiates. The TR is defied as the itegral of the power trasitted i differet directios over the etire radiatio sphere: ( EIR ( Ω; f ) + EIR ( Ω; f ) Ω TR = θ ϕ ) d 4π Where Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. EIR θ ad Thus EIR ϕ are the actually trasitted power-levels i correspodig polarizatios. TR π NM N M [ EIRθ ( θ, ϕ; f ) + EIRϕ ( θ, ϕ; f )] si( θ) = 0 = 0 I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 5... θ ad ϕ are the easureet The TR ca also be calculated fro Rayleigh faded saples of the total power trasitted fro the LME. The easureet of trasitter perforace i a isotropic Rayleigh fadig eviroet is based o saplig the radiated power of the LME for a discrete uber of field cobiatios i the chaber. The average value of these statistically distributed saples is proportioal to the TR ad by calibratig the average power trasfer fuctio, a absolute value of the TR ca be obtaied. Thus TR N = C N = ( R ) ref, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.. is the average power easured by fixed easureet atea ad ca be calculated usig the followig expressio: = M = S,, M S,, where is saple uber of the coplex trasfer fuctio easured with fixed easureet atea ad M is the total uber of saples easured for each fixed easureet atea. The requireets ad this test apply to all types of LME that support GSM for Release ad later releases. NOTE: This test case ca be optioally executed for Release 7 ad oward MS s supportig LME feature.

33 Miiu Requireets The average TR of low, id ad high chael of the LME i the data trasfers positio shall be higher tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results. TR average low 0 id / = 0log 3 / high /0 I additio the iiu TR of each easured chael i the data trasfers positio shall be higher tha iiu perforace requireets show i the colus Mi. [, ] TR i, i = Table 5.6.: TR iiu perforace requireet for GSM LME devices i the data trasfers positio Operatig bad low id high ower Class ower Class ower Class 3 ower Class 4 ower Class 5 ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi Average Mi GSM TBD TBD - - GSM TBD TBD - - DCS 800 TBD TBD CS 900 TBD TBD NOTE : Applicable for dual-ode GSM/UMTS. NOTE : Applicable for USB plug-i devices. The orative referece for this clause is TS5.44 sectio Test purpose The purpose of this test is to verify that TR average ad TR i of the MS is ot below specified values. A lower TR average ad TRi decrease the coverage area Method of test Iitial coditios A call is set up by the SS accordig to the geeric call set up procedure o a chael with ARFCN i the Mid ARFCN rage, power cotrol level set to Max power. MS TXWR_MAX_CCH is set to the axiu value supported by the ower Class of the Mobile uder test. The SS seds Stadard Test Sigal C; see TS5.00- [9] Aex A5.. The dowlik power is set such that there will ot be trasissio gaps due to too low sigal stregth throughout the easureet The LME shall be tested usig the Laptop Groud lae hato as described i Aex A... Test eviroet: oral coditio; see TS5.00- [9] Aex A rocedure ) ositio the LME usig the Laptop Groud lae hato described i aex A.. ad accordig to DUT positioig described i clause 5...

34 33 EIR ad ) Measure the θ EIR ϕ with a saple step of 5 i theta (θ) ad phi (φ) directios usig a test syste havig characteristics as described i Aex A. 3) Calculate TR usig equatios fro clause ) Test steps to 3 is repeated for ARFCN i the low ad high rage NOTE : Measureet of oral burst trasitter output power. The SS takes power easureet saples evely distributed over the duratio of oe burst with a saplig rate of at least /T, where T is the bit duratio. The saples are idetified i tie with respect to the odulatio o the burst. The SS idetifies the cetre of the useful 47 trasitted bits, i.e. the trasitio fro bit 3 to bit 4 of the idable, as the tiig referece. NOTE : The easureet procedure is based o the easureet of the spherical radiatio patter of the DUT. The power radiated by the DUT is sapled i far field i a group of poits located o a closed surface eclosig the DUT. The EIR saples are take usig a costat saple step of 5 both i theta (θ) ad phi (φ) directios. I soe cases a differet saplig grid ca be used to speed up the easureets (See Sectio 5..). All the EIR saples are take with two orthogoal polarizatios, θ - ad ϕ - polarisatios. NOTE 3: The oise floor of the easureet receiver shall ot disturb the power easureet. NOTE 4: No Stadard settigs: To speed up sesitivity easureets, power easureets ca be doe with o stadard odulatio. However to obtai TR result the easured EIR figures shall be oralized by ΔEIR = ( EIRstd i EIRstd i ) i= where EIRstd i is power easureet doe with stadard settig. o stadard odulatio. is aout of referece easureet poits. EIRstd i is power easureet doe with To esure accuracy of TR, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie rocedure, reverberatio chaber ethod ) ositio the LME usig the Laptop Groud lae hato described i Aex A.. ad accordig to DUT positioig described i chapter 5... ) Measure a sufficiet uber of idepedet saples (see sectio 5..3) of, usig a test syste havig the characteristics described i Aex A. 3) Calculate TR usig equatios fro clause ) Test steps to 3 is repeated for ARFCN i the low ad high rage NOTE : Measureet of oral burst trasitter output power. The SS takes power easureet saples evely distributed over the duratio of oe burst with a saplig rate of at least /T, where T is the bit duratio. The saples are idetified i tie with respect to the odulatio o the burst. The SS idetifies the cetre of the useful 47 trasitted bits, i.e. the trasitio fro bit 3 to bit 4 of the idable, as the tiig referece. NOTE : The easureet procedure is based o the easureet of the total power radiated fro the UE/MS to a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power trasitted by the DUT is udergoig Rayleigh fadig ad is sapled by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TR value. S, NOTE 3: The oise floor of the easureet receiver shall ot disturb the power easureet.

35 Test requireets The average TR of low, id ad high chael i the data trasfers positio shall be higher tha test perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results. TR average low 0 id / = 0log 3 / high /0 I additio the iiu TR of each easured chael i the data trasfers positio shall be higher tha iiu perforace requireets show i the colus Mi. Operatig bad [, ] TR i, i = Table 5.6.: TR test requireet for GSM LME devices i the data trasfers positio low id high ower Class ower Class ower Class 3 ower Class 4 ower Class 5 ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi Average Mi GSM TBD TBD - - GSM TBD TBD - - DCS 800 TBD TBD CS 900 TBD TBD NOTE : Applicable for dual-ode GSM/UMTS. NOTE : Applicable for USB plug-i devices. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 5.7 Total Radiated ower (TR) for TDD UE usig LME Editor s ote: This test case is icoplete. The followig aspects are either issig or ot yet deteried: The TR Miiu erforace Requireet for this test are udefied The Test Requireets ad related Test Toleraces applicable for this test are udefied 5.7. Defiitio ad applicability The Total Radiated ower (TR) is a easure of how uch power the DUT actually radiates. The TR is defied as the itegral of the power trasitted i differet directios over the etire radiatio sphere: ( EIR ( Ω; f ) + EIR ( Ω; f ) Ω TR = θ ϕ ) d 4π Where Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. EIR θ ad Thus EIR ϕ are the actually trasitted power-levels i correspodig polarizatios. TR π NM N M [ EIRθ ( θ, ϕ; f ) + EIRϕ ( θ, ϕ; f )] si( θ) = 0 = 0 I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 5... θ ad ϕ are the easureet

36 35 The TR ca also be calculated fro Rayleigh faded saples of the total power trasitted fro the LME. The easureet of trasitter perforace i a isotropic Rayleigh fadig eviroet is based o saplig the radiated power of the LME for a discrete uber of field cobiatios i the chaber. The average value of these statistically distributed saples is proportioal to the TR ad by calibratig the average power trasfer fuctio, a absolute value of the TR ca be obtaied. Thus TR N = C N = ( R ) ref, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.. is the average power easured by fixed easureet atea ad ca be calculated usig the followig expressio: = M = S,, M S,, where is saple uber of the coplex trasfer fuctio easured with fixed easureet atea ad M is the total uber of saples easured for each fixed easureet atea. The requireets ad this test apply to all types of UTRA for the TDD UE for Release ad later releases that support LME. NOTE: This test case ca be optioally executed for Release 8 ad oward UE s supportig LME feature Miiu Requireets The average TR of low, id ad high chael shall be higher tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results. TR average low 0 id / = 0 log 3 / high /0 I additio the iiu TR of each easured chael shall be higher tha iiu perforace requireets show i the colus Mi. TR = /0 low /0 /0 id high [ (,0, )] i 0 log i 0 0

37 36 Table 5.7.: TR iiu perforace requireet for TDD LME devices i the data trasfers positio Operatig bad ower Class ower Class ower Class 3 ower Class 4 ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi a TBD TBD b TBD TBD c TBD TBD d TBD TBD e TBD TBD f TBD TBD NOTE : Applicable for dual-ode GSM/UTRA LCR TDD. NOTE : Applicable for USB plug-i devices. The orative referece for this clause is TS5.44 [] sectio Test purpose The purpose of this test is to verify that TR average ad TRi of the UE is ot below specified values. A lower TR average ad TRi decrease the coverage area Method of test Iitial coditios The output power is a easure of the axiu power the UE ca trasit i a badwidth of at least (+ α) ties the chip rate of the radio access ode, for ore iforatio see TS 34. [3] clause 5.. The period of easureet shall be at least oe tieslot. Also care should be take that the oise floor of the easureet receiver is ot disturbig the power easureet. Norally, the receivig device should be set accordigly so that the receivig sigal will be at least 30 db higher tha the syste oise floor. Test eviroet: oral; see TS 34. [3] clause G... Frequecies to be tested: low rage, id rage, high rage; see TS 34. [3] clause G..4. ) Set the SS dowlik physical chaels accordig to settigs i Table Set the DCH power such that there will ot be trasissio gaps due to too low sigal stregth throughout the easureet. ) Coect the plug-i UE to a laptop groud plae phato. ower o the plug-i UE. The real fuctioal laptop supplies power to the plug-i UE. 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. 4) Eter the UE ito loopback test ode ad start the loopback test. 5) The easureet receiver shall be set to: zero spa, video trigger ad RMS detector. The RBW shall be at least (+ α) ties the chip rate of the radio access ode ad the VBW at least 3 ties bigger tha the RBW. For.8Mcps TDD UE, the RBW shall be set to 3MHz, ad VBW shall be set to 0MHz. See TS [0] ad TS [] for details regardig geeric call setup procedure ad loopback test.

38 37 Table 5.7.: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower Ior -75 db DwCH DwCH_Ec / Ior = 0 db CCCH -CCCH_Ec / Ior = -3 db SCCCH S-CCCH_Ec / Ior = -6 db ICH ICH_Ec / Ior = -6 db FACH FACH_Ec / Ior = -6 db DL DCH DCH_Ec / Ior = 0 db rocedure ) Sed cotiuously Up power cotrol coads to the plug-i UE. ) As the plug-i UE reaches axiu power, start sedig N5 to ositio the plug-i UE ito the USB coector i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio positio the plug-i UE so that it is horizotally plugged ito the horizotal USB coector.ta patter. 3) EIR ad EIR ϕ with a saple step of 5 i theta (θ) ad phi (φ) directios usig a test syste havig characteristics as described i Aex A. 4) Measure the θ 5) Calculate TR usig equatios fro clause 5.7. NOTE : The easureet procedure is based o the easureet of the spherical radiatio patter of the DUT. The power radiated by the DUT is sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIR saples are take usig a costat saple step of 5 both i theta (θ) ad phi (φ) directios. I soe cases a differet saplig grid ay be used to speed up the easureets (See Sectio 5..). All the EIR saples are take with two orthogoal polarizatios, θ - ad ϕ - polarisatios. NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet. NOTE 3: No Stadard settigs: To speed up sesitivity easureets, power easureets ay be doe with o stadard odulatio. However to obtai TR result the easured EIR figures shall be oralized by ΔEIR = ( EIRstd i EIRstd i ) i= where EIRstd i is power easureet doe with stadard settig. o stadard odulatio. is aout of referece easureet poits. EIRstd i is power easureet doe with To esure accuracy of TR, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie rocedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the plug-i UE. ) As the plug-i UE reaches axiu power, start sedig N5 data patter. 3) ositio the plug-i UE ito the USB coector i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio positio the plug-i UE so that it is horizotally plugged ito the horizotal USB coector.

39 38 4) Measure a sufficiet uber of idepedet saples (see sectio 5..3) of, usig a test syste havig the characteristics described i Aex A. 5) Calculate TR usig equatios fro sectio NOTE : The easureet procedure is based o the easureet of the total power radiated fro the UE/MS to a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power trasitted by the DUT is udergoig Rayleigh fadig ad is sapled by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TR value. S, NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet Test requireets The average TR of low, id ad high chael shall be higher tha test perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR. TR average low 0 id / = 0 log 3 / high /0 I additio the iiu TR of each easured chael shall be higher tha iiu perforace requireets show i the colus Mi. TR = /0 low /0 /0 id high [ (,0, )] i 0 log i 0 0 Table 5.7.3: TR test requireet for TDD LME devices i the data trasfers positio Operatig bad ower Class ower Class ower Class 3 ower Class 4 ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi TBD + a TBD + TT b TBD + TT c TBD + TT d TBD + TT e TBD + TT f TBD + TT NOTE : Applicable for dual-ode GSM/UTRA LCR TDD. NOTE : Applicable for USB plug-i devices. TT TBD + TT TBD + TT TBD + TT TBD + TT TBD + TT NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 5.8 Total Radiated ower (TR) for FDD UE usig LEE Editor s ote: This test case is ot copleted Miiu Requireets are issig Test requireets ad related TT are issig

40 Defiitio ad applicability The Total Radiated ower (TR) is a easure of how uch power the DUT actually radiates. The TR is defied as the itegral of the power trasitted i differet directios over the etire radiatio sphere: ( EIR ( Ω; f ) + EIR ( Ω; f ) Ω TR = θ ϕ ) d 4π Where Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. EIR θ ad Thus EIR ϕ are the actually trasitted power-levels i correspodig polarizatios. TR π NM N M [ EIRθ ( θ, ϕ; f ) + EIRϕ ( θ, ϕ; f )] si( θ) = 0 = 0 I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 5... θ ad ϕ are the easureet The TR ca also be calculated fro Rayleigh faded saples of the total power trasitted fro the LEE. The easureet of trasitter perforace i a isotropic Rayleigh fadig eviroet is based o saplig the radiated power of the LEE for a discrete uber of field cobiatios i the chaber. The average value of these statistically distributed saples is proportioal to the TR ad by calibratig the average power trasfer fuctio, a absolute value of the TR ca be obtaied. Thus TR N = C N = ( R ) ref, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.. is the average power easured by fixed easureet atea ad ca be calculated usig the followig expressio: = M = S,, M S,, where is saple uber of the coplex trasfer fuctio easured with fixed easureet atea ad M is the total uber of saples easured for each fixed easureet atea. Note that all averagig ust be perfored usig liear power values (e.g. easureets i Watts). The requireets ad this test apply to all types of UTRA for the FDD UE for Release ad later releases that support LEE. NOTE: This test case ca be optioally executed for Release 7 ad oward UE s supportig LEE feature.

41 Miiu Requireets The average TR of low, id ad high chael of the LME i the data trasfers positio shall be higher tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results. TR average low 0 id / = 0log 3 / high /0 I additio the iiu TR of each easured chael i the data trasfers positio shall be higher tha iiu perforace requireets show i the colus Mi. [, ] TR i, i = Table 5.8.: TR iiu perforace requireet for LEE devices i the data trasfers positio Operatig bad low ower Class ower Class ower Class 3 ower Class 3bis ower Class 4 ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi I - - TBD TBD TBD TBD TBD TBD II - - TBD TBD TBD TBD TBD TBD III - - TBD TBD TBD TBD TBD TBD IV - - TBD TBD TBD TBD TBD TBD V - - TBD TBD TBD TBD TBD TBD VI - - TBD TBD TBD TBD TBD TBD VII - - TBD TBD TBD TBD TBD TBD VIII - - TBD TBD TBD TBD TBD TBD IX - - TBD TBD TBD TBD TBD TBD XIX - - TBD TBD TBD TBD TBD TBD NOTE : Applicable for dual-ode GSM/UMTS. NOTE : Applicable for otebook devices. id high The orative referece for this clause is TS5.44 sectio Test purpose The purpose of this test is to verify that TR average ad TRi of the UE is ot below specified values. A lower TR average ad TRi decrease the coverage area Method of test Iitial coditios The output power is a easure of the axiu power the UE ca trasit i a badwidth of at least (+ α) ties the chip rate of the radio access ode, for ore iforatio see 3G TS 34. chapter 5.. The period of easureet shall be at least oe tieslot. Also care should be take that the oise floor of the easureet receiver is ot disturbig the power easureet. The LEE shall be tested accordig to DUT positioig described i chapter 5... Test eviroet: oral; see TS34.- [3] clause G... Frequecies to be tested: low rage, id rage, high rage; see TS34.- [3] clause G..4. ) Set the SS dowlik physical chaels accordig to settigs i Table Set the DCH power such that there will ot be trasissio gaps due to too low sigal stregth throughout the easureet. ) ower o the UE.

42 4 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. Copressed ode shall be set to OFF. 4) Eter the UE ito loopback test ode ad start the loopback test. See TS [0] ad TS [] for details regardig geeric call setup procedure ad loopback test. Table 5.8.: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower CICH CICH_Ec / DCH_Ec = 7 db -CCCH -CCCH_Ec / DCH_Ec = 5 db SCH SCH_Ec / DCH_Ec = 5 db ICH ICH_Ec / DCH_Ec = db DCH Test depedet power rocedure ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio ad cofigure the LEE accordig to chapter 5.. EIR ad EIR ϕ with a saple step of 5 i theta (θ) ad phi (φ) directios usig a test syste havig characteristics as described i Aex A. 4) Measure the θ 5) Calculate TR usig equatios fro chapter 5.8. NOTE : The easureet procedure is based o the easureet of the spherical radiatio patter of the DUT. The power radiated by the DUT is sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIR saples are take usig a costat saple step of 5 both i theta (θ) ad phi (φ) directios. I soe cases a differet saplig grid ay be used to speed up the easureets (See Sectio 5..). All the EIR saples are take with two orthogoal polarizatios, θ - ad ϕ - polarisatios. NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet. NOTE 3: No Stadard settigs: To speed up sesitivity easureets, power easureets ay be doe with o stadard odulatio. However to obtai TR result the easured EIR figures shall be oralized by ΔEIR = ( EIRstd i EIRstd i ) i= where EIRstd i is power easureet doe with stadard settig. o stadard odulatio. is aout of referece easureet poits. EIRstd i is power easureet doe with To esure accuracy of TR, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie rocedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio ad cofigure the LEE accordig to chapter 5..

43 4 4) Measure a sufficiet uber of idepedet saples (see sectio 5..3) of, usig a test syste havig characteristics as described i Aex A. 5) Calculate TR usig equatios fro sectio NOTE : The easureet procedure is based o the easureet of the total power radiated fro the UE/MS to a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power trasitted by the DUT is udergoig Rayleigh fadig ad is sapled by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TR value. S, NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet Test requireets The average TR of low, id ad high chael i the data trasfers positio shall be higher tha test perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results. TR average low 0 id / = 0log 3 / high /0 I additio the iiu TR of each easured chael i the data trasfers positio shall be higher tha iiu perforace requireets show i the colus Mi. Operatig bad [, ] TR i, i = Table 5.8.3: TR test requireet for LEE devices i the data trasfers positio low ower Class ower Class ower Class 3 ower Class 3bis ower Class 4 ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi I - - TBD TBD TBD TBD TBD TBD II - - TBD TBD TBD TBD TBD TBD III - - TBD TBD TBD TBD TBD TBD IV - - TBD TBD TBD TBD TBD TBD V - - TBD TBD TBD TBD TBD TBD VI - - TBD TBD TBD TBD TBD TBD VII - - TBD TBD TBD TBD TBD TBD VIII - - TBD TBD TBD TBD TBD TBD IX - - TBD TBD TBD TBD TBD TBD XIX - - TBD TBD TBD TBD TBD TBD NOTE : Applicable for dual-ode GSM/UMTS. NOTE : Applicable for otebook devices. id high NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 5.9 Total Radiated ower (TR) for GSM MS usig LEE Editor s ote: This test case is ot copleted Miiu Requireets are issig Test requireets ad related TT are issig

44 Defiitio ad applicability The Total Radiated ower (TR) is a easure of how uch power the DUT actually radiates. The TR is defied as the itegral of the power trasitted i differet directios over the etire radiatio sphere: ( EIR ( Ω; f ) + EIR ( Ω; f ) Ω TR = θ ϕ ) d 4π Where Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. EIR θ ad Thus EIR ϕ are the actually trasitted power-levels i correspodig polarizatios. TR π NM N M [ EIRθ ( θ, ϕ; f ) + EIRϕ ( θ, ϕ; f )] si( θ) = 0 = 0 I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 5... θ ad ϕ are the easureet The TR ca also be calculated fro Rayleigh faded saples of the total power trasitted fro the LEE. The easureet of trasitter perforace i a isotropic Rayleigh fadig eviroet is based o saplig the radiated power of the LEE for a discrete uber of field cobiatios i the chaber. The average value of these statistically distributed saples is proportioal to the TR ad by calibratig the average power trasfer fuctio, a absolute value of the TR ca be obtaied. Thus TR N = C N = ( R ) ref, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.. is the average power easured by fixed easureet atea ad ca be calculated usig the followig expressio: = M = S,, M S,, where is saple uber of the coplex trasfer fuctio easured with fixed easureet atea ad M is the total uber of saples easured for each fixed easureet atea. The requireets ad this test apply to all types of LEE that support GSM for Release ad later releases. NOTE: This test case ca be optioally executed for Release 7 ad oward MS s supportig LEE feature Miiu Requireets The average TR of low, id ad high chael of the LME i the data trasfers positio shall be higher tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results.

45 44 TR average low 0 id / = 0log 3 / high /0 I additio the iiu TR of each easured chaellig the data trasfers positio shall be higher tha iiu perforace requireets show i the colus Mi. [, ] TR i, i = Table 5.9.: TR iiu perforace requireet for GSM LEE devices i the data trasfer positio Operatig bad low id high ower Class ower Class ower Class 3 ower Class 4 ower Class 5 ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi Average Mi GSM TBD TBD - - GSM TBD TBD - - DCS 800 TBD TBD CS 900 TBD TBD NOTE : Applicable for dual-ode GSM/UMTS. NOTE : Applicable for otebook devices. The orative referece for this clause is TS5.44 sectio Test purpose The purpose of this test is to verify that TR average ad TR i of the MS is ot below specified values. A lower TR average ad TRi decrease the coverage area Method of test Iitial coditios A call is set up by the SS accordig to the geeric call set up procedure o a chael with ARFCN i the Mid ARFCN rage, power cotrol level set to Max power. MS TXWR_MAX_CCH is set to the axiu value supported by the ower Class of the Mobile uder test. The SS seds Stadard Test Sigal C; see TS5.00- [9] Aex A5.. The dowlik power is set such that there will ot be trasissio gaps due to too low sigal stregth throughout the easureet The LEE shall be tested accordig to DUT positioig described i clause 5... Test eviroet: oral coditio; see TS5.00- [9] Aex A rocedure ) ositio ad cofigure the LEE accordig to clause 5.. EIR ad EIR ϕ with a saple step of 5 i theta (θ) ad phi (φ) directios usig a test syste havig characteristics as described i Aex A. ) Measure the θ 3) Calculate TR usig equatios fro clause ) Test steps to 3 is repeated for ARFCN i the low ad high rage NOTE : Measureet of oral burst trasitter output power. The SS takes power easureet saples evely distributed over the duratio of oe burst with a saplig rate of at least /T, where T is the bit duratio. The

46 45 saples are idetified i tie with respect to the odulatio o the burst. The SS idetifies the cetre of the useful 47 trasitted bits, i.e. the trasitio fro bit 3 to bit 4 of the idable, as the tiig referece. NOTE : The easureet procedure is based o the easureet of the spherical radiatio patter of the DUT. The power radiated by the DUT is sapled i far field i a group of poits located o a closed surface eclosig the DUT. The EIR saples are take usig a costat saple step of 5 both i theta (θ) ad phi (φ) directios. I soe cases a differet saplig grid ca be used to speed up the easureets (See Sectio 5..). All the EIR saples are take with two orthogoal polarizatios, θ - ad ϕ - polarisatios. NOTE 3: The oise floor of the easureet receiver shall ot disturb the power easureet. NOTE 4: No Stadard settigs: To speed up sesitivity easureets, power easureets ca be doe with o stadard odulatio. However to obtai TR result the easured EIR figures shall be oralized by ΔEIR = ( EIRstd i EIRstd i ) i= where EIRstd i is power easureet doe with stadard settig. o stadard odulatio. is aout of referece easureet poits. EIRstd i is power easureet doe with To esure accuracy of TR, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie rocedure, reverberatio chaber ethod ) ositio ad cofigure the LEE accordig to clause 5.. ) Measure a sufficiet uber of idepedet saples (see sectio 5..3) of, usig a test syste havig the characteristics described i Aex A. 3) Calculate TR usig equatios fro sectio ) Test steps to 3 is repeated for ARFCN i the low ad high rage NOTE : Measureet of oral burst trasitter output power. The SS takes power easureet saples evely distributed over the duratio of oe burst with a saplig rate of at least /T, where T is the bit duratio. The saples are idetified i tie with respect to the odulatio o the burst. The SS idetifies the cetre of the useful 47 trasitted bits, i.e. the trasitio fro bit 3 to bit 4 of the idable, as the tiig referece. NOTE : The easureet procedure is based o the easureet of the total power radiated fro the UE/MS to a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power trasitted by the DUT is udergoig Rayleigh fadig ad is sapled by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TR value. S, NOTE 3: The oise floor of the easureet receiver shall ot disturb the power easureet Test requireets The average TR of low, id ad high chael i the data trasfers positio shall be higher tha test perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results. TR average low 0 id / = 0log 3 / high /0 I additio the iiu TR of each easured chael i the data trasfers positio shall be higher tha iiu perforace requireets show i the colus Mi.

47 46 [, ] TR i, i = low id high Operatig bad Table 5.9.: TR test requireet for GSM LEE devices i the data trasfer positio ower Class ower Class ower Class 3 ower Class 4 ower Class 5 ower (db) ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi Average Mi GSM TBD TBD - - GSM TBD TBD - - DCS 800 TBD TBD CS 900 TBD TBD NOTE : Applicable for dual-ode GSM/UMTS. NOTE : Applicable for otebook devices. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 5.0 Total Radiated ower (TR) for TDD UE usig LEE Editor s ote: This test case is icoplete. The followig aspects are either issig or ot yet deteried: The TR Miiu erforace Requireet for this test are udefied The Test Requireets ad related Test Toleraces applicable for this test are udefied 5.0. Defiitio ad applicability The Total Radiated ower (TR) is a easure of how uch power the DUT actually radiates. The TR is defied as the itegral of the power trasitted i differet directios over the etire radiatio sphere: ( EIR ( Ω; f ) + EIR ( Ω; f ) Ω TR = θ ϕ ) d 4π Where Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. EIR θ ad Thus EIR ϕ are the actually trasitted power-levels i correspodig polarizatios. TR π NM N M [ EIRθ ( θ, ϕ; f ) + EIRϕ ( θ, ϕ; f )] si( θ) = 0 = 0 I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 5... θ ad ϕ are the easureet The TR ca also be calculated fro Rayleigh faded saples of the total power trasitted fro the LEE. The easureet of trasitter perforace i a isotropic Rayleigh fadig eviroet is based o saplig the radiated power of the LEE for a discrete uber of field cobiatios i the chaber. The average value of these statistically distributed saples is proportioal to the TR ad by calibratig the average power trasfer fuctio, a absolute value of the TR ca be obtaied. Thus TR N = C N = ( R ) ref,

48 47 where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.. is the average power easured by fixed easureet atea ad ca be calculated usig the followig expressio: = M = S,, M S,, where is saple uber of the coplex trasfer fuctio easured with fixed easureet atea ad M is the total uber of saples easured for each fixed easureet atea. Note that all averagig ust be perfored usig liear power values (e.g. easureets i Watts). The requireets ad this test apply to all types of UTRA for the TDD UE for Release ad later releases that support LEE. Note: This test case ca be optioally executed for Release 8 ad oward UE s supportig LEE feature Miiu Requireets The average TR of low, id ad high chael shall be higher tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR results. TR average low 0 id / = 0 log 3 / high /0 I additio the iiu TR of each easured chael shall be higher tha iiu perforace requireets show i the colus Mi. TR = /0 low /0 /0 id high [ (,0, )] i 0 log i 0 0 Table 5.0.: TR iiu perforace requireet for TDD LEE devices i the data trasfers positio Operati g bad ower Class ower Class ower Class 3 ower Class 4 ower (db) ower (db) ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi a - - TBD TBD b - - TBD TBD c - - TBD TBD d - - TBD TBD e - - TBD TBd f - - TBD TBD NOTE : Applicable for dual-ode GSM/UTRA LCR TDD. NOTE : Applicable for otebook devices. The orative referece for this clause is TS5.44 [] sectio Test purpose The purpose of this test is to verify that TR average ad TRi of the UE is ot below specified values. A lower TR average ad TRi decrease the coverage area.

49 Method of test Iitial coditios The output power is a easure of the axiu power the UE ca trasit i a badwidth of at least (+ α) ties the chip rate of the radio access ode, for ore iforatio see TS 34. [3] clause 5.. The period of easureet shall be at least oe tieslot. Also care should be take that the oise floor of the easureet receiver is ot disturbig the power easureet. Norally, the receivig device should be set accordigly so that the receivig sigal will be at least 30 db higher tha the syste oise floor. The LEE shall be tested accordig to DUT positioig described i clause 5... Test eviroet: oral; see TS 34. [3] clause G... Frequecies to be tested: low rage, id rage, high rage; see TS 34. [3] clause G..4. ) Set the SS dowlik physical chaels accordig to settigs i Table Set the DCH power such that there will ot be trasissio gaps due to too low sigal stregth throughout the easureet. ) ower o the LEE UE 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. 4) Eter the UE ito loopback test ode ad start the loopback test. 5) The easureet receiver shall be set to: zero spa, video trigger ad RMS detector. The RBW shall be at least (+ α) ties the chip rate of the radio access ode ad the VBW at least 3 ties bigger tha the RBW. For.8Mcps TDD UE, the RBW shall be set to 3MHz, ad VBW shall be set to 0MHz. See TS [0] ad TS [] for details regardig geeric call setup procedure ad loopback test. Table 5.0.: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower Ior -75 db DwCH DwCH_Ec / Ior = 0 db CCCH -CCCH_Ec / Ior = -3 db SCCCH S-CCCH_Ec / Ior = -6 db ICH ICH_Ec / Ior = -6 db FACH FACH_Ec / Ior = -6 db DL DCH DCH_Ec / Ior = 0 db rocedure ) Sed cotiuously Up power cotrol coads to the LEE UE. ) As the LEE UE reaches axiu power, start sedig N5 data patter. 3) ositio ad cofigure the LEE accordig to clause 5.. EIR ad 4) Measure the θ EIR ϕ with a saple step of 5 i theta (θ) ad phi (φ) directios usig a test syste havig characteristics as described i Aex A. 5) Calculate TR usig equatios fro clause 5.0. NOTE : The easureet procedure is based o the easureet of the spherical radiatio patter of the DUT. The power radiated by the DUT is sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIR saples are take usig a costat saple step of 5 both i theta (θ) ad phi (φ) directios. I soe cases a differet saplig grid ay be used to speed up the easureets (See Sectio 5..). All the EIR saples are take with two orthogoal polarizatios, θ - ad ϕ - polarisatios.

50 49 NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet. NOTE 3: No Stadard settigs: To speed up sesitivity easureets, power easureets ay be doe with o stadard odulatio. However to obtai TR result the easured EIR figures shall be oralized by ΔEIR = ( EIRstd i EIRstd i ) i= where EIRstd i is power easureet doe with stadard settig. o stadard odulatio. is aout of referece easureet poits. EIRstd i is power easureet doe with To esure accuracy of TR, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie rocedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the LEE UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio ad cofigure the LEE accordig to clause 5.. 4) Measure a sufficiet uber of idepedet saples (see sectio 5..3) of, usig a test syste havig the characteristics described i Aex A. 5) Calculate TR usig equatios fro sectio NOTE : The easureet procedure is based o the easureet of the total power radiated fro the UE/MS to a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power trasitted by the DUT is udergoig Rayleigh fadig ad is sapled by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TR value. S, NOTE : The oise floor of the easureet receiver shall ot disturb the power easureet Test requireets The average TR of low, id ad high chael shall be higher tha test perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TR. TR average low 0 id / = 0 log 3 / high /0 I additio the iiu TR of each easured chael shall be higher tha iiu perforace requireets show i the colus Mi. TR = /0 low /0 /0 id high [ (,0, )] i 0 log i 0 0

51 50 Table 5.0.3: TR test requireet for TDD LEE devices i the data trasfers positio Operati g bad ower Class ower Class ower Class 3 ower Class 4 ower (db) ower (db ower (db) ower (db) Average Mi Average Mi Average Mi Average Mi a - - TBD +TT TBD +TT b - - TBD +TT TBD +TT c - - TBD +TT TBD +TT d - - TBD +TT TBD +TT e - - TBD +TT TBD +TT TT f - - TBD +TT TBD +TT NOTE : Applicable for dual-ode GSM/UTRA LCR TDD. NOTE : Applicable for otebook devices. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 6 Receiver erforace 6. Geeral This sectio describes the specifics of the radiated sesitivity easureet procedure. There are two ethods described. The ai ethod is based o a aechoic chaber approach ad the alterative ethod is based o a reverberatio chaber approach. The procedure for the easureet of the UE receiver perforace is i priciple equivalet to the trasitter perforace easureet described i Aex A. The basic differece is that ow the absolute sesitivity value at a predefied BER level is the paraeter of iterest i each easureet poit. Note that the receiver ad trasitter perforaces easureets ay be doe i parallel, at each positio. For DUTs with ore tha oe atea port, all the tests should be perfored usig both (all) ateas siultaeously. 6.. DUT ositioig The DUT positioig o head phato eas that the easureets are perfored so that the DUT is placed agaist a SAM phato. The characteristics of the SAM phato are specified i Aex A... The DUT is attached to the SAM phato i cheek positio as defied i IEEE Std 58. The DUT perforace is easured o both left ad right side of the head. The DUT positioig o laptop groud plae phato eas that a laptop groud plae phato is used for radiated perforace easureets i case of plug-i DUT like USB dogles that is used away fro the user s head. The DUT is coected to the USB coector of the laptop groud plae phato. The characteristics of the laptop groud plae phato ad the DUT positioig are specified i Aex A... The objective of the laptop groud plae phato is to reproduce the effects of the groud plae for the atea of the DUT while avoidig the variatio of the easureets itroduced by a real laptop. The DUT shall be plugged ito the USB coector ad positioed i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio the DUT with either the rotary USB porter or o-rotary USB porter should be horizotally plugged ito the horizotal USB coector. The DUT positioig i free space cofiguratio without head ad had phatos as specified i Aex A.4 is used for radiated perforace easureets i case of ebedded odule card that is used away fro the user s head.

52 5 6.. Saplig grid A 5 -saple grid i both aziuth ad elevatio ca be cosidered sufficiet for accurate easureets. Geerally it ca be said that sice the radiatig object has a liited size the gai patter caot chage arbitrarily versus agle, ad therefore oly a liited uber of saples are required to represet the gai patter to a give accuracy cosequetly. A 30 -saple grid ay be used takig also ito accout that there is a trade-off betwee the accuracy of the approxiated TRS values ad the total easureet tie required to obtai a coplete 3-D radiatio patter of the atea. Alteratively, differet saplig patters ay be used, if they are able to esure sae or greater level of accuracy. The TRS ca be calculated by iterpolatig the values to poits o the regular grid. If a alterative saplig patter is used uber of easureet poits should be greater tha i the regular saplig grid Nuber of idepedet saples (for reverberatio chaber procedure) Whe easurig the TRS i a isotropic Rayleigh fadig eviroet, 00 idepedet saples ca be cosidered sufficiet for esurig a expaded accuracy better tha 0.5 db. 6. Total Radiated Sesitivity (TRS) for FDD UE 6.. Defiitio ad applicability The Total Radiated Sesitivity is defied as: TRS = 4π + dω EISθ ( Ω; f ) EISϕ ( Ω; f ) Where the effective isotropic sesitivity (EIS) is defied as the power available at the atea output such as the sesitivity threshold is achieved for each polarizatio. Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. TRS π N M = 0 NM = + si 0 EISθ ( θ, ϕ; f ) EISϕ ( θ, ϕ; f ) I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 6... ( θ ) θ ad ϕ are the easureet The TRS ca also be calculated fro easureets i a Rayleigh fadig 3 diesioal isotropic eviroet with i average uifor elevatio ad aziuth distributio. The calculatio of the TRS is i this case based o searchig for the lowest power received by the UE/MS for a discrete uber of field cobiatios i the chaber that gives a BER that is better tha the specified target BER level. By calibratig the average power trasfer fuctio, a absolute value of the TRS ca be obtaied. The followig expressio ca be used to fid the TRS. TRS N N = ( C ( R ) ) N = ref, thres,

53 5 where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.., is calculated by usig the followig equatio: thres thres, = M = S thres,, M thres S, where, is the :th value of the trasfer fuctio for fixed easureet atea, which gives the BER threshold. M is the total uber of values of the BER threshold power easured for each fixed easureet atea. The requireets ad this test apply to all types of UTRA for the FDD UE for Release 7 ad later releases. 6.. Miiu requireets The average TRS of low, id ad high chael i beside head positio for % BER with.kbps DL referece chael as defied i Aex C.3 of TS5.0 [] shall be lower tha iiu perforace requireets for roaig bads show i Table 6... The averagig shall be doe i liear scale for the TRS results of both right ad left side of the phato head. TRS average = 0log left _ low / 0 left _ id /0 left_ high /0 right _ low /0 right _ id /0 right _ high / I additio the axiu TRS of each easured chael i beside head positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = 0log ax 0 ax left _ low /0 left _ id /0 left _ high /0 right _ low /0 right _ id /0 right _ high /0 [ (,0,0,0,0,0 )] Table 6..: TRS iiu requireets for FDD roaig bads i the speech positio for the priary echaical ode Operatig Bad Uit <REFÎ or> Average Max I db/3.84 MHz II db/3.84 MHz III db/3.84 MHz IV db/3.84 MHz V db/3.84 MHz VI db/3.84 MHz VII db/3.84 MHz VIII db/3.84 MHz IX db/3.84 MHz XIX db/3.84 MHz NOTE For ower Class 3, 3bis ad 4 this shall be achieved at the axiu output power. NOTE For the UE which supports both Bad III ad Bad IX operatig frequecies, the referece level of TDB db TRS <REFÎ or> [average ad i] shall apply for Bad IX. NOTE 3: Applicable for dual-ode GSM/UMTS. The orative referece for this clause is TS5.44 sectio 7...

54 Test urpose The purpose of this test is to esure that TRS average ad TRS ax of the UE is above specified liit. The lack of the receptio sesitivity decreases the coverage area at the far side fro Node B Method of test Iitial coditios Test eviroet: oral; see TS34.- [3] clause G... ) Set the SS dowlik physical chaels accordig to settigs i Table 6... ) ower o the UE. 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. Copressed ode shall be set to OFF. 4) Eter the UE ito loopback test ode ad start the loopback test. See TS [0] ad TS [] for details regardig geeric call setup procedure ad loopback test. Table 6..: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower CICH CICH_Ec / DCH_Ec = 7 db -CCCH -CCCH_Ec/ DCH_Ec = 5 db SCH SCH_Ec / DCH_Ec = 5 db ICH ICH_Ec / DCH_Ec = db DCH Test depedet power Test procedure ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio the UE agaist the SAM phato 4) Measure EIS fro oe easureet poit. EIS is the power trasitted fro oe specific directio to the UE causig BER value of % ± 0.% usig 0000 or ore bits, see Aex E.9.. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 5) Measure the EIS for every directio of selected saplig gird usig two orthogoal polarizatios to obtai TRS. 6) Calculate TRS usig equatios fro chapter 6.. NOTE: To speed up sesitivity easureets o stadard settig (i.e. data speed, CL, BER target) ca be used i the easureets. However to obtai TRS result the easured EIS figures shall be oralized by ΔEIS = ( EISstd i EISstd i ) i= Where EISstd i is sesitivity easureet doe with stadard settig. with o stadard settigs. is aout of referece easureet poits. EISstd i is sesitivity easureet doe To esure accuracy of TRS, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie.

55 54 The easureet procedure is based o the easureet of the spherical sesitivity patter of the DUT. The sesitivity values of the DUT at a predefied BER level are sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIS saples are take usig a costat saple step of 30 both i theta (θ) ad phi (φ) directios. All the EIS saples are take with two orthogoal polarizatios, θ - ad ϕ -polarisatios. The Total Radiated Sesitivity is calculated fro the easured data by equatio i chapter Test procedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio the UE agaist the SAM phato 4) Set the base statio siulator to a specific output power ad perfor a BER easureet. 5) Icrease or decrease the base statio output power as eeded, ad repeat step 5 util the lowest output power is foud that gives a BER value of % ± 0.% usig 0000 or ore bits, see Aex E.9.. This correspods to thres,, S. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 6) Repeat step 4 ad 5 util a sufficiet uber of idepedet saples (see sectio 6..3) of easured. thres,, S has bee 7) Calculate TRS usig equatios fro chapter 6.. NOTE : The easureet procedure is based o saples of the received sigal power at the UE/MS fro a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power received by the DUT is udergoig Rayleigh fadig ad is trasitted by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TRS value Test requireets The average TRS of low, id ad high chael i beside head positio for % BER with.kbps DL referece chael as defied i Aex C.3 of [] shall be lower tha test requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results of both right ad left side of the phato head. TRS average = 0log left / 0 _ /0 _ /0 _ /0 _ /0 _ / 0 0 _ low left id left high right low right id right high I additio the axiu TRS of each easured chael i beside head positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = 0log ax 0 ax left _ low /0 left _ id /0 left _ high /0 right _ low /0 right _ id /0 right _ high /0 [ (,0,0,0,0,0 )]

56 55 Table 6..3: TRS test requireets for FDD roaig bads i the speech positio for the priary echaical ode Operatig Bad Uit <REFÎ or> Average Max I db/3.84 MHz II db/3.84 MHz III db/3.84 MHz IV db/3.84 MHz V db/3.84 MHz VI db/3.84 MHz VII db/3.84 MHz VIII db/3.84 MHz IX db/3.84 MHz XIX db/3.84 MHz NOTE For ower Class 3, 3bis ad 4 this shall be achieved at the axiu output power. NOTE For the UE which supports both Bad III ad Bad IX operatig frequecies, the referece level of TDB db TRS <REFÎ or> [average ad i] shall apply for Bad IX. NOTE3: Applicable for dual-ode GSM/UMTS. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 6.3 Total Radiated Sesitivity (TRS) for GSM MS 6.3. Defiitio ad applicability The Total Radiated Sesitivity is defied as: TRS = 4π + dω EISθ ( Ω; f ) EISϕ ( Ω; f ) Where the effective isotropic sesitivity (EIS) is defied as the power available at the atea output such as the sesitivity threshold is achieved for each polarizatio. Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. TRS π N M = 0 NM = + si 0 EISθ ( θ, ϕ; f ) EISϕ ( θ, ϕ; f ) ( θ ) I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio θ ad ϕ are the easureet The TRS ca also be calculated fro easureets i a Rayleigh fadig 3 diesioal isotropic eviroet with uifor elevatio ad aziuth distributio. The calculatio of the TRS is i this case based o searchig for the lowest power received by the UE/MS for a discrete uber of field cobiatios i the chaber The power received by the UE at each discrete field cobiatio that provides a BER (or BLER) which is better tha the specified target BER/BLER level shall be averaged with other such easureets usig differet field cobiatios. By calibratig the average power trasfer fuctio, a absolute value of the TRS ca be obtaied whe the liear values of all dowlik power levels described above have bee averaged. The followig expressio ca be used to fid the TRS.

57 56 TRS N N = ( C ( R ) ) N = ref, thres, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.., is calculated by usig the followig equatio: thres thres, = M = S thres,, M thres S, where, is the :th value of the trasfer fuctio for fixed easureet atea, which gives the BER threshold. M is the total uber of values of the BER threshold power easured for each fixed easureet atea. The requireets ad this test apply to all types of MS that support GSM for Release 7 ad later releases Miiu requireets The average TRS of low, id ad high chael i beside head positio for TCH/FS at % class II (RBER) shall be lower tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results of both right ad left side of the phato head. TRS average = 0log left _ low / 0 left _ id /0 left_ high /0 right _ low /0 right _ id /0 right _ high / I additio the axiu TRS of each easured chael i beside head positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = 0log ax 0 ax left _ low /0 left _ id /0 left _ high /0 right _ low /0 right _ id /0 right _ high /0 [ (,0,0,0,0,0 )] Table 6.3.: TRS iiu requireets for GSM roaig bads i the speech positio for the priary echaical ode Operatig Bad Uit <REFÎ or> Average Max GSM 850 db GSM 900 db DCS 800 db CS 900 db Note : For ower Class ad 4 this shall be achieved at the axiu output power. Note : Applicable for dual-ode GSM/UMTS. The orative referece for this clause is TS5.44 sectio 7...

58 Test urpose The purpose of this test is to esure thattrs average ad TRS ax of the MS is above specified liit. The lack of the receptio sesitivity decreases the coverage area at the far side fro Base Statio Method of test Iitial coditios Test eviroet: oral coditio; see TS5.00- [9] Aex A... A call is set up accordig to the geeric call set up procedure o a TCH/FS with a ARFCN i the Mid ARFCN rage, power cotrol level set to axiu power. The SS trasits Stadard Test Sigal C o the traffic chael, see TS5.00- [9] Aex A5.. The SS coads the MS to create traffic chael loop back sigallig erased fraes, see TS44.04 [34] clause Test procedure ) ositio the MS agaist the SAM phato ) The SS copares the data of the sigal that it seds to the MS with the sigal which is looped back fro the receiver after deodulatio ad decodig, ad checks the frae erasure idicatio. 3) The SS deteries the uber of residual bit error evets for the bits of class II, by exaiig sequeces of at least the iiu uber of saples of cosecutive bits of class II. Bits are take oly fro those fraes ot sigalled as erased. 4) Measure EIS fro oe easureet poit. EIS is the power trasitted fro oe specific directio to the MS causig RBERII value of.00% ± 0.%, see Aex E.9. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 5) Measure the EIS for every directio of selected saplig gird usig two orthogoal polarizatios to obtai TRS. 6) Calculate TRS usig equatios fro chapter ) Steps ) to 6) are repeated for TCH/FS with ARFCNs i the Low ARFCN rage ad the High ARFCN rage. NOTE : No stadard settigs: To speed up sesitivity easureets o stadard settig (i.e. data speed, CL, BER target) ca be used i the easureets. However to obtai TRS result the easured EIS figures shall be oralized by ΔEIS = ( EISstd i EISstd i ) i= Where EISstd i is sesitivity easureet doe with stadard settig. with o stadard settigs. is aout of referece easureet poits. EISstd i is sesitivity easureet doe To esure accuracy of TRS, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie. The easureet procedure is based o the easureet of the spherical sesitivity patter of the DUT. The sesitivity values of the DUT at a predefied BER level are sapled i far field i a group of poits located o a closed surface eclosig the DUT. The EIS saples are take usig a costat saple step of 30 both i theta (θ) ad phi (φ) directios. All the EIS saples are take with two orthogoal polarizatios, θ - ad ϕ -polarisatios. The Total Radiated Sesitivity is calculated fro the easured data by equatio i chapter 6.3..

59 Test procedure, reverberatio chaber ethod ) ositio the UE agaist the SAM phato ) The SS copares the data of the sigal that it seds to the MS with the sigal which is looped back fro the receiver after deodulatio ad decodig, ad checks the frae erasure idicatio. 3) The SS deteries the uber of residual bit error evets for the bits of class II, by exaiig sequeces of at least the iiu uber of saples of cosecutive bits of class II. Bits are take oly fro those fraes ot sigalled as erased. 4) Set the base statio siulator to a specific output power ad perfor a BER easureet. 5) Icrease or decrease the base statio output power as eeded, ad repeat step 5 util the lowest output power is foud that gives a BER value of.00% ± 0.%, see Aex E.9.. This correspods to thres,, S. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 6) Repeat step 4 ad 5 util a sufficiet uber of idepedet saples (see sectio 6..3) of easured. thres,, S has bee 7) Calculate TRS usig equatios fro chapter ) Steps ) to 7) are repeated for TCH/FS with ARFCNs i the Low ARFCN rage ad the High ARFCN rage. NOTE : The easureet procedure is based o saples of the received sigal power at the UE/MS fro a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power received by the DUT is udergoig Rayleigh fadig ad is trasitted by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TRS value Test requireets The average TRS of low, id ad high chael i beside head positio for TCH/FS at % class II (RBER) shall be lower tha test requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results of both right ad left side of the phato head. TRS average = 0log left / 0 _ /0 _ /0 _ /0 _ /0 _ / 0 0 _ low left id left high right low right id right high I additio the axiu TRS of each easured chael i beside head positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = 0log ax 0 ax left _ low /0 left _ id /0 left _ high /0 right _ low /0 right _ id /0 right _ high /0 [ (,0,0,0,0,0 )]

60 59 Table 6.3.: TRS test requireets for GSM roaig bads i the speech positio for the priary echaical ode Operatig Bad Uit <REFÎ or> Average Max GSM 850 db GSM 900 db E-GSM 900 db DCS 800 db CS 900 db Note : For ower Class ad 4 this shall be achieved at the axiu output power. Note : Applicable for dual-ode GSM/UMTS. Note 3: The test requireets for E-GSM 900 ad -GSM 900 are specified fro GSM 900 iiu requireets i table NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 6.4 Total Radiated Sesitivity (TRS) for TDD UE 6.4. Defiitio ad applicability The Total Radiated Sesitivity is defied as: TRS = EIS θ 4π + ( Ω; f ) EIS ϕ dω ( Ω; f ) Where the effective isotropic sesitivity (EIS) is defied as the power available at the atea output such as the sesitivity threshold is achieved for each polarizatio. Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. TRS π N M = 0 NM = + si 0 EISθ ( θ, ϕ; f ) EISϕ ( θ, ϕ; f ) ( θ ) I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 6... θ ad ϕ are the easureet The TRS ca also be calculated fro easureets i a Rayleigh fadig 3 diesioal isotropic eviroet with uifor elevatio ad aziuth distributio. The calculatio of the TRS is i this case based o searchig for the lowest power received by the UE/MS for a discrete uber of field cobiatios i the chaber The power received by the UE at each discrete field cobiatio that provides a BER (or BLER) which is better tha the specified target BER/BLER level shall be averaged with other such easureets usig differet field cobiatios. By calibratig the average power trasfer fuctio, a absolute value of the TRS ca be obtaied whe the liear values of all dowlik power levels described above have bee averaged. The followig expressio ca be used to fid the TRS. TRS N N = ( C ( R ) ) N = ref, thres,

61 60 where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.., is calculated by usig the followig equatio: thres thres, = M = S thres,, M thres S, where, is the :th value of the trasfer fuctio for fixed easureet atea, which gives the BER threshold. M is the total uber of values of the BER threshold power easured for each fixed easureet atea. The requireets ad this test apply to all types of UTRA for the TDD UE for Release 8 ad later releases Miiu requireets The average TRS of low, id ad high chael i beside head positio for % ± 0.% BER with.kbps DL referece chael as defied i Aex C.3 of TS5.0 [] shall be lower tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results of both right ad left side of the phato head. TRS average = 0log left / 0 _ /0 _ /0 _ /0 _ /0 _ / 0 0 _ low left id left high right low right id right high I additio the axiu TRS of each easured chael i beside head positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = 0log ax 0 ax left _ low /0 left _ id /0 left _ high /0 right _ low /0 right _ id /0 right _ high /0 [ (,0,0,0,0,0 )] Table 6.4.: TRS iiu requireet for UTRA LCR TDD roaig bads i the speech positio for the priary echaical ode Note: Operatig Bad Uit <REFÎor> - - Average Max a db/.8 MHz b db/.8 MHz TBD TBD c db/.8 MHz TBD TBD d db/.8 MHz TBD TBD e db/.8 MHz f db/.8 MHz Applicable for dual-ode GSM/UTRA LCR TDD. The orative referece for this clause is TS 5.44 sectio Test urpose TRS The purpose of this test is to esure that TRS average ad ax of the UE are above specified liit. The lack of the receptio sesitivity decreases the coverage area at the far side fro Node B.

62 Method of test Iitial coditios Test eviroet: oral; see TS34. [3] clause G... ) Set the SS dowlik physical chaels accordig to settigs i Table 6.4.A. The DL power level should be set to esure 0% BER at.kbps data rate at the whole 3D iitial sca. ) ower o the UE. 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. 4) Eter the UE ito loopback test ode ad start the loopback test. See TS [0] ad TS [] ad Aex C of TS 34.[3]. For details regardig geeric call setup procedure ad loopback test. Table 6.4.A: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower Ior -75 db DwCH DwCH_Ec / Ior = 0 db CCCH -CCCH_Ec / Ior = -3 db SCCCH S-CCCH_Ec / Ior = -6 db ICH ICH_Ec / Ior = -6 db FACH FACH_Ec / Ior = -6 db DL DCH DCH_Ec / Ior = 0 db Test procedure ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio the UE agaist the SAM phato. 4) Measure EIS fro oe easureet poit. EIS is the power trasitted fro oe specific directio to the UE causig BER value of % ± 0.% usig or ore bits, see Aex E.9.3. The DL power step size shall be o bigger tha 0.5dB whe the RF level is ear the TDD UE sesitivity level. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 5) Measure the EIS for every directio of selected saplig gird usig two orthogoal polarizatios to obtai TRS. 6) Calculate TRS usig equatios fro chapter 6.4. NOTE: To speed up sesitivity easureets o stadard settig (i.e. data speed, CL, BER target) ca be used i the easureets. However to obtai TRS result the easured EIS figures shall be oralized by ΔEIS = ( EISstd i EISstd i ) i= Where EISstd i is sesitivity easureet doe with stadard settig. EISstd i is sesitivity easureet doe with o stadard settigs. is aout of referece easureet poits. To esure accuracy of TRS, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie. The easureet procedure is based o the easureet of the spherical sesitivity patter of the DUT. The sesitivity values of the DUT at a predefied BER level are sapled i far field i a group of poits located o a

63 6 spherical surface eclosig the DUT. The EIS saples are take usig a costat saple step of 30 both i theta (θ) ad phi (φ) directios. All the EIS saples are take with two orthogoal polarizatios, θ - ad ϕ -polarisatios. The Total Radiated Sesitivity is calculated fro the easured data by equatio i chapter Test procedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio the UE agaist the SAM phato 4) Set the base statio siulator to a specific output power ad perfor a BER easureet. 5) Icrease or decrease the base statio output power as eeded, ad repeat step 5 util the lowest output power is foud that gives a BER value of % ± 0.% usig or ore bits, see Aex E.9.3. This correspods to S thres,,. The DL power step size shall be o bigger tha 0.5dB whe the RF level is ear the TDD UE sesitivity level. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 6) Repeat step 4 ad 5 util a sufficiet uber of idepedet saples (see sectio 6..3) of easured. thres,, S has bee 7) Calculate TRS usig equatios fro chapter 6.4. NOTE : The easureet procedure is based o saples of the received sigal power at the UE/MS fro a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power received by the DUT is udergoig Rayleigh fadig ad is trasitted by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TRS value Test requireets The average TRS of low, id ad high chael i beside head positio for % ± 0.% BER with.kbps DL referece chael as defied i Aex C.3 of TS5.0 [] shall be lower tha test requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results of both right ad left side of the phato head. TRS average = 0log left / 0 _ /0 _ /0 _ /0 _ /0 _ / 0 0 _ low left id left high right low right id right high I additio the axiu TRS of each easured chael i beside head positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = 0log ax 0 ax left _ low /0 left _ id /0 left _ high /0 right _ low /0 right _ id /0 right _ high /0 [ (,0,0,0,0,0 )]

64 63 Table 6.4.: TRS test requireet for UTRA LCR TDD roaig bads i the speech positio for the priary echaical ode Note: Operatig Bad Uit <REFÎor> - - Average Max a db/.8 MHz b db/.8 MHz TBD TBD c db/.8 MHz TBD TBD d db/.8 MHz TBD TBD e db/.8 MHz f db/.8 MHz Applicable for dual-ode GSM/UTRA LCR TDD. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 6.5 Total Radiated Sesitivity (TRS) for FDD UE usig LME Editor s ote: This test case is icoplete. The followig aspects are either issig or ot yet deteried: The TRS Miiu erforace Requireet for this test are udefied The Test Requireets ad related Test Toleraces applicable for this test are udefied 6.5. Defiitio ad applicability The Total Radiated Sesitivity (TRS) is a easure of the iiu power required to achieve a specified Bit Error Rate (BER). The TRS is defied as: TRS = 4π + dω EISθ ( Ω; f ) EISϕ ( Ω; f ) Where the effective isotropic sesitivity (EIS) is defied as the power available at the atea output such as the sesitivity threshold is achieved for each polarizatio. Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. TRS π N M = 0 NM = + si 0 EISθ ( θ, ϕ; f ) EISϕ ( θ, ϕ; f ) I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 6... ( θ ) θ ad ϕ are the easureet The TRS ca also be calculated fro easureets i a Rayleigh fadig 3 diesioal isotropic eviroet with i average uifor elevatio ad aziuth distributio. The calculatio of the TRS is i this case based o searchig for the lowest power received by the LME for a discrete uber of field cobiatios i the chaber that gives a BER that is better tha the specified target BER level. By calibratig the average power trasfer fuctio, a absolute value of the TRS ca be obtaied. The followig expressio ca be used to fid the TRS. TRS N N = ( C ( R ) ) N = ref, thres,

65 64 where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.., is calculated by usig the followig equatio: thres thres, = M = S thres,, M thres S, where, is the :th value of the trasfer fuctio for fixed easureet atea, which gives the BER threshold. M is the total uber of values of the BER threshold power easured for each fixed easureet atea. The requireets ad this test apply to all types of UTRA for the FDD UE for Release ad later releases that support LME. NOTE: This test case ca be optioally executed for Release 7 ad oward UE s supportig LME feature Miiu Requireets The average TRS of low, id ad high chael for % BER with.kbps DL referece chael as defied i Aex C.3 of TS5.0 [] shall be lower tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael shall be better tha iiu perforace requireets for roaig bads show i the colus Max. /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0 TRS = Table 6.5.: TRS iiu requireets for FDD LME devices i data trasfer positio Operatig Bad Uit <REFÎ or> Average Max I db/3.84 MHz TBD TBD II db/3.84 MHz TBD TBD III db/3.84 MHz TBD TBD IV db/3.84 MHz TBD TBD V db/3.84 MHz TBD TBD VI db/3.84 MHz TBD TBD VII db/3.84 MHz TBD TBD VIII db/3.84 MHz TBD TBD IX db/3.84 MHz TBD TBD IX db/3.84 MHz TBD TBD NOTE For ower Class 3, 3bis ad 4 this shall be achieved at the axiu output power. NOTE Applicable for dual-ode GSM/UMTS. NOTE 3 Applicable for USB plug-i devices. The orative referece for this clause is TS5.44 [] sectio

66 Test purpose The purpose of this test is to esure that TRS average ad TRS ax of the UE is above specified liit. The lack of the receptio sesitivity decreases the coverage area at the far side fro Node B Method of test Iitial coditios Test eviroet: oral; see TS 34.- [3] clause G... ) Set the SS dowlik physical chaels accordig to settigs i Table ) Coect the plug-i UE to a laptop groud plae phato. ower o the plug-i UE. The real fuctioal laptop supplies power to the plug-i UE. 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. Copressed ode shall be set to OFF. 4) Eter the UE ito loopback test ode ad start the loopback test. See TS [0] ad TS [] for details regardig geeric call setup procedure ad loopback test. Table 6.5.: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower CICH CICH_Ec / DCH_Ec = 7 db -CCCH -CCCH_Ec/ DCH_Ec = 5 db SCH SCH_Ec / DCH_Ec = 5 db ICH ICH_Ec / DCH_Ec = db DCH Test depedet power rocedure ) Sed cotiuously Up power cotrol coads to the plug-i UE. ) As the plug-i UE reaches axiu power, start sedig N5 data patter. 3) ositio the plug-i UE ito the USB coector i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio positio the plug-i UE so that it is horizotally plugged ito the horizotal USB coector. 4) Measure EIS fro oe easureet poit. EIS is the power trasitted fro oe specific directio to the plugi UE causig BER value of % ± 0.% usig 0000 or ore bits, see Aex E.9.. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 5) Measure the EIS for every directio of selected saplig gird usig two orthogoal polarizatios to obtai TRS. 6) Calculate TRS usig equatios fro clause 6.5. NOTE: To speed up sesitivity easureets o stadard settig (i.e. data speed, CL, BER target) ca be used i the easureets. However to obtai TRS result the easured EIS figures shall be oralized by ΔEIS = ( EISstd i EISstd i ) i= Where EISstd i is sesitivity easureet doe with stadard settig. with o stadard settigs. is aout of referece easureet poits. EISstd i is sesitivity easureet doe

67 66 To esure accuracy of TRS, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie. The easureet procedure is based o the easureet of the spherical sesitivity patter of the DUT. The sesitivity values of the DUT at a predefied BER level are sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIS saples are take usig a costat saple step of 30 both i theta (θ) ad phi (φ) directios. All the EIS saples are take with two orthogoal polarizatios, θ - ad ϕ -polarisatios. The Total Radiated Sesitivity is calculated fro the easured data by equatio i clause Test procedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the plug-i UE. ) As the plug-i UE reaches axiu power, start sedig N5 data patter. 3) ositio the plug-i UE ito the USB coector i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio positio the plug-i UE so that it is horizotally plugged ito the horizotal USB coector. 4) Set the base statio siulator to a specific output power ad perfor a BER easureet. 5) Icrease or decrease the base statio output power as eeded, ad repeat step 5 util the lowest output power is foud that gives a BER value of % ± 0.% usig 0000 or ore bits, see Aex E.9.. This correspods to thres,, S. NOTE : To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 6) Repeat step 4 ad 5 util a sufficiet uber of idepedet saples (see sectio 6..3) of easured. thres,, S has bee 7) Calculate TRS usig equatios fro clause 6.5. NOTE : The easureet procedure is based o saples of the received sigal power at the UE/MS fro a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power received by the DUT is udergoig Rayleigh fadig ad is trasitted by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TRS value Test requireets The average TRS of low, id ad high chael for % BER with.kbps DL referece chael as defied i Aex C.3 of [] shall be lower tha test requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0

68 67 Table 6.5.3: TRS test requireets for FDD LME devices i data trasfer positio Operatig Bad Uit <REFÎ or> Average Max I db/3.84 MHz TBD + TT TBD + TT II db/3.84 MHz TBD + TT TBD + TT III db/3.84 MHz TBD + TT TBD + TT IV db/3.84 MHz TBD + TT TBD + TT V db/3.84 MHz TBD + TT TBD + TT VI db/3.84 MHz TBD + TT TBD + TT VII db/3.84 MHz TBD + TT TBD + TT VIII db/3.84 MHz TBD + TT TBD + TT IX db/3.84 MHz TBD + TT TBD + TT XIX db/3.84 MHz TBD + TT TBD + TT NOTE For ower Class 3, 3bis ad 4 this shall be achieved at the axiu output power. NOTE Applicable for dual-ode GSM/UMTS. NOTE 3 Applicable for USB plug-i devices. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 6.6 Total Radiated Sesitivity (TRS) for GSM MS usig LME Editor s ote: This test case is ot copleted Miiu Requireets are issig Test requireets ad related TT are issig 6.6. Defiitio ad applicability The Total Radiated Sesitivity is defied as: TRS = 4π + dω EISθ ( Ω; f ) EISϕ ( Ω; f ) Where the effective isotropic sesitivity (EIS) is defied as the power available at the atea output such as the sesitivity threshold is achieved for each polarizatio. Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. TRS π N M = 0 NM = + si 0 EISθ ( θ, ϕ; f ) EISϕ ( θ, ϕ; f ) I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio ( θ ) θ ad ϕ are the easureet The TRS ca also be calculated fro easureets i a Rayleigh fadig 3 diesioal isotropic eviroet with uifor elevatio ad aziuth distributio. The calculatio of the TRS is i this case based o searchig for the lowest power received by the LME for a discrete uber of field cobiatios i the chaber The power received by the UE at each discrete field cobiatio that provides a BLER which is better tha the specified target BLER level shall be averaged with other such easureets usig differet field cobiatios. By calibratig the average power trasfer fuctio, a absolute value of the TRS ca be obtaied whe the liear values of all dowlik power levels described above have bee averaged. The followig expressio ca be used to fid the TRS.

69 68 TRS N N = ( C ( R ) ) N = ref, thres, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.., is calculated by usig the followig equatio: thres thres, = M = S thres,, M thres S, where, is the :th value of the trasfer fuctio for fixed easureet atea, which gives the BLER threshold. M is the total uber of values of the BLER threshold power easured for each fixed easureet atea. The requireets ad this test apply to all types of LME that support GSM for Release ad later releases. NOTE: This test case ca be optioally executed for Release 7 ad oward MS s supportig LME feature Miiu requireets The average TRS of low, id ad high chael of the LME i the data trasfers positio for GRS DTCH/CS at 0% BLER shall be lower tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael i the data trasfers positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0 Table 6.6.: TRS iiu requireets for GSM LME devices i data trasfers positio Operatig Bad Uit <REFÎ or> Average Max GSM 850 db TBD TBD GSM 900 db TBD TBD DCS 800 db TBD TBD CS 900 db TBD TBD NOTE : For ower Class ad 4 this shall be achieved at the axiu output power. NOTE : Applicable for dual-ode GSM/UMTS. NOTE 3: Applicable for USB plug-i devices. The orative referece for this clause is TS5.44 sectio 73...

70 Test urpose The purpose of this test is to esure that TRS Average ad TRS ax of the MS is above specified liit. The lack of the receptio sesitivity decreases the coverage area at the far side fro Base Statio Method of test Iitial coditios Test eviroet: oral coditio; see TS5.00- [9] Aex A... A call is set up accordig to the procedure o a GRS DTCH/CS with a ARFCN i the Mid ARFCN rage, power cotrol level set to axiu power. The SS trasits Stadard Test Sigal C o the traffic chael, see TS5.00- [9] Aex A5.. The SS coads the MS to create traffic chael loop back, see TS44.04 [34] clause 5.4. The LME shall be tested usig the Laptop Groud lae hato as described i Aex A Test procedure ) ositio the LME usig the Laptop Groud lae hato described i Aex A.. ad accordig to DUT positioig described i clause 6... ) The SS copares the data of the sigal that it seds to the MS with the sigal which is looped back fro the receiver after deodulatio ad decodig. 3) The SS deteries the uber of block error evets, by exaiig sequeces of at least the iiu uber of saples of cosecutive blocks. 4) Measure EIS fro oe easureet poit. EIS is the power trasitted fro oe specific directio to the MS causig BLER value of 0% ± %, see Aex E. 9. NOTE: To eet BLER value target DL power level ca be chaged usig user s freely selectable algorith. 5) Measure the EIS for every directio of selected saplig gird usig two orthogoal polarizatios to obtai TRS. 6) Calculate TRS usig equatios fro clause ) Steps ) to 6) are repeated for GRS DTCH/CS with ARFCNs i the Low ARFCN rage ad the High ARFCN rage. NOTE : No stadard settigs: To speed up sesitivity easureets o stadard settig (i.e. data speed, CL, BLER target) ca be used i the easureets. However to obtai TRS result the easured EIS figures shall be oralized by ΔEIS = ( EISstd i EISstd i ) i= Where EISstd i is sesitivity easureet doe with stadard settig. with o stadard settigs. is aout of referece easureet poits. EISstd i is sesitivity easureet doe To esure accuracy of TRS, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie. The easureet procedure is based o the easureet of the spherical sesitivity patter of the DUT. The sesitivity values of the DUT at a predefied BLER level are sapled i far field i a group of poits located o a closed surface eclosig the DUT. The EIS saples are take usig a costat saple step of 30 both i theta (θ)

71 70 ad phi (φ) directios. All the EIS saples are take with two orthogoal polarizatios, θ - ad ϕ -polarisatios. The Total Radiated Sesitivity is calculated fro the easured data by equatio i clause Test procedure, reverberatio chaber ethod ) ositio the LME usig the Laptop Groud lae hato described i aex A.. ad accordig to DUT positioig described i clause 6.. ) The SS copares the data of the sigal that it seds to the MS with the sigal which is looped back fro the receiver after deodulatio ad decodig. 3) The SS deteries the uber of block error evets, by exaiig sequeces of at least the iiu uber of saples of cosecutive blocks. 4) Set the base statio siulator to a specific output power ad perfor a BLER easureet. 5) Icrease or decrease the base statio output power as eeded, ad repeat step 5 util the lowest output power is foud that gives a BLER value of 0% ± %, see Aex E.9.. This correspods to thres,, S. NOTE: To eet BLER value target DL power level ca be chaged usig user s freely selectable algorith. 6) Repeat step 4 ad 5 util a sufficiet uber of idepedet saples (see sectio 6..3) of easured. thres,, S has bee 7) Calculate TRS usig equatios fro clause ) Steps ) to 7) are repeated for GRS DTCH/CS with ARFCNs i the Low ARFCN rage ad the High ARFCN rage. NOTE : The easureet procedure is based o saples of the received sigal power at the UE/MS fro a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power received by the DUT is udergoig Rayleigh fadig ad is trasitted by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TRS value Test requireets The average TRS of low, id ad high chael i the data trasfers positio for GRS DTCH/CS at 0% BLER shall be lower tha test requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael i the data trasfers positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0

72 7 Table 6.6.: TRS test requireets for GSM LME devices i data trasfers positio Operatig Bad Uit <REFÎ or> Average Max GSM 850 db TBD TBD GSM 900 db TBD TBD DCS 800 db TBD TBD CS 900 db TBD TBD NOTE : For ower Class ad 4 this shall be achieved at the axiu output power. NOTE : Applicable for dual-ode GSM/UMTS. NOTE 3: Applicable for USB plug-i devices. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 6.7 Total Radiated Sesitivity (TRS) for TDD UE usig LME Editor s ote: This test case is icoplete. The followig aspects are either issig or ot yet deteried: The TR Miiu erforace Requireet for this test are udefied The Test Requireets ad related Test Toleraces applicable for this test are udefied 6.7. Defiitio ad applicability The Total Radiated Sesitivity (TRS) is a easure of the iiu power required to achieve a specified Bit Error Rate (BER). The TRS is defied as: TRS = 4π + dω EISθ ( Ω; f ) EISϕ ( Ω; f ) Where the effective isotropic sesitivity (EIS) is defied as the power available at the atea output such as the sesitivity threshold is achieved for each polarizatio. Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. TRS π N M = 0 NM = + si 0 EISθ ( θ, ϕ; f ) EISϕ ( θ, ϕ; f ) I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 6... ( θ ) θ ad ϕ are the easureet The TRS ca also be calculated fro easureets i a Rayleigh fadig 3 diesioal isotropic eviroet with uifor elevatio ad aziuth distributio. The calculatio of the TRS is i this case based o searchig for the lowest power received by the UE/MS for a discrete uber of field cobiatios i the chaber The power received by the UE at each discrete field cobiatio that provides a BER which is better tha the specified target BER level shall be averaged with other such easureets usig differet field cobiatios. By calibratig the average power trasfer fuctio, a absolute value of the TRS ca be obtaied whe the liear values of all dowlik power levels described above have bee averaged. The followig expressio ca be used to fid the TRS.

73 7 TRS N N = ( C ( R ) ) N = ref, thres, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.., is calculated by usig the followig equatio: thres thres, = M = S thres,, M thres S, where, is the :th value of the trasfer fuctio for fixed easureet atea, which gives the BER threshold. M is the total uber of values of the BER threshold power easured for each fixed easureet atea. The requireets ad this test apply to all types of UTRA for the TDD UE for Release ad later releases that support LME. NOTE: This test case ca be optioally executed for Release 7 ad oward UE s supportig LME feature Miiu Requireets The average TRS of low, id ad high chael for % BER with.kbps DL referece chael as defied i Aex C.3 of TS 34. [3] shall be lower tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0 Table 6.7.: TRS iiu requireets for TDD LME devices i data trasfer positio Operatig Bad Uit <REFÎor> - - Average Max a db/.8 MHz TBD TBD b db/.8 MHz TBD TBD c db/.8 MHz TBD TBD d db/.8 MHz TBD TBD e db/.8 MHz TBD TBD f db/.8 MHz TBD TBD NOTE : Applicable for dual-ode GSM/UTRA LCR TDD. NOTE : Applicable for USB plug-i devices. The orative referece for this clause is TS5.44 [] sectio

74 Test purpose The purpose of this test is to esure that TRS average ad TRS ax of the UE is above specified liit. The lack of the receptio sesitivity decreases the coverage area at the far side fro Node B Method of test Iitial coditios Test eviroet: oral; see TS34. [3] clause G... ) Set the SS dowlik physical chaels accordig to settigs i Table The DL power level should be set to esure 0% BER at.kbps data rate at the whole 3D iitial sca. ) Coect the plug-i UE to a laptop groud plae phato. ower o the plug-i UE. The real fuctioal laptop supplies power to the plug-i UE. 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. 4) Eter the UE ito loopback test ode ad start the loopback test. See TS [0] ad TS [] ad Aex C of TS 34.[3]. For details regardig geeric call setup procedure ad loopback test. Table 6.7.: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower Ior -75 db DwCH DwCH_Ec / Ior = 0 db CCCH -CCCH_Ec / Ior = -3 db SCCCH S-CCCH_Ec / Ior = -6 db ICH ICH_Ec / Ior = -6 db FACH FACH_Ec / Ior = -6 db DL DCH DCH_Ec / Ior = 0 db rocedure ) Sed cotiuously Up power cotrol coads to the plug-i UE. ) As the plug-i UE reaches axiu power, start sedig N5 data patter. 3) ositio the plug-i UE ito the USB coector i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio positio the plug-i UE so that it is horizotally plugged ito the horizotal USB coector. 4) Measure EIS fro oe easureet poit. EIS is the power trasitted fro oe specific directio to the UE causig BER value of % ± 0.% usig or ore bits, see Aex E.9.3. The DL power step size shall be o bigger tha 0.5dB whe the RF level is ear the TDD UE sesitivity level. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 5) Measure the EIS for every directio of selected saplig gird usig two orthogoal polarizatios to obtai TRS. 6) Calculate TRS usig equatios fro clause 6.7. NOTE: To speed up sesitivity easureets o stadard settig (i.e. data speed, CL, BER target) ca be used i the easureets. However to obtai TRS result the easured EIS figures shall be oralized by ΔEIS = ( EISstd i EISstd i ) i=

75 74 Where EISstd i is sesitivity easureet doe with stadard settig. with o stadard settigs. is aout of referece easureet poits. EISstd i is sesitivity easureet doe To esure accuracy of TRS, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie. The easureet procedure is based o the easureet of the spherical sesitivity patter of the DUT. The sesitivity values of the DUT at a predefied BER level are sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIS saples are take usig a costat saple step of 30 both i theta (θ) ad phi (φ) directios. All the EIS saples are take with two orthogoal polarizatios, θ - ad ϕ -polarisatios. The Total Radiated Sesitivity is calculated fro the easured data by equatio i clause Test procedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the plug-i UE. ) As the plug-i UE reaches axiu power, start sedig N5 data patter. 3) ositio the plug-i UE ito the USB coector i accordace with the aufacturer recoeded priary echaical ode. I the absece of such a recoedatio positio the plug-i UE so that it is horizotally plugged ito the horizotal USB coector. 4) Set the base statio siulator to a specific output power ad perfor a BER easureet. 5) Icrease or decrease the base statio output power as eeded, ad repeat step 5 util the lowest output power is foud that gives a BER value of % ± 0.% usig or ore bits, see Aex E.9.3. This correspods to S thres,,. The DL power step size shall be o bigger tha 0.5dB whe the RF level is ear the TDD UE sesitivity level. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 6) Repeat step 4 ad 5 util a sufficiet uber of idepedet saples (see sectio 6..3) of easured. thres,, S has bee 7) Calculate TRS usig equatios fro clause 6.7. NOTE : The easureet procedure is based o saples of the received sigal power at the UE/MS fro a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power received by the DUT is udergoig Rayleigh fadig ad is trasitted by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TRS value Test requireets The average TRS of low, id ad high chael for % BER with.kbps DL referece chael as defied i Aex C.3 of TS 34. [3] shall be lower tha test requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0

76 75 Table 6.7.3: TRS test requireets for TDD LME devices i data trasfer positio Operatig Bad Uit <REFÎor> - - Average Max a db/.8 MHz TBD + TT TBD + TT b db/.8 MHz TBD + TT TBD + TT c db/.8 MHz TBD + TT TBD + TT d db/.8 MHz TBD + TT TBD + TT e db/.8 MHz TBD + TT TBD + TT f db/.8 MHz TBD + TT TBD + TT NOTE : Applicable for dual-ode GSM/UTRA LCR TDD. NOTE : Applicable for USB plug-i devices. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 6.8 Total Radiated Sesitivity (TRS) for FDD UE usig LEE Editor s ote: This test case is ot copleted Miiu Requireets are issig Test requireets ad related TT are issig 6.8. Defiitio ad applicability The Total Radiated Sesitivity is defied as: TRS = 4π + dω EISθ ( Ω; f ) EISϕ ( Ω; f ) Where the effective isotropic sesitivity (EIS) is defied as the power available at the atea output such as the sesitivity threshold is achieved for each polarizatio. Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. TRS π N M = 0 NM = + si 0 EISθ ( θ, ϕ; f ) EISϕ ( θ, ϕ; f ) I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 6... ( θ ) θ ad ϕ are the easureet The TRS ca also be calculated fro easureets i a Rayleigh fadig 3 diesioal isotropic eviroet with i average uifor elevatio ad aziuth distributio. The calculatio of the TRS is i this case based o searchig for the lowest power received by the LEE for a discrete uber of field cobiatios i the chaber that gives a BER that is better tha the specified target BER level. By calibratig the average power trasfer fuctio, a absolute value of the TRS ca be obtaied. The followig expressio ca be used to fid the TRS. TRS N N = ( C ( R ) ) N = ref, thres,

77 76 where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.., is calculated by usig the followig equatio: thres thres, = M = S thres,, M thres S, where, is the :th value of the trasfer fuctio for fixed easureet atea, which gives the BER threshold. M is the total uber of values of the BER threshold power easured for each fixed easureet atea. The requireets ad this test apply to all types of UTRA for the FDD UE for Release ad later releases that support LEE. NOTE: This test case ca be optioally executed for Release 7 ad oward UE s supportig LEE feature Miiu requireets The average TRS of low, id ad high chael of the LEE i the data trasfers positio for % BER with.kbps DL referece chael as defied i Aex C.3 of TS5.0 [] shall be lower tha iiu perforace requireets for roaig bads show i Table 68.. The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael i the data trasfers positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0 Table 6.8.: TRS iiu requireets for LEE devices i data trasfer positio Operatig Bad Uit <REFÎ or> Average Max I db/3.84 MHz TBD TBD II db/3.84 MHz TBD TBD III db/3.84 MHz TBD TBD IV db/3.84 MHz TBD TBD V db/3.84 MHz TBD TBD VI db/3.84 MHz TBD TBD VII db/3.84 MHz TBD TBD VIII db/3.84 MHz TBD TBD IX db/3.84 MHz TBD TBD XIX db/3.84 MHz TBD TBD NOTE For ower Class 3, 3bis ad 4 this shall be achieved at the axiu output power. NOTE Applicable for dual-ode GSM/UMTS. NOTE 3 Applicable for otebook devices. The orative referece for this clause is TS5.44 sectio 7.3..

78 Test urpose The purpose of this test is to esure that TRS Average ad TRS ax of the UE is above specified liit. The lack of the receptio sesitivity decreases the coverage area at the far side fro Node B Method of test Iitial coditios Test eviroet: oral; see TS34.- [3] clause G... ) Set the SS dowlik physical chaels accordig to settigs i Table ) ower o the UE. 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. Copressed ode shall be set to OFF. 4) Eter the UE ito loopback test ode ad start the loopback test. See TS [0] ad TS [] for details regardig geeric call setup procedure ad loopback test. Table 6.8.: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower CICH CICH_Ec / DCH_Ec = 7 db -CCCH -CCCH_Ec/ DCH_Ec = 5 db SCH SCH_Ec / DCH_Ec = 5 db ICH ICH_Ec / DCH_Ec = db DCH Test depedet power The LEE shall be tested accordig to DUT positioig described i chapter Test procedure ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio ad cofigure the LEE accordig to chapter 6.. 4) Measure EIS fro oe easureet poit. EIS is the power trasitted fro oe specific directio to the UE causig BER value of % ± 0.% usig 0000 or ore bits, see Aex E.9.. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 5) Measure the EIS for every directio of selected saplig gird usig two orthogoal polarizatios to obtai TRS. 6) Calculate TRS usig equatios fro chapter 6.8. NOTE: To speed up sesitivity easureets o stadard settig (i.e. data speed, CL, BER target) ca be used i the easureets. However to obtai TRS result the easured EIS figures shall be oralized by ΔEIS = ( EISstd i EISstd i ) i= Where EISstd i is sesitivity easureet doe with stadard settig. with o stadard settigs. is aout of referece easureet poits. EISstd i is sesitivity easureet doe To esure accuracy of TRS, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie.

79 78 The easureet procedure is based o the easureet of the spherical sesitivity patter of the DUT. The sesitivity values of the DUT at a predefied BER level are sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIS saples are take usig a costat saple step of 30 both i theta (θ) ad phi (φ) directios. All the EIS saples are take with two orthogoal polarizatios, θ - ad ϕ -polarisatios. The Total Radiated Sesitivity is calculated fro the easured data by equatio i chapter Test procedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio ad cofigure the LEE accordig to chapter 6..4) Set the base statio siulator to a specific output power ad perfor a BER easureet. 5) Icrease or decrease the base statio output power as eeded, ad repeat step 5 util the lowest output power is foud that gives a BER value of % ± 0.% usig 0000 or ore bits, see Aex E.9.. This correspods to thres,, S. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 6) Repeat step 4 ad 5 util a sufficiet uber of idepedet saples (see sectio 6..3) of easured. thres,, S has bee 7) Calculate TRS usig equatios fro chapter 6.8. NOTE : The easureet procedure is based o saples of the received sigal power at the UE/MS fro a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power received by the DUT is udergoig Rayleigh fadig ad is trasitted by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TRS value Test requireets The average TRS of low, id ad high chael i the data trasfers positio for % BER with.kbps DL referece chael as defied i Aex C.3 of [] shall be lower tha test requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael i the data trasfers positio shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0

80 79 Table 6.8.3: TRS test requireets for LEE devices i data trasfer positio Operatig Bad Uit <REFÎ or> Average Max I db/3.84 MHz TBD TBD II db/3.84 MHz TBD TBD III db/3.84 MHz TBD TBD IV db/3.84 MHz TBD TBD V db/3.84 MHz TBD TBD VI db/3.84 MHz TBD TBD VII db/3.84 MHz TBD TBD VIII db/3.84 MHz TBD TBD IX db/3.84 MHz TBD TBD XIX db/3.84 MHz TBD TBD NOTE For ower Class 3, 3bis ad 4 this shall be achieved at the axiu output power. NOTE Applicable for dual-ode GSM/UMTS. NOTE 3 Applicable for otebook devices. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 6.9 Total Radiated Sesitivity (TRS) for GSM MS usig LEE Editor s ote: This test case is ot copleted Miiu Requireets are issig Test requireets ad related TT are issig 6.9. Defiitio ad applicability The Total Radiated Sesitivity is defied as: TRS = 4π + dω EISθ ( Ω; f ) EISϕ ( Ω; f ) Where the effective isotropic sesitivity (EIS) is defied as the power available at the atea output such as the sesitivity threshold is achieved for each polarizatio. Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. TRS π N M = 0 NM = + si 0 EISθ ( θ, ϕ; f ) EISϕ ( θ, ϕ; f ) I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio ( θ ) θ ad ϕ are the easureet The TRS ca also be calculated fro easureets i a Rayleigh fadig 3 diesioal isotropic eviroet with uifor elevatio ad aziuth distributio. The calculatio of the TRS is i this case based o searchig for the lowest power received by the LEE for a discrete uber of field cobiatios i the chaber The power received by the UE at each discrete field cobiatio that provides a BLER which is better tha the specified target BLER level shall be averaged with other such easureets usig differet field cobiatios. By calibratig the average power trasfer fuctio, a absolute value of the TRS ca be obtaied whe the liear values of all dowlik power levels described above have bee averaged. The followig expressio ca be used to fid the TRS.

81 80 TRS N N = ( C ( R ) ) N = ref, thres, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.., is calculated by usig the followig equatio: thres thres, = M = S thres,, M thres S, where, is the :th value of the trasfer fuctio for fixed easureet atea, which gives the BLER threshold. M is the total uber of values of the BLER threshold power easured for each fixed easureet atea. The requireets ad this test apply to all types of LEE that support GSM for Release ad later releases. NOTE: This test case ca be optioally executed for Release 7 ad oward MS s supportig LEE feature Miiu requireets The average TRS of low, id ad high chael of the LME i the data trasfers positio for GRS DTCH/CS at 0% BLER shall be lower tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the iiu TRS of each easured chael i the data trasfers positio shall be better tha iiu perforace requireets for roaig bads show i the colus Mi. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0 Table 6.9.: TRS iiu requireets for GSM LEE devices i data trasfer positio Operatig Bad Uit <REFÎ or> Average Max GSM 850 db TBD TBD GSM 900 db TBD TBD DCS 800 db TBD TBD CS 900 db TBD TBD NOTE : For ower Class ad 4 this shall be achieved at the axiu output power. NOTE : Applicable for dual-ode GSM/UMTS. NOTE 3: Applicable for otebook devices. The orative referece for this clause is TS5.44 sectio

82 Test urpose The purpose of this test is to esure that TRS Average ad TRS Mi of the MS is above specified liit. The lack of the receptio sesitivity decreases the coverage area at the far side fro Base Statio Method of test Iitial coditios Test eviroet: oral coditio; see TS5.00- [9] Aex A... A call is set up accordig to the procedure o GRS DTCH/CS with a ARFCN i the Mid ARFCN rage, power cotrol level set to axiu power. The SS trasits Stadard Test Sigal C o the traffic chael, see TS5.00- [9] Aex A5.. The SS coads the MS to create traffic chael loop back, see TS44.04 [34] clause 5.4. The LEE shall be tested accordig to DUT positioig described i clause Test procedure ) ositio ad cofigure the LEE accordig to clause 6.. ) The SS copares the data of the sigal that it seds to the MS with the sigal which is looped back fro the receiver after deodulatio ad decodig. 3) The SS deteries the uber of block error evets, by exaiig sequeces of at least the iiu uber of saples of cosecutive blocks. 4) Measure EIS fro oe easureet poit. EIS is the power trasitted fro oe specific directio to the MS causig BLER value of 0% ± %, see Aex E. 9. NOTE: To eet BLER value target DL power level ca be chaged usig user s freely selectable algorith. 5) Measure the EIS for every directio of selected saplig gird usig two orthogoal polarizatios to obtai TRS. 6) Calculate TRS usig equatios fro clause ) Steps ) to 6) are repeated for GRS DTCH/CS with ARFCNs i the Low ARFCN rage ad the High ARFCN rage. NOTE : No stadard settigs: To speed up sesitivity easureets o stadard settig (i.e. data speed, CL, BLER target) ca be used i the easureets. However to obtai TRS result the easured EIS figures shall be oralized by ΔEIS = ( EISstd i EISstd i ) i= Where EISstd i is sesitivity easureet doe with stadard settig. with o stadard settigs. is aout of referece easureet poits. EISstd i is sesitivity easureet doe To esure accuracy of TRS, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie. The easureet procedure is based o the easureet of the spherical sesitivity patter of the DUT. The sesitivity values of the DUT at a predefied BLER level are sapled i far field i a group of poits located o a closed surface eclosig the DUT. The EIS saples are take usig a costat saple step of 30 both i theta (θ) ad phi (φ) directios. All the EIS saples are take with two orthogoal polarizatios, θ - ad ϕ -polarisatios. The Total Radiated Sesitivity is calculated fro the easured data by equatio i clause 6.9..

83 Test procedure, reverberatio chaber ethod ) ositio ad cofigure the LEE accordig to clause 6.. ) The SS copares the data of the sigal that it seds to the MS with the sigal which is looped back fro the receiver after deodulatio ad decodig. 3) The SS deteries the uber of block error evets, by exaiig sequeces of at least the iiu uber of saples of cosecutive blocks. 4) Set the base statio siulator to a specific output power ad perfor a BLER easureet. 5) Icrease or decrease the base statio output power as eeded, ad repeat step 5 util the lowest output power is foud that gives a BLER value of 0% ± %, see Aex E.9.. This correspods to thres,, S. NOTE: To eet BLER value target DL power level ca be chaged usig user s freely selectable algorith. 6) Repeat step 4 ad 5 util a sufficiet uber of idepedet saples (see sectio 6..3) of easured. thres,, S has bee 7) Calculate TRS usig equatios fro clause ) Steps ) to 7) are repeated for GRS DTCH/CS with ARFCNs i the Low ARFCN rage ad the High ARFCN rage. NOTE : The easureet procedure is based o saples of the received sigal power at the UE/MS fro a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power received by the DUT is udergoig Rayleigh fadig ad is trasitted by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TRS value Test requireets The average TRS of low, id ad high chael i the data trasfers positio for GRS DTCH/CS at 0% BLER shall be lower tha test requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the iiu TRS of each easured chael i the data trasfers positio shall be better tha iiu perforace requireets for roaig bads show i the colus Mi. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0 Table 6.9.: TRS test requireets for GSM LEE devices i data trasfer positio Operatig Bad Uit <REFÎ or> Average Max GSM 850 db TBD TBD GSM 900 db TBD TBD DCS 800 db TBD TBD CS 900 db TBD TBD NOTE : For ower Class ad 4 this shall be achieved at the axiu output power. NOTE : Applicable for dual-ode GSM/UMTS. NOTE 3: Applicable for otebook devices.

84 83 NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D. 6.0 Total Radiated Sesitivity (TRS) for TDD UE usig LEE Editor s ote: This test case is icoplete. The followig aspects are either issig or ot yet deteried: The TR Miiu erforace Requireet for this test are udefied The Test Requireets ad related Test Toleraces applicable for this test are udefied 6.0. Defiitio ad applicability The Total Radiated Sesitivity (TRS) is a easure of the iiu power required to achieve a specified Bit Error Rate (BER). The TRS is defied as: TRS = 4π + dω EISθ ( Ω; f ) EISϕ ( Ω; f ) Where the effective isotropic sesitivity (EIS) is defied as the power available at the atea output such as the sesitivity threshold is achieved for each polarizatio. Ω is the solid agle describig the directio, f is frequecy. θ ad ϕ are the orthogoal polarizatios. TRS π N M = 0 NM = + si 0 EISθ ( θ, ϕ; f ) EISϕ ( θ, ϕ; f ) I these forulas N ad M are the uber of saplig itervals for theta ad phi. agles. The saplig itervals are discussed further i Sectio 6... ( θ ) θ ad ϕ are the easureet The TRS ca also be calculated fro easureets i a Rayleigh fadig 3 diesioal isotropic eviroet with uifor elevatio ad aziuth distributio. The calculatio of the TRS is i this case based o searchig for the lowest power received by the UE/MS for a discrete uber of field cobiatios i the chaber The power received by the UE at each discrete field cobiatio that provides a BER which is better tha the specified target BER level shall be averaged with other such easureets usig differet field cobiatios. By calibratig the average power trasfer fuctio, a absolute value of the TRS ca be obtaied whe the liear values of all dowlik power levels described above have bee averaged. The followig expressio ca be used to fid the TRS. TRS N N = ( C ( R ) ) N = ref, thres, where ref, is the referece power trasfer fuctio for fixed easureet atea, R is the reflectio coefficiet for fixed easureet atea ad C is the path loss i the cables coectig the easureet receiver to fixed easureet atea. These paraeters are calculated fro the calibratio easureet ad are further discussed i Aex B.., is calculated by usig the followig equatio: thres thres, = M = S thres,, M

85 84 thres S, where, is the :th value of the trasfer fuctio for fixed easureet atea, which gives the BER threshold. M is the total uber of values of the BER threshold power easured for each fixed easureet atea. The requireets ad this test apply to all types of UTRA for the TDD UE for Release ad later releases that support LEE. Note: This test case ca be optioally executed for Release 7 ad oward UE s supportig LEE feature Miiu Requireets The average TRS of low, id ad high chael for % BER with.kbps DL referece chael as defied i Aex C.3 of TS 34. [3] shall be lower tha iiu perforace requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael shall be better tha iiu perforace requireets for roaig bads show i the colus Mi. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0 Table 6.0.: TRS iiu requireets for TDD LEE devices i data trasfer positio Operatig Bad Uit <REFÎor> - - Average Max a db/.8 MHz TBD TBD b db/.8 MHz TBD TBD c db/.8 MHz TBD TBD d db/.8 MHz TBD TBD e db/.8 MHz TBD TBD f db/.8 MHz TBD TBD NOTE : Applicable for dual-ode GSM/UTRA LCR TDD. NOTE : Applicable for otebook devices. The orative referece for this clause is TS5.44 [] sectio Test purpose The purpose of this test is to esure that TRS average ad TRS ax of the UE is above specified liit. The lack of the receptio sesitivity decreases the coverage area at the far side fro Node B Method of test Iitial coditios Test eviroet: oral; see TS34. [3] clause G... ) Set the SS dowlik physical chaels accordig to settigs i Table The DL power level should be set to esure 0% BER at.kbps data rate at the whole 3D iitial sca. ) ower o the LEE UE. 3) A call is set up accordig to the Geeric call setup procedure. The power cotrol algorith shall be set to ower Cotrol Algorith. 4) Eter the UE ito loopback test ode ad start the loopback test.

86 85 See TS [0] ad TS [] ad Aex C of TS 34.[3]. For details regardig geeric call setup procedure ad loopback test. Table 6.0.: Dowlik hysical Chaels trasitted durig a coectio hysical Chael ower Ior -75 db DwCH DwCH_Ec / Ior = 0 db CCCH -CCCH_Ec / Ior = -3 db SCCCH S-CCCH_Ec / Ior = -6 db ICH ICH_Ec / Ior = -6 db FACH FACH_Ec / Ior = -6 db DL DCH DCH_Ec / Ior = 0 db rocedure ) Sed cotiuously Up power cotrol coads to the LEE UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio ad cofigure the LEE accordig to clause 5.. 4) Measure EIS fro oe easureet poit. EIS is the power trasitted fro oe specific directio to the UE causig BER value of % ± 0.% usig or ore bits, see Aex E.9.3. The DL power step size shall be o bigger tha 0.5dB whe the RF level is ear the TDD UE sesitivity level. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 5) Measure the EIS for every directio of selected saplig gird usig two orthogoal polarizatios to obtai TRS. 6) Calculate TRS usig equatios fro clause 6.7. NOTE: To speed up sesitivity easureets o stadard settig (i.e. data speed, CL, BER target) ca be used i the easureets. However to obtai TRS result the easured EIS figures shall be oralized by ΔEIS = ( EISstd i EISstd i ) i= Where EISstd i is sesitivity easureet doe with stadard settig. with o stadard settigs. is aout of referece easureet poits. EISstd i is sesitivity easureet doe To esure accuracy of TRS, the aout of referece poits easured should be at least 4. It is recoeded to spread the referece easureets equally durig the easureet tie. The easureet procedure is based o the easureet of the spherical sesitivity patter of the DUT. The sesitivity values of the DUT at a predefied BER level are sapled i far field i a group of poits located o a spherical surface eclosig the DUT. The EIS saples are take usig a costat saple step of 30 both i theta (θ) ad phi (φ) directios. All the EIS saples are take with two orthogoal polarizatios, θ - ad ϕ -polarisatios. The Total Radiated Sesitivity is calculated fro the easured data by equatio i clause Test procedure, reverberatio chaber ethod ) Sed cotiuously Up power cotrol coads to the LEE UE. ) As the UE reaches axiu power, start sedig N5 data patter. 3) ositio ad cofigure the LEE accordig to clause 5.. 4) Set the base statio siulator to a specific output power ad perfor a BER easureet. 5) Icrease or decrease the base statio output power as eeded, ad repeat step 5 util the lowest output power is foud that gives a BER value of % ± 0.% usig or ore bits, see Aex E.9.3. This correspods to

87 86 S thres,,. The DL power step size shall be o bigger tha 0.5dB whe the RF level is ear the TDD UE sesitivity level. NOTE: To eet BER value target DL power level ca be chaged usig user s freely selectable algorith. 6) Repeat step 4 ad 5 util a sufficiet uber of idepedet saples (see sectio 6..3) of easured. thres,, S has bee 7) Calculate TRS usig equatios fro chapter 6.0. NOTE : The easureet procedure is based o saples of the received sigal power at the UE/MS fro a full 3 diesioal isotropic eviroet with uifor elevatio ad aziuth field distributio. The power received by the DUT is udergoig Rayleigh fadig ad is trasitted by the fixed easureet ateas. Moreover, it is iportat that the saples collected are idepedet, i order to get sufficiet accuracy of the estiated TRS value Test requireets The average TRS of low, id ad high chael for % BER with.kbps DL referece chael as defied i Aex C.3 of TS 34. [3] shall be lower tha test requireets for roaig bads show i Table The averagig shall be doe i liear scale for the TRS results. TRS average = 0log low /0 id /0 high / I additio the axiu TRS of each easured chael shall be better tha iiu perforace requireets for roaig bads show i the colus Max. TRS = /0 low /0 /0 id high [ (,0, )] ax 0log ax 0 0 Table 6.0.3: TRS test requireets for TDD LEE devices i data trasfer positio Operatig Bad Uit <REFÎor> - - Average Max a db/.8 MHz TBD +TT TBD +TT b db/.8 MHz TBD +TT TBD +TT c db/.8 MHz TBD +TT TBD +TT d db/.8 MHz TBD +TT TBD +TT e db/.8 MHz TBD +TT TBD +TT f db/.8 MHz TBD +TT TBD +TT NOTE : Applicable for dual-ode GSM/UTRA LCR TDD. NOTE : Applicable for otebook devices. NOTE: If the above Test Requireet differs fro the Miiu Requireet the the Test Tolerace applied for this test is o-zero. The Test Tolerace for this test is defied ad the explaatio of how the Miiu Requireet has bee relaxed by the Test Tolerace is give i Aex D.

88 87 Aex A (orative): Test syste characterizatio The ai objective of this sectio is to defie basic paraeters of siulated user (phato) ad easureet setup. A. hato specificatios A.. Head hato The Specific Athropoorphic Maequi (SAM) is used for radiated perforace easureets without the shell thickess requireet i o-critical areas of SAM. The dielectric properties of used aterial shall be aitaied withi ±5% of target properties listed i table A.. For other frequecies withi the frequecy rage, liear iterpolatio ethod shall be used to obtai target dielectric properties. Table A. Frequecy Relative Dielectric Coductivity (σ) (MHz) Costat (ε r) (S/) ,5 0, ,5 0, ,5 0, ,5, ,0, ,0, ,0, ,0, ,, ,5,40 Exaple of recipe for tissue siulatig liquid is preseted i aex F. A.. Laptop Groud lae hato A laptop groud plae phato is used for radiated perforace easureets i case of plug-i DUT like USB dogles. The laptop groud plae phato specified i figure A.A is coposed of the followig parts: A rectagular plae covered by a coductive fil o the upper side with thickess of 4 to eulate the keyboard ad ai body of the laptop; A rectagular plae covered by the sae coductive fil o the upper side with thickess of 4 to eulate the scree of the laptop; The coductive fil o the two plaes is coected. The agle betwee the two plaes is 0 degrees. The aterial is FR-4 copper-clad sheet ad the legth ad width of these two plaes are 345 ad 38 respectively; A horizotal USB coector is placed alog the short ed of the plae. The locatio of the port is at the right back corer, the distace betwee the cetral axis of the USB coector ad the rear edge of plae is 45, ad the groud of the USB coector is welded o the coductive fil of the plae. The detailed descriptio of the structure is specified i figure A.A;

89 88 A USB cable crossig the groud plae ad coectig the USB coector to a real fuctioal laptop. The USB cable should be equipped with a shielded etal fil, ad the portio of the cable that is haged i the air shall be covered with absorbig aterial or treated with quarter wave chokes. The part of the USB cable lyig o the plae is covered by a coductive adhesive strip used for fixig the cable o the plae ad for guaratyig at the sae tie the superficial cotiuity of the coductive plae. The shielded coductive fil of this part of the USB cable is coected to the coductive fil of the plae ad the covered strip to well groud the atea. The legth of the USB cable should be o ore tha 3. Figure A.A: The laptop groud plae phato with DUT ad the real fuctioal laptop 38 Frot view 0degree 38 4 rear edge Side view Coductive adhesive strip USB Coector USB Cable 345 Top view Figure A.A: The structure ad diesio of the laptop groud phato

90 89 A. Aechoic chaber costraits Testig shall be perfored i a aechoic chaber fulfillig followig requireets. A.. ositioer For the DUT positioig o head phato the chaber should be equipped with a positioer akig possible to perfor full 3-D easureets for both Tx ad Rx radiated perforace. The cetre of the rotatio should be the phase cetre of the atea, i the case it is ot possible to evaluate a estiatio of the atea cetre should be used. Alteratively cetre of the lie betwee right ad left ear referece poits ca be used as a cetre of rotatio. Theta (θ) ad phi (φ) agles are specified i figure A.. DUT φ θ probe atea Figure A.: The coordiate syste used i the easureets for the head phato For the DUT positioig o laptop groud plae phato the chaber should be equipped with a positioer akig possible to perfor full 3-D easureets for both Tx ad Rx radiated perforace. The real fuctioal laptop is laid o the floor of the aechoic chaber, supplies power to the DUT ad cotrols the state of the DUT. Both the USB cable ad the real fuctioal laptop are properly setup i order to have a egligible ipact o the easureets: the real fuctioal laptop is fully wrapped up with aechoic absorbers. Theta (θ) ad phi (φ) agles are specified i figure A.A.

91 90 Figure A.A: The coordiate syste used i the easureets for the laptop groud plae phato A.. Measureet Atea The easureet atea should be able to easure two orthogoal polarizatios (typically liear theta (θ) ad phi (φ) polarizatios). Note that sigle-polarized liear easureet atea ca also be used by turig it 90 for every easureet poit. For far-field easureets, the distace r betwee the DUT ad the easureet atea should be D r > ax,3d,3λ λ where λ is the wavelegth of the easureet frequecy ad D the axiu extesio of the radiatig structure. The the phase- ad aplitude ucertaity liits ad the reactive ear field liit are ot exceeded. The ifluece of easureet distace is discussed i Appedix A - Estiatio of Measureet Ucertaity A..3 Quiet Zoe Reflectivity of the quiet zoe shall be easured for frequecies used with ethod described i Appedix F. Measured reflectivity level is used i ucertaity calculatios. A..4 Shieldig effectiveess of the chaber The recoeded level of the shieldig effectiveess is -00 db fro 800 MHz to 4 GHz. See Appedix G for ore details o shieldig effectiveess validatio. A.3 Reverberatio chaber costraits The alterative test ethod ca be realized i a reverberatio chaber fulfillig the followig requireets.

92 9 A.3. ositioig ad ode stirrig facilities The reverberatio chaber shall be equipped with ode-stirrig facilities i such a way that eough uber of idepedet power saples ca be achieved for the accuracy requireet stated i this stadard to be fulfilled. ossible ode-stirrig ethods iclude platfor stirrig, polarizatio stirrig ad echaical stirrig with fa-type stirrers, irregular shaped rotatioal stirrers, or plate-type stirrers. Also frequecy stirrig is possible if the type of easureet allows for a frequecy-averaged value, but this is ot ecessary if the chaber is sufficietly large ad well stirred. For the DUT positioig o head phato or for the DUT positioig o laptop groud plae phato, the DUT should be placed i such a way that a sufficiet uber of idepedet saples are obtaied to fulfil the ucertaity requireets. For exaple, for chabers utilizig platfor stirrig the DUT should be placed o the edge of the turtable i order to axiize rotatio of the DUT. I additio, the DUT ust ot be closer tha 0.5 wavelegths to other electroagetic reflective objects iside the chaber ad 0.7 wavelegths to absorbig objects. For the DUT positioig o laptop groud plae phato the real fuctioal laptop is laid o the floor of the chaber, supplies power to the DUT ad cotrols the state of the DUT. Both the USB cable ad the real fuctioal laptop are properly setup i order to have a egligible ipact o the easureets: the real fuctioal laptop is fully wrapped up with aechoic absorbers. The real fuctioal laptop ca be placed outside the chaber if the coectio to the DUT ca be aitaied ad if the couicatio iterface betwee DUT ad real fuctioal laptop has egligible ipact o the easureets. A scheatic picture of the easureet setup is provided i Figure A.. Figure A.: A scheatic picture of the reverberatio chaber easureet setup. A.3. Measureet Ateas It is iportat that the easureet ateas are cofigured i such a way that the statistical distributio of waves i the chaber i average correspods to a isotropic eviroet. A.3.3 Chaber size ad characteristics The reverberatio chaber shall have a volue large eough to support the uber of odes eeded for the stated accuracy at the lowest operatig frequecy. If the UE/MS is oved aroud i the chaber durig the easureet, the volue of the reverberatio chaber ca be reduced. Also, frequecy stirrig ca be used to iprove the accuracy, however, this will reduce the resolutio of the results correspodigly. The reverberatio chaber ca be loaded with lossy objects i order to cotrol the power delay profile i the chaber to soe extet. However the reverberatio chaber should ot be loaded to such a extet that the ode statistics i the chaber are destroyed. It is iportat to keep the sae aout of lossy objects i the chaber durig calibratio

93 9 easureet ad test easureet, i order ot to chage the average power trasfer fuctio betwee these two cases. Exaples of lossy object are head ad had phatos. Furtherore, the DUT ust ot be closer tha 0.5 wavelegths to other electroagetic reflective objects iside the chaber ad 0.7 wavelegths to absorbig objects. A.3.4 Shieldig effectiveess of the chaber The recoeded level of the shieldig effectiveess is -00 db fro 800 MHz to 4 GHz. See Appedix G.A for ore details o shieldig effectiveess validatio. A.4 Ebedded Devices The ai objectives of this sectio are to defie basic paraeters required whe perforig TR ad TRS easureets o Notebook ad Tablets. A.4. Notebook A otebook C is a portable persoal coputer cobiig the coputer, keyboard ad display i oe for factor. Typically the keyboard is built ito the base ad the display is higed alog the back edge of the base. The largest sigle diesio for a otebook is liited to 0.4. As otebooks are ot body wor equipet or recoeded for use placed directly o the lap, the otebook shall be tested i a free space cofiguratio without head ad had phatos. Whe the otebook is placed i a easureet chaber the display shall be cofigured accordig to Table A.. Table A.: Display settigs araeter Value Note Display lid agle 0 +/- 5 degrees The lid agle is defied as the agle betwee the frot of the display to the levelled base. LCD Backlight 50% Abiet sesor Disabled A typical otebook C is equipped with several radio access techologies. Durig the easureet the DUT shall be cofigured accordig to Table A.3. Table A.3: Ebedded radio trasitters araeter Value Note WWAN Eabled This is the DUT trasceiver Other trasceivers Disabled UWB, WLAN, Bluetooth The otebook power aageet shall be cofigured accordig to Table A.4. Table A.4: ower aageet araeter Value Note Screesaver Disabled Tur OFF display Never Tur OFF Hard Never drive Syste Hiberate Never Syste Stadby Never Dyaic cotrol of Disabled clock frequecies ower source Stadard battery

94 93 If the otebook is equipped with retractable ateas the device shall be tested with the ateas i a cofiguratio recoeded by the aufactures. A.4. Tablet <for future use>

95 94 Aex B (orative): Calibratio The relative power values of the easureet poits will be trasfored to absolute radiated power values (i db) by perforig a calibratio easureet. The calibratio easureet is doe by usig a referece atea with kow efficiecy or gai values. I the calibratio easureet the referece atea is easured i the sae place as the DUT, ad the atteuatio of the coplete trasissio path ( L total ) fro the DUT to the easureet receiver/nb/bs siulator is calibrated out. For the reverberatio chaber ethod, the calibratio atea ca be placed i a arbitrarily positio i the chaber, as log as it is placed 0.5 wavelegths fro other etallic objects ad 0.7 wavelegths fro absorbig objects. The gai ad/or radiatio efficiecy of the referece atea shall be kow at the frequecy bads i which the calibratios are perfored. Recoeded calibratio ateas are oopole ateas or sleeve dipoles tued for the each frequecy bad of iterest. Alteratively, other ethods ay be used if they esure a equal or greater level of accuracy. A etwork aalyzer is recoeded to be used to perfor the calibratio easureet. Also other devices ca be used to easure atteuatio. The calibratio is perfored idividually for the both orthogoal polarizatios, all the trasissio paths ad all frequecies used i the testig. For the reverberatio chaber ethod, all polarizatios ad trasissio paths are icluded i oe calibratio easureet. The priciple is based o the use of calibratio/substitutio ateas presetig a efficiecy kow with a sufficiet accuracy i the easureet badwidths. Such a calibratio atea is placed o the DUT positioer at the exact MS locatio used for TR ad TRS easureet. It is possible to use a echaical piece to place the calibratio atea o the positioer. This echaical piece should ot preset ay electroagetic properties, which could ifluece the frequecy respose ad the radiatio properties of the calibratio atea. Fid hereafter, a illustratio of the substitutio cofiguratio i Figure B.. For the reverberatio chaber ethod the calibratio atea ca be place i a arbitrarily positio, as log as it is placed 0.5 wavelegths fro other etallic objects ad 0.7 wavelegths fro absorbig objects. A illustratio of the easureet setup for this procedure ca be foud i Figure B.. B. Calibratio rocedure L total is the atteuatio betwee ad B, see figure B.. total ( L L E ) L = + AB AC cal Where L AC is cable loss fro A to C. The cable AC coectig the substitutio atea should be such that its ifluece upo radiatio patter easureets is iial. L AB is the atteuatio betwee poits A ad B. I TR ad TRS easureets poit B is coected to the calibrated iput/output port of easureet receiver. E cal is the efficiecy or gai of the calibratio atea at the frequecy of iterest.

96 95 Figure B. Calibratio/substitutio procedures usig a vector etwork aalyzer. If the calibratio is based o kow efficiecy of the calibratio atea, a full spherical scaig is perfored to deterie L AB. Uless the otherwise specified i the calibratio atea docuetatio, TR saplig grid ad equatio for TR i sectio 5.. should be used for head phato ad TR saplig grid ad equatio for TR i sectio 5.5. should be used for laptop groud plae phato ad ebedded devices. This procedure has to be doe at each frequecy of iterest. To achieve easureets with a ucertaity as low as possible, it is absolutely ecessary to exactly keep the sae to B cofiguratio (cables, dual-polarized atea. B. Calibratio rocedure Reverberatio Chaber Method The purpose of the calibratio easureet is to deterie the average power trasfer fuctio i the chaber, isatch of fixed easureet ateas ad path losses i cables coectig the power saplig istruet ad the fixed easureet ateas. referably a etwork aalyzer is used for these easureets. Recoeded calibratio ateas are dipoles tued to the frequecy bad of iterest. I geeral, the calibratio of a reverberatio chaber is perfored i three steps:. Measureet of S-paraeters through the reverberatio chaber for a coplete stirrig sequece. Calculatio of the chaber referece trasfer fuctio 3. Measureet of coectig cable isertio loss If several setups are used (e.g. epty chaber, chaber with head phato, etc.), steps ad ust be repeated for each cofiguratio. The calibratio easureet setup ca be studied i Figure B..

97 96 Figure B. Calibratio easureet setup i the reverberatio chaber, usig a vector etwork aalyzer. B.. Measureet of S-paraeters through the chaber for a coplete stirrig sequece This step will easure S-paraeters through the reverberatio chaber through a coplete stirrig sequece. This iforatio is required to deterie the chaber s referece trasfer fuctio. The procedure ust be perfored separately for each easureet setup of which the loadig of the chaber has bee chaged. The calibratio procedure ust be repeated for each frequecy as defied above. Therefore, it is advatageous if the etwork aalyzer ca be set to a frequecy sweep coverig the defied frequecies, so that all frequecies of iterest ca be easured with a iial uber of easureet rus. i. lace all objects ito the RC which will be used durig TR or TRS easureets, icludig a head phato, had phato ad fixture for the EUT. This esures that the loss i the chaber, which deteries the average power trasfer level, is the sae durig both calibratio ad test easureets. Also, if the EUT is large or cotais ay ateas, it ay represet a oticeable loadig of the chaber. It should the be preset i the chaber ad tured o durig the calibratio. ii. lace the calibratio atea iside the chaber. The calibratio atea is preferably outed o a low-loss dielectric fixture, to avoid effects fro the fixture itself which ay affect the EUT s radiatio efficiecy ad isatch factor. The calibratio atea ust be placed i the chaber i such a way that it is far eough fro ay walls, ode-stirrers, head phato, or other object, such that the eviroet for the calibratio atea (take over the coplete stirrig sequece) resebles a free space eviroet. Far eough away depeds o the type of calibratio atea used. For low gai early oidirectioal ateas like dipoles, it is orally sufficiet to esure that this spacig is larger tha 0.5 wavelegths. More directive calibratio ateas should be situated towards the cetre of the chaber. The calibratio atea should be preset i the chaber durig the TR/TRS easureets. iii. Calibrate the etwork aalyzer with a full -port calibratio i such a way that the vector S-paraeters betwee the ports of the fixed easureet atea ad the calibratio atea ca be accurately easured. referably, the etwork aalyzer is set to perfor a frequecy sweep at each stirrer positio. This will eable calibratio of several frequecy poits durig the sae stirrig sequece, thereby reducig calibratio tie. This will also eable frequecy stirrig, i.e., averagig the easured power trasfer fuctio over a sall frequecy badwidth aroud each easured frequecy poit (ovig frequecy widow). This will icrease accuracy at the expese of frequecy resolutio. iv. Coect the ateas ad easure the S-paraeters for each stirrer positio ad each fixed easureet atea.

98 97 The uber of stirrer positios i the chose stirrig sequece, i.e. the uber of S-paraeter saples at each frequecy poit, should be chose i such a way that it is large eough to yield a acceptable statistical cotributio to the total easureet ucertaity. As a guidelie it should be larger tha 00, preferable 00 or 400 to esure that the uber of idepedet saples is ot severely liited by the total uber of saples easured. The uber of idepedet saples, which is a subset of all saples, deteries the statistical cotributio to the expaded accuracy (which is two ties the stadard deviatio). This should be ot less tha 00 to esure a expaded accuracy better tha 0.5 db. The uber of idepedet saples depeds o the operatig frequecy, volue of the chaber, efficacy of the chaber s stirrers, the level of loadig by absorbig objects, ad whether or ot frequecy stirrig is used. The sequece of ovig the stirrers to differet positios ay be either step-wise (stoppig stirrer for each saple) or cotiuous (saplig o-the-fly). With cotiuous stirrig it ay ot be possible to characterize the chaber over a wide frequecy bad at the sae tie. B.. Calculatio of the chaber referece trasfer fuctio Fro the S-paraeters obtaied i the calibratio easureet, the chaber referece trasfer fuctio for fixed atea ca be calculated. The reflectio coefficiet for fixed atea ca be calculated as M R = S,, = M = Thus, the chaber referece trasfer fuctio ca be calculated as S, M S,, ref, = M = ( R )( S ) eref where M is the total uber of saples of the trasfer fuctio easured for each fixed easureet atea ad S,, is saple uber of the trasfer fuctio for easureet atea. Moreover, S is the coplex average of the calibratio atea reflectio coefficiet. Fially, e ref is the radiatio efficiecy of the calibratio atea. Note that the radiatio efficiecy of the fixed atea is ot corrected for, because it will be the sae both durig calibratio ad easureets. Therefore the fixed atea s radiatio efficiecy will ot affect the fial results. The sae ca be said about the isatch factor of the fixed easureet ateas, but it is still advatageous to correct for this factor if frequecy stirrig is applied to iprove accuracy. B.. Calculatio of the chaber referece trasfer fuctio Fro the S-paraeters obtaied i the calibratio easureet, the chaber referece trasfer fuctio for fixed atea ca be calculated. The reflectio coefficiet for fixed atea ca be calculated as M R = S,, = M = Thus, the chaber referece trasfer fuctio ca be calculated as S, M S,, ref, = M = ( R )( S ) eref where M is the total uber of saples of the trasfer fuctio easured for each fixed easureet atea ad S,, is saple uber of the trasfer fuctio for easureet atea. Moreover, S is the coplex

99 98 average of the calibratio atea reflectio coefficiet. Fially, e ref is the radiatio efficiecy of the calibratio atea. Note that the radiatio efficiecy of the fixed atea is ot corrected for, because it will be the sae both durig calibratio ad easureets. Therefore the fixed atea s radiatio efficiecy will ot affect the fial results. The sae ca be said about the isatch factor of the fixed easureet ateas, but it is still advatageous to correct for this factor if frequecy stirrig is applied to iprove accuracy. B..3 Cable calibratio This easureet step will calibrate the power loss of the cable eeded to coect the istruet used to easure the received power at the fixed easureet atea durig TR easureets, ad to geerate the power radiated by the fixed atea durig TRS easureets. i. Discoect the cables betwee the VNA ad the chaber ii. Coect the cables oe-by-oe betwee the two ports of the etwork aalyzer. The VNA ust be calibrated at its ow two ports. iii. Measure the frequecy respose of the trasissio S-paraeter ( S or S ) of the cable. iv. Save the power trasfer values ( etc). S ) of the frequecy respose curve for the test frequecies. ad cables positios, Calibratio shall be perfored yearly or if ay equipet i the easureet syste is chaged.

100 99 Aex C (orative): Measureet Test Report Operatioal ode, odel ad serial uber of the DUT shall be docueted to the test report. Whether the DUT is positioed agaist the phato head with a specific device holder or by other eas it should be described i the test report. Whe the DUT is positioed o the laptop groud plae phato it should be described i the test report. A photograph of the test setup is recoeded. Test equipet list should be icluded i the test report. TR [db] ad TRS [db] values shall be reported for each tested chael ad for each side of the head ad a frequecy bad average shall be calculated by usig followig equatios whe the phato head is used. 0 TR = 0log TRS 0log 0 TRlow _ right TRid _ right TRhigh _ right TRlow _ left TRid _ left TRhigh _ left = TRSlow _ right TRS id _ righ TRS high _ righ TRSlow _ left TRS id _ left TRS TR [db] ad TRS [db] values shall be reported for each tested chael ad a frequecy bad average shall be calculated by usig followig equatios whe the laptop groud plae phato is used ad whe the ebedded devices are tested. TR low 0 TRid / TR = 0log 3 6 / TRhigh /0 TRS = 0log TRSlow /0 TRSid /0 TRShigh / high _ left The expaded easureet ucertaity, assessed accordig Aex E, shall be docueted ext to the correspodig TR ad TRS results. The ucertaity calculatio shall be ade available. 0

101 00 Aex D (orative): Maxiu ucertaity of Test Syste ad Test Toleraces D. Maxiu ucertaity of Test Syste The axiu acceptable ucertaity of the Test Syste is specified below for each test. The Test Syste shall eable test to be easured with a ucertaity ot exceedig the specified values. All ucertaities are absolute values ad are valid for a cofidece level of 95 %. The estiatio of easureet ucertaity is preseted i ore detail i Aex E. Table D.: Test syste ucertaities for OTA tests Clause Maxiu Test Syste Ucertaity Derivatio of Test Syste Ucertaity 5. TR for FDD UE Bads I,II,III,IV,V,VI,VII,VIII,IX ±.9 db for sigle easureet Detailed derivatios of ucertaity ca be foud i Aex E 5.3 TR for GSM MS Bads GSM 850, -GSM 900, E-GSM 900, DCS 800, CS 900 Detailed derivatios of ucertaity ca be foud i Aex E ±.9 db for sigle easureet 5.4 TR for TDD UE Bads a,e,f ±.9 db for sigle easureet Detailed derivatios of ucertaity ca be foud i Aex E 5.5 TR for FDD UE usig LME Bads I,II,III,IV,V,VI,VII,VIII,IX Detailed derivatios of ucertaity ca ±.9 db for sigle easureet 5.6 TR for GSM UE usig LME Bads GSM 850, GSM 900, DCS 800, CS 900 ±.9 db for sigle easureet 5.7 TR for TDD UE usig LME Bads a,e,f ±.9 db for sigle easureet 5.8 TR for FDD usig LEE Bads I,II,III,IV,V,VI,VII,VIII,IX ±.9 db for sigle easureet 5.9 TR for GSM usig LEE Bads GSM 850, GSM 900, DCS 800, CS 900 ±.9 db for sigle easureet 5.0 TR for TDD usig LEE Bads a,e,f ±.9 db for sigle easureet 6. TRS for FDD UE Bads I,II,III,IV,V,VI,VII,VIII,IX ±.3 db for sigle easureet 6.3 TRS for GSM MS Bads GSM 850, -GSM 900, E-GSM 900, DCS 800, CS 900 ±.3 db for sigle easureet 6.4 TRS for TDD UE Bads a,e,f ±.3 db for sigle easureet 6.5 TRS for FDD UE usig LME Bads I,II,III,IV,V,VI,VII,VIII,IX ±.3 db for sigle easureet 6.6 TRS for GSM UE usig LME Bads GSM 850, GSM 900, DCS 800, CS 900 ±.3 db for sigle easureet 6.7 TRS for TDD UE usig LME Bads a,e,f ±.3 db for sigle easureet 6.8 TRS for FDD usig LEE Bads I,II,III,IV,V,VI,VII,VIII,IX ±.3 db for sigle easureet 6.9 TRS for GSM usig LEE Bads GSM 850, GSM 900, DCS 800, CS 900 ±.3 db for sigle easureet 6.0 TRS for TDD usig LEE Bads a,e,f ±.3 db for sigle easureet be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E. Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E Detailed derivatios of ucertaity ca be foud i Aex E

102 0 D. Test toleraces (iforative) Test toleraces below are used to relax the Miiu Requireets i the preset docuet to derive the Test Requireets.

103 0 Table D.: Test toleraces for OTA tests Clause Test Tolerace 5. TR for FDD UE Bads I,II,III,IV,V,VI,VII,VIII,IX.0 db for iiu requireet 0.7 db for average requireet 5.3 TR for GSM MS Bads GSM 850, -GSM 900, E- GSM 900, DCS 800, CS db for iiu requireet 0.7 db for average requireet 5.4 TR for TDD UE Bads a,e,f.0 db for iiu requireet 0.7 db for average requireet 5.5 TR for FDD UE usig LME Bads I,II,III,IV,V,VI,VII,VIII,IX.0 db for iiu requireet 0.7 db for average requireet 5.6 TR for GSM UE usig LME Bads GSM 850, GSM 900, DCS 800, CS db for iiu requireet 0.7 db for average requireet 5.7 TR for TDD UE usig LME Bads a,e,f.0 db for iiu requireet 0.7 db for average requireet 5.8 TR for FDD usig LEE Bads I,II,III,IV,V,VI,VII,VIII,IX.0 db for iiu requireet 0.7 db for average requireet 5.9 TR for GSM usig LEE Bads GSM 850, GSM 900, DCS 800, CS db for iiu requireet 0.7 db for average requireet 5.0 TR for TDD usig LEE Bads a,e,f.0 db for iiu requireet 0.7 db for average requireet 6. TRS for FDD UE Bads I,II,III,IV,V,VI,VII,VIII,IX. db for axiu requireet 0.9 db for average requireet 6.3 TRS for GSM MS Bads GSM 850, -GSM 900, E- GSM 900, DCS 800, CS 900. db for axiu requireet 0.9 db for average requireet 6. TRS for TDD UE Bads a,e,f. db for iiu requireet 0.9 db for average requireet 6.5 TRS for FDD UE usig LME Bads I,II,III,IV,V,VI,VII,VIII,IX. db for axiu requireet 0.9 db for average requireet 6.6 TRS for GSM UE usig LME Bads GSM 850, -GSM 900, E- GSM 900, DCS 800, CS 900. db for axiu requireet 0.9 db for average requireet 6.7 TRS for TDD UE usig LME Bads a,e,f. db for iiu requireet 0.9 db for average requireet 6.8 TRS for FDD usig LEE Bads I,II,III,IV,V,VI,VII,VIII,IX. db for axiu requireet 0.9 db for average requireet 6.9 TRS for GSM usig LEE Bads GSM 850, GSM 900, DCS 800, CS 900. db for axiu requireet 0.9 db for average requireet 6.0 TRS for TDD usig LEE Bads a,e,f. db for axiu requireet 0.9 db for average requireet

104 03 D.3 Derivatio of Test Requireets (iforative) Clause 5. TR for FDD UE (ower Class 3 ad 3bis) 5. TR for FDD UE (ower Class 4) Table D.3: Derivatio of test requireets for OTA tests Operatig Bad Miiu requireet i TS5.44 Test Tolerace (TT) Test requireet i TS34.4 Average Mi Average Mi Average Mi db db db db db db I II III IV V VI VII VIII IX XIX I II III IV V VI VII VIII IX XIX TR for GSM MS GSM GSM E-GSM DCS CS TR for TDD UE a b TBD TBD TBD TBD TBD TBD c TBD TBD TBD TBD TBD TBD d TBD TBD TBD TBD TBD TBD e f TR for FDD UE usig LME (ower Class 3 ad 3bis) 5.5 TR for FDD UE usig LME (ower Class 4) 5.6 TR for GSM UE usig LME I TBD TBD TBD TBD TBD TBD II TBD TBD TBD TBD TBD TBD III TBD TBD TBD TBD TBD TBD IV TBD TBD TBD TBD TBD TBD V TBD TBD TBD TBD TBD TBD VI TBD TBD TBD TBD TBD TBD VII TBD TBD TBD TBD TBD TBD VIII TBD TBD TBD TBD TBD TBD IX TBD TBD TBD TBD TBD TBD XIX TBD TBD TBD TBD TBD TBD I TBD TBD TBD TBD TBD TBD II TBD TBD TBD TBD TBD TBD III TBD TBD TBD TBD TBD TBD IV TBD TBD TBD TBD TBD TBD V TBD TBD TBD TBD TBD TBD VI TBD TBD TBD TBD TBD TBD VII TBD TBD TBD TBD TBD TBD VIII TBD TBD TBD TBD TBD TBD IX TBD TBD TBD TBD TBD TBD XIX TBD TBD TBD TBD TBD TBD GSM 850 TBD TBD TBD TBD TBD TBD GSM 900 TBD TBD TBD TBD TBD TBD DCS 800 TBD TBD TBD TBD TBD TBD CS 900 TBD TBD TBD TBD TBD TBD

105 TR for TDD UE usig LME 5.8 TR for FDD usig LEE (ower Class 3 ad 3bis) 5.8 TR for FDD usig LEE (ower Class 4) 5.9 TR for GSM usig LEE 5.0 TR for TDD usig LEE a TBD TBD TBD TBD TBD TBD b TBD TBD TBD TBD TBD TBD c TBD TBD TBD TBD TBD TBD d TBD TBD TBD TBD TBD TBD e TBD TBD TBD TBD TBD TBD f TBD TBD TBD TBD TBD TBD I TBD TBD TBD TBD TBD TBD II TBD TBD TBD TBD TBD TBD III TBD TBD TBD TBD TBD TBD IV TBD TBD TBD TBD TBD TBD V TBD TBD TBD TBD TBD TBD VI TBD TBD TBD TBD TBD TBD VII TBD TBD TBD TBD TBD TBD VIII TBD TBD TBD TBD TBD TBD IX TBD TBD TBD TBD TBD TBD XIX TBD TBD TBD TBD TBD TBD I TBD TBD TBD TBD TBD TBD II TBD TBD TBD TBD TBD TBD III TBD TBD TBD TBD TBD TBD IV TBD TBD TBD TBD TBD TBD V TBD TBD TBD TBD TBD TBD VI TBD TBD TBD TBD TBD TBD VII TBD TBD TBD TBD TBD TBD VIII TBD TBD TBD TBD TBD TBD IX TBD TBD TBD TBD TBD TBD XIX TBD TBD TBD TBD TBD TBD GSM 850 TBD TBD TBD TBD TBD TBD GSM 900 TBD TBD TBD TBD TBD TBD DCS 800 TBD TBD TBD TBD TBD TBD CS 900 TBD TBD TBD TBD TBD TBD a TBD TBD TBD TBD TBD TBD b TBD TBD TBD TBD TBD TBD c TBD TBD TBD TBD TBD TBD d TBD TBD TBD TBD TBD TBD e TBD TBD TBD TBD TBD TBD f TBD TBD TBD TBD TBD TBD 6. TRS for FDD UE I II III IV V VI VII VIII IX XIX TRS for GSM MS GSM GSM E-GSM DCS CS TRS for TDD UE a b TBD TBD TBD TBD TBD TBD c TBD TBD TBD TBD TBD TBD d TBD TBD TBD TBD TBD TBD e f TRS for FDD UE usig LME I TBD TBD TBD TBD TBD TBD II TBD TBD TBD TBD TBD TBD III TBD TBD TBD TBD TBD TBD IV TBD TBD TBD TBD TBD TBD V TBD TBD TBD TBD TBD TBD VI TBD TBD TBD TBD TBD TBD VII TBD TBD TBD TBD TBD TBD VIII TBD TBD TBD TBD TBD TBD

106 05 IX TBD TBD TBD TBD TBD TBD XIX TBD TBD TBD TBD TBD TBD 6.6 TRS for GSM UE GSM 850 TBD TBD TBD TBD TBD TBD usig LME GSM 900 TBD TBD TBD TBD TBD TBD DCS 800 TBD TBD TBD TBD TBD TBD CS 900 TBD TBD TBD TBD TBD TBD 6.7 TRS for TDD UE a TBD TBD TBD TBD TBD TBD usig LME b TBD TBD TBD TBD TBD TBD c TBD TBD TBD TBD TBD TBD d TBD TBD TBD TBD TBD TBD e TBD TBD TBD TBD TBD TBD f TBD TBD TBD TBD TBD TBD 6.8 TRS for FDD I TBD TBD TBD TBD TBD TBD usig LEE II TBD TBD TBD TBD TBD TBD III TBD TBD TBD TBD TBD TBD IV TBD TBD TBD TBD TBD TBD V TBD TBD TBD TBD TBD TBD VI TBD TBD TBD TBD TBD TBD VII TBD TBD TBD TBD TBD TBD VIII TBD TBD TBD TBD TBD TBD IX TBD TBD TBD TBD TBD TBD XIX TBD TBD TBD TBD TBD TBD 6.9 TRS for GSM GSM 850 TBD TBD TBD TBD TBD TBD usig LEE GSM 900 TBD TBD TBD TBD TBD TBD DCS 800 TBD TBD TBD TBD TBD TBD CS 900 TBD TBD TBD TBD TBD TBD 6.0 TRS for TDD a TBD TBD TBD TBD TBD TBD usig LEE b TBD TBD TBD TBD TBD TBD c TBD TBD TBD TBD TBD TBD d TBD TBD TBD TBD TBD TBD e TBD TBD TBD TBD TBD TBD f TBD TBD TBD TBD TBD TBD Note: The iiu requireets for -GSM 900 ad E-GSM 900 are specified as iiu

107 06 Aex E (orative): Estiatio of Measureet Ucertaity Editor s ote: The followig aspects are either issig or ot yet deteried: The head ad had phato ad had oly phato cofiguratios are TBD Idividual ucertaity cotributios i the TR ad TRS easureets are discussed ad evaluated i this Appedix. A techique for calculatig the total easureet ucertaity is also preseted. More detailed discussio o the ucertaity cotributios ca be foud fro [4]. The TR/TRS easureet procedure ca be cosidered to iclude two stages. I Stage the actual easureet of the 3-D patter of the Device Uder Test (DUT) is perfored. I Stage the calibratio of the absolute level of the DUT easureet results is perfored by eas of usig a calibratio atea whose absolute gai/radiatio efficiecy is kow at the frequecies of iterest. The ucertaity cotributios related to TR are listed i Table E. ad the cotributios related to TRS are i Table A.. The ucertaity cotributios are aalyzed i the followig paragraphs. The calculatio of the ucertaity cotributio is based o the ISO Guide to the expressio of ucertaity i easureet. Each idividual ucertaity is expressed by its Stadard Deviatio (tered here as stadard ucertaity ) ad represeted by sybol U. The ucertaity cotributios ca be classified to two categories: Type-A ucertaities, which are statistically deteried e.g. by repeated easureets, ad Type-B ucertaities, which are derived fro existig data e.g. data sheets. Several idividual ucertaities are coo i Stage ad Stage ad therefore cacel. The procedure of forig the ucertaity budget i TR easureet is: ) Copile lists of idividual ucertaity cotributios for TR easureet both i Stage ad Stage. ) Deterie the stadard ucertaity of each cotributio by a) Deteriig the distributio of the ucertaity (Gaussia, U-shaped, rectagular, etc.) b) Deteriig the axiu value of each ucertaity (uless the distributios is Gaussia) c) Calculatig the stadard ucertaity by dividig the ucertaity by if the distributio is U-shaped, ad by 3 if the distributio is rectagular. 3) Covert the uits ito decibel, if ecessary. 4) Cobie all the stadard ucertaities by the Root of the Su of the Squares (RSS) ethod. 5) Cobie the total ucertaities i Stage ad Stage also by the RSS ethod: u = u + u c c, DUT easureet c, calibratio easureet. 6) Multiply the result by a expasio factor of.96 to derive expaded ucertaity at 95% cofidece level:.96 u * c. Exaple ucertaity budgets are preseted i Tables E.5, E.6, E.7, E.8, E.9, E.0, E., E., E.3 ad E. 4.

108 07 Table E.: Ucertaity cotributios i TR easureet Descriptio of ucertaity cotributio Stage, DUT easureet Details i paragraph ) Misatch of receiver chai (i.e. betwee probe atea ad easureet receiver) E.-E. ) Isertio loss of receiver chai E.3-E.5 3) Ifluece of the probe atea cable E.6 4) Ucertaity of the absolute atea gai of the probe atea E.7 5) Measureet Receiver: ucertaity of the absolute level E.8 6) Measureet distace: a) offset of DUT phase cetre fro axis(es) of rotatio E.9 b) utual couplig betwee the DUT ad the probe atea c) phase curvature across the DUT 7) Quality of quiet zoe E.0 8) DUT Tx-power drift E. 9) Ucertaity related to the use of phatos: (applicable whe a phato is used): If SAM head phato is used: a) ucertaity fro usig differet types of SAM phato b) siulated tissue liquid ucertaity c) effect of the DUT holder If SAM head ad had phatos are used: TBD E. If a had phato is used: TBD If a laptop groud plae phato is used: a) Ucertaity related to the use of the Laptop Groud lae phato 0) Coarse saplig grid E.3 ) Rado ucertaity (repeatability, icludig positioig ucertaity of the DUT agaist the SAM phato or DUT plugged ito the Laptop Groud lae E.4 phato) Stage, Calibratio easureet, etwork aalyzer ethod, figure 7.5 ) Ucertaity of etwork aalyzer E.5 3) Misatch of receiver chai E.-E. 4) Isertio loss of receiver chai E.3-E.5 5) Misatch i the coectio of calibratio atea E. 6) Ifluece of the calibratio atea feed cable E.6 7) Ifluece of the probe atea cable E.6 8) Ucertaity of the absolute gai of the probe atea E.7 9) Ucertaity of the absolute gai/ radiatio efficiecy of the calibratio atea E.6 0) Measureet distace: a) Offset of calibratio atea s phase cetre fro axis(es) of rotatio E.9 b) Mutual couplig betwee the calibratio atea ad the probe atea c) hase curvature across the calibratio atea ) Quality of quiet zoe E.0

109 08 Table E.: Ucertaity cotributios i TRS easureet Descriptio of ucertaity cotributio Stage, DUT easureet Details i paragraph ) Misatch of trasitter chai (i.e. betwee probe atea ad base statio siulator) E.-E. ) Isertio loss of trasitter chai E.3-E.5 3) Ifluece of the probe atea cable E.6 4) Ucertaity of the absolute atea gai of the probe atea E.7 5) Base statio siulator: ucertaity of the absolute output level E.7 6) BER easureet: output level step resolutio E.8 7) Statistical ucertaity of BER easureet E.9 8) BER data rate oralizatio E.0 9) Measureet distace: a) offset of DUT phase cetre fro axis(es) of rotatio E.9 b) utual couplig betwee the DUT ad the probe atea c) phase curvature across the DUT 0) Quality of quiet zoe E.0 ) DUT sesitivity drift E. ) Ucertaity related to the use of phatos: (applicable whe a phato is used): If a SAM head phato is used: a) ucertaity fro usig differet types of SAM phato b) siulated tissue liquid ucertaity c) effect of the DUT holder If SAM head ad had phatos are used: TBD E. If a had phato is used: TBD If a laptop groud plae phato is used: a) Ucertaity related to the use of the Laptop Groud lae phato 3) Coarse saplig grid E.3 4) Rado ucertaity (repeatability) - positioig ucertaity of the DUT agaist the SAM or DUT plugged ito E.4 the Laptop Groud lae phato Stage, Calibratio easureet, etwork aalyzer ethod, figure 7.5 5) Ucertaity of etwork aalyzer E.5 6) Misatch i the coectio of trasitter chai (i.e. betwee probe atea ad NA) E.-E. 7) Isertio loss of trasitter chai E.3-E.5 8) Misatch i the coectio of calibratio atea E. 9) Ifluece of the calibratio atea feed cable E.6 0) Ifluece of the probe atea cable E.6 ) Ucertaity of the absolute gai of the probe atea E.7 ) Ucertaity of the absolute gai/radiatio efficiecy of the calibratio atea E.6 3) Measureet distace: a) Offset of calibratio atea s phase cetre fro axis(es) of rotatio b) Mutual couplig betwee the calibratio atea ad the probe atea E.9 c) hase curvature across the calibratio atea 5) Quality of quiet zoe E.0

110 09 If a etwork aalyzer is ot available for calibratio easureet ad a spectru aalyzer or a power eter is used, Stage errors i Tables ad shall be replaced by Table 3. Table E.3: Ucertaity cotributios i Stage (calibratio easureet, spectru aalyzer ethod) Descriptio of ucertaity cotributio Details i paragraph Stage, calibratio easureet, spectru aalyser ethod, figure 7.4 ) Cable loss easureet ucertaity E. ) Ucertaity fro ipedace isatch betwee the sigal geerator ad the calibratio atea E. 3) Ipedace isatch ucertaity betwee the easureet receiver ad the probe atea E. 4) Sigal geerator: ucertaity of the absolute output level E.3 5) Sigal geerator: output level stability E.4 6) Ifluece of the calibratio atea feed cable E.6 7) Ifluece of the probe atea cable E.6 8) Isertio loss of the calibratio atea feed cable E.5 9) Isertio loss of the probe atea cable E.3 0) Misatch ucertaity: betwee sigal geerator ad calibratio atea (if atea atteuator is used) E. ) Misatch ucertaity: betwee easureet receiver ad probe atea (if atea atteuator is used) E. ) Isertio loss of the calibratio atea atteuator (if used) E.6 3) Isertio loss of the probe atea atteuator (if used) E.4 4) Ucertaity of the absolute level of the easureet receiver E.8 5) Ucertaity of the absolute gai of the probe atea E.7 6) Ucertaity of the absolute gai of the calibratio atea E.6 8) Measureet distace: a) Offset of calibratio atea s phase cetre fro axis(es) of rotatio E.9 b) Mutual couplig betwee the calibratio atea ad the probe atea c) hase curvature across the calibratio atea 7) Quality of quiet zoe E.0

111 0 Table E.3.a: Ucertaity cotributios i TR easureet for reverberatio chaber ethod Descriptio of ucertaity cotributio Stage, DUT easureet Details i paragraph ) Misatch of receiver chai (i.e. betwee fixed easureet atea ad easureet receiver) E.-E. ) Isertio loss of receiver chai E.3-E.5 3) Ifluece of the fixed easureet atea cable E.6 4) Ucertaity of the absolute atea gai of the fixed easureet atea E.7 5) Measureet Receiver: ucertaity of the absolute level E.8 6) Chaber statistical ripple ad repeatability E.6.A 7) Additioal power loss i EUT chassis E.6.B 8) DUT Tx-power drift E. 9) Ucertaity related to the use of the SAM phato: a) ucertaity fro usig differet types of SAM phato E. b) siulated tissue liquid ucertaity c) effect of the DUT holder 0) Rado ucertaity (repeatability, icludig positioig ucertaity of the DUT agaist the SAM phato or DUT plugged ito the Laptop Groud lae E.4 phato) ) Ucertaity related to the use of the Laptop Groud lae phato E.3 Stage, Calibratio easureet, etwork aalyzer ethod, figure 7.5 ) Ucertaity of etwork aalyzer E.5 3) Misatch of receiver chai E.-E. 4) Isertio loss of receiver chai E.3-E.5 5) Misatch i the coectio of calibratio atea E. 6) Ifluece of the calibratio atea feed cable E.6 7) Ifluece of the fixed easureet atea cable E.6 8) Ucertaity of the absolute gai of the fixed easureet atea E.7 9) Ucertaity of the absolute gai/ radiatio efficiecy of the calibratio atea E.6 0) Chaber statistical ripple ad repeatability E.6.A

112 Table E.3.b: Ucertaity cotributios i TRS easureet for reverberatio chaber ethod Descriptio of ucertaity cotributio Stage, DUT easureet Details i paragraph ) Misatch of trasitter chai (i.e. betwee fixed easureet atea ad base statio siulator) E.-E. ) Isertio loss of trasitter chai E.3-E.5 3) Ifluece of the fixed easureet atea cable E.6 4) Ucertaity of the absolute atea gai of the fixed easureet atea E.7 5) Base statio siulator: ucertaity of the absolute output level E.7 6) BER easureet: output level step resolutio E.8 7) Statistical ucertaity of BER easureet E.9 8) BER data rate oralizatio E.0 9) Chaber statistical ripple ad repeatability E.6.A 0) Additioal power loss i EUT chassis E.6.B ) DUT sesitivity drift E. ) Ucertaity related to the use of the SAM phato: a) ucertaity fro usig differet types of SAM phato E. b) siulated tissue liquid ucertaity c) effect of the DUT holder 3) Rado ucertaity (repeatability) - positioig ucertaity of the DUT agaist the SAM or DUT plugged ito E.4 the Laptop Groud lae phato) 4) Ucertaity related to the use of the Laptop Groud lae phato E.3 Stage, Calibratio easureet, etwork aalyzer ethod, figure 7.5 5) Ucertaity of etwork aalyzer E.5 6) Misatch of receiver chai E.-E. 7) Isertio loss of receiver chai E.3-E.5 8) Misatch i the coectio of calibratio atea E. 9) Ifluece of the calibratio atea feed cable E.6 0) Ifluece of the fixed easureet atea cable E.6 ) Ucertaity of the absolute gai of the fixed easureet atea E.7 ) Ucertaity of the absolute gai/ radiatio efficiecy of the calibratio atea E.6 3) Chaber statistical ripple ad repeatability E.6.A If a etwork aalyzer is ot available for calibratio easureet ad a spectru aalyzer or a power eter is used, Stage errors i Tables ad shall be replaced by Table 3.

113 Table E.3.c: Ucertaity cotributios i Stage (calibratio easureet, spectru aalyzer ethod) for the reverberatio chaber ethod Descriptio of ucertaity cotributio Details i paragraph Stage, calibratio easureet, spectru aalyser ethod, figure 7.4 ) Cable loss easureet ucertaity E. ) Ucertaity fro ipedace isatch betwee the sigal geerator ad the calibratio atea E. 3) Ipedace isatch ucertaity betwee the easureet receiver ad the fixed easureet atea E. 4) Sigal geerator: ucertaity of the absolute output level E.3 5) Sigal geerator: output level stability E.4 6) Ifluece of the calibratio atea feed cable E.6 7) Ifluece of the fixed easureet atea cable E.6 8) Isertio loss of the calibratio atea feed cable E.5 9) Isertio loss of the fixed easureet atea cable E.3 0) Misatch ucertaity: betwee sigal geerator ad calibratio atea (if atea atteuator is used) E. ) Misatch ucertaity: betwee easureet receiver ad fixed easureet atea (if atea atteuator is used) E. ) Isertio loss of the calibratio atea atteuator (if used) E.6 3) Isertio loss of the fixed easureet atea atteuator (if used) E.4 4) Ucertaity of the absolute level of the easureet receiver E.8 5) Ucertaity of the absolute gai of the fixed easureet atea E.7 6) Ucertaity of the absolute gai of the calibratio atea E.6 9) Chaber statistical ripple ad repeatability E.6.A E. Misatch ucertaity betwee easureet receiver ad the probe atea If the sae chai cofiguratio (icludig the easureet receiver; the probe atea ad other eleets) is used i both stages, the ucertaity is cosidered systeatic ad costat 0.00dB value. If it is ot the case, this ucertaity cotributio has to be take ito accout ad should be easured or deteried by the ethod described i []. E. FFS E.3 Isertio loss of the probe atea cable If the probe atea cable does ot ove betwee the calibratio ad the DUT easureet stage, the ucertaity due to the isertio loss of the cable is assued to be systeatic. Moreover, this ucertaity is coo ad costat i both stages ad that is why this leads to 0.00dB value. If a differet cable is used i the calibratio easureet ad i the DUT easureet, ad the differece of the isertio loss is used i the calculatios, the the overall cobied stadard ucertaity of the isertio loss easureet should be used i the ucertaity budget. The distributio of this ucertaity is assued to be rectagular, i which case the stadard ucertaity ca be calculated as the axiu value/ 3.

114 3 E.4 Isertio loss of the probe atea atteuator (if used) See Isertio loss of the probe atea cable If the probe atea atteuator is used i both stages, the ucertaity is cosidered systeatic ad costat 0.00dB value. E.5 Isertio loss of the RF relays (if used) See Isertio loss of the probe atea cable. If the RF relay is used i both stages, the ucertaity is cosidered systeatic ad costat 0.00dB value. E.6 Ifluece of the atea cable E.6. robe atea cable If the probe atea is directioal (i.e. peak gai >+5dBi e.g. hor, LDA, etc.) ad the sae probe atea cable cofiguratio is used for both stages, the ucertaity is cosidered systeatic ad costat 0.00dB value. I other cases a techical study should be doe. A techical report [4] gives a discussio o the results obtaied by testig a vertically polarized bicoical atea over a groud plae with differig RF cable cofiguratios. E.6. Calibratio atea cable If a efficiecy calibratio is perfored, ifluece of the calibratio atea feed cable ca be assued to be egligible, due to data averagig. I the case of gai calibratio, the ifluece of the calibratio atea feed cable shall be assessed by easureets. A gai calibratio easureet is repeated with a reasoably differig routig of the feed cable. Largest differece betwee the results is etered to the ucertaity budget with a rectagular distributio. E.7 Absolute gai of the probe atea The ucertaity appears i the both stages ad it is thus cosidered systeatic ad costat 0.00dB value. E.8 Measureet Receiver: ucertaity of absolute level The receivig device is used to easure the received sigal level i TR tests either as a absolute level or as a relative level. Receivig device used is typically a Base Statio Siulator (BSS), spectru aalyzer (SA), or power eter (M). Geerally there occurs a ucertaity cotributio fro liited absolute level accuracy ad o-liearity. E.9 Measureet distace The ucertaity cotributio fro a fiite easureet distace is estiated i three parts.

115 4 E.9. Offset of DUT phase cetre fro axis(es) of rotatio I all the easureets defied i this test procedure the DUT ad phato cobiatio is rotated about the ear referece poit of SAM phato, which is also assued to be the locatio of the phase cetre i both agular directios of the easureets. For soe turtables this ay be practically ipossible i which case a easureet ucertaity cotributio ca arise because the phase cetre will rotate o a o-zero radius about the cetre of rotatio, thereby givig a variable easureet distace. Data averagig process ay lead to a partial self-cacel of this ucertaity. The followig forula is used to estiate this ucertaity cotributio i stage : U phase_ceter_liits (db) = 0 log( d ± Δd) + 0 log( d) If a gai calibratio is perfored i Stage, the ucertaity cotributio of calibratio atea s displaceet is estiated with the previous forula. Misaliget ca be estiated with followig forula, U isaliget (db) = log( cosθ ) 0, whereθ is the isaliget agle betwee the calibratio atea ad the probe atea. The cotributio shall be added to displaceet error: U cal (db) = U + U phase _ ceter _ Δ isaliget For a efficiecy calibratio with a oidirectioal calibratio atea, the U cal is calculated siilarly as for gai calibratio but the ucertaity ay be divided by factor. This is due to correctig ipact of data averagig i this type of calibratio. E.9. Mutual couplig I easureet of radio perforaces of UMTS obile phoes i speech ode, the utual couplig ucertaity for this frequecy bad is a 0.00dB value (see aex A- i [5]). The 0.00dB value ca be exteded for the GSM; DCS ad CS bad frequecies. E.9.3 hase curvature This ucertaity origiates fro the fiite far-field easureet distace, which causes phase curvature across the DUT. If the easureet distace is > 0λ, this error is assued to be egligible. At GHz λ is 0.5, thus 0λ is.5. E.0 Quality of quiet zoe The ucertaity cotributio of the reflectivity level of the aechoic chaber is deteried fro the average stadard deviatio of the electric field i the quiet zoe. By repeatig a free space VSWR easureet i 5-degree grid i elevatio ad aziuth, 64 stadard deviatio values i both polarizatios are deteried. Fro these values average stadard deviatio of electric field i the quiet zoe ca be calculated fro the equatio: S freq where = π N M s π si( θ ) + NM,, hor NM = = = = N M s,, ver si( θ ) N is uber of agular itervals i elevatio,

116 5 M is uber of agular itervals i aziuth ad θ is elevatio of sigle easureet s,, pol. If a efficiecy calibratio with oidirectioal calibratio atea is perfored, the effect of reflectivity level decreases i Stage ad S freq ay be divided by factor. This is due to correctig ipact of data averagig i this type of calibratio. Efficiecy calibratio doe with saplig step 30, ca be cosidered to have at least four idepedet saples. ay be divided by factor also i stage for the sae reaso. S freq It s likely that asyetry of the field probe will have a very sall ipact o this easureet ucertaity cotributor, however, a upper boud to probe syetry should be cosidered. E. Tx-power drift of DUT A sigle poit power referece easureet i the begiig ad at the ed of the easureet procedure is recoeded to oitor the power drift of the DUT. Based o TX-power drift easureets for typical 3G UE the deteriatio of this cotributio is perfored by easurig the Tx-power drift ad the value shall be icluded i the ucertaity budget. I order to iiize Tx-power drift error it s recoeded to iterleave sesitivity ad power easureet of ultiple chaels. This spreads the easureets over a loger period, which helps to average the drift of the TXpower. E. Ucertaity related to the use of phato E.. Ucertaity fro usig differet types of SAM phato This ucertaity cotributio origiates fro the fact that differet laboratories ay use the two differet versios of SAM head: the SAM head phato or the SAM phato icludig the head ad the shoulders. The stadard SAM head is the specified phato. However, the use of the other type of SAM is also allowed with the requireet that the resultig ucertaity cotributio is take ito accout i the ucertaity budget. E.. Siulated tissue liquid ucertaity This ucertaity will occur, if the laboratory uses a liquid which has dielectric paraeters deviatig fro the target paraeters give i chapter Aex A. The relative dielectric costat (ε r ) ad coductivity (σ) of used aterial shall be aitaied withi ±5% of target properties listed i Aex A. To covert electrical paraeters of the tissue stiulat ε r ad σ to ucertaity values followig equatio shall be used: U electrical = 0.5dB ε r ε ε r _ t arget r _ t arget 5% σ r σ + σ + 5% r _ t arget r _ t arget E..3 Device Holder This ucertaity cotributio origiates fro iteractio of the Device Holder (the supportig structure of low-loss dielectric aterial that is used to hold the hadset uder-test i the desired positio durig easureet, as defied i the IEEE 58) ad the DUT. The Device Holder Ucertaity cotributio depeds o the differet laboratories ipleetatio ad o the shape ad aufacturig aterial. The Device Holder has a ifluece that varies with the relative positio with respect to the DUT Atea. Due to this the Device Holder should be desiged to have axiu distace betwee Device Holder ad DUT Atea. The fixed value 0. db is used to estiate the ipact of device

117 6 holder i ucertaity calculatio. The deteriatio of this cotributio is perfored by easurig the TR ad TRS with ad without the holder. E..4 Ucertaity of dielectric properties ad shape of the had phato TBD E..5 Ucertaity fro usig differet types of Laptop Groud lae phato This ucertaity cotributio origiates fro the fact that differet laboratories ay use differet variatios of Laptop Groud lae phato. Based o Sectio 5..3, the stadard Laptop Groud lae is the specified phato. E.3 Coarse saplig grid Degreasig of saplig desity to fiite aout of saples affects the easureet ucertaity by two differet errors. First is due to iadequate uber of saples ad secod is a systeatic discriiatio approxiatio error i TR ad TRS equatios. The offset of systeatic approxiatio error ca be expressed by usig forula N π Offset = 0 log0 si( θ ). N where N is uber of agular itervals i elevatio, θ is elevatio. Saplig Grid Error 0 Offset of TR/TRS [db] Saple Step [ ] Figure E.7. Approxiatio error of TR/TRS.

118 7 The 0 or 5 saplig grid used i TR easureets has bee show to itroduce oly very sall differeces as copared to the results obtaied with deser grids, so with that saplig grid the ucertaity cotributio ca assued egligible. Whe usig saple step size of 5-30, stadard ucertaity of 0.5dB ca be assued to cover errors. E.4 Rado ucertaity The rado ucertaity characterizes the udefied ad iscellaeous effects which caot be forecasted. Oe ca estiate this type of ucertaity with a repeatability test by akig a series of repeated easureet with a referece DUT without chagig aythig i the easureet set-up. The rado ucertaity differs fro oe laboratory to aother. Moreover, each DUT has its ow electroagetic behaviour ad rado ucertaity. Soe ucertaity also occurs fro the positioig of the DUT agaist the SAM phato, as the DUT caot be attached exactly i the sae way every tie. This ucertaity depeds o how uch the DUT's positioig agaist the SAM phato varies fro the specified testig positios. It is oted that the ucertaity of the phoe positioig depeds o the phoe holder ad the easureet operator ad is i fact difficult to distiguish fro rado ucertaity. Soe ucertaity also occurs fro the positioig of the DUT plugged ito the Laptop Groud lae phato, as the DUT ay ot be plugged ito the USB coector ad positioed exactly i the sae way every tie. This ucertaity depeds o how uch the DUT's positio plugged ito the Laptop Groud lae phato varies fro the specified plug-i positio. Therefore, the positioig ucertaity is icluded i rado ucertaity. To estiate this ucertaity for the SAM phato, it is suggested to perfor at least five evaluatios of TR/TRS whereby the device shall be disouted ad ewly positioed with a fully charged battery before each tests. This easureet set has to be carried out i id chael of lowest ad highest frequecy bads utilized by the testig lab, for at least three phoes with differet type of echaical desig. The values have to be oralized by the ea for each easureet set. As a result the ucertaity cotributio etered to ucertaity budget is the differece betwee the axiu ad iiu oralized value. To estiate this ucertaity for the Laptop Groud lae phato, it is suggested to perfor at least five evaluatios of TR/TRS for the plug-i positio whereby the device shall be disouted ad ewly positioed before each tests. This easureet set has to be carried out i id chael of lowest ad highest frequecy bads utilized by the testig lab, for at least three USBs with differet type of echaical desig. The values have to be oralized by the ea for each easureet set. As a result the ucertaity cotributio etered to ucertaity budget is the differece betwee the axiu ad iiu oralized value. E.5 Ucertaity of etwork aalyzer This ucertaity icludes the all ucertaities ivolved i the S easureet with a etwork aalyzer, ad will be calculated fro the aufacturer s data i logs with a rectagular distributio, uless otherwise ifored, (see clause 5.. i [6]). E.6 Ucertaity of the gai/efficiecy of the calibratio atea The calibratio atea oly appears i Stage. Therefore, the gai/efficiecy ucertaity has to be take ito accout. This ucertaity will be calculated fro the aufacturer s data i logs with a rectagular distributio, uless otherwise ifored (see clause 5.. i [6]). If the aufacturer s data do ot give the iforatio, the value has to be checked, see aex A- i [5]

119 8 E.7 Base statio siulator: ucertaity of the absolute level The trasitter device (typically a BS Siulator) is used to drive a sigal to the hor atea i sesitivity tests either as a absolute level or as a relative level. Receivig device used is typically a UE/MS. Geerally there occurs ucertaity cotributio fro liited absolute level accuracy ad o-liearity of the BS Siulator. For practical reasos, the calibratio easureet (Stage ) should be oly perfored with the probe atea as a receiver. Hece, the ucertaity o the absolute level of the trasitter device caot be assued as systeatic. This ucertaity should be calculated fro the aufacturer s data i logs with a rectagular distributio, uless otherwise ifored (see clause 5.. i [6]). Furtherore, the ucertaity of the o-liearity of the device is icluded i the absolute level ucertaity. E.8 BER easureet: output level step resolutio Whe output power of the BS siulator is swept to reach the BER target, used power step resolutio creates this ucertaity. Output power step used i the BER easureet is divided by factor to obtai the ucertaity with rectagular distributio. E.9 Statistical ucertaity of the BER easureet To study statistical ucertaity of BER easureet, see docuet TR , sectio 6.6 [4]. For a full TRS easureet with a regular saplig grid, the statistical ucertaity ca be approxiated by usig the followig forula: U SigleTRS U fulltrs =, N 4 Where U SigleTRS is the statistical ucertaity of sigle easureet, N is the uber of easureets. E.9. WCDMA For a BER target of %±0.% usig 0000 bits, ucertaity of 0.9 db for a sigle easureet ca be used. Usig a BER target of 0%±% with 0000 tested bits will lead to ucertaity of 0.46dB for a sigle easureet. If o stadard settigs are used to deterie EIS the statistical error of the easureet should be estiated accordig to docuet TR E.9. GSM For a BER target of.00%±0.% usig 0000 bits, ucertaity of 0.3 db for a sigle easureet ca be used. If o stadard settigs are used to deterie EIS the statistical error of the easureet should be estiated accordig to docuet TR For a BLER target of 0%±% with 0000 tested bits will lead to ucertaity of 0.46dB for a sigle easureet. If o stadard settigs are used to deterie EIS the statistical error of the easureet should be estiated accordig to docuet TR

120 9 E.9.3 TD-SCDMA For a BER target of % ± 0.% usig bits, ucertaity of 0.3 db for a sigle easureet ca be used. If o stadard settigs are used to deterie EIS the statistical error of the easureet should be estiated accordig to docuet TR E.0 BER oralizatio ucertaity This ucertaity occurs oly whe o stadard settigs are used to speed up TRS easureet. It ca be calculated usig followig forula: U or U SigleTRSref U SigleTRSfast + =, N ref Where U SigleTRSref is the statistical ucertaity of the used referece easureet, U SigleTRSfast is the statistical ucertaity of the o stadard easureet, Nref Is the uber of easured referece poits. E. DUT sesitivity drift Due to statistical ucertaity of BER easureet, drift i the TRS ca ot be oitored siilarly to TR. A ucertaity value of 0.dB ca be used, or the TRS drift should be easured, with a setup correspodig to the actual TRS easureet. E. Cable loss easureet ucertaity Before perforig the calibratio, cable losses have to be easured. This easureet icludes a stadard ucertaity, which is coposed of the isatch, ad the isertio loss ucertaities. I the calibratio easureet, the trasitter part is coposed with the calibratio atea, cables, ad sigal geerator. The receiver part is coposed with the probe atea, cables, ad easureet device. The cable loss of trasitter ad receiver parts should be easured separately. By this way, the cable losses will be copliat with the cable routig of the calibratio stage. O the opposite, if the cable losses were easured together at the sae tie, the easured values would iclude errors fro iscellaeous isatch cotributios, which do ot appear i the cable routig of the calibratio stage. The cable loss easureet ucertaity is the result of the RSS of the ucertaity cotributios listed i Table E.4.

121 0 Table E.4: Ucertaity cotributios i the cable loss easureet Descriptio of ucertaity cotributio Misatch ucertaity of cable(s) receiver part Isertio loss of the cable(s) receiver part Measureet device: absolute level ucertaity Measureet device: liearity Misatch ucertaity of cable(s) trasitter part Isertio loss of the cable(s) trasitter part Sigal geerator: absolute output level ucertaity Sigal geerator: output level stability ucertaity Cable loss easureet ucertaity (RSS) Stadard Ucertaity (db) E.3 Sigal geerator: ucertaity of the absolute output level The sigal geerator is oly used at this stage. It substitutes the DUT by feedig the calibratio atea with a kow power level. The use of this sigal geerator itroduces a ucertaity o the absolute output level. This ucertaity will be calculated fro the aufacturer s data i logs with a rectagular distributio (see clause 5.. i [6]). E.4 Sigal geerator: output level stability The ucertaity o the output level stability has to be take ito accout oly whe the ucertaity of the absolute level is ot cosidered. This ucertaity will be calculated fro the aufacturer s data i logs with a rectagular distributio (see clause 5.. i [6]). E.5 Isertio loss: Calibratio atea feed cable The feed cable of the calibratio atea oly appears i Stage. As a result, this ucertaity has to be take ito accout. This ucertaity will be easured or calculated fro the aufacturer s data i logs with a rectagular distributio (see clause 5.. i [6]). E.6 Isertio loss: Calibratio atea atteuator (if used) If a calibratio atea atteuator is used, it oly appears i Stage. As a result, this ucertaity has to be take ito accout. This ucertaity will be calculated fro the aufacturer s data i logs with a rectagular distributio (see clause 5.. i [6]). E.6.A Chaber Statistical Ripple ad Repeatability The ucertaity due to chaber statistics is deteried by repeated calibratio easureets as described i Aex G.A. This ucertaity cotributio is a coposite value cosistig of ost of the specific reverberatio chaber cotributios, such as liited uber of odes ad ode-stirrig techiques.

122 The ucertaity cotributio value shall be deteried by easureets as described i Aex G.A ad be assued to have a oral distributio. E.6.B Additioal ower Loss i EUT Chassis Whe the EUT is sall ad do ot add oticeable loss to the chaber, the calibratio procedure outlied i sectio B., is perfored without the EUT preset i the chaber. The possible differece i average chaber trasissio level betwee the EUT easureet ad the referece easureet ust i this case be cosidered i the ucertaity evaluatio. The ucertaity value for this cotributio ca be tested epirically by choosig a uit withi a set of saples which is cosidered to icur the highest aout of loss (orally the largest uit), ad easure the average trasissio loss i the chaber with ad without the test uit preset i the chaber. The differece betwee the two cases shall be used i the ucertaity calculatio ad the distributio should be assued to be rectagular. Alteratively, a fixed value of 0. db with a rectagular distributio ca be used i the ucertaity calculatios. E.7 Exaples of ucertaity budget calculatios for TR(Iforative) Editor s ote: The followig aspects are either issig or ot yet deteried: The head ad had phato ad had oly phato cofiguratios are TBD

123 Ucertaity Source ) Misatch of receiver chai ) Isertio loss of receiver chai 3) Ifluece of the probe atea cable 4) Absolute atea gai of the probe atea 5) Measureet Receiver: ucertaity of the absolute level 6) Measureet distace a) Offset of DUT phase cetre 7) Quality of quiet zoe Table E.5: Exaple of ucertaity budget for head oly TR easureet Coet Ucertaity Value [db] rob Distr Div ci Stadard Ucertaity [db] STAGE (DUT easureet) Гpower eter <0.05 Гprobe atea coectio < U 0.04 Systeatic with Stage (=> cacels) 0 R 3 0 Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) 0 R R 3 0 ower Meter 0.06 R d= R Stadard deviatio of E-field i QZ easureet 0.5 N 0.5 8) DUT Tx-power drift Drift 0. R ) a) Ucertaity related to the use of SAM phato: b) Siulated tissue liquid ucertaity Stadard SAM head with stadard tissue siulat 0 R 3 0 Maxiu allowed error 0.5 R c) Effect of DUT holder Fixed value 0. R ) Coarse saplig grid Negligible, used ad Δ = 5. ϕ Δ θ = 5 0 N 0 ) Repeatability Mooblock, clashell, slide desig 0.4 R STAGE (Calibratio) Maufacturer s ucertaity ) Ucertaity of etwork calculator, covers whole NA aalyzer setup 0.5 R ) Misatch of receiver chai Take i to accout i NA setup ucertaity 0 U 0 4) Isertio loss of receiver chai 5) Misatch i the coectio of calibratio atea Systeatic with Stage (=> cacels) 0 R 3 0 Take i to accout i NA setup ucertaity 0 U 0 6) Ifluece of the feed cable of the calibratio atea Gai calibratio with a dipole 0.3 R ) Ifluece of the probe atea cable 8) Ucertaity of the absolute gai of the probe atea Systeatic with Stage (=> cacels) 0 R 3 0 Systeatic with Stage (=> cacels) 0 R 3 0 9) Ucertaity of the absolute gai of the calibratio atea Calibratio certificate 0.5 R ) Measureet distace: - Calibratio atea s displaceet ad d=3, d=0.05, θ= 0.9 R isaliget ) Quality of quiet zoe Stadard deviatio of e-field i QZ easureet, Gai calibratio 0.5 N 0.5

124 3 Cobied stadard ucertaity Expaded ucertaity (Cofidece iterval of 95 %) u c = i = c i u i ue =, 96 u c Table E.6: Exaple of ucertaity budget for TR head+had (speech ode) easureet TBD Table E.7: Exaple of ucertaity budget for TR had oly (browsig ode) easureet TBD

125 4 Table E.8: Exaple of ucertaity budget for TR easureet with laptop groud plae phato Ucertaity Source ) Misatch of receiver chai ) Isertio loss of receiver chai 3) Ifluece of the probe atea cable 4) Absolute atea gai of the probe atea 5) Measureet Receiver: ucertaity of the absolute level 6)Measureet distace a) Offset of DUT phase ceter 7) Quality of quiet zoe Coet STAGE (DUT easureet) Гpower eter <0.05 coectio <0.6 Гprobe atea Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) Ucertaity Value [db] rob Distr Div 0.05 N R 0 0 R R 3 0 ower Meter 0.06 R d= R Stadard deviatio of E-field i QZ easureet 0.5 N 0.5 8) DUT Tx-power drift Drift 0. R ) Ucertaity related to the use of laptop groud plae phato: 0) Coarse saplig grid ) Repeatability ) Ucertaity of etwork aalyzer Stadard laptop phato 0 R 3 0 Negligible, used ad Δ = 5. ϕ Δ θ = 5 0 N 0 horizotal USB desig, rotary USB porter, ad o-rotary 0.4 R USB porter used for testig STAGE (Calibratio) Maufacturer's ucertaity calculator, covers whole NA 0.5 R setup 3) Misatch of receiver chai Take i to accout i NA setup ucertaity 0 U 0 4) Isertio loss of receiver chai Systeatic with Stage (=> cacels) 0 R 3 0 5) Misatch i the coectio of Take i to accout i NA calibratio atea setup ucertaity 0 U 0 6) Ifluece of the feed cable of the calibratio atea Gai calibratio with a dipole 0.3 R ) Ifluece of the probe atea Systeatic with Stage (=> cable cacels) 0 R 3 0 8) Ucertaity of the absolute Systeatic with Stage (=> gai of the probe atea cacels) 0 R 3 0 9) Ucertaity of the absolute gai of the calibratio atea Calibratio certificate 0.5 R )Measureet distace: Calibratio atea's displaceet ad isaliget d=3, d=0.05, θ= 0.9 R ) Quality of quiet zoe Stadard deviatio of e-field i QZ easureet, Gai calibratio Cobied stadard ucertaity Expaded ucertaity (Cofidece iterval of 95 %) u c = i = c i u i 0.5 N 0.5 ci Stadard Ucertaity [db] 0.89 ue =, 96 u c.75

126 5 E.8 Exaples of ucertaity budget calculatios for TRS(Iforative) Ucertaity Source ) Misatch of trasitter chai ) Isertio loss of trasitter chai 3) Ifluece of the probe atea cable 4) Absolute atea gai of the probe atea 5) Base statio siulator: ucertaity of the absolute level 6) BER easureet: output level step resolutio 7) Statistical ucertaity of the BER easureet 8) TRS data rate oralizatio 9) Measureet distace a) Offset of DUT phase cetre 0) Quality of quiet zoe Table E.9: Exaple of ucertaity budget for TRS head oly easureet ГBSS <0.3 Coet Г atea coectio <0.03 Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) Ucertaity Value [db] STAGE (DUT easureet) rob Distr Div ci Stadard Ucertaity [db] 0.0 N R R R 3 0 R Step 0.dB 0.05 R BER target 0%±%, 0000 tested bits, N=60 0. N 0. 4 referece poits easured 0. N 0. d= R Stadard deviatio of E-field i QZ easureet 0.5 N 0.5 ) DUT sesitivity drift Drift easureet 0. R 3 0. ) a) Ucertaity related to the use of SAM phato: b) Siulated tissue liquid ucertaity Stadard SAM with stadard tissue siulat 0 R 3 0 Maxiu allowed error 0.5 R c) Effect of DUT holder Fixed value 0. R ) Coarse saplig grid Δ θ = 30 ad Δ ϕ = N N 0.5 4) Repeatability Mooblock, clashell, slide desig STAGE (Calibratio) 0.5 R ) Ucertaity of etwork aalyzer 6) Misatch of trasitter chai 7) Isertio loss of trasitter chai 8) Misatch i the coectio of calibratio atea 9) Ifluece of the feed cable of the calibratio atea 0) Ifluece of the probe atea cable ) Ucertaity of the absolute gai of the probe atea Maufacturer s ucertaity calculator, covers NA setup 0.5 R Take i to accout i NA setup ucertaity 0 U 0 Systeatic with Stage (=> cacels) 0 R 3 0 Take i to accout i NA setup ucertaity 0 R 3 0 Gai calibratio with dipole 0.3 R Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) 0 R R 3 0

127 6 ) Ucertaity of the absolute gai of the Calibratio certificate 0.5 R calibratio atea 3) Measureet distace: Calibratio atea s displaceet ad isaliget d=3, d=0.05, θ= 0.9 R ) Quality of quiet zoe Stadard deviatio of E-field i QZ easureet 0.5 N 0.5 Cobied stadard ucertaity Expaded ucertaity (Cofidece iterval of 95 %) u c = i = c i u i ue =, 96 u c.7.9 TBD Table E.0: Exaple of ucertaity budget for TRS head+had (speech ode) easureet TBD Table E.: Exaple of ucertaity budget for TRS had oly (browsig ode) easureet

128 7 Table E.: Exaple of ucertaity budget for TRS easureet with laptop groud plae phato Ucertaity Source Coet STAGE (DUT easureet) ГBSS <0.3 Г atea coectio Ucertaity Value [db] rob Distr ) Misatch of trasitter chai < N 0.0 ) Isertio loss of trasitter chai Systeatic with Stage (=> cacels) 0 R 3 0 3) Ifluece of the probe atea Systeatic with Stage (=> cable cacels) 0 R 3 0 4) Absolute atea gai of the Systeatic with Stage (=> probe atea cacels) 0 R 3 0 5) Base statio siulator: ucertaity of the absolute level R )BER easureet: output level step resolutio Step 0.dB 0.05 R ) Statistical ucertaity of the BER BER target 0%±%, 0000 easureet tested bits, N=60 0. N 0. 8)TRS data rate oralizatio 4 referece poits easured 0. N 0. 9)Measureet distace a) Offset of DUT phase ceter d= R ) Quality of quiet zoe Stadard deviatio of E-field i QZ easureet 0.5 N 0.5 ) DUT sesitivity drift Drift easureet 0. R ) Ucertaity related to the use of laptop groud plae phato Stadard laptop phato 0 R 3 0 3) Coarse saplig grid Δ θ = 30 ad Δ ϕ = N N 0.5 4) Repeatability horizotal USB desig, rotary USB porter, ad o-rotary USB porter used for testig 0.5 R STAGE (Calibratio) 5) Ucertaity of etwork aalyzer Maufacturer's ucertaity calculator, covers NA setup 0.5 R ) Misatch of trasitter chai Take i to accout i NA setup ucertaity 0 U 0 7) Isertio loss of trasitter Systeatic with Stage (=> chai cacels) 0 R 3 0 8) Misatch i the coectio of Take i to accout i NA setup calibratio atea ucertaity 0 R 3 0 9) Ifluece of the feed cable of the calibratio atea Gai calibratio with dipole 0.3 R ) Ifluece of the probe atea Systeatic with Stage (=> cable cacels) 0 R 3 0 ) Ucertaity of the absolute Systeatic with Stage (=> gai of the probe atea cacels) 0 R 3 0 ) Ucertaity of the absolute gai of the calibratio atea Calibratio certificate 0.5 R )Measureet distace: Calibratio atea's displaceet d=3, d=0.05, θ= 0.9 R ad isaliget 4) Quality of quiet zoe Stadard deviatio of E-field i QZ easureet 0.5 N 0.5 Cobied stadard ucertaity Expaded ucertaity (Cofidece iterval of 95 %) u c = i = c i u i Div ci Stadard Ucertaity [db]. ue =, 96 u c.6

129 8

130 9 E.9 Exaples of ucertaity budget calculatios for TR, reverberatio chaber ethod (Iforative)

131 30 Table E.3: Exaple of ucertaity budget for TR easureet, reverberatio chaber ethod Ucertaity Source ) Misatch of receiver chai ) Isertio loss of receiver chai 3) Ifluece of the fixed easureet atea cable 4) Absolute atea gai of the fixed easureet atea 5) Measureet Receiver: ucertaity of the absolute level 6) Chaber statistical ripple ad repeatability 7) Additioal power loss i EUT chassis Coet Ucertaity Value [db] STAGE (DUT easureet) Гpower eter <0.05 Гfixed easureet atea coectio <0.6 Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) rob Distr Div ci Stadard Ucertaity [db] 0.05 U R R R 3 0 ower Meter 0.06 R Statistics of chaber 0.4 N 0.4 The EUT ot preset i the chaber durig calibratio easureet 0. R ) DUT Tx-power drift Drift 0. R ) a) Ucertaity related to the use of SAM phato: b) Siulated tissue liquid ucertaity Stadard SAM head with stadard tissue siulat 0 R 3 0 Maxiu allowed error 0.5 R c) Effect of DUT holder Fixed value 0. R ) Repeatability ) Ucertaity related to the use of Laptop Groud lae phato Usig the sae setup ad stirrig sequece Stadard Laptop Groud lae phato 0.4 R [0] R 3 [0] STAGE (Calibratio) Maufacturer s ucertaity ) Ucertaity of etwork calculator, covers whole NA aalyzer setup 0.5 R ) Misatch of receiver chai Take i to accout i NA setup ucertaity 0 U 0 4) Isertio loss of receiver chai 5) Misatch i the coectio of calibratio atea Systeatic with Stage (=> cacels) 0 R 3 0 Take i to accout i NA setup ucertaity 0 U 0 6) Ifluece of the feed cable of the calibratio atea Gai calibratio with a dipole 0.3 R ) Ifluece of the fixed easureet atea cable 8) Ucertaity of the absolute gai of the fixed easureet atea Systeatic with Stage (=> cacels) 0 R 3 0 Systeatic with Stage (=> cacels) 0 R 3 0 9) Ucertaity of the absolute gai of the calibratio atea Calibratio certificate 0.5 R ) Chaber statistical ripple ad repeatability Statistics of chaber 0.5 N 0.5 Cobied stadard ucertaity u c = i = c i u i 0.88

132 3 Expaded ucertaity (Cofidece iterval of 95 %) ue =, 96 u c.73

133 3 E.30 Exaples of ucertaity budget calculatios for TRS, reverberatio chaber ethod (Iforative) Table E.4: Exaple of ucertaity budget for TRS easureet, reverberatio chaber ethod Ucertaity Source ) Misatch of trasitter chai ) Isertio loss of trasitter chai 3) Ifluece of the fixed easureet atea cable 4) Absolute atea gai of the fixed easureet atea 5) Base statio siulator: ucertaity of the absolute level 6) BER easureet: output level step resolutio 7) Statistical ucertaity of the BER easureet 8) TRS data rate oralizatio 9) Chaber statistical ripple ad repeatability 0) Additioal power loss i EUT chassis ГBSS <0.3 Coet Г atea coectio <0.03 Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) Systeatic with Stage (=> cacels) Ucertaity Value [db] STAGE (DUT easureet) rob Distr Div ci Stadard Ucertaity [db] 0.0 N R R R 3 0 R Step 0.dB 0.05 R BER target 0%±%, 0000 tested bits, N=60 0. N 0. 4 referece poits easured 0. N 0. Statistics of chaber 0.4 N 0.4 The EUT ot preset i the chaber durig calibratio easureet 0. R ) DUT sesitivity drift Drift easureet 0. R 3 0. ) a) Ucertaity related to the use of SAM phato: b) Siulated tissue liquid ucertaity Stadard SAM with stadard tissue siulat 0 R 3 0 Maxiu allowed error 0.5 R c) Effect of DUT holder Fixed value 0. R ) Repeatability 4) Ucertaity related to the use of Laptop Groud lae phato Usig the sae setup ad stirrig sequece Stadard Laptop Groud lae phato STAGE (Calibratio) 0.4 R [0] R 3 [0] 5) Ucertaity of etwork aalyzer 6) Misatch of trasitter chai 7) Isertio loss of trasitter chai 8) Misatch i the coectio of calibratio atea 9) Ifluece of the feed cable of the calibratio atea Maufacturer s ucertaity calculator, covers NA setup 0.5 R Take i to accout i NA setup ucertaity 0 U 0 Systeatic with Stage (=> cacels) 0 R 3 0 Take i to accout i NA setup ucertaity 0 R 3 0 Gai calibratio with dipole 0.3 R 3 0.7

134 33 0) Ifluece of the fixed easureet atea cable ) Ucertaity of the absolute gai of the fixed easureet atea ) Ucertaity of the absolute gai of the calibratio atea 3) Chaber statistical ripple ad repeatability Cobied stadard ucertaity Expaded ucertaity (Cofidece iterval of 95 %) Systeatic with Stage (=> cacels) 0 R 3 0 Systeatic with Stage (=> cacels) 0 R 3 0 Calibratio certificate 0.5 R Statistics of chaber 0.5 N 0.5 u c = i = c i u i ue =, 96 u c.07.09

135 34 Aex F (iforative): Suggested Recipes of Liquid to be used iside SAM hato I Tables F. F. are proposed two differet recipes of the liquid to be used iside the SAM phato. Table F.: Liquid recipe Copoet Mass % De-ioized Water 57. Twee NaCl 0.58 Table F.: Liquid recipe Copoet Mass % De-ioized Water 54.9 % Diethylee Glycol Butyl Ether (DGBE) (> 44.9 % 99 % pure) NaCl 0.8 %

136 35 Aex G (iforative): Aechoic Chaber Specificatios ad Validatio Method This Appedix presets the specificatios for the shielded aechoic chaber ad the validatio ethods. G. Shielded aechoic chaber specificatios To avoid eviroetal perturbatios the easureets shall be perfored i a shielded eclosure, preserved fro electroagetic disturbaces coig fro electroagetic eviroet (Radio ad TV broadcast, cellular, ISM equipet, etc ). The shieldig effectiveess shut be tested accordig to the EN stadard i the frequecy rage of 800 MHz up to 4 GHz. The recoeded level of the shieldig effectiveess is -00 db fro 800 MHz to 4 GHz. Testig of the shieldig effectiveess ca be perfored either before or after the istallatio of absorbers. G. Quiet Zoe reflectivity level validatio The perforace of aechoic chaber is typically evaluated fro reflectivity level R level i the quiet zoe. Reflectivity level is defied as power ratio of all sued reflected sigals r to direct sigal d fro atea: R level r = 0log. d To evaluate the quiet zoe reflectivity level, the cotributio of absorbig aterials, the atea positioig syste ad other costructios i the aechoic chaber should be easured. To easure accurately quality of the quite zoe i aechoic chaber a oi-directioal atea shall be used. Near oi-directioal three axes field-probes are available with fibre optic coectio thus iiizig cable effects. Because sesitivity of field probe is liited it shall be carefully checked that the field probe is operated at least 6dB above the oise floor of the probe. NOTE: The quiet zoe evaluatio should be perfored with the atea positioig syste i its place, i order to iclude its effect o the reflectivity level. G.. Descriptio of a practical ethod for Quiet Zoe characterizatio I the followig, a practical versio of the Free Space VSWR ethod is preseted. I the Free Space VSWR ethod the quality of quite zoe is easured fro aplitude ripple caused by reflectios iside the aechoic chaber. hase variatio of the direct sigal ad the reflected sigals is obtaied by ovig a fieldprobe i the quiet zoe. Aplitude ripple i the quiet zoe is caused by this phase variatio of reflected sigals ad the direct sigal fro atea. The figure below shows seve easurig positios.

137 36 Figure G.: Measureet positios with 50 separatio I each of the seve-easureet positio aplitude of power received by field-probe eas [db] is easured where is idex of easurig positio. Variace of easureet distace to the atea fro field-probe i differet easureet positios ca be copesated by followig equatio: = + eas where, d 0log( l ) d is distace to poit fro the atea, l is distace to cetre of quiet zoe fro the atea is ucorrected easureet value fro poit. eas The saple stadard deviatio of the electric field i the quiet zoe ca be calculated fro these distace corrected values or directly fro the easured values with the followig equatio: s = N N ( i ) i= where, N is uber of easureets positios is db average of all i is or eas G.3 FFS G.4 Stadard deviatio of electric field To obtai ore accurate picture of quality of quiet zoe, easureet described i previous chapter ca be doe fro ultiple directios ad polarizatios. Doig free space VSWR easureet fro differet directios i 5-degree

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