Type Ordering Code Package TAA 762 A Q67000-A2271 P-DIP-6-1 TAA 762 G Q67000-A2273 P-DSO-6-1 (SMD) TAA 765 A Q67000-A524 P-DIP-6-1
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1 Single Operational Amplifiers TAA 762 Bipolar IC Features Wide common-mode range Large supply voltage range Large control range Wide temperature range (TAA 762) High output frequency compensation Open collector output Applications Amplifier Comparator Level converter Driver P-DIP-6-1 P-DSO-6-1 Type Ordering Code Package TAA 762 A Q67000-A2271 P-DIP-6-1 TAA 762 G Q67000-A2273 P-DSO-6-1 (SMD) A Q67000-A524 P-DIP-6-1 G Q67000-A599-G403 P-DSO-6-1 (SMD) Particularly economic and versatile op amps. Owing to their excellent performance qualities they are well suited for a wide scope of applications, as in control engineering, automotive electronics, AF circuits, analog computers, etc. Semiconductor Group
2 Pin Configurations (top view) TAA 762 A A TAA 762 G G Circuit Diagram Semiconductor Group 2
3 C C = output frequency compensation; R L = load resistance (collector resistance) Connection Diagram Absolute Maximum Ratings (TAA 762) Parameter Symbol Limit Values Unit Supply voltage V S ± 18 V Output current I Q 70 ma Differential input voltage V ID ± V S V Junction temperature Storage temperature range T j T stg to 125 C C Thermal resistance system - air TAA 762 A TAA 762 G R th SA 115 R th SA 200 K/W K/W Operating Range (TAA 762) Supply voltage V S ± 1.5 to ± 18 V Ambient temperature T A 55 to 125 C Semiconductor Group 3
4 Characteristics (TAA 762) V S = ± 5 V to ± 15 V; R L = 2 kω, unless otherwise specified Parameter Symbol Limit Values T A = 25 C Limit Values T A = 55 to 125 C Unit min. typ. max. min. max. Open-loop supply current consumption I S ma Input offset voltage V IO mv Input offset current Input current I IO 100 ± 50 I I na µa Control range V S = ± 15 V R L = 620 Ω, V S = ± 15 V V S = ± 15 V, f = 100 khz V Qpp V Qpp V Qpp ± V V V Input impedance f = 1 khz Z I 200 kω Open-loop voltage gain f = 1 khz R L = 10 kω, f = 1 khz f = 1 MHz db db db Output reverse current I QR 1 5 µa Common-mode input voltage range V IC V S +2 V S 2 V S +3 V S 3 V Common-mode rejection k CMR db Supply voltage rejection G V = 100 k SVR µv/v Semiconductor Group 4
5 Characteristics (TAA 762) (cont d) V S = ± 5 V to ± 15 V; R L = 2 kω, unless otherwise specified Parameter Symbol Limit Values T A = 25 C Limit Values T A = 55 to 125 C Unit min. typ. max. min. max. Temperature coefficient of V lo Temperature coefficient of I IO α VIO α IIO µv/k na/k Slew rate of V Q for non-inverting operation (test circuit 1) Slew rate of V Q for inverting operation (test circuit 2) SR SR 9 18 V/µs V/µs Noise voltage (in acc. with DIN ; referred to input; R S = 2.5 kω) V n 3 µv Characteristics (TAA 762) V S = ± 2V;R L = 2 kω Input offset voltage V IO mv Input offset current Input current I IO I I na µa Open-loop voltage gain f = 1 khz db Semiconductor Group 5
6 Absolute Maximum Ratings () Parameter Symbol Limit Values Unit Supply voltage V S ± 18 V Output current I Q 70 ma Differential input voltage V ID ± V S V Junction temperature Storage temperature range T j T stg to 125 C C Thermal resistance system - air A G R th SA 115 R th SA 200 K/W K/W Operating Range () Supply voltage V S ± 1.5 to ± 18 V Ambient temperature T A 25 to 85 C Semiconductor Group 6
7 Characteristics () V S = ± 5 V to ± 15 V; R L = 2 kω, unless otherwise specified Parameter Symbol Limit Values T A = 25 C Limit Values T A = 25 to 85 C Unit min. typ. max. min. max. Open-loop supply current consumption I S ma Input offset voltage V IO mv Input offset current Input current I IO 200 ± 80 I I na µa Control range V S = ± 15 V R L = 620 Ω, V S = ± 15 V V S = ± 15 V, f = 100 khz V Qpp V Qpp V Qpp ± V V V Input impedance f = 1 khz Z I 200 kω Open-loop voltage gain f = 1 khz R L = 10 kω, f = 1 khz f = 1 MHz db db db Output reverse current I QR µa Common-mode input voltage range V IC V S +2 V S 2 V S +3 V S 3 V Common-mode rejection k CMR db Supply voltage rejection G V = 100 k SVR µv/v Semiconductor Group 7
8 Characteristics () (cont d) V S = ± 5 V to ± 15 V; R L = 2 kω, unless otherwise specified Parameter Symbol Limit Values T A = 25 C Limit Values T A = 25 to 85 C Unit min. typ. max. min. max. Temperature coefficient of V lo Temperature coefficient of I IO α VIO α VIO µv/k na/k Slew rate of V Q for non-inverting operation (test circuit 1) Slew rate of V Q for inverting operation (test circuit 2) SR SR 9 18 V/µs V/µs Noise voltage (in acc. with DIN ; referred to input; R S = 2.5 kω) V n 3 µv Characteristics () V S = ± 2V;R L = 2 kω Input offset voltage R G = 30 Ω V IO mv Input offset current Input current I IO I I na µa Open-loop voltage gain f = 1 khz db Semiconductor Group 8
9 C 1 for min. overshoot (approx. 22 pf) Test Circuit 1 for Slew Rate (non-inverting operation) C 2 causes a frequency-dependent compensation to reduce rise times (approx. 390 pf) C 1 for min. overshoot (approx. 3.9 pf) Test Circuit 2 for Slew Rate (inverting operation) Semiconductor Group 9
10 Transfer Characteristic Output Voltage versus Input Voltage V S = parameter, R L = 2 kω Saturation Voltage versus Output Current T A = 25 C Open-Loop Voltage Gain and Phase versus Frequency V S = ± 15 V; R L = 2 kω Frequency Dependence of Large Signal Modulation Output Voltage versus Frequency Semiconductor Group 10
11 Transfer Characteristic Output Voltage versus Input Voltage V S = ± 15 V; R L = parameter Common-Mode Voltage Range Common-Mode Input Voltage versus Supply Voltage Semiconductor Group 11
12 Open-Loop Voltage Gain versus Supply Voltage T A = 25 C, R L = 2 kω Input Current versus Supply Voltage Open-Loop Voltage Gain versus Load Resistance T A = 25 C Input Offset Voltage versus Load Resistance V S = ± 15 V Semiconductor Group 12
13 Input Offset Voltage versus Ambient Temperature R L = 2 kω; V S = ± 15 V Input Offset Current versus Ambient Temperature R L = 2 kω; V S = ± 15 V Input Current versus Ambient Temperature R L = 2 kω Open-Loop Voltage Gain versus Ambient Temperature R L = 2 kω; f = 1 khz Semiconductor Group 13
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