RD16HHF1 ubitx. Erhart DF3FY, as well as providing a fix for the audio pop. ubitx.net. about:reader?url=

Size: px
Start display at page:

Download "RD16HHF1 ubitx. Erhart DF3FY, as well as providing a fix for the audio pop. ubitx.net. about:reader?url="

Transcription

1 RD16HHF1 ubitx ubitx.net RD16HHF1 ubitx 7-8 minutes Erhart DF3FY, as well as providing a fix for the audio pop 1 of 8 3/7/18, 12:57 PM

2 problem, has upgraded his PA output stage with RD16HHF1s. Erhart suggests the IRF 510s are not ideal for portable field operation. The small output transformer represents a mismatch for power outputs greater than 5 W so he has incorporated a new output transformer. He is now achieving 18w output on 20m and 12w on 10m, with an average of 15w output on all bands. For details see his PDF file: fixes PA. John VK2ETA has done a strait replacement of the IRF510s with RD16HHF1s in his ubitx. You can see from the photo above that he has them installed cross-legged. John says, To replace the finals I simply cut the legs of the IRF510s about 3mm above the board and correspondingly cut and crossed over the drain and source pins of the RD16s to match, then soldered in place. What follows are the before and after values of output power 2 of 8 3/7/18, 12:57 PM

3 and PA current that John measured. All tests were done with the ubitx VR1 drive level in the same position of approx 60% of range. 1. IRF510s and main board at 12.1V. PA idle current checked at 0.20A total (factory setting) so assume 100mA in each final. (For info, Rx currents: 164mA no volume, about 209mA normal volume). At 7.1Mhz: 10W, total current: 1.79A, of which PA current: 1.31A, therefore main board current 0.48A At 14.2Mhz: 5.5W, total current: 1.39A, of which PA current: 1.0A, therefore main board current 0.39A At 21.2Mhz: 2.2W, total current: 0.95A, of which PA current: 0.53A, therefore main board current 0.42A At 28.1Mhz: 1.3W, total current: 0.95A, of which PA current: 0.53A, therefore main board current 0.42A 2. IRF510s with 16.5V, 13.8V for main board. PA total idle current checked at 0.21A. (For info, Rx currents: 188mA no volume, about 230mA normal volume). At 7.1Mhz: 19W, total current: 2.65A, of which PA current: 2.09A, therefore main board current 0.56A At 14.2Mhz: 11W, total current: 2.20A, of which PA current: 1.80A, therefore main board current 0.40A At 21.2Mhz: 5.5W, total current: 1.40A, of which PA current: 1.00A, therefore main board current 0.40A At 28.1Mhz: 2.2W, total current: 1.02A, of which PA current: 3 of 8 3/7/18, 12:57 PM

4 0.60A, therefore main board current 0.42A John hasn t managed to find a definitive reference for the safe and optimum values of the RD16HHF1s idle bias current but it seems to range from 200 to 500mA. He would not recommend long term usage of the 500mA bias used for these measurements and will reset his idle current to the mA range. 3. RD16HHF1s and main board at 12.1VDC, 250mA idle bias each (Total 0.5A PA idle current). At 7.1Mhz: 10W, PA current: 1.20A At 14.2Mhz: 9W, PA current: 1.21A At 21.2Mhz: 4.5W, PA current: 0.65A At 28.1Mhz: 5.5W, PA current: 0.95A 4. RD16HHF1s and main board at 12.1VDC, 500mA idle bias each (Total 1A PA idle current). At 7.1Mhz: 10W, PA current: 1.18A At 14.2Mhz: 9W, PA current: 1.26A At 21.2Mhz: 5W, PA current: 0.71A At 28.1Mhz: 6W, PA current: 1.11A 5. RD16HHF1s and main board at 13.8VDC, 500mA idle bias each (Total 1A PA idle current). At 7.1Mhz: 13.5W, PA current: 1.95A At 14.2Mhz: 13.5W, PA current: 1.93A At 21.2Mhz: 6W, PA current: 1.38A At 28.1Mhz: 9.5W, PA current: 1.79A John made the following observations: 4 of 8 3/7/18, 12:57 PM

5 A. The RD16HHF1 produces a much flatter power curve over frequency (in his device), although it shows a dip somewhere near the 15m band. B. The IRF510 can produce some nice power in the lower frequencies when increasing the PA supply voltage, but it comes at the price of a steep power drop at higher frequencies. C. The bias does not seem to influence the efficiency of the finals at full power with RD16HHF1, since biasing at 250 and 500mA produces essentially the same output for the same DC power input. Assuming distortion reduces with higher bias, can we assume a higher bias (within limits) is preferable? Any risk of thermal runaway? D. The board main current (which includes the current in the driving stages of the power amplifier) does not seem to change with frequency from 20m onwards. Is this because the gain is pretty constant? If so, most of the drop in power with increasing frequency seems to be in the IRF510s, supporting the results obtained with the RD16HHF1s. E. With the current ubitx PA circuit the RD16HHF1 seems limited in output, but without the appropriate test instruments he can t say where the limitation occurs. F. When he increased the drive through VR1, he noticed that at around 40% for the lower frequencies and at around 60% for the top frequencies he gets a compression effect. The output does not increase much more from increasing the drive 5 of 8 3/7/18, 12:57 PM

6 level. John left the drive gain at around 60% and got positive feedback on the voice quality on his first QSO on 40m. He assumes that any compression/clipping is not significant at that level (but he hasn t measured the sprectral purity). So since his target was around 10W on 10m and 10 to 15W on 40m minimum, he is pleased to have reached his goal just by changing out the finals to RD16HHF1s and supplying the board with 13.8VDC. This is below the 15.2/15V stated in the respective datasheets of the RD16HHF1. DK5LV experience with RD16HHF1s Henning Weddig DK5LV thanked John for his intensive research on the PA stage and commented that in his experience, the RD16HFF1 really needs a very high quiescent current of about 500 ma each, which is not good for a QRP design. He goes on to say, The output transformer plays an important role in the design. Normally a 1 to 4 impedance transformation (12.5 ohms to 50 ohms) is sufficient. Each transistor sees half of that impedance i.e ohm. The windings of the transformer must be capacitively compensated and the leakage inductance mimimised on the windings. Another big issue is the choke for the supply voltage: the commonly used centre-tapped transformer without the choke is not recommended. Ashhar Farhan uses two isolated chokes, and in my experience a bifilar wound choke is the 6 of 8 3/7/18, 12:57 PM

7 better choice. Reference Raj VU2ZAP made this 4 way female Dupont socket for mounting either the stock IRF510 or Mitsubishi parts such as the RD16HHF1 or RD15HHF1 in the finals circuit of his BITx40. You must first desolder and remove the stock IRF510. An extra hole is drilled in the circuit board to the left of the three existing holes for the stock IRF510. The new pin hole to the left of the regular 3 holes is wired to the gate pin of the IRF510. By reversing the RD16HHF1 orientation, and inserting in the left-most 3 pins of the socket, the device now substitutes for 7 of 8 3/7/18, 12:57 PM

8 the IRF510. But you can re-insert the IRF510 at any time by unplugging the MOSFET. Raj s parting comment is that you will need to think of a heat sink plate that fits this way! Reference 8 of 8 3/7/18, 12:57 PM

and succeed without going MAD!!! 2017

and succeed without going MAD!!! 2017 and succeed without going MAD!!! 2017 Good points of the design and kit? Nice, compact 45W HF-AMP (as claimed) Drive power requirements of 100mW for 45W out Uses MOS-FET (IRF-530) transistors as finals

More information

Hendricks QRP Kits BITX20A to BITX17A Conversion Instructions

Hendricks QRP Kits BITX20A to BITX17A Conversion Instructions Hendricks QRP Kits BITX20A to BITX17A Conversion Instructions 30 November 2008 Converting your BITX20A Kit to a BITX17A Kit is not all that complex. It only requires that you change crystals and some resonance

More information

G6ALU 20W FET PA Construction Information

G6ALU 20W FET PA Construction Information G6ALU 20W FET PA Construction Information The requirement This amplifier was designed specifically to complement the Pic-A-Star transceiver developed by Peter Rhodes G3XJP. From the band pass filter an

More information

The ROSE 80 CW Transceiver (Part 1 of 3)

The ROSE 80 CW Transceiver (Part 1 of 3) Build a 5 watt, 80 meter QRP CW Transceiver!!! Page 1 of 10 The ROSE 80 CW Transceiver (Part 1 of 3) Build a 5 watt, 80 meter QRP CW Transceiver!!! (Designed by N1HFX) A great deal of interest has been

More information

Design Considerations

Design Considerations Design Considerations APPLICATION NOTES: Multi-hole cores provide specialized shapes that are sometimes more useful than single hole devices. One example is wide band transformers where good coupling between

More information

Bitx Version 3 Linear Amplifier Assembly

Bitx Version 3 Linear Amplifier Assembly Bitx Version 3 Linear Amplifier Assembly The power supply section has 2 options. 1 - AC input and a higher voltage on the IRF510 and +12 volts to the bitx. 2 - +12 volts applied to both the final and the

More information

Medium Power 137kHz Linear Power Amplifier G4JNT Sept 2010

Medium Power 137kHz Linear Power Amplifier G4JNT Sept 2010 Medium Power 137kHz Linear Power Amplifier G4JNT Sept 2010 This project was conceived on the back of an envelope after running a WSPR beacon thorough my 600 Watt switch mode Power Amplifier, and setting

More information

Frequency Range: MHz. Efficiency: 10% Temperature Range: 0 to 60 C Max VSWR: 5:1. Class: Supply Voltage: 28.0V

Frequency Range: MHz. Efficiency: 10% Temperature Range: 0 to 60 C Max VSWR: 5:1. Class: Supply Voltage: 28.0V Part Number Revision 1.c Release Date July 24, 2007 Revision Notes Amplifier Name Technical Specifications Summary Frequency Range: 50-88 MHz P1dB: 60 Watts CW Class: A Supply Voltage: 28.0V Gain: 36dB

More information

Gallium Nitride MMIC Power Amplifier

Gallium Nitride MMIC Power Amplifier Gallium Nitride MMIC Power Amplifier August 2015 Rev 4 DESCRIPTION AMCOM s is an ultra-broadband GaN MMIC power amplifier. It has 21dB gain, and >41dBm output power over the 0.03 to 6GHz band. This MMIC

More information

ILER-40 AGC "ADD-ON" MINI-MODULE Last review November 1, 2012

ILER-40 AGC ADD-ON MINI-MODULE Last review November 1, 2012 ILER-40 AGC "ADD-ON" MINI-MODULE Last review November 1, 2012 ea3gcy@gmail.com Latest updates and news: www.qsl.net/ea3gcy PLEASE READ ALL INSTRUCTIONS COMPLETELY AT LEAST ONCE BEFORE STARTING. Installation

More information

MRF173. The RF MOSFET Line 80W, 175MHz, 28V. M/A-COM Products Released - Rev Product Image

MRF173. The RF MOSFET Line 80W, 175MHz, 28V. M/A-COM Products Released - Rev Product Image Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of this device make possible solid state transmitters for

More information

: Hacking Bitx Version3B, C: : 20mt to 40mt band: PART I

: Hacking Bitx Version3B, C: : 20mt to 40mt band: PART I : Hacking Bitx Version3B, C: : 20mt to 40mt band: PART I Fig 1: Bitx Ver3C SBL-1 20 Conversion for Bitx40 The picture in Fig1 is a Bitx3C SBL-1 for 40mt band, constructed from the Bitx Version 3C SBL-1

More information

A Termination Insensitive Amplifier for Bidirectional Transceivers

A Termination Insensitive Amplifier for Bidirectional Transceivers A Termination Insensitive Amplifier for Bidirectional Transceivers Wes Hayward, w7zoi, and Bob Kopski, k3nhi. 26 June 09 (converted to HTML on 27Dec09) The BITX-20 was the first of a now popular class

More information

1 of 7 12/20/ :04 PM

1 of 7 12/20/ :04 PM 1 of 7 12/20/2007 11:04 PM Trusted Resource for the Working RF Engineer [ C o m p o n e n t s ] Build An E-pHEMT Low-Noise Amplifier Although often associated with power amplifiers, E-pHEMT devices are

More information

A NEW LIFE FOR THE FT-290R TRANSCEIVER! By F5RCT

A NEW LIFE FOR THE FT-290R TRANSCEIVER! By F5RCT A NEW LIFE FOR THE FT-290R TRANSCEIVER! By F5RCT The FT290R is an old amateur radio workhorse which was a very popular transceiver during the 80 s. It is a 2metre multimode portable which can run with

More information

3 Circuit Theory. 3.2 Balanced Gain Stage (BGS) Input to the amplifier is balanced. The shield is isolated

3 Circuit Theory. 3.2 Balanced Gain Stage (BGS) Input to the amplifier is balanced. The shield is isolated Rev. D CE Series Power Amplifier Service Manual 3 Circuit Theory 3.0 Overview This section of the manual explains the general operation of the CE power amplifier. Topics covered include Front End Operation,

More information

GRID DIP METER DESIGN

GRID DIP METER DESIGN GRID DIP METER DESIGN BY G0CWA MAY 2013 This, my next offering of test equipment is an exceptionally useful item of test equipment with many uses, some are listed below. To coin a phrase given to me by

More information

GaAs MMIC Power Amplifier

GaAs MMIC Power Amplifier GaAs MMIC Power Amplifier AM83WM-BM-R AM83WM-FM-R December 214 REV DESCRIPTION AMCOM s AM83WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the.

More information

Efficiency: 68% Temperature Range: +0 to 60 C Max VSWR: 5:1. Class: Supply Voltage:

Efficiency: 68% Temperature Range: +0 to 60 C Max VSWR: 5:1. Class: Supply Voltage: Part Number Revision 2.C Release Date July 11 2007 Revision Notes - updated new format Amplifier Name Technical Specifications Summary Frequency Range: P1dB: Class: Supply Voltage: 88-108 MHz 750 Watts

More information

CHAPTER - 3 PIN DIODE RF ATTENUATORS

CHAPTER - 3 PIN DIODE RF ATTENUATORS CHAPTER - 3 PIN DIODE RF ATTENUATORS 2 NOTES 3 PIN DIODE VARIABLE ATTENUATORS INTRODUCTION An Attenuator [1] is a network designed to introduce a known amount of loss when functioning between two resistive

More information

Stereo 3.7W Class D Audio Amplifier

Stereo 3.7W Class D Audio Amplifier Stereo 3.7W Class D Audio Amplifier Created by Bill Earl Last updated on 2014-10-28 10:45:16 AM EDT Guide Contents Guide Contents Overview Specifications: What is a Class D Amplifier? Other Audio amps

More information

Application Notes High Performance Audio Amplifiers

Application Notes High Performance Audio Amplifiers High Performance Audio Amplifiers Exicon Lateral MOSFETs These audio devices are capable of very high standards of amplification, with low distortion and very fast slew rates. They are free from secondary

More information

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No # 05 FETS and MOSFETS Lecture No # 06 FET/MOSFET Amplifiers and their Analysis In the previous lecture

More information

Conventional Single-Switch Forward Converter Design

Conventional Single-Switch Forward Converter Design Maxim > Design Support > Technical Documents > Application Notes > Amplifier and Comparator Circuits > APP 3983 Maxim > Design Support > Technical Documents > Application Notes > Power-Supply Circuits

More information

Using a Linear Transistor Model for RF Amplifier Design

Using a Linear Transistor Model for RF Amplifier Design Application Note AN12070 Rev. 0, 03/2018 Using a Linear Transistor Model for RF Amplifier Design Introduction The fundamental task of a power amplifier designer is to design the matching structures necessary

More information

Application Note 5460

Application Note 5460 MGA-89 High Linearity Amplifier with Low Operating Current for 9 MHz to. GHz Applications Application Note 6 Introduction The Avago MGA-89 is a high dynamic range amplifier designed for applications in

More information

Current-mode PWM controller

Current-mode PWM controller DESCRIPTION The is available in an 8-Pin mini-dip the necessary features to implement off-line, fixed-frequency current-mode control schemes with a minimal external parts count. This technique results

More information

Building a Bitx20 Version 3

Building a Bitx20 Version 3 Building a Bitx20 Version 3 The board can be broken into sections and then built and tested one section at a time. This will make troubleshooting easier as any problems will be confined to one small section.

More information

High Current, High Power OPERATIONAL AMPLIFIER

High Current, High Power OPERATIONAL AMPLIFIER High Current, High Power OPERATIONAL AMPLIFIER FEATURES HIGH OUTPUT CURRENT: A WIDE POWER SUPPLY VOLTAGE: ±V to ±5V USER-SET CURRENT LIMIT SLEW RATE: V/µs FET INPUT: I B = pa max CLASS A/B OUTPUT STAGE

More information

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum 78% 23dB Gain NXP BLF184XR Mosfet

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum 78% 23dB Gain NXP BLF184XR Mosfet Model P600FM-184XR FM Pallet Amplifier This amplifier module is ideal for final output stages in FM Broadcast Applications. 87.5 108.1MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum 78%

More information

1562 P150-UHF-13. Frequency Range: MHz. Efficiency: 45% Temperature Range: 0 to 70 C Max VSWR: 1.5:1. Supply Voltage: 32.

1562 P150-UHF-13. Frequency Range: MHz. Efficiency: 45% Temperature Range: 0 to 70 C Max VSWR: 1.5:1. Supply Voltage: 32. 1562 Part Number P150-UHF-13 Amplifier Name 1562 P150-UHF-13 Revision 1.f Release Date July 9th 2007 Revision Notes Frequency Range: 470-860 MHz P1dB: 55 Watts CW Class: AB Supply Voltage: 32.0V Gain:

More information

PowerAmp Design. PowerAmp Design PAD117A RAIL TO RAIL OPERATIONAL AMPLIFIER

PowerAmp Design. PowerAmp Design PAD117A RAIL TO RAIL OPERATIONAL AMPLIFIER PowerAmp Design RAIL TO RAIL OPERATIONAL AMPLIFIER Rev J KEY FEATURES LOW COST RAIL TO RAIL INPUT & OUTPUT SINGLE SUPPLY OPERATION HIGH VOLTAGE 100 VOLTS HIGH OUTPUT CURRENT 15A 250 WATT OUTPUT CAPABILITY

More information

GaAs MMIC Power Amplifier

GaAs MMIC Power Amplifier GaAs MMIC Power Amplifier AM83WM-BM-R AM83WM-FM-R March 211 Rev 1 DESCRIPTION AMCOM s AM83WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the.

More information

Application Note 5038

Application Note 5038 MGA-6P8 Buffer Amplifier for 10 MHz Application Application Note 038 Introduction The MGA-6P8 is a high isolation buffer amplifier based on Avago Technologies EPHEMT process. This application note discusses

More information

Application Note 5379

Application Note 5379 VMMK-1225 Applications Information Application Note 5379 Introduction The Avago Technologies VMMK-1225 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the

More information

LBI-30398N. MAINTENANCE MANUAL MHz PHASE LOCK LOOP EXCITER 19D423249G1 & G2 DESCRIPTION TABLE OF CONTENTS. Page. DESCRIPTION...

LBI-30398N. MAINTENANCE MANUAL MHz PHASE LOCK LOOP EXCITER 19D423249G1 & G2 DESCRIPTION TABLE OF CONTENTS. Page. DESCRIPTION... MAINTENANCE MANUAL 138-174 MHz PHASE LOCK LOOP EXCITER 19D423249G1 & G2 LBI-30398N TABLE OF CONTENTS DESCRIPTION...Front Cover CIRCUIT ANALYSIS... 1 MODIFICATION INSTRUCTIONS... 4 PARTS LIST AND PRODUCTION

More information

10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1

10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1 10. Output Stages and Power Supplies 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1 10.1 Thermal Considerations Considerable power is dissipated as heat in power devices.

More information

High Voltage Power Operational Amplifiers EQUIVALENT SCHEMATIC R1 R2 C1 R3 Q6 4 CC1 5 CC2 Q8 Q12 3 I Q Q16. +V s

High Voltage Power Operational Amplifiers EQUIVALENT SCHEMATIC R1 R2 C1 R3 Q6 4 CC1 5 CC2 Q8 Q12 3 I Q Q16. +V s PA9 PA9 High Voltage Power Operational Amplifiers FEATURES HIGH VOLTAGE 4V (±5V) LOW QUIESCENT CURRENT ma HIGH OUTPUT CURRENT 0mA PROGRAMMABLE CURRENT LIMIT HIGH SLEW RATE 300V/µs APPLICATIONS PIEZOELECTRIC

More information

Frequently Asked Questions

Frequently Asked Questions Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 13 Lecture Title: Analog Circuits

More information

P D Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C

P D Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF151/D The RF MOSFET Line N Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz.

More information

PA92. High Voltage Power Operational Amplifiers PA92

PA92. High Voltage Power Operational Amplifiers PA92 PA9 High Voltage Power Operational Amplifiers FEATURES HIGH VOLTAGE V (±V) LOW QUIESCENT CURRENT ma HIGH OUTPUT CURRENT A PROGRAMMABLE CURRENT LIMIT APPLICATIONS PIEZOELECTRIC POSITIONING HIGH VOLTAGE

More information

HLV Instruction & Operations Manual. Content

HLV Instruction & Operations Manual. Content HLV-800-3 Instruction & Operations Manual Content 1 Chapter page 1. Certificate of conformity 3 2. Introduction 4 3. Safety instructions 5 4. Electrical connections 6 5. Warranty 7 6. Front panel operation

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS.

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS. Summer 2016 EXAMINATIONS Subject Code: 17321 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the answer scheme. 2) The

More information

GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E

GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E 9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:

More information

ERICSSONZ LBI-30398P. MAINTENANCE MANUAL MHz PHASE LOCKED LOOP EXCITER 19D423249G1 & G2 DESCRIPTION TABLE OF CONTENTS

ERICSSONZ LBI-30398P. MAINTENANCE MANUAL MHz PHASE LOCKED LOOP EXCITER 19D423249G1 & G2 DESCRIPTION TABLE OF CONTENTS MAINTENANCE MANUAL 138-174 MHz PHASE LOCKED LOOP EXCITER 19D423249G1 & G2 TABLE OF CONTENTS Page DESCRIPTION... Front Cover CIRCUIT ANALYSIS...1 MODIFICATION INSTRUCTIONS...4 PARTS LIST...5 PRODUCTION

More information

AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R

AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R DESCRIPTION AMCOM s is an ultra-broadband GaAs MMIC power amplifier. It has 22 db gain and 36dBm output power over the 0.01 to 3.5 GHz band. This MMIC is

More information

Power Amplifiers. Class A Amplifier

Power Amplifiers. Class A Amplifier Power Amplifiers The Power amplifiers amplify the power level of the signal. This amplification is done in the last stage in audio applications. The applications related to radio frequencies employ radio

More information

High Current High Power OPERATIONAL AMPLIFIER

High Current High Power OPERATIONAL AMPLIFIER OPA High Current High Power OPERATIONAL AMPLIFIER FEATURES WIDE SUPPLY RANGE: ±V to ±V HIGH OUTPUT CURRENT: A Peak CLASS A/B OUTPUT STAGE: Low Distortion SMALL TO- PACKAGE APPLICATIONS SERVO AMPLIFIER

More information

PA FAN PLATE ASSEMBLY 188D6127G1 SYMBOL PART NO. DESCRIPTION. 4 SBS /10 Spring nut. 5 19A702339P510 Screw, thread forming, flat head.

PA FAN PLATE ASSEMBLY 188D6127G1 SYMBOL PART NO. DESCRIPTION. 4 SBS /10 Spring nut. 5 19A702339P510 Screw, thread forming, flat head. MAINTENANCE MANUAL 851-870 MHz, 110 WATT POWER AMPLIFIER 19D902797G5 TABLE OF CONTENTS Page DESCRIPTION.............................................. Front Page SPECIFICATIONS.................................................

More information

RF Solid State Driver for Argonne Light Source

RF Solid State Driver for Argonne Light Source RF olid tate Driver for Argonne Light ource Branko Popovic Lee Teng Internship University of Iowa Goeff Waldschmidt Argonne National Laboratory Argonne, IL August 13, 2010 Abstract Currently, power to

More information

1 FUNCTIONAL DESCRIPTION WAY SPLITTER/INPUT BOARD FET RF AMPLIFIERS WAY POWER COMBINER VSWR CONTROL BOARD...

1 FUNCTIONAL DESCRIPTION WAY SPLITTER/INPUT BOARD FET RF AMPLIFIERS WAY POWER COMBINER VSWR CONTROL BOARD... CONTENTS 1 FUNCTIONAL DESCRIPTION...1 2 4-WAY SPLITTER/INPUT BOARD...2 3 FET RF AMPLIFIERS...3 4 4-WAY POWER COMBINER...4 5 VSWR CONTROL BOARD...5 6 ADJUSTMENT OF BIAS VOLTAGE TO ESTABLISH PROPER QUIESCENT

More information

Rx antennas at IV3PRK: the 4-Square Rx Vertical Array

Rx antennas at IV3PRK: the 4-Square Rx Vertical Array Rx antennas at IV3PRK: the 4-Square Rx Vertical Array Part 2: putting all stuff together and construction details Calculating the cable lengths by Pierluigi Luis Mansutti IV3PRK The most difficult choice,

More information

Copyright 2012, R. Eckweiler & OCARC, Inc. Page 1 of 5

Copyright 2012, R. Eckweiler & OCARC, Inc. Page 1 of 5 Heathkit of the Month #42: by Bob Eckweiler, AF6C Heathkit HD-1422-A Antenna Noise Bridge Introduction: If you work with antennas, an antenna noise bridge can be a very handy tool. Table 1 lists some of

More information

California Eastern Laboratories

California Eastern Laboratories California Eastern Laboratories AN143 Design of Power Amplifier Using the UPG2118K APPLICATION NOTE I. Introduction Renesas' UPG2118K is a 3-stage 1.5W GaAs MMIC power amplifier that is usable from approximately

More information

RF amplifier 70MHz on RA30H0608M

RF amplifier 70MHz on RA30H0608M RF amplifier 70MHz on RA30H0608M Peter SP2DMB 19.08.2014r. sp2dmb@gmail.com www.sp2dmb.blogspot.com www.sp2dmb.cba.pl The availability of a hybrid power amplifier allows easy to built RF power amplifier

More information

AMP CAMP AMP #1. Introduction. Requirements and Constraints. by Nelson Pass

AMP CAMP AMP #1. Introduction. Requirements and Constraints. by Nelson Pass AMP CAMP AMP #1 by Nelson Pass Introduction Do-It-Yourself audio is a great activity. Many major audio components are easily constructed and made to perform as well or better than what we see in the stores

More information

Model FM350 FM Broadcast Pallet Amplifier

Model FM350 FM Broadcast Pallet Amplifier Model FM350 FM Broadcast Pallet Amplifier Designed for FM radio transmitters, this amplifier incorporates the latest technology from ST Microelectronics. (Formerly known as SGS Thompson). 86 110MHz 48

More information

IF Digitally Controlled Variable-Gain Amplifier

IF Digitally Controlled Variable-Gain Amplifier 19-2601; Rev 1; 2/04 IF Digitally Controlled Variable-Gain Amplifier General Description The high-performance, digitally controlled variable-gain amplifier is designed for use from 0MHz to 400MHz. The

More information

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier TL082 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost high speed dual JFET input operational amplifiers with an internally trimmed input offset voltage

More information

1. Summary. 15/08/2009 Philips Valve Amplifier Type LBH1015/01 Page 1 of 7. Valve PA Amplifier. Philips label Model Code LBH1015/01 Serial No 1080

1. Summary. 15/08/2009 Philips Valve Amplifier Type LBH1015/01 Page 1 of 7. Valve PA Amplifier. Philips label Model Code LBH1015/01 Serial No 1080 15/08/2009 Philips Valve Amplifier Type LBH1015/01 Page 1 of 7 1. Summary Valve PA Amplifier. Philips label Model Code LBH1015/01 Serial No 1080 Two input, mono 60W amplifier with tone control and 50V/70V/100V

More information

HIGH POWER DUAL OPERATIONAL AMPLIFIER

HIGH POWER DUAL OPERATIONAL AMPLIFIER MILPRF8 CERTIFIED M.S.KENNEDY CORP. HIGH POWER DUAL OPERATIONAL AMPLIFIER 707 Dey Road Liverpool, N.Y. 088 () 7067 FEATURES: Space Efficient Dual Power Amplifier Low Cost High oltage Operation: 0 Low Quiescent

More information

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1250W minimum Up to 85% efficiency 22dB Gain NXP MRF1K50 Mosfet Planar RF Transformers

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1250W minimum Up to 85% efficiency 22dB Gain NXP MRF1K50 Mosfet Planar RF Transformers Model MRF1K50-PLA FM Pallet Amplifier This amplifier module is ideal for final output stages in FM Broadcast Applications. 87.5 108.1MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1250W minimum Up to

More information

LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array

LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array General Description The LM389 is an array of three NPN transistors on the same substrate with an audio power amplifier similar to the LM386

More information

KN-Q10 Assembly Manual

KN-Q10 Assembly Manual KN-Q10 Assembly Manual Translated by Adam Rong, BD6CR/4 with permission from Ke Shi, BA6BF Edited by Stephen, VK2RH Revision B, Oct 14, 2010 Thank you for purchasing the KN-Q10 4 Band SSB/CW Dual Mode

More information

D. Gillespie Designs. SCA-35 Capacitor Board. Installation Manual. D. Gillespie Designs with EFB TM

D. Gillespie Designs. SCA-35 Capacitor Board. Installation Manual. D. Gillespie Designs  with EFB TM D. Gillespie Designs SCA-5 Capacitor Board with EFB TM Installation Manual D. Gillespie Designs www.tronola.com Thank you for choosing our SCA-5 Capacitor Board with *EFB. We feel it is the single most

More information

NOT RECOMMENDED FOR NEW DESIGNS

NOT RECOMMENDED FOR NEW DESIGNS M.S.KENNEDY CORP. HIGH POWER DUAL OPERATIONAL AMPLIFIER ISO900 CERTIFIED BY DSCC 0 707 Dey Road Liverpool, N.Y. 3088 (3) 7067 FEATURES: Operates In Class AB Or Class C Mode MILPRF383 CERTIFIED Low Cost

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-8 Junction Field

More information

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier TL082 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage

More information

THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs

THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 12 Lecture Title: Analog Circuits

More information

Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

More information

Field Effect Transistors

Field Effect Transistors Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,

More information

HLV-350. Instruction & Operations Manual

HLV-350. Instruction & Operations Manual HLV-350 Instruction & Operations Manual 1 Content Chapter page 1. Certificate of conformity 3 2. Introduction 4 3. Safety instructions 5 4. Electrical connections 6 5. Warranty 7 6. Front panel operation

More information

30 A Low-Side RF MOSFET Driver IXRFD631

30 A Low-Side RF MOSFET Driver IXRFD631 A Low-Side RF MOSFET Driver IXRFD Features High Peak Output Current Low Output Impedance Low Quiescent Supply Current Low Propagation Delay High Capacitive Load Drive Capability Wide Operating Voltage

More information

Code No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions

More information

IRF130, IRF131, IRF132, IRF133

IRF130, IRF131, IRF132, IRF133 October 1997 SEMICONDUCTOR IRF13, IRF131, IRF132, IRF133 12A and 14A, 8V and 1V,.16 and.23 Ohm, N-Channel Power MOSFETs Features Description 12A and 14A, 8V and 1V r DS(ON) =.16Ω and.23ω Single Pulse Avalanche

More information

HLV Instruction & Operations Manual

HLV Instruction & Operations Manual HLV-2000 Instruction & Operations Manual 1 Content Chapter page 1. Certificate of conformity 3 2. Introduction 4 3. Safety instructions 5 4. Electrical connections 6 5. Warranty 7 6. Front panel operation

More information

T/R Switches, Baluns, and Detuning Elements in MRI RF coils Xiaoyu Yang 1,2, Tsinghua Zheng 1,2 and Hiroyuki Fujita 1,2,3.

T/R Switches, Baluns, and Detuning Elements in MRI RF coils Xiaoyu Yang 1,2, Tsinghua Zheng 1,2 and Hiroyuki Fujita 1,2,3. T/R Switches, Baluns, and Detuning Elements in MRI RF coils Xiaoyu Yang 1,2, Tsinghua Zheng 1,2 and Hiroyuki Fujita 1,2,3 1 Department of Physics, Case Western Reserve University 2 Department of Radiology,

More information

Frequency Range: MHz. Efficiency: 80% Temperature Range: -20 to 65 C Max VSWR: 3:1. Class: Supply Voltage: 32.0V

Frequency Range: MHz. Efficiency: 80% Temperature Range: -20 to 65 C Max VSWR: 3:1. Class: Supply Voltage: 32.0V Part Number Revision 0.B Release Date October 19, 2007 Revision Notes Final production release Amplifier Name Technical Specifications Summary Frequency Range: 86-108 MHz P1dB: 500 Watts CW Class: C Supply

More information

ECEN 474/704 Lab 5: Frequency Response of Inverting Amplifiers

ECEN 474/704 Lab 5: Frequency Response of Inverting Amplifiers ECEN 474/704 Lab 5: Frequency Response of Inverting Amplifiers Objective Design, simulate and layout various inverting amplifiers. Introduction Inverting amplifiers are fundamental building blocks of electronic

More information

AM003536WM-BM-R AM003536WM-FM-R

AM003536WM-BM-R AM003536WM-FM-R AM0036WM-BM-R AM0036WM-FM-R DESCRIPTION AMCOM s is an ultra broadband GaAs MMIC power amplifier. It has 23 db gain, and 36 dbm output power over the 0.01 to 3.5 GHz band. This MMIC is in a ceramic package

More information

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db 100W Wide Band Power Amplifier 6GHz~18GHz Features Wideband Solid State Power Amplifier Psat: +50dBm Gain: 75 db Typical Supply Voltage: +48V On board microprocessor driven bias controller. Electrical

More information

RF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment

RF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment RF233 AMPLIFIER Typical Applications Broadband, Low Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low Power Applications Broadband Test Equipment Product Description

More information

Quad SPST JFET Analog Switch SW06

Quad SPST JFET Analog Switch SW06 a FEATURES Two Normally Open and Two Normally Closed SPST Switches with Disable Switches Can Be Easily Configured as a Dual SPDT or a DPDT Highly Resistant to Static Discharge Destruction Higher Resistance

More information

Basic Electronics Learning by doing Prof. T.S. Natarajan Department of Physics Indian Institute of Technology, Madras

Basic Electronics Learning by doing Prof. T.S. Natarajan Department of Physics Indian Institute of Technology, Madras Basic Electronics Learning by doing Prof. T.S. Natarajan Department of Physics Indian Institute of Technology, Madras Lecture 38 Unit junction Transistor (UJT) (Characteristics, UJT Relaxation oscillator,

More information

A 100-Watt Transmitter Using a Pair of VT1625s

A 100-Watt Transmitter Using a Pair of VT1625s 12/16/2007 6:00 PM VT1625 100 Watt Transmitter A 100-Watt Transmitter Using a Pair of VT1625s FIG. 10.6 A 100-watt transmitter for five bands, using salvaged TV power transformer and surplus 1625 amplifier

More information

APPLICATION NOTE. A Push-Pull 300 Watt Amplifier for MHz. APT9801 By: Richard Frey, P.E.

APPLICATION NOTE. A Push-Pull 300 Watt Amplifier for MHz. APT9801 By: Richard Frey, P.E. APT9801 By: Richard Frey, P.E. APPLICATION NOTE A Push-Pull 300 Watt Amplifier for 81.36 MHz Reprinted from the April 1998 issue of Applied Microwave and Wireless Magazine courtesy of Noble Publishing

More information

LM386 Low Voltage Audio Power Amplifier

LM386 Low Voltage Audio Power Amplifier LM386 Low Voltage Audio Power Amplifier General Description The LM386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part

More information

Dual FET-Input, Low Distortion OPERATIONAL AMPLIFIER

Dual FET-Input, Low Distortion OPERATIONAL AMPLIFIER www.burr-brown.com/databook/.html Dual FET-Input, Low Distortion OPERATIONAL AMPLIFIER FEATURES LOW DISTORTION:.3% at khz LOW NOISE: nv/ Hz HIGH SLEW RATE: 25V/µs WIDE GAIN-BANDWIDTH: MHz UNITY-GAIN STABLE

More information

(a) BJT-OPERATING MODES & CONFIGURATIONS

(a) BJT-OPERATING MODES & CONFIGURATIONS (a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base

More information

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier

TL082 Wide Bandwidth Dual JFET Input Operational Amplifier TL082 Wide Bandwidth Dual JFET Input Operational Amplifier General Description These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage

More information

Gallium Nitride MMIC Power Amplifier

Gallium Nitride MMIC Power Amplifier Gallium Nitride MMIC Power Amplifier AM47TM- AM47SD-2H August 15 Rev 2 DESCRIPTION AMCOM s AM47TM- is an ultra-broadband GaN MMIC power amplifier. It has db gain, and >46dBm output power over the.3 to

More information

TOP VIEW. Maxim Integrated Products 1

TOP VIEW. Maxim Integrated Products 1 19-1812; Rev ; 1/1 5mA, Low-Dropout, General Description The low-dropout linear regulator operates from a +2.5V to +5.5V supply and delivers a guaranteed 5mA load current with low 12mV dropout. The high-accuracy

More information

Application Note 5011

Application Note 5011 MGA-62563 High Performance GaAs MMIC Amplifier Application Note 511 Application Information The MGA-62563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies E-pHEMT process and

More information

Fast IC Power Transistor with Thermal Protection

Fast IC Power Transistor with Thermal Protection Fast IC Power Transistor with Thermal Protection Introduction Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area,

More information

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum Up to 85% efficiency 24dB Gain NXP BLF188XR Mosfet Planar RF Transformers

MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum Up to 85% efficiency 24dB Gain NXP BLF188XR Mosfet Planar RF Transformers Model P1000FM-188PLA FM Pallet Amplifier This amplifier module is ideal for final output stages in FM Broadcast Applications. 87.5 108.1MHz (FM BAND) 50 Volts Input/output 50 ohms Pout: 1000W minimum Up

More information

Hot Water for the K2. K1RFD Building the K2 More K2 Photos. Using an HW-101 as a 100-watt PA. Hot Water for the K2. EchoStation

Hot Water for the K2. K1RFD Building the K2 More K2 Photos. Using an HW-101 as a 100-watt PA. Hot Water for the K2. EchoStation Page 1 of 5 K1RFD Building the K2 More K2 Photos EchoStation Using an HW-101 as a 100-watt PA When I was a young ham in 1977, I saved money to buy and build a Heathkit HW-101. The rig has served me well

More information

CX7 Troubleshooting Index

CX7 Troubleshooting Index CX7 Troubleshooting Index Modification S/1 Newsletter Guide Board Description A/TO A/TO MODE Intermod V1,12 P4.4 A11 Shut off one 35 MHz osc in receive, done sn 244 A/TO Spur V1,12 P1 Reduce A/TO spur,

More information

ITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections

ITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections ITT Technical Institute ET215 Devices 1 Unit 6 Chapter 3, Sections 3.7-3.9 Chapter 3 Section 3.7 The Bipolar Transistor as a Switch Objectives: Explain how a transistor can be used as a switch 1. Compute

More information

PRACTICAL TRANSISTOR CIRCUITS

PRACTICAL TRANSISTOR CIRCUITS PRICE 15 CENTS PRACTICAL TRANSISTOR CIRCUITS * I. 12-Watt Power Amplifier 2. Light Flasher 3. Regulated Power Supply 6. Sinusoidal Power Oscillator 7. Electroni~ Photoflash Power Supply 4. Regulated Power

More information