Fully Automated Auto Scanning System VPD-ICPMS Expert

Transcription

1 Fully Automated Auto Scanning System VPD-ICPMS Expert

2 An indispensable tool for analysis of metallic impurities in Si wafer Developed in cooperation with Samsung Electronics Co., Ltd. Expert was developed for routine analysis of metallic impurities in Si wafers. A layer of a 6 to 18 wafer is decomposed using Vapor Phase Decomposition (VPD); the decomposed impurities are collected by a scan solution and then automatically analyzed by ICPMS. Expert s unique features eliminate many difficulties experienced with previous techniques: Integration with an ICPMS allows a fully automated VPD-ICPMS analysis (option). Specially designed, integrated autosampler and software allow automated operation of VPD system. FEATURES: The solution is automatically transported from the VPD to ICPMS eliminating the risk of contamination associated with manual sample handling. The VPD ICPMS checks the scan nozzle between wafers to ensure contamination level is within user defined parameters. Automatically monitors the contamination in the scan solution and switches if necessary. Automatically checks the QC solution between samples and triggers automatic recalibration when needed. Automatic vial cleaning option avoids cumbersome vial preparation VIS software displays results of sector or radial scan graphically. (Option) Inside Expert System 2

3 VPD CHAMBER FEATURES: Improved etching speed in Gas-tight VPD chamber made of PTFE and HF generation module with high purity PFA nebulizer. End Point Detector (Option) detects when the etching is complete by monitoring the film s thickness. Etching of Poly-Si, Bulk-Si, WSi, Ti and TiN films are available (Option). Gas-tight design VPD chamber Scan by Dual Scan Nozzle after Bulk etching PFA nebulizer Monitoring thickness of film by EPD 3

4 FEATURES: The wafer transfer robot is equipped with a mapping sensor to detect the precise location of wafers at each cassette (6 12 manual cassette or 12 FOSB). An optional barcode reader automatically reads the FOUP ID. Specially designed scan nozzle (Patented) allows recovery of 200 nm Si 3 N 4 film. Six different scanning patterns (Full scan, Radial scan, (Square)-Sector scan, Radial-Sector scan, Full-Bevel scan and Bevel scan) are available. Dual Scan Nozzle (Patent) allows scanning of rough surface (option). Teflon media ULPA filter maintains the Class 1 environment. Several interlocking sensors, HF leak detector and Liquid spill detector maintain a safe environment. CE mark, SEMI-S2 and S8 certified. Full integration and automation with OHT in a FAB is available (Option). Automated autosampler vial cleaning system avoids exchange of vials used for collecting scan solution (Option). Automated HF supply system from in-house HF line (Option). Scan of Silicon Nitride film Bevel Scan Sector scan setup 4 Radial scan results on VIS

5 Intelligent VPD-ICPMS software has been developed to integrate the Expert and ICPMS. FULLY AUTOMATED VPD-ICPMS PROCEDURE: 1. Mapping sensor identifies the location of the wafer 2. A preset recipe number automatically sets up the VPD time, scanning mode and volume of scan solution for each wafer. 3. The first wafer is automatically transferred to aligner and aligned without touching a bevel part. 4. The wafer is carried into the VPD chamber. HF vapor is generated by a PFA nebulizer and introduced to the chamber. A layer (ex: oxide or nitride) is decomposed and the etching is terminated by EPD or time. 5. The wafer is transferred to the Scan Stage and the special scanning nozzle draws up to 1.5mL of the scan solution. 6. The nozzle moves on the wafer and delivers 100µL of the scan solution to the wafer surface. The wafer is scanned according to the method prescribed in the recipe. 7. The Nozzle recovers the scanned solution from the wafer and it is collected in a vial. 8. While Expert is collecting the wafer samples, the VPD interface software (VIS) enables the ICPMS to analyze the standard solution and QC check solution (Automatic recalibration if needed) 9. The collected VPD samples are analyzed. 10. All wafer information is transferred to VIS and the wafer analysis data is recorded. 11. VIS provides automated QA/QC functions that check the correlation coefficient of calibration curves, minimum sensitivity and QC recovery. Sample results are checked against the pre-defined criteria and a pre-selected action is automatically pursued. (User is able to predetermine available actions). 12. The VPD for the 2nd wafer is preformed while the first wafer is scanned. 13. QC Check solution is analyzed automatically at preset intervals. (ex: 10 wafer samples) 14. If a contamination is detected, the scan nozzle is automatically cleaned with an extended cleaning process and a blank scan solution is analyzed. 15. In the event of scan solution contamination, another scan solution is automatically used. Main menu 5

6 STANDARD CONFIGURATION Two load ports (selection from the option). Wafer transfer robot module with mapping sensor. Fully automated VPD chamber and HF vapor generation system. High speed, precise aligner for 6 to 12 wafer. Fully automated wafer scanning stage and accurate X-Y-Z scanning arm and nozzle module. Scan solution recovery volume check. 2 Sample racks (40 vials/rack). Class 1 environment with Teflon ULPA filter media. Intelligent Expert operating software. Desktop PC with Windows XP. OPTION PVC panel upgrade 6 or 8 manual cassette module with position sensor. 12 FOUP opener module. 8 SMIF loader module. EPD with reflectometry module for VPD. Poly-silicon/Bulk-silicon etching module. Wafer drying module VPD and ICPMS integration module including autosampler and software. Integration with OHT SECS communication with CIM HOST Automated autosampler vial cleaning system. Automated chemical supply system. Bar-code reading module (ASAS) Automated Standard Addition System A model for 450mm wafer is available. UTILITY REQUIREMENTS Power: VAC, 6.0 kw, Single phase, 50/60Hz DIW: MPa, < 6 L/hour Filtered N 2 gas: MPa, < 50 L/min Dry air: MPa, < 50 L/min Oxygen: MPa, < 2 L/min Ventilation: 360 m 3 /hour, 2 liines Waste: 1 line Vacuum: < -60 kpa, Size: 1,975 (W) x 2,427 (D) x 2,200 (H) mm Weight: 1,400 kg ENVIRONMENT REQUIREMENTS Operating temperature: o C Operating humidity: 35-85%RH (Non-condensing) 6

7 7277 World Communications Drive Omaha, NE USA Phone: Fax: Web: Elemental Scientific 7