Comparative Study on Capacitive Pressure Sensor for Structural Health Monitoring Applications with Coventorware

Transcription

1 Comparative Study on Pressure Sensor for Structural Health Monitoring Applications with Coventorware Shivaleela.G 1, Dr. Praveen.J 2, Mahendra.HN 3, Nithya G 4 1M.Tech Student, Dept. of Electronics and Communication Engineering, Alva s Institute of Engg. & Technology, 2Dean Academic, Dept. of Electronics and communication Engineering, Alva s Institute of Engg. & Technology, 3Assistant professor, Dept. of Electronics and Communication Engineering, Alva s Institute of Engg. & Technology, 4JRF, Center for Nanomaterials & MEMS Center, Nitte Meenakshi Institute of Technology, yelahanka, Bangalore, Karnataka, India *** Abstract - This paper is mainly focuses on the design and simulation of capacitive sensor device for structural health monitoring applications using COVENTOWARE to obtain high sensitivity. MEMS based sensor has gained more attention in many fields such as automotive, industrial and biomedical applications. The capacitive sensor has its advantage over MEMS based piezoresistive sensors such as low power consumption, high sensitivity, IC compatibility, free from a temperature effects, etc. In this proposed work, the MEMS based capacitive sensor using 1-spring, 4-springs and 9-springs has been designed having a square diaphragm of length 10,000µm 10,000µm and thickness of 525µm using Finite Element Method (FEM) and the models are implemented using POLYMUMPs process flow. The design is analyzed for applied of 1Pa on the square diaphragm. The simulation analysis of the capacitive sensor is done using COVENTORWARE TURBO Key Words: MEMS, Sensitivity, sensor, POLYMUMPs, COVENTORWARE 1. INTRODUCTION Micro-Electro Mechanical Systems (MEMS) is a technology that shows evident exponential growth from last two decades in terms of device miniaturization as its feature size varies in micrometer range. A MEMS device has a many applications in the field of automobiles, Bio-medicals, microphones, communication, smart systems, underground oil explorations etc. [1]. Due to the recent development in the micro-scale fabrication technology, MEMS based sensors are being fictitious for the levels ranges from ultra-low to extraordinarily high. There are different kinds of MEMS sensor devices such as capacitive sensor, piezoelectric sensor, piezoresistive sensor etc. The piezoresistive type of sensors is considered as the first micro-machined sensor that yields to be mass created. The piezoresistive sensors are extremely temperature sensitive and high power consumption; hence they are not used for higher temperature applications [3]. The capacitive sensor is mainly gained attention for measuring of each absolute and differential. They also have the advantage of high sensitivity, low power consumption, less elementary noise floor and low temperature sensitivity. Additionally to those, it has high frequency permeability, compactness, low cost, ease to fabricate, smaller volume and high resolution [1]. In general, MEMS capacitive sensors are constructed using two parallel plates during which the upper plate consists of a thin flexible membrane called as diaphragm and therefore the lower plate is fixed or vice versa. These two parallel plates are separated by a dielectric material such as vacuum or air. Once the external is applied on the diaphragm membrane, it displaces the diaphragm thereby change in the gap between the two plates takes place, thus the capacitance is also changes [2]. The sensitivity of the capacitive sensors are directly depends upon the materials and structures used. 1.1 Literature Review In [3], the author have been designed the Square diaphragm length 1500μm 1500μm and separation gap between the top and bottom diaphragm was 196μm was demonstrated. The thickness of the diaphragm was 4μm with a center boss structure of diameter 150μm and thickness of 1μm. The uniform ranges from 10 kpa to 120 kpa had been applied on the diaphragm. The deflection sensitivities observed for the given range for normal diaphragm and bossed diaphragm was 2.02μm/kPa and 2.94μm/kPa. The design analysis is done using Comsol Multiphysics tool, that involves simulation results and performance analysis of MEMS based capacitive sensor using springs with square diaphragm. In [6], the authors have designed and analyzed the perforated MEMS capacitive sensor of length 50µm and gap between the plates is 3µm. The simulation is carried out using both COMSOL and Coventorware tools. The sensitivity of the model is increased with respect to increase in the applied. In the next section of the paper clearly gives the idea about a design and implementation of the capacitive sensor for 2017, IRJET Impact Factor value: ISO 9001:2008 Certified Journal Page 2641

2 different structures followed by a simulation results and discussions in third section. The fourth section finally concludes the overall design of the capacitive sensor. 2. DESIGN AND IMPLEMENTATION There are many methods are used in order to predict the capacitive sensor performance and to meet the desired specifications. The different structures of capacitive sensors were designed, analyzed and simulated using COVENTORWARE TURBO tool. Here the sensitivity of the models is analyzed and compared the results to have better sensitivity among them spring The first structure is a capacitive 1- spring attached which is designed and simulated in COVENTORWARE to obtain 3-D result. Before obtaining 3-D design, the layout has to be drawn which is shown in Fig 1. The substrate of the structure is attached with a one-spring at each corner of the square diaphragm. The spring is used to overcome the contact problem faced between the two parallel plates when the large amount of is applied on it. The structure is implemented using POLYMUMPs process flow. The design specifications required to construct the structure is listed in the table-1. into finite number of element and finds the solution to the each element. The meshed model of the capacitive sensor having 1-spring at each corner is shown in the Fig-2. Here the model can set names for different faces, hide layers, and define conductors. The structure is verified at applied of 1pa. Fig-2: Meshed model of capacitive 1- spring springs The second structure is a capacitive 4- springs attached at all the four edges of the square diaphragm. In order to improve the sensitivity of the sensor, the capacitive 1-spring is slightly modified into capacitive 4-springs attached at all four edges as shown in the Fig-3. The sensor is designed with a specifications listed in table-1. Fig-1: Layout of capacitive 1-spring Table -1: Design specifications for capacitive sensor Sl.NO Layers Materials Size [µm] Thickness [µm] 1 Top and Bottom Silicon plate 2 Top and Bottom Electrode Platinum Air block (Gap b/w two plates) Air Spring blocks Platinum The model has top plate and bottom plate with the length of µm with thickness of 525µm. Similarly the top and bottom electrode plates with the length of µm and thickness of 2µm followed by air block with the length of µm and thickness of 180µm. The springs with length of 80µm and thickness of 20µm is integrated in between top and bottom plates. Once the 3-D model is designed, the next step is to generate a mesh for the obtained 3-D model. The meshed model divides the structure Fig-3: Layout of capacitive 4-springs The designed layout is further build in order to get the 3-D structure of the sensor and finally mesh is generated which is shown in the Fig-4. Fig-4: Meshed model of capacitive 4- springs 2017, IRJET Impact Factor value: ISO 9001:2008 Certified Journal Page 2642

3 The uniform of 1pa is applied on the top plate whereas the bottom plate is fixed. The sensitivity of the devices can depends upon the materials used and the number of springs springs The capacitive 4-springs model is further modified into 9-springs structure. Here each corner of the square diaphragm is attached by 9-spring elements. Hence there are total 36-spring elements are integrated. The layout design of capacitive sensor is shown in Fig SIMULATION RESULTS AND DISCUSSIONS The different structures of capacitive sensor are designed and simulated using COVENTORWARE tool. Fig-8: Simulation result of MEMMECH (Displacement) for capacitive 1-spring Fig-5: Layout of capacitive 4-springs The layout of the sensor is build to obtaine a 3-D structure. Once the 3-D model is designed with POLYMUMPs process, the next work is to generate a mesh for the structure. The meshed model of the capacitive 9- springs is shown in Fig-6. The Fig-8 shows the simulation result of displacement for capacitive 1-spring attached. The maximum displacement of 1.456e-4µm is obtained for applied of 1pa. Fig-9: Simulation result of MEMELECTRO (capacitance) for capacitive 1-spring Fig-6: Meshed model of capacitive 9- springs The POLYMUMPs process flow can be constructed with sequence of stack materials foloowed by etching steps which is shown in Fig-7. The Fig-9 shows the simulation result of capacitance for capacitive 1-spring attached. The capacitance of 3.23e01pF is obtained for bias voltage of 5v. Fig-7: POLYMYMPs process flow Fig-10: Simulation result of MEMMECH (Displacement) for capacitive 4-springs 2017, IRJET Impact Factor value: ISO 9001:2008 Certified Journal Page 2643

4 The Fig-10 shows the simulation result of displacement for capacitive 4-springs attached. The maximum displacement of 4.909e-5µm is obtained for applied of 1pa. the distance between the two plates is more and capacitance is less. The sensitivity of the device can be defined as the rate of change of capacitance with respect to the change in applied. The table-2 gives the comparison of displacement, capacitance and sensitivity of all the proposed structures of capacitive sensor at applied of 1pa. Table -2: Comparison of different parameters for proposed structures of capacitive sensor Structure 1-spring Displacement Capacitance Sensitivity (µm) (pf) (pf) 1.456e e e01 Fig-11: Simulation result of MEMELECTRO (capacitance) for capacitive 4-springs The Fig-11 shows the simulation result of capacitance for capacitive 4-springs attached. The capacitance of 7.879e0pF is obtained for bias voltage of 5v. The sensitivity of the capacitive 4-springs can be increased by 4.649pF as compared to capacitive 1-spring. 4-springs 9-springs 4.909e e e e e e0 By comparing the above results, it can be clearly seen that the capacitance 9-springs has best sensitivity of 1.013e0pF at applied of 1Pa as compared to other two structures. 4. CONCLUSIONS Fig-12: Simulation result of MEMMECH (Displacement) for capacitive 9-springs The Fig-12 shows the simulation result of displacement for capacitive 9-springs attached. The maximum displacement of 3.288e-5µm is obtained for applied of 1pa. The MEMELECTRO or capacitance of 1.013e0pF is obtained for bias voltage of 5v. The capacitance in a parallel plate capacitor is given by, C = εₒ A / d (1) Where εₒ = permittivity of the medium. A= Area of the two plates. d = gap between the two plates. From equation (1) we can conclude that, as the distance between the two plates decreases the capacitance increases. That means, when the displacement of the structure is less, In this proposed paper, MEMS based capacitive sensor is designed, simulated and analysed for 1-spring, 4- spring and 9-springs capacitive sensor using COVENTORWARE TURBO tool. By observing the above simulation results and discussions we noticed that the 9- springs capacitive sensor model achieves a good and high sensitivity of 1.010e0pF/pa with displacement of 3.288e-5 µm at applied of 1pa as compared to 1- spring and 4-spring capacitive sensors. Thus 9- springs capacitive sensors are much preferred for high sensitivity applications. The sensitivity of the sensor device can be improved by decreasing the gap between two plates of the diaphragm and one can also look at the feasibility of fabricating the device. The capacitance sensitivity of the design increases as the number of springs increases. Hence the proposed capacitive sensors can be used in many health monitoring applications in the field of artificial intelligence systems and in wearable health care devices like blood sensors, Electro cardiogram sensor etc.in which the sensor can achieve very high sensitivity. ACKNOWLEDGEMENT The authors of this paper would like to thank the Centre for Nanomaterial s and MEMS, Nitte Meenakshi Institute of Technology, Bangalore for providing the facilities to conduct this work. 2017, IRJET Impact Factor value: ISO 9001:2008 Certified Journal Page 2644

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