Outlook and Challenges of Nano Devices, Sensors, and MEMS

Transcription

1 Outlook and Challenges of Nano Devices, Sensors, and MEMS

2 Ting Li Ziv Liu Editors Outlook and Challenges of Nano Devices, Sensors, and MEMS

3 Editors Ting Li State Key Lab of Electronic Thin Film & Integrated Device University of Electronic Science & Technology of Chengdu, Ziv Liu Microelectronics & Solid-state Electronics College University of Electronic Science & Technology of Chengdu, ISBN ISBN (ebook) DOI / Library of Congress Control Number: Springer International Publishing AG 2017 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer International Publishing AG The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland

4 Foreword This book mainly covers the current status, challenges, and future directions on design, fabrication, simulation, reliability, and applications of nanoscale semiconductor devices, MEMS, and sensors. And these novel devices are the backbone for realizing the next-generation Internet of things. This book provides readers important information related to the recent development on these nanoelectron apparatuses, which represents that this book will become an indispensable handbook for anyone in a relevant field. This book contains 17 chapters, and all the chapters can be divided into 4 parts: MOS, sensors (including photoelectric detection and gas detection), nanostructured oxide materials, and other nano devices. In spite of the large coverage of related fields, the focus of this book is explicitly placed on the interaction of nanoscale structure and electrical and/or optical behavior of novel semiconductor devices, MEMS, and sensors. Besides, it enables detailed understanding on the difficulties and challenges of realizing the nano devices moving forward. In this single book, the reader can access up-to-date and critical knowledge on the design, fabrication, simulation, and reliability of the increasingly important nanoscale electron apparatuses, including semiconductor devices, MEMS, and sensors. University of Electronic Science and Technology Chengdu, University of Electronic Science and Technology Chengdu, He Yu Lanhui Wu v

5 Preface This book contains 17 chapters, which is written by selected experts who have present high-quality papers on topics closely relevant to the theme of nano devices, sensors, and MEMS. We can understand current status, challenges, and future directions on design, fabrication, simulation, reliability, and applications of nanoscale semiconductor devices, MEMS, and sensors from this book. The field of nanoelectronic is evolving rapidly, and novel nanoscale devices are being investigated and developed at many leading research labs and companies worldwide. Nanoscale semiconductor devices, MEMS, and sensors are the backbone for realizing the next-generation Internet of things. The research of design, fabrication, reliability, modeling, simulation, and applications of these nanoscale electron components is becoming more and more important to achieve further technology breakthrough. Learning how the nanoscale structure interacts with the electrical and/or optical performances, how to find optimal solutions to achieve the best outcome, how these apparatuses can be designed via models and simulations, how to improve the reliability, and what are possible challenges and roadblocks moving forward is necessary to any relative researchers. This is a book that describes the dielectric and noise analysis of MOS devices, devices modeling and CMOS technology, and medical application in MEMS and sensors, as well as relative fabrication and optimizing technology. It is really a book which provides readers important information related to the recent development on these nanoelectron apparatuses and challenges of realizing the nano devices moving forward that shows processes and materials needed for fabrication and the interaction of nanoscale structure and electrical and/or optical behavior, as well as the performance optimization and reliability analysis by modeling and simulating. Springer is highly desirable and can offer engineers, research scientists, and students a much needed reference in this field. Last but not the least, we want to express our deep appreciation to the endless support from writers of this book. Also, we really hope that the readers can access vii

6 viii Preface up-to-date and critical knowledge on the design, fabrication, simulation, and reliability of the increasingly important nanoscale electron apparatuses from a single book. Know more about nowadays and think more about the future. Let Springer be a window through which we can discover and explore deeper in this field. Chengdu, Ting Li Ziv Liu

7 Acknowledgements Sincere thanks must be expressed to all authors who have devoted considerable time and effort to prepare excellent comprehensive works of high scientific quality and value. Without their help, it would be impossible to prepare this book in line with the high standards that we have set from the very beginning of this project. We would also like to thank our Springer editorial contacts. It would not have been possible to bring out this book within such a short span of time without her concerted encouragement. We very much appreciate the continued support extended by Springer. Lastly, I would like to express my thanks to Professor He Yu, student Haicheng Yao, and other students of the University of Electronic Science and Technology of, who assisted in this book. ix

8 Contents Part I MOS 1 High-k Dielectric for Nanoscale MOS Devices... 3 Ling-Xuan Qian 2 Challenge of High Performance Bandgap Reference Design in Nanoscale CMOS Technology Zhang Jun-an, Li Guangjun, Zhang Rui-tao, Yang Yu-jun, Li Xi, Yan Bo, Fu Dong-bing, and Luo Pu 3 Metal Oxide Semiconductor Thin-Film Transistors: Device Physics and Compact Modeling Wanling Deng, Jielin Fang, Xixiong Wei, and Fei Yu 4 AC Random Telegraph Noise (AC RTN) in Nanoscale MOS Devices Jibin Zou, Shaofeng Guo, Ru Huang, and Runsheng Wang 5 Passivation and Characterization in High-k/III V Interfaces Shengkai Wang and Honggang Liu 6 Low Trigger Voltage and High Turn-On Speed SCR for ESD Protection in Nanometer Technology Jizhi Liu, Zhiwei Liu, Fei Hou, Hui Cheng, Liu Zhao, and Rui Tian 7 Silicon-Based Junctionless MOSFETs: Device Physics, Performance Boosters and Variations Xinnan Lin, Haijun Lou, Ying Xiao, Wenbo Wan, Lining Zhang, and Mansun Chan xi

9 xii Contents Part II Sensor 8 Effect of Nanoscale Structure on Reliability of Nano Devices and Sensors Jaya Madan and Rishu Chaujar 9 MEMS/NEMS-Enabled Vibrational Energy Harvesting for Self-Powered and Wearable Electronics Kai Tao, Jin Wu, Ajay Giri Prakash Kottapalli, Sun Woh Lye, and Jianmin Miao 10 The Application of Graphene in Biosensors Ting Li, Zebin Li, Jinhao Zhou, Boan Pan, Xiao Xiao, Zhaojia Guo, Lanhui Wu, and Yuanfu Chen 11 Modelling and Optimization of Inertial Sensor-Accelerometer Zakriya Mohammed, Waqas Amin Gill, and Mahmoud Rasras 12 Graphene for Future High-Performance Gas Sensing Jin Wu, Kai Tao, Jianmin Miao, and Leslie K. Norford 13 Nanoporous Palladium Films Based Resistive Hydrogen Sensors Shuanghong Wu, Han Zhou, Mengmeng Hao, and Zhi Chen Part III Nanostructured Oxide 14 Microstructure of the Nanostructured Oxide Composite Thin Films and Its Functional Properties Xingkun Ning 15 Fabrication and Characterizations of Bi 2 Te 3 Based Topological Insulator Nanomaterials Z.H. Wang, Xuan P.A. Gao, and Z.D. Zhang Part IV Other Nanoscale Devices 16 Micro/Nanoscale Optical Devices for Hyperspectral Imaging System Li Li, Chengjun Huang, and Haiying Zhang 17 Fabrication and Physical Properties of Nanoscale Spin Devices Based on Organic Semiconductors Xianmin Zhang

10 Contributors Yan Bo School of Communication and Information Engineering, University of Mansun Chan Peking University Shenzhen Graduate School, Shenzhen, Rishu Chaujar Department of Engineering Physics, Delhi Technological University, (Formerly Delhi College of Engineering), Delhi, India Yuanfu Chen State Key Lab Elect Thin Film and Integrated Device, University of Zhi Chen School of Optoelectronic Information, University of Electronic Science and Technology of, Chengdu, Department of Electrical and Computer Engineering and Center for Nanoscale Science and Engineering, University of Kentucky, Lexington, KY, USA Hui Cheng State Key Laboratory for Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of, Chengdu, Wanling Deng College of Information Science and Technology, Jinan University, Guangzhou, Fu Dong-bing Sichuan Institute of Solid-State Circuits, Electronics Technology Group Corp, Chongqing, People s Republic of Jielin Fang College of Information Science and Technology, Jinan University, Guangzhou, Xuan P.A. Gao Department of Physics, Case Western Reserve University, Cleveland, OH, USA Waqas Amin Gill Department of Electrical and Computer Engineering, Masdar Institute of Science and Technology, Abu Dhabi, UAE xiii

11 xiv Contributors Li Guangjun School of Communication and Information Engineering, University of Shaofeng Guo Institute of Microelectronics, Peking University, Beijing, Zhaojia Guo State Key Lab Elect Thin Film and Integrated Device, University of Mengmeng Hao School of Optoelectronic Information, University of Electronic Science and Technology of, Chengdu, Fei Hou State Key Laboratory for Electronic Thin Films and Integrated Devices, University of Ru Huang Institute of Microelectronics, Peking University, Beijing, Chengjun Huang Institute of Microelectronics of Chinese Academy of Sciences, Beijing, Zhang Jun-an School of Communication and Information Engineering, University of Key Laboratory of Analog Integrated Circuit, Chongqing, Ajay Giri Prakash Kottapalli School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore, Singapore Ting Li State Key Lab Elect Thin Film and Integrated Device, University of Shenzhen Geno-Immune Medicine Institute, Shenzhen, Guangdong Province, Zebin Li State Key Lab Elect Thin Film and Integrated Device, University of Shenzhen Geno-Immune Medicine Institute, Shenzhen, Guangdong Province, Li Li Institute of Microelectronics of Chinese Academy of Sciences, Beijing, Xinnan Lin Peking University Shenzhen Graduate School, Shenzhen, Honggang Liu Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, Jizhi Liu State Key Laboratory for Electronic Thin Films and Integrated Devices, University of Zhiwei Liu State Key Laboratory for Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of, Chengdu,

12 Contributors xv Haijun Lou Peking University Shenzhen Graduate School, Shenzhen, Sun Woh Lye School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore, Singapore Jaya Madan Department of Engineering Physics, Delhi Technological University, (Formerly Delhi College of Engineering), Delhi, India Jianmin Miao School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore, Singapore Zakriya Mohammed Department of Electrical and Computer Engineering, Masdar Institute of Science and Technology, Abu Dhabi, UAE Xingkun Ning Hebei Key Lab of Optic-electronic Information and Materials, The College of Physics Science and Technology, Hebei University, Baoding, People s Republic of Leslie K. Norford Center for Environmental Sensing and Modeling (CENSAM), Singapore-MIT Alliance for Research and Technology (SMART) Centre, Singapore, Singapore Department of Architecture, Massachusetts Institute of Technology, Cambridge, MA, USA Boan Pan State Key Lab Elect Thin Film and Integrated Device, University of Luo Pu Sichuan Institute of Solid-State Circuits, Electronics Technology Group Corp, Chongqing, People s Republic of Ling-Xuan Qian School of Microelectronics and Solid-State Electronics, University of Mahmoud Rasras Department of Electrical and Computer Engineering, Masdar Institute of Science and Technology, Abu Dhabi, UAE Zhang Rui-tao Key Laboratory of Analog Integrated Circuit, Chongqing, Kai Tao School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore, Singapore Rui Tian State Key Laboratory for Electronic Thin Films and Integrated Devices, University of Wenbo Wan Peking University Shenzhen Graduate School, Shenzhen, Runsheng Wang Institute of Microelectronics, Peking University, Beijing, Z.H. Wang Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People s Republic of

13 xvi Contributors Shengkai Wang Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, Xixiong Wei College of Information Science and Technology, Jinan University, Guangzhou, Shuanghong Wu School of Optoelectronic Information, University of Electronic Science and Technology of, Chengdu, Jin Wu School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore, Singapore Lanhui Wu State Key Lab Elect Thin Film and Integrated Device, University of Li Xi Sichuan Institute of Solid-State Circuits, Electronics Technology Group Corp, Chongqing, People s Republic of Ying Xiao Peking University Shenzhen Graduate School, Shenzhen, Xiao Xiao State Key Lab Elect Thin Film and Integrated Device, University of Fei Yu College of Information Science and Technology, Jinan University, Guangzhou, Yang Yu-jun Sichuan Institute of Solid-State Circuits, Electronics Technology Group Corp, Chongqing, People s Republic of Lining Zhang Peking University Shenzhen Graduate School, Shenzhen, Z.D. Zhang Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People s Republic of Haiying Zhang Institute of Microelectronics of Chinese Academy of Sciences, Beijing, Xianmin Zhang Key Laboratory for Anisotropy and Texture of Materials from Ministry of Education, Northeastern University of, Shenyang, P. R. Liu Zhao State Key Laboratory for Electronic Thin Films and Integrated Devices, University of Jinhao Zhou State Key Lab Elect Thin Film and Integrated Device, University of Han Zhou School of Optoelectronic Information, University of Electronic Science and Technology of, Chengdu, Jibin Zou Institute of Microelectronics, Peking University, Beijing,