VCC 600V,VGE=12V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 340 W

Similar documents
TC=25 C, Tj=150 C Note *1

VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W

IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package

C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous

C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque

Tc=100 C 300 Tc=25 C 360 Collector current

IGBT MODULE (V series) 1200V / 75A / IGBT, RB-IGBT 12 in one package

Tc=25 C 1800 Tc=100 C 1400 Collector current

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V

Tc=25 C 1800 Tc=100 C 1400 Collector current

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400

IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package

2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 450

Viso AC : 1min VAC

Chapter 2. Technical Terms and Characteristics

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100

TO-3P(Q) Description Symbol Characteristics Unit Remarks. Ta=25 C W 315 Tc=25 C Operating and Storage Tch 150 C Temperature range Tstg -55 to C

Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100

Ic Continuous Tc=80 C 35 Icp 1ms Tc=80 C 70 -Ic 35 -Ic pulse 1ms 70 Collector power dissipation Pc 1 device 210 W

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70

Continuous. Ic pulse 1ms 900. C Case temperature TC 125 Storage temperature Tstg -40 to N m Terminals (*4) - 4.5

TO-3P(Q) Description Symbol Characteristics Unit Remarks. Tch 150 C Tstg -55 to C

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50

Icp 1ms TC=80 C 200 -IC 100. IC Continuous TC=80 C 50 ICP 1ms TC=80 C 100. Inverter, Brake 175 Converter 150 Operating junciton temperature

Icp 1ms TC=80 C 50 -IC 25. IC Continuous TC=80 C 25 ICP 1ms TC=80 C 50. Inverter, Brake 175 Converter 150 Operating junciton temperature

TO-220F(SLS) Description Symbol Characteristics Unit Remarks

6MBP50VDA IGBT MODULE (V series) 1200V / 50A / IPM. Features

Icp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature

6MBP20VAA IGBT MODULE (V series) 600V / 20A / IPM. Features

Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70

TO-247-P2. Description Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V. Description Symbol Conditions min. typ. max.

TO-3P. φ3.2± max 10 ± 0.2 3± ± ±0.2

7MBP75VDN IGBT MODULE (V series) 1200V / 75A / IPM. Features

TO-247. Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

TO-247. Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

4MBI400VF-120R-50. IGBT Power Module (V series) 1200V/400A/IGBT, ±600V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. (Unit : mm)

Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 80 V Isolating voltage Viso Terminals-to-case, AC.

Fuji IGBT Module V Series 1700V Family Technical Notes

TO-3P(Q) φ3.2± max 10 ± 0.2 3± ± ±0.2

TO-220F (SLS) Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15

TO ± ± ± ± 0.2. Description Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15

4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.

NGTB30N60L2WG. N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V

Drain (D) easy to use (more controllable switching dv/dt by Rg) The reliability trial conforms to AEC Q % avalanche tested Gate (G)

STGW40H120DF2, STGWA40H120DF2

NGTB20N60L2TF1G. N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode

7MBP50VFN IGBT Module (V series) 1200V / 50A / IPM. IGBT Modules

7MBP50VFN IGBT Module (V series) 600V / 50A / IPM. IGBT Modules

6MBP100VFN IGBT Module (V series) 600V / 100A / IPM. IGBT Modules

6MBP75VFN IGBT Module (V series) 600V / 75A / IPM. IGBT Modules

Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package. Features. Description. Table 1: Device summary

MBN1200F33F-C 3300V Silicon N-channel IGBT F version with SiC Diode

MBN1500FH45F Silicon N-channel IGBT 4500V F version

Fuji IGBT Module V Series 1200V Family Technical Notes

XI'AN IR-PERI Company

Features. Description. Table 1: Device summary. Order code Marking Package Packing STGW10M65DF2 G10M65DF2 TO-247 Tube

Value Parameter Symbol Conditions

MBN1000FH65G2 Silicon N-channel IGBT 6500V G2 version

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package. Features. Description

Item Symbol Unit MBN1800FH33F Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage VGES V 20 Collector Current

Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

Chapter 8. Parallel Connections

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed. Features. Ignition. Description

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package

STGFW40V60DF, STGW40V60DF, STGWT40V60DF

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description

GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics

Features. Description. Table 1: Device summary. Order code Marking Package Packing STGYA120M65DF2AG G120M65DF2AG Max247 long leads Tube

Sixth-Generation V-Series IGBT Module Application Note Chapter 1 Basic Concept and Features

STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD

Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package

Features. Description. NG4K3E2C1_no_d. Table 1: Device summary Order code Marking Package Packaging STGW80H65FB-4 G80H65FB TO247-4 Tube

MBL1200E17F Silicon N-channel IGBT 1700V F version

STGW80H65DFB, STGWT80H65DFB

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description G1C2TE3

FUJI IGBT Module EP2 Package Evaluation Board

FUJI IGBT Module EP3 Package Evaluation Board

MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit

RGW00TK65 650V 50A Field Stop Trench IGBT

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324

10 A, 600 V short-circuit rugged IGBT

IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode

STGFW40H65FB, STGW40H65FB, STGWA40H65FB, STGWT40H65FB

SG200-12CS2 200A1200V IGBT Module

Package. Absolute maximum ratings (Ta=25 ) Characteristic Symbol Ratings Unit

InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3. Datasheet. IndustrialPowerControl

Item Symbol Unit MBL1600E17F Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

Trench gate field-stop IGBT, HB series 650 V, 20 A high speed. Features. Description

STGW28IH125DF STGWT28IH125DF

Transcription:

FGWNHD (High-Speed V series) V / A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Equivalent circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=5 C unless otherwise specified) Items Symbols Characteristics Units Remarks Collector-Emitter Voltage VCES V Collector Gate-Emitter Voltage VGES ± V DC Collector Current IC@5 7 A TC=5 C,Tj=5 C IC@ A TC= C,Tj=5 C Pulsed Collector Current ICP A Note * Turn-Off Safe Operating Area - A VCE V,Tj 75 C Gate IF@5 5 A Diode Forward Current IF@ 3 A Diode Pulsed Current IFP A Note * Short Circuit Withstand Time tsc 5 µs VCC V,VGE=V Tj 5 C Emitter IGBT Max. Power Dissipation PD_IGBT 3 W TC=5 C FWD Max. Power Dissipation PD_FWD 9 TC=5 C Operating Junction Temperature Tj - ~ +75 C Storage Temperature Tstg -55 ~ +75 C Note * : Pulse width limited by Tjmax. Electrical characteristics (at Tj= 5 C unless otherwise specified) Items Symbols Conditions Characteristics min. typ. max. Units Collector-Emitter Breakdown Voltage V(BR)CES IC = 5μA, VGE = V - - V Zero Gate Voltage Collector Current ICES VCE = V, VGE = V Tj=5 C - - 5 µa Tj=75 C - - ma Gate-Emitter Leakage Current IGES VCE = V, VGE = ±V - - na Gate-Emitter Threshold Voltage VGE (th) VCE = +V, IC = ma. 5.. V Collector-Emitter Saturation Voltage VCE (sat) VGE = +5V, IC = A Tj=5 C -..3 Tj=75 C -.3 - V Input Capacitance Cies VCE=5V - 3 - Output Capacitance Coes VGE=V - 3 - pf Reverse Transfer Capacitance Cres f=mhz - - Gate Charge QG VCC = V IC = A - 3 - nc VGE = 5V Turn-On Delay Time td(on) Tj = 5 C - 35 - Rise Time tr VCC = V - - Turn-Off Delay Time td(off) IC = A - 35 - ns Fall Time tf VGE = 5V - - Turn-On Energy Eon RG = Ω -. - L = 5μH Turn-Off Energy Eoff Energy loss include tail and FWD reverse -. - mj recovery. Turn-On Delay Time td(on) Tj = 75 C - 35 - Rise Time tr VCC = V - - Turn-Off Delay Time td(off) IC = A - 35 - ns Fall Time tf VGE = 5V - 75 - Turn-On Energy Eon RG = Ω -. - L = 5μH Turn-Off Energy Eoff Energy loss include tail and FWD reverse - 3. - mj recovery.

FGWNHD FWD Characteristics Description Symbol Conditions Characteristics min. typ. max. Unit Forward Voltage Drop VF IF=3A Tj=5 C -.. V Tj=75 C -. - V VCC=3V,IF = 3.A Diode Reverse Recovery Time trr -di/dt=a/μs - 9 3 ns VCC=V Diode Reverse Recovery Time trr IF=3A. - μs Diode Reverse Recovery Charge Qrr -dif/dt=a/µs Tj=5 C -.35 - μc VCC=V Diode Reverse Recovery Time trr IF=3A -.7 - μs Diode Reverse Recovery Charge Qrr -dif/dt=a/µs Tj=75 C -. - μc Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Thermal Resistance, Junction-Ambient Rth(j-a) - - - 5 Thermal Resistance, IGBT Junction to Case Rth(j-c)_IGBT - - -.39 Thermal Resistance, FWD Junction to Case Rth(j-c)_FWD - - -.7 Units C/W

FGWNHD Characteristics (Representative) Graph. DC Collector Current vs TC VGE +5V, Tj 75ºC Graph. Collector Current vs. switching frequency VGE=+5V, TC 75ºC, VCC=V, D=.5, RG=Ω, TC=ºC Collector current IC [A] Tj 75 Switching frequency fs [khz] 5 5 75 5 5 75 Case Temperature [ C] 3 5 7 Collector-Emitter corrent : ICE [A] Graph.3 Typical Output Characteristics (VCE-IC) Tj=5ºC Graph. Typical Output Characteristics (VCE-IC) Tj=75ºC VGE=V 5V V V V VGE=V 5V V V IC [A] IC [A] V..5..5..5 3. 3.5. VCE [V]..5..5..5 3. 3.5. VCE [V] Graph.5 Typical Transfer Characteristics VGE=+5V Graph. Gate Threshold Voltage vs. Tj IC=mA, VCE=V 7 IC [A] Tj=75 Tj=5 Gate Threshold Voltage VGE(th) [V] 5 3 max. typ. min. VGE [V] -5-5 5 5 75 5 5 75 Tj [ ] 3

FGWNHD Graph.7 Typical Capacitance VGE=V,f=MHz,Tj=5 C Graph. Typical Gate Charge VCC=V,IC=A,Tj=5 C Cies 3 5 VCC=V Coes C [pf] Cres VGE [V] 5 - - VCE [V] B 5 5 5 3 35 QG [nc] Graph.9 Typical switching time vs. IC Tj=75 C,VCC=V,L=5µH VGE=5V,RG=Ω Graph. Typical switching time vs. RG Tj=75 C,VCC=V,IC=A,L=5µH VGE=5V td(off) td(off) Switching Times [nsec] tf td(on) tr Switching Times [nsec] tf td(on) tr 3 5 7 Collector Current IC [A] Graph. Typical switching losses vs. IC Tj=75 C,VCC=V,L=5µH VGE=5V,RG=Ω 3 5 Gate Resistor RG [Ω] Graph. Typical switching losses vs. RG Tj=75 C,VCC=V,IC=A,L=5µH VGE=5V Switching Energy Losses [mj] Eon Eoff Switching Energy Losses [mj] Eon Eoff Collector Current IC [A] 3 5 Gate Resistor RG [Ω]

FGWNHD Graph.3 FWD Forward voltage drop (VF-IF) Graph. Typical reverse recovery characteristics vs. IF Tj=75ºC, VCC=V, L=5µH VGE=5V, RG=Ω IF [A] 5 3 Tj=75 Tj=5 Reverse recovery Time [nsec] trr Qrr Reverse Recovery Charge [uc] 5..5..5..5 3. 3.5. VF [V] Graph.5 Typical reverse recovery loss vs. IF Tj=75ºC, VCC=V, L=5µH VGE=5V, RG=Ω 3 5 7 IF [A] Graph. Reverse biased Safe Operating Area Tj 75ºC, VGE=+5V/V, RG=Ω Reverse recovery loss [uj] 3 Collector current IC [A] 5 5 3 5 IF [A] Collector-Emitter voltage : VCE [V] 5

FGWNHD Graph.7 Transient thermal resistance of IGBT Zth(j-c) [ /W] - - -3 - -5 - -3 - - t [sec] Graph. Transient thermal resistance of FWD Zth(j-c) [ /W] - - -3 - -5 - -3 - - t [sec]

FGWNHD Outline Drawings, mm Outview : TO-7 Package 3 CONNECTION GATE COLLECTOR 3 EMITTER 3 DIMENSIONS ARE IN MILLIMETERS. 7

FGWNHD WARNING. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications.. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction.. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright 99- by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.