Diode RapidSwichingEmierConrolledDiode IDW40E65D2 EmierConrolledDiode Daashee IndusrialPowerConrol
EmierConrolledDiode RapidSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions 650VEmierConrolledechnology Fasrecovery Sofswiching Lowreverserecoverycharge Lowforwardvolageandsableoveremperaure 175 Cjuncionoperaingemperaure Easyparalleling Pbfreeleadplaing;RoHScomplian Applicaions: A C BoosdiodeinCCMPFC Packagepindefiniion: Pin1noconneced Pin2cahode Pin3anode 1 2 3 KeyPerformanceandPackageParameers Type Vrrm If Vf,Tvj=25 C Tvjmax Marking Package IDW40E65D2 650V 40A 1.6V 175 C E40ED2 PGTO2473 2 Rev.2.1,20131216
EmierConrolledDiode TableofConens Descripion........................................................................ 2 Table of Conens................................................................... 3 Maximum Raings................................................................... 4 Thermal Resisance................................................................. 4 Elecrical Characerisics.............................................................. 4 Elecrical Characerisics Diagrams..................................................... 6 Package Drawing................................................................... 8 Tesing Condiions.................................................................. 9 Revision Hisory................................................................... 10 Disclaimer........................................................................ 10 3 Rev.2.1,20131216
EmierConrolledDiode MaximumRaings Foropimumlifeimeandreliabiliy,Infineonrecommendsoperaingcondiionshadonoexceed80%ofhemaximumraingssaedinhisdaashee. Parameer Symbol Value Uni Repeiive peak reverse volage VRRM 650 V Diodeforwardcurren,limiedbyTvjmax TC=25 C TC=100 C IF 80.0 40.0 Diodepulsedcurren,plimiedbyTvjmax IFpuls 120.0 A Diode surge non repeiive forward curren TC=25 C,p=8.3ms,sinehalfwave IFSM 250.0 PowerdissipaionTC=25 C Po 180.0 W Operaing juncion emperaure Tvj 40...+175 C Sorage emperaure Tsg 55...+150 C Soldering emperaure, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 Mouning orque, M3 screw Maximum of mouning processes: 3 A A C M 0.6 Nm ThermalResisance Parameer Symbol Condiions Max.Value Uni Characerisic Diode hermal resisance, 1) juncion case Thermal resisance juncion ambien Rh(jc) 0.84 K/W Rh(ja) 40 K/W ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Diode forward volage Reverse leakage curren VF IR IF=40.0A Tvj=25 C Tvj=175 C VR=650V Tvj=25 C Tvj=175 C 1.60 1.65 2.30 40.0 4000.0 V µa ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic Inernal emier inducance measured 5mm (0.197 in.) from case LE 13.0 nh 1) Please be aware ha in non sandard load condiions, due o high Rh(jc), Tvj close o Tvjmax can be reached. 4 Rev.2.1,20131216
EmierConrolledDiode SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=25 C Diode reverse recovery ime rr Tvj=25 C, 36 ns Diode reverse recovery charge VR=400V, Qrr 0.40 µc IF=40.0A, Diode peak reverse recovery curren Irrm dif/d=1000a/µs 22.0 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 10000 A/µs Diode reverse recovery ime rr Tvj=25 C, 75 ns Diode reverse recovery charge VR=400V, Qrr 0.13 µc IF=40.0A, Diode peak reverse recovery curren Irrm dif/d=200a/µs 2.9 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 54 A/µs SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=175 C/125 C Diode reverse recovery ime rr Tvj=175 C, 60 ns Diode reverse recovery charge VR=400V, Qrr 1.14 µc IF=40.0A, Diode peak reverse recovery curren Irrm dif/d=1000a/µs 32.0 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 8700 A/µs Diode reverse recovery ime rr Tvj=125 C, 83 ns Diode reverse recovery charge VR=400V, Qrr 0.32 µc IF=40.0A, Diode peak reverse recovery curren Irrm dif/d=200a/µs 5.6 A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 51 A/µs 5 Rev.2.1,20131216
EmierConrolledDiode 180 1 Po,POWERDISSIPATION[W] 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[ C] Figure 1. Powerdissipaionasafuncionofcase emperaure (Tvj 175 C) Zh(jc),TRANSIENTTHERMALRESISTANCE[K/W] 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: 1 2 3 4 5 6 ri[k/w]: 0.015899 0.19942 0.23881 0.34593 0.036218 2.8E3 τi[s]: 1.4E5 2.4E4 1.8E3 7.8E3 0.1290993 2.085894 0.01 1E6 1E5 1E4 0.001 0.01 0.1 p,pulsewidth[s] Figure 2. Dioderansienhermalimpedanceasa funcionofpulsewidh (D=p/T) 120 110 Tj=25 C, IF = 40A Tj=175 C, IF = 40A 1.4 Tj=25 C, IF = 40A Tj=175 C, IF = 40A rr,reverserecoverytime[ns] 100 90 80 70 60 50 40 30 20 Qrr,REVERSERECOVERYCHARGE[µC] 1.2 1.0 0.8 0.6 0.4 0.2 10 0 0 250 500 750 1000 1250 1500 1750 2000 dif/d,diodecurrentslope[a/µs] Figure 3. Typicalreverserecoveryimeasafuncionof diodecurrenslope (VR=400V) 6 0.0 0 250 500 750 1000 1250 1500 1750 2000 dif/d,diodecurrentslope[a/µs] Figure 4. Typicalreverserecoverychargeasafuncion ofdiodecurrenslope (VR=400V) Rev.2.1,20131216
EmierConrolledDiode 50 45 Tj=25 C, IF = 40A Tj=175 C, IF = 40A 0 2000 Tj=25 C, IF = 40A Tj=175 C, IF = 40A Irrm,REVERSERECOVERYCURRENT[A] 40 35 30 25 20 15 10 5 dirr/d,diodepeakraeoffallofirr[a/µs] 4000 6000 8000 10000 12000 14000 0 0 250 500 750 1000 1250 1500 1750 2000 dif/d,diodecurrentslope[a/µs] Figure 5. Typicalpeakreverserecoverycurrenasa funcionofdiodecurrenslope (VR=400V) 16000 0 250 500 750 1000 1250 1500 1750 2000 dif/d,diodecurrentslope[a/µs] Figure 6. Typicaldiodepeakraeoffallofreverse recoverycurrenasafuncionofdiode currenslope (VR=400V) 120 110 100 Tj=25 C Tj=175 C 2.50 2.25 IF=20A IF=40A IF=80A IF,FORWARDCURRENT[A] 90 80 70 60 50 40 30 VF,FORWARDVOLTAGE[V] 2.00 1.75 1.50 1.25 1.00 20 10 0.75 0 0.0 0.5 1.0 1.5 2.0 2.5 VF,FORWARDVOLTAGE[V] Figure 7. Typicaldiodeforwardcurrenasafuncionof forwardvolage 0.50 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[ C] Figure 8. Typicaldiodeforwardvolageasafuncionof juncionemperaure 7 Rev.2.1,20131216
IDW40E65D2 Emier Conrolled Diode PGTO2473 8 Rev. 2.1, 20131216
IDW40E65D2 Emier Conrolled Diode vge() 90% VGE a a 10% VGE b b ic() 90% IC 90% IC 10% IC 10% IC vce() d(off) f d(on) r vge() 90% VGE 10% VGE ic() CC 2% IC vce() 2 E = off V CE 4 x IC x d E 1 1 on = V CE x IC x d 2% VCE 3 2 3 4 9 Rev. 2.1, 20131216
IDW40E65D2 Emier Conrolled Diode Revision Hisory IDW40E65D2 Revision: 20131216, Rev. 2.1 Previous Revision Revision Dae Subjecs (major changes since las revision) 1.1 20130314 Preliminary daa shee 1.2 20130522 IFSM 2.1 20131216 Final DS / New Marking Paern 2.2 20131216 Value VFmax limi according BE es We Lisen o Your Commens Any informaion wihin his documen ha you feel is wrong, unclear or missing a all? Your feedback will help us o coninuously improve he qualiy of his documen. Please send your proposal (including a reference o his documen) o: erraum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany 2014 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office (www.infineon.com). Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. The Infineon Technologies componen described in his Daa Shee may be used in lifesuppor devices or sysems and/or auomoive, aviaion and aerospace applicaions or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor, auomoive, aviaion and aerospace device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 10 Rev. 2.1, 20131216