7MBRVKC IGBT MODULE (V series) V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc= C unless otherwise specified) Items Symbols Conditions Maximum ratings Units CollectorEmitter voltage VCES V GateEmitter voltage VGES ± V Ic Continuous TC= C Collector current Icp ms TC=8 C Ic A Ic pulse ms Collector power dissipation PC device W CollectorEmitter voltage VCES V GateEmitter voltage VGES ± V Collector current IC Continuous TC=8 C ICP ms TC=8 C A Collector power dissipation PC device W Repetitive peak reverse voltage (Diode) VRRM V Repetitive peak reverse voltage VRRM 6 V Average output current IO Hz/6Hz, sine wave A Surge current (NonRepetitive) IFSM ms, Tj= C A I t (NonRepetitive) I t half sine wave 3 A s Junction temperature Tj Inverter, Brake 7 Converter Operating junci temperature (under switching conditions) Tjop Inverter, Brake C Case temperature TC Storage temperature Tstg to + between terminal and copper base (*) Isolation voltage Viso between thermistor and others (*) AC : min. VAC Screw torque Mounting (*3) M.7 Nm Inverter Brake Converter Note *: All terminals should be connected together during the test. Note *: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value :.3.7 Nm (M) 9 FEBRUARY 3
7MBRVKC Elecical characteristics (at Tj= C unless otherwise specified) Items Symbols Conditions Inverter Characteristics min. typ. max. Zero gate voltage collector current ICES VGE = V, VCE = V. ma GateEmitter leakage current IGES VGE = V, VGE = ±V na GateEmitter threshold voltage VGE (th) VCE = V, IC = ma 6. 6. 7. V CollectorEmitter saturation voltage VCE (sat) (terminal) VCE (sat) (chip) VGE = V IC = A VGE = V IC = A Tj= C.9. Tj= C.3 Tj= C.3 Tj= C.8. Tj= C. Tj= C. Internal gate resistance Rg(int) Ω Input capacitance Cies VCE = V, VGE = V, f = MHz.8 nf Turnon time Turnoff time Forward on voltage.8. (i) VCC = 6V IC = A VGE = + / V RG = 7Ω...9.6. tf.6.3 VF (terminal) VF (chip) IF = A IF = A Tj= C.7. Tj= C.8 Tj= C.8 Tj= C.6. Tj= C.7 Tj= C.7 Reverse recovery time r IF = A.3 μs Zero gate voltage collector current ICES VGE = V VCE = V Units V μs. ma V Brake Converter Thermistor GateEmitter leakage current CollectorEmitter saturation voltage IGES VCE (sat) (terminal) VCE (sat) (chip) VCE = V VGE = + / V VGE = V IC = A VGE = V IC = A na Tj= C.9. Tj= C.3 Tj= C.3 Tj= C.8. Tj= C. Tj= C. Internal gate resistance Rg(int) Ω Turnon time Turnoff time tf VCE = 6V IC = A VGE = + / V RG = 7Ω.8..9.6..6..3 Reverse current IRRM VR = V. ma Forward on voltage VFM IF = A terminal.. chip.9 Reverse current IRRM VR = 6V. ma Resistance R T = C T = C 6 9 B value B T = / C 33 337 3 K V μs V Ω Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Inverter IGBT. Thermal resistance (device) Rth(jc) Inverter FWD.6 Brake IGBT. Converter Diode.3 Contact thermal resistance (device) (*) Rth(cf) with Thermal Compound. Units C/W Note *: This is the value which is defined mounting on the additional cooling fin with thermal compound.
7MBRVKC Characteristics (Representative) Collector current vs. CollectorEmitter voltage (typ.) Tj= o C / chip Collector current vs. CollectorEmitter voltage (typ.) Tj= o C / chip V GE =V V V V GE =V V V V V 8V 8V 3 3 CollectorEmitter voltage: V CE [V] CollectorEmitter voltage: V CE [V] Collector current vs. CollectorEmitter voltage (typ.) V GE =V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj= o C / chip 8 Tj= o C Tj= o C Tj= o C Collector Emitter voltage: V CE [V] 6 Ic=A Ic=A Ic=A 3 CollectorEmitter voltage: V CE [V] Gate Emitter voltage: V GE [V] Capacitance vs. CollectorEmitter voltage (typ.) V GE =V, f= MHz, Tj= o C Dynamic gate charge (typ.) Vcc=6V, Ic=A,Tj= C Capacitance: Cies, Coes, Cres [nf].... Cies Cres Coes 3 Collector Emitter voltage: V CE [V/div] Gate Emitter voltage: VGE [V/div] V CE V GE Collector Emitter voltage: V CE [V] Gate charge: Qg [nc] 3
7MBRVKC Switching time :,,, tf [ nsec ] Switching time vs. Collector current (typ.) Vcc=6V,VGE=±V,Rg=7Ω,Tj= C tf Switching time :,,, tf [ nsec ] Switching time vs. Collector current (typ.) Vcc=6V,VGE=±V,Rg=7Ω,Tj= C tf Switching time :,,, tf [ nsec ] Switching time vs. gate resistance (typ.) Vcc=6V,Ic=A,VGE=±V,Tj= C tf Switching loss : Eon, Eoff, Err [mj/pulse ] 3 Switching loss vs. Collector current (typ.) Vcc=6V,VGE=±V,Rg=7Ω Eon( o C) Eon( o C) Eoff( o C) Eoff( o C) Err( o C) Err( o C) Gate resistance : Rg [Ω] Switching loss : Eon, Eoff, Err [mj/pulse ] 3 Switching loss vs. gate resistance (typ.) Vcc=6V,Ic=A,VGE=±V Gate resistance : Rg [Ω] Eon( o C) Eon( o C) Eoff( o C) Eoff( o C) Err( o C) Err( o C) Collector current: IC [A] 3 Reverse bias safe operating area (max.) +VGE=V,VGE <= V, Rg >= 7Ω,Tj = C RBSOA (Repetitive pulse) 8 CollectorEmitter voltage : V CE [V] (Main terminals)
7MBRVKC Forward current vs. forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=6V,VGE=±V,Rg=7Ω Forward current : IF [A] Tj= o C Tj= o C Tj= o C Reverse recovery current : Irr [ A ] Reverse recovery time : r [ nsec ] r( o C) r( o C) Irr( o C) Irr( o C) 3 Forward on voltage : V F [V] Forward current : I F [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip Forward current : IF [A] Tj= o C Tj= o C..... Forward on voltage : V FM [V] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(jc) [ C/W ]... Zth = n τ n r n [ºC/W] n= r e n [sec] IGBT FWD BIGBT Conv t τ n..99.39.99.8697...678..39..... Pulse width : Pw [sec] FWD[Inverter] IGBT[Inverter, Brake] 3.33.39.666.39.9793 Conv. Diode.7.39.377.39.8 Resistance : R [kω]. 6 6 8 6 8 Temperature [ C ]
7MBRVKC Collector current vs. CollectorEmitter voltage (typ.) Tj= o C / chip Collector current vs. CollectorEmitter voltage (typ.) Tj= o C / chip V GE =V V V V GE =V V V V V 8V 3 3 8V CollectorEmitter voltage: V CE [V] CollectorEmitter voltage: V CE [V] Capacitance: Cies, Coes, Cres [nf] Collector current vs. CollectorEmitter voltage (typ.) V GE =V / chip... Tj= o C 3 CollectorEmitter voltage: V CE [V] Capacitance vs. CollectorEmitter voltage (typ.) V GE =V, f= MHz, Tj= o C Cies Cres Coes Tj= o C Tj= o C. 3 Collector Emitter voltage: V CE [V] Collector Emitter voltage: V CE [V] CollectorEmitter voltage vs. GateEmitter voltage (typ.) 8 6 Collector Emitter voltage: V CE [V/div] Gate Emitter voltage: VGE [V/div] Tj= o C / chip Gate Emitter voltage: V GE [V] Dynamic gate charge (typ.) Vcc=6V, Ic=A,Tj= C V CE Gate charge: Qg [nc] Ic=A Ic=A Ic=A V GE 6
7MBRVKC Outline Drawings, mm Weight: g(typ.) Equivalent Circuit Schematic [Converter] [Brake] [Inverter] 7
7MBRVKC WARNING. This Catalog contains the product specifications, characteristics, data, materials, and suctures as of February 3. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications.. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, ade secret or other intellectual property right owned by Fuji Elecic Co., Ltd. is (or shall be deemed) granted. Fuji Elecic Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Elecic Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Elecic semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction.. The products inoduced in this Catalog are intended for use in the following eleconic and elecical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Elecical home appliances Personal equipment Indusial robots etc.. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Elecic Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Trafficsignal conol equipment Gas leakage detectors with an autoshu feature Emergency equipment for responding to disasters and antiburglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring sict reliability such as the following and equivalents to sategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear conol equipment Submarine repeater equipment 7. Copyright 9963 by Fuji Elecic Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Elecic Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Elecic Co., Ltd. or its sales agents before using the product. Neither Fuji Elecic Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with insuctions set forth herein. 8