N-channel Enhancement-mode Power MOSFET Simple rive Requirement Low Gate Charge Surface Mount evice R S(ON) 2mΩ RoHS-compliant, halogen-free G S I.7A BV SS 3V escription Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. SOT-23 G S Absolute Maximum Ratings V S V GS I I M A P at T A =25 C Total Power issipation 1.3 W T STG J Symbol Parameter Rating Units rain-source Voltage 3 V Gate-Source Voltage + 2 V I at T =25 C Continuous rain Current 3.7 A A at T = 7 C Continuous rain Current 3 3.7 A Pulsed rain Current 1 2 A Storage Temperature Range -55 to 15 C T Operating Junction Temperature Range -55 to 15 C Thermal ata Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 9 C/W Ordering Information TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3pcs/ reel 21 Advanced Power USA 29161-3 1/5
Electrical Specifications at T j =25 C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV SS rain-source Breakdown Voltage V GS =V, I =25uA 3 - - V R S(ON) Static rain-source On-Resistance 2 V GS =1V, I =A - - 2 mω V GS =.5V, I =3A - - 6 mω V GS(th) Gate Threshold Voltage V S =V GS, I =25uA 1-3 V g fs Forward Transconductance V S =1V, I =3A - 9 - S I SS rain-source Leakage Current V S =3V, V GS =V - - 1 ua I GSS Gate-Source Leakage V GS =±2V, V S =V - - ±1 na Q g Total Gate Charge 2 I =3A -.3 6.9 nc Q gs Gate-Source Charge V S =15V - 1.1 - nc Q gd Gate-rain ("Miller") Charge V GS =.5V - 2. - nc t d(on) Turn-on elay Time 2 V S =15V - 5.5 - ns t r Rise Time I =1A - 7.5 - ns t d(off) Turn-off elay Time R G =3.3Ω,VGS=1V - 12 - ns t f Fall Time R =15Ω - 2.5 - ns C iss Input Capacitance V GS =V - 25 pf C oss Output Capacitance V S =25V - 55 - pf C rss Reverse Transfer Capacitance f=1.mhz - 5 - pf R g Gate Resistance f=1.mhz - 1. - Ω Source-rain iode Symbol Parameter Test Conditions Min. Typ. Max. Units V S Forward On Voltage 2 I S =1.2A, V GS =V - - 1.2 V trr Reverse Recovery Time 2 I S =3A, V GS =V, - 1 - ns Qrr Reverse Recovery Charge di/dt=1a/µs - 7 - nc Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 3µs, duty cycle < 2% 3. Surface mounted on 1in 2 copper pad of FR board, t <1sec; 27 C/W when mounted on minimum copper pad. THIS PROUCT IS SENSITIVE TO ELECTROSTATIC ISCHARGE, PLEASE HANLE WITH CAUTION. USE OF THIS PROUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZE. APEC OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. 21 Advanced Power USA 2/5
Typical Electrical Characteristics I, rain Current (A) 2 16 12 1V 7.V 6.V 5.V V G =.V I, rain Current (A) 2 16 12 T A =15 o C 1V 7.V 6.V 5.V V G =.V. 1. 2. 3.. 5.. 1. 2. 3.. 5. Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 6 I =3A 2. I =A V G =1V 1.6 R S(ON) (mω) 5 Normalized R S(ON) 1.2. 3. 2 6 1-5 5 1 15 V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Fig. Normalized On-Resistance Gate Voltage vs. Junction Temperature. 2. 3. 1.5 I S (A) 2. 1. T j =15 o C T j =25 o C Normalized V GS(th) (V) 1..5..2..6. 1 1.2 V S, Source-to-rain Voltage (V). -5 5 1 15 T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse iode Fig 6. Gate Threshold Voltage vs. Junction Temperature 21 Advanced Power USA 3/5
Typical Electrical Characteristics (cont.) 1 I =3A f=1.mhz V GS, Gate to Source Voltage (V) 6 2 V S =15V C (pf) 3 2 1 C iss C oss C rss 2 6 Q G, Total Gate Charge (nc) 1 5 9 13 17 21 25 29 Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics 1 1 I (A) 1 1.1 Operation in this area limited by R S(ON) Single Pulse 1us 1ms 1ms 1ms 1s C Normalized Thermal Response (R thja ).1 uty factor=.5.2.1.5.2.1 Single Pulse P M t T uty factor = t/t Peak T j = P M x R thja + T a R thja = 27 C/W.1.1.1.1 1 1 1.1.1.1.1 1 1 1 t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 1. Effective Transient Thermal Impedance V S 9% V G.5V Q G Q GS Q G 1% V GS t d(on) t r t d(off) t f Charge Q Fig 11. Switching Time Circuit Fig 12. Gate Charge Waveform 21 Advanced Power USA /5
Package imensions: SOT-23 1 SYMBOLS Millimeters MIN NOM MAX A. -- 1.3 A1. --.1 E1 E A2. --.25 1.3..5 e 1.7 2. 2.3 2.7 2.9 3.1 E 2.2 2.6 3. e E1 1.2 1.5 1. M -- 1 L.3 --.6 A A2 M L A1 M 1. All dimensions are in millimeters. 2. imensions do not include mold protrusions. Marking Information: SOT-23 Product: NY = NYXX ate/lot code For details of how to convert this to standard YYWW date code format, please contact us directly. 21 Advanced Power USA 5/5