Diode FasSwichingEmierConrolledDiode IDW5E6 EmierConrolledDiodeseries Daashee IndusrialPowerConrol
IDW5E6 EmierConrolledDiodeseries FasSwichingEmierConrolledDiode Feaures: QualifiedaccordingoJEDECforargeapplicaions 6VEmierConrolledechnology Fasrecovery Sofswiching Lowreverserecoverycharge Lowforwardvolage 175 Cjuncionoperaingemperaure Easyparalleling Pbfreeleadplaing;RoHScomplian Applicaions: A C SwichingdiodeforPFCapplicaionswihoperaingrangeupo 3kHz Packagepindefiniion: Pin1noconneced Pin2cahode Pin3anode 1 2 3 KeyPerformanceandPackageParameers Type Vrrm If Vf,Tvj=25 C Tvjmax Marking Package IDW5E6 6V 5A 1.65V 175 C D5E6 PGTO2473 2 Rev.2.2,214224
IDW5E6 EmierConrolledDiodeseries TableofConens Descripion........................................................................ 2 Table of Conens................................................................... 3 Maximum raings.................................................................... 4 Thermal Resisance................................................................. 4 Elecrical Characerisics.............................................................. 4 Elecrical Characerisics diagrams...................................................... 6 Package Drawing................................................................... 9 Tesing Condiions................................................................. 1 Revision Hisory................................................................... 11 Disclaimer........................................................................ 11 3 Rev.2.2,214224
IDW5E6 EmierConrolledDiodeseries Maximumraings Parameer Symbol Value Uni Repeiive peak reverse volage VRRM 6 V Diodeforwardcurren,limiedbyTvjmax TC=25 C TC=1 C IF 8. 5. Diodepulsedcurren,plimiedbyTvjmax IFpuls 15. A Diode surge non repeiive forward curren TC=25 C,p=1.ms,sinehalfwave IFSM 24. PowerdissipaionTC=25 C Po 187. W Operaing juncion emperaure Tvj 4...+175 C Sorage emperaure Tsg 55...+15 C Soldering emperaure, wave soldering 1.6 mm (.63 in.) from case for 1s 26 Mouning orque, M3 screw Maximum of mouning processes: 3 A A C M.6 Nm ThermalResisance Parameer Symbol Condiions Max.Value Uni Characerisic Diode hermal resisance, juncion case Thermal resisance juncion ambien Rh(jc).8 K/W Rh(ja) 4 K/W ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Diode forward volage Reverse leakage curren VF IR IF=5.A Tvj=25 C Tvj=175 C VR=6V Tvj=25 C Tvj=175 C 1.65 1.6 2. 4. 165. V µa ElecricalCharacerisic,aTvj=25 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. 4 Rev.2.2,214224
IDW5E6 EmierConrolledDiodeseries DiodeCharacerisic,aTvj=25 C Diode reverse recovery ime rr Tvj=25 C, 115 ns Diode reverse recovery charge VR=4V, Qrr 1.5 µc IF=5.A, Diode peak reverse recovery curren Irrm dif/d=12a/µs 3. A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 47 A/µs SwichingCharacerisic,InduciveLoad Value Parameer Symbol Condiions Uni min. yp. max. DiodeCharacerisic,aTvj=175 C Diode reverse recovery ime rr Tvj=175 C, 192 ns Diode reverse recovery charge VR=4V, Qrr 4.1 µc IF=5.A, Diode peak reverse recovery curren Irrm dif/d=12a/µs 52. A Diode peak rae of fall of reverse recoverycurrenduringb dirr/d 65 A/µs 5 Rev.2.2,214224
IDW5E6 EmierConrolledDiodeseries 2 9 18 8 16 7 Po,POWERDISSIPATION[W] 14 12 1 8 6 4 IF,FORWARDCURRENT[A] 6 5 4 3 2 2 1 25 5 75 1 125 15 175 TC,CASETEMPERATURE[ C] Figure 1. Powerdissipaionasafuncionofcase emperaure (Tj 175 C) 25 5 75 1 125 15 175 TC,CASETEMPERATURE[ C] Figure 2. Diodeforwardcurrenasafuncionofcase emperaure (Tj 175 C) ZhJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1.1.1 D=.5.2.1.5.2.1 single pulse i: 1 2 3 4 5 ri[k/w]:.722841.119218.14117.2213981.2642944 τi[s]: 9.4E6 1.3E4 1.5E3.2221235.36412.1 1E7 1E6 1E5 1E4.1.1.1 1 p,pulsewidth[s] Figure 3. Dioderansienhermalimpedanceasa funcionofpulsewidh (D=p/T) rr,reverserecoverytime[ns] 6 4 35 3 25 2 15 1 5 Tj=25 C, IF = 5A Tj=1 C, IF = 5A Tj=175 C, IF = 5A 2 4 6 8 1 12 14 16 dif/d,diodecurrentslope[a/µs] Figure 4. Typicalreverserecoveryimeasafuncionof diodecurrenslope (VR=4V,IF=5A,Dynamicescircuiin Figure E) Rev.2.2,214224
IDW5E6 Emier Conrolled Diode series 5. Tj=25 C, IF = 5A Tj=1 C, IF = 5A Tj=175 C, IF = 5A Irr, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc] 4.5 6 Tj=25 C, IF = 5A Tj=1 C, IF = 5A Tj=175 C, IF = 5A 4. 3.5 3. 2.5 2. 1.5 1. 5 4 3 2 1.5. 2 4 6 8 1 12 14 2 16 dif/d, DIODE CURRENT SLOPE [A/µs] 4 6 8 1 12 14 16 dif/d, DIODE CURRENT SLOPE [A/µs] Figure 5. Typical reverse recovery charge as a funcion Figure 6. Typical reverse recovery curren as a of diode curren slope funcion of diode curren slope (VR=4V, IF=5A, Dynamic es circui in (VR=4V, IF=5A, Dynamic es circui in Figure E) Figure E) 2 Tj=25 C, IF = 5A Tj=1 C, IF = 5A Tj=175 C, IF = 5A 16 2 IF, FORWARD CURRENT [A] dirr/d, diode peak rae of fall of Irr [A/µs] 1 3 4 5 6 7 14 12 1 8 6 4 8 9 2 Tj=25 C Tj=175 C 18 2 4 6 8 1 12 14 16 dif/d, DIODE CURRENT SLOPE [A/µs] Figure 7. Typical diode peak rae of fall of reverse recovery curren as a funcion of diode curren slope (VR=4V, IF=5A, Dynamic es circui in Figure E)..5 1. 1.5 2. 2.5 3. VF, FORWARD VOLTAGE [V] Figure 8. Typical diode forward curren as a funcion of forward volage 7 Rev. 2.2, 214224
IDW5E6 Emier Conrolled Diode series 2.5 VF, FORWARD VOLTAGE [V] 2. 1.5 1. IF=1A IF=25A IF=5A IF=1A.5. 25 5 75 1 125 15 175 Tj, JUNCTION TEMPERATURE [ C] Figure 9. Typical diode forward volage as a funcion of juncion emperaure 8 Rev. 2.2, 214224
IDW5E6 Emier Conrolled Diode series PGTO2473 9 Rev. 2.2, 214224
IDW5E6 Emier Conrolled Diode series vge() 9% VGE a a b b ic() 9% IC 9% IC 1% IC 1% IC vce() d(off) f d(on) r vge() 9% VGE 1% VGE ic() 2% IC vce() 2% VCE 1 2 3 4 1 Rev. 2.2, 214224
IDW5E6 Emier Conrolled Diode series Revision Hisory IDW5E6 Revision: 214224, Rev. 2.2 Previous Revision Revision Dae Subjecs (major changes since las revision) 1.1 211127 Preliminary daa shee 1.2 212223 Prelim daa shee swich MOS C6 5A 2.1 213129 New value IRmax limi a 175 C 2.2 214224 New value IRmax limi a 175 C We Lisen o Your Commens Any informaion wihin his documen ha you feel is wrong, unclear or missing a all? Your feedback will help us o coninuously improve he qualiy of his documen. Please send your proposal (including a reference o his documen) o: erraum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany 214 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office (www.infineon.com). Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. The Infineon Technologies componen described in his Daa Shee may be used in lifesuppor devices or sysems and/or auomoive, aviaion and aerospace applicaions or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor, auomoive, aviaion and aerospace device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 11 Rev. 2.2, 214224