N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S 2 D -..8 -. +..97 -. +.. Gate 2. Source. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=V Pulsed Drain Current Power Dissipation Linear Derating Factor Junction Temperature Storage Temperature Range VDS VGS ±6 TA=25.6 ID TA=7. IDM 7 TA=25. PD TA=7.8 Thermal Resistance.Junction- to-ambient (Note.) RthJA V A W /W 99. W/ TJ 5 Tstg -55 to 5 Note.: Surface mounted on in square Cu board
Electrical Characteristics Ta = 25 N-Channel IRLML (KRLML) Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=25μA, VGS=V V Zero Gate Voltage Drain Current IDSS VDS=V, VGS=V 2 VDS=V, VGS=V, TJ=25 25 μa Gate-Body Leakage Current IGSS VDS=V, VGS=±6V ± na Gate Threshold Voltage VGS(th) VDS=VGS, ID=25μA 2.5 V Static Drain-Source On-Resistance (Note.) RDS(On) VGS=4.5V, ID=.A 9 25 mω VGS=V, ID=.6A 78 22 Forward Transconductance gfs VDS=5V, ID=.6A 5.7 S Input Capacitance Ciss 29 Output Capacitance Coss VGS=V, VDS=25V, f=mhz 27 pf Reverse Transfer Capacitance Crss Gate Resistance Rg. Ω Total Gate Charge Qg 2.5 Gate Source Charge Qgs VGS=4.5V, VDS=5V, ID=.6A nc Gate Drain Charge Qgd.2 Turn-On DelayTime td(on) 2.2 Turn-On Rise Time tr 2. VGS=4.5V, VDS=5V, ID=A,RGEN=6.8Ω Turn-Off DelayTime td(off) 9 ns Turn-Off Fall Time tf.6 Body Diode Reverse Recovery Time trr VR=5V,IF=.A, di/dt= A/μs, 2 Body Diode Reverse Recovery Charge Qrr TJ = 25 (Note.) 2 nc Maximum Body-Diode Continuous Current IS. A Pulsed Source Current ISM (Note.2) 7 Diode Forward Voltage VSD IS=.A,VGS=V,TJ = 25 (Note.). V Note.: Pulse width 4μs; duty cycle 2%. Note.2:Repetitive rating; pulse width limited by max. junction temperature. Marking Marking K** 2
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current(A) R DS(on), Drain-to-Source On Resistance (Normalized) 6µs PULSE WIDTH Tj = 25 C N-Channel IRLML (KRLML) VGS TOP.V 4.5V.5V.V.25V 2.5V 2.5V BOTTOM 2.25V 6µs PULSE WIDTH Tj = 5 C VGS TOP.V 4.5V.5V.V.25V 2.5V 2.5V BOTTOM 2.25V. 2.25V 2.25V.. Fig. Typical Output Characteristics.. Fig 2. Typical Output Characteristics 2.5 I D =.6A V GS = V T J = 5 C 2..5.. V DS = 5V 6µs PULSE WIDTH..5 2. 2.5..5 V GS, Gate-to-Source Voltage (V) Fig. Typical Transfer Characteristics V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 6 2 I D =.6A V DS = 8V V DS = 5V V DS = 2V C oss 8 C rss 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 2 4 5 6 7 Q G Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
I D, Drain Current (A) I SD, Reverse Drain Current (A) N-Channel IRLML (KRLML) OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 5 C µsec msec. V GS = V..4.6.8. 2. V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage. T A = 25 C Tj = 5 C Single Pulse msec.. Fig 8. Maximum Safe Operating Area.5 + -.. % Fig a. Switching Time Test Circuit V DS 9%. 25 5 75. 25 5 T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current Vs. Ambient Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response ( Z thja ) D =.2..5.2... SINGLE PULSE ( THERMAL RESPONSE ) E-6 E-5.... t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient 4
V GS(th), Gate threshold Voltage (V) Power (W) R DS(on), Drain-to -Source On Resistance (mω) R DS (on), Drain-to -Source On Resistance (mω) N-Channel IRLML (KRLML) 6 55 I D =.6A 27 5 45 4 5 25 2 2 Vgs = 4.5V Vgs = V 25 2 9 5 2 4 6 8 7 2 4 6 8 V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 2. Typical On-Resistance Vs. Gate Voltage 2.5 Fig. Typical On-Resistance Vs. Drain Current 2. 8 6.5. I D = 25uA I D = 25uA 4 2-75 -5-25 25 5 75 25 5 T J, Temperature ( C ) E-5.... Time (sec) Fig 4. Typical Threshold Voltage Vs. Junction Temperature Fig 5. Typical Power Vs. Time Id Vds Vgs Vgs(th) 2K K D DUT L VCC Qgodr Qgd Qgs2 Qgs Fig 6a. Basic Gate Charge Waveform Fig 6b. Gate Charge Test Circuit 5