High-Speed Quad Monolithic SPST CMOS Analog Switch. Features Benefits Applications. Fast Settling Times Reduced Switching Glitches High Precision

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Transcription:

DG27 High-Speed Quad Monolithic SPST CMOS Analog Features Benefits Applications Fast ing : ns Low Charge Injection: pc Low r DS(on) : 32 TTL/CMOS Compatible Low Leakage: pa Description Fast Settling Times Reduced ing Glitches High Precision High Speed ing Sample/Hold Digital Filters Op Amp Gain ing Flight Control Systems Automatic Test Equipment Choppers Communication Systems The DG27 high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds. Built on proprietary high voltage silicon gate process to achieve superior on/off performance, each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. An epitaxial layer prevents latchup. Functional Block Diagram and Pin Configuration Dual-In-Line and SOIC IN 6 IN 2 Key LCC D IN IN 2 D 2 3 2 D S S 4 D 4 IN 4 2 3 4 6 7 8 4 3 2 D 2 S 2 S 3 D 3 IN 3 Top View S 4 8 S 2 7 6 6 7 S 4 8 4 S 3 2 3 D 4 IN 4 IN 3 D 3 Top View Truth Table Logic ON OFF Logic.8 V Logic 2. V Updates to this data sheet may be obtained via facsimile by calling FaxBack, -8-7-. Please request FaxBack document #743. S-37 Rev. E, 4-Jul-7

DG27 Ordering Information Temp Range Package Part Number to 7 C 6-Pin Plastic DIP DG27CJ to 8 C 6-Pin Narrow SOIC DG27DY DG27AK 6-Pin CerDIP DG27AK/883 to 2 C 62-8672MEA DG27AZ/883 LCC- 62-8672M2A Absolute Maximum Ratings to........................................... 44 V to.......................................... 2 V Digital Inputs a V S, V D................ () 2 V to () +2 V or ma, whichever occurs first Current, Any Terminal................................ ma Peak Current, S or D (Pulsed at ms, % duty cycle max)................... ma Storage Temperature (AK, AZ, DY Suffix)..... 6 to C (CJ Suffix)............. 6 to 2 C Power Dissipation (Package) b 6-Pin Plastic DIP c................................ 47 mw 6-Pin Plastic Narrow SOIC d........................ mw 6-Pin CerDIP e................................... mw LCC- f......................................... 7 mw Notes: a. Signals on S X, D X, or IN X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6. mw/ C above 7 C d. Derate 7.6 mw/ C above 7 C e. Derate 2 mw/ C above 7 C f. Derate mw/ C above 7 C Schematic Diagram (Typical Channel) V Reg S X Level Shift/ Drive IN X D X Figure. 2 S-37 Rev. E, 4-Jul-7

DG27 Specifications a Parameter Analog Symbol Conditions Unless Otherwise Specified = V, = V A Suffix to 2 C C, D Suffix to 7 C to 8 C V IN = 2.4 V,.8 V f Temp b Typ c Min d Max d Min d Max d Unit Analog Signal Range e V ANALOG V Drain-Source On-Resistance r DS(on) I S = ma, V D = V 32 7 7 Off Leakage Current I S(off) I D(off) V D = 4 V, V S = 4 V.. na Channel On Leakage Current I D(on) + I S(on) V S = V D = 4 V. Digital Control Input Current with Voltage High I INH V IN = V. A V IN = 2 V. Input Current with Voltage Low I INL V IN = V. Dynamic Characteristics Turn-On Time V S = V See Figure 2 Turn-Off Time 6 6 6 6 ns Charge Injection Q C L = nf, V S = V V gen = V, R gen = See Figure 3 pc Source Off Capacitance C S(off) VS = V, V = V 8 S IN Drain Off Capacitance C f = MHz D(off) 8 pf Channel On Capacitance C D ( on) V D = V S = V, V IN = V Off Isolation OIRR C L = pf, R L = k 8 f = khz Crosstalk X TALK See Figures 4 and Supply db Positive Supply Current I+ Negative Supply Current I All Channels On or Off. 7. 3.4 6 8 6 8 7. ma Notes: a. Refer to PROCESS OPTION FLOWCHART. b. = 2 C, = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. S-37 Rev. E, 4-Jul-7 3

DG27 Typical Characteristics rds(on) Drain-Source On-Resistance ( ) 7 r DS(on) vs. V D and Power Supply Voltages V V V V 6 2 8 4 4 8 2 6 rds(on) Drain-Source On-Resistance ( ) r DS(on) vs. V D and Temperature 8 C 2 C C C = V = V V D Drain Voltage (V) V D Drain Voltage (V) Input ing Threshold vs. Supply Voltage 2. na Leakage Currents vs. Temperature 2 I D(on) VIN ( V). Leakage na I S(off), I D(off) pa. 4 6 8 2 4 6 8 Positive/Negative Supplies (V) pa 3 2 4 6 8 2 ing Times vs. Temperature = V = V ing Time vs. Power Supply Voltage 4 4 3 3 2 2 7 2 4 6 8 2 4 6 8 Supply Voltage (V) 4 S-37 Rev. E, 4-Jul-7

DG27 Typical Characteristics (Cont d) ing Times vs. Temperature ing Times vs. Power Supply Voltage = V = V 7 t (on) t (off) 3 2 4 6 8 2 4 6 8 2 4 6 8 Positive Supply (V) Test Circuits + V Logic Input V V % t r < ns t f < ns V S D V O Input V S V O % IN V R L k C L 3 pf Output V O V C L (includes fixture and stray capacitance) R V L O = V S R L + r DS(on) Figure 2. ing Time S-37 Rev. E, 4-Jul-7