Dual swich (Half-Bridge) APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Collecor curren I C...... 45A Collecor-emier volage CES... 2 Maximum juncion emperaure T jmax... 75 C Fla base Type Copper base plae (non-plaing) Tin plaing pin erminals RoHS Direcive complian Recognized under UL557, File E323585 Dimension in mm TERMINAL SECTION A INTERNAL CONNECTION 39 38 Tr2 Di Di2 Tr NTC Th =.8 2 5 6 22 24 23 Terminal code TH 2 TH2 5 G 6 Es 22 Cs 23 C2E 24 C2E 38 G2 39 Es2 E2 C Tolerance oherwise specified Division of Dimension Tolerance.5 o 3 ±.2 over 3 o 6 ±.3 over 6 o 3 ±.5 over 3 o 2 ±.8 over 2 o 4 ±.2 The olerance of size beween erminals is assumed o be ±.4.
MAXIMUM RATINGS (T j =25 C, unless oherwise specified) INERTER PART IGBT/DIODE Symbol Iem Condiions Raing Uni CES Collecor-emier volage G-E shor-circuied 2 GES Gae-emier volage C-E shor-circuied ± 2 I C DC, T C =9 C Collecor curren Pulse, Repeiive I CRM P o Toal power dissipaion T C =25 C I E I ERM (Noe) (Noe) Emier curren DC (Noe2) (Noe2, 4) Pulse, Repeiive (Noe2, 4) (Noe3) (Noe3) 45 9 A 345 W MODULE Symbol Iem Condiions Raing Uni isol Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC min 25 T jmax Maximum juncion emperaure Insananeous even (overload) 75 T Cmax Maximum case emperaure (Noe4) T jop Operaing juncion emperaure Coninuous operaion (under swiching) -4 ~ +5 T sg Sorage emperaure - -4 ~ +25 ELECTRICAL CHARACTERISTICS (T j =25 C, unless oherwise specified) INERTER PART IGBT/DIODE Symbol Iem Condiions Limis 45 9 25 Min. Typ. Max. I CES Collecor-emier cu-off curren CE = CES, G-E shor-circuied - -. ma I GES Gae-emier leakage curren GE = GES, C-E shor-circuied - -.5 μa GE(h) Gae-emier hreshold volage I C =45 ma, CE = 5.4 6. 6.6 CEsa (Terminal) CEsa (Chip) Collecor-emier sauraion volage I C =45 A, GE =5, T j =25 C -.8 2.25 Refer o he figure of es circui T j =25 C - 2. - (Noe5) T j =5 C - 2.5 - I C =45 A, T j =25 C -.7 2.5 GE =5, T j =25 C -.9 - (Noe5) T j =5 C -.95 - C ies Inpu capaciance - - 45 C oes Oupu capaciance CE =, G-E shor-circuied - - 9. C res Reverse ransfer capaciance - -.75 Q G Gae charge CC =6, I C =45 A, GE =5-5 - nc d(on) Turn-on delay ime - - 8 CC =6, I C =45 A, GE =±5, Rise ime - - 2 r d(off) Turn-off delay ime - - 6 R G = Ω, Inducive load Fall ime - - 3 f EC (Noe) (Terminal) EC (Noe) (Chip) rr (Noe) Emier-collecor volage I E =45 A, G-E shor-circuied, T j =25 C -.8 2.25 Refer o he figure of es circui T j =25 C -.8 - (Noe5) T j =5 C -.8 - I E =45 A, T j =25 C -.7 2.5 G-E shor-circuied, T j =25 C -.7 - (Noe5) T j =5 C -.7 - Reverse recovery ime CC =6, I E =45 A, GE =±5, - - 3 ns Q rr (Noe) Reverse recovery charge R G = Ω, Inducive load - 24 - μc E on Turn-on swiching energy per pulse CC =6, I C =I E =45 A, - 54.9 - E off Turn-off swiching energy per pulse GE =±5, R G = Ω, T j =5 C, -. - E rr (Noe) Reverse recovery energy per pulse Inducive load - 32.4 - mj R CC'+EE' Inernal lead resisance Main erminals-chip, per swich, - -.7 mω (Noe4) T C =25 C r g Inernal gae resisance Per swich - 4.3 - Ω A C C Uni nf ns mj 2
ELECTRICAL CHARACTERISTICS (con.; T j =25 C, unless oherwise specified) NTC THERMISTOR PART Symbol Iem Condiions R 25 Zero-power resisance T C =25 C (Noe4) R/R Deviaion of resisance R =493 Ω, T C = C B (25/5) B-consan Approximae by equaion P 25 Power dissipaion T C =25 C (Noe4) (Noe4) (Noe6) Limis Min. Typ. Max. Uni 4.85 5. 5.5 kω -7.3 - +7.8 % - 3375 - K - - mw THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions R h(j-c)q R h(j-c)d R h(c-s) Thermal resisance Conac hermal resisance MECHANICAL CHARACTERISTICS Juncion o case, per Inverer IGBT Juncion o case, per Inverer DIODE Case o hea sink, per module, Thermal grease applied Symbol Iem Condiions (Noe4) (Noe4) Limis Min. Typ. Max. - - 44 - - 78 Uni K/kW (Noe4, 7) - 5 - K/kW Limis Min. Typ. Max. M Mouning orque Main erminals M 6 screw 3.5 4. 4.5 N m M s Mouning orque Mouning o hea sink M 5 screw 2.5 3. 3.5 N m m mass - - 35 - g d s d a Creepage disance Clearance e c Flaness of base plae On he cenerline X, Y Terminal o erminal.26 - - Terminal o base plae 2.46 - - Terminal o erminal - - Terminal o base plae.2 - - (Noe8) Uni mm mm ± - + μm Noe. Represen raings and characerisics of he ani-parallel, emier-collecor free wheeling diode (DIODE) 2. Juncion emperaure (T j ) should no increase beyond T jmax raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T j ) dose no exceed T jmax raing. 4. Case emperaure (T C ) and hea sink emperaure (T s ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. R 6. B ln( 25 ( 25 / 5) ) /( ), R5 T25 T5 R 25 : resisance a absolue emperaure T 25 [K]; T 25 =25 [ C]+273.5=298.5 [K] R 5 : resisance a absolue emperaure T 5 [K]; T 5 =5 [ C]+273.5=323.5 [K] 7. Typical value is measured by using hermally conducive grease of λ=.9 W/(m K). 8. The base plae (mouning side) flaness measuremen poins (X, Y) are as follows of he following figure. +:Convex -:Concave X Y mouning side mouning side -:Concave mouning side +:Convex 9. Use he following screws when mouning he prined circui board (PCB) on he sand offs. "φ2.6 or φ2.6 2 B apping screw" The lengh of he screw depends on hickness (.6~2.) of he PCB. 3
RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. Uni CC (DC) Supply volage Applied across C-E2 erminals - 6 85 GEon Gae (-emier drive) volage Applied across G-Es/G2-Es2 erminals 3.5 5. 6.5 R G Exernal gae resisance Per swich - Ω CHIP LOCATION (Top view) Dimension in mm, olerance: ± mm Tr/Tr2: IGBT, Di/Di2: DIODE, Th: NTC hermisor 4
TEST CIRCUIT AND WAEFORMS i E v GE ~ 9 % - GE 22 5 6 23,24 Load + CC i C ~ 9 % i E A I E Q rr =.5 I rr rr rr + GE - GE R G vge 38 39 vce i C A d(on) r d(off) f % I rr.5 I rr Swiching characerisics es circui and waveforms rr, Q rr characerisics es waveform I CM i C i C I CM i E I EM v EC CC v CE CC CC v CE A. I CM. CC. CC.2 I CM i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy DIODE Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST CIRCUIT i GE=5 22 5 I C Shorcircuied 22 5 Shorcircuied 22 5 I E Shorcircuied 22 5 Shorcircuied 6 38 23,24 GE=5 6 38 23,24 I C Shorcircuied 6 38 23,24 Shorcircuied 6 38 23,24 I E 39 39 39 39 Tr Tr2 Di Di2 CEsa characerisics es circui EC characerisics es circui 5
PERFORMANCE CURES INERTER PART OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS COLLECTOR CURRENT IC (A) 9 8 7 6 5 4 3 2 T j=25 C (Chip) GE=5 (Chip) GE =2 5 3.5 2 3 T j =5 C 9 COLLECTOR-EMITTER SATURATION OLTAGE CEsa () 3.5 2.5 2.5.5 T j =25 C T j =25 C 2 4 6 8 COLLECTOR-EMITTER OLTAGE CE () 2 3 4 5 6 7 8 9 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS FREE WHEELING DIODE FORWARD CHARACTERISTICS T j =25 C (Chip) G-E shor-circuied (Chip) 9 8 I C =9 A COLLECTOR-EMITTER SATURATION OLTAGE CEsa () 7 6 5 4 3 2 I C =45 A I C =8 A EMITTER CURRENT IE (A) T j =5 C T j =25 C T j =25 C 6 8 2 4 6 8 2 GATE-EMITTER OLTAGE GE ().5.5 2 2.5 3 EMITTER-COLLECTOR OLTAGE EC () 6
PERFORMANCE CURES INERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, GE =±5, R G = Ω, INDUCTIE LOAD ---------------: T j =5 C, - - - - -: T j =25 C d(off) HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, I C =45 A, GE =±5, INDUCTIE LOAD ---------------: T j =5 C, - - - - -: T j =25 C d(on) f d(off) d(on) r SWITCHING TIME (ns) SWITCHING TIME (ns) f r COLLECTOR CURRENT I C (A). EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, GE =±5, R G = Ω, INDUCTIE LOAD, PER PULSE ---------------: T j =5 C, - - - - -: T j =25 C HALF-BRIDGE SWITCHING CHARACTERISTICS CC =6, GE =±5, I C /I E =45 A, INDUCTIE LOAD, PER PULSE ---------------: T j =5 C, - - - - -: T j =25 C E off SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E on E rr SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E on E off E rr COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A). EXTERNAL GATE RESISTANCE R G (Ω) 7
PERFORMANCE CURES INERTER PART CAPACITANCE CHARACTERISTICS G-E shor-circuied, T j =25 C FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC =6, GE =±5, R G = Ω, INDUCTIE LOAD ---------------: T j =5 C, - - - - -: T j =25 C C ies I rr CAPACITANCE (nf) C oes rr (ns), I rr (A) rr C res.. COLLECTOR-EMITTER OLTAGE CE () EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) CC =6, I C =45 A, T j =25 C Single pulse, T C =25 C R h(j-c)q =44 K/kW, R h(j-c)d =78 K/kW 2 GATE-EMITTER OLTAGE GE () 5 5 5 5 NORMALIZED TRANSIENT THERMAL RESISTANCE Z h(j-c)........ GATE CHARGE Q G (nc) TIME (S) 8
PERFORMANCE CURES NTC hermisor par TEMPERATURE CHARACTERISTICS RESISTANCE R (kω). -5-25 25 5 75 25 TEMPERATURE T ( C) 9
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