IGBT MODULE MBM2H45E2-H Silicon N-channel IGBT 45V E2 version Spec.No.IGBT-SP-2 R3 P FEATURES Low swiching loss IGBT module. Low noise due o ulra sof fas recovery diode. Isolaed hea sink (erminal o base). ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Iem Symbol Uni MBM2H45E2-H Collecor Emier Volage VCES V 4,5 Gae Emier Volage VGES V 2 Collecor Curren DC IC 2 (Tc=8 A C) ms ICp 4 Forward Curren DC IF 2 A ms IFM 4 Peak Forward Surge Curren IFSM Ap 5 (Tj=25, 5Hz, ms Half-sinewave) Toal Power Dissipaion Po W,96 (Tc=25 per IGBT) Juncion Temperaure Tj o C -4 ~ +25 Juncion Operaing Temperaure Tjop o C -4 ~ +25 Case Temperaure Tc o C -4 ~ +25 Sorage Temperaure Tsg o C -4 ~ +25 Isolaion Volage VISO VRMS 9, (AC minue) Screw Torque Terminals (M6) - 6 () N m Mouning (M6) - 6 () Noes: () Recommended Value 5.5.5N m ELECTRICAL CHARACTERISTICS (IGBT) Iem Symbol Uni Min. Typ. Max. Tes Condiions Collecor Emier Cu-Off Curren I CES ma - - 7 Tj=25 o C - 4 6 Tj=25 o C VCE=4,5V, VGE=V Gae Emier Leakage Curren IGES na -5 - +5 VGE= 2V, VCE=V, Tj=25 o C Collecor Emier Sauraion Volage VCE(sa) V - 3.2 4.5 Tj=25 o C 3.5 4.2 4.7 Tj=25 o C IC=2A, VGE=5V Gae Emier Threshold Volage VGE(TO) V 5.4 6.4 7.4 VCE=V, IC=2mA, Tj=25 o C Gae Charge Qg C - 2. - VCC=28V, Ic=2A, VGE=+/-5V Inpu Capaciance Cies nf - 28 - Oupu Capaciance Coes nf - 2.3 - VCE=V,VGE=V, f=khz, Tj=25 o C Reverse ransfer capaciance Cres nf -. - Inernal Gae Resisance Rge - 4.8 - VCE=V,VGE=V, f=khz, Tj=25 o C Rise Time r -.9 - Tj=25 o C - 2. 4.2 Tj=25 o C Swiching Times - 2.4 - Tj=25 Turn On Time C VCC=2,8V, Ic=2A, on - 2.7 5.4 Tj=25 Ls=4nH, s C -.8 - Tj=25 RG=2Ω (2), Fall Time C f - 2.4 3.6 Tj=25 o C VGE=+/-5V Turn Off Time off - 3.6 - Tj=25 o C - 4.3 6.7 Tj=25 o C Eon(full) -.73 - Tj=25 o C Turn On Loss Eon(%) J/p -.85.3 Tj=25 o C VCC=28V, Ic=2A, Eon(full) -.92 - Tj=25 o C Ls=4nH Eoff(full) -.6 - Tj=25 o C RG= 2Ω (2) Turn Off Loss Eoff(%) J/ p.65. Tj=25 o C VGE=+/-5V Eoff(full) -.73 - Tj=25 o C Noes:(2) RG value is he es condiion s value for evaluaion of he swiching imes, no recommended value. Please, deermine he suiable RG value afer he measuremen of swiching waveforms (overshoo volage, ec.) wih appliance mouned. * Please conac our represenaives a order. * For improvemen, specificaions are subjec o change wihou noice. * For acual applicaion, please confirm his spec shee is he newes revision.
IGBT MODULE MBM2H45E2-H Spec.No.IGBT-SP-2 R3 P2 ELECTRICAL CHARACTERISTICS (DIODE) Iem Symbol Uni Min. Typ. Max. Tes Condiions - 3.6 4.5 Tj=25 Peak Forward Volage Drop VFM V o C IF=2A, VGE=V 3.2 3.9 4.7 Tj=25 o C -.5 - Tj=25 Reverse Recovery Time rr s o C -.7.4 Tj=25 o C Vcc=28V, - 23 - Tj=25 Reverse Recovery Curren Irr A o C IF=2A, Ls=4nH - 25 - Tj=25 o C RG= 2Ω - - Tj=25 Recovery charge Qrr C o C - 7 - Tj=25 o C Err(full) -.6 - Tj=25 o C VCC=28V,IF=2A, Reverse Recovery Loss Err(%) J/ p -.26.5 Tj=25 o C Ls=4nH, RG= 2Ω (3) Err(full) -.29 - Tj=25 o C Noes:(3) RG value is he es condiion s value for evaluaion of he swiching imes, no recommended value. Please, deermine he suiable RG value afer he measuremen of swiching waveforms (overshoo volage, ec.) wih appliance mouned. THERMAL CHARACTERISTICS Iem Symbol Uni Min. Typ. Max. Tes Condiions Thermal Impedance IGBT Rh(j-c) - -.52 K/W Juncion o case FWD Rh(j-c) - -.4 Conac Thermal Impedance Rh(c-f) K/W -.32 - Case o fin ( grease=w/(m K), hea-sink flaness 5um) MODULE MECHANICAL CHARACTERISTICS Iem Uni Characerisics Condiions Weigh g 84 Creepage Disance Beween erminal mm 54 Collecor-sense o Emier-main Terminal-Base mm 64 Clearance Disance Beween erminal mm 9 Collecor-sense o Emier-main Terminal-Base mm 35 Sray inducance in module LS(CM-EM) nh 4 Beween C- E2 Resisance, Terminal-chip RCC +EE m.5 Terminal o chip Comparaive Tracking Index (CTI) 6 Module base plae Maerial Cu Baseplae Thickness mm 5 Insulaion plae Maerial Al N Terminal Surface reamen Ni plaing Case Maerial Poly-Phenilene Sulfide
IGBT MODULE MBM2H45E2-H DEFINITION OF TEST CIRCUIT Ls Spec.No.IGBT-SP-2 R3 P3 LLOAD Vcc Rg G/D Fig. Swiching es circui Vce L VL Ic Ls= VL dic ( d ) =L Fig.2 Definiion of Ls Vce 9% % % r on 3 4 % 2 Ic Vge Ic Vge % 9% 5 9% % f off 6 7 8 Vce -Ic.Vce Irm IF 9 rr Vce.5Irm.IF 2 4 Eon(%)= Ic Vce d 3 2 Eon(Full)= Ic Vce d 8 Eoff(%)= Ic Vce d 7 6 Eoff(Full)= Ic Vce d 5 2 Err(%)= IF Vce d Err(Full)= IF Vce d 9 Fig.3 Definiion of swiching loss
Forward Curen, IF (A) Collecor Curren, Ic (A) Collecor Curren, Ic (A) IGBT MODULE MBM2H45E2-H STATIC CHARACTERISTICS VGE=5V 3V 4 Typical 4 Tj=25 o C Spec.No.IGBT-SP-2 R3 P4 VGE=5V 3V Typical Tj=25 o C 35 35 3 V 3 V 25 25 2 2 5 5 9V 9V 5 5 7V 2 4 6 8 Collecor o Emier Volage, VCE(V) 7V 2 4 6 8 Collecor o Emier Volage, VCE(V) Ic vs. VCE(Tj=25 o C) Ic vs. VCE(Tj=25 o C) 4 Typical VGE=V 35 3 25 Tj=25 o C Tj=25 o C 2 5 5 2 3 4 5 6 Forward Volage, VF(V) IF vs. VF
Reverse Recovery Loss, Err (J/pulse) Swiching ime, on,r,off,f,rr (us) Turn-off Loss, Eoff (J/pulse) IGBT MODULE MBM2H45E2-H DYNAMIC CHARACTERISTICS 3 Vcc=28V L=4nH RG=2Ω 3 Vcc=28V L=4nH RG=2Ω Spec.No.IGBT-SP-2 R3 P5 Eon(full) Turn-on Loss, Eon (J/pulse) 2 y = 9E-6x 2 +.23x +.9 2 y =.856E-9x 3 + 3.879E-7x 2 + 3.323E-3x + 7.334E-2 Eoff(Full) Eon(%) Eoff(%) 2 3 4 Collecor Curren, Ic (A) Turn-on loss vs. Collecor curren 2 3 4 Collecor Curren, Ic (A) Turn-off loss vs. Collecor curren.8 Vcc=28V L=4nH RG=2Ω Vcc=28V L=4nH RG=2Ω.6 off 5 y = -2E-6x 2 +.7x +.496.4 on Err(Full) f r.2 Err(%) 2 3 4 Collecor Curren, IF (-Ic) (A) Recovery loss vs. Forward curren rr 2 3 4 Collecor Curren, IC,IF(A) Swiching ime vs. Collecor curren
Reverse Recovery Loss, Err (J/pulse) Swiching ime, on,r,off,f,rr (us) Turn-on Loss, Eon (J/pulse) Turn-off Loss, Eoff (J/pulse) IGBT MODULE MBM2H45E2-H DYNAMIC CHARACTERISTICS 3 2 Vcc=28V Vcc=28V Ic=2A Ic=2A L=4nH L=4nH Spec.No.IGBT-SP-2 R3 P6 2 Eon(full) Eoff(Full) Eoff(%) Eon(%) 2 3 4 5 6 Gae Resisance, RG (Ω) Turn-on loss vs. Gae Resisance 2 3 4 5 6 Gae Resisance, RG (Ω) Turn-off loss vs. Gae Resisance.5.4 Vcc=28V Ic=2A L=4nH Condiions Vcc=28V Ic=2A L=4nH on.3 Err(%) 5 off.2 Err(Full) r. f 2 3 4 5 6 Gae Resisance, RG (Ω) rr 2 3 4 5 6 Gae Resisance, RG (Ω) Recovery loss vs. Gae Resisance Swiching ime vs. Gae Resisance
IC(A) IR(A) Cies, Coes, Cres (nf) VGE (V) IGBT MODULE. MBM2H45E2-H 5 Spec.No.IGBT-SP-2 R3 P7 Condiions: Ls=4nH,VCC=28V,VGE=+/-5V, RG(on/off)=22 /22,Tj=25 o C, Cies. 5. Coes -5 Cres -. Collecor o Emier Volage, VCE (V) Capaciance Cies, vs. Collecor Coes, Cres o Emier VCE Volage -5-2. -.5 -. -.5..5..5 2. QG (uc) QG-VGE Curve 5 5 4 4 Vcc 34V,IF 4A di/d,a/us Tj=25 o C Ls 4nH 3 3 Pmax=.5MW 2 2 Vcc 34V Tj=25 RG 2Ω,VGE=+-5V Ls 4nH Pulse widh μs VCE( spike Volage ) IC( o be urned off ) Ic Vce Definiion of RBSOA waveform 5 5 2 25 3 35 4 45 VCE (V) *Defined a auxiliary erminals RBSOA 5 5 2 25 3 35 4 45 VR(V) *Defined a auxiliary erminals RecSOA
Transien hermal impedance : Zh(j-c) (K/W) IGBT MODULE MBM2H45E2-H TRANSIENT THERMAL IMPEDANCE Spec.No.IGBT-SP-2 R3 P8 Maximum. FWD IGBT..... Time : (s) Curve approximaion model (Σrh[n]*(-exp(-/τh[n]))) Transien Thermal Impedance Curve n 2 3 4 Uni τ h[n].85e- 4.E-2 2.8E-3.54E-3 sec rh[n,igbt] 2.83E-2.64E-2 7.28E-3 8.58E- K/W rh[n,diode] 5.55E-2 3.4E-2.4E-2.E-4 K/W Maerial Declaraion Please noe he following maerial is conained in he produc in order o keep produc characerisic and reliabiliy level. Maerial Lead (Pb) and is compounds Conained par Solder
IGBT MODULE MBM2H45E2-H Module Ouline Drawing Spec.No.IGBT-SP-2 R3 P9 Uni: mm CIRCUIT DIAGRAM C C G E E/C2 G2 E2 E2
IGBT MODULE MBM2H45E2-H Spec.No.IGBT-SP-2 R3 P HITACHI POWER SEMICONDUCTORS Noices. The informaion given herein, including he specificaions and dimensions, is subjec o change wihou prior noice o improve produc characerisics. Before ordering, purchasers are advised o conac Hiachi sales deparmen for he laes version of his daa shees. 2. Please be sure o read "Precauions for Safe Use and Noices" in he individual brochure before use. 3. In cases where exremely high reliabiliy is required (such as use in nuclear power conrol, aerospace and aviaion, raffic equipmen, life-suppor-relaed medical equipmen, fuel conrol equipmen and various kinds of safey equipmen), safey should be ensured by using semiconducor devices ha feaure assured safey or by means of users fail-safe precauions or oher arrangemen. Or consul Hiachi s sales deparmen saff. 4. In no even shall Hiachi be liable for any damages ha may resul from an acciden or any oher cause during operaion of he user s unis according o his daa shees. Hiachi assumes no responsibiliy for any inellecual propery claims or any oher problems ha may resul from applicaions of informaion, producs or circuis described in his daa shees. 5. In no even shall Hiachi be liable for any failure in a semiconducor device or any secondary damage resuling from use a a value exceeding he absolue maximum raing. 6. No license is graned by his daa shees under any paens or oher righs of any hird pary or Hiachi Power Semiconducor Device, Ld. 7. This daa shees may no be reproduced or duplicaed, in any form, in whole or in par, wihou he expressed wrien permission of Hiachi Power Semiconducor Device, Ld. 8. The producs (echnologies) described in his daa shees are no o be provided o any pary whose purpose in heir applicaion will hinder mainenance of inernaional peace and safey no are hey o be applied o ha purpose by heir direc purchasers or any hird pary. When exporing hese producs (echnologies), he necessary procedures are o be aken in accordance wih relaed laws and regulaions. For inquiries relaing o he producs, please conac neares overseas represenaives ha is locaed Inquiry porion on he op page of a home page. Hiachi power semiconducor home page address hp://www.hiachi-power-semiconducor-device.co.jp/en/