N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) G D S Top View of SOT-3 () D pplications () G Switching Regulators Switching Converters S (3) N-Channel MOSFET Ordering and Marking Information PM54N ssembly Material Handling Code Temperature Range Package Code Package Code V : SOT-3 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel ssembly Material G : Halogen and Lead Free Device PM54N V : PM54N XXXXX Note: NPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-C for MSL classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). XXXXX - Date Code NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
bsolute Maximum Ratings (T = 5 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage V GSS Gate-Source Voltage ±6 V I D * Continuous Drain Current 5 V GS =V I DM * Pulsed Drain Current I S * Diode Continuous Forward Current 3 T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 C P D * Power Dissipation for Single Operation T =5 C.47 T = C.58 W R θj * Thermal Resistance-Junction to mbient 85 C/W Note : *Surface Mounted on in pad area, t sec. Electrical Characteristics (T = 5 C unless otherwise noted) PM54NV Symbol Parameter Test Conditions Unit Min. Typ. Max. STTIC CHRCTERISTICS BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =5µ - - V I DSS V DS =6V, V GS =V - - Zero Gate Voltage Drain Current µ T J =85 C - - 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =5µ.6.9.5 V I GSS Gate Leakage Current V GS =±6V, V DS =V - - ± n V GS =V, I DS =5-35 4 a R DS(ON) a V SD Drain-Source On-state Resistance V GS =4.5V, I DS =3.5-45 54 mω V GS =.5V, I DS =.5-3 Diode Forward Voltage I SD =3, V GS =V -.85.3 V GTE CHRGE CHRCTERISTICS b Q g Total Gate Charge - 3 Q gs Gate-Source Charge V DS =V, V GS =4.5V, I DS =6-3.8 - Gate-Drain Charge - 5. - Q gd nc
Electrical Characteristics (Cont.) (T = 5 C unless otherwise noted) Symbol Parameter Test Conditions DYNMIC CHRCTERISTICS b PM54NV Min. Typ. Max. t d(on) Turn-On Delay Time - 7 T r Turn-On Rise Time V DD =V, R L =Ω, - 5 5 I DS =, V GEN =4.5V, t d(off) Turn-Off Delay Time R G =6Ω - 9 6 Turn-Off Fall Time - 6 7 T f R G Gate Resistance V GS =V,V DS =V,F=MHz -.5 - Ω C iss Input Capacitance V GS =V, - 45 - C oss Output Capacitance V DS =V, - - Reverse Transfer Capacitance Frequency=.MHz - 6 - C rss Note a : Pulse test ; pulse width 3µs, duty cycle %. Note b : Guaranteed by design, not subject to production testing. Unit ns pf 3
Typical Operating Characteristics Power Dissipation Drain Current.6 6.4 5. Ptot - Power (W)..8.6.4 ID - Drain Current () 4 3. T =5 o C. 4 6 8 4 6 T =5 o C,V G =V 4 6 8 4 6 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) ID - Drain Current () Safe Operation rea Rds(on) Limit 3µs ms ms ms s. DC T. =5 o C. 6 VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance.. Thermal Transient Impedance...5. Single Pulse. Duty =.5 Mounted on in pad R θj :85 o C/W E-3 E-4 E-3.. Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance ID - Drain Current () 8 6 4 8 6 4 V GS = 4, 5, 6, 7, 8, 9, V 3V V RDS(ON) - On - Resistance (mω) 6 4 8 6 4 V GS =.5V V GS =4.5V V GS =V 4 6 8 4 8 6 VDS - Drain - Source Voltage (V) ID - Drain Current () Transfer Characteristics Gate Threshold Voltage 8.6.4 I DS =5µ ID - Drain Current () 6 4 8 6 4 T j =5 o C T j =5 o C T j =-55 o C Normalized Threshold Voltage...8.6.4. 3 4 5 VGS - Gate - Source Voltage (V). -5-5 5 5 75 5 5 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance.4...8.6.4...8.6.4 V GS = V I DS = 5 IS - Source Current () T j =5 o C T j =5 o C. R ON @T j =5 o C: 35mΩ. -5-5 5 5 75 5 5...4.6.8...4 Tj - Junction Temperature ( C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 7 6 5 4 3 Crss Coss Frequency=MHz Ciss VGS - Gate-source Voltage (V) 9 8 7 6 5 4 3 V DS =V I D = 5 4 8 6 VDS - Drain - Source Voltage (V) 4 8 6 4 QG - Gate Charge (nc) 6
Package Information SOT-3 D b SEE VIEW E E e c e b L.5 GUGE PLNE SETING PLNE VIEW S Y M MILLIMETERS B O L MIN. MX...8..5.7 b b c D E E e.66.84.9 3..3.33 6.3 6.7 6.7 3.3 3.7.3 BSC 7.3 SOT-3 MIN.. INCHES.9 BSC MX..7.59.67.6.33.4..9.3.64 L.75.3.4.48.64.87.3.46 e 4.6 BSC.8 BSC Note :. Follow from JEDEC TO-6.. Dimension D and E are determined at the outermost extremes of the plastic exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but including any mismatch between the top and bottom of the plastic body. 7
Carrier Tape & Reel Dimensions OD P P P H E OD B T B W F K B SECTION - SECTION B-B d T pplication H T C d D W E F.4+. 3.+.5 3.. 5 MIN..5 MIN.. MIN...3.75. 5.5.5 -. -. SOT-3 P P P D D T B K.5+..6+. 4.. 8....5.5 MIN. -. -.4 6.9. 7.5... Devices Per Unit Package Type Unit Quantity SOT-3 Tape & Reel 5 (mm) 8
Taping Direction Information SOT-3 USER DIRECTION OF FEED Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin t L Ramp-down ts Preheat 5 t 5 C to Peak Time Reliability Test Program Test item Method Description SOLDERBILITY MIL-STD-883D-3 45 C, 5 sec HOLT MIL-STD-883D-5.7 Hrs Bias @5 C PCT JESD--B, 68 Hrs, %RH, C TST MIL-STD-883D-.9-65 C~5 C, Cycles 9
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly verage ramp-up rate (T L to T P) 3 C/second max. 3 C/second max. Preheat C 5 C - Temperature Min (Tsmin) 5 C C - Temperature Max (Tsmax) 6- seconds 6-8 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (t L) 83 C 6-5 seconds 7 C 6-5 seconds Peak/Classification Temperature (Tp) See table See table Time within 5 C of actual Peak Temperature (tp) -3 seconds -4 seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 5 C to Peak Temperature 6 minutes max. 8 minutes max. Note: ll temperatures refer to topside of the package. Measured on the body surface. Table. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 Table. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 <35 Volume mm 3 35- Volume mm 3 Volume mm 3 > <.6 mm 6 + C* 6 + C* 6 + C*.6 mm.5 mm 6 + C* 5 + C* 45 + C*.5 mm 5 + C* 45 + C* 45 + C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 6 C+ C) at the rated MSL level. 35 <.5 mm 4 +/-5 C 5 +/-5 C.5 mm 5 +/-5 C 5 +/-5 C Customer Service npec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-564 Fax : 886-3-5645 Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindain City, Taipei County 346, Taiwan Tel : 886--9-3838 Fax : 886--97-3838