MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features Lead Formed for Surface Mount pplications in Plastic Sleeves (No Suffix) Electrically Similar to Popular MJE and MJE (Min) CEO(sus). Rated Collector Current Epoxy Meets UL 9 @ in ESD Ratings: Human Body Model, B 8 Machine Model, C These are Pb Free Packages MXIMUM RTINGS Rating Symbol Max Unit Collector Emitter oltage CEO dc Collector Base oltage CB dc Emitter Base oltage EB dc Collector Current Continuous Peak Total Power Dissipation @ T C = C Derate above C Total Power Dissipation (Note ) @ T = C Derate above C Operating and Storage Junction Temperature Range THERML CHRCTERISTICS I C..7 P D P D.6. dc W W/ C W W/ C T J, T stg 6 to + C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 8. C/W Thermal Resistance, Junction to mbient (Note ) R J 8 C/W SILICON POWER TRNSISTORS. MPERE OLTS, WTTS CSE 69C STYLE MRKING DIGRM Y WW Jx G YWW JxG = ssembly Location = Year = Work Week = Device Code x= or = Pb Free Package ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Leading Temperature for Soldering Purpose T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, January, Rev. 8 Publication Order Number: MJD/D
MJD (NPN) MJD (PNP) ÎÎ ELECTRICL CHRCTERISTICS (T C = C unless otherwise noted) Characteristic Symbol Min Max Unit ÎÎ OFF CHRCTERISTICS ÎÎ Collector Emitter Sustaining oltage (Note ) (I C = m, I B = ) CEO(sus) Collector Cutoff Current I CEO ( CB =, I E = ) ÎÎ. m Emitter Cutoff Current I EBO. m ( BE =, I C = ) ÎÎ ON CHRCTERISTICS (Note ) ÎÎ DC Current Gain h (I C = m, CE FE ÎÎ = ) Collector Emitter Saturation oltage CE(sat) ÎÎ (I C = m, I B = m) ÎÎ Base Emitter On oltage BE(on) (I C =, CE = ) ÎÎ. DYNMIC CHRCTERISTICS ÎÎ Current Gain Bandwidth Product f T ÎÎ MHz (I C = m, CE =, f = MHz). Pulse Test: Pulse Width s, Duty Cycle %. TYPICL CHRCTERISTICS MJD hfe, DC CURRENT GIN 7 T J = C + C + C - C CE = CE = 7 7 I C, COLLECTOR CURRENT (mdc) Figure. DC Current Gain
MJD (NPN) MJD (PNP) MJD.8 T J = C BE(sat) @ I C /I B =, OLTGE (OLTS).6. BE @ CE = CE(sat) @ I C /I B = I C /I B = Figure. On oltages MJD MJD T J = C T J = C hfe, DC CURRENT GIN 7 C - C CE = CC = 7 7, OLTGE (OLTS).8.6. BE(sat) @ I C /I B = BE @ CE = I C /I B = CE(sat) I C /I B = 7 7 Figure. DC Current Gain Figure. On oltages.7. D =. r(t), TRNSIENT THERML RESISTNCE (NORMLIZED)...7...... SINGLE PULSE R JC(t) = r(t) R JC R JC = 8. C/W MX D CURES PPLY FOR POWER PULSE TRIN SHOWN RED TIME T t T J(pk) - T C = P (pk) JC(t) P (pk) t t DUTY CYCLE, D = t /t........ k t, TIME (ms) Figure. Thermal Response
MJD (NPN) MJD (PNP) IC, COLLECTOR CURRENT (m) s s ms dc 7 7 CE, COLLECTOR-EMITTER OLTGE (OLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) C. T J(pk) may be calculated from the data in Figure. t high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 6. ctive Region Safe Operating rea T. T C PD, POWER DISSIPTION (WTTS).. T C T 7 T, TEMPERTURE ( C) Figure 7. Power Derating ORDERING INFORMTION MJDG Device Package Shipping 7 Units / Rail MJDRLG MJDTG MJDG 8 / Tape & Reel / Tape & Reel 7 Units / Rail MJDTG / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.
MJD (NPN) MJD (PNP) PCKGE DIMENSIONS CSE 69C ISSUE D L L b e E b b D B DETIL c. (.) M C C c H L GUGE PLNE L L DETIL ROTTED 9 CW SOLDERING FOOTPRINT* 6..8. H..8 C Z SETING PLNE NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.M, 99.. CONTROLLING DIMENSION: INCHES.. THERML PD CONTOUR OPTIONL WITHIN DI- MENSIONS b, L and Z.. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR BURRS. MOLD FLSH, PROTRUSIONS, OR GTE BURRS SHLL NOT EXCEED.6 INCHES PER SIDE.. DIMENSIONS D ND E RE DETERMINED T THE OUTERMOST EXTREMES OF THE PLSTIC BODY. 6. DTUMS ND B RE DETERMINED T DTUM PLNE H. INCHES MILLIMETERS DIM MIN MX MIN MX.86.9.8.8.... b...6.89 b...76. b.8.7.6 c.8..6.6 c.8..6.6 D.97 6. E. 6 6. 6.7 e.9 BSC.9 BSC H.7. 9.. L..7..78 L.8 REF.7 REF L. BSC. BSC L...89.7 L.. Z..9 STYLE : PIN. BSE. COLLECTOR. EMITTER. COLLECTOR.8 8.6.6 6.7 SCLE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 US Phone: 67 7 or 8 86 Toll Free US/Canada Fax: 67 76 or 8 867 Toll Free US/Canada Email: orderlit@onsemi.com N. merican Technical Support: 8 8 98 Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 8 77 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD/D