MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
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1 MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features High DC Current 1 Adc h FE = 4 Min (All Types) Collector Emitter Sustaining Voltage V CEO(sus) = 15 Vdc (Min) MJH1118, 17 = 2 Vdc (Min) MJH112, 19 = 25 Vdc (Min) MJH1122, 21 Low Collector Emitter Saturation Voltage V CE(sat) = 1.2 V I C = 5. A = 1.8 V I C = 1 A Monolithic Construction Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Max Unit Collector Emitter Voltage MJH1118, MJH1117 MJH112, MJH1119 MJH1122, MJH1121 Collector Base Voltage MJH1118, MJH1117 MJH112, MJH1119 MJH1122, MJH1121 V CEO V CB Vdc Vdc Emitter Base Voltage V EB 5. Vdc Collector Current Continuous Peak (Note 1) I C 15 3 Adc Base Current I B.5 Adc Total Device T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D T J, T stg 65 to + 15 W W/ C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC.83 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5. ms, Duty Cycle 1%. C 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS, 15 WATTS BASE COLLECTOR 2 EMITTER 3 MJH1118 MJH112 MJH1122 BASE 1 COLLECTOR 2 EMITTER 3 MJH1117 MJH1119 MJH1121 SOT 93 () CASE 34D STYLE 1 CASE 34L STYLE 3 NOTE: Effective June 212 this device will be available only in the package. Reference FPCN# ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 212 July, 212 Rev. 9 1 Publication Order Number: MJH1117/D
2 MARKING DIAGRAMS MJH11xx AYWWG AYWWG MJH11xx 1 BASE 2 COLLECTOR 3 EMITTER 1 BASE 2 COLLECTOR A = Assembly Location Y = Year WW = Work Week G = Pb Free Package MJH11xx = Device Code xx = 17, 19, 21, 18, 2, 22 3 EMITTER ORDERING INFORMATION Device Order Number Package Type Shipping MJH1117G MJH1118G MJH1119G MJH112G MJH1121G MJH1122G MJH1117G MJH1118G MJH1119G MJH112G MJH1121G MJH1122G 2
3 16 PD, POWER DISSIPATION (WATTS) T C, CASE TEMPERATURE ( C) Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) ÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS ÎÎ Collector Emitter Sustaining Voltage (Note 2) V (I C =.1 Adc, I B = ) MJH1117, MJH1118 CEO(sus) Vdc ÎÎ MJH1119, MJH112 MJH1121, MJH1122 ÎÎ ÎÎ Collector Cutoff Current I (V CE = 75 Vdc, I B = ) MJH1117, MJH1118 CEO madc ÎÎ (V CE = 1 Vdc, I B = ) MJH1119, MJH112 (V CE = 125 Vdc, I B = ) MJH1121, MJH1122 ÎÎ ÎÎ Collector Cutoff Current I CEV madc (V CE = Rated V CB, V BE(off) = 1.5 Vdc) ÎÎ.5 (V CE = Rated V CB, V BE(off) = 1.5 Vdc, T J = 15 C) 5. ÎÎ Emitter Cutoff Current (V BE = 5. Vdc I C = ) I EBO 2. madc ÎÎ ON CHARACTERISTICS (Note 2) ÎÎ DC Current Gain h (I C = 1 Adc, V CE = 5. Vdc) FE (I C = 15 Adc, V CE = 5. Vdc) ÎÎ 4 15, 1 Collector Emitter Saturation Voltage (I C = 1 Adc, I B V CE(sat) = 1 ma) (I C = 15 Adc, I B = 15 ma) Vdc 4. Base Emitter On Voltage (I C = 1 A, V CE = 5. Vdc) V BE(on) 2.8 Vdc Base Emitter Saturation Voltage (I C = 15 Adc, I B = 15 ma) V BE(sat) 3.8 Vdc ÎÎ DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (I C = 1 Adc, V CE = 3. Vdc, f = MHz) f T 3. Output Capacitance MJH1118, MJH112, MJH1122 C ob (V CB = 1 Vdc, I E 4 pf =, f =.1 MHz) MJH1117, MJH1119, MJH Î Small Signal Current Gain (I C = 1 Adc, V CE = 3. Vdc, f = khz) h fe 75 ÎÎ ÎÎ SWITCHING CHARACTERISTICS ÎÎ Typical Characteristic Symbol Unit Delay Time t d ns Rise Time (V Î CC = 1 V, I C = 1 A, I B = 1 ma t r s Storage Time V BE(off) = 5. V) (See Figure 2) t s s Fall Time ÎÎ 2. Pulse Test: Pulse Width = 3 s, Duty Cycle 2.%. t f s 3
4 R B & R C varied to obtain desired current levels D 1, must be fast recovery types, e.g.: 1N5825 used above I B 1 ma MSD61 used below I B 1 ma t r, t f 1 ns Duty Cycle = % V2 APPROX +12 V V1 APPROX - 8. V 25 s Figure 2. Switching Times Test Circuit 51 TUT V CC 1 V For t d and t r, D 1 is disconnected and V2 = For test circuit, reverse diode and voltage polarities. R B D V R C SCOPE r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = SINGLE PULSE.1 R JC (t) = r(t) R JC R JC =.83 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) R JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t t, TIME (ms) 1 Figure 3. Thermal Response IC, COLLECTOR CURRENT (AMPS) T C = 25 C SINGLE PULSE.5 ms ms 5. ms dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJH1117, MJH1118 MJH1119, MJH112 MJH1121, MJH1122 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS).1 ms Figure 4. Maximum Rated Forward Bias Safe Operating Area (FBSOA) FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1% provided T J(pk) 15 C. T J(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 4
5 IC, COLLECTOR CURRENT (AMPS) L = 2 H I C /I B1 5 T C = 1 C V BE(off) = - 5. V R BE = 47 DUTY CYCLE = 1% MJH1117, MJH1118 MJH1119, MJH112 MJH1121, MJH V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 26 REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current conditions during reverse biased turn off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives RBSOA characteristics. Figure 5. Maximum Rated Reverse Bias Safe Operating Area (RBSOA) 1, 7 5 V CE = 5. V 1, 5 V CE = 5. V h FE, DC CURRENT GAIN T C = 15 C 25 C hfe, DC CURRENT GAIN T C = 15 C 25 C - 55 C 2-55 C I C, COLLECTOR CURRENT (AMPS) I C, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain 5
6 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VOLTAGE (VOLTS) T J = 25 C T J = 25 C 5 1 I B, BASE CURRENT (ma) V I C /I B = 1 V V CE = 5. V I C, COLLECTOR CURRENT (AMPS) I C = 5. A I C = 15 A I C = 1 A V I C /I B = VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) T J = 25 C Figure 7. Collector Saturation Region I B, BASE CURRENT (ma) I C, COLLECTOR CURRENT (AMPS) I C = 15 A I C = 1 A 1.5 I C = 5. A T J = 25 C V I C /I B = 1 V V CE = 5. V V I C /I B = Figure 8. On Voltages MJH1117 MJH1119 MJH1121 COLLECTOR MJH1118 MJH112 MJH1122 COLLECTOR BASE BASE EMITTER EMITTER Figure 9. Darlington Schematic 6
7 PACKAGE DIMENSIONS SOT 93 () CASE 34D 2 ISSUE E B Q E C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. K S L U V G 4 D A J H MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E G H J K 3 REF 1.22 REF L Q S U 4. REF.157 REF V 1.75 REF.69 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 34L 2 ISSUE F N A K F 2 PL B U L P Y W J G D 3 PL.25 (.1) M Y Q S C T E H 4 Q.63 (.25) M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E F G 5.45 BSC.215 BSC H J K L N P Q U 6.15 BSC.242 BSC W STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 7
8 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MJH1117/D
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