J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS
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1 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD7 thru MJD Series Epoxy Meets UL 9 5 in These Devices are PbFree and are RoHS Compliant MXIMUM RTINGS Rating Symbol Max Unit CollectorEmitter Voltage V CEO EmitterBase Voltage V EB 5 Collector Current Continuous I C. dc Collector Current Peak I CM. dc Total Power T C = 25 C Derate above 25 C Total Power Dissipation (Note T = 25 C Derate above 25 C Unclamped Inductive Load Energy (See Figure ) Operating and Storage Junction Temperature Range P D 5 P D W W/ C W W/ C E 2 mj T J, T stg 55 to + C ESD Human Body Model HBM B V ESD Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. These ratings are applicable when surface mounted on the minimum pad sizes recommended. THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 8. C/W Thermal Resistance, Junctiontombient (Note 2) R J 8 C/W Lead Temperature for Soldering T L 26 C 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. SILICON POWER TRNSISTORS. MPERE VOLTS, 5 WTTS Y WW J57 G BSE 2 2, EMITTER DPK CSE 69C STYLE MRKING DIGRM YWW J 57G = ssembly Location = Year = Work Week = Device Code = PbFree Package ORDERING INFORMTION Device Package Shipping TG DPK 2/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, LLC, 2 ugust, 2 Rev. 5 Publication Order Number: /D
2 ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHRCTERISTICS CollectorEmitter Sustaining Voltage (Note ) V CEO(sus) ÎÎÎ (I C = mdc, I B = ) Collector Cutoff Current I CEO ÎÎÎ mdc (V CE = 2, I B = ). Collector Cutoff Current I (V CE =, V BE = ) CES mdc. Emitter Cutoff Current I EBO ÎÎÎ mdc (V BE =, I C = ) ÎÎÎ ON CHRCTERISTICS (Note ) DC Current Gain h (I C =. dc, V CE FE ÎÎÎ = ) 75 (I C =. dc, V CE = ) CollectorEmitter Saturation Voltage V CE(sat) ÎÎÎ (I C =. dc, I B = dc). BaseEmitter On Voltage V (I C =. dc, V CE = ) BE(on).5 DYNMIC CHRCTERISTICS Current Gain Bandwidth Product f T ÎÎÎ MHz (I C = dc, V CE =, f = MHz) SmallSignal Current Gain h fe ÎÎÎ (I C = dc, V CE =, f =. khz). Pulse Test: Pulse Width s, Duty Cycle %. 25 hfe, DC CURRENT GIN 2 V CE = V T J = C 25 C - 55 C I C, CURRENT (MPS) V CE, -EMITTER VOLTGE (VOLTS) C C V I C /I B = I C, CURRENT (MPS) Figure. DC Current Gain Figure 2. CollectorEmitter Saturation Voltage 2
3 V, VOLTGE (V). V I C /I B = T J = - 55 C 25 C C V, VOLTGE (VOLTS) V I C /I B = 5 V V V CE = V.. V I C /I B = 5 V I C, CURRENT (MPS) I C, CURRENT (MPS) Figure. BaseEmitter Voltage Figure. On Voltages IC, CURRENT (MP) T C = 25 C dc BONDING WIRE LIMIT THERML LIMIT SECOND BREKDOWN LIMIT 2. ms s V CE, -EMITTER VOLTGE (VOLTS) s 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) C. T J(pk) may be calculated from the data in Figure 6. t high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Forward Bias Safe Operating rea.7 D = r(t), TRNSIENT THERML RESISTNCE (NORMLIZED) SINGLE PULSE R JC(t) = r(t) R JC R JC = 8. C/W MX D CURVES PPLY FOR POWER PULSE TRIN SHOWN RED TIME T t T J(pk) - T C = P (pk) JC(t) P (pk) t t 2 DUTY CYCLE, D = t /t t, TIME (ms) Figure 6. Thermal Response k
4 TURN-ON PULSE t V BE(off) V in P PROX. - V V t 7. ns t 2 < s t < 5 ns V CC V in R C R B SCOPE t 2 t 5 C jd << C eb PPROX V DUTY CYCLE % +. V TURN-OFF PULSE Figure 7. Switching Time Equivalent Circuit t, TIME ( s) μ t d t r V CC = 2 V I C /I B = t, TIME ( s) μ.... t s t f V CC = 2 V I C /I B = I C, CURRENT (MPS) Figure 8. TurnOn Resistive Switching Times I C, CURRENT (MPS) Figure 9. Resistive TurnOff Switching Times Test Circuit Voltage and Current Waveforms INPUT MJE7 V BB = V R BB = R BB2 = + - V BB2 = V CE MONITOR TUT + - R S =. mh V CC = 2 V I C MONITOR INPUT VOLTGE V - 5 V CURRENT V V CER VOLTGE t w ms (SEE NOTE ) ms V V CE(sat) Figure. Inductive Load Switching
5 PCKGE DIMENSIONS DPK CSE 69C ISSUE D L L b2 e E b 2 b D B DETIL c.5 (.) M C C c2 H L2 GUGE PLNE L L DETIL ROTTED 9 CW H C Z SETING PLNE NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.5M, CONTROLLING DIMENSION: INCHES.. THERML PD CONTOUR OPTIONL WITHIN DI- MENSIONS b, L and Z.. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR BURRS. MOLD FLSH, PROTRUSIONS, OR GTE BURRS SHLL NOT EXCEED.6 INCHES PER SIDE. 5. DIMENSIONS D ND E RE DETERMINED T THE OUTERMOST EXTREMES OF THE PLSTIC BODY. 6. DTUMS ND B RE DETERMINED T DTUM PLNE H. INCHES MILLIMETERS DIM MIN MX MIN MX b b b c.8.2 c2.8.2 D E e.9 BSC 2.29 BSC H L L.8 REF 2.7 REF L2.2 BSC BSC L L.. Z 5.9 SOLDERING FOOTPRINT* STYLE : PIN. BSE 2.. EMITTER SCLE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 US Phone: or 886 Toll Free US/Canada Fax: or 8867 Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative /D
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