HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Fast Recovery Time Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Key Parameters Parameter Value Unit BS @T j,max 650 V I D 47 A R DS(on), max 80 mω Qg, Typ 4 nc Package & Internal Circuit G D S TO-247 May 208 Absolute Maximum Ratings T J =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 600 V Gate-Source Voltage ±30 V I D Drain Current Continuous (T C = 25 ) 47.0 A Drain Current Continuous (T C = 00 ) 29.7 A I DM Drain Current Pulsed (Note ) 4 A E AS Single Pulsed Avalanche Energy (Note 2) 20 mj I AR Avalanche Current (Note ) 5 A E AR Repetitive Avalanche Energy (Note ).76 mj P D Power Dissipation (T C = 25 ) 390 W T J, T STG Operating and Storage Temperature Range -55 to +50 T L Maximum lead temperature for soldering purposes, /8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case -- 0.32 /W R θja Junction-to-Ambient -- 62.5
Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, I D = 250 μa 2.5 -- 4.5 V R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 μa 600 -- -- V I DSS Static Drain-Source On-Resistance Zero Gate Voltage Drain Current = 600 V, = 0 V -- -- 5 μa = 600 V, T J = 50 -- -- 00 μa I GSS Gate-Body Leakage Current = ±30 V, = 0 V -- -- ±00 na Dynamic Characteristics = 0 V, I D = 20 A -- 65 80 mω g FS Forward Transconductance = 0 V, I D = 20 A -- 40 -- S C iss Input Capacitance -- 500 -- pf C oss Output Capacitance = 50 V, = 0 V, f =.0 MHz -- 225 -- pf C rss Reverse Transfer Capacitance -- 6.2 -- pf Switching Characteristics t d(on) Turn-On Time -- 6 -- ns t = 400 V, I D = 26 A, r Turn-On Rise Time -- 2 -- ns R G =.7 Ω t d(off) Turn-Off Delay Time -- 83 -- ns t f Turn-Off Fall Time -- 5 -- ns Q g Total Gate Charge = 480 V, I D = 47 A -- 90 -- nc Q gs Gate-Source Charge = 0 V -- 24 -- nc Q gd Gate-Drain Charge -- 30 -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 47 I SM Pulsed Source-Drain Diode Forward Current -- -- 4 V SD Source-Drain Diode Forward Voltage I S = 47 A, = 0 V -- --.2 V trr Reverse Recovery Time -- 80 -- ns Qrr Reverse Recovery Charge I S = 26 A, V R = 400 V di F /dt = 00 A/μs -- -- μc Irrm Peak Reverse Recovery Current -- 0 -- A Notes ;. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS =5A, =50V, R G =25Ω, Starting T J =25 C 3. Pulse Test : Pulse Width 300μs, Duty Cycle % A
Typical Characteristics Figure. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) I D [A] B VDSS (Normalized).2. 0.9 Notes. = 0 V 2. I D = 250 ua 0.8-00 -50 0 50 00 50 200 000 00 0 0. T J [ ] Figure 7. Breakdown Voltage Variation vs Temperature DC ms 00us 0us us R DS(on) (Normalized) I D [A] 3 2.5 2.5 0.5 Notes. = 0 V 2. I D = 20 A 0-00 -50 0 50 00 50 200 50 40 30 20 T J [ ] Figure 8. On-Resistance Variation vs Temperature Notes 0.0. T C = 25 2. T J(MAX) = 50 3. Single Pulse 0.00 0. 0 00 000 [V] Figure 9. Maximum Safe Operating Area 0 0 25 50 75 00 25 50 T C [ ] Figure 0. Maximum Drain Current vs Case Temperature Z θjc [K/W] 0. 0.0 0.00 0.5 0.2 0. 0.05 0.02 0.0 single pulse 0.000 0.000000 0.00000 0.0000 0.000 0.00 0.0 0. t P [S] Figure. Transient Thermal Response Curve
2V 200nF 3mA R G 50KΩ 300nF Fig 2. Gate Charge Test Circuit & Waveform Same Type as Fig 3. Resistive Switching Test Circuit & Waveforms R L ( 0.5 rated ) 0V Q gs 90% Q g Q gd Charge 0V V in 0% t d(on) t r t d(off) tf t on t off Fig 4. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- L L I 2 2 AS BS -------------------- BS -- I D BS I AS R G I D (t) 0V (t) t p Time
Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I S Driver + _ Same Type as L dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension TO-247