Collecor curren I C...... 6 A Collecor-emier volage CES... 2 Maximum juncion emperaure T jmax... 7 C Fla base Type Copper base plae (non-plaing) Tin plaing pin erminals dual swich (Half-Bridge) RoHS Direcive complian Recognized under UL7, File E28 APPLICATION AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm TERMINAL =.8 SECTION A DETAIL B INTERNAL CONNECTION SECTION C-C 9 8 Tr2 Di Di2 Tr NTC Th 2 4 7 6 Terminal code TH 2 TH2 G 4 Es Cs 6 C2E 7 C2E 8 G2 9 Es2 E2 C Tolerance oherwise specified Division of Dimension Tolerance. o ±.2 over o 6 ±. over 6 o ±. over o 2 ±.8 over 2 o 4 ±.2 Publicaion Dae : July 24 CMH-
MAXIMUM RATINGS (T j=2 C, unless oherwise specified) INERTER PART IGBT/DIODE Symbol Iem Condiions Raing Uni CES Collecor-emier volage G-E shor-circuied 2 GES Gae-emier volage C-E shor-circuied ± 2 I C DC, T C =94 C (Noe2, 4) 6 Collecor curren I CRM Pulse, Repeiive, GE= (Noe) 2 P o Toal power dissipaion T C =2 C (Noe2, 4) W (Noe) I E DC (Noe2) 6 Emier curren I (Noe) ERM Pulse, Repeiive (Noe) 2 MODULE Symbol Iem Condiions Raing Uni isol Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC min 4 T j max Maximum juncion emperaure Insananeous even (overload) 7 T Cmax Maximum case emperaure (Noe4) T j op Operaing juncion emperaure Coninuous operaion (under swiching) -4 ~ + T sg Sorage emperaure - -4 ~ +2 ELECTRICAL CHARACTERISTICS (T j=2 C, unless oherwise specified) INERTER PART IGBT/DIODE Symbol Iem Condiions Limis 2 Min. Typ. Max. I CES Collecor-emier cu-off curren CE = CES, G-E shor-circuied - -. ma I GES Gae-emier leakage curren GE = GES, C-E shor-circuied - -. μa GE(h) Gae-emier hreshold volage I C =6 ma, CE =.4 6. 6.6 CEsa (Terminal) CEsa (Chip) C ies Collecor-emier sauraion volage Inpu capaciance I C =6 A, GE =, T j =2 C - 2. 2.4 Refer o he figure of es circui T j =2 C - 2. - (Noe) T j = C - 2.4 - I C =6 A, T j =2 C -.8 2. GE =, T j =2 C - 2. - (Noe) T j = C - 2. - - - C oes Oupu capaciance CE =, G-E shor-circuied - - C res Reverse ransfer capaciance - -.8 Q G Gae charge CC =6, I C =6 A, GE = - - nc d(on) Turn-on delay ime - - 8 CC =6, I C =6 A, GE =±, r Rise ime - - 2 d(off) Turn-off delay ime - - 6 R G = Ω, Inducive load f Fall ime - - EC (Noe) (Terminal) EC (Noe) (Chip) rr (Noe) Emier-collecor volage I E =6 A, G-E shor-circuied, T j =2 C - 2.8.6 Refer o he figure of es circui T j =2 C - 2.4 - (Noe) T j = C - 2. - I E =6 A, T j =2 C - 2.7. G-E shor-circuied, T j =2 C - 2. - (Noe) T j = C - 2.2 - Reverse recovery ime CC =6, I E =6 A, GE =±, - - ns Q rr (Noe) Reverse recovery charge R G= Ω, Inducive load - 6 - μc E on Turn-on swiching energy per pulse CC=6, I C=I E=6 A, - 9. - E off Turn-off swiching energy per pulse GE=±, R G= Ω, T j = C, - 6. - E rr (Noe) Reverse recovery energy per pulse Inducive load - 6. - mj R CC'+EE' Inernal lead resisance Main erminals-chip, per swich, T C =2 C (Noe4) A A C C Uni nf ns mj - -.4 mω r g Inernal gae resisance Per swich -. - Ω Publicaion Dae : July 24 2 CMH-
ELECTRICAL CHARACTERISTICS (con.; T j=2 C, unless oherwise specified) NTC THERMISTOR PART Symbol Iem Condiions Limis Min. Typ. Max. R 2 Zero-power resisance T C =2 C (Noe4) 4.8.. kω ΔR/R Deviaion of resisance R =49 Ω, T C = C (Noe4) -7. - +7.8 % B (2/) B-consan Approximae by equaion (Noe6) Uni - 7 - K P 2 Power dissipaion T C =2 C (Noe4) - - mw THERMAL RESISTANCE CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. R h(j-c)q Juncion o case, per Inverer IGBT (Noe4) - - 4 Thermal resisance R h(j-c)d Juncion o case, per Inverer DIODE (Noe4) - - 72 R h(c- s ) Conac hermal resisance MECHANICAL CHARACTERISTICS Case o hea sink, per module, Thermal grease applied Symbol Iem Condiions (Noe4, 7) Uni K/kW - - K/kW Limis Min. Typ. Max. M Mouning orque Main erminals M 6 screw. 4. 4. N m M s Mouning orque Mouning o hea sink M screw 2... N m m mass - - - g d s d a Creepage disance Clearance e c Flaness of base plae On he cenerline X, Y Terminal o erminal 7 - - Terminal o base plae 8. - - Terminal o erminal - - Terminal o base plae 6. - - (Noe8) Uni mm mm ± - + μm Noe. Represen raings and characerisics of he ani-parallel, emier-collecor free wheeling diode (DIODE) 2. Juncion emperaure (T j ) should no increase beyond T jmax raing.. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T j ) dose no exceed T jmax raing. 4. Case emperaure (T C) and hea sink emperaure (T s) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion.. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. R 6. B ln( 2 ( 2 / ) = )/( ), R T2 T R 2: resisance a absolue emperaure T 2 [K]; T 2=2 [ C]+27.=298. [K] R : resisance a absolue emperaure T [K]; T = [ C]+27.=2. [K] 7. Typical value is measured by using hermally conducive grease of λ=.9 W/(m K). 8. The base plae (mouning side) flaness measuremen poins (X, Y) are as follows of he following figure. +:Convex -:Concave X Y mouning side mouning side -:Concave mouning side +:Convex 9. Use he following screws when mouning he prined circui board (PCB) on he sandoffs. "φ2.6 or φ2.6 2, B apping screw" The lengh of he screw depends on hickness (.6~2.) of he PCB. Publicaion Dae : July 24 CMH-
RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. CC (DC) Supply volage Applied across C-E2 erminals - 6 8 GEon Gae (-emier drive) volage Applied across G-Es/G2-Es2 erminals 4.. 6. R G Exernal gae resisance Per swich - 6.8 Ω Uni CHIP LOCATION (Top view) Dimension in mm, olerance: ± mm Tr/Tr2: IGBT, Di/Di2: DIODE, Th: NTC hermisor Publicaion Dae : July 24 4 CMH-
TEST CIRCUIT AND WAEFORMS i E v GE ~ 9 % - GE 4 6,7 Load + CC i C ~ 9 % i E A I E Q rr =. I rr rr rr + GE - GE R G vge 8 9 vce i C A d(on) r d(off) f % I rr. I rr Swiching characerisics es circui and waveforms rr, Q rr characerisics es waveform I CM i C i C I CM i E I EM v EC CC v CE CC CC v CE A. I CM. CC. CC.2 I CM i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy DIODE Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime insrucion drawing) TEST CIRCUIT i GE= I C G-E shorcircuied G-E shorcircuied I E G-E shorcircuied 4 6,7 4 6,7 4 6,7 4 6,7 G-E shorcircuied 8 GE= 8 I C G-E shorcircuied 8 G-E shorcircuied 8 I E 9 9 9 9 Tr Tr2 Di Di2 CEsa characerisics es circui EC characerisics es circui Publicaion Dae : July 24 CMH-
PERFORMANCE CURES INERTER PART OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS T j=2 C (Chip) GE= (Chip) COLLECTOR CURRENT IC (A) 2 GE=2 2 8 6 4 2 9 2 4 6 8 COLLECTOR-EMITTER OLTAGE CE () COLLECTOR-EMITTER SATURATION OLTAGE CEsa (). T j= C T j=2 C 2. 2 T j=2 C.. 2 4 6 8 2 COLLECTOR CURRENT I C (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS G-E shor-circuied (Chip) EMITTER CURRENT IE (A) T j= C T j=2 C T j=2 C.. 2 2.. 4 EMITTER-COLLECTOR OLTAGE EC () Publicaion Dae : July 24 6 CMH-
PERFORMANCE CURES INERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±, R G= Ω, INDUCTIE LOAD ---------------: T j= C, - - - - -: T j=2 C HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±, I C=6 A, INDUCTIE LOAD ---------------: T j= C, - - - - -: T j=2 C d(off) d(on ) d(on ) d(off) SWITCHING TIME (ns) f SWITCHING TIME (ns) r r f COLLECTOR CURRENT I C (A). EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±, R G= Ω, INDUCTIE LOAD, PER PULSE ---------------: T j= C, - - - - -: T j=2 C HALF-BRIDGE SWITCHING CHARACTERISTICS CC=6, GE=±, I C/I E=6 A, INDUCTIE LOAD, PER PULSE ---------------: T j= C, - - - - -: T j=2 C SWITCHING ENERGY (mj) E rr E off E on REERSE RECOERY ENERGY (mj) SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E on E off E rr. COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A). EXTERNAL GATE RESISTANCE R G (Ω) Publicaion Dae : July 24 7 CMH-
PERFORMANCE CURES INERTER PART CAPACITANCE CHARACTERISTICS G-E shor-circuied, T j=2 C FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC=6, GE=±, R G= Ω, INDUCTIE LOAD ---------------: T j= C, - - - - -: T j=2 C rr C ies CAPACITANCE (nf) C oes rr (ns), I rr (A) I rr C res.. COLLECTOR-EMITTER OLTAGE CE () EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) CC=6, I C=6 A, T j=2 C Single pulse, T C=2 C R h(j- c)q=4 K/kW, R h(j- c)d=72 K/kW 2 GATE-EMITTER OLTAGE GE () 2 4 6 8 2 4 6 NORMALIZED TRANSIENT THERMAL RESISTANCE Z h(j- c)........ GATE CHARGE Q G (nc) TIME (S) Publicaion Dae : July 24 8 CMH-
PERFORMANCE CURES NTC hermisor par TEMPERATURE CHARACTERISTICS RESISTANCE R (kω). - -2 2 7 2 TEMPERATURE T ( C) Publicaion Dae : July 24 9 CMH-
Keep safey firs in your circui designs! Misubishi Elecric Corporaion pus he maximum effor ino making semiconducor producs beer and more reliable, bu here is always he possibiliy ha rouble may occur wih hem. Trouble wih semiconducors may lead o personal injury, fire or propery damage. Remember o give due consideraion o safey when making your circui designs, wih appropriae measures such as (i) placemen of subsiuive, auxiliary circuis, (ii) use of non-flammable maerial or (iii) prevenion agains any malfuncion or mishap. Noes regarding hese maerials These maerials are inended as a reference o assis our cusomers in he selecion of he Misubishi semiconducor produc bes suied o he cusomer's applicaion; hey do no convey any license under any inellecual propery righs, or any oher righs, belonging o Misubishi Elecric Corporaion or a hird pary. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, or infringemen of any hird-pary's righs, originaing in he use of any produc daa, diagrams, chars, programs, algorihms, or circui applicaion examples conained in hese maerials. All informaion conained in hese maerials, including produc daa, diagrams, chars, programs and algorihms represens informaion on producs a he ime of publicaion of hese maerials, and are subjec o change by Misubishi Elecric Corporaion wihou noice due o produc improvemens or oher reasons. I is herefore recommended ha cusomers conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for he laes produc informaion before purchasing a produc lised herein. The informaion described here may conain echnical inaccuracies or ypographical errors. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy, or oher loss rising from hese inaccuracies or errors. Please also pay aenion o informaion published by Misubishi Elecric Corporaion by various means, including he Misubishi Semiconducor home page (www.misubishielecric.com/semiconducors/). When using any or all of he informaion conained in hese maerials, including produc daa, diagrams, chars, programs, and algorihms, please be sure o evaluae all informaion as a oal sysem before making a final decision on he applicabiliy of he informaion and producs. Misubishi Elecric Corporaion assumes no responsibiliy for any damage, liabiliy or oher loss resuling from he informaion conainedherein. Misubishi Elecric Corporaion semiconducors are no designed or manufacured for use in a device or sysem ha is used under circumsances in which human life is poenially a sake. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor when considering he use of a produc conained herein for any specific purposes, such as apparaus or sysems for ransporaion, vehicular, medical, aerospace, nuclear, or undersea repeaer use. The prior wrien approval of Misubishi Elecric Corporaion is necessary o reprin or reproduce in whole or in par hese maerials. If hese producs or echnologies are subjec o he Japanese expor conrol resricions, hey mus be expored under a license from he Japanese governmen and canno be impored ino a counry oher han he approved desinaion. Any diversion or reexpor conrary o he expor conrol laws and regulaions of Japan and/or he counry of desinaion is prohibied. Please conac Misubishi Elecric Corporaion or an auhorized Misubishi Semiconducor produc disribuor for furher deails on hese maerials or he producs conained herein. 2-24 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERED. Publicaion Dae : July 24 CMH-