Collecor curren I C...... 18A Collecor-emier volage CES... 17 Maximum juncion emperaure T jmax... 175 C Fla base Type Aluminum base plae RoHS Direcive compliance Dual swich (Half-Bridge) Recognized under UL1557, File E323585 APPLICATION Wind power, Phoovolaic (Solar) power, AC Moor Conrol, Moion/Servo Conrol, Power supply, ec. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm Tolerance oherwise specified Division of Dimension Tolerance.5 o 3 ±.2 over 3 o 6 ±.3 over 6 o 3 ±.5 over 3 o 12 ±.8 over 12 o 4 ±1.2 INTERNAL CONNECTION G2 C2 (Es2) (Cs2) Tr2 Di1 Di2 Tr1 NTC TH2 E1 (Es1) (Cs1) TH1 1
MAXIMUM RATINGS (T j =25 C, unless oherwise specified) INERTER PART IGBT/DIODE Symbol Iem Condiions Raing Uni CES Collecor-emier volage G-E shor-circuied 17 GES Gae-emier volage C-E shor-circuied ± 2 I C DC, T C =5 C Collecor curren Pulse, Repeiive I CRM P o Toal power dissipaion T C =25 C I E I ERM (Noe.1) (Noe.1) Emier curren DC (Noe2) (Noe2, 4) Pulse, Repeiive (Noe2, 4) (Noe3) (Noe3) 18 36 A 11535 W MODULE Symbol Iem Condiions Raing Uni isol Isolaion volage Terminals o base plae, RMS, f=6 Hz, AC 1 min 4 T jmax Maximum juncion emperaure Insananeous even (overload) 175 T cmax Maximum case emperaure (Noe4) T jopr Operaing juncion emperaure Coninuous operaion (under swiching) -4 ~ +15 T sg Sorage emperaure - -4 ~ +125 ELECTRICAL CHARACTERISTICS (T j =25 C, unless oherwise specified) INERTER PART IGBT/DIODE Symbol Iem Condiions Limis 18 36 125 Min. Typ. Max. I CES Collecor-emier cu-off curren CE = CES, G-E shor-circuied - - 1. ma I GES Gae-emier leakage curren GE = GES, C-E shor-circuied - - 5. μa GE(h) Gae-emier hreshold volage I C =18 ma, CE = 5.4 6. 6.6 CEsa (Terminal) CEsa (Chip) Collecor-emier sauraion volage I C =18 A, GE =15, T j =25 C - 2.2 2.7 Refer o he figure of es circui T j =125 C - 2.4 - (Noe5) T j =15 C - 2.45 - I C =18 A, T j =25 C - 2. 2.6 GE =15, T j =125 C - 2.3 - (Noe5) T j =15 C - 2.35 - C ies Inpu capaciance - - 46 C oes Oupu capaciance CE =, G-E shor-circuied - - 48 C res Reverse ransfer capaciance - - 8. Q G Gae charge CC =, I C =18 A, GE =15-84 - nc d(on) Turn-on delay ime - - 1 CC =, I C =18 A, GE =±15, Rise ime - - 2 r d(off) Turn-off delay ime - - 95 R G = Ω, Inducive load Fall ime - - 5 f EC (Noe1) (Terminal) EC (Noe1) (Chip) rr (Noe1) Emier-collecor volage I E =18 A, G-E shor-circuied, T j =25 C - 2. 2.5 Refer o he figure of es circui T j =125 C - 2. - (Noe5) T j =15 C - 2.5 - I E =18 A, T j =25 C - 1.9 2.4 G-E shor-circuied, T j =125 C - 2. - (Noe5) T j =15 C - 1.95 - Reverse recovery ime CC =, I E =18 A, GE =±15, - - 35 ns Q rr (Noe1) Reverse recovery charge R G = Ω, Inducive load - 8 - μc E on Turn-on swiching energy per pulse CC =, I C =I E =18 A, - 722.8 - E off Turn-off swiching energy per pulse GE =±15, R G = Ω, - 59.5 - E (Noe1) rr Reverse recovery energy per pulse T j =15 C, Inducive load - 59.2 - mj R CC'+EE' Inernal lead resisance Main erminals -chip, per swich, (Noe4) T C =25 C -.11 - mω r g Inernal gae resisance Per swich - 1.1 - Ω A C C Uni nf ns mj 2
ELECTRICAL CHARACTERISTICS (con.; T j =25 C, unless oherwise specified) NTC THERMISTOR PART Symbol Iem Condiions R 25 Zero-power resisance T C =25 C (Noe4) R/R Deviaion of resisance R =493 Ω, T C = C B (25/5) B-consan Approximae by equaion P 25 Power dissipaion T C =25 C (Noe4) (Noe4) (Noe6) Limis Min. Typ. Max. Uni 4.85 5. 5.15 kω -7.3 - +7.8 % - 3375 - K - - mw THERMAL RESISTANCE CHARACTERISTICS Limis Symbol Iem Condiions Uni Min. Typ. Max. (Noe4) R h(j-c)q Juncion o case, per IGBT - - 13 K/kW Thermal resisance (Noe4) R h(j-c)d Juncion o case, per DIODE - - 22 K/kW Case o hea sink, per 1 module, R h(c-s) Conac hermal resisance - 3.1 - K/kW (Noe4, 7) Thermal grease applied MECHANICAL CHARACTERISTICS Symbol Iem Condiions Limis Min. Typ. Max. Uni M Main erminals M 6 screw 3.5 4. 4.5 M Mouning orque Auxiliary erminals M 4 screw 1.3 1.5 1.7 N m M s Mouning o hea sink M 5 screw 2.5 3. 3.5 N m d s Creepage disance Terminal o erminal 16 - - Terminal o base plae 25 - - mm d a Clearance Terminal o erminal 16 - - Terminal o base plae 24 - - mm m mass - - 2 - kg e c Flaness of base plae On he cenerline X, Y (Noe8) -5 - + μm Noe1. Represen raings and characerisics of he ani-parallel, emier-collecor free wheeling diode (DIODE). 2. Juncion emperaure (T j ) should no increase beyond T jmax raing. 3. Pulse widh and repeiion rae should be such ha he device juncion emperaure (T j ) dose no exceed T jmax raing. 4. Case emperaure (T C ) and hea sink emperaure (T s ) are defined on he each surface (mouning side) of base plae and hea sink jus under he chips. Refer o he figure of chip locaion. The hea sink hermal resisance should measure jus under he chips. 5. Pulse widh and repeiion rae should be such as o cause negligible emperaure rise. R 6. B ln( 25 1 1 ( 25 / 5) )/( ) R5 T25 T5 R 25 : resisance a absolue emperaure T 25 [K]; T 25 =25 [ C]+273.15=298.15 [K] R 5 : resisance a absolue emperaure T 5 [K]; T 5 =5 [ C]+273.15=323.15 [K] 7. Typical value is measured by using hermally conducive grease of λ=.9 W/(m K). 8. Base plae (mouning side) flaness measuremen poins (X, Y) are as follows of he following figure. +:Convex -:Concave ec Y Recommend area ha spreads he hermally conducive grease.(per base plae) X mouning side mouning side -: Concave mouning side +: Convex 9. Main erminal pair should be conneced ogeher in case of he curren hrough i. 3
RECOMMENDED OPERATING CONDITIONS Symbol Iem Condiions Limis Min. Typ. Max. Uni CC (DC) Supply volage Applied across - - 12 GEon Gae (-emier drive) volage Applied across -Es1/G2-Es2 13.5 15. 16.5 R G Exernal gae resisance Per swich - 2 Ω CHIP LOCATION (Top view) Dimension in mm, olerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC hermisor 4
TEST CIRCUIT GE=15 Cs1 I C Shorcircuied Cs1 Shorcircuied Cs1 I E Shorcircuied Cs1 Shorcircuied Es1 Cs2 G2 GE=15 Es1 Cs2 G2 I C Shorcircuied Es1 Cs2 G2 Shorcircuied Es1 Cs2 G2 I E Es2 Es2 Es2 Es2 Tr1 Tr2 Di1 Di2 CEsa es circui EC es circui TEST CIRCUIT AND WAEFORMS i E v GE ~ 9 % + GE - GE - GE vce R G vge Cs1 Es1 Cs2 G2 Es2 Load i C + CC A i C d(on) ~ r d(off) 9 % % f i E A I E I rr Q rr =.5 I rr rr rr.5 I rr Swiching characerisics es circui and waveforms rr, Q rr es waveform I CM i C i C I CM i E I EM v EC CC v CE CC CC v CE A.1 I CM.1 CC.1 CC.2 I CM i i i IGBT Turn-on swiching energy IGBT Turn-off swiching energy DIODE Reverse recovery energy Turn-on / Turn-off swiching energy and Reverse recovery energy es waveforms (Inegral ime i insrucion drawing) 5
PERFORMANCE CURES Inverer par OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS T j =25 C (Chip) GE =15 (Chip) 3.5 35 GE =2 13.5 T j =125 C COLLECTOR CURRENT IC (A) 3 25 2 15 15 12 11 9 COLLECTOR-EMITTER SATURATION OLTAGE CEsa () 3. 2.5 2. 1.5 1. T j =15 C T j =25 C 5.5 2 4 6 8 COLLECTOR-EMITTER OLTAGE CE (). 5 15 2 25 3 35 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS FREE WHEELING DIODE FORWARD CHARACTERISTICS T j =25 C (Chip) G-E shor-circuied (Chip) 8 COLLECTOR-EMITTER SATURATION OLTAGE CEsa () 6 4 2 I C =36 A I C =18 A I C =72 A EMITTER CURRENT IE (A) T j =15 C T j =125 C T j =25 C 6 8 12 14 16 18 2 GATE-EMITTER OLTAGE GE ()..5 1. 1.5 2. 2.5 3. EMITTER-COLLECTOR OLTAGE EC () 6
PERFORMANCE CURES Inverer par HALF-BRIDGE SWITCHING CHARACTERISTICS CC =, GE =±15, R G = Ω, INDUCTIE LOAD ---------------: T j =15 C, - - - - -: T j =125 C HALF-BRIDGE SWITCHING CHARACTERISTICS CC =, I C =18 A, GE =±15, INDUCTIE LOAD ---------------: T j =15 C, - - - - -: T j =125 C d(off) SWITCHING TIME (ns) d(on) f r SWITCHING TIME (ns) f d(on) d(off) r COLLECTOR CURRENT I C (A).1 1 EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS CC =, GE =±15, R G = Ω, INDUCTIE LOAD, PER PULSE ---------------: T j =15 C, - - - - -: T j =125 C HALF-BRIDGE SWITCHING CHARACTERISTICS CC =, I C /I E =18 A, GE =±15, INDUCTIE LOAD, PER PULSE ---------------: T j =15 C, - - - - -: T j =125 C E on SWITCHING ENERGY (mj) E off E rr REERSE RECOERY ENERGY (mj) SWITCHING ENERGY (mj) REERSE RECOERY ENERGY (mj) E on E off E rr COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A).1 1 EXTERNAL GATE RESISTANCE R G (Ω) 7
PERFORMANCE CURES Inverer par CAPACITANCE CHARACTERISTICS G-E shor-circuied, T j =25 C FREE WHEELING DIODE REERSE RECOERY CHARACTERISTICS CC =, GE =±15, R G = Ω, INDUCTIE LOAD ---------------: T j =15 C, - - - - -: T j =125 C C ies CAPACITANCE (nf) C oes C res I rr (A), rr (ns) I rr 1 rr.1.1 1 COLLECTOR-EMITTER OLTAGE CE () EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CC =, I C =18 A, T j =25 C (MAXIMUM) Single pulse, T C =25 C R h(j-c)q =13 K/kW, R h(j-c)d =22 K/kW GATE-EMITTER OLTAGE GE () 2 15 5 2 4 6 8 12 GATE CHARGE Q G (nc) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z h(j-c) 1.1.1.1.1.1 1 TIME (S) 8
PERFORMANCE CURES NTC hermisor par TEMPERATURE CHARACTERISTICS RESISTANCE R (kω) 1.1-5 -25 25 5 75 125 TEMPERATURE T ( C) 9
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